CN208656153U - State pulse forming line based on ceramic dielectric - Google Patents
State pulse forming line based on ceramic dielectric Download PDFInfo
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- CN208656153U CN208656153U CN201821557992.8U CN201821557992U CN208656153U CN 208656153 U CN208656153 U CN 208656153U CN 201821557992 U CN201821557992 U CN 201821557992U CN 208656153 U CN208656153 U CN 208656153U
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- copper
- copper sheet
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Abstract
A kind of state pulse forming line based on ceramic dielectric is provided, including copper component, copper sheet and metallized ceramic plate, the copper component and copper sheet are respectively arranged in the upper plane and lower plane of metallized ceramic plate, and copper component and copper sheet are linked together with the weldering of metallized ceramic plate.The fixed form that the utility model is welded using copper component and copper sheet and metallized ceramic plate, improve the bonding strength of copper component and copper sheet and metallized ceramic plate, constitute densification, the fixed pulse of miniaturization forms line, structure is simple, easy to process, dielectric constant with higher, dielectric loss is low, resistance to breakdown strength is high, use value with higher.
Description
Technical field
The utility model belongs to pulse-forming line technical field, and in particular to a kind of solid state pulse shape based on ceramic dielectric
At line.
Background technique
The high-voltage pulse of capacitive character energy storage forms line as High-Power Microwave, the driving source of high power laser light and X-ray machine,
High pulse power technology field is widely used.Traditional liquid energy-accumulating medium transformer oil dielectric constant is too low, bears
Loading capability is weak;Although the dielectric constant of deionized water is met the requirements, but need a set of deionized water process units come produce from
Sub- water, and deionized water is maintained to generate higher resistivity, miniaturization and densification that pulse power forms line are seriously affected,
With the demand of the miniaturization of pulse power supply, the development of solid-state energy-accumulating medium pulse-forming line is paid more and more attention, and therefore, is had
Necessity improves.
Utility model content
The technical problem solved by the utility model is:to provide a kind of state pulse forming lines based on ceramic dielectric, using copper
The fixed form of component and the welding of copper sheet and metallized ceramic plate, improves the connection of copper component and copper sheet and metallized ceramic plate
Intensity constitutes the fixed pulse formation line of densification, miniaturization, and structure is simple, easy to process, dielectric constant with higher,
Dielectric loss is low, and resistance to breakdown strength is high, use value with higher.
The technical solution adopted in the utility model: the state pulse forming line based on ceramic dielectric, including copper component, copper sheet
With metallized ceramic plate, the copper component and copper sheet are respectively arranged in the upper plane and lower plane of metallized ceramic plate, and copper structure
Part and copper sheet are linked together with the weldering of metallized ceramic plate.
Wherein, the metallized ceramic plate includes ceramic wafer, molybdenum manganese metal layer and nickel layer, on the ceramic wafer plane and
Lower plane is equipped with molybdenum manganese metal layer identical with size with the shape of copper component and copper sheet and molybdenum manganese metal layer surface respectively
It is coated with nickel layer, the copper component is covered on ceramic wafer on the nickel layer of plane and on copper component and ceramic wafer between the nickel layer of plane
Equipped with solder, the copper sheet is covered on the nickel layer of ceramic wafer lower plane and is equipped between copper sheet and the nickel layer of ceramic wafer lower plane
Solder, the metallized ceramic plate, copper component, copper sheet and solder be put into copper component in vacuum brazing equipment simultaneously after heating and
Copper sheet welds the upper plane and lower plane for being connected in metallized ceramic plate respectively.
Further, the molybdenum manganese metal layer with a thickness of 20~40 μm, the nickel layer with a thickness of 3~6 μm.
Further, the ceramic wafer is circular sheet-like structures, and the diameter of the ceramic wafer is 170~180mm and ceramics
Plate with a thickness of 8~12mm.
Further, the copper component in parallel construction and copper component by more copper bars disposed in parallel in adjacent copper bar one
The wavelike structure that end is formed after being connected by arc transition, the width of the copper bar are identical as the distance between adjacent copper bar
For 6~8mm and copper bar with a thickness of 1.5~2mm.
Further, the copper component and copper sheet are that oxygenless copper material is made, the copper sheet with a thickness of 1.5~2mm
And the diameter of copper sheet is 145~150mm.
The utility model compared with prior art the advantages of:
1, the fixed form of the technical program copper component and the welding of copper sheet and metallized ceramic plate, improves copper component and copper
The bonding strength of piece and metallized ceramic plate, it is easy to accomplish;
2, the technical program uses the ceramic wafer with good electrical properties for medium, and imparting state pulse forming line has
Higher dielectric constant, dielectric constant is adjustable, and dielectric loss is low, and resistance to breakdown strength is high, and dielectric properties high frequency stability is good;
3, state pulse forming line made of the technical program has miniaturization, densification, and structure is simple, easy to process
The characteristics of.
