CN208768315U - A kind of lateral arrangement High-Power Microwave single mode processor - Google Patents

A kind of lateral arrangement High-Power Microwave single mode processor Download PDF

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Publication number
CN208768315U
CN208768315U CN201821127921.4U CN201821127921U CN208768315U CN 208768315 U CN208768315 U CN 208768315U CN 201821127921 U CN201821127921 U CN 201821127921U CN 208768315 U CN208768315 U CN 208768315U
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microwave
excitation cavity
waveguide
microwave excitation
single mode
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CN201821127921.4U
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邓贱牛
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Shenzhen Hongwei Microwave Technology Co., Ltd.
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Shenzhen Xingju Industrial Automation Co Ltd
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Abstract

The utility model discloses a kind of lateral arrangement High-Power Microwave single mode processors, including microwave excitation cavity, wherein, the microwave excitation cavity is rectangular waveguide, it is made of determining broadside and narrow side, the microwave excitation is intracavitary to be provided with load pipe along the broadside, one side bottom of microwave excitation cavity is provided with adjustment pin, the microwave excitation top of chamber is arranged with connecting flange, it is connected with microwave source, the load pipe both ends are respectively arranged with charging interface and discharging interface, and, the charging interface and the discharging interface are located in the narrow side of the microwave excitation cavity, the microwave excitation cavity and the load pipe junction are provided with the cut-off waveguide to match with the load pipe.The utility model has the following beneficial effects: the utility model provides a kind of lateral arrangement High-Power Microwave single mode processor, structure is more reasonable, increases power density, reinforces physical reaction, shortens the reaction time, reduces power consumption.

