CN208791741U - A kind of vertical silicon wafer magnetron sputtering coater - Google Patents
A kind of vertical silicon wafer magnetron sputtering coater Download PDFInfo
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- CN208791741U CN208791741U CN201820706819.3U CN201820706819U CN208791741U CN 208791741 U CN208791741 U CN 208791741U CN 201820706819 U CN201820706819 U CN 201820706819U CN 208791741 U CN208791741 U CN 208791741U
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- chamber
- hanging plate
- vacuum
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Abstract
The utility model discloses a kind of vertical silicon wafer magnetron sputtering coaters, include: vacuum chamber, be arranged in vacuum chamber for hanging and moving the transmission device of silicon wafer, and the vacuum-pumping system for vacuumizing, the power control system for powering and controlling working condition；The vacuum chamber includes the purge chamber interconnected and sputtering chamber, is provided with ion-clearing electrodes in purge chamber, is provided with sputtering target in sputtering chamber；Transmission device includes being arranged in the indoor silicon wafer hanging plate of vacuum, hanging plate pedestal, railcar, silicon wafer hanging plate is detachably connected with hanging plate pedestal, rail car opens up fluted, and hanging plate base bottom is provided with protrusion, and hanging plate pedestal passes through the cooperation of protrusion and groove and the fixed grafting of railcar.Vacuum chamber volume, vacuum effectiveness good can be reduced using the design, and pick and place silicon wafer conveniently, silicon chip surface residue can be effectively removed and heated, the effect in blocks after plated film is good.
Description
Technical field
The utility model relates to field of vacuum coating, especially a kind of vertical silicon wafer magnetron sputtering coater.
Background technique
Vertical silicon wafer magnetron sputtering coater is under vacuum conditions using magnetic controlled sputtering target to plating one layer on silicon wafer
Or metal multilayer film, the silicon wafer placement plate for hanging silicon wafer utilize transmission device on vacuum indoor moving, conventional conveyor track top
Portion is plane, and silicon wafer placement plate is directly placed on track and is moved, in order to keep equilibrium orbit and silicon wafer placement plate all necessary
It is designed wider, causes the width of vacuum chamber that must also be designed wider, the volume of such vacuum chamber increases, and vacuum effectiveness is not
It is good, influence coating effects；There is also a problem be to put silicon wafer and silicon wafer is taken to need entire silicon wafer placement plate from vacuum chamber
It takes out, silicon wafer placement board size is very inconvenient when larger.
Furthermore gas residue or other spots are generally attached on silicon wafer, if soil release not will lead to plating when plated film
Film is uneven, and last plated film obtains bad at tablet quality, can use ion-clearing electrodes by gas ionization to silicon chip surface
It is cleaned, however the ion-clearing electrodes heat dissipation effect of traditional design is bad, equipment failure rate is high.
Utility model content
In order to solve the above-mentioned technical problem, the purpose of the utility model is to provide a kind of vacuum effectiveness good, coating effects are good,
At the good vertical silicon wafer magnetron sputtering coater of tablet quality.
The technical solution adopted in the utility model is:
A kind of vertical silicon wafer magnetron sputtering coater, comprising: vacuum chamber is arranged in vacuum chamber for hanging and moving silicon
The transmission device of piece, and the vacuum-pumping system being connected with vacuum chamber and the power control system for powering and controlling；
The vacuum chamber includes the purge chamber interconnected and sputtering chamber, and Ion Cleaning electricity is provided in the purge chamber
Pole is provided with sputtering target in the sputtering chamber；
The transmission device includes being arranged in the indoor silicon wafer hanging plate of vacuum, hanging plate pedestal, railcar, the silicon wafer hanging plate
It is detachably connected with hanging plate pedestal, the rail car opens up fluted, and the hanging plate base bottom is provided with protrusion, hangs
Board bottom seat passes through the cooperation of protrusion and groove and the fixed grafting of railcar.