Detailed description of the invention
FIG. 1 is a schematic structural view of the utility model;
Fig. 2 is A-A cross-sectional view in Fig. 1;
Fig. 3 is partial enlargement diagram at I in Fig. 2.
Specific embodiment
1-3 describes an embodiment of the present invention with reference to the accompanying drawing.
State pulse forming line based on ceramic dielectric, including copper component 1, copper sheet 3 and metallized ceramic plate 2, the copper
Component 1 and copper sheet 3 are respectively arranged in the upper plane and lower plane of metallized ceramic plate 2, and copper component 1 and copper sheet 3 and metallization
The weldering of ceramic wafer 2 is linked together;Specifically, the metallized ceramic plate 2 includes ceramic wafer 4, molybdenum manganese metal layer 5 and nickel layer 6, institute
It states plane and lower plane on ceramic wafer 4 and is equipped with molybdenum manganese metal layer identical with size with the shape of copper component 1 and copper sheet 3 respectively
5 and 5 surface of molybdenum manganese metal layer be coated with nickel layer 6, the copper component 1 is covered on the nickel layer 6 of plane on ceramic wafer 4 and copper component
1 and ceramic wafer 4 on plane nickel layer 6 between be equipped with solder 7, the copper sheet 3 be covered on the nickel layer 6 of 4 lower plane of ceramic wafer and
Solder 7, the metallized ceramic plate 2, copper component 1, copper sheet 3 and weldering are equipped between the nickel layer 6 of 4 lower plane of copper sheet 3 and ceramic wafer
Material 7, which is put into weld copper component 1 and copper sheet 3 respectively after heating in vacuum brazing equipment simultaneously, is connected in the upper flat of metallized ceramic plate 2
Face and lower plane;Specifically, the molybdenum manganese metal layer 5 with a thickness of 30 μm, the nickel layer 6 with a thickness of 5 μm;Specifically,
The ceramic wafer 4 is circular sheet-like structures, the diameter of the ceramic wafer 4 be 175mm and ceramic wafer 4 with a thickness of 10mm;Specifically
, the copper component 1 is in parallel construction and copper component 1 by more copper bars disposed in parallel passes through circular arc in adjacent copper bar one end
The wavelike structure formed after transition connection, the distance between the width of the copper bar and adjacent copper bar are mutually all 7mm and copper bar
With a thickness of 1.8mm;Specifically, the copper component 1 and copper sheet 3 are that oxygenless copper material is made, the copper sheet 3 with a thickness of
The diameter of 1.8mm and copper sheet 3 is 148mm.
In the technical program, ceramic wafer 4 is by processing, after fine grinding processing, distinguishes in the upper plane and lower plane of ceramic wafer 4
Molybdenum manganese metal layer 5 is applied, molybdenum manganese metal layer 5 is after high-temperature reductibility atmosphere sintering, molybdenum manganese metal layer 5 and ceramic wafer 4
Under the high temperature conditions, the glass phase in ceramic wafer 4 and molybdenum manganese metal layer 5 interpenetrates, and the two is firmly sticked together, so
It is coated with nickel layer 6 on 5 surface of molybdenum manganese metal layer afterwards, nickel layer 6 is after high temperature sintering and then becomes fine and close, complete through the above process
At the metallization process of metallized ceramic plate 2;Size, shape and the copper component 1 of the molybdenum manganese metal layer 5 of plane on ceramic wafer 4
Shape, size it is completely the same, size, shape, the size of shape and copper sheet 3 of the molybdenum manganese metal layer 5 of 4 lower plane of ceramic wafer
Completely the same, the material of the copper component 1 and copper sheet 3 is oxygen-free copper, and copper component 1 is formed by linear cutter, and copper sheet 3 is
Vehicle Processing forms, and copper component 1 and copper sheet 3 are covered on the corresponding nickel layer of ceramic wafer 4 respectively after cleaning-drying is handled by the two
On 6, wherein solder 7 is accompanied between copper component 1 and the obverse nickel layer 6 of copper sheet 3 and ceramic wafer 4, by the above-mentioned metal prepared
Change ceramic wafer 2, copper component 1, copper sheet 3 and solder 7 to be placed on together in vacuum brazing equipment after heating, completes pulse power and form line
Processing.
