CN208707074U - A kind of semiconductor laser shaper - Google Patents
A kind of semiconductor laser shaper Download PDFInfo
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- CN208707074U CN208707074U CN201821561496.XU CN201821561496U CN208707074U CN 208707074 U CN208707074 U CN 208707074U CN 201821561496 U CN201821561496 U CN 201821561496U CN 208707074 U CN208707074 U CN 208707074U
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- prism
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- semiconductor laser
- creeping
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Abstract
The utility model discloses a kind of semiconductor laser shapers, including the semiconductor laser being set in sequence along optical path, fast axis collimation lens, slow axis collimation lens, half wave plate, polarization coupling prism, it creeps prism group, the laser of semiconductor laser output is after fast axis collimation lens and slow axis collimation lens sequentially collimate, after sequentially injecting half wave plate and polarization coupling prism, the spot size of its slow-axis direction is compressed, fast axis direction spot size remains unchanged, light after collapsible is by prism group of creeping, the light of the slow-axis direction of a part has moved on fast axis direction, the light of slow-axis direction is compressed again, the program can reduce the beam sizes of semiconductor laser slow-axis direction, reduce its beam parameter product, improve its beam quality.
Description
Technical field
The utility model relates to optical technical field, especially a kind of semiconductor laser shaper.
Background technique
Semiconductor laser have many advantages, such as electro-optical efficiency is high, small in size, power is big, high reliablity, thus swashing
The fields such as ligh-ranging, pump laser, material processing, biologic medical have broad application prospects.And the half of big light-emitting area
Since its spot size and the angle of divergence are larger, common beam shaping system is difficult efficiently big light-emitting area conductor laser
The beam quality of slow-axis direction light of semiconductor laser improve.Therefore, wider application is obtained, light must be just used
Beam shaping methods solve the problems, such as that beam quality is poor, power density is low.
Summary of the invention
The case where for the prior art, the purpose of this utility model is to provide a kind of implementations reliably, can be improved coupling
The semiconductor laser shaper of efficiency and beam quality.
In order to realize above-mentioned technical purpose, the technical solution adopted in the utility model are as follows:
A kind of semiconductor laser shaper comprising semiconductor laser, the fast axis collimation being set in sequence along optical path
Lens (FAC), slow axis collimation lens (SAC), half wave plate, polarization coupling prism and prism group of creeping, the semiconductor
Laser output laser sequentially through fast axis collimation lens and slow axis collimation lens collimation after, then sequentially inject half wave plate
With polarization coupling prism, the spot size of its slow-axis direction is made to be folded compression, fast axis direction spot size remains unchanged, and folds
After prism group of creeping, the light of a part of slow-axis direction moves on fast axis direction compressed light, the light warp of slow-axis direction
After collapsible, beam parameter product decline realizes that beam quality improves.
Further, the top edge of the half wave plate is located at the slow-axis direction sized central position of collimation laser, institute
It states and is rotated by 90 ° by the collimation laser polarization of half wave plate.
Further, the polarization coupling prism is the triangular prism and rhombic prism gluing composition of a square, institute
Stating triangular prism and being used for the right-angle surface height of incoming collimated laser is the half of incoming collimated laser slow-axis direction size.
Preferably, the height dimension on rhombic prism gluing inclined-plane and triangular prism are used for the right-angle surface of incident collimated light
Size is consistent.
Preferably, plating is equipped with high-reflecting film on the plane of symmetry on the rhombic prism and the inclined-plane of triangular prism gluing.
Further, the prism group of creeping is made of 2 or 2 or more prisms of creeping.
Preferably, the prism of creeping includes a plane of incidence and two reflectings surface, and two reflectings surface are the first reflection
Face and the second reflecting surface, wherein the first reflecting surface and the plane of incidence are at 45 degree of angles, and the vertical plane of the second reflecting surface and the plane of incidence is at 45
Spend angle.
Preferably, the first reflecting surface height of the prism of creeping and incident light fast axis direction width are in the same size, described
Creep prism plane of incidence width be incident light slow-axis direction width 1/n, wherein n=2,3,4 ....
Further, the longitudinal separation between the prism of creeping is equal to the width of incident light fast axis direction.
Using above-mentioned technical solution, the utility model compared with prior art, is had the beneficial effect that by two
/ mono- wave plate and polarization coupling prism compress the spot size of slow-axis direction, then by prism group of creeping, slow-axis direction
Light second compression again effectively reduces its beam parameter product to reduce the slow-axis direction size that semiconductor laser issues laser,
Improve its beam quality.
