CN208657154U - For being attached the flexible multilayer substrate of light-emitting semiconductor device - Google Patents
For being attached the flexible multilayer substrate of light-emitting semiconductor device Download PDFInfo
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- CN208657154U CN208657154U CN201690000578.XU CN201690000578U CN208657154U CN 208657154 U CN208657154 U CN 208657154U CN 201690000578 U CN201690000578 U CN 201690000578U CN 208657154 U CN208657154 U CN 208657154U
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- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims description 23
- 238000002955 isolation Methods 0.000 claims description 13
- 230000005611 electricity Effects 0.000 claims description 5
- 239000011230 binding agent Substances 0.000 claims description 4
- 238000011049 filling Methods 0.000 claims description 4
- 239000007767 bonding agent Substances 0.000 claims description 3
- 239000011888 foil Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 16
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 15
- 239000002585 base Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical class OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229920001646 UPILEX Polymers 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000012286 potassium permanganate Substances 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000005439 thermosphere Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- JVERADGGGBYHNP-UHFFFAOYSA-N 5-phenylbenzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C=2C=CC=CC=2)=C1C(O)=O JVERADGGGBYHNP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 244000118350 Andrographis paniculata Species 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- 239000004831 Hot glue Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- -1 alkali metal salt Chemical class 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011469 building brick Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001548 drop coating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229940031098 ethanolamine Drugs 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000010237 hybrid technique Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000006072 paste Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920005596 polymer binder Polymers 0.000 description 1
- 239000002491 polymer binding agent Substances 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004590 silicone sealant Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0209—External configuration of printed circuit board adapted for heat dissipation, e.g. lay-out of conductors, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0207—Cooling of mounted components using internal conductor planes parallel to the surface for thermal conduction, e.g. power planes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/111—Pads for surface mounting, e.g. lay-out
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/189—Printed circuits structurally associated with non-printed electric components characterised by the use of a flexible or folded printed circuit
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0162—Silicon containing polymer, e.g. silicone
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0209—Inorganic, non-metallic particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/09681—Mesh conductors, e.g. as a ground plane
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09827—Tapered, e.g. tapered hole, via or groove
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Structure Of Printed Boards (AREA)
Abstract
The utility model provides the flexible multilayer substrate for being attached light-emitting semiconductor device, which includes: the first dielectric layer；Circuit layer on first dielectric layer；The first heat-conducting layer on the circuit layer；It is arranged on first heat-conducting layer and has the discontinuous metal supporting layer of multiple openings across it；With the second heat-conducting layer being located on the supporting layer.The flexible multilayer substrate further includes the multiple conduction through-holes for extending through first dielectric layer, so that the circuit layer is connected to multiple conduction through-hole.First heat-conducting layer contacts in the opening with the second heat-conducting layer.
Description
Technical field
This application involves a kind of for being attached the flexible multilayer substrate of light-emitting semiconductor device.
Background technique
Light-emitting semiconductor device (LESD) including light emitting diode (LED) and laser diode can produce greatly at work
Calorimetric, these heats must be managed correctly, and otherwise the performance of these devices may be restricted or become inefficient.Generally
For, if heat does not obtain correct management, LESD is easy heat because generating in device and in exterior lighting application feelings
Under condition from sunlight heat accumulation and be damaged.Excessive heat localization can be such that such as sealant of material used in LESD deteriorates.
When LESD is attached to flexible circuit laminate (it may also comprise other electronic building bricks), heat dissipation problems are greatly increased.
High performance-price ratio heat management for surface mount (SM) LESD is the significant challenge that current electronics industry faces.SM
LESD must have die-level heat management solution and driving circuit heat management solution.Traditional SM LESD encapsulation
Driving circuit is placed on FR4 printed circuit board (PCB) or metal core PCB (MCPCB) by solution.In general, these bases
Plate may each comprise the relatively thick dielectric layer that can reduce the heat dissipation ability of gained device.In some cases, flexible electrical
Road is used for LESD.These flexible circuits, which are encapsulated, is attached to aluminium radiator usually using double-sided adhesive or hot melt adhesive.However, these are bonded
Agent can increase the thermal impedance of encapsulation, and reduce the efficiency of LESD.Therefore, it is necessary to the flexible multi-layered bases of lasting improvement LESD encapsulation
The design of plate is to improve its heat dissipating properties energy.
