CN208608190U - A kind of high thermal conductivity structure - Google Patents
A kind of high thermal conductivity structure Download PDFInfo
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- CN208608190U CN208608190U CN201820740142.5U CN201820740142U CN208608190U CN 208608190 U CN208608190 U CN 208608190U CN 201820740142 U CN201820740142 U CN 201820740142U CN 208608190 U CN208608190 U CN 208608190U
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- 239000010432 diamond Substances 0.000 claims abstract description 84
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 83
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 47
- 150000001875 compounds Chemical class 0.000 claims abstract description 42
- 230000006911 nucleation Effects 0.000 claims abstract description 7
- 238000010899 nucleation Methods 0.000 claims abstract description 7
- 230000002708 enhancing effect Effects 0.000 claims abstract description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 12
- 239000011435 rock Substances 0.000 claims description 11
- 229910005540 GaP Inorganic materials 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 229910000989 Alclad Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 150000002259 gallium compounds Chemical class 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- -1 aluminium arsenic Chemical compound 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- OUUQCZGPVNCOIJ-UHFFFAOYSA-N hydroperoxyl Chemical compound O[O] OUUQCZGPVNCOIJ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000002113 nanodiamond Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model provides a kind of high thermal conductivity structure, including gallium-containing compound layer and the diamond layer being arranged on the gallium-containing compound layer, gallium-containing compound layer is directly contacted with diamond layer, simultaneously, diamond layer Enhancing Nucleation Density is high, crystalline quality is good, it is high with the binding force of gallium-containing compound layer, there is excellent thermal conductivity.
Description
Technical field
The utility model relates to semiconductor fields, more particularly to a kind of high thermal conductivity structure.
Background technique
The gallium-containing compounds base semiconductor material such as gallium nitride, gallium phosphide big, direct gap, electronics drift with forbidden bandwidth
The features such as speed is fast has advantage in terms of making high-power, high-frequency electron device and photoelectric device.For example, gallium nitride master
It wants epitaxial growth on the substrates such as silicon, sapphire, but the thermal conductivity of these substrates is lower, seriously constrains dissipating for gallium nitride device
Heat, limit device service performance.
Diamond is highest Heat Conduction Material, and thermal coefficient is up to 2000W/ (mk), and its chemical property is stablized, and has
Big forbidden bandwidth selects for ideal substrate material.However, diamond Optimal growth temperature is 800 DEG C -1000 DEG C, herein
In temperature range, gallium-containing compound is reacted with active hydrogen plasma, and gallium-containing compound film is caused to decompose；If reducing diamond
Growth temperature, although the decomposition of gallium-containing compound can be reduced to a certain extent, chemical combination containing gallium in the environment of hydrogen plasma
The decomposition of object is inevitable, and under cryogenic, Growth Rate of Diamond is slow, the diamond quality deposited
Difference.
Therefore, how to overcome the problems, such as that the cracking of gallium-containing compound layer and diamond thin fall off, improve diamond
Crystalline quality and binding force with gallium-containing compound surface, to improve the problem of thermal conductivity efficiency is urgent need to resolve.
Utility model content
In view of this, the present invention provides a kind of high thermal conductivity structures, including gallium-containing compound layer and setting are in institute
The diamond layer on gallium-containing compound layer is stated, gallium-containing compound layer is directly contacted with diamond layer, meanwhile, diamond layer forming core is close
Degree is high, crystalline quality is good, high with the binding force of gallium-containing compound layer, has excellent thermal conductivity.
In a first aspect, the utility model provides a kind of high thermal conductivity structure, including gallium-containing compound layer and setting in institute
State the diamond layer on gallium-containing compound layer.
Optionally, the gallium-containing compound layer is gallium nitride layer, gallium phosphide layer, gallium arsenide layer, aluminum gallium arsenide layer, aluminium phosphatization
Layer or AlGaInP layer are sowed in gallium layer, indium nitridation.Further optional, the material of the gallium compound layer is gallium nitride layer.
Optionally, the gallium-containing compound layer with a thickness of 0.2 μm -1.4 μm.It is further alternative, the chemical combination containing gallium
Nitride layer with a thickness of 0.3 μm -1.0 μm.