The fixed form that the technical program copper component 1 and copper sheet 3 and metallized ceramic plate 2 weld, improves 1 He of copper component
The bonding strength of copper sheet 3 and metallized ceramic plate 2, it is easy to accomplish, it uses the ceramic wafer with good electrical properties for medium, assigns
State pulse forming line dielectric constant with higher, dielectric constant is adjustable, and dielectric loss is low, and resistance to breakdown strength is high, dielectric
Performance high frequency stability is good, state pulse forming line made of the technical program, has miniaturization, densification, structure is simple, easily
In processing the characteristics of.
Above-described embodiment, the only preferred embodiment of the utility model are not used to limit the utility model practical range,
Therefore all equivalence changes done with content described in the utility model claims, the utility model claims model should all be included in
Within enclosing.
Claims (6)
1. the state pulse forming line based on ceramic dielectric, it is characterised in that: including copper component (1), copper sheet (3) and metallization pottery
Porcelain plate (2), the copper component (1) and copper sheet (3) are respectively arranged in the upper plane and lower plane of metallized ceramic plate (2), and copper
Component (1) and copper sheet (3) are linked together with metallized ceramic plate (2) weldering.
2. the state pulse forming line according to claim 1 based on ceramic dielectric, it is characterised in that: the metallization pottery
Porcelain plate (2) includes ceramic wafer (4), molybdenum manganese metal layer (5) and nickel layer (6), and plane and lower plane are equipped on the ceramic wafer (4)
Molybdenum manganese metal layer (5) identical with size with the shape of copper component (1) and copper sheet (3) and molybdenum manganese metal layer (5) table respectively
Face is coated with nickel layer (6), and the copper component (1) is covered on the nickel layer (6) of plane on ceramic wafer (4) and copper component (1) and ceramics
Solder (7) are equipped between the nickel layer (6) of plane on plate (4), the copper sheet (3) is covered in the nickel layer (6) of ceramic wafer (4) lower plane
Solder (7) above and between copper sheet (3) and the nickel layer (6) of ceramic wafer (4) lower plane are equipped with, the metallized ceramic plate (2), copper structure
Part (1), copper sheet (3) and solder (7) are put into vacuum brazing equipment simultaneously and weld copper component (1) and copper sheet (3) respectively after heating
It is connected in the upper plane and lower plane of metallized ceramic plate (2).
3. the state pulse forming line according to claim 2 based on ceramic dielectric, it is characterised in that: the molybdenum manganese Metal
Change layer (5) with a thickness of 20~40 μm, the nickel layer (6) with a thickness of 3~6 μm.
4. the state pulse forming line according to claim 3 based on ceramic dielectric, it is characterised in that: the ceramic wafer
(4) be circular sheet-like structures, the diameter of the ceramic wafer (4) be 170~180mm and ceramic wafer (4) with a thickness of 8~12mm.
5. the state pulse forming line according to claim 1 based on ceramic dielectric, it is characterised in that: the copper component
(1) be in parallel construction and copper component (1) passes through arc transition in adjacent copper bar one end by more copper bars disposed in parallel and connects
The wavelike structure formed afterwards, the distance between the width of the copper bar and adjacent copper bar are mutually all the thickness of 6~8mm and copper bar
For 1.5~2mm.
6. based on the state pulse forming line of ceramic dielectric described according to claim 1 or 2 or 3 or 4 or 5, it is characterised in that:
The copper component (1) and copper sheet (3) are that oxygenless copper material is made, the copper sheet (3) with a thickness of 1.5~2mm and copper sheet (3)
Diameter be 145~150mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201821557992.8U CN208656153U (en) | 2018-09-25 | 2018-09-25 | State pulse forming line based on ceramic dielectric |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201821557992.8U CN208656153U (en) | 2018-09-25 | 2018-09-25 | State pulse forming line based on ceramic dielectric |
Publications (1)
Publication Number | Publication Date |
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CN208656153U true CN208656153U (en) | 2019-03-26 |
Family
ID=65774417
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201821557992.8U Active CN208656153U (en) | 2018-09-25 | 2018-09-25 | State pulse forming line based on ceramic dielectric |
Country Status (1)
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CN (1) | CN208656153U (en) |
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2018
- 2018-09-25 CN CN201821557992.8U patent/CN208656153U/en active Active
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Legal Events
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GR01 | Patent grant | ||
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TR01 | Transfer of patent right |
Effective date of registration: 20211125 Address after: No.53, Baoguang Road, Weibin District, Baoji City, Shaanxi Province 721006 Patentee after: SHAANXI BAOGUANG CERAMIC SCIENCE TECHNOLOGY CO.,LTD. Address before: No.53, Baoguang Road, Weibin District, Baoji City, Shaanxi Province 721006 Patentee before: SHAANXI BAOGUANG PRECISION CERAMICS CO.,LTD. |