CN208656153U - State pulse forming line based on ceramic dielectric - Google Patents

State pulse forming line based on ceramic dielectric Download PDF

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Publication number
CN208656153U
CN208656153U CN201821557992.8U CN201821557992U CN208656153U CN 208656153 U CN208656153 U CN 208656153U CN 201821557992 U CN201821557992 U CN 201821557992U CN 208656153 U CN208656153 U CN 208656153U
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China
Prior art keywords
copper
copper sheet
ceramic
component
sheet
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CN201821557992.8U
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Chinese (zh)
Inventor
尚晓博
赵童刚
杨桦
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SHAANXI BAOGUANG CERAMIC SCIENCE TECHNOLOGY CO.,LTD.
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Shaanxi Baoguang Precision Ceramics Co Ltd
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Abstract

A kind of state pulse forming line based on ceramic dielectric is provided, including copper component, copper sheet and metallized ceramic plate, the copper component and copper sheet are respectively arranged in the upper plane and lower plane of metallized ceramic plate, and copper component and copper sheet are linked together with the weldering of metallized ceramic plate.The fixed form that the utility model is welded using copper component and copper sheet and metallized ceramic plate, improve the bonding strength of copper component and copper sheet and metallized ceramic plate, constitute densification, the fixed pulse of miniaturization forms line, structure is simple, easy to process, dielectric constant with higher, dielectric loss is low, resistance to breakdown strength is high, use value with higher.