Optionally, the diamond layer with a thickness of 1 μm -5 μm.It is further alternative, the diamond layer with a thickness of 1
μm-4μm.Specifically, the thickness of the diamond layer can with but be not limited to 1 μm, 1.7 μm, 2.2 μm, 3.5 μm, the Buddha's warrior attendant
The thickness of rock layers is set according to particular use.
Optionally, the opposite sides of the diamond layer is respectively arranged with multiple radiating fins, multiple radiating fins
Interval setting.Further alternative, the radiating fin is modeling alclad radiating fin, aluminium alloy radiating fin or ceramic heat-dissipating wing
Piece.
Optionally, the diamond layer includes the first diamond layer and the second diamond layer, second diamond layer position
Between the gallium-containing compound layer and first diamond layer, second diamond layer changes shape by diamond-like rock layers
At, second diamond layer with a thickness of 200nm-500nm.It is further alternative, second diamond layer with a thickness of
230nm-450nm.Specifically, the thickness of second diamond layer can be, but not limited to as 250nm-435nm, 275nm-
420nm or 290nm-400nm.
Optionally, the binding force of the gallium-containing compound layer and the diamond layer is 400N-1000N.
Optionally, the Enhancing Nucleation Density of diamond is (5-10) × 10 in the diamond layer10A/cm2。
Optionally, the thermal coefficient of the high thermal conductivity structure is 500W/ (mk) -1800W/ (mk).
The utility model has the beneficial effects that
A kind of high thermal conductivity structure provided by the utility model, wherein there is no cracking situation, diamonds for gallium-containing compound layer
Diamond nucleation density in layer is high；Gallium-containing compound layer is directly contacted with diamond layer, and binding force is high；Simultaneously because diamond
The radiating efficiency of the presence of layer, high thermal conductivity structure entirety improves.
Detailed description of the invention
Fig. 1 is the structural schematic diagram that the utility model implements a kind of high thermal conductivity structure provided；
Fig. 2 is the structural schematic diagram that the utility model implements another high thermal conductivity structure provided.
Specific embodiment
As described below is the preferred embodiment of the utility model embodiment, it is noted that for the general of the art
For logical technical staff, under the premise of not departing from the utility model embodiment principle, several improvements and modifications can also be made,
These improvements and modifications are also considered as the protection scope of the utility model embodiment.
Referring to Fig. 1, being a kind of structural schematic diagram of high thermal conductivity structure provided by the utility model, including gallium-containing compound
Layer 11 and the diamond layer 12 being arranged on gallium-containing compound layer 11.
In the present invention, the material of gallium-containing compound layer 11 is gallium nitride layer, gallium phosphide layer, gallium arsenide layer, aluminium arsenic
Layer or AlGaInP layer are sowed in change gallium layer, aluminum gallium phosphide layer, indium nitridation.Further optional, gallium compound layer 11 is nitridation
Gallium layer.
In the present invention, gallium-containing compound layer 11 with a thickness of 0.2 μm -1.4 μm.Optionally, gallium-containing compound layer
11 with a thickness of 0.3 μm -1.0 μm.
In the present invention, diamond layer 12 with a thickness of 1 μm -5 μm.Optionally, diamond layer 12 with a thickness of 1 μ
m-4μm.Specifically, the thickness of diamond layer 12 can with but be not limited to 1 μm, 1.7 μm, 2.2 μm, 3.5 μm, diamond layer
Thickness is set according to particular use.
In the present invention, more as shown in Fig. 2, the opposite sides of diamond layer 12 is provided with multiple radiating fins 13
The setting of a interval of radiating fin 13.Optionally, radiating fin 13 is that modeling alclad radiating fin, aluminium alloy radiating fin or ceramics dissipate
Hot fin.The relative position arrangement of the radiating fin 13 of the opposite sides setting of diamond layer 12 is not construed as limiting.Specifically, can
With but be not limited to 13 parallel arrangement of multiple radiating fins positioned at phase the same side, multiple radiating fins 13 of opposite sides can be with
Being symmetrical arranged asymmetric can also be arranged.