Utility model content
First embodiment according to the present utility model, for being attached the flexible multilayer substrate packet of light-emitting semiconductor device
It includes: the first dielectric layer having the first face and the second face；Circuit layer on second face of the first dielectric layer is set；Back to
The first heat-conducting layer on circuit layer is arranged in first dielectric layer；Discontinuous gold on first heat-conducting layer is set back to circuit layer
Belong to supporting layer；With the second heat-conducting layer being arranged on supporting layer back to the first heat-conducting layer.Flexible multilayer substrate further includes from first
First face of dielectric layer extends to multiple conduction through-holes in the second face, and wherein circuit layer is connected to multiple conduction through-holes.Do not connect
Continuous metal supporting layer is electrically continuous, and the aperture array including extending through discontinuous metal supporting layer, so that second leads
Thermosphere is contacted with the first heat-conducting layer in the opening by discontinuous metal supporting layer.
In the second illustrative aspect, the flexible multilayer substrate for being attached light-emitting semiconductor device includes: with the first electricity
The flex circuit of dielectric layer, wherein the first dielectric layer has the first face and the second face；From the first of the first dielectric layer
Face extends to multiple conduction through-holes in the second face: and the circuit layer being arranged on the second face of the first dielectric layer；And by structure
It causes protection circuit layer and flex circuit is attached to the isolation structure of assisting base plate.Isolation structure includes: first thermally conductive
Layer；The discontinuous metal supporting layer on the first heat-conducting layer is set back to circuit layer, wherein discontinuous metal supporting layer is to be electrically connected
Continuous, and the aperture array including extending through discontinuous metal supporting layer；It is arranged with back to the first heat-conducting layer in supporting layer
On the second heat-conducting layer, wherein the second heat-conducting layer is contacted with the first heat-conducting layer in the opening by discontinuous metal supporting layer.
The above-mentioned utility model content of the utility model is not intended to the embodiment party of each illustration of description the utility model
Case or each specific embodiment.Attached drawing and subsequent detailed description more particularly illustrate these embodiments.
Detailed description of the invention
The utility model is further described with reference to the accompanying drawings, in which:
Fig. 1 is the flexible multi-layered base for being used to be attached light-emitting semiconductor device according to an embodiment of the utility model
The schematic diagram of plate.
Although the utility model may be modified such that various modifications form and alternative form, its concrete form in the accompanying drawings with
Example way shows and will be described in detail.Described spy is limited the invention to it will be appreciated, however, that being not intended to
Determine embodiment.On the contrary, its object is to cover to fall into the scope of the utility model as defined by the following appended claims
Within all modifications, equivalent form and interchangeable scheme.
Specific embodiment
In the following description, with reference to the one group of attached drawing formed part of this specification, wherein being illustrated with
Mode show several specific embodiments.It should be appreciated that can in the case where not departing from the scope of the utility model or essence
Imagine and implements other embodiments.Therefore, following specific embodiments are not considered to have restrictive sense.
Unless otherwise specified, all expression characteristic sizes, amount and object used in specification and claims
The number of reason characteristic should be understood as being modified by term " about " in all cases.Therefore, unless indicated to the contrary, otherwise exist
The numerical parameter listed in description above and the appended claims is approximation, these approximations can be according to this field
Technical staff seeks the desired characteristic obtained using teachings disclosed herein and changes.
Unless otherwise specified, term " coating ", " coating ", " coated " etc. are not limited to certain types of application side
Method spraying, dip-coating, painting etc. of overflowing, and can refer to the material deposited by any method for being suitable for the material, the method packet
Include sedimentation such as vapour deposition process, plating method, rubbing method etc..
Term " LESD " means light-emitting semiconductor device, including one or more light-emitting diode assemblies and one or more
Laser diode device；LESD can be exposed LES die configuration, fully enclosed LES construction, or including more than bare die but less
In the intermediate LES construction of all components of complete LES encapsulation, so that term LES and LESD are used interchangeably, and refer to one
Or all different LES constructions；" discrete LESD " typically refers to one or more " encapsulation ", and is ready to be connected to electricity
The LESD run after source, such as driving circuit, including MCPCB, MIS etc..Suitable for making in the embodiments of the present invention
The example of discrete LESD is to be purchased from German Osram Opto Semiconductors GmbH (OSRAM Opto
Semiconductors GmbH, Germany) Golden DRAGON LED；It is purchased from U.S. Philips lumen Lighting Inc
The LUXEON LED of (Philips Lumileds Lighting Company, USA)；It is purchased from Creat Company, the U.S. (Cree
Inc., USA) XLAMP LED and discrete LESD as described herein and similar device.