Description

State pulse forming line based on ceramic dielectric
Technical field
The utility model belongs to pulse-forming line technical field, and in particular to a kind of solid state pulse shape based on ceramic dielectric At line.
Background technique
The high-voltage pulse of capacitive character energy storage forms line as High-Power Microwave, the driving source of high power laser light and X-ray machine, High pulse power technology field is widely used.Traditional liquid energy-accumulating medium transformer oil dielectric constant is too low, bears Loading capability is weak;Although the dielectric constant of deionized water is met the requirements, but need a set of deionized water process units come produce from Sub- water, and deionized water is maintained to generate higher resistivity, miniaturization and densification that pulse power forms line are seriously affected, With the demand of the miniaturization of pulse power supply, the development of solid-state energy-accumulating medium pulse-forming line is paid more and more attention, and therefore, is had Necessity improves.
Utility model content
The technical problem solved by the utility model is:to provide a kind of state pulse forming lines based on ceramic dielectric, using copper The fixed form of component and the welding of copper sheet and metallized ceramic plate, improves the connection of copper component and copper sheet and metallized ceramic plate Intensity constitutes the fixed pulse formation line of densification, miniaturization, and structure is simple, easy to process, dielectric constant with higher, Dielectric loss is low, and resistance to breakdown strength is high, use value with higher.
The technical solution adopted in the utility model: the state pulse forming line based on ceramic dielectric, including copper component, copper sheet With metallized ceramic plate, the copper component and copper sheet are respectively arranged in the upper plane and lower plane of metallized ceramic plate, and copper structure Part and copper sheet are linked together with the weldering of metallized ceramic plate.
Wherein, the metallized ceramic plate includes ceramic wafer, molybdenum manganese metal layer and nickel layer, on the ceramic wafer plane and Lower plane is equipped with molybdenum manganese metal layer identical with size with the shape of copper component and copper sheet and molybdenum manganese metal layer surface respectively It is coated with nickel layer, the copper component is covered on ceramic wafer on the nickel layer of plane and on copper component and ceramic wafer between the nickel layer of plane Equipped with solder, the copper sheet is covered on the nickel layer of ceramic wafer lower plane and is equipped between copper sheet and the nickel layer of ceramic wafer lower plane Solder, the metallized ceramic plate, copper component, copper sheet and solder be put into copper component in vacuum brazing equipment simultaneously after heating and Copper sheet welds the upper plane and lower plane for being connected in metallized ceramic plate respectively.
Further, the molybdenum manganese metal layer with a thickness of 20~40 μm, the nickel layer with a thickness of 3~6 μm.
Further, the ceramic wafer is circular sheet-like structures, and the diameter of the ceramic wafer is 170~180mm and ceramics Plate with a thickness of 8~12mm.
Further, the copper component in parallel construction and copper component by more copper bars disposed in parallel in adjacent copper bar one The wavelike structure that end is formed after being connected by arc transition, the width of the copper bar are identical as the distance between adjacent copper bar For 6~8mm and copper bar with a thickness of 1.5~2mm.
Further, the copper component and copper sheet are that oxygenless copper material is made, the copper sheet with a thickness of 1.5~2mm And the diameter of copper sheet is 145~150mm.
The utility model compared with prior art the advantages of:
1, the fixed form of the technical program copper component and the welding of copper sheet and metallized ceramic plate, improves copper component and copper The bonding strength of piece and metallized ceramic plate, it is easy to accomplish;
2, the technical program uses the ceramic wafer with good electrical properties for medium, and imparting state pulse forming line has Higher dielectric constant, dielectric constant is adjustable, and dielectric loss is low, and resistance to breakdown strength is high, and dielectric properties high frequency stability is good;
3, state pulse forming line made of the technical program has miniaturization, densification, and structure is simple, easy to process The characteristics of.
Detailed description of the invention
FIG. 1 is a schematic structural view of the utility model;
Fig. 2 is A-A cross-sectional view in Fig. 1;
Fig. 3 is partial enlargement diagram at I in Fig. 2.
Specific embodiment
1-3 describes an embodiment of the present invention with reference to the accompanying drawing.
State pulse forming line based on ceramic dielectric, including copper component 1, copper sheet 3 and metallized ceramic plate 2, the copper Component 1 and copper sheet 3 are respectively arranged in the upper plane and lower plane of metallized ceramic plate 2, and copper component 1 and copper sheet 3 and metallization The weldering of ceramic wafer 2 is linked together;Specifically, the metallized ceramic plate 2 includes ceramic wafer 4, molybdenum manganese metal layer 5 and nickel layer 6, institute It states plane and lower plane on ceramic wafer 4 and is equipped with molybdenum manganese metal layer identical with size with the shape of copper component 1 and copper sheet 3 respectively 5 and 5 surface of molybdenum manganese metal layer be coated with nickel layer 6, the copper component 1 is covered on the nickel layer 6 of plane on ceramic wafer 4 and copper component 1 and ceramic wafer 4 on plane nickel layer 6 between be equipped with solder 7, the copper sheet 3 be covered on the nickel layer 6 of 4 lower plane of ceramic wafer and Solder 7, the metallized ceramic plate 2, copper component 1, copper sheet 3 and weldering are equipped between the nickel layer 6 of 4 lower plane of copper sheet 3 and ceramic wafer Material 7, which is put into weld copper component 1 and copper sheet 3 respectively after heating in vacuum brazing equipment simultaneously, is connected in the upper flat of metallized ceramic plate 2 Face and lower plane;Specifically, the molybdenum manganese metal layer 5 with a thickness of 30 μm, the nickel layer 6 with a thickness of 5 μm;Specifically, The ceramic wafer 4 is circular sheet-like structures, the diameter of the ceramic wafer 4 be 175mm and ceramic wafer 4 with a thickness of 10mm;Specifically , the copper component 1 is in parallel construction and copper component 1 by more copper bars disposed in parallel passes through circular arc in adjacent copper bar one end The wavelike structure formed after transition connection, the distance between the width of the copper bar and adjacent copper bar are mutually all 7mm and copper bar With a thickness of 1.8mm;Specifically, the copper component 1 and copper sheet 3 are that oxygenless copper material is made, the copper sheet 3 with a thickness of The diameter of 1.8mm and copper sheet 3 is 148mm.
In the technical program, ceramic wafer 4 is by processing, after fine grinding processing, distinguishes in the upper plane and lower plane of ceramic wafer 4 Molybdenum manganese metal layer 5 is applied, molybdenum manganese metal layer 5 is after high-temperature reductibility atmosphere sintering, molybdenum manganese metal layer 5 and ceramic wafer 4 Under the high temperature conditions, the glass phase in ceramic wafer 4 and molybdenum manganese metal layer 5 interpenetrates, and the two is firmly sticked together, so It is coated with nickel layer 6 on 5 surface of molybdenum manganese metal layer afterwards, nickel layer 6 is after high temperature sintering and then becomes fine and close, complete through the above process At the metallization process of metallized ceramic plate 2;Size, shape and the copper component 1 of the molybdenum manganese metal layer 5 of plane on ceramic wafer 4 Shape, size it is completely the same, size, shape, the size of shape and copper sheet 3 of the molybdenum manganese metal layer 5 of 4 lower plane of ceramic wafer Completely the same, the material of the copper component 1 and copper sheet 3 is oxygen-free copper, and copper component 1 is formed by linear cutter, and copper sheet 3 is Vehicle Processing forms, and copper component 1 and copper sheet 3 are covered on the corresponding nickel layer of ceramic wafer 4 respectively after cleaning-drying is handled by the two On 6, wherein solder 7 is accompanied between copper component 1 and the obverse nickel layer 6 of copper sheet 3 and ceramic wafer 4, by the above-mentioned metal prepared Change ceramic wafer 2, copper component 1, copper sheet 3 and solder 7 to be placed on together in vacuum brazing equipment after heating, completes pulse power and form line Processing.
The fixed form that the technical program copper component 1 and copper sheet 3 and metallized ceramic plate 2 weld, improves 1 He of copper component The bonding strength of copper sheet 3 and metallized ceramic plate 2, it is easy to accomplish, it uses the ceramic wafer with good electrical properties for medium, assigns State pulse forming line dielectric constant with higher, dielectric constant is adjustable, and dielectric loss is low, and resistance to breakdown strength is high, dielectric Performance high frequency stability is good, state pulse forming line made of the technical program, has miniaturization, densification, structure is simple, easily In processing the characteristics of.
Above-described embodiment, the only preferred embodiment of the utility model are not used to limit the utility model practical range, Therefore all equivalence changes done with content described in the utility model claims, the utility model claims model should all be included in Within enclosing.

