CN208722865U - Metal enclosure wall - Google Patents
Metal enclosure wall Download PDFInfo
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- CN208722865U CN208722865U CN201821375499.4U CN201821375499U CN208722865U CN 208722865 U CN208722865 U CN 208722865U CN 201821375499 U CN201821375499 U CN 201821375499U CN 208722865 U CN208722865 U CN 208722865U
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- clathrum
- enclosure wall
- substrate
- surface layer
- metal
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Abstract
The utility model provides a kind of metal enclosure wall, comprising: surface layer is the electrically conductive solid sheet for being fixedly connected on clathrum upper end, is highly not higher than 2mm；Clathrum is attached to the upper surface of transition zone and is made of hollow grid prepared by material identical as surface layer, is highly 1-4mm；Substrate, for the smooth ceramic wafer on support surface layer and clathrum, thickness is in 4mm or less；Transition zone, by the way that the metal sheet being fixedly connected between substrate and clathrum is electroplated, to improve the binding force of clathrum and substrate.The metal enclosure wall solve metal and it is nonmetallic between Problem of Wettability, realize print metal parts on non-metal base plate for the first time, and bond strength is big, fully meet use demand.
Description
Technical field
The utility model relates to a kind of enclosure wall of stationary semiconductor devices, in particular to a kind of 3D printing suitable for chip
Metal enclosure wall obtained.
Background technique
In recent years, semiconductor devices and integrated circuit are quickly grown, and application is also increasingly extensive.Chip is integrated circuit
Carrier, the preparation and assembling of chip are the important components of semiconductor devices.
In the preparation and packaging technology of chip, the package substrate of chip needs just to be able to achieve chip circuit with electric action
The effect of connection.Currently, the package substrate of chip often uses electroplating processes, make substrate that there is electrical conductance, and meet chip
Air-tightness requirement.
However, in plating process need that plating metal is integrated on package substrate in layer, when treatment process
Between it is long, step is complicated；Since multilayer is handled by several times, so that the binding force between layer structure, between package substrate and plating metal
It is weaker, it is very easy to peel off, leads to the degradations such as electric conductivity or the air-tightness of chip.In addition, in electroplating processes often
Need to increase the processing difficulty of electroplating effluent using heavy metal ion such as nickel, gold；Also easily cause serious environment dirty
Dye.
Based on the above issues, the present inventor improves the prior art, develops a kind of suitable for fixed and encapsulation core
The metal enclosure wall of piece.
Utility model content
To solve the above-mentioned problems, present inventor has performed sharp studies, provide a kind of suitable for fixed and encapsulation core
Metal enclosure wall made from the 3D printing of piece, as a result, it has been found that: by the way that transition zone is arranged, material of different nature can be well solved
Difficulty big problem when be combineding with each other；Also, the contact area of enclosure wall and ceramic substrate is controlled by the way of grid, can be subtracted
The thermal stress that few substrate is born, keeps its flatness, so as to complete the utility model.
The purpose of this utility model is to provide a kind of metal enclosure walls, this is used for the metal enclosure wall packet of stationary semiconductor devices
It includes:
Surface layer 1 is the electrically conductive solid sheet for being fixedly connected on 2 upper end of clathrum, is highly not higher than 2mm；
Clathrum 2 is attached to the upper surface of transition zone 3 and is made of hollow grid prepared by material identical as surface layer 1,
Height is 1-4mm；
Substrate 4 is the smooth ceramic wafer for being used to support surface layer 1 and clathrum 2, and thickness is in 4mm or less；
Transition zone 3, to be fixedly connected on the metal sheet between substrate 4 and clathrum 2 by plating, to improve grid
The binding force of layer 2 and substrate 4.
Grid lines is interlaced in the clathrum 2 assumes diamond in shape；Also, surface layer 1 and clathrum 2 are around formation for installing
The setting of semiconductor devices it is close-shaped.
