CN208608207U - Solar power generation component and thin-film solar cells - Google Patents
Solar power generation component and thin-film solar cells Download PDFInfo
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- CN208608207U CN208608207U CN201821190659.8U CN201821190659U CN208608207U CN 208608207 U CN208608207 U CN 208608207U CN 201821190659 U CN201821190659 U CN 201821190659U CN 208608207 U CN208608207 U CN 208608207U
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The disclosure provides a kind of solar power generation component and thin-film solar cells, is related to photovoltaic technology field.The thin-film solar cells includes substrate, back electrode, photoelectric conversion layer and multiple gate electrodes, and back electrode is set to substrate, and has multiple road plan.Photoelectric conversion layer is set on back electrode, and photoelectric conversion layer corresponds to the recessed corresponding road plan in region of each road plan, to form accommodation groove.Multiple gate electrodes are set to correspondingly in each accommodation groove.The thin-film solar cells of the disclosure can make to encapsulate more convenient in the case where not reducing gate electrode thickness, and improve packaging effect.
Description
Technical field
This disclosure relates to photovoltaic technology field, in particular to a kind of solar power generation component and thin film solar electricity
Pond.
Background technique
It with the development of solar energy generation technology, will be used wider and wider general, solar battery is solar power generation
Core component, wherein thin-film solar cells, because it has flexible and lighter in weight, can preferably in conjunction with building, because
And it has been widely used.
Due to thin-film solar cells core material all to steam it is very sensitive, its hair can be made by being exposed under atmospheric environment
Electrical efficiency reduces, and therefore, the encapsulation of thin-film solar cells is particularly significant.Currently, the encapsulation of thin-film solar cells is mainly
Realize that still, the gate electrode at the top of thin-film solar cells more protrudes, and is not reducing gate electrode thickness by setting encapsulating film
Under the premise of, encapsulation difficulty is larger, and packaging effect is poor.
It should be noted that information is only used for reinforcing the reason to the background of the disclosure disclosed in above-mentioned background technology part
Solution, therefore may include the information not constituted to the prior art known to persons of ordinary skill in the art.
Utility model content
The disclosure is designed to provide a kind of solar power generation component and thin-film solar cells, can not reduce grid electricity
In the case where the thickness of pole, make to encapsulate more convenient, and improves packaging effect.
According to one aspect of the disclosure, a kind of thin-film solar cells is provided, comprising:
Substrate；
Back electrode is set to the substrate, and has multiple road plan；
Photoelectric conversion layer is set on the back electrode, and the region that the photoelectric conversion layer corresponds to each road plan is recessed
The corresponding road plan, to form accommodation groove；
Multiple gate electrodes are set in each accommodation groove correspondingly.
In a kind of exemplary embodiment of the disclosure, the gate electrode is identical as the thickness of the back electrode.
In a kind of exemplary embodiment of the disclosure, projection of the gate electrode on the back electrode is located at corresponding
In the range of the road plan.
In a kind of exemplary embodiment of the disclosure, the road plan is extended straight, and arranged in parallel.
In a kind of exemplary embodiment of the disclosure, the thin-film solar cells further include:
Flatness layer is equipped with the surface of the gate electrode set on the photoelectric conversion layer, and the flatness layer is isolation material, and
Its surface far from the gate electrode is plane.
In a kind of exemplary embodiment of the disclosure, the thin-film solar cells further include:
Encapsulated layer is set on the flatness layer.
In a kind of exemplary embodiment of the disclosure, the material of the encapsulated layer is metal oxide.
In a kind of exemplary embodiment of the disclosure, the back electrode is divided into the electrode at multiple intervals by the road plan
Unit.
In a kind of exemplary embodiment of the disclosure, the photoelectric conversion layer includes:
Photonic layer is set on the back electrode；
Window layer is set on the photonic layer.
According to one aspect of the disclosure, a kind of solar power generation component is provided, including thin described in above-mentioned any one
Film solar cell.
The solar power generation component and thin-film solar cells of the disclosure, due to foring multiple road plan on back electrode,
So that the region that photoelectric conversion layer corresponds to each road plan can accommodate in recessed road plan, formation accordingly when forming photoelectric conversion layer
Slot.Gate electrode can be formed in accommodation groove, in the case where not reducing gate electrode thickness, can be reduced gate electrode and be protruded from photoelectricity turn
The height for changing layer is convenient for encapsulating, and is conducive to improve packaging effect.
It should be understood that above general description and following detailed description be only it is exemplary and explanatory, not
The disclosure can be limited.