Claims (6)

1. the state pulse forming line based on ceramic dielectric, it is characterised in that: including copper component (1), copper sheet (3) and metallization pottery Porcelain plate (2), the copper component (1) and copper sheet (3) are respectively arranged in the upper plane and lower plane of metallized ceramic plate (2), and copper Component (1) and copper sheet (3) are linked together with metallized ceramic plate (2) weldering.
2. the state pulse forming line according to claim 1 based on ceramic dielectric, it is characterised in that: the metallization pottery Porcelain plate (2) includes ceramic wafer (4), molybdenum manganese metal layer (5) and nickel layer (6), and plane and lower plane are equipped on the ceramic wafer (4) Molybdenum manganese metal layer (5) identical with size with the shape of copper component (1) and copper sheet (3) and molybdenum manganese metal layer (5) table respectively Face is coated with nickel layer (6), and the copper component (1) is covered on the nickel layer (6) of plane on ceramic wafer (4) and copper component (1) and ceramics Solder (7) are equipped between the nickel layer (6) of plane on plate (4), the copper sheet (3) is covered in the nickel layer (6) of ceramic wafer (4) lower plane Solder (7) above and between copper sheet (3) and the nickel layer (6) of ceramic wafer (4) lower plane are equipped with, the metallized ceramic plate (2), copper structure Part (1), copper sheet (3) and solder (7) are put into vacuum brazing equipment simultaneously and weld copper component (1) and copper sheet (3) respectively after heating It is connected in the upper plane and lower plane of metallized ceramic plate (2).
3. the state pulse forming line according to claim 2 based on ceramic dielectric, it is characterised in that: the molybdenum manganese Metal Change layer (5) with a thickness of 20~40 μm, the nickel layer (6) with a thickness of 3~6 μm.
4. the state pulse forming line according to claim 3 based on ceramic dielectric, it is characterised in that: the ceramic wafer (4) be circular sheet-like structures, the diameter of the ceramic wafer (4) be 170~180mm and ceramic wafer (4) with a thickness of 8~12mm.
5. the state pulse forming line according to claim 1 based on ceramic dielectric, it is characterised in that: the copper component (1) be in parallel construction and copper component (1) passes through arc transition in adjacent copper bar one end by more copper bars disposed in parallel and connects The wavelike structure formed afterwards, the distance between the width of the copper bar and adjacent copper bar are mutually all the thickness of 6~8mm and copper bar For 1.5~2mm.
6. based on the state pulse forming line of ceramic dielectric described according to claim 1 or 2 or 3 or 4 or 5, it is characterised in that: The copper component (1) and copper sheet (3) are that oxygenless copper material is made, the copper sheet (3) with a thickness of 1.5~2mm and copper sheet (3) Diameter be 145~150mm.
CN201821557992.8U 2018-09-25 2018-09-25 State pulse forming line based on ceramic dielectric Active CN208656153U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201821557992.8U CN208656153U (en) 2018-09-25 2018-09-25 State pulse forming line based on ceramic dielectric

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201821557992.8U CN208656153U (en) 2018-09-25 2018-09-25 State pulse forming line based on ceramic dielectric

Publications (1)

Publication Number Publication Date
CN208656153U true CN208656153U (en) 2019-03-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201821557992.8U Active CN208656153U (en) 2018-09-25 2018-09-25 State pulse forming line based on ceramic dielectric

Country Status (1)

Country Link
CN (1) CN208656153U (en)

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Effective date of registration: 20211125

Address after: No.53, Baoguang Road, Weibin District, Baoji City, Shaanxi Province 721006

Patentee after: SHAANXI BAOGUANG CERAMIC SCIENCE TECHNOLOGY CO.,LTD.

Address before: No.53, Baoguang Road, Weibin District, Baoji City, Shaanxi Province 721006

Patentee before: SHAANXI BAOGUANG PRECISION CERAMICS CO.,LTD.