CN208572543U - The multilayer circuit board of embedded radiator - Google Patents
The multilayer circuit board of embedded radiator Download PDFInfo
- Publication number
- CN208572543U CN208572543U CN201821189600.7U CN201821189600U CN208572543U CN 208572543 U CN208572543 U CN 208572543U CN 201821189600 U CN201821189600 U CN 201821189600U CN 208572543 U CN208572543 U CN 208572543U
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- China
- Prior art keywords
- conductive pattern
- pattern layer
- layer
- circuit board
- multilayer circuit
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- 239000010410 layer Substances 0.000 claims abstract description 112
- 229910052751 metal Inorganic materials 0.000 claims abstract description 81
- 239000002184 metal Substances 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 230000005855 radiation Effects 0.000 claims abstract description 21
- 239000000919 ceramic Substances 0.000 claims abstract description 17
- 239000012792 core layer Substances 0.000 claims abstract description 10
- 238000009792 diffusion process Methods 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 description 11
- 238000003466 welding Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- LAXBNTIAOJWAOP-UHFFFAOYSA-N 2-chlorobiphenyl Chemical compound ClC1=CC=CC=C1C1=CC=CC=C1 LAXBNTIAOJWAOP-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 101710149812 Pyruvate carboxylase 1 Proteins 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Structure Of Printed Boards (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
The utility model relates to a kind of multilayer circuit boards of embedded radiator, comprising: double-sided PCB, the first conductive pattern layer and the second conductive pattern layer for having insulative core layer, being located at insulative core layer lower surface and upper surface；Insulating substrate is connect with double-sided PCB, and the top of the second conductive pattern layer is arranged in；The upper surface side of insulating substrate is arranged in third conductive pattern layer；Insulating radiation device is arranged in insulating substrate and runs through insulating substrate；Insulating radiation device includes ceramic body and the first connection metal layer that two apparent surface of ceramic body is arranged in and the second connection metal layer, and the first connection metal layer is connect with the second conductive pattern layer；Metal component is arranged in insulating substrate and runs through insulating substrate；The lower surface of metal component is connect with the second conductive pattern layer.The multilayer circuit board of the utility model is equipped at least three layers of conductive pattern, and has insulating radiation device and metal component simultaneously, is easy to implement miniaturization and use scope is extensive.
Description
Technical field
The utility model relates to field of circuit boards；More specifically, the utility model relates to a kind of embedded insulating radiation devices
Multilayer circuit board.
Background technique
Such as LED chip/lamp bead, thyristor, GTO (gate level turn-off thyristor), GTR (power transistor), MOSFET
The various semiconductor devices of (electric power field effect transistor), IGBT (insulated gate bipolar transistor) and Power Diode Pumped etc. are usually sharp
Use circuit board as installation support plate, these semiconductor devices would generally generate heat during the work time, to avoid heat from gathering
It forms high temperature and influences its performance, need to be exported heat caused by semiconductor devices in time as circuit board.
Chinese patent literature CN 102202459A discloses a kind of circuit board with metal micro-radiator comprising one
Conventional printed circuit boards and the metal back layer for being set to the conventional printed circuit boards lower surface, the conventional printed circuit boards it is upper
Surface is equipped with layers of copper route, and the upper surface of metal back layer is equipped with one or more micro- heat dissipations of metal being linked together with metal back layer
Device, the one or more metal micro-radiator protrude from metal back layer surface and are correspondingly embedded in one through conventional printed circuit boards
In a or multiple cylindricality through-holes, layers of copper route set by the end face of metal micro-radiator and the upper surface of conventional printed circuit boards it
Between there are spacing so that metal micro-radiator and the layers of copper route electric insulation.
Only surface is equipped with conducting wire, the layout area of conducting wire to circuit board disclosed in above patent document on it
Big and cabling is by larger limitation；In addition, metal micro-radiator is connected with metal back layer, it is difficult to meet half in certain applications
Requirement of the conductor device to circuit board proof voltage energy, use scope are limited.