" flexible multilayer substrate " means the flexible article for having circuit that one or more discrete LESD could attach to, the product
For and its LESD being attached heat management and driving circuit are provided；The commercially available substitute of the support product of the utility model may include
Metal-core printed circuit board (MCPCB), metal-insulator substrate (MIS), Bergquist thermally conductive sheet and COOLAM hot substrate.
As described herein, the exemplary implementation scheme of the utility model can be related to include the flexible multi-layered of filling hole with metal
Substrate, wherein through-hole extends through always the first dielectric layer, to provide across the conductive and thermally conductive logical of the first dielectric layer
Road.Example flexible multilager base plate is the single metal layer design that can be used in single LESD or multiple LESD encapsulation.
Fig. 1 shows the example flexible multilager base plate for LESD package application.Flexible multilayer substrate 100 includes circuit
Part 105 and the isolation structure 140 being arranged on circuit part.Circuit part includes having the first face 111 and the second face 112
First dielectric layer 110, the second face have multiple biographies that the first dielectric layer to the second face 112 is extended through from the first face 111
Via hole 120 and the circuit layer 130 being arranged on the second face of the first dielectric layer, circuit layer includes pattern conductive feature knot
Structure or trace 132.Isolation structure 140 can be arranged on circuit layer back to the first dielectric layer.Separation layer protection circuit layer simultaneously makes
Flexible multilayer substrate can be attached to assisting base plate, such as radiator or cooling fin 180.
Circuit layer 130 can be by the copper, silver-plated copper, gold plated copper, the gold or other that are formed on the second face of the first dielectric layer
Suitable material is formed.Circuit layer can by conventional additive process, subtract into technique or hybrid technique is formed.
Isolation structure 140 includes the first heat-conducting layer 150, the discontinuous metal supporting layer 160 being arranged on the first heat-conducting layer
With the second heat-conducting layer 170 being arranged on supporting layer back to the first heat-conducting layer.Isolation structure 140 is attached to circuit part 105, makes
It is adjacent with circuit layer to obtain the first heat-conducting layer.Discontinuous metal supporting layer is electrically continuous, and including extending through metal support
The aperture array of layer, so that the second heat-conducting layer is contacted with the first heat-conducting layer in the opening by discontinuous metal supporting layer.
LESD 190 can pass through known tube core adhesive method such as eutectic, soldering, electroconductive binder, welding and fusion
Bonding, is directly or indirectly attached to the top surface of the through-hole 120 on the first face 111 of the first dielectric layer 110.At one
Illustrative aspect, LESD 190 include multiple contacts 192 on the bottom side of LESD, and each contact in plurality of contact is direct
It is bonded to the domed surface of the conduction through hole plug across the setting of the first dielectric layer in through-holes.Through-hole 120 typically at least mentions
For being electrically connected with circuit layer 130, and thermal connection can be optionally provided so as to heat dissipation.In some embodiments, may be used
Distribution conduction heat sealable agent (not shown) is between LESD and the first dielectric layer and conduction through-hole to enhance the heat carried out from LESD
Transfer.
In an illustrative aspect, the first dielectric layer 110 is poly- with a thickness of the flexibility of about 0.5 mil to about 5.0 mils
Compound film or other suitable materials.Suitable material suitable for the first dielectric layer includes polyester, polycarbonate, polymerizable mesogenic
Object and polyimides.It is preferred that polyimides.Suitable polyimides includes by trade name KAPTON purchased from E.I.Du Pont Company
(DuPont), by trade name APICAL purchased from clock Huade state company (Kaneka Texas corporation), with trade name
SKC Kolon PI purchased from SKC Kolon PI Corp. (SKC Kolon PI Inc.) and with trade name UPILEX and
UPISEL is purchased from those of Ube Nitto Kasei Co., Ltd (Ube-Nitto Kasei Industries, Japan).