Description

A kind of lateral arrangement High-Power Microwave single mode processor
Technical field
The utility model relates to microwave technical fields, it particularly relates at a kind of lateral arrangement High-Power Microwave single mode Manage device.
Background technique
Microwave energy is known as " second flame of the mankind ", and microwave treatment technology is just to be extensively studied and applying, especially It is to be increasingly being attention in fields such as sewage treatment, chemical synthesis, extractions.The selective heating of microwave, In treatment process, microwave can speed up the separation of fluid intermediate ion, accelerate the generation of chemical reaction, on the one hand can accelerate processing speed Degree, it is on the other hand energy saving.Existing processing unit is using large-diameter circular microwave excitation cavity, therefore microwave excitation mostly Chamber cavity volume is big, and power density is low, reduces physical reaction, extends the reaction time, reduces reaction effect;Microwave is to being located The penetration depth for managing object is different, causes treated object unevenly and insufficient to microwave energy absorption, reduces treatment effect, increases Power consumption increases processing equipment debugging difficulty.
For the problems in the relevant technologies, currently no effective solution has been proposed.
Utility model content
For the problems in the relevant technologies, the utility model proposes a kind of lateral arrangement High-Power Microwave single mode processor, To overcome above-mentioned technical problem present in existing the relevant technologies.
The technical solution of the utility model is achieved in that
A kind of lateral arrangement High-Power Microwave single mode processor, including microwave excitation cavity, wherein the microwave excitation cavity is Rectangular waveguide is made of determining broadside and narrow side, and the microwave excitation is intracavitary to be provided with load pipe along the broadside, institute It states one side bottom of microwave excitation cavity and is provided with adjustment pin, the microwave excitation top of chamber is arranged with connecting flange, with microwave source It is connected, the load pipe both ends are respectively arranged with charging interface and discharging interface, also, the charging interface and the discharging Interface is located in the narrow side of the microwave excitation cavity, and the microwave excitation cavity and the load pipe junction are provided with and bear with described Carry the cut-off waveguide that pipe matches.
Further, for BJ26 standard waveguide when the microwave excitation cavity uses 2.45GHz microwave source, the size of broadside is 86.36mm, the size of narrow side are 43.18mm.
Further, for BJ9 standard waveguide when the microwave excitation cavity uses 915MHz microwave source, the size of broadside is 247.65mm narrow side is having a size of 123.82mm.
Further, the load pipe (2) is the N-shaped fallen, is made of electromagnetic wave transparent material.
Further, the load pipe passes through microwave excitation cavity from microwave excitation cavity narrow side, conveys material in load pipe Direction is vertical with the intracavitary microwave transmission direction of microwave excitation.
Further, the cut-off waveguide is located at load pipe at narrow side, integrally welded with microwave excitation cavity.
Further, the cut-off waveguide is circular configuration, also, the cut-off waveguide internal diameter is narrow less than microwave excitation cavity Side size, the cut-off waveguide length are greater than 1.5 times of the cut-off waveguide internal diameter.
Further, described its function of adjustment pin is to enter the intracavitary depth of microwave excitation by adjusting pin, adjustment The intracavitary microwave reflection wave phase of microwave excitation, after being superimposed incidence wave with back wave, load pipe is in microwave excitation cavity internal electric field Most strength or magnetic field most strength.
Further, the connecting flange makes microwave excitation cavity be connected with microwave source, and microwave source is by microwave from connecting flange Mouth feed-in microwave excitation cavity.
The utility model has the following beneficial effects: being standard waveguide by setting microwave excitation cavity, to guarantee to swash in microwave Intracavitary only a kind of microwave mode, i.e. single mode are encouraged, so that microwave excitation is intracavitary to obtain high microwave density;It is negative by being arranged It carries pipe and passes through microwave excitation cavity from microwave excitation cavity narrow side, pass material conveying direction and the intracavitary microwave of microwave excitation in load pipe Defeated direction is vertical;In microwave excitation cavity narrow side aperture, load pipe is passed through, cut-off waveguide is welded in tapping, to tapping microwave Inhibited, prevents microwave leakage;The intracavitary microwave reflection wave phase of microwave excitation is adjusted by using adjustment pin, makes incidence wave After being superimposed with back wave, load pipe is in microwave excitation cavity internal electric field most strength or magnetic field most strength;Made by connecting flange micro- Wave excitation chamber is connected with microwave source, and microwave source is by microwave from connecting flange mouth feed-in microwave excitation cavity;Material from charging interface into Enter the intracavitary load pipe of microwave excitation, from discharge interface be discharged the intracavitary load pipe of microwave excitation, charging interface and discharging interface by Cut-off waveguide shield microwaves, prevent microwave leakage;The utility model provides a kind of lateral arrangement High-Power Microwave single mode processor, Its structure is more reasonable, increases power density, reinforces physical reaction, shortens the reaction time, reduces power consumption.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only the utility model Some embodiments for those of ordinary skill in the art without creative efforts, can also be according to this A little attached drawings obtain other attached drawings.
Fig. 1 is the structural representation according to a kind of lateral arrangement High-Power Microwave single mode processor of the utility model embodiment Figure;
Fig. 2 is the side view according to a kind of lateral arrangement High-Power Microwave single mode processor of the utility model embodiment.
In figure:
1, microwave excitation cavity;2, load pipe;3, pin is adjusted;4, connecting flange;5, interface is fed;6, discharge interface;7, Microwave excitation cavity broadside;8, the narrow frame of microwave excitation cavity;9, cut-off waveguide.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art's every other embodiment obtained, all belongs to In the range of the utility model protection.
Embodiment according to the present utility model provides a kind of lateral arrangement High-Power Microwave single mode processor.