Further, the ion-clearing electrodes include electrode contact, water cooled electrode, water supply connector, water outlet connector and divide
Water pipe, the electrode contact are connected with water cooled electrode；
The distributive pipe includes the distributive pipe in distributive pipe in the first of water cooled electrode and electrode contact, second, and
Outer distributive pipe net positioned at two sides at the top of water cooled electrode, the water supply connector pass through distributive pipe and outer distributive pipe net phase in first
Even, the water outlet connector passes through distributive pipe in second and is connected with outer distributive pipe net；
Be covered with insulation sleeve outside the electrode contact, be covered with external shield outside the insulation sleeve, the external shield with
It cleans indoor frame bottom to be connected, is provided with sealed insulation set between the water cooled electrode and the indoor bracket of cleaning.
Further, the top of the water cooled electrode is provided with inner box and outter box, the bottom edge of the outter box and clear
It washes indoor bracket to connect, is provided with insulation spacer between the inner box and outter box；
The water supply connector is inserted into electrode contact and is connected with the water inlet of distributive pipe in first, the water outlet connector insertion
Electrode contact is simultaneously connected with distributive pipe water outlet in second, the water inlet of distributive pipe water outlet and outer distributive pipe net in described first
It is connected, the water inlet of distributive pipe is connected with the water outlet of outer distributive pipe net in described second；The outer distributive pipe Netcom is excessively several
The supporting table being arranged on inner box is fixed.
Further, insulating layer, the railcar side are provided between the hanging plate pedestal and the contact surface of railcar
It is provided with driven wheel, the outer vacuum chamber wall and driven wheel corresponding position are provided with driving wheel, and the driving wheel passes through with driven wheel
Rotation axis is connected, for driving railcar to move.
Further, the groove includes that first groove in rail car middle position is arranged in and is arranged in railcar
Several second grooves of top two sides, the protrusion include that setting is corresponding with the first groove first convex in hanging plate base bottom
Portion, several second protrusions corresponding with several second grooves out, first protrusion and the first groove cooperate grafting, described
Several second protrusions and several second grooves cooperate grafting.
Further, the sputtering chamber includes that the chromium sputtering chamber being arranged successively, golden sputtering chamber and sputtered aluminum room, the chromium splash
Room is penetrated to be connected with purge chamber.
Further, plane chromium target is provided in the chromium sputtering chamber, the gold sputtering chamber is provided with a flat gold target, institute
It states sputtered aluminum room and is provided with cylindrical aluminium target.
Further, the purge chamber, chromium sputtering chamber, golden sputtering chamber, all there are two anti-for setting above sputtered aluminum chamber interior
Incline wheel, and the top of the silicon wafer hanging plate is located between two anti-tip wheels, for preventing silicon wafer hanging plate from tilting.
Further, the vacuum-pumping system includes several peripheral pumps, molecular pump, vacuum lock and valve, the vortex
Pump and molecular pump are connected to be used to extract vacuum respectively with purge chamber, sputtering chamber by valve, and the vacuum lock setting is being cleaned
The both ends of room.
Wherein, the power control system includes PLC control cabinet and power cabinet, and the power cabinet is for powering, the PLC
Control cabinet is used to control the working condition of ion-clearing electrodes, vacuum-pumping system, sputtering target, transmission device.
The utility model has the beneficial effects that
Traditional monolith silicon wafer placement plate is divided into silicon wafer hanging plate and hanging plate pedestal by the utility model, and hanging plate pedestal passes through convex
Portion is connected with reeded railcar is arranged out, can be substantially reduced silicon wafer hanging plate, hanging plate using the connection type of this structure
The width of pedestal and small rail car and mobile balance is not influenced, and then the volume of entire vacuum chamber can greatly reduce,
Vacuum effectiveness good improves coating quality；Furthermore silicon wafer hanging plate and hanging plate pedestal are designed to removably, put silicon wafer and taken
The silicon wafer hanging plate for being hung with silicon wafer on hanging plate pedestal need to only be removed and be loaded on when silicon wafer, it is more convenient, furthermore sputtering
Purge chamber is provided with before room, under vacuum conditions by ion-clearing electrodes by the residue on gas ionization cleaning silicon chip surface,
Distributive pipe is provided on ion-clearing electrodes for radiating, failure rate is low.
