CN208752958U - The under-voltage protecting circuit and embedded system of storage chip - Google Patents
The under-voltage protecting circuit and embedded system of storage chip Download PDFInfo
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- CN208752958U CN208752958U CN201821555195.6U CN201821555195U CN208752958U CN 208752958 U CN208752958 U CN 208752958U CN 201821555195 U CN201821555195 U CN 201821555195U CN 208752958 U CN208752958 U CN 208752958U
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Abstract
The utility model discloses a kind of under-voltage protecting circuit of storage chip and embedded systems; wherein; the input terminal of the Voltage stabilizing module of under-voltage protecting circuit is connect with external power supply; the connection of the first input end of its first output end and comparison module; the voltage of its second output terminal ground connection, the first output end output of Voltage stabilizing module is benchmark voltage；Reference voltage is determined by the internal pressure drops value and target voltage of comparison module；Second input terminal of comparison module is connect with external power supply, the control terminal connection of output end and switch module；The input terminal of switch module is connect with external power supply, the feeder ear connection of output end and external memory chip；When the supply voltage that the second input terminal of comparison module inputs is lower than target voltage, the output end of comparison module exports cut-off signals, closes switch module.The utility model protects the normal data in external memory chip not to be written over by circuit structure, avoids subsequent cell that loss caused by data read errors occurs.
Description
Technical field
The utility model relates to protect the under-voltage protecting circuit of field of circuit technology more particularly to a kind of storage chip and embedding
Embedded system.
Background technique
In various embedded systems, storage chip is common and essential information recording device, can store and is
The various parameters that system is used, such as device address, communications parameter, the information such as historical data.
Currently, generally using power down protection for storage chip, realized by power-fail detection circuit combination switching circuit；
The defect of this mode is, in the occasion of some slow power down, for example needs to do some data preservations when detecting power down,
Currently running parameter is directly read out when powering on convenient for next time and is then run, have in the circuit board farad capacitor or after
Standby battery is powered, if that single-chip microcontroller can still work normally, and storage chip may be between critical state.Single-chip microcontroller continues
If reading and writing to it, it is just very likely to cause the confusion of data, write-in and the data read are at all inconsistent, even if there is data school
Test mechanism, as single-chip microcontroller is written with uncontrollable data, and lead to data corruption, under subnormal parameter when powering on be wrong
Accidentally, system can be allowed according to the logic operation of mistake, it is possible to will cause serious consequence.
Utility model content
The under-voltage protecting circuit and embedded system of storage chip provided by the utility model, main purpose are to overcome
Existing storage chip some slow power down occasion, single-chip microcontroller read storage chip data when, be easy to happen data reading
Mistake is taken, the problem of caused run-time error.
In order to solve the above technical problems, the utility model adopts the following technical solution:
A kind of under-voltage protecting circuit of storage chip, including Voltage stabilizing module, comparison module and switch module；
The Voltage stabilizing module, input terminal are connect with external power supply, and the first of the first output end and the comparison module
The voltage of input terminal connection, second output terminal ground connection, the first output end output of the Voltage stabilizing module is benchmark voltage；It is described
Reference voltage is determined by the internal pressure drops value and target voltage of the comparison module；
The comparison module, the second input terminal are connect with external power supply, and the control terminal of output end and switch module connects
It connects；
The switch module, input terminal are connect with external power supply, and the feeder ear of output end and external memory chip connects
It connects；
When the supply voltage that the second input terminal of the comparison module inputs is lower than target voltage, the comparison module
Output end export cut-off signals, close the switch module.
As an embodiment, the target voltage is the minimum supply voltage of external memory chip.
As an embodiment, the target voltage is 2.8V.
As an embodiment, the Voltage stabilizing module includes resistance R1 and zener diode；
One end of the resistance R1 is connect respectively with the first input end of the comparison module and the anode of zener diode
Connection；
The cathode of the zener diode is grounded.
As an embodiment, the model 1N4758A of the zener diode.