Detailed description of the invention
The drawings herein are incorporated into the specification and forms part of this specification, and shows the implementation for meeting the disclosure
Example, and together with specification for explaining the principles of this disclosure.It should be evident that the accompanying drawings in the following description is only the disclosure
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is the structural schematic diagram of thin-film solar cells in the related technology.
Fig. 2 is the structural schematic diagram of disclosure embodiment thin-film solar cells.
Fig. 3 is the flow chart of the preparation method of disclosure embodiment thin-film solar cells.
Fig. 4 is the flow chart of step S120 in Fig. 2.
Fig. 5 is the structural schematic diagram corresponding to step S110 in Fig. 3.
Fig. 6 is the structural schematic diagram corresponding to step S120 in Fig. 3.
Fig. 7 is the structural schematic diagram corresponding to step S130 in Fig. 3.
Fig. 8 is the structural schematic diagram corresponding to step S140 in Fig. 3.
In Fig. 1: 100, substrate；200, back electrode；300, photonic layer；400, Window layer；500, gate electrode.
In Fig. 2-Fig. 8: 1, substrate；2, back electrode；21, road plan；3, photoelectric conversion layer；301, accommodation groove；31, photonic layer；
32, Window layer；4, gate electrode；5, flatness layer；6, encapsulated layer.
Specific embodiment
Example embodiment is described more fully with reference to the drawings.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, thesing embodiments are provided so that this is practical new
Type will be full and complete, and the design of example embodiment is comprehensively communicated to those skilled in the art.It is identical in figure
Appended drawing reference indicates same or similar structure, thus the detailed description that will omit them.
Although the term of relativity, such as "upper" "lower" is used to describe a component of icon for another in this specification
The relativeness of one component, but these terms are in this manual merely for convenient, for example, with reference to the accompanying drawings described in show
The direction of example.It is appreciated that, if making it turn upside down the device overturning of icon, the component described in "upper" will
As the component in "lower".When certain structure is at other structures "upper", it is possible to refer to that certain structural integrity is formed in other structures
On, or refer to that certain structure is " direct " and be arranged in other structures, or refer to that certain structure is arranged by the way that another structure is " indirect " in other knots
On structure.
Term "one", " one ", "the" and " described " to indicate there are one or more elements/component part/etc.；With
Language " comprising " and " having " is to indicate the open meaning being included and refer to element/composition portion in addition to listing
Also may be present except divide/waiting other element/component part/etc..
In the related art, as shown in Figure 1, thin-film solar cells may include the substrate 100 being cascading, back electricity
Pole 200, photonic layer 300, Window layer 400 and gate electrode 500, wherein back electrode 200 is continuous flat laminated structure, gate electrode
500 quantity is multiple, and is directly arranged in surface of the Window layer 400 far from photonic layer 300, and the thickness of gate electrode 500 is grid
Electrode 500 protrudes from the height of Window layer 400, so that the height that gate electrode 500 protrudes maximizes, to reduce gate electrode
500 thickness may then will affect electric property, and manufacture difficulty increases, thus in the premise for not reducing by 500 thickness of gate electrode
Under, encapsulation difficulty is larger, and packaging effect is poor.
Disclosure embodiment also provides a kind of thin-film solar cells, as shown in Fig. 2, the thin-film solar cells can be with
Including substrate 1, back electrode 2, photoelectric conversion layer 3 and gate electrode 4, in which:
The material of substrate 1 can be glass, plastics, ceramics, graphite or metal etc., and it is special that shape and size are not done herein
It limits.
Back electrode 2 can be set to substrate 1, and have multiple road plan 21.
Photoelectric conversion layer 3 can be set to side of the back electrode 2 far from substrate 1, and photoelectric conversion layer 3 corresponds to the area of each road plan 21
The recessed corresponding road plan 21 in domain, to form multiple accommodation grooves 301.The depth of accommodation groove 301 can be identical as the depth of road plan 21,
In the case that road plan 21 penetrates back electrode 2 and exposes substrate 1, the depth of road plan 21 is the thickness of back electrode 2.
Photoelectric conversion layer 3 may include photonic layer 31 and Window layer 32, and photonic layer 31 may include light absorbing layer and buffer layer, light
Absorbed layer can be set on back electrode 2, and buffer layer can be set on light absorbing layer.Window layer 32 can be set on photonic layer 31.