Ube Nitto Kasei Co (Ube- is most preferably purchased from all with trade name UPILEX S, UPILEX SN and UPISEL VT
Nitto Kasei Industries) polyimides.These polyimides are by such as biphenyltetracarboxylic dianhydride (BBDA) and benzene
The monomer of diamines (PDA) is made.In at least one embodiment, the thickness of dielectric layer is preferably 50 microns or smaller, but
It can be any thickness of suitable specific application.
It can be first in the one side of the first dielectric layer coated with conductive layer.Conductive layer can be formed for by subtracting into erosion
Carving technology is mounted in the driving circuit of the LESD in flexible multilayer substrate.Alternatively, can be set in the one side of the first dielectric layer
Set Photoimageable layer.It Photoimageable layer patternable and can be formed form driving circuit by addition electroplating technology
On the first dielectric layer.Conductive layer can be any suitable material, including copper, gold, ni au and stainless steel, but usually copper.
Conductive layer can apply in any suitable manner, such as sputter, be electroplated, chemical vapor deposition, or can be laminated to dielectric layer
Or it is attached with adhesive.
Through-hole 120 extends through dielectric layer 110, and can be any suitable shape, such as round, ellipse, square
Shape etc..Any suitable method such as chemical etching, plasma etching, focused ion beam etching, laser ablation, pressure can be used
Print, microreplicated, injection molding and punching form through-hole on the first dielectric layer.Preferable chemical etching in some embodiments.
Any suitable etchant can be used, and can be changed according to the type of dielectric layer material.Suitable etchant can wrap
It includes: alkali metal salt, such as potassium hydroxide；Alkali metal containing one or both of solubilizer such as amine and alcohol (such as ethylene glycol)
Salt.The chemical etchant for being suitble to some embodiments of the utility model includes KOH/ ethanol amine/ethylene glycol etchant, such as
Those of detailed description in U.S. Patent Publication 2007-0120089-A1, the patent disclosure is incorporated herein by reference.
The other chemical etchants of some embodiments for being suitble to the utility model include KOH/ glycine etchant, such as jointly not
Those of detailed description in U.S. Patent Publication 2013-0207031 certainly, the patent disclosure is incorporated herein by reference.
After etching, using alkaline KOH/ potassium permanganate (PPM) solution (for example, about 0.7 weight % to about 1.0 weight %KOH peace treaties
3 weight %KMnO4Solution) handle dielectric layer.
Through-hole 120 can be formed with the side wall of inclination or angulation, so that each through-hole 120 passes through the first of the first dielectric layer
The first width at face and the second width at the second face of the first dielectric layer characterize.For the purpose of present patent application,
Sloped sidewall refers to the side wall for being not orthogonal to the horizontal plane of the first dielectric layer.In an illustrative aspect, the first width can be greater than
Second width.The side wall of through-hole with 20 degree to about 80 degree of angle, preferably with about 20 ° to about 45 ° of angle, more preferably with about 25 ° extremely
The surface in second face of about 35 ° of the angle far from the first dielectric layer tilts.
Compared to the through-hole with 90 ° of side walls, the sloped sidewall of through-hole 120 can accommodate more conductive materials.For example, through-hole
The opening of conductive features 132 on second face 112 of neighbouring dielectric layer 110 is usually by the conductive features
The limitation of size；However, by using inclined through-hole side wall, at through-hole opposite end (i.e. at the first face 111 of dielectric layer)
Opening can be amplified to optimum size so that through-hole can accommodate a greater amount of conductive materials (shift more heats from LESD),
And the conductive material of the opening, which has, (can such as be attached to dielectric layer and biography with thermal transfer material or heat-absorbing material
Lead the thermally conductive Embedding Material or metal substrate of material filling through-hole) large surface area that more effectively connects.In addition, through-hole compared with
High surface area reduces the tolerance that LESD is placed in flexible multilayer substrate 100.Finally, the inclination of through-hole wall helps welding
Solder is kept during connecing reflux technique, to prevent solder from flowing to neighbouring pad.