In the present invention, diamond layer 12 includes the first diamond layer and the second diamond layer, the second diamond layer
Between gallium-containing compound layer 11 and the first diamond layer, the second diamond layer is changed by diamond-like rock layers to be formed.Optionally,
Second diamond layer with a thickness of 200nm-500nm.It is further alternative, the second diamond layer with a thickness of 230nm-450nm.
Specifically, the thickness of the second diamond layer can be, but not limited to as 250nm-435nm, 275nm-420nm or 290nm-400nm.
In the present invention, the knot of the diamond thin Yu the hard alloy substrate is measured using rockwell indentation method
Resultant force is 400N-1000N；Using scanning electron microscope measure diamond in the diamond thin Enhancing Nucleation Density be (5-10) ×
1010A/cm2；The thermal coefficient of high thermal conductivity structure is 500W/ (mk) -1800W/ (mk).
The above-mentioned high thermal conductivity structure of the utility model can be used under type such as and prepare:
Substrate is provided, deposits gallium-containing compound layer over the substrate；
Using physical vapour deposition (PVD) on the gallium-containing compound layer depositing diamond-like layer；
The first diamond layer is deposited in the diamond-like rock layers using chemical vapor deposition, in the chemical vapor deposition
In the process, the diamond-like rock layers are changed into the second diamond layer；
The substrate is removed, high thermal conductivity structure is obtained.
In the present invention, substrate is silicon substrate, silicon carbide substrates, aluminium nitride substrate, zinc oxide substrate, GaAs lining
Bottom or Sapphire Substrate.
In the present invention, gallium-containing compound layer is deposited over the substrate, including the use of Metallo-Organic Chemical Vapor
Deposition, molecular beam epitaxy, liquid growth or vapor deposition deposit the gallium-containing compound layer over the substrate.The physical vapor is heavy
Product includes at least one of vacuum evaporation, ion film plating, magnetron sputtering, molecular beam epitaxy.The chemical vapor deposition includes
In aumospheric pressure cvd, low-pressure chemical vapor deposition, ultra-high vacuum CVD and hot-wire chemical gas-phase deposition
It is at least one.The removal substrate, including gone using laser lift-off technique, chemical stripping technology or epitaxial lift-off
Except the substrate.
In the present invention, the material of diamond-like rock layers is diamond-like, the amorphous mixed containing sp3 and sp2 key carbon
Metastable structure, in chemical vapor deposition processes, since depositing temperature is higher, hydrogen therein is changed into hydroperoxyl radical, with
Sp2 hydbridized carbon atoms react and form sp3 hydbridized carbon atoms.Therefore, while using CVDD layer, class
The sp2 hydridization of carbon atom is converted into sp3 hydridization in diamond layer, is accordingly changed into diamond, and diamond-like rock layers are changed into the second gold medal
Hard rock layer.It is diamond layer on gallium-containing compound layer, without diamond-like rock layers, gallium-containing compound after final deposition
Layer is directly contacted with the second diamond layer.Diamond layer includes the first diamond layer and the second diamond layer.
In the present invention, radiating fin is arranged in by the opposite two sides of diamond layer by stickup or welding procedure,
To more improve the thermal conductivity efficiency of the high thermal conductivity structure.
High thermal conductivity structure in one embodiment of the utility model can be used under type such as and prepare:
(1) sapphire (Al is provided2O3) substrate, sapphire is cleaned using acetone, then to be placed in dilute sulfuric acid and phosphoric acid mixed
It closes and is performed etching in liquid, is finally placed in ultrahigh vacuum cavity, the volatile materials of substrate surface is removed, Organometallic is utilized
It learns vapor deposition and prepares gallium nitride layer on sapphire.
(2) it successively uses ethyl alcohol, deionized water to be cleaned by ultrasonic 5min the Sapphire Substrate for being deposited with gallium nitride layer, removes table
The greasy dirt and dust in face, with being dried with nitrogen；Substrate after drying is placed in sputtering chamber and carries out magnetron sputtering.Sputtering environment is hydrogen
Gas argon gas mixed gas, hydrogen flowing quantity 10sccm, argon flow 20sccm, hydrogen and argon gas volume ratio are 1:2, chamber pressure
By force it is 28mtorr, operating voltage 500V, magnetron sputtering power 4kW, sputtering time 7min, the thickness of diamond-like is made
Degree is 250nm.