Detailed description of the invention
The utility model is further elaborated with reference to the accompanying drawings and detailed description:
Fig. 1 is the brief implementation structural schematic diagram of the utility model wherein embodiment；
Fig. 2 is that embodiment illustrated in fig. 1 corresponds to slow-axis direction hot spot variation simplified diagram at a, b, c；
Fig. 3 is the brief optical beam transformation figure of the prism of creeping of the utility model；
Fig. 4 is that another kind prism of creeping is formed a team optical beam transformation figure.
Specific embodiment
As shown in Figure 1, the utility model includes the semiconductor laser 101 being set in sequence along optical path, fast axis collimation lens
102, slow axis collimation lens 103, half wave plate 104, polarization coupling prism and prism group of creeping.
Wherein, the top edge of the half wave plate 104 is located at the slow-axis direction sized central position of collimation laser, institute
It states and is rotated by 90 ° by the collimation laser polarization of half wave plate；The polarization coupling prism is the triangular prism of a square
Mirror 105A and rhombic prism 105B gluing composition, right-angle surface height of the triangular prism 105A for incoming collimated laser are
The half of incoming collimated laser slow-axis direction size；Preferably, the height dimension and three on the rhombic prism 105B gluing inclined-plane
The right-angle surface size that angle prism 105A is used for incident collimated light is consistent；Preferably, the rhombic prism 105B and triangular prism
Plating is equipped with high-reflecting film on the plane of symmetry on the inclined-plane of 105A gluing.
The laser that semiconductor laser 101 exports is after fast axis collimation lens 102, and fast axis direction is collimated, slow axis side
To the angle of divergence it is constant, then using slow axis collimation lens 103 after, slow-axis direction is collimated, and the diverging of fast axis direction
Angle is constant, and the collimation laser after fast axle and slow-axis direction are collimated injects half wave plate 104, half wave plate 104
Optical axis and the angle of slow axis polarization direction p light be 45 degree, but since the top edge of half wave plate 104 is located at fast axis direction
The center of hot spot becomes s light so the polarization direction of the light of its lower half portion is rotated by 90 degree, top half
The polarization direction of light remains unchanged, and is still p light；And polarization coupling prism is by one piece of triangular prism 105A and one piece of rhombic prism
105B gluing forms, and upper bottom surface of the s light in rhombic prism 105B is totally reflected, and P light passes through triangular prism 105A and diamond shape
The cemented surface of prism 105B, so that two-beam has been fused the light output for foring cross polarization together, so that, collimation swashs
The spot size of light slow-axis direction is compressed by half (position a as shown in Figure 2 to the position b), and its fast axis direction size is still
So remain unchanged.
The light projected through polarization coupling prism injects prism group of creeping again, and as shown in connection with fig. 3, prism group of creeping is by climbing
Row prism 106A and the prism 106B that creeps are composed, and the spot center of incident light slow-axis direction, which is located to creep, prism 106A and climbs
The faying face center of row prism 106B, the prism 106A and prism 106B that creeps that creeps that the light of slow-axis direction is placed by front and back
Be divided into two, transmitted upwards after the first reflective surface of prism of creeping, then after the second reflective surface along perpendicular to
The direction of paper is propagated, and the half hot spot of last slow-axis direction has been shifted onto fast axis direction, to reduce slow-axis direction
Spot size reduces beam parameter product, improves beam quality.
Preferably, the prism of creeping includes a plane of incidence and two reflectings surface, and two reflectings surface are the first reflection
Face and the second reflecting surface, wherein the first reflecting surface and the plane of incidence are at 45 degree of angles, and the vertical plane of the second reflecting surface and the plane of incidence is at 45
Spend angle；Preferably, the first reflecting surface height of the prism of creeping and incident light fast axis direction width are in the same size, described to creep
The plane of incidence width of prism is the 1/n of incident light slow-axis direction width, wherein n=2,3,4 ....
Further, the longitudinal separation between the prism of creeping is equal to the width of incident light fast axis direction.
As another preferred embodiment for prism of creeping, the prism group of creeping can be creeped by 2 or 2 or more
Prism composition.
Fig. 4 shows another kind and creeps prism scheme, and principle is consistent with the prism group of creeping of Fig. 3, and which is not described herein again.
The above is the embodiments of the present invention, for the ordinary skill in the art, practical according to this
Novel introduction is descended to the mortal world in the situation for not departing from the principles of the present invention and spirit according to present utility model application the scope of the patents institute
Equivalent change, modification, the replacement and variant made, should all belong to the covering scope of the utility model.