Each through-hole 120 includes the conductive material being disposed therein.Conductive material forms the through-hole for being substantially filled with through-hole
Plug 125.Through hole plug can extend to from the second face (connecting circuit layer 130 here) of the first dielectric layer and be located near or at first
The position in the first face of dielectric layer, and the domed surface that can have the first face of neighbouring first dielectric layer to be arranged.It is logical
Stopple can be described generally as having slightly domed surface close to the first face of the first dielectric layer or slightly (i.e. center is bowl-type
Spill) butt (the cone solid between two parallel planes) shape metallicity structure.In an illustrative aspect, vault
The a part on top shape surface can exceed the plane as defined in the surface in the first face of the first dielectric layer.
Conducting through hole plug 125 can be by high temperature tin-lead solder, electro-coppering, electronickelling, or meets selected using electric conductivity and machine
Another conductive material that tool requires is formed.In an illustrative aspect, conducting through hole plug can be by the way that metal to be situated between from the first electricity
First face addition of matter layer is electroplated onto opening and is formed.Alternatively, solder reflow process can be used to form conduction through hole plug.Conduction is logical
Hole makes LESD 190 be reliably electrically connected to the circuit layer 130 of flexible multilayer substrate.
It can be flexible thermal diffusion material in the discontinuous metal supporting layer of an illustrative aspect, isolation structure, such as beat
Metal foil, the metal mesh sheet in hole etc..In the supporting layer being made of flexible thermal diffusion material, heat can horizontal proliferation so that not
There is bigger heat transfer area on second face of continuous metal supporting layer, this can increase and improve and discontinuous metal supporting layer
The whole hot property of relevant heat transfer efficiency and flexible multilayer substrate.Depending on specific embodiment, heat can pass through Z-direction
On conduction be transferred to the second heat-conducting layer from supporting layer.
Flexible thermal diffusion material can refer to and including the flexible stamped aluminium and/or flexibility for being equal to or more than 20 mil thicks
The various metals material of punching press copper sheet equal to or more than 15 mil thicks etc..
In an illustrative aspect, discontinuous metal supporting layer is punching, so that it is with continuous thermally conductive and conductive
Metallic matrix part, the body portion have the aperture array of the rule across its setting.First heat-conducting layer and the second heat-conducting layer
It can directly be contacted by the opening in discontinuous metal supporting layer.It is formed in the first heat-conducting layer and heat-conducting layer by identical Heat Conduction Material
An illustrative aspect, the hot interface between the first heat-conducting layer and heat-conducting layer can be being eliminated in the opening in supporting layer, this can
Improve the heat transfer performance with the flexible multilayer substrate of aperturing support layer.
First heat-conducting layer and/or the second heat-conducting layer can be any suitable insulation boundary material.In general, hot interface material
Material includes the filler for the thermally conductive, electrically non-conductive being arranged in polymeric binder.Exemplary heat filling may include boron nitride, oxygen
Change aluminium, magnesia, crystalline silica, silicon nitride, aluminium nitride, silicon carbide, zinc oxide etc., and exemplary polymer binder can
Including silicone sealants, epoxy adhesive, acroleic acid binding agent etc..Heat-conducting layer can be with liquid, paste, gel, solid
Etc. forms be applied to flexible multilayer substrate.The appropriate method for applying thermal interfacial material depends on the characteristic of specific thermal interfacial material,
But including being accurately coated with, it is drop coating, silk-screen printing, laminated etc..
In an alternative embodiment, isolation structure preform and can be laminated to soft with segmentation or continuous roll-to-roll process
Property circuit structure.The appropriate method of cure curable thermal interfacial material includes UV solidification, heat cure etc..
In an illustrative aspect, the first heat-conducting layer can be that can be used in isolation structure being bonded to flex circuit
Hot adhesion heat-conductive bonding agent on circuit layer.On the other hand, the second heat-conducting layer can be that can be used in flexible multilayer substrate
It is bonded to the hot adhesion heat-conductive bonding agent of the pedestal of cooling fin or other radiators.In an alternative embodiment, first is led
Thermosphere and/or the second heat-conducting layer not necessarily have bond properties, can be used auxiliary heat conduction adhesive that will be isolated in this case
Structure bond is bonded to cooling fin or other heat dissipations to the flex circuit of flexible multilayer substrate and/or by flexible multilayer substrate
Device.
Flexible multilayer substrate can provide following benefit when being used for LESD package application.The flexible multi-layered base of the utility model
Plate can reduce the whole heat resistance of discrete light-emitting device.The through-hole of the utility model comprising conductive material provides excellent Z axis
Thermal conductivity.The size of adjustable through-hole and the porosity of the discontinuous metal supporting layer of isolation structure are to provide optimal thermal resistance values.