Summary of the invention
In view of the deficiencies of the prior art, the main purpose of the utility model is to provide one kind and is easy to implement miniaturization and has
Excellent heat dispersion performance and the circuit board that range is more widely used.
In order to realize above-mentioned main purpose, the utility model provides a kind of multilayer circuit board of embedded radiator, packet
It includes:
Double-sided PCB, including insulative core layer, positioned at the first conductive pattern layer of insulative core layer lower surface and positioned at insulation
Second conductive pattern layer of sandwich layer upper surface；
Insulating substrate is connect with double-sided PCB, and the top of the second conductive pattern layer is arranged in；
The upper surface side of insulating substrate is arranged in third conductive pattern layer；
Insulating radiation device is arranged in insulating substrate and runs through insulating substrate；Insulating radiation device includes ceramic body and sets
It sets and connects metal layer and the second connection metal layer the first of two apparent surface of ceramic body, the first connection metal layer is led with second
The connection of electrograph pattern layer；
Metal component is arranged in insulating substrate and runs through insulating substrate；The lower surface of metal component and the second conductive pattern
Pattern layer connection.
A kind of specific embodiment according to the present utility model, first connection metal layer and the second conductive pattern layer between with
And it is welded to connect between the lower surface and the second conductive pattern layer of metal component.
Another specific embodiment according to the present utility model, third conductive pattern layer include the upper table for covering metal component
Face and the first connection pad for extending laterally to insulating substrate.Thus, it is possible to clever according to the needs of institute's mounting semiconductor
The bonding area of first connection pad is set livingly.Wherein, the first connection pad can be thermal land or conductive welding disk.
In above-mentioned technical proposal, the first connection pad can be conductive welding disk, and metal component is also used as third conductive pattern
Conductive channel between layer and the second conductive pattern layer, to simplify the electricity between third conductive pattern layer and the second conductive pattern layer
Connection structure.
Another specific embodiment according to the present utility model, the second conductive pattern layer include conducting wire region and with
The thermal diffusion region of metal component connection, electrically isolates between conducting wire region and thermal diffusion region.
Preferably, the part edge in thermal diffusion region is exposed to the side of multilayer circuit board, in order in thermal diffusion region
Heat diffusion, further increase the heat dissipation performance of circuit board.
Another specific embodiment according to the present utility model, third conductive pattern layer include being arranged in the insulating radiation
The one or more second of device upper surface connects pad.Second connection pad can be thermal land or conductive welding disk.
Another specific embodiment according to the present utility model, second connection metal layer and third conductive pattern layer between with
And it is electrically isolated between metal component and third conductive pattern layer；The upper surface of second connection metal layer and third conductive pattern layer
Upper surface flush, the upper surface flush of the upper surface of metal component and third conductive pattern layer.
Another specific embodiment according to the present utility model, the first connection metal layer and the second connection metal layer packet
Include layers of copper.
Another specific embodiment according to the present utility model, the material of ceramic body are silicon nitride ceramics or aluminium nitride,
The material of metal component is copper.
The multilayer circuit board of the utility model is equipped at least three layers of conductive pattern, wiring side needed for reducing conducting wire
Product, and cabling is flexible, is conducive to the miniaturization of circuit board, and reduces board design difficulty.
In addition, the multilayer circuit board of the utility model is equipped with insulating radiation device and metal component simultaneously, excellent heat dissipation performance, and
Being adapted to demand of the different semiconductor devices to installation support plate (such as can be installed to insulating radiation device for certain semiconductor devices
On, other semiconductor devices are installed on metal component), so that its can application range it is more extensive.
It is with reference to the accompanying drawing and specific real in order to more clearly illustrate the purpose of this utility model, technical solution and advantage
Applying mode, the utility model is described in further detail.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model multilayer circuit board embodiment 1；
Fig. 2 is the structural schematic diagram of the utility model multilayer circuit board embodiment 2；
Fig. 3 is the structural schematic diagram of the utility model multilayer circuit board embodiment 3；
Fig. 4 is the structural schematic diagram of the utility model multilayer circuit board embodiment 4；
Fig. 5 is the structural schematic diagram of the utility model multilayer circuit board embodiment 5.