As an embodiment, the comparison module include resistance R2, resistance R3, resistance R4 and triode Q1 with
And triode Q2；
First input end of the one end of the resistance R2 as comparison module, the other end base with the triode Q1 respectively
Pole is connected with one end of resistance R3；
The other end of the resistance R3 and the emitter of triode Q1 are connected to the second input terminal of comparison module；
The triode Q2, base stage are connect by the resistance R4 with the collector of triode Q1, emitter ground connection,
Output end of its collector as comparison module.
As an embodiment, the switch module includes resistance R5 and metal-oxide-semiconductor；
The metal-oxide-semiconductor, source electrode are connect with one end of the resistance R5 and external power supply respectively, grid respectively with it is described
The output end of comparison module is connected with the other end of resistance R5, and drain electrode is connect with the feeder ear of external memory chip；According to institute
The cut-off signals of metal-oxide-semiconductor grid input are stated to control on off operating mode locating for the metal-oxide-semiconductor.
As an embodiment, the metal-oxide-semiconductor is PMOS tube, model SI2301.
Correspondingly, the utility model also provides a kind of embedded system, including single-chip microcontroller, voltage detection module and under-voltage
Protect circuit；
The voltage detection module is connect with the single-chip microcontroller and external power supply respectively, is used for real-time detection external power supply
Supply voltage, generate alarm signal when monitoring supply voltage lower than target voltage, and alarm signal is transmitted to monolithic
Machine；
The single-chip microcontroller is connect with the external memory chip of the under-voltage protecting circuit, for receiving alarm signal
Afterwards, stop reading the data in the storage chip.
Compared with prior art, the technical program has the advantage that
The under-voltage protecting circuit of storage chip provided by the utility model, by internal pressure drops value and the target electricity of comparison module
It presses and determines reference voltage, pass through the first input of the first output end outputting reference voltage of Voltage stabilizing module to the comparison module
End；Comparison module is compared judgement to the reference voltage of its first input end and the supply voltage of the second input terminal, is judging
For supply voltage lower than target voltage when, the output end of comparison module exports cut-off signals, closes switch module, to make
External power supply stops powering to external memory chip, protects the normal data in external memory chip not to be written over, after avoiding
Data read errors occur for continuous unit, and caused run-time error reduces loss.
Detailed description of the invention
Fig. 1 is the module diagram of the under-voltage protecting circuit for the storage chip that the utility model embodiment one provides；
Fig. 2 is the electrical block diagram of the under-voltage protecting circuit for the storage chip that the utility model embodiment one provides；
Fig. 3 is the module diagram for the embedded system that the utility model embodiment two provides.
In figure: 1, Voltage stabilizing module；2, comparison module；3, switch module；4, under-voltage protecting circuit；5, voltage detection module；
6, single-chip microcontroller.
Specific embodiment
Below in conjunction with attached drawing, the above and other technical features and advantages of the present invention are carried out clearly and completely
Description, it is clear that described embodiment is only the section Example of the utility model, rather than whole embodiments.
Please refer to Fig. 1 and Fig. 2, the under-voltage protecting circuit for the storage chip that the utility model embodiment one provides, including it is steady
Die block 1, comparison module 2 and switch module 3；Voltage stabilizing module 1, input terminal is connect with external power supply, the first output end
It is connect with the first input end of comparison module 2, second output terminal ground connection, the voltage of the first output end output of Voltage stabilizing module 1
For benchmark voltage；Reference voltage is determined by the internal pressure drops value and target voltage of comparison module 2；Comparison module 2, the second input
End is connect with external power supply, and output end is connect with the control terminal of switch module 3；Switch module 3, input terminal and external power supply
The feeder ear of connection, output end and external memory chip connects；In the supply voltage that the second input terminal of comparison module 2 inputs
Lower than target voltage when, the output end of comparison module 2 exports cut-off signals, closes switch module 3.
It should be noted that the supply voltage of external power supply is a undulating value in practice, especially some slow
The occasion of power down will lead to subsequent cell, such as singly if supply voltage makes external memory chip be in critical state
Piece machine is after reading the data in external memory chip, it may appear that run-time error causes unnecessary loss.So, Yu Benshi
It applies in example, target voltage is pre-set, minimum supply voltage of the target voltage more than or equal to external memory chip.Namely
Say, as long as supply voltage is lower than the minimum supply voltage that external memory chip works normally, then shut off external power supply to
The power supply of external memory chip, to achieve the purpose that under-voltage protection.In other embodiments, target voltage can be external storage
The minimum supply voltage of chip.And target voltage is set as 2.8V.In different application scenarios, for combining other types of deposit
It stores up chip to use, as long as selecting the zener diode in the voltage regulator circuit to match to determine reference voltage i.e. according to target voltage
Can, circuit does not need to do any change, has extremely strong versatility.
