CN208632635U - The cathode assembly of vacuum splashing and plating system - Google Patents
The cathode assembly of vacuum splashing and plating system Download PDFInfo
- Publication number
- CN208632635U CN208632635U CN201821174296.9U CN201821174296U CN208632635U CN 208632635 U CN208632635 U CN 208632635U CN 201821174296 U CN201821174296 U CN 201821174296U CN 208632635 U CN208632635 U CN 208632635U
- Authority
- CN
- China
- Prior art keywords
- sealing plate
- pumping
- electrode unit
- chamber
- cathode electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
A kind of cathode assembly of vacuum splashing and plating system, is suitably mounted to define on the cavity of chamber, and includes sealing plate, cathode electrode unit, and pumping side Pu.The sealing plate is suitable for that the chamber is assembled and sealed with the cavity, which is formed with bleeding point.The cathode electrode unit is assembled in below the sealing plate and is located at the chamber, and the cathode electrode unit and sealing plate cooperation circle are in pumping runner out.Pumping side Pu corresponds to the bleeding point and is assembled on the sealing plate, and its position is corresponding up and down with the cathode electrode unit, and pumping side Pu is suitable for via the bleeding point and the pumping runner and taking away the gas of the chamber.Pu is helped to be located at cathode electrode unit top by the pumping, when pumping can shorten gas movement routine, and the speed of evacuation is fast, high-efficient, and can promote process stability.
Description
Technical field
The utility model relates to a kind of cathode assemblies, more particularly to a kind of cathode assembly of vacuum splashing and plating system.
Background technique
Refering to fig. 1, it is known that vacuum splashing and plating system include a cavity 91, a cathode electrode unit 92 and two pumping side Pus 93.
The cavity 91 defines a centrally located coating chamber 911 and two is located at the left and right sides of the coating chamber 911
Prepare chamber 912.There are two the cavity 91 tools runs through its cavity wall and is correspondingly located at the left and right sides of the cathode electrode unit 92
Bleeding point 910.It is available that the cathode electrode unit 92 is equipped with pipeline 922 and two of the target 921, two for being passed through a process gas
In the partition 923 for blocking some materials that the target 921 sputters.Pumping side Pu 93 is mounted on the cavity 91, and point
910 position of bleeding point is not corresponded to.
In use, pumping side Pu 93 is respectively evacuated the preparation chamber 912, it will be in the coating chamber 911
Process gas is extracted out via the preparation chamber 912, the bleeding point 910, reaches the coating chamber 911 needed for film-plating process
Vacuum degree.When carrying out plated film, a substrate not shown is sent into the cavity 91 and is located at 923 lower section of partition, the target
The material that material 921 is sputtered out can be attached on the substrate and form film.
However, the vacuum splashing and plating system is using above there is missing.Since pumping side Pu 93 is located at the cathode electrode unit 92
The left and right sides, when being evacuated pumping side Pu 93, the movement routine of the process gas is by the coating chamber 911 via the preparation
(gas movement routine is as direction of the arrows shown in fig) is siphoned away by pumping side Pu 93 again after chamber 912, the bleeding point 910, causes to make
The movement routine of journey gas is long, and pumping efficiency is poor.And process gas can be flowed through and is intended to above the substrate of plated film, for sputtering
921 material of target be attached to the film forming procedure on substrate and can have an impact, cause to increase the unstability of processing procedure, influence into film quality
Amount.
Summary of the invention
The purpose of this utility model is to provide a kind of vacuum splashing and plating systems of at least one disadvantage that can overcome background technique
The cathode assembly of system.
The cathode assembly of the utility model vacuum splashing and plating system, is suitably mounted to define on the cavity of chamber, and wrap
Containing below being suitable for that the sealing plate of the chamber is assembled and sealed with the cavity, being assembled in the sealing plate and positioned at the cathode of the chamber
Unit, and pumping side Pu.The sealing plate is formed with bleeding point, which defines with sealing plate cooperation and be connected to the pumping
The pumping runner of port and the chamber, the pumping side Pu correspond to the bleeding point and is assembled on the sealing plate, and its position and this
Cathode electrode unit is corresponding up and down, and pumping side Pu is suitable for via the bleeding point and the pumping runner and taking away the gas of the chamber.
The cathode assembly of vacuum splashing and plating system described in the utility model, also comprising being set to the bleeding point and being located at the pumping
Help the strainer below Pu.
The cathode assembly of vacuum splashing and plating system described in the utility model, also comprising between the sealing plate and the cathode electrode unit
Insulating base, which has several insulated columns being spaced each other and separate the sealing plate and the cathode electrode unit.
The cathode assembly of vacuum splashing and plating system described in the utility model, also the water route switching comprising being set on the sealing plate
Part, and insulation lantern ring, the water route adapter include the pinboard portion above the sealing plate, which is located at this turn
Between fishplate bar portion and the sealing plate.
The utility model has the beneficial effects that: helping Pu to be installed on the sealing plate by the pumping, and it is correspondingly located at
Above the cathode electrode unit, when pumping, gas can be moved up directly by the chamber, and via the pumping runner and bleeding point and by
Pumping side takes away at Pu, can so shorten gas movement routine, and the speed of evacuation is fast, high-efficient, and process gas is avoided to influence plating
Membrane process can promote process stability.