Specific embodiment
Embodiment 1
Referring to Fig. 1, the multilayer circuit board of embodiment 1 includes double-sided PCB 1, double-sided PCB 1 have insulative core layer 10,
The first conductive pattern layer 11 positioned at 10 lower surface of insulative core layer and the second conductive pattern layer 12 positioned at insulative core layer upper surface；
Second conductive pattern layer 12 includes conducting wire region 121 (for conducting electric current, and assisting carrying out heat diffusion) and thermal diffusion
Region 122 (is only used for the diffusion of heat and non-conducting electric current).Between conducting wire region 121 and thermal diffusion region 122 electrically
Isolation, the part edge in thermal diffusion region 122 are exposed to the side of multilayer circuit board.
Insulating substrate 2 is connect with double-sided PCB 1, and the top of the second conductive pattern layer 12 is arranged in；Insulating substrate 2 wraps
The organic insulating medium layer 21 and binding material 22 of such as FR-4 plate or BT plate are included, binding material 22 is for example consolidated by prepreg
Change and is formed.The upper surface side of insulating substrate 2 is provided with third conductive pattern layer 5.Conducting wire region 121 can pass through conduction
Via hole (not shown) and the first conductive pattern layer 11 and/or third conductive pattern layer 5 are electrically connected.
Insulating radiation device 3 is arranged in insulating substrate 2 and runs through insulating substrate 2；Insulating radiation device 3 includes ceramic body
31, the first connection metal layer 32 that 31 lower surface of ceramic body is set and the second connection that 31 upper surface of ceramic body is set
Metal layer 33 is welded to connect between first connection metal layer 32 and conducting wire region 121.The material of ceramic body 31 is for example
The various ceramics of silicon nitride ceramics, aluminium nitride, aluminium oxide, silicon carbide etc.；First connection metal layer 32 and the second connection metal layer
33 can only include layers of copper, can further include be arranged between layers of copper and ceramic body 31 intermediate metal layer (such as
Titanium layer).
The material of metal component 4 is copper, is arranged in insulating substrate 2 and runs through insulating substrate 2, to be formed through insulation
The passage of heat of substrate 2；It is welded to connect between the lower surface and thermal diffusion region 122 of metal component 4.Metal component 4 and third
It is electrically isolated between conductive pattern layer 5 and between the second connection metal layer 32 and third conductive pattern layer 5, the second connection metal
The upper surface of layer 33 and the upper surface flush of third conductive pattern layer 5, and the upper surface of metal component 4 and third conductive pattern
The upper surface flush of layer 5.Semiconductor devices (not shown) can be mounted directly to the second connection metal layer 33 and metal
The upper surface of component 4.
Embodiment 2
As shown in Fig. 2, embodiment 2 the difference from embodiment 1 is that: third conductive pattern layer 15 include covering metal component
4 upper surface simultaneously extends laterally to the first connection pad 152 of 2 upper surface of insulating substrate and covers the upper of insulating radiation device 3
Surface and the second connection pad 151 for extending laterally to 2 upper surface of insulating substrate, the first connection pad 152 and the second connection weldering
Disk 151 can be used for mounting semiconductor.Second connection pad 151, which can be thermal land, (only has thermally conductive function, with the
Other conducting wires of three conductive pattern layers 15 electrically isolate) or conductive welding disk (also there is thermally conductive function on the basis of conduction,
It is electrically connected with other conducting wires of third conductive pattern layer 15), the first connection pad 152 is conductive welding disk.
In addition, not including the thermal expansion being connect in embodiment 1 with metal component 4 in the second conductive pattern 12 in embodiment 2
Dissipate region 122；That is, the thermal diffusion region 122 of embodiment 1 is similarly formed as conducting wire in example 2.Metal component 4 with
The conducting wire region of second conductive pattern layer 12 connects, and metal component 4 is also conductive as third other than as passage of heat
Conductive channel between pattern layer 15 and the second conductive pattern layer 12.