(3) sapphire for being deposited with diamond-like rock layers is placed in ethanol solution and cleans 5min, be placed in Zeta current potential about ±
It is ultrasonically treated 30min at ultrasonic power 2kW in 50mV, the nano-diamond powder suspension that partial size is 5nm and plant brilliant, nitrogen
Drying, which is placed in hot-wire chemical gas-phase deposition chamber, deposits the first diamond layer.Use tantalum wire as heated filament, diameter 0.5mm,
Total quantity is 9, and pumping chamber vacuum to 0.1Pa is hereinafter, be passed through mixed gas, wherein H2Flow is 800sccm, CH4Flow
24sccm, chamber pressure 3500Pa, growth power 6500W, depositing temperature are 800 DEG C, deposition rate 300nm/h, deposit 1h.
(4) Sapphire Substrate is removed using laser lift-off technique, obtains high thermal conductivity structure, including gallium nitride layer and diamond
Layer.The binding force that gallium nitride layer and diamond layer are measured using rockwell indentation method is 800N, measures diamond using scanning electron microscope
The Enhancing Nucleation Density of diamond is 7 × 10 in layer10A/cm2。
Gallium-containing compound layer, which is not present, in a kind of high thermal conductivity structure provided by the utility model cracks situation, in diamond layer
Diamond nucleation density；Gallium-containing compound layer is directly contacted with diamond layer, and binding force is high, improves the heat of high thermal conductivity structure
Efficiency is led, in semiconductor devices, especially semiconductor epitaxial layers with good application prospect.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed,
But it should not be understood as limiting the scope of the patent of the utility model.It should be pointed out that for the common of this field
For technical staff, without departing from the concept of the premise utility, various modifications and improvements can be made, these all belong to
In the protection scope of the utility model.Therefore, the scope of protection shall be subject to the appended claims for the utility model patent.
Claims (8)
1. a kind of high thermal conductivity structure, which is characterized in that including gallium-containing compound layer and be arranged on the gallium-containing compound layer
Diamond layer, the opposite sides of the diamond layer is respectively arranged with multiple radiating fins, multiple radiating fin intervals
Setting.
2. high thermal conductivity structure as described in claim 1, which is characterized in that the gallium-containing compound layer is gallium nitride layer, phosphatization
Layer or AlGaInP layer are sowed in gallium layer, gallium arsenide layer, aluminum gallium arsenide layer, aluminum gallium phosphide layer, indium nitridation.
3. high thermal conductivity structure as described in claim 1, which is characterized in that the gallium-containing compound layer with a thickness of 0.2 μm-
1.4 μm, the diamond layer with a thickness of 1 μm -5 μm.
4. high thermal conductivity structure as described in claim 1, which is characterized in that the radiating fin is modeling alclad radiating fin, aluminium
Alloy heat-sink fin or ceramic heat-dissipating fin.
5. high thermal conductivity structure as described in claim 1, which is characterized in that the diamond layer includes the first diamond layer and the
Two diamond layers, second diamond layer is between the gallium-containing compound layer and first diamond layer, and described
Two diamond layers are changed by diamond-like rock layers and are formed, second diamond layer with a thickness of 200nm-500nm.
6. high thermal conductivity structure as described in claim 1, which is characterized in that the gallium-containing compound layer and the diamond layer
Binding force is 400N-1000N.
7. high thermal conductivity structure as described in claim 1, which is characterized in that the Enhancing Nucleation Density of diamond is in the diamond layer
(5-10)×1010A/cm2。
8. high thermal conductivity structure as described in claim 1, which is characterized in that the thermal coefficient of the high thermal conductivity structure is 500W/
(m·k)-1800W/(m·k)。
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| CN111129184A (en) * | 2019-12-30 | 2020-05-08 | 长春理工大学 | A kind of high-efficiency heat dissipation semiconductor substrate and preparation method thereof |
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| CN111129184A (en) * | 2019-12-30 | 2020-05-08 | 长春理工大学 | A kind of high-efficiency heat dissipation semiconductor substrate and preparation method thereof |
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