Claims (9)
1. a kind of semiconductor laser shaper, it is characterised in that: it include the semiconductor laser being set in sequence along optical path,
Fast axis collimation lens, slow axis collimation lens, half wave plate, polarization coupling prism and prism group of creeping, the semiconductor swash
Light device output laser sequentially through fast axis collimation lens and slow axis collimation lens collimation after, then sequentially inject half wave plate and
Polarization coupling prism makes the spot size of its slow-axis direction be folded compression, and fast axis direction spot size remains unchanged, and folds pressure
After prism group of creeping, the light of a part of slow-axis direction moves on fast axis direction light after contracting, and the light of slow-axis direction is through rolling over
After laminating contracting, beam parameter product decline realizes that beam quality improves.
2. a kind of semiconductor laser shaper according to claim 1, it is characterised in that: the half wave plate
Top edge be located at the slow-axis direction sized central position of collimation laser, the collimation laser by half wave plate polarizes
It is rotated by 90 °.
3. a kind of semiconductor laser shaper according to claim 1, it is characterised in that: the polarization coupling rib
Mirror is that the triangular prism of a square and rhombic prism gluing composition, the triangular prism are used for the right angle of incoming collimated laser
Face height is the half of incoming collimated laser slow-axis direction size.
4. a kind of semiconductor laser shaper according to claim 3, it is characterised in that: the rhombic prism is glued
The height dimension on inclined-plane is consistent for the incident right-angle surface size of collimated light with triangular prism.
5. a kind of semiconductor laser shaper according to claim 3, it is characterised in that: the rhombic prism and three
Plating is equipped with high-reflecting film on the plane of symmetry on the inclined-plane of angle prism gluing.
6. a kind of semiconductor laser shaper according to claim 1, it is characterised in that: it is described creep prism group by
2 or 2 or more prism compositions of creeping.
7. a kind of semiconductor laser shaper according to claim 6, it is characterised in that: the prism packet of creeping
Include a plane of incidence and two reflectings surface, two reflectings surface are the first reflecting surface and the second reflecting surface, wherein the first reflecting surface with
The plane of incidence is at 45 degree of angles, and the vertical plane of the second reflecting surface and the plane of incidence is at 45 degree of angles.
8. a kind of semiconductor laser shaper according to claim 7, it is characterised in that: the of the prism of creeping
One reflecting surface height and incident light fast axis direction width are in the same size, and the plane of incidence width of the prism of creeping is incident light slow axis
The 1/n of direction width, wherein n=2,3,4 ....
9. a kind of semiconductor laser shaper according to claim 1, it is characterised in that: between the prism of creeping
Longitudinal separation be equal to incident light fast axis direction width.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821561496.XU CN208707074U (en) | 2018-09-25 | 2018-09-25 | A kind of semiconductor laser shaper |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821561496.XU CN208707074U (en) | 2018-09-25 | 2018-09-25 | A kind of semiconductor laser shaper |
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| Publication Number | Publication Date |
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| CN208707074U true CN208707074U (en) | 2019-04-05 |
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ID=65947601
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| Application Number | Title | Priority Date | Filing Date |
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| CN201821561496.XU Active CN208707074U (en) | 2018-09-25 | 2018-09-25 | A kind of semiconductor laser shaper |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115173219A (en) * | 2022-08-15 | 2022-10-11 | 北京工业大学 | High-brightness semiconductor laser module |
| CN115657075A (en) * | 2022-05-25 | 2023-01-31 | 北京一径科技有限公司 | Beam combining device and manufacturing method thereof |
-
2018
- 2018-09-25 CN CN201821561496.XU patent/CN208707074U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115657075A (en) * | 2022-05-25 | 2023-01-31 | 北京一径科技有限公司 | Beam combining device and manufacturing method thereof |
| CN115173219A (en) * | 2022-08-15 | 2022-10-11 | 北京工业大学 | High-brightness semiconductor laser module |
| CN115173219B (en) * | 2022-08-15 | 2024-04-12 | 北京工业大学 | High-brightness semiconductor laser module |
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Address after: 350100 floor 5, building 19, phase II, innovation park, No. 7, middle wulongjiang Avenue, Shangjie Town, Minhou County, Fuzhou City, Fujian Province Patentee after: Fujian Haichuang Photoelectric Technology Co.,Ltd. Address before: 350005 floor 27, Chuangye building, Haixi high tech Industrial Park, high tech Zone, Minhou County, Fuzhou City, Fujian Province Patentee before: FUJIAN HAICHUANG PHOTOELECTRIC CO.,LTD. |
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