Embodiment 3
As shown in figure 3, embodiment 3 the difference from embodiment 1 is that: third conductive pattern layer 25 include covering metal component
4 upper surface simultaneously extends laterally to the first connection pad 252 of 2 upper surface of insulating substrate and covers the upper of insulating radiation device 3
Surface and the second connection pad 251 for extending laterally to 2 upper surface of insulating substrate, the first connection pad 152 and the second connection weldering
Disk 151 can be used for mounting semiconductor.Second connection pad 151, which can be thermal land, (only has thermally conductive function, with the
Other conducting wires of three conductive pattern layers 25 electrically isolate) or conductive welding disk (also there is thermally conductive function on the basis of conduction,
It is electrically connected with other conducting wires of third conductive pattern layer 25), the first connection pad 152 is thermal land, metal component 4
Passage of heat is established between the first connection pad 252 and thermal diffusion region 122.
Embodiment 4
As shown in figure 4, third conductive pattern layer 35 includes the upper surface of covering metal component 4 and laterally prolongs in embodiment 4
It extends to the first connection pad 352 of 2 upper surface of insulating substrate and insulation is extended laterally to by the upper surface of insulating radiation device 3
Two second connection pads 351 of 2 upper surface of substrate, the first connection pad 352 and the second connection pad 351 can be used for installing
Semiconductor devices.Second connection pad 351 is that conductive welding disk (also has thermally conductive function, with third conduction on the basis of conduction
Other conducting wires of pattern layer 35 are electrically connected), the first connection pad 352 is thermal land, and metal component 4 is in the first connection
Passage of heat is established between pad 352 and thermal diffusion region 122.
Embodiment 5
As shown in figure 5, third conductive pattern layer 45 includes being laterally extended by the upper surface of insulating radiation device 3 in embodiment 5
To 2 upper surface of insulating substrate positive conductive pad 451 and negative conductive pad 453 and the upper of insulating radiation device 3 is set
The thermal land 452 on surface；In other embodiments, thermal land 452 can also further extend laterally to insulating substrate 2
Upper surface.
Third conductive pattern layer 45 further includes covering the upper surface of metal component 4 and extending laterally to table on insulating substrate 2
The thermal land 454 in face, metal component 4 establish passage of heat between thermal land 454 and thermal diffusion region 122.
Embodiment 6
Embodiment 6 the difference from embodiment 1 is that: do not include the heat being connect with metal component 4 in the second conductive pattern 12
Diffusion zone 122；That is, the thermal diffusion region 122 of embodiment 1 is similarly formed as conducting wire, metal component 4 in embodiment 6
It is electrically connected with the conducting wire, simultaneously as thermally conductive and conductive channel.
It is readily appreciated that, an insulating radiation device 3 and a metal component 4 is illustrated only in circuit board described in attached drawing,
But the quantity of insulating radiation device 3 and metal component 4 can according to need and flexibly set.In other circuits of the utility model
In plate embodiment, other inner layer conductive routes can be further set in insulating substrate.
Although depicting the utility model above by preferred embodiment, but it is to be understood that, ordinary skill
Personnel are all according to improving on an equal basis made by the utility model in the invention scope for not departing from the utility model, should be practical
Novel protection scope is covered.
Claims (10)
1. a kind of multilayer circuit board of embedded radiator, characterized by comprising:
Double-sided PCB, with insulative core layer, positioned at the first conductive pattern layer of the insulative core layer lower surface and positioned at described
Second conductive pattern layer of insulative core layer upper surface；
Insulating substrate is connect with the double-sided PCB, and the top of second conductive pattern layer is arranged in；
The upper surface side of the insulating substrate is arranged in third conductive pattern layer；
Insulating radiation device is arranged in the insulating substrate and runs through the insulating substrate；The insulating radiation device includes ceramics
Ontology and the first connection metal layer and the second connection metal layer for being separately positioned on two apparent surface of ceramic body, described the
One connection metal layer is connect with second conductive pattern layer；
Metal component is arranged in the insulating substrate and runs through the insulating substrate；The lower surface of the metal component and institute
State the connection of the second conductive pattern layer.