According to metal enclosure wall provided by the utility model, have the advantages that
(1) metal enclosure wall provided by the utility model solve metal and it is nonmetallic between Problem of Wettability, it is real for the first time
Metal parts are printed on present non-metal base plate, and bond strength is big, fully meets use demand；
(2) customization, personalization may be implemented in metal enclosure wall provided by the utility model；Compare traditional plating processing work
Skill, metal enclosure wall provided by the utility model is high in machining efficiency, short preparation period, and completely solves the pollution problem of plating；
(3) in metal enclosure wall provided by the utility model, by the way that clathrum 2 and surface layer 1 is accurately arranged, gold is accurately controlled
The energy input problem for belonging to enclosure wall growth course, avoids nonmetallic substrate deformation and cracking.
Detailed description of the invention
Fig. 1 shows a kind of structural schematic diagram of clathrum in metal enclosure wall in preferred embodiment；
Fig. 2 shows the structural schematic diagrams of multiple enclosure walls in metal enclosure wall in a kind of preferred embodiment；
Fig. 3 shows the surface layer of metal enclosure wall and the connection schematic diagram of clathrum in a kind of preferred embodiment；
Fig. 4 shows a kind of schematic diagram of a layer structure of metal enclosure wall in preferred embodiment.
Drawing reference numeral explanation:
The surface layer 1-
2- clathrum
3- transition zone
4- substrate
Specific embodiment
It is described in detail below by the utility model, the characteristics of the utility model and advantage will be with these explanations
And it becomes more apparent from, is clear.
Dedicated word " exemplary " means " being used as example, embodiment or illustrative " herein.Here as " exemplary "
Illustrated any embodiment should not necessarily be construed as preferred or advantageous over other embodiments.Although each of embodiment is shown in the attached drawings
In terms of kind, but unless otherwise indicated, it is not necessary to attached drawing drawn to scale.
In the description of the present invention, it should be noted that term " on ", "lower", "inner", "outside", "front", "rear",
The orientation or positional relationship of the instructions such as " left side " and " right side " is based on the orientation or positional relationship under utility model works state, only
It is the utility model and simplified description for ease of description, rather than the device or element of indication or suggestion meaning must have spy
Fixed orientation is constructed and operated in a specific orientation, therefore should not be understood as limiting the present invention.
The utility model described below.
The utility model provides one kind and is suitable for semiconductor devices, is particularly suitable for metal that is fixed and encapsulating chip and encloses
Wall, the metal enclosure wall include sequentially connected surface layer 1, clathrum 2 and substrate 4 from top to bottom, as shown in Figure 4.
In the present invention, the substrate 4 is smooth hard sheet, to support surface layer 1 and clathrum 2.
Wherein, the substrate 4 is non-metal board, is preferably made of ceramic wafer or thermosetting resin-fiberglass composite plate.
Preferably, the substrate 4 is by alumina ceramic plate, al nitride ceramic board, al nitride ceramic board, beryllium oxide ceramics
Plate, talcum porcelain plate and polyphenylene oxide-fiberglass composite plate, in arbitrarily be made.Preferably, the substrate 4 is by aluminium oxide ceramics
Plate or al nitride ceramic board are made.
The substrate 4 has good electrical insulation performance, and thermal coefficient is high, and intensity is high, have a wide range of application, manufacturing price it is low,
Suitable for industrial long-term production.
The thickness of the substrate 4 is in 4mm or less, it is preferable that the substrate 4 with a thickness of 3mm hereinafter, more preferably the base
Plate 4 with a thickness of 1-2mm.At this point, substrate 4 has enough intensity, it can be 2 upper surface of multiple clathrums 2 and clathrum
Surface layer 1 provides support；Meanwhile substrate 4 can also bear the thermal stress generated when 3D printing clathrum 2.
Since the thickness of substrate 4 is bigger, thermal resistance is bigger, and semiconductor electrical component obtained is less susceptible to radiate.And substrate 4
Thickness it is too small when, for clathrum 2 when adhering on substrate 4 and growing, the thermal stress for printing generation is easy to make the bending of substrate 4 to become
Shape is even broken.