Under-voltage protecting circuit includes Voltage stabilizing module 1, comparison module 2 and switch module 3.Voltage stabilizing module 1 is comparison module 2
Reference voltage is provided, and reference voltage is determined by the internal pressure drops value and target voltage of comparison module 2, according to unused applied field
The demand of scape or target voltage, reference voltage can change.The internal pressure drops value of comparison module 2 is that have comparison module 2
Internal circuit configuration decision, usually a fixed value.For example, what comparison module 2 was made of triode, internal pressure drops value is
0.7V.In this present embodiment, reference voltage is to subtract the internal pressure drops value of comparison module 2 in target voltage.It is in target voltage
When 2.8V, reference voltage is just 2.1V.In other embodiments, the input terminal of Voltage stabilizing module 1 can connect other power supplys.
Switch module 3 includes being not limited to switching tube and switching circuit, and switch module 3 is arranged in external power supply and external storage
Chip is direct, opens whether control external power supply gives external memory chip power supply by the on off operating mode of switch module 3.Comparison module
2 be whether to export cut-off signals come the output end of multilevel iudge comparison module 2 according to the voltage of two input terminals input.Actually
The supply voltage of namely the second input terminal input of comparison module 2 is compared with target voltage, i.e. the in comparison module 2
The supply voltage of two input terminals input lower than target voltage when, the output end of comparison module 2 exports cut-off signals, makes switching molding
Block 3 is closed.The utility model belongs to hardware circuit protection mechanism, and single-chip microcontroller independent of subsequent cell itself is to storage chip
Protection because the embedded software that single-chip microcontroller itself is run it is possible that crash the case where, cause protection mechanism that may lose
Spirit.And the device of the utility model circuit is simple, has no special requirements to model, and busy line plate bulk is few, but can be reliable
Protection various parameters, play the role of to the normal operation of system vital.
The under-voltage protecting circuit of storage chip provided by the utility model, by the internal pressure drops value and target of comparison module 2
Voltage determines reference voltage, passes through the first input of the first output end outputting reference voltage of Voltage stabilizing module 1 to comparison module 2
End；Comparison module 2 is compared judgement to the reference voltage of its first input end and the supply voltage of the second input terminal, is judging
For supply voltage lower than target voltage when, the output end of comparison module 2 exports cut-off signals, close switch module 3, thus
Make external power supply stop powering to external memory chip, protects the normal data in external memory chip not to be written over, avoid
Data read errors occur for subsequent cell, and caused run-time error reduces loss.
Modules are described in detail below:
Voltage stabilizing module 1 includes resistance R1 and zener diode；One end of resistance R1 is inputted with the first of comparison module 2 respectively
The anode connection of end connection and zener diode；The cathode of zener diode is grounded.It first passes through after resistance R1 is divided with steady
Diode outputting reference voltage is pressed, guarantees the accuracy of reference voltage.And the model of zener diode can be selected directly
1N47XX series.It is needed to select corresponding model according to unused reference voltage, it is easy to use.In this present embodiment,
The model of zener diode can be 1N4758A.
Comparison module 2 includes resistance R2, resistance R3, resistance R4 and triode Q1 and triode Q2；The one of resistance R2
The first input end as comparison module 2 is held, the other end is connect with one end of the base stage of triode Q1 and resistance R3 respectively；Resistance
The other end of R3 and the emitter of triode Q1 are connected to the second input terminal of comparison module 2；Triode Q2, base stage pass through
Resistance R4 is connect with the collector of triode Q1, emitter ground connection, output end of the collector as comparison module 2.By electricity
Resistance R3 and resistance R2 determines the internal pressure drops value of comparison module 2.In this present embodiment, triode Q1 is positive-negative-positive, internal pressure drops value
For 0.7V.When supply voltage is lower than reference voltage and the additive value of internal pressure drops value, triode Q1 is not turned on, then triode
Q2 is naturally also not turned on, i.e., comparison module 2 exports cut-off signals；It is higher than the phase of reference voltage and internal pressure drops value in supply voltage
When value added, triode Q1 conducting, so that being connected by resistance R4 with the triode Q1 triode Q2 being connected, i.e., comparison module 2 is defeated
Admittance messenger out.The comparison module 2 of the utility model, structure is simple, and busy line plate bulk is few.