Detailed description of the invention
Other features and effect of the utility model will be clearly presented in the embodiment referring to schema, in which:
Fig. 1 is an a kind of partial schematic diagram of known vacuum splashing and plating system, when arrow signal gas is pumped in figure
Gas movement routine；
Fig. 2 is a stereoscopic schematic diagram of an embodiment of the cathode assembly of the utility model vacuum splashing and plating system；
Fig. 3 is a schematic cross-sectional view, illustrates the assembled relation of the embodiment Yu a cavity, and arrow signal gas is taken out in figure
Gas movement routine when walking；
Fig. 4 is a bottom-up stereoscopic schematic diagram for the embodiment.
Specific embodiment
Refering to Fig. 2~4, an embodiment of the cathode assembly of the utility model vacuum splashing and plating system is suitably mounted to one
On the cavity 1 for defining a chamber 10, and it is suitable for being passed through a cooling fluid to cool.The cathode assembly includes a sealing
Plate 2, a cathode electrode unit 3, an insulating base 4, one pumping side Pu 5, a strainer 6, two water route adapters 7 and two insulation lantern rings 8.
The sealing plate 2 is suitable for assembling with the cavity 1 and seals the chamber 10.The sealing plate 2 is level board sheet, material
Matter is such as, but not limited to aluminium, and is formed with a bleeding point 21 that bottom surface is extended to from its top surface.
The cathode electrode unit 3 is assembled in 2 lower section of sealing plate, and is located at the chamber 10.The cathode electrode unit 3 and the sealing plate 2
Cooperation defines the pumping runner 31 of connection bleeding point 21 and the chamber 10.The cathode electrode unit 3 is in vacuum splashing and plating system
For the position for target installation, further, when being used for magnetic control sputtering plating system, which may include at least
One is set to the magnet above the target, to increase the electron flow path in sputter system, to promote the system of electronic impact one
The probability of journey gas molecule, and then the ionization rate of process gas is promoted, to promote sputtering rate.
The insulating base 4 is located between sealing plate 2 and the cathode electrode unit 3, and have it is several be spaced each other and by the sealing plate 2 with
The insulated column 41 that the cathode electrode unit 3 separates.Reach insulation effect by the insulating base 4, electricity is made to introduce the problems such as not having short circuit
Occur, and the insulating base 4 has effects that the stabilization of the sealing plate 2 being supported in 3 top of cathode electrode unit, therefore insulating base 4
Have both support and insulation function.
The pumping helps Pu 5 to be such as, but not limited to a turbine and helps Pu, and corresponds to the bleeding point 21 and be assembled in the sealing plate 2
On, position is corresponding with about 3 cathode electrode unit.The strainer 6 is set to the bleeding point 21 and is located at pumping side, 5 lower section, Pu,
When making the pumping that Pu 5 be helped to be evacuated by the strainer 6, the part foreign matter of the chamber 10 can be stopped by the strainer 6, foreign matter is avoided to be taken out
Enter pumping side Pu 5 and influences the performance that Pu 5 is helped in the pumping.
7 or so the compartment of terrain of water route adapter is set on the sealing plate 2, and each water route adapter 7 is located at including one
Pinboard portion 71 and one above the sealing plate 2 are extended through the pipe portion 72 in 71 center of pinboard portion.The 72 part dew of pipe portion
For 71 top of pinboard portion, it is locally passed down through the pinboard portion 71.The top section of the pipe portion 72 can be separately connected with bottom section
One cooling line not shown, the cooling line when film-plating process carries out, are flowed for being passed through the cooling fluid by the cooling
Body can absorb the thermal energy of the cathode electrode unit 3 generation, reaches the effect that cools.But due to the configuration of cooling line non-it is practical new
The improvement emphasis of type, so no longer illustrating.
The insulation lantern ring 8 is located between the pinboard portion 71 of the water route adapter 7 and the sealing plate 2, reaches good
Good electric insulating effect.It should be noted that the quantity of the water route adapter 7 is not limited to two when implementing, such as can also be with
To be one or more, the lantern ring 8 that insulate at this time is also correspondingly arranged one or more.
In use, due to forming the pumping runner 31 between the cathode electrode unit 3 and the sealing plate 2, which helps Pu 5 can be via
The bleeding point 21 and the pumping runner 31 and take the process gas being passed through in the chamber 10 away, so that chamber 10 is maintained certain vacuum
Degree.Since process gas is passed through towards arround the cathode electrode unit 3, pumping side Pu 5 is mounted on right above cathode electrode unit 3
And be evacuated, making process gas, directly up flowing is taken away, can shorten the pumping movement routine of process gas, the speed of evacuation is fast,
It is high-efficient, and it is avoided that process gas flows downwardly through the substrate (not shown) of a desire plated film, therefore can avoid process gas influence
The substrate, to promote process stability.Also it just because of pumping side Pu 5 is directly arranged at 3 top of cathode electrode unit, rather than is set to
The left and right sides of the cathode electrode unit 3, therefore the Design of length of the cavity 1 can be shortened, and then reduce equipment cost.