As shown in Figs. 1-2, according to the lateral arrangement High-Power Microwave single mode processor of the utility model embodiment, including it is micro- Wave excitation chamber 1, wherein the microwave excitation cavity 1 is rectangular waveguide, is made of determining broadside 7 and narrow side 8, and the microwave swashs It encourages in chamber 1 and 7 direction of broadside is provided with load pipe 2,1 one side bottom of microwave excitation cavity is provided with adjustment pin 3, described micro- It is arranged with connecting flange 4 at the top of wave excitation chamber 1, is connected with microwave source, 2 both ends of load pipe are respectively arranged with charging interface 5 are located in 1 narrow side 8 of microwave excitation cavity with discharging interface 6, the charging interface 5 and the discharging interface 6, described Microwave excitation cavity 1 and 2 junction of load pipe are provided with the cut-off waveguide 9 to match with the load pipe 2.
In one embodiment, for BJ26 standard waveguide when the microwave excitation cavity 1 uses 2.45GHz microwave source, broadside Having a size of 86.36mm, the size of narrow side is 43.18mm.
In one embodiment, for BJ9 standard waveguide when the microwave excitation cavity 1 uses 915MHz microwave source, the ruler of broadside Very little is 247.65mm, and narrow side is having a size of 123.82mm.
In one embodiment, the load pipe 2 be fall N-shaped, for electromagnetic wave transparent material manufacture at.
In one embodiment, the load pipe 2 passes through microwave excitation cavity 1 from 1 narrow side 8 of microwave excitation cavity, makes in load pipe 2 Material conveying direction is vertical with microwave transmission direction in microwave excitation cavity 1.
In one embodiment, the cut-off waveguide 9 is located at load pipe 2 at narrow side 8, welds with microwave excitation cavity 1 Integrally.
In one embodiment, the cut-off waveguide 9 is circular configuration, also, 9 internal diameter of the cut-off waveguide is less than narrow side 8 Size, 9 length of cut-off waveguide are greater than 1.5 times that the cut-off wave 9 leads internal diameter.
In one embodiment, described adjustment its function of pin 3 is the depth entered in microwave excitation cavity 1 by adjusting pin 3 Degree adjusts microwave reflection wave phase in microwave excitation cavity 1, and after being superimposed incidence wave with back wave, load pipe 2 is in microwave excitation 1 internal electric field of chamber most strength or magnetic field most strength.
In one embodiment, the connecting flange 4 makes microwave excitation cavity 1 be connected with microwave source, and microwave source connects microwave certainly 4 mouthfuls of feed-in microwave excitation cavities 1 of acting flange.
When concrete application, microwave excitation cavity 1 is standard waveguide;Using 2450MHz microwave source, microwave excitation cavity 1 is BJ26 When standard waveguide, 1 broadside 7 of microwave excitation cavity is having a size of 86.36mm, and 1 narrow side 8 of microwave excitation cavity is having a size of 43.18mm;Using 915MHz microwave source, laser/microwave excitation cavity 1 are BJ9 standard waveguide, and 1 broadside 7 of microwave excitation cavity is having a size of 247.65mm, microwave 1 narrow side 8 of excitation cavity is having a size of 123.822mm.Using the above standard waveguide as microwave excitation cavity 1, guarantee in microwave excitation cavity There was only a kind of microwave mode, i.e. single mode in 1, so that obtaining high microwave density in microwave excitation cavity 1.
Load pipe 2 is electromagnetic wave transparent material, selects different wave transparents according to lateral arrangement High-Power Microwave single mode processor purposes Material, including polytetrafluoroethylene (PTFE), quartz glass, pp material etc..Load pipe 2 passes through microwave excitation cavity from 1 narrow side 8 of microwave excitation cavity 1, keep material conveying direction in load pipe 2 vertical with microwave transmission direction in microwave excitation cavity 1, load pipe 2 and microwave excitation cavity 1 In lateral arrangement.In 1 narrow side of microwave excitation cavity, 8 aperture, load pipe 2 is passed through, cut-off waveguide 9 is welded in tapping, to tapping Microwave is inhibited, and microwave leakage is prevented;Using round cut-off waveguide 9, internal diameter is less than narrow 8 size in 1 side of microwave excitation cavity, cuts Only 9 length of waveguide is greater than 1.5 times of 9 internal diameter of cut-off waveguide.
Microwave reflection wave phase in microwave excitation cavity 1 is adjusted using adjustment pin 3, after being superimposed incidence wave with back wave, Load pipe 2 is in 1 internal electric field of microwave excitation cavity most strength or magnetic field most strength.Connecting flange 4 makes microwave excitation cavity 1 and microwave Source is connected, and microwave source is by microwave from 4 mouthfuls of feed-in microwave excitation cavities 1 of connecting flange.Material enters microwave excitation from charging interface 5 Load pipe 2 in chamber 1, from discharge interface 6 be discharged microwave excitation cavity 1 in load pipe 2, charging interface 5 with discharge interface 6 at by ending 9 shield microwaves of waveguide, prevent microwave leakage.
In conclusion being standard wave by setting microwave excitation cavity 1 by means of the above-mentioned technical proposal of the utility model It leads, to guarantee there was only a kind of microwave mode, i.e. single mode in microwave excitation cavity 1, so that obtaining in microwave excitation cavity 1 high Microwave density;Microwave excitation cavity 1 is passed through from 1 narrow side 8 of microwave excitation cavity by setting load pipe 2, makes material in load pipe 2 Conveying direction is vertical with microwave transmission direction in microwave excitation cavity 1;In 1 narrow side of microwave excitation cavity, 8 aperture, load pipe 2 is passed through, Tapping welds cut-off waveguide 9, inhibits to tapping microwave, prevents microwave leakage;It is adjusted by using adjustment pin 3 micro- Microwave reflection wave phase in wave excitation chamber 1, after being superimposed incidence wave with back wave, load pipe 2 is in 1 internal electric field of microwave excitation cavity Most strength or magnetic field most strength;Microwave excitation cavity 1 is set to be connected with microwave source by connecting flange 4, microwave source connects microwave certainly 4 mouthfuls of feed-in microwave excitation cavities 1 of flange;Material enters load pipe 2 in microwave excitation cavity 1 from charging interface 5, from 6 row of interface that discharges By 9 shield microwaves of cut-off waveguide at load pipe 2 in microwave excitation cavity 1 out, charging interface 5 and discharging interface 6, prevent microwave from letting out Leakage;The utility model provides a kind of lateral arrangement High-Power Microwave single mode processor, and structure is more reasonable, and it is close to increase power Degree reinforces physical reaction, shortens the reaction time, reduces power consumption.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this Within the spirit and principle of utility model, any modification, equivalent replacement, improvement and so on should be included in the utility model Protection scope within.