The substrate 4 of the thickness can be resistant to the thermal stress of 3D printing, keep the planarization of substrate 4；Meanwhile the thickness
Substrate 4 can also reduce thermal resistance, be conducive to element using when radiate.
In the prior art, the enclosure wall of the encapsulation chip grown on substrate 4 is conductive due to needing, often using electricity
The technology of plating realizes the growth of enclosure wall.However, the enclosure wall height of encapsulation chip is generally not less than 3mm, using one layer of electroplating technology
One layer by metal plating in the surface of substrate 4, cycle period is very long, it is clear that is unfavorable for improving production efficiency.
Therefore, the utility model creatively uses 3D printing, carries out 3D printing especially with metal-powder, makes to encapsulate
The enclosure wall of chip fast-growth on substrate 4.
Since the enclosure wall of encapsulation chip is grown using metal-powder, and the material of substrate 4 is nonmetallic, the property of the two material
There are great differences for matter, is difficult that the two is firmly combined when the enclosure wall for encapsulating chip is grown directly upon on substrate 4, is very easy to
It peels off, causes unstable quality, so that metal enclosure wall had using the defects of time is short, anti-impact force is weak.
In order to overcome substrate 4 and the big difficulty of enclosure wall nature difference that the upper surface of substrate 4 is particularly provided with transition
Layer 3 makes to realize gradient transition between the enclosure wall for encapsulating chip and the material properties of substrate 4, is conducive to the binding force for improving the two.
In the present invention, clathrum 2 and the circular formation in surface layer 1 of end face thereon are set close-shaped, in its shape
At enclosure space in chip placement or other semiconductor devices, clathrum 2 and surface layer 1 are the enclosure wall for encapsulating chip.
The surface layer 1 and clathrum 2 can be set to any close-shaped such as rectangular, round, oval as needed
Shape, here, around the shape formed and being not specifically limited to surface layer 1 and clathrum 2.Surface layer 1 and clathrum 2 are set as setting
Shape.
It for ease of description, while being also a kind of preferred embodiment, surface layer 1 and clathrum 2, which are surround, forms rectangular enclose
Wall.The rectangular enclosure wall is provided with multiple rows of and multiple row, and as depicted in figs. 1 and 2, multiple enclosure walls are set on same substrate 4, convenient for criticizing
Measure print processing；The setting of multiple enclosure walls can also meet the needs of using multiple metal enclosure walls.
Wherein, the transition zone 3 is preferably metal layer, and with a thickness of 0.1-2 μm, more preferably it is with a thickness of 0.3-1.5 μm.
In the present invention, the transition zone 3 is incorporated in the surface of substrate 4 using electric plating method, and the transition zone 3 of the thickness is made
The standby time is short, reliable with the firm binding force of substrate 4；It also avoids substrate 4 directly to contact with clathrum 2, so as to avoid two
The weak problem of binding force caused by person's Material property differences.
Any gold that 4 surface of substrate can be plated on by electro-plating method in the prior art can be used in the transition zone 3
Belong to material preparation, such as can be made of copper.
In a preferred embodiment, the transition zone 3 prepare material and clathrum 2 to prepare material identical.
The study found that the transition zone 3 being set between substrate 4 and clathrum 2, can significantly improve clathrum 2 and substrate 4
Binding force, improve metal and it is nonmetallic between wetability.
Realize that the enclosure wall fast-growth of encapsulation chip can shorten the production cycle using 3D printing technique, however, printing
Middle laser can generate a large amount of heat, when which acts on substrate 4, it is easy to cause deformation or the cracking of substrate 4.
Therefore, control clathrum 2 and substrate 4 contact area, help to maintain the smooth of substrate 4, avoid its deform or
Cracking.However, can reduce the binding force of the two when the contact area of clathrum 2 and substrate 4 is too small, not be able to satisfy mechanical strength
It is required that.