In conclusion helping Pu 5 to be installed on the sealing plate 2 by the pumping, and it is correspondingly located on the cathode electrode unit 3
Just, when pumping, gas can be moved up directly by the chamber 10 and be taken away by pumping side Pu 5, and it is mobile can so to shorten gas
Path, the speed of evacuation is fast, high-efficient, and process gas is avoided to influence coating process, can promote process stability.
As described above, only the embodiments of the present invention, when the utility model implementation cannot be limited with this
Range, i.e., it is all according to simple equivalent changes and modifications made by the utility model claims book and description, all still belong to
The scope of the utility model.
Claims (4)
1. a kind of cathode assembly of vacuum splashing and plating system, is suitably mounted to define on the cavity of chamber, and include: be suitable for
The sealing plate of the chamber is assembled and sealed with the cavity, is assembled in sealing plate lower section and is located at the cathode electrode unit of the chamber, with
And pumping side Pu, which is characterized in that the sealing plate is formed with bleeding point, which defines with sealing plate cooperation and be connected to
The pumping runner of the bleeding point and the chamber, pumping side Pu corresponds to the bleeding point and is assembled on the sealing plate, and its position
Corresponding up and down with the cathode electrode unit, pumping side Pu is suitable for via the bleeding point and the pumping runner and taking away the gas of the chamber
Body.
2. the cathode assembly of vacuum splashing and plating system as described in claim 1, it is characterised in that: the cathode of the vacuum splashing and plating system
Device also includes the strainer for being set to the bleeding point and being located at below pumping side Pu.
3. the cathode assembly of vacuum splashing and plating system as described in claim 1, it is characterised in that: the cathode of the vacuum splashing and plating system
Device also includes the insulating base between the sealing plate and the cathode electrode unit, which has several be spaced each other and this is close
The insulated column that sealing plate and the cathode electrode unit separate.
4. the cathode assembly of vacuum splashing and plating system as described in claim 1, it is characterised in that: the cathode of the vacuum splashing and plating system
Device also includes the water route adapter being set on the sealing plate, and insulation lantern ring, which includes close positioned at this
Pinboard portion above sealing plate, the insulation lantern ring are located between the pinboard portion and the sealing plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821174296.9U CN208632635U (en) | 2018-07-24 | 2018-07-24 | The cathode assembly of vacuum splashing and plating system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821174296.9U CN208632635U (en) | 2018-07-24 | 2018-07-24 | The cathode assembly of vacuum splashing and plating system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208632635U true CN208632635U (en) | 2019-03-22 |
Family
ID=65739216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821174296.9U Active CN208632635U (en) | 2018-07-24 | 2018-07-24 | The cathode assembly of vacuum splashing and plating system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208632635U (en) |
-
2018
- 2018-07-24 CN CN201821174296.9U patent/CN208632635U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102171782A (en) | X-ray tube anodes | |
| CN101148752A (en) | Sealing device used for 10(-8)Pa ultra-high vacuum round plane magnetron sputtering target | |
| CN101250687A (en) | Rectangle plane magnetron sputtering cathode | |
| CN208632635U (en) | The cathode assembly of vacuum splashing and plating system | |
| CN102953039B (en) | Rotating cathode for vacuum magnetron sputtering coating | |
| CN113357113A (en) | Air supply and insulation integrated structure of space electric thruster | |
| CN207250239U (en) | A kind of three pillar supporting insulator of disc type for ultra-high/extra-high voltage GIS/GIL | |
| CN103290388A (en) | Plasma coating equipment and air extraction process thereof | |
| CN103320752B (en) | Evaporating and coating equipment and air aspiration process thereof | |
| CN101741218A (en) | Electromagnetic pump for driving conductive fluid and manufacturing method thereof | |
| CN205845892U (en) | A kind of cooling water circulation structure of stock ion source | |
| CN207558737U (en) | A kind of lanthanum hexaboride cold-cathode Penning ion source device | |
| CN202246844U (en) | Magnet and water separated type plane magnetron sputtering target | |
| CN201530858U (en) | Cathode cooling device of magnetic control sputtering device | |
| CN208444150U (en) | A kind of microchannel plate test caesium furnace system | |
| US4700109A (en) | Crossed-field amplifier | |
| CN101308716B (en) | Matrix type dielectric water-cooling resistor locker | |
| CN109841448B (en) | Solid-sealed polar pole based on liquid cooling | |
| CN210065899U (en) | Magnetron sputtering cathode with high target material utilization rate | |
| CN207505200U (en) | A kind of penning internal ion-source cooling sealing device | |
| CN207918946U (en) | Magnetron sputtering apparatus and its cathode assembly | |
| CN220224308U (en) | Water return device and magnetron sputtering equipment | |
| CN102994963A (en) | Continuous winding sputter coating machine | |
| CN103208637B (en) | Zinc-oxygen battery pack with cooling function | |
| CN211321296U (en) | High-performance graphene solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |