CN208622763U - A kind of high-voltage chip electrode - Google Patents
A kind of high-voltage chip electrode Download PDFInfo
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- CN208622763U CN208622763U CN201820772946.3U CN201820772946U CN208622763U CN 208622763 U CN208622763 U CN 208622763U CN 201820772946 U CN201820772946 U CN 201820772946U CN 208622763 U CN208622763 U CN 208622763U
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Abstract
The utility model relates to a kind of high-voltage chip electrode, the extremely straight strip-like electrodes of high-voltage chip electricity consumption.Utility model has the advantages that the utility model high-voltage chip electrode, changing T font electrode is straight strip-like electrodes, since straight strip-like electrodes are compared with T font electrode, the convex body that end does not extend to two sides, reduce the ratio that electrode area accounts for chip area, so that chip bearing electric current is stronger, and then the ageing properties and photoelectric efficiency of chip can be effectively promoted, and photoelectric efficiency can promote 1~3%.
Description
Technical field
The utility model belongs to technical field of semiconductors, in particular to a kind of high-voltage chip electrode.
Background technique
With the high speed development of semiconductor integration technology, it is a kind of be known as high-voltage chip LED structure come into being.Currently,
General semiconductor high-voltage chip shines partly as shown in Figure 1, including substrate 1, the light emitting semiconductor layer being formed on the substrate 1
Conductor layer includes the N type semiconductor layer 2 set gradually, active layer 3 and p type semiconductor layer 4；The N type partly lead 2 body layers with
It is connected respectively by T font electrode 5 and T font electrode 6 between active layer 3 and between active layer 3 and p type semiconductor layer 4；
Since the end of T font electrode is stretched out to two sides, thus need the link slot being provided with that should wrap up entire electrode in light emitting semiconductor layer
End, and then electrode area account for chip area ratio it is relatively large so that carrying electric current, ageing properties and the photoelectricity of chip
Efficiency is relatively weak.
Therefore, a kind of high-voltage chip electricity consumption of carrying electric current, ageing properties and photoelectric efficiency for being able to ascend chip is researched and developed
Pole is necessary.
Utility model content
The technical problem to be solved by the present invention is to provide a kind of carrying electric current for being able to ascend chip, ageing properties and
The high-voltage chip electrode of photoelectric efficiency.
In order to solve the above technical problems, the technical solution of the utility model are as follows: a kind of high-voltage chip electrode, innovative point
It is: the extremely straight strip-like electrodes of high-voltage chip electricity consumption.
Further, high-voltage chip include substrate, the light emitting semiconductor layer that is formed on the substrate, described shine partly lead
Body layer includes N type semiconductor layer, active layer and the p type semiconductor layer set gradually；The straight strip-like electrodes are respectively used to connect
Connect N type semiconductor layer and active layer and active layer and p type semiconductor layer.
It is further, described for connecting N type semiconductor layer and the straight strip-like electrodes of active layer are denoted as vertical bar type electrode A,
Straight strip-like electrodes for connecting active layer and p type semiconductor layer are denoted as vertical bar type electrode B；
The active layer is provided with and the vertical bar matched half slot A of type electrode A one end, institute close to n type semiconductor layer side
It states the vertical bar type electrode A other end and is connected and fixed by extension lead A with n type semiconductor layer；
The p type semiconductor layer is provided with and the vertical bar matched half slot B of type electrode B one end, institute close to active layer side
The other end for stating vertical bar type electrode B is connected and fixed by extension lead B with active layer.
Utility model has the advantages that the utility model high-voltage chip electrode, changing T font electrode is vertical bar type electricity
Pole, since straight strip-like electrodes are compared with T font electrode, the convex body that end does not extend to two sides reduces electrode area and accounts for core
The ratio of piece area, so that chip bearing electric current is stronger, and then can effectively promote the ageing properties and photoelectric efficiency of chip, and
Photoelectric efficiency can promote 1~3%.
Detailed description of the invention
Utility model will be further described in detail below with reference to the attached drawings and specific embodiments.
Fig. 1 is the structural schematic diagram of semiconductor high-voltage chip in background technique.
Fig. 2 is the structural schematic diagram of embodiment high-voltage chip.
Specific embodiment
The following examples can make professional and technical personnel that the utility model be more fully understood, but therefore will not
The utility model is limited among the embodiment described range.