Multiple gate electrodes 4 can be set in each accommodation groove 301 correspondingly, so as to not reduce by 4 thickness of gate electrode
In the case of, the height that gate electrode 4 protrudes from photoelectric conversion layer 3 is reduced, convenient for encapsulation.The thickness of gate electrode 4 can be with back electrode 2
Thickness is identical, so that the flush of gate electrode 4 and photoelectric conversion layer 3.Certainly, the thickness of gate electrode 4 is also greater than or is less than
The thickness of back electrode 2, so that gate electrode 4 can be higher or lower than the surface of photoelectric conversion layer 3, but due to gate electrode 4 at least one
Part is placed in accommodation groove 301, still can be to a certain degree even if gate electrode 4 can be higher or lower than the surface of photoelectric conversion layer 3
The upper height for reducing gate electrode 4 and protruding from photoelectric conversion layer 3, is conducive to encapsulate.
The thin-film solar cells of disclosure embodiment, due to foring multiple road plan 21 on back electrode 2, so that
When forming photoelectric conversion layer 3, the region that photoelectric conversion layer 3 corresponds to each road plan 21 can be recessed accordingly, form accommodation groove 301.
Gate electrode 4 can be formed in accommodation groove 301, in the case where not reducing by 4 thickness of gate electrode, can be reduced gate electrode 4 and be protruded from light
The height of electric conversion layer 3, is convenient for encapsulating, and is conducive to improve packaging effect.
As shown in Fig. 2, the thin-film solar cells of disclosure embodiment can also include flatness layer 5, flatness layer 5 can be set
In on the photoelectric conversion layer 3 for being formed with gate electrode 4, i.e., set on side of the photoelectric conversion layer 3 far from back electrode 2, and cover each grid
Electrode 4.The material of flatness layer 5 can be transparent insulating materials, such as transparent resin etc..It can make to be formed with by flatness layer 5
The photoelectric conversion layer 3 of gate electrode 4 planarizes, so as to subsequent encapsulation.
As shown in Fig. 2, the thin-film solar cells of disclosure embodiment can also include encapsulated layer 6, encapsulated layer 6 can be set
In on flatness layer 5, that is, it is set to side of the flatness layer 5 far from photoelectric conversion layer 3.The material of encapsulated layer 6 can be metal oxide,
Such as aluminium oxide, silica etc. pass through encapsulation it is, of course, also possible to be other materials that can be used for thin-film solar cells encapsulation
Layer 6 can play a protective role to the structure in thin-film solar cells.
Thin-film solar cells is carried out below with reference to the preparation method of disclosure embodiment thin-film solar cells detailed
Describe in detail bright, as shown in Figure 3 and Figure 6, which may include:
Step S110, back electrode 2 is formed on substrate 1, and back electrode 2 has multiple road plan 21.
Step S120, photoelectric conversion layer 3 is formed on back electrode 2, the region that photoelectric conversion layer 3 corresponds to each road plan 21 is recessed
Enter road plan 21, to form multiple accommodation grooves 301.
Step S130, gate electrode 4 is formed in each accommodation groove 301.
As shown in Figure 3 and Figure 5, in step s 110, the material of glass substrate 1 can be glass, plastics, ceramics, graphite
Or metal etc., shape and size do not do particular determination herein.The material of back electrode 2 can be Mo (molybdenum), it is of course also possible to be
Other metals or metallic compound.Each road plan 21 can be along linear extension, and multiple road plan 21 are arranged in parallel.Road plan 21 can be exposed
Substrate 1 cuts off back electrode 2, so that back electrode 2 be divided into the electrode unit at multiple intervals, to form multiple battery lists
Member.Certainly, road plan 21 is also possible to the groove being formed on back electrode 2, does not cut off back electrode 2.
Back electrode 2 can be formed on substrate 1 by sputtering or evaporation process, then delineate multiple road plan on the back electrode 2
21.Alternatively, also vapor deposition or sputtering technology can be cooperated directly to be formed on substrate 1 by mask plate has multiple road plan 21
Back electrode 2.Certainly, back electrode metal layer 2 can be also first formed on substrate 1, then each road plan 21 is formed by masking process, covered
Membrane process may include exposure, development and etching and etc., this will not be detailed here.
As shown in Figure 3 and Figure 6, in the step s 120, since back electrode 2 has multiple road plan 21, thus, forming photoelectricity
When conversion layer 3, photoelectric conversion layer 3 corresponds to the recessed road plan 21 in region of each road plan 21, to form accommodation groove 301.Accommodation groove 301
Depth can be identical as road plan 21, certainly, be also smaller than road plan 21.The case where road plan 21 penetrates back electrode 2 and exposes substrate 1
Under, the depth of road plan 21 can be identical as the thickness of back electrode 2.Certainly, road plan 21 can not also penetrate back electrode 2, and the disclosure is implemented
Back electrode 2 is only penetrated with road plan 21 in mode, is illustrated in case where exposing substrate 1.