Claims (10)

1. a kind of lateral arrangement High-Power Microwave single mode processor, which is characterized in that including microwave excitation cavity (1), wherein described Microwave excitation cavity (1) is rectangular waveguide, is made of determining broadside (7) and narrow side (8), along width in the microwave excitation cavity (1) Side (7) direction is provided with load pipe (2), and (1) one side bottom of microwave excitation cavity is provided with adjustment pin (3), the microwave Connecting flange (4) are equipped at the top of excitation cavity (1), are connected with microwave source, load pipe (2) both ends are respectively arranged with charging and connect Mouth (5) and discharging interface (6), the charging interface (5) and the discharging interface (6) are located at the microwave excitation cavity (1) narrow side (8) on, the microwave excitation cavity (1) and the load pipe (2) junction are provided with the cut-off to match with the load pipe (2) Waveguide (9).
2. a kind of lateral arrangement High-Power Microwave single mode processor according to claim 1, which is characterized in that the microwave Excitation cavity (1) is standard waveguide, guarantees the microwave that one mode is only existed in microwave excitation cavity (1).
3. a kind of lateral arrangement High-Power Microwave single mode processor according to claim 2, which is characterized in that the standard Waveguide is rectangular waveguide, is BJ26 waveguide using 2.45GHz microwave source, the size of broadside (7) is 86.36mm, narrow side (8) Having a size of 43.18mm.
4. a kind of lateral arrangement High-Power Microwave single mode processor according to claim 2, which is characterized in that the standard Waveguide is rectangular waveguide, is BJ9 waveguide using 915MHz microwave source, the size of broadside (7) is 247.65mm, narrow side (8) size For 123.82mm.
5. a kind of lateral arrangement High-Power Microwave single mode processor according to claim 1, which is characterized in that the load Pipe (2) is the N-shaped fallen, is made of electromagnetic wave transparent material.
6. a kind of lateral arrangement High-Power Microwave single mode processor according to claim 1, which is characterized in that the load It manages (2) and passes through microwave excitation cavity (1) from microwave excitation cavity (1) narrow side (8), make material conveying direction and microwave excitation in load pipe The interior microwave transmission direction of chamber (1) is vertical.
7. a kind of lateral arrangement High-Power Microwave single mode processor according to claim 1, which is characterized in that the cut-off Waveguide (9) is located at load pipe (2) at narrow side (8), integrally welded with microwave excitation cavity (1).
8. a kind of lateral arrangement High-Power Microwave single mode processor according to claim 1, which is characterized in that the cut-off Waveguide (9) is circular configuration, also, the cut-off waveguide (9) internal diameter is less than narrow side (8) size, cut-off waveguide (9) length Greater than 1.5 times of the cut-off waveguide (9) internal diameter.
9. a kind of lateral arrangement High-Power Microwave single mode processor according to claim 1, which is characterized in that the adjustment Pin enters the depth in microwave excitation cavity (1) by it, adjusts microwave excitation cavity (1) interior microwave reflection wave phase, makes incidence After wave is superimposed with back wave, load pipe is in microwave excitation cavity (1) internal electric field most strength or magnetic field most strength.
10. a kind of lateral arrangement High-Power Microwave single mode processor according to claim 1, which is characterized in that the company Acting flange (4) makes microwave excitation cavity (1) be connected with microwave source, and microwave source is by microwave from connecting flange (4) mouth feed-in microwave excitation Chamber (1).
CN201821127921.4U 2018-07-14 2018-07-14 A kind of lateral arrangement High-Power Microwave single mode processor Active CN208768315U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108924981A (en) * 2018-07-14 2018-11-30 深圳市星聚工业自动化有限公司 A kind of lateral arrangement High-Power Microwave single mode processor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108924981A (en) * 2018-07-14 2018-11-30 深圳市星聚工业自动化有限公司 A kind of lateral arrangement High-Power Microwave single mode processor

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Address after: 518000 Dong801, Mingxing Power Industrial Park, Baiyunshan New Village, Tongsheng Community, Dalang Street, Longhua District, Shenzhen City, Guangdong Province

Patentee after: Shenzhen Hongwei Microwave Technology Co., Ltd.

Address before: 518000 Silver Star Science and Technology Building, 1301 Sightseeing Road, Guanzhi Street, Longhua New District, Shenzhen City, Guangdong Province, 9th Floor

Patentee before: Shenzhen Xingju Industrial Automation Co., Ltd.