Since flexible multilayer substrate is single metal layer structure, compared to double-metal layer substrate, flexible multilayer substrate, which can provide, to be suitable for
Relatively inexpensive substrate of the LESD package application without damaging hot property.In addition, the flexible multilayer substrate of the utility model and LESD can
Eliminate cost relevant to the tradition bottom surface LED attachment.The flexible LESD of the utility model can be the high power of current and future
LESD construction provides steady high performance-price ratio heat management solution.
For the utility model those skilled in the art after the specification for reading the utility model, the utility model can
Applicable various modifications form, equivalent processes and numerous structures will become obvious.
Claims (10)
1. a kind of for being attached the flexible multilayer substrate of light-emitting semiconductor device, which is characterized in that the flexible multilayer substrate packet
It includes:
First dielectric layer, first dielectric layer have the first face and the second face；
Multiple conduction through-holes, the multiple conduction through-hole extend to described second from first face of first dielectric layer
Face；
Circuit layer, the circuit layer is arranged on second face of first dielectric layer to be connected with the multiple conduction through-hole
It is logical；
First heat-conducting layer, first heat-conducting layer are arranged on the circuit layer back to first dielectric layer；
Discontinuous metal supporting layer, the discontinuous metal supporting layer are arranged back to the circuit layer in first heat-conducting layer
On, wherein the discontinuous metal supporting layer is electrically continuous and including extending through opening for the discontinuous metal supporting layer
Mouth array；With
Second heat-conducting layer, second heat-conducting layer are arranged on the supporting layer back to first heat-conducting layer, wherein described the
Two heat-conducting layers are contacted with first heat-conducting layer in said opening by the discontinuous metal supporting layer.
2. flexible multilayer substrate according to claim 1, wherein the through-hole filled with electro-coppering to form through hole plug,
Described in through hole plug there is the domed surface that extends above first face of first dielectric layer.
3. flexible multilayer substrate according to claim 1, wherein first heat-conducting layer includes being arranged in a binder
Heat filling.
4. flexible multilayer substrate according to claim 1, wherein first heat-conducting layer is hot adhesion heat-conductive bonding agent.
5. flexible multilayer substrate according to claim 1, wherein first heat-conducting layer and second heat-conducting layer have
Identical composition.
6. flexible multilayer substrate according to claim 2, wherein the light-emitting semiconductor device is situated between adjacent to first electricity
First face of matter layer is attached to flexible multilayer substrate.
7. flexible multilayer substrate according to claim 2, wherein the light-emitting semiconductor device is in the emitting semiconductor
It include multiple contacts on the bottom surface of device, wherein each contact in the multiple contact is bonded directly to across first electricity
The domed surface of the conduction through hole plug of dielectric layer setting in the through hole.
8. flexible multilayer substrate according to claim 1, wherein the discontinuous metal supporting layer, which is selected from, serves as intermediate dissipate
One of the perforated metal foil of hot device and metal mesh sheet.
9. flexible multilayer substrate according to claim 1, wherein first heat-conducting layer and second heat-conducting layer are phase
Same material, and there is no heat in the opening in the supporting layer between first heat-conducting layer and second heat-conducting layer
Interface.