Photoelectric conversion layer 3 may include photonic layer 31 and Window layer 32, wherein it is separate that photonic layer 31 can be set to back electrode 2
The side of substrate 1, and photonic layer 31 may include light absorbing layer and buffer layer, light absorbing layer can be located at back electrode 2 and buffer layer it
Between, the material of light absorbing layer can be CIS (copper indium selenide) etc.；The material of buffer layer can be CdS (cadmium sulfide) or ZnS (zinc sulphide)
Deng.Window layer 32 can be set to side of the photonic layer 31 far from back electrode 2, and material is transparent conductive material, such as ZnO (oxidation
Zinc), ITO (tin indium oxide) etc..
For example, as shown in figure 4, formation photoelectric conversion layer 3 may include:
Step S1210, photonic layer 31 is formed on back electrode 2.
Sputtering or evaporation process can be used and form photonic layer 31 far from the side of substrate 1 in back electrode 2, make photonic layer 31
Thickness it is more uniform.For example, light absorbing layer can be first formed on back electrode 2, then buffer layer is formed on light absorbing layer,
To obtain photonic layer 31.
Step S1220, Window layer 32 is formed on photonic layer 31.
Sputtering or evaporation process can be used and form Window layer 32 far from the side of back electrode 2 in photonic layer 31, window can be made
The thickness of mouth layer 32 is more uniform.For example, Window layer 32 can be formed far from the side of light absorbing layer in buffer layer.
As shown in Figure 3 and Figure 7, in step s 130, silk-screen printing can be used and form multiple gate electrodes 4, can also use
Mask plate cooperation evaporation process or cooperation sputtering technology form multiple gate electrodes 4, and but not limited to this, can also be initially formed grid electricity
Pole layer, then multiple gate electrodes 4 are formed by masking process.Meanwhile multiple gate electrodes 4 can be placed in each accommodating correspondingly
Slot 301, and each gate electrode 4 is without departing from the edge of corresponding accommodation groove 301, so that the area other than accommodation groove 301 will not be blocked
Domain, compared to the prior art in gate electrode for, daylighting area will not be reduced, thus can guarantee generating efficiency.Forming grid
When electrode 4, it can guarantee pair of printing screen or mask and back electrode 2 by forming the modes such as alignment mark on back electrode 2
Position precision, it is ensured that gate electrode 4, which is located at, to be accurately located in road plan 21.
The material of gate electrode 4 can be silver, aluminium or other metals, it is of course also possible to be other conductive materials.Meanwhile
When the depth of accommodation groove 301 is identical as the depth of road plan 21, the thickness of gate electrode 4 can be identical as the thickness of back electrode 2, so that grid
The flush of electrode 4 and photoelectric conversion layer 3.Certainly, the thickness of gate electrode 4 be also greater than or less than back electrode 2 thickness, make
The surface of photoelectric conversion layer 3 can be higher or lower than by obtaining gate electrode 4, but be placed in accommodation groove since gate electrode 4 is at least a part of
In 301, even if gate electrode 4 is higher or lower than the surface of photoelectric conversion layer 3, the protrusion of gate electrode 4 can be still reduced to a certain extent
In the height of photoelectric conversion layer 3, be conducive to encapsulate.
As shown in figures 3 and 8, the preparation method of the disclosure can also include:
Step S140, flatness layer 5 is formed on the photoelectric conversion layer 3 for being formed with the gate electrode 4, flatness layer 5 is
Isolation material, and its surface far from the photoelectric conversion layer 3 is plane.
Flatness layer 5 can be formed in side of the photoelectric conversion layer 3 far from back electrode 2, and cover each gate electrode 4, flatness layer 5
Material can be transparent insulating materials, such as transparent resin etc..It can make the photoelectricity for being formed with gate electrode 4 by flatness layer 5
Conversion layer 3 planarizes, even if can still form a smooth table even if gate electrode 4 is higher or lower than the surface of photoelectric conversion layer 3
Face so as to subsequent encapsulation, and can play the role of insulation.
As shown in Figure 2 and Figure 8, the preparation method of the disclosure can be with further include:
Step S150, encapsulated layer 6 is formed on flatness layer 5.