Embodiment
The present embodiment high-voltage chip electrode, as shown in Fig. 2, the extremely straight strip-like electrodes of high-voltage chip electricity consumption.
The straight strip-like electrodes high-voltage chip of the present embodiment shines including substrate 7, the light emitting semiconductor layer being formed on substrate 7
Semiconductor layer includes the N type semiconductor layer 8 set gradually, active layer 9 and p type semiconductor layer 10；N type semiconductor layer 8 with have
Connected respectively by straight strip-like electrodes 11 and straight strip-like electrodes 12 between active layer 9 and between active layer 9 and p type semiconductor layer 10
It connects.
In the present embodiment, active layer 9 is provided with matched with straight 11 one end of strip-like electrodes close to 8 side of n type semiconductor layer
Half slot 91, straight 11 other end of strip-like electrodes are connected and fixed by extending lead 13 with n type semiconductor layer 8.
P type semiconductor layer 10 close to 9 side of active layer be provided with the straight matched half slot 101 of 12 one end of strip-like electrodes,
The other end of straight strip-like electrodes 12 is connected and fixed by extending lead 14 with active layer 9.
The straight strip-like electrodes high-voltage chip of the present embodiment and tradition T font electrode high-voltage chip are compared, performance pair
It see the table below than parameter:
| Performance | Embodiment | Traditional T font electrode high-voltage chip |
| Carry electric current | 0.130mA/mil² | 0.125mA/mil² |
| Ageing properties (with a chip under aging condition) | Aging 96H light decay 80% | Aging 96H light decay 60% |
| Photoelectric efficiency (compares and conventional high-tension chip) | 61.5% | 60% |
As can be seen from the above table, it is straight strip-like electrodes that the present embodiment high-voltage chip, which changes T font electrode, due to straight strip-like electrodes
Compared with T font electrode, the convex body that end does not extend to two sides reduces the ratio that electrode area accounts for chip area, so that
Chip bearing electric current is stronger, and then can effectively promote the ageing properties and photoelectric efficiency of chip, and photoelectric efficiency improves
1.5%。
The advantages of basic principles and main features and the utility model of the utility model have been shown and described above.This
The technical staff of industry is retouched in above embodiments and description it should be appreciated that the present utility model is not limited to the above embodiments
That states only illustrates the principles of the present invention, on the premise of not departing from the spirit and scope of the utility model, the utility model
It will also have various changes and improvements, these various changes and improvements fall within the scope of the claimed invention.This is practical new
Type is claimed range and is defined by the appending claims and its equivalent thereof.
Claims (2)
1. a kind of high-voltage chip electrode, it is characterised in that: the extremely straight strip-like electrodes of high-voltage chip electricity consumption；The high pressure core
The light emitting semiconductor layer that piece includes substrate, is formed on the substrate, the light emitting semiconductor layer include the N-type half set gradually
Conductor layer, active layer and p type semiconductor layer；The straight strip-like electrodes be respectively used to connection n type semiconductor layer and active layer and
Active layer and p type semiconductor layer.
2. high-voltage chip electrode according to claim 1, it is characterised in that: it is described for connect n type semiconductor layer with
The straight strip-like electrodes of active layer are denoted as vertical bar type electrode A, and the straight strip-like electrodes for connecting active layer and p type semiconductor layer are denoted as
Vertical bar type electrode B；
The active layer close to n type semiconductor layer side be provided with the matched half slot A of vertical bar type electrode A one end, it is described straight
The strip-like electrodes A other end is connected and fixed by extension lead A with n type semiconductor layer；The p type semiconductor layer is close to active layer one
Side be provided with the vertical bar matched half slot B of type electrode B one end, the other end of the vertical bar type electrode B by extension lead B with
Active layer is connected and fixed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820772946.3U CN208622763U (en) | 2018-05-23 | 2018-05-23 | A kind of high-voltage chip electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820772946.3U CN208622763U (en) | 2018-05-23 | 2018-05-23 | A kind of high-voltage chip electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208622763U true CN208622763U (en) | 2019-03-19 |
Family
ID=65700558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820772946.3U Active CN208622763U (en) | 2018-05-23 | 2018-05-23 | A kind of high-voltage chip electrode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208622763U (en) |
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2018
- 2018-05-23 CN CN201820772946.3U patent/CN208622763U/en active Active
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