Detailed description of the invention
Specific embodiment of the present utility model is described further with reference to the accompanying drawing；
Fig. 1 is the side view of the vertical silicon wafer magnetron sputtering coater of the utility model；
Fig. 2 is the oblique view of the vertical silicon wafer magnetron sputtering coater of the utility model；
Fig. 3 is the top view of the utility model vacuum chamber；
Fig. 4 is the schematic diagram of the utility model ion-clearing electrodes；
Fig. 5 is the side sectional view of the utility model transmission device；
Fig. 6 is the enlarged diagram of transmission device identification division in Fig. 5.
Specific embodiment
It is as shown in figs 1 to 6 a kind of vertical silicon wafer magnetron sputtering coater of the utility model, comprising: vacuum chamber is set
Set the transmission device 1 for being used to hang and move silicon wafer in vacuum chamber and vacuum-pumping system and power control system；
As shown in Fig. 5-Fig. 6, transmission device 1 includes being arranged in the indoor silicon wafer hanging plate 13 of vacuum, hanging plate pedestal 14, track
Vehicle 15, silicon wafer hanging plate 13 are detachably connected with hanging plate pedestal 14；Open up fluted at the top of railcar 15,14 bottom of hanging plate pedestal is set
It is equipped with protrusion, hanging plate pedestal 14 passes through the cooperation of protrusion and groove and the fixed grafting of railcar 15.
Wherein, groove includes that the first groove 151 of 15 top center position of railcar is arranged in and is arranged in railcar 15
Several second grooves 152 of top two sides, protrusion include setting in 14 bottom of hanging plate pedestal corresponding with the first groove 151 the
One protrusion 141, several second protrusions 142 corresponding with several second grooves 152, the first protrusion 141 and the first groove
151 cooperation grafting, several second protrusions 142 cooperate grafting with several second grooves 152.
In order to reinforce insulating properties, insulating layer is provided between hanging plate pedestal 14 and the contact surface of railcar 15, it is preferred that absolutely
Edge layer is polytetrafluorethylecoatings coatings, naturally it is also possible to use other insulating materials, polytetrafluorethylecoatings coatings can be coated in hanging plate bottom
On seat 14 or the contact surface of 15 either side of railcar, polytetrafluoroethylene (PTFE) can also be coated with two sides.In order to further strengthen absolutely
Edge is all provided with cushion rubber in several second grooves 152.
Wherein, 15 side of railcar is provided with driven wheel 161, and outer vacuum chamber wall and 161 corresponding position of driven wheel are provided with drive
Driving wheel 162, driving wheel 162 are connected with driven wheel 161 by rotation axis 163, with for driving railcar 15 to move, this is practical new
Type for driving wheel 162 driving method without limitation, driving wheel 162 can directly be connected with motor rotation axis, can also lead to
Its rotation of chain-driving is crossed, is to drive its rotation by the way of chain in the present embodiment.
In order to further strengthen the stability in 13 moving process of silicon wafer hanging plate, above the internal vacuum chamber there are two settings
Anti-tip wheel 17, the top of silicon wafer hanging plate 13 are clipped between two anti-tip wheels 17, and fixed silicon wafer hanging plate is provided on hanging plate pedestal 14
The both ends of silicon wafer hanging plate 13 Yu 14 junction of hanging plate pedestal are arranged in 13 baffle 19, baffle 19, and baffle 19 is adjusted by bolt
With fixed position, avoids silicon wafer hanging plate 13 from tilting or be displaced in moving process and cause coating effects bad.In hanging plate pedestal 14
On be additionally provided with position sensor 18, for PLC control cabinet transmission of location information.
Traditional monolith silicon wafer placement plate is divided into silicon wafer hanging plate 13 and hanging plate pedestal by the transmission device in the utility model
14, hanging plate pedestal 14 is connected by protrusion with the reeded railcar 15 of setting, uses the connection type of this structure can be with
It is substantially reduced silicon wafer hanging plate 13, the width of hanging plate pedestal 14 and small rail car and does not influence mobile balance, and then is entire
The volume of vacuum chamber can greatly reduce, and vacuum effectiveness good improves coating quality；Furthermore by silicon wafer hanging plate 13 and hanging plate pedestal
14 are designed to removably, put silicon wafer and take the silicon wafer hanging plate 13 that need to will be only hung with silicon wafer when silicon wafer on hanging plate pedestal 14
It removes and is loaded on, it is more convenient.
Hanging plate pedestal 14 and railcar contact surface are provided with insulating layer polytetrafluoroethylene (PTFE), by the second groove 152
Cushion rubber further enhances insulating properties, because the edge effect of the bad generation of insulation effect, makes plated film when effectively preventing plated film
Effect more evenly, improves into tablet quality.
As Figure 1-Figure 2, the vacuum chamber includes the purge chamber 2 interconnected and sputtering chamber 3, further includes and sputtering chamber
Connected transfer chamber 4 is provided with ion-clearing electrodes in purge chamber 2, is provided in ion-clearing electrodes and divides water for heat dissipation
It manages, is provided with sputtering target in sputtering chamber.
Wherein, sputtering chamber 3 includes the chromium sputtering chamber 31 being arranged successively, golden sputtering chamber 32 and sputtered aluminum room 33, chromium sputtering chamber
31 are connected with purge chamber 2, and sputtered aluminum room 33 is connected with transfer chamber 4, and transfer chamber 4 is also connected with fluctuating plate platform area 6.Chromium sputtering chamber 31
It is inside provided with plane chromium target 311, golden sputtering chamber 32 is provided with a flat gold target 321, and sputtered aluminum room 33 is provided with cylindrical aluminium target
331。
As shown in Figure 1, Figure 3, vacuum-pumping system includes two 52, two sets of molecular pump vacuum locks of peripheral pump 51, four
53, peripheral pump 51 and molecular pump 52 are connected respectively with for extracting vacuum, two sets of vacuum locks 53 divide with purge chamber 2, sputtering chamber 3
The both ends of purge chamber 2 are not set.
Wherein, in order to reach optimum vacuum effect, purge chamber 2 configures a peripheral pump and a molecular pump, sputtering chamber 3 are matched
Set a peripheral pump and three molecular pumps.
As shown in figure 4, ion-clearing electrodes include electrode contact 21, water cooled electrode 22, electrode contact 21 and water cooled electrode
22 are connected；Distributive pipe includes water supply connector 231, water outlet connector 232, and through the first of water cooled electrode 22 and electrode contact 21
Distributive pipe 242 in interior distributive pipe 241, second, and the outer distributive pipe net 243 positioned at 22 top two sides of water cooled electrode, water inlet connects
First 231 are connected by distributive pipe 241 in first with outer distributive pipe net 243, water outlet connector 232 pass through in second distributive pipe 242 and
Outer distributive pipe net 243 is connected；
Wherein, water supply connector 231 be inserted into 21 bottom of water cooled electrode and with distributive pipe 241 in first in electrode contact 21
Water inlet is connected, and water outlet connector 232 is inserted into from 21 side of electrode contact and goes out with distributive pipe 242 in second in electrode contact 21
The mouth of a river is connected, and the insertion position of water outlet connector 232 and water supply connector 231 is not belonging to the protection scope of the utility model, Ke Yigen
It is exchanged according to needs or other is adjusted；241 water outlet of distributive pipe is connected with the water inlet of outer distributive pipe net 243 in first, and second
The water inlet of interior distributive pipe 242 is connected with the water outlet of outer distributive pipe net 243；In order to reinforce heat dissipation effect, outer distributive pipe net 243
Length should be greater than in electrode first in distributive pipe 241, second distributive pipe 242 length, furthermore outer distributive pipe net 243 is logical
It is fixed to cross several supporting tables 264 being arranged on inner box 261, avoids causing deformation to influence interface because pipeline is too long
Leakproofness.
In order to realize the effect of insulated enclosure, it is covered with insulation sleeve 251 outside electrode contact 21, is covered with outside insulation sleeve 251
External shield 252, external shield 252 pass through fixed device and are connected with 27 bottom of bracket of purge chamber, water cooled electrode 22 and cleaning
Sealed insulation set 253 is provided between the bracket 27 of room.The top of water cooled electrode 22 is provided with inner box 261 and outter box
262, the bottom edge of outter box 262 connects with the bracket 27 of purge chamber, be provided between inner box 261 and outter box 262 insulation every
From piece 263.External shield 252 passes through the pressure flange 281 worked in coordination and screw is fixed on the bracket 27 of purge chamber.
Wherein, it in order to further strengthen insulating properties and leakproofness, is provided between insulation sleeve 51 and sealed insulation set 253
Dead ring 254,254 inner wall of dead ring connect with water cooled electrode 22, and 254 outer wall of dead ring connects with external shield 252.Sealing
The side of insulation sleeve 53 connects with 27 side of bracket of purge chamber.Between electrode contact 21 and the contact surface of water cooled electrode 22, water
Between cold electrode 22 and the contact surface of sealed insulation set 253, between the contact surface for the bracket 27 that sealed insulation covers 253 and purge chamber
All it is provided with O-ring seal 282.
It wherein, further include radio-frequency power supply, the one end of electrode contact 21 far from water cooled electrode 22 passes through screw and lug plate 283
Fixed, lug plate 283 extends outside external shield 252 and is electrically connected with radio-frequency power supply.
Power control system includes PLC control cabinet 61 and power cabinet 62, and power cabinet 62 for powering, use by PLC control cabinet 61
In the working condition of control ion-clearing electrodes, vacuum-pumping system, sputtering target, transmission device, radio-frequency power supply and PLC control cabinet
61 are connected, and with the working condition for controlling radio-frequency power supply, realize constant current, the constant pressure, invariable power of radio-frequency power supply.
Using the ion-clearing electrodes of the design, distributive pipe in first is provided in water cooled electrode 22 and electrode contact 21
Distributive pipe 242 in 241 and second, is provided with exposed outer distributive pipe net 243 outside water cooled electrode 22, and cooling water is from water supply connector
231, which flow into distributive pipe 241 in first, takes away the heat of 22/ electrode contact 21 of water cooled electrode, then flows into outer distributive pipe net 243
It distributes heat in purge chamber, improves and clean indoor temperature, on the one hand utilize the raising of environment temperature, on the other hand utilize
After the kinetic energy that ion is hit is heated to silicon wafer, improves cleaning efficiency, while cooling water is by exposed outer distributive pipe net 243 heat dissipation
Temperature reduces, and back flows back into second distributive pipe 242 and takes away the heat of 22/ electrode contact 21 of water cooled electrode and from water outlet connector
232 outflows, have carried out double-radiation function, good heat dissipation effect using the cooling water of equivalent.
The design not only increases the temperature of purge chamber, will heat to silicon wafer and cleaning is combined into one, cleaning effect is good, together
Shi Liyong cooling water has carried out double-radiation function, compare the design of single cooling water pipe not waste water resource while heat dissipation effect more
It is good.
Furthermore pass through the insulation sleeve 251 being arranged in outside electrode contact 21, the external shield 252, Yi Jishui outside insulation sleeve 251
The combination of sealed insulation set 253 between bracket 27 in cold electrode 22 and vertical silicon wafer magnetron sputtering coater, insulation effect
Good, leakproofness is good, further improves cleaning effect.