Encapsulated layer 6 can be formed in side of the flatness layer 5 far from gate electrode 4, and material can be metal oxide, such as oxygen
Change aluminium, silica etc., it is, of course, also possible to be other materials that can be used for thin-film solar cells encapsulation, can be risen by encapsulated layer 6
To protective effect.Since the height that gate electrode 4 protrudes from photoelectric conversion layer 3 is minimized, so that the formation of encapsulated layer 6 is more
It is convenient, packaging effect can be improved.Encapsulated layer 6 can be the encapsulating material layer formed by the modes such as depositing, coating, can also adopt
The encapsulating film attached with bonding or other techniques.
Disclosure embodiment also provides a kind of solar power generation component, which may include above-mentioned reality
Apply the thin-film solar cells of mode.The structure of the thin-film solar cells and the beneficial effect of solar power generation component can join
The thin-film solar cells in above embodiment is examined, this will not be detailed here.
For example, which can be the roof power generator using thin-film solar cells, can
To include thin-film solar cells, mounting rack, the control circuit etc. of above embodiment, mounting rack is securable to roof, film
Solar battery is mountable on the mounting rack, the solar power generation component, and control circuit can be used for receiving thin film solar electricity
The electric energy of pond generation is simultaneously exported to power grid.The solar power generation component can also be solar charger, and above-mentioned reality can be used
The thin-film solar cells for applying mode produces electricl energy.In addition, the solar power generation component, which can also be other, uses above-mentioned implementation
The power generator of mode thin-film solar cells, will not enumerate herein.
Those skilled in the art will readily occur to the disclosure after considering specification and practicing utility model disclosed herein
Other embodiments.This application is intended to cover any variations, uses, or adaptations of the disclosure, these modifications are used
Way or adaptive change follow the general principles of this disclosure and including the disclosure it is undocumented in the art known in
Common sense or conventional techniques.The description and examples are only to be considered as illustrative, and the true scope and spirit of the disclosure are by institute
Attached claim is pointed out.
Claims (10)
1. a kind of thin-film solar cells characterized by comprising
Substrate；
Back electrode is set to the substrate, and has multiple road plan；
Photoelectric conversion layer is set on the back electrode, and the photoelectric conversion layer corresponds to the recessed correspondence in region of each road plan
The road plan, to form accommodation groove；
Multiple gate electrodes are set in each accommodation groove correspondingly.
2. thin-film solar cells according to claim 1, which is characterized in that the thickness of the gate electrode and the back electrode
It spends identical.
3. thin-film solar cells according to claim 1, which is characterized in that the gate electrode is on the back electrode
Projection is located in the range of the corresponding road plan.
4. thin-film solar cells according to claim 1, which is characterized in that the road plan extends straight, and phase
Mutually it is arranged in parallel.
5. thin-film solar cells according to claim 1, which is characterized in that the thin-film solar cells further include:
Flatness layer is equipped with the surface of the gate electrode set on the photoelectric conversion layer, and the flatness layer is isolation material, and it is remote
Surface from the gate electrode is plane.
6. thin-film solar cells according to claim 5, which is characterized in that the thin-film solar cells further include:
Encapsulated layer is set on the flatness layer.
7. thin-film solar cells according to claim 6, which is characterized in that the material of the encapsulated layer is metal oxidation
Object.
8. thin-film solar cells according to claim 1, which is characterized in that the back electrode is divided by the road plan
The electrode unit at multiple intervals.
9. thin-film solar cells according to claim 1-8, which is characterized in that the photoelectric conversion layer packet
It includes:
Photonic layer is set on the back electrode；
Window layer is set on the photonic layer.
10. a kind of solar power generation component, which is characterized in that including the described in any item thin film solar electricity of claim 1-9
Pond.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821190659.8U CN208608207U (en) | 2018-07-25 | 2018-07-25 | Solar power generation component and thin-film solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821190659.8U CN208608207U (en) | 2018-07-25 | 2018-07-25 | Solar power generation component and thin-film solar cells |
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| CN208608207U true CN208608207U (en) | 2019-03-15 |
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| CN201821190659.8U Expired - Fee Related CN208608207U (en) | 2018-07-25 | 2018-07-25 | Solar power generation component and thin-film solar cells |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112838134A (en) * | 2021-01-25 | 2021-05-25 | 浙江上方电子装备有限公司 | Copper indium gallium selenide thin-film solar cell and preparation method thereof |
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2018
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112838134A (en) * | 2021-01-25 | 2021-05-25 | 浙江上方电子装备有限公司 | Copper indium gallium selenide thin-film solar cell and preparation method thereof |
| CN112838134B (en) * | 2021-01-25 | 2023-08-15 | 浙江上方电子装备有限公司 | Copper indium gallium selenium thin film solar cell and preparation method thereof |
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