Preferably, the clathrum 2 is made of hollow grid, is attached to the upper surface of transition zone 3, and be located at surface layer 1
Lower end.The clathrum 2 is that surface layer 1 provides support, is the chief component in chip enclosure wall.
In the clathrum 2, the line width of grid lines is the thickness of grid.Web thickness preferably 0.1-0.3mm, into one
Step is preferably 0.15-0.25mm, preferably 0.15-0.2mm.When web thickness is smaller, grid obtained is easy to be crushed, no
Only product appearance is poor, is also easy to cause clathrum 2 and the combination of substrate 4 poor, so that air-tightness is unqualified.
By the way that web thickness is arranged, energy input in 2 growth course of clathrum and clathrum 2 and substrate are accurately controlled
The problem of 4 contact area, realizes the combination of metallic print part and non-metal base plate, both efficiently solve binding force and
The problem of ultra thin substrate deforms.
The height of the clathrum 2 is 1-4mm, and preferably 2-4mm, most preferably 2-3mm can satisfy encapsulation semiconductor
The demand of element.
In the clathrum 2, the shape of grid can be set to diamond shape, may be set to be square, can also be arranged
For equilateral triangle, as long as isometric for side in grid cell.
Further, as shown in Figure 1, the shape of the grid cell is diamond shape, print processing of being more convenient for；Also have simultaneously
Preferable mechanical function.
The upper surface of clathrum 2 is provided with surface layer 1, is fixedly connected on the upper end of clathrum 2.It is preferred that the surface layer 1
For the solid sheet of surfacing, the more preferable surface layer 1 is made by 3D printing method.
Surface layer 1 is set to the surface of clathrum 2, and when using 3D printing method preparation surface layer 1, the scraper of printer is in net
The surface of compartment 2 is firstly the need of progress powdering operation.Due to having network in clathrum 2, the powder being coated with may fall
It falls in the grid of clathrum 2, causes powder to be coated with unevenly, seriously affect printing effect.
The study found that by adjusting the partial size for being coated with powder in clathrum 2 when the spacing and printable surface layer 1 of grid lines,
The 3D printing process on surface layer 1 can be made to smoothly complete to avoid this phenomenon.
In a preferred embodiment, the spacing of adjacent two parallel grids line is not more than in the clathrum 2
1.2mm, preferably more than 1.0mm, preferably 0.8mm or less.In addition, the partial size for being coated with powder when printable surface layer 1 is 20-80 μ
M, preferably 20-60 μm.Can clathrum 2 surfacing be coated with the powder of printable surface layer 1.
Since surface layer 1 is entity, using needing sequentially to arrange successively printing until completing on one side along certain when 3D printing, make
It is firm whole that powder is all combined into one, and is securely attached to the upper end of clathrum 2, as shown in Figure 3.
In printable surface layer 1, since laser printing density is big, a large amount of heat can be generated in the short time, will affect substrate 4
Flatness, be very easy to make it to deform or cracking.In addition, when the thickness on surface layer 1 is excessive, laser energy that when printing needs
Also the phenomenon that higher, the thermal stress that substrate 4 is born is also bigger, is also more easy to produce the deformation of substrate 4 or cracking.
Therefore, the height on the surface layer 1 is not higher than 2mm, preferably in 1.5mm hereinafter, the height on most preferably surface layer 1 is not higher than
1mm.At this point, surface layer 1 smooth can be firmly attached to the upper end of clathrum 2, the flatness of substrate 4 also will not influence.
It is preferable to use metal-powders to be printed on the surface layer 1, the metal-powder include comminuted steel shot, aluminium powder, titanium valve, bronze and
One of silver powder is a variety of.
In order to improve the binding force on surface layer 1 and clathrum 2, the preferably described surface layer 1 and clathrum 2 use identical material system
Standby, material amalgamation is good, can be weak to avoid binding force caused by material properties difference.