The working process of the utility model is as follows:
Silicon wafer is suspended on silicon wafer hanging plate 13 by user in antivacuum fluctuating plate platform area 6, then inserts silicon wafer hanging plate 13
Enter in the groove of hanging plate pedestal 14 fixed, silicon wafer hanging plate 13 and scraper base initially enter purge chamber 2 with railcar 15, are cleaning
Room 2 is washed the residue of silicon chip surface while being heated by the particle that ion-clearing electrodes ionize, and then sequentially enters chromium and splashes
Room 31, golden sputtering chamber 32, the progress of sputtered aluminum room 33 plated film are penetrated, transfer chamber 4 is subsequently entered and carries out after cooling down, transmission device 1 is reverse
Operation is finally left vacuum chamber and is returned to successively by sputtered aluminum room 33, golden sputtering chamber 32, chromium sputtering chamber 31 and purge chamber 2
Bottom sheet platform area 6, staff remove the silicon wafer after plated film, repeat above step.
The above is only the preferred embodiments of the utility model, the utility model is not limited to the above embodiment, only
To realize that the utility model aim technical solution belongs within the protection scope of the utility model with essentially identical means.
Claims (10)
1. a kind of vertical silicon wafer magnetron sputtering coater characterized by comprising vacuum chamber is arranged in vacuum chamber for hanging
The transmission device (1) of extension and mobile silicon wafer, and the vacuum-pumping system being connected with vacuum chamber and the electricity for powering and controlling
Source control system；
The vacuum chamber includes the purge chamber (2) interconnected and sputtering chamber (3), and it is clear to be provided with ion in the purge chamber (2)
Electrode is washed, the distributive pipe for heat dissipation is provided in the ion-clearing electrodes, is provided with sputtering target in the sputtering chamber (3)；
The transmission device (1) includes being arranged in the indoor silicon wafer hanging plate (13) of vacuum, hanging plate pedestal (14), railcar (15),
The silicon wafer hanging plate (13) is detachably connected with hanging plate pedestal (14)；Fluted, the extension is opened up at the top of the railcar (15)
Board bottom seat (14) bottom is provided with protrusion, and hanging plate pedestal (14) is fixed by the cooperation of protrusion and groove and railcar (15)
Grafting.
2. vertical silicon wafer magnetron sputtering coater according to claim 1, it is characterised in that: the ion-clearing electrodes packet
Electrode contact (21), water cooled electrode (22) are included, the electrode contact (21) is connected with water cooled electrode (22)；
The distributive pipe includes water supply connector (231), water outlet connector (232), and runs through water cooled electrode (22) and electrode contact
(21) distributive pipe (241) in first, distributive pipe (242) in second, and it is located at outer point of two sides at the top of water cooled electrode (22)
Pipe network (243), the water supply connector (231) passes through distributive pipe (241) in first and is connected with outer distributive pipe net (243), described
Water outlet connector (232) passes through distributive pipe (242) in second and is connected with outer distributive pipe net (243)；
It is covered with insulation sleeve (251) outside the electrode contact (21), is covered with external shield (252) outside the insulation sleeve (251),
The external shield (252) is connected with indoor bracket (27) bottom is cleaned, the water cooled electrode (22) and the indoor branch of cleaning
Sealed insulation set (253) are provided between frame (27).
3. vertical silicon wafer magnetron sputtering coater according to claim 2, it is characterised in that: the water cooled electrode (22)
Top is provided with inner box (261) and outter box (262), the bottom edge of the outter box (262) and the indoor bracket (27) of cleaning
Connect, is provided with insulation spacer (263) between the inner box (261) and outter box (262)；
The water supply connector (231) insertion electrode contact (21) is simultaneously connected with the water inlet of distributive pipe in first (241), it is described out
Water swivel (232) insertion electrode contact (21) is simultaneously connected with distributive pipe in second (242) water outlet, distributive pipe in described first
(241) water outlet is connected with the water inlet of outer distributive pipe net (243), and the water inlet of distributive pipe (242) divides with outer in described second
The water outlet of pipe network (243) is connected；The outer distributive pipe net (243) passes through several supports being arranged on inner box (261)
Platform (264) is fixed.
