CN208520478U - A kind of optothermal detector of detectable optical field distribution - Google Patents

A kind of optothermal detector of detectable optical field distribution Download PDF

Info

Publication number
CN208520478U
CN208520478U CN201821291494.3U CN201821291494U CN208520478U CN 208520478 U CN208520478 U CN 208520478U CN 201821291494 U CN201821291494 U CN 201821291494U CN 208520478 U CN208520478 U CN 208520478U
Authority
CN
China
Prior art keywords
thermo
field distribution
thickness
optical field
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201821291494.3U
Other languages
Chinese (zh)
Inventor
不公告发明人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhongshan Technology Technology Co Ltd
Original Assignee
Zhongshan Technology Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhongshan Technology Technology Co Ltd filed Critical Zhongshan Technology Technology Co Ltd
Priority to CN201821291494.3U priority Critical patent/CN208520478U/en
Application granted granted Critical
Publication of CN208520478U publication Critical patent/CN208520478U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

The utility model relates to a kind of optothermal detectors of detectable optical field distribution, including thermo-responsive line, positive/negative electrode is provided at left and right sides of the thermo-responsive line, the thermo-responsive line upper surface is additionally provided with multiple holes, the upper surface of the thermo-responsive line is also covered with light absorbing layer, and the thermo-responsive line is provided with and the multiple and one-to-one detection electrode of hole on one side;The optothermal detector of detectable optical field distribution, solve the problems, such as that optothermal detector can not carry out the detection of optical field distribution, by in thermo-responsive line, prepare hole, and in thermo-responsive line and hole surface light absorbing layer, the light absorbed can be converted into thermal energy faster and more, to improve the detection sensitivity to light, and it is provided with the detection electrode that can detect each hole luminous intensity, when practical application, the size of current of each detection electrode of acquisition can be passed through, to react the light intensity at each hole, to summarize the optical field distribution situation of entire hole overlay area out.