Switch module 3 includes resistance R5 and metal-oxide-semiconductor；Metal-oxide-semiconductor, source electrode connect with one end of resistance R5 and external power supply respectively
It connects, grid is connect with the other end of the output end of comparison module 2 and resistance R5 respectively, the confession of drain electrode and external memory chip
Electric end connection；On off operating mode locating for metal-oxide-semiconductor is controlled according to the cut-off signals of metal-oxide-semiconductor grid input.Metal-oxide-semiconductor is PMOS tube,
Model SI2301.In the low and high level signal that comparison module 2 exports, when combining switch module 3 really, if triode Q2
Conducting, then the Continuity signal exported is high level, so that metal-oxide-semiconductor is connected.If triode Q2 is closed, triode Q2 is drawn
The control terminal of low switch module 3, the cut-off signals of output are low levels, so that metal-oxide-semiconductor is closed.In other embodiments, PMOS
The model of pipe can be A04421.
It is illustrated below with reference to under-voltage protecting circuit working principle of the example to the composition of above-mentioned module: for example, external
The supply voltage of power supply is 2.7V~3.6V；Protection voltage, that is, target voltage is 2.8V, and zener diode selects 1N47XX system
Column, pressure stabilizing value are 2.1V.When supply voltage is greater than 2.8V, i.e. when the emitter of triode Q1 0.7V bigger than base voltage, three
Pole pipe Q1 conducting, the base stage of triode Q2 just have the voltage greater than 0.7V, by R4 current-limiting resistance, triode Q2 are connected, and three
The source voltage of pole pipe Q2 is 0.That is the grid voltage of PMOS tube is 0, for PMOS tube, as long as grid voltage ratio
The low 2.5V of source electrode, will be connected.Draining just has voltage 3.3V to export powers to storage chip, so when input terminal voltage is in 2.8V
When~3.3V changes, external memory chip voltage is similarly 2.8V~3.3V, when input terminal voltage is less than 2.8V, triode Q2
It is shut off, so that PMOS tube is closed, external memory chip supply voltage moment drops to 0V, protects the normal number of external memory chip
According to.
Based on the design of same utility model, the utility model embodiment two provides a kind of embedded system, the system
The process for implementing can refer to foregoing circuit is realized, it is no longer redundant later to repeat place.
As shown in figure 3, it includes single-chip microcontroller 6, voltage detecting mould that the utility model embodiment two, which provides a kind of embedded system,
Block 5 and under-voltage protecting circuit 4；Voltage detection module 5 is connect with single-chip microcontroller 6 and external power supply respectively, for outside real-time detection
The supply voltage of portion's power supply generates alarm signal when monitoring supply voltage lower than target voltage, and alarm signal is transmitted
To single-chip microcontroller 6；Single-chip microcontroller 6 is connect with the external memory chip of under-voltage protecting circuit 4, for stopping after receiving alarm signal
Only read the data in storage chip.Single-chip microcontroller 6 carries out duplicate protection to the data in storage chip, is utilized respectively voltage detecting
Module 5 carrys out control single chip computer 6, and is protected using the hardware circuit of under-voltage protecting circuit 4, further increases reading data
The problem of safety, avoids the occasion in slow power down, and data read errors occur for single-chip microcontroller 6, caused run-time error.
Although the utility model has been described by way of example and in terms of the preferred embodiments, but it is not to appoint for limiting the utility model
What those skilled in the art without departing from the spirit and scope of the utility model, may be by the method and skill of the disclosure above
Art content makes possible variation and modification to technical solutions of the utility model, therefore, all without departing from the utility model technology
The content of scheme, it is made by the above technical examples according to the technical essence of the present invention it is any it is simple modification, equivalent variations and
Modification, belongs to the protection scope of technical solutions of the utility model.
Claims (9)
1. a kind of under-voltage protecting circuit of storage chip, which is characterized in that including Voltage stabilizing module, comparison module and switching molding
Block；
The Voltage stabilizing module, input terminal are connect with external power supply, the first input of the first output end and the comparison module
The voltage of end connection, second output terminal ground connection, the first output end output of the Voltage stabilizing module is benchmark voltage；The benchmark
Voltage is determined by the internal pressure drops value and target voltage of the comparison module；
The comparison module, the second input terminal are connect with external power supply, the control terminal connection of output end and switch module；
The switch module, input terminal are connect with external power supply, the feeder ear connection of output end and external memory chip；
In the supply voltage that the second input terminal of the comparison module inputs lower than when target voltage, the comparison module it is defeated
Outlet exports cut-off signals, closes the switch module.
2. the under-voltage protecting circuit of storage chip as described in claim 1, which is characterized in that the target voltage is deposited for outside
Store up the minimum supply voltage of chip.
3. the under-voltage protecting circuit of storage chip as claimed in claim 2, which is characterized in that the target voltage is 2.8V.
4. the under-voltage protecting circuit of storage chip as described in claim 1, which is characterized in that the Voltage stabilizing module includes resistance
R1 and zener diode；
One end of the resistance R1 is connect respectively with the first input end of the comparison module and the anode connection of zener diode；
The cathode of the zener diode is grounded.
5. the under-voltage protecting circuit of storage chip as claimed in claim 4, which is characterized in that the model of the zener diode
For 1N4758A.
6. the under-voltage protecting circuit of storage chip as described in claim 1, which is characterized in that the comparison module includes resistance
R2, resistance R3, resistance R4 and triode Q1 and triode Q2；
First input end of the one end of the resistance R2 as comparison module, the other end respectively with the base stage of the triode Q1 and
One end of resistance R3 connects；
The other end of the resistance R3 and the emitter of triode Q1 are connected to the second input terminal of comparison module；
The triode Q2, base stage are connect by the resistance R4 with the collector of triode Q1, emitter ground connection, collection
Output end of the electrode as comparison module.
7. the under-voltage protecting circuit of storage chip as described in claim 1, which is characterized in that the switch module includes resistance
R5 and metal-oxide-semiconductor；
The metal-oxide-semiconductor, source electrode are connect with one end of the resistance R5 and external power supply respectively, and grid is respectively compared with described
The output end of module is connected with the other end of resistance R5, and drain electrode is connect with the feeder ear of external memory chip；According to the MOS
The cut-off signals of tube grid input control on off operating mode locating for the metal-oxide-semiconductor.
8. the under-voltage protecting circuit of storage chip as claimed in claim 7, which is characterized in that the metal-oxide-semiconductor is PMOS tube, type
Number be SI2301.
9. a kind of embedded system, which is characterized in that including single-chip microcontroller, voltage detection module and as claim 1-8 is any
Under-voltage protecting circuit described in；
The voltage detection module is connect with the single-chip microcontroller and external power supply respectively, the electricity for real-time detection external power supply
Source voltage generates alarm signal when monitoring supply voltage lower than target voltage, and alarm signal is transmitted to single-chip microcontroller；
The single-chip microcontroller is connect with the external memory chip of the under-voltage protecting circuit, for stopping after receiving alarm signal
Only read the data in the storage chip.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821555195.6U CN208752958U (en) | 2018-09-21 | 2018-09-21 | The under-voltage protecting circuit and embedded system of storage chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821555195.6U CN208752958U (en) | 2018-09-21 | 2018-09-21 | The under-voltage protecting circuit and embedded system of storage chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113359672A (en) * | 2021-06-17 | 2021-09-07 | 南方电网数字电网研究院有限公司 | Electric power system chip protection control circuit board and secondary equipment in electric power system |
-
2018
- 2018-09-21 CN CN201821555195.6U patent/CN208752958U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113359672A (en) * | 2021-06-17 | 2021-09-07 | 南方电网数字电网研究院有限公司 | Electric power system chip protection control circuit board and secondary equipment in electric power system |
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