2. the multilayer circuit board of embedded radiator as described in claim 1, it is characterised in that: the first connection metal layer and institute
State between the second conductive pattern layer and the lower surface of the metal component and second conductive pattern layer between be welded to connect.
3. the multilayer circuit board of embedded radiator as described in claim 1, it is characterised in that: the third conductive pattern layer includes
It covers the upper surface of the metal component and extends laterally to the first connection pad of the insulating substrate upper surface.
4. the multilayer circuit board of embedded radiator as claimed in claim 3, it is characterised in that: the first connection pad is conduction
Pad, the metal component are also used as the conductive channel between the third conductive pattern layer and second conductive pattern layer.
5. the multilayer circuit board of embedded radiator as described in claim 1, it is characterised in that: second conductive pattern layer includes
Conducting wire region and the thermal diffusion region being connect with the metal component, the conducting wire region and the thermal diffusion zone
It is electrically isolated between domain.
6. the multilayer circuit board of embedded radiator as claimed in claim 5, it is characterised in that: the part side in the thermal diffusion region
Edge is exposed to the side of the multilayer circuit board.
7. the multilayer circuit board of embedded radiator as described in claim 1, it is characterised in that: the third conductive pattern layer includes
The one or more second that insulating radiation device upper surface is arranged in connects pad.
8. the multilayer circuit board of embedded radiator as described in claim 1, it is characterised in that: the second connection metal layer and institute
State between third conductive pattern layer and the metal component and the third conductive pattern layer between electrically isolate；Described second
Connect the upper surface of metal layer and the upper surface flush of the third conductive pattern layer, the upper surface of the metal component and institute
State the upper surface flush of third conductive pattern layer.
9. the multilayer circuit board of embedded radiator as described in claim 1, it is characterised in that: the first connection metal layer and institute
Stating the second connection metal layer includes layers of copper.
10. the multilayer circuit board of embedded radiator as described in claim 1, it is characterised in that: the material of the ceramic body is
Silicon nitride ceramics or aluminium nitride, the material of the metal component are copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821189600.7U CN208572543U (en) | 2018-07-24 | 2018-07-24 | The multilayer circuit board of embedded radiator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821189600.7U CN208572543U (en) | 2018-07-24 | 2018-07-24 | The multilayer circuit board of embedded radiator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208572543U true CN208572543U (en) | 2019-03-01 |
Family
ID=65448068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821189600.7U Active CN208572543U (en) | 2018-07-24 | 2018-07-24 | The multilayer circuit board of embedded radiator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208572543U (en) |
-
2018
- 2018-07-24 CN CN201821189600.7U patent/CN208572543U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Hengqin Financial Investment International Finance Leasing Co.,Ltd. Assignor: RAYBEN TECHNOLOGIES (ZHUHAI) Ltd. Contract record no.: X2022980020419 Denomination of utility model: Multilayer circuit board with built-in heat sink Granted publication date: 20190301 License type: Exclusive License Record date: 20221108 |
|
| EE01 | Entry into force of recordation of patent licensing contract | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Multilayer circuit board with built-in heat sink Effective date of registration: 20221111 Granted publication date: 20190301 Pledgee: Hengqin Financial Investment International Finance Leasing Co.,Ltd. Pledgor: RAYBEN TECHNOLOGIES (ZHUHAI) Ltd. Registration number: Y2022980021699 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| EC01 | Cancellation of recordation of patent licensing contract |
Assignee: Hengqin Financial Investment International Finance Leasing Co.,Ltd. Assignor: RAYBEN TECHNOLOGIES (ZHUHAI) Ltd. Contract record no.: X2022980020419 Date of cancellation: 20240118 |
|
| EC01 | Cancellation of recordation of patent licensing contract | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20190301 Pledgee: Hengqin Financial Investment International Finance Leasing Co.,Ltd. Pledgor: RAYBEN TECHNOLOGIES (ZHUHAI) Ltd. Registration number: Y2022980021699 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right |