In metal enclosure wall provided by the utility model, realizes print metal parts on non-metal base plate for the first time；And
The enclosure wall of nonmetallic substrate 4 and metal can be securely joined with, and mechanical property prepares enclosure wall considerably beyond electro-plating method
Mechanical property fully meets use demand.
Meanwhile metal enclosure wall provided by the utility model realizes the customization of metal enclosure wall, personalization, compares traditional
Electro-plating method significantly improves processing efficiency, and completely solves the pollution problem of electro-plating method.
Combine detailed description and exemplary example that the utility model is described in detail above, but these are said
It is bright to be construed as a limitation of the present invention.It will be appreciated by those skilled in the art that without departing from the spirit of the present invention and
In the case where range, a variety of equivalent substitution, modification or improvements can be carried out to technical solutions of the utility model and embodiments thereof,
These each fall in the scope of the utility model.The protection scope of the utility model is determined by the appended claims.
Claims (10)
1. a kind of metal enclosure wall, which is characterized in that the metal enclosure wall for being used for stationary semiconductor devices includes:
Surface layer (1) is the electrically conductive solid sheet for being fixedly connected on clathrum (2) upper end, is highly not higher than 2mm；
Clathrum (2) is attached to the upper surface of transition zone (3), and the hollow grid group prepared by material identical as surface layer (1)
At being highly 1-4mm；
Substrate (4) is the smooth ceramic wafer for being used to support surface layer (1) and clathrum (2), and thickness is in 4mm or less；With,
Transition zone (3), to be fixedly connected on the metal sheet between substrate (4) and clathrum (2) by plating, to improve net
The binding force of compartment (2) and substrate (4).
2. metal enclosure wall according to claim 1, which is characterized in that the height of the surface layer (1) is in 1.5mm or less.
3. metal enclosure wall according to claim 1, which is characterized in that the height of the surface layer (1) is in 1mm or less.
4. metal enclosure wall according to claim 1, which is characterized in that the surface layer (1) and clathrum (2) are used around formation
In mounting semiconductor setting it is close-shaped；
The height of clathrum (2) is 2-4mm.
5. metal enclosure wall according to claim 1, which is characterized in that web thickness is 0.1- in the clathrum (2)
0.3mm。
6. metal enclosure wall according to claim 1, which is characterized in that web thickness is 0.15- in the clathrum (2)
0.25mm。
7. metal enclosure wall according to claim 1, which is characterized in that grid lines is interlaced in the clathrum (2) is in
The spacing of diamond shape, adjacent two parallel grids line is no more than 1.0mm.
8. metal enclosure wall according to claim 1, which is characterized in that adjacent two parallel grids line in the clathrum (2)
Spacing in 0.8mm or less.
9. metal enclosure wall according to claim 1, which is characterized in that the transition zone (3) with a thickness of 0.1-2 μm.
10. metal enclosure wall according to claim 1, which is characterized in that the transition zone (3) with a thickness of 0.3-1.5 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821375499.4U CN208722865U (en) | 2018-08-24 | 2018-08-24 | Metal enclosure wall |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821375499.4U CN208722865U (en) | 2018-08-24 | 2018-08-24 | Metal enclosure wall |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208722865U true CN208722865U (en) | 2019-04-09 |
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ID=65979409
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821375499.4U Active CN208722865U (en) | 2018-08-24 | 2018-08-24 | Metal enclosure wall |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110030965A (en) * | 2019-05-22 | 2019-07-19 | 宁波希澈机械科技有限公司 | A kind of automation high-rise building exposed wall facing brick intensity detection machine |
-
2018
- 2018-08-24 CN CN201821375499.4U patent/CN208722865U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110030965A (en) * | 2019-05-22 | 2019-07-19 | 宁波希澈机械科技有限公司 | A kind of automation high-rise building exposed wall facing brick intensity detection machine |
| CN110030965B (en) * | 2019-05-22 | 2019-11-19 | 东阳阿语机械科技有限公司 | A kind of automation high-rise building exposed wall facing brick intensity detection machine |
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