10. a kind of for being attached the flexible multilayer substrate of light-emitting semiconductor device, which is characterized in that the flexible multilayer substrate packet
It includes:
Flex circuit with the first dielectric layer, first dielectric layer have the first face and the second face；Multiple biographies
Via hole, the multiple conduction through-hole extend to second face from first face of first dielectric layer；And circuit
Layer, the circuit layer are arranged on second face of first dielectric layer: and
Isolation structure, the isolation structure are configured to protect the circuit layer and the flex circuit are attached to auxiliary
Substrate, wherein the isolation structure includes: the first heat-conducting layer；Discontinuous metal supporting layer, the discontinuous metal supporting layer back
To the circuit layer be arranged on first heat-conducting layer, wherein the discontinuous metal supporting layer be it is electrically continuous and including
Extend through the aperture array of the discontinuous metal supporting layer；With the second heat-conducting layer, second heat-conducting layer is back to described
One heat-conducting layer is arranged on the supporting layer, wherein second heat-conducting layer is opened by the discontinuous metal supporting layer described
It is contacted in mouthful with first heat-conducting layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562135803P | 2015-03-20 | 2015-03-20 | |
| US62/135,803 | 2015-03-20 | ||
| PCT/US2016/018401 WO2016153644A1 (en) | 2015-03-20 | 2016-02-18 | Multilayer substrate for a light emitting semi-conductor device package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208657154U true CN208657154U (en) | 2019-03-26 |
Family
ID=55527637
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201690000578.XU Expired - Fee Related CN208657154U (en) | 2015-03-20 | 2016-02-18 | For being attached the flexible multilayer substrate of light-emitting semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20180084635A1 (en) |
| CN (1) | CN208657154U (en) |
| TW (1) | TW201705825A (en) |
| WO (1) | WO2016153644A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111836488A (en) * | 2019-04-18 | 2020-10-27 | 苹果公司 | Thin coating of support plate |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20190214328A1 (en) * | 2018-01-10 | 2019-07-11 | Feras Eid | Stacked die architectures with improved thermal management |
| US11350526B2 (en) * | 2019-09-27 | 2022-05-31 | Ge Aviation Systems, Llc | Reversible electronic card and method of implementation thereof |
| US11037857B1 (en) * | 2019-12-12 | 2021-06-15 | Amulaire Thermal Technology, Inc. | IGBT module with heat dissipation structure having copper layers of different thicknesses |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4446188A (en) * | 1979-12-20 | 1984-05-01 | The Mica Corporation | Multi-layered circuit board |
| US5035939A (en) * | 1989-08-31 | 1991-07-30 | David Sarnoff Research Center, Inc. | Manufacture of printed circuit boards |
| US6956739B2 (en) * | 2002-10-29 | 2005-10-18 | Parker-Hannifin Corporation | High temperature stable thermal interface material |
| US7012017B2 (en) * | 2004-01-29 | 2006-03-14 | 3M Innovative Properties Company | Partially etched dielectric film with conductive features |
| US20070120089A1 (en) | 2005-11-28 | 2007-05-31 | 3M Innovative Properties Company | Polymer etchant and method of using same |
| JP2009135184A (en) * | 2007-11-29 | 2009-06-18 | Shinko Electric Ind Co Ltd | Wiring substrate and manufacturing method thereof |
| JP5463205B2 (en) * | 2010-05-27 | 2014-04-09 | 日本メクトロン株式会社 | Flexible circuit board |
| KR20130132828A (en) | 2010-11-03 | 2013-12-05 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | Polymer etchant and method of using same |
| WO2012112873A2 (en) * | 2011-02-18 | 2012-08-23 | 3M Innovative Properties Company | Flexible light emitting semiconductor device |
| US8799707B2 (en) * | 2011-06-28 | 2014-08-05 | Mitsubishi Heavy Industries, Ltd. | Redundant system |
| KR20130033868A (en) * | 2011-09-27 | 2013-04-04 | 삼성전기주식회사 | Package substrate with mesh pattern and method for manufacturing thereof |
| JP5727076B2 (en) * | 2013-06-27 | 2015-06-03 | キヤノン・コンポーネンツ株式会社 | Flexible printed wiring board, flexible circuit board, and electronic device using the same |
| DE102013212524A1 (en) * | 2013-06-27 | 2015-01-15 | Behr Gmbh & Co. Kg | Thermoelectric temperature control unit |
-
2016
- 2016-02-18 WO PCT/US2016/018401 patent/WO2016153644A1/en active Application Filing
- 2016-02-18 CN CN201690000578.XU patent/CN208657154U/en not_active Expired - Fee Related
- 2016-02-18 US US15/554,251 patent/US20180084635A1/en not_active Abandoned
- 2016-02-26 TW TW105105989A patent/TW201705825A/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111836488A (en) * | 2019-04-18 | 2020-10-27 | 苹果公司 | Thin coating of support plate |
| US11898808B2 (en) | 2019-04-18 | 2024-02-13 | Apple Inc. | Support plate thin cladding |
Also Published As
| Publication number | Publication date |
|---|---|
| US20180084635A1 (en) | 2018-03-22 |
| WO2016153644A1 (en) | 2016-09-29 |
| TW201705825A (en) | 2017-02-01 |
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Granted publication date: 20190326 |