4. vertical silicon wafer magnetron sputtering coater according to claim 1, it is characterised in that: the hanging plate pedestal (14) and
Insulating layer is provided between the contact surface of railcar (15), railcar (15) side is provided with driven wheel (161), described true
Empty room outer wall and driven wheel (161) corresponding position are provided with driving wheel (162), and the driving wheel (162) passes through with driven wheel (161)
Rotation axis (163) is connected, for driving railcar (15) to move.
5. vertical silicon wafer magnetron sputtering coater according to claim 1, it is characterised in that: the groove includes that setting exists
Several second grooves of first groove (151) and the setting two sides at the top of railcar (15) of railcar (15) top center position
(152), the protrusion includes being arranged in hanging plate pedestal (14) bottom the first protrusion corresponding with the first groove (151)
(141), several second protrusions (142) corresponding with several second groove (152), first protrusion (141) and first
Groove (151) cooperates grafting, and several second protrusions (142) and several second grooves (152) cooperate grafting.
6. vertical silicon wafer magnetron sputtering coater according to claim 1, it is characterised in that: the sputtering chamber (3) includes
The chromium sputtering chamber (31) that is arranged successively, golden sputtering chamber (32) and sputtered aluminum room (33), the chromium sputtering chamber (31) and purge chamber (2)
It is connected.
7. vertical silicon wafer magnetron sputtering coater according to claim 6, it is characterised in that: in the chromium sputtering chamber (31)
It is provided with plane chromium target (311), the gold sputtering chamber (32) is provided with a flat gold target (321), and the sputtered aluminum room (33) sets
It is equipped with cylindrical aluminium target (331).
8. vertical silicon wafer magnetron sputtering coater according to claim 6, it is characterised in that: the purge chamber (2), chromium splash
Penetrate room (31), there are two golden sputtering chamber (32), sputtered aluminum room (33) inner upper all be arrangeds anti-tip wheel (17), the silicon wafer hanging plate
(13) top is located between two anti-tip wheels (17), for preventing silicon wafer hanging plate (13) from tilting.
9. vertical silicon wafer magnetron sputtering coater according to claim 1, it is characterised in that: the vacuum-pumping system packet
Include several peripheral pumps (51), molecular pump (52), vacuum lock (53), the peripheral pump (51) and molecular pump (52) respectively with purge chamber
(2), sputtering chamber (3) is connected so that for extracting vacuum, the both ends of purge chamber are arranged in the vacuum lock (53).
10. vertical silicon wafer magnetron sputtering coater according to claim 1, it is characterised in that: the power control system
Including PLC control cabinet (61) and power cabinet (62), the power cabinet (62) is for powering, and the PLC control cabinet (61) is for controlling
The working condition of ion-clearing electrodes processed, vacuum-pumping system, sputtering target, transmission device (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820706819.3U CN208791741U (en) | 2018-05-11 | 2018-05-11 | A kind of vertical silicon wafer magnetron sputtering coater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820706819.3U CN208791741U (en) | 2018-05-11 | 2018-05-11 | A kind of vertical silicon wafer magnetron sputtering coater |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208791741U true CN208791741U (en) | 2019-04-26 |
Family
ID=66200005
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820706819.3U Expired - Fee Related CN208791741U (en) | 2018-05-11 | 2018-05-11 | A kind of vertical silicon wafer magnetron sputtering coater |
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| Country | Link |
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| CN (1) | CN208791741U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108411270A (en) * | 2018-05-11 | 2018-08-17 | 湖南菲尔姆真空设备有限公司 | A kind of vertical silicon chip magnetron sputtering coater |
-
2018
- 2018-05-11 CN CN201820706819.3U patent/CN208791741U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108411270A (en) * | 2018-05-11 | 2018-08-17 | 湖南菲尔姆真空设备有限公司 | A kind of vertical silicon chip magnetron sputtering coater |
| CN108411270B (en) * | 2018-05-11 | 2023-03-07 | 湖南众源科技有限公司 | Vertical silicon wafer magnetron sputtering coating machine |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190426 Termination date: 20210511 |
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| CF01 | Termination of patent right due to non-payment of annual fee |