Description

A kind of optothermal detector of detectable optical field distribution
Technical field
The present invention relates to photodetector technical fields, and in particular to a kind of optothermal detector of detectable optical field distribution.
Background technique
The physical effect of photodetector is generally divided into photon effect and photo-thermal effect, and corresponding detector is referred to as light Subtype detector and photo-thermal type detector.The common trait of various photon type detectors is using semiconductor energy carrying material, photon Energy has generated directly effect to photoelectronic in detection material, therefore photon type detector has cut-off response frequency or wavelength, And spectral response is limited to a certain wave band, therefore different material systems determines that detector has different response wave length scopes, Generally it is difficult to use in wide range or multispectral section of detection.Photo-thermal type detector is not caused directly after absorbing optical radiation energy The change of internal electron state, but the luminous energy of absorption is become the energy of thermal motion of lattice, cause detecting element temperature to rise, It changes so as to cause the electrical properties of detecting element or other physical properties, therefore the size of photo-thermal effect and photon energy does not have There is direct relation, photo-thermal type detector is in principle to frequency without selectivity.Due to infrared band especially in LONG WAVE INFRARED with The photo-thermal effect of upper wave band becomes apparent from compared to Uv and visible light, therefore optothermal detector is commonly used in the spy of middle long wave optical radiation It surveys, typical photo-thermal type detector includes the types such as micro-metering bolometer, pyroelectric detector and thermocouple detector.Due to temperature Raising is the effect of heat accumulation, and the general response speed of thermal detector based on photo-thermal effect is slower, in millisecond magnitude.
However, existing optothermal detector be primarily used to detection light intensity, main improvement direction also embody be In terms of the intensity for the light how to detect, the detection of optical field distribution can not be carried out.
Summary of the invention
In view of the above-mentioned problems, present invention aim to address optothermal detectors can not carry out asking for the detection of optical field distribution Topic.
For this purpose, the present invention provides a kind of optothermal detector of detectable optical field distribution, including thermo-responsive line, the temperature-sensitive It is provided with positive/negative electrode at left and right sides of sense line, multiple holes are additionally provided with above the thermo-responsive line, the thermo-responsive line Upper surface is covered with light absorbing layer, and the thermo-responsive line is provided with and the multiple and one-to-one detection electrode of hole on one side.
The set-up mode of described hole is to be alternatively arranged along thermo-responsive line extending direction, and the detection electrode is set to The side of thermo-responsive line.
Described hole is square matrix arrangement, and conductive plate is provided between thermo-responsive line and positive/negative electrode, the detection electricity Pole is set to the bottom surface of thermo-responsive line.
The light absorbing layer is the nano-particle layer that gold, silver are formed.
The light absorbing layer be multilayered structure, by it is lower and on be followed successively by glassy layer, layers of chrome, germanium layer, silicon layer, titanium dioxide Layer, bifluoride magnesium.
The glassy layer with a thickness of 20~150nm, the layers of chrome with a thickness of 150~250nm, the germanium with a thickness of 25~45nm, the silicon layer with a thickness of 25~45nm, the titanium dioxide layer with a thickness of 40~60nm, the bifluoride magnesium With a thickness of 100~150nm.
The glassy layer with a thickness of 35nm, the layers of chrome with a thickness of 210nm, the germanium layer with a thickness of 35nm, institute State the thickness 35nm of silicon layer, the titanium dioxide layer with a thickness of 55nm, the bifluoride magnesium with a thickness of 120nm.
The thermo-responsive wire material includes VOx, Si, SiGe, YBCO or NiO.
Beneficial effects of the present invention: the optothermal detector of this detectable optical field distribution provided by the invention solves photo-thermal Detector can not carry out the problem of detection of optical field distribution, by thermo-responsive line, preparing hole, and in thermo-responsive line and hole Hole surface light absorbing layer, the light absorbed can be converted into thermal energy faster and more, so that the detection sensitivity to light is improved, and And be provided with and can detect the detection electrode of each hole luminous intensity, when practical application, it is electric that each detection of acquisition can be passed through The size of current of pole, so that the light intensity at each hole is reacted, to summarize the optical field distribution shape of entire hole overlay area out Condition.
The present invention is described in further details below with reference to attached drawing.
Detailed description of the invention
Fig. 1 is the optothermal detector structure top view of detectable optical field distribution.
Fig. 2 is the optothermal detector side view of detectable optical field distribution.
Fig. 3 is the optothermal detector structure top view two of detectable optical field distribution.
Fig. 4 is metal nanoparticle various metals combination schematic diagram of a layer structure.
In figure: 1, thermo-responsive line;2, hole;3, light absorbing layer;4, positive/negative electrode;5, detection electrode;6, conductive plate; 301, glassy layer;302, layers of chrome;303, germanium layer;304, silicon layer;305, titanium dioxide layer;306, bifluoride magnesium.
Specific embodiment
Reach the technical means and efficacy that predetermined purpose is taken for the present invention is further explained, below in conjunction with attached drawing and reality Example is applied to a specific embodiment of the invention, structure feature and its effect, detailed description are as follows.
Embodiment 1
In order to solve the problems, such as that optothermal detector can not carry out the detection of optical field distribution.The present invention provides a kind of detectable The left and right sides of the optothermal detector of optical field distribution, including thermo-responsive line 1, the thermo-responsive line 1 is provided with positive/negative electrode 4, should Positive/negative electrode 4 is for accessing external detection power supply, thus power supply needed for providing optical field distribution detection;The thermo-responsive line 1 Upper surface is additionally provided with multiple holes 2, and the upper surface of the thermo-responsive line 1 is covered with light absorbing layer 3, and light absorbing layer 3 not only covers Thermo-responsive 1 upper surface of line is covered, and also covers the surface of hole 2, in this manner it is possible to which make light is irradiated to thermo-responsive line 1 Upper surface has good absorptivity;Being provided on one side for the thermo-responsive line 1 is detected with multiple with hole 2 correspondingly Electrode 5, the detection electrode 5 can receive the light field signal at each hole 2, according to the electric signal received at each hole (mainly current signal/voltage signal) judges the power of light field.
In conclusion the optothermal detector of the detectable optical field distribution, is by detecting different light fields to thermo-responsive line 1 Change in resistance cause different influences, thus detect the power supply that thermo-responsive line 1 is loaded voltage or current variation, come Detect the variation of light field.When practical application, positive/negative electrode 4 is electrically connected external power supply, detection electrode 5 and external light field The signal detection end of compartment system, for identifying the electric signal at each detection electrode 5, to draw or show light Field pattern.Above-mentioned external optical field distribution system, major function are to collect the letter of the optothermal detector of detectable optical field distribution Number, and corresponding signal is handled, it is then shown as optical field distribution figure, main comprising modules include signal input End, signal processing module, controller and signal display module;The optical field distribution system is detected using existing optical field distribution System, the present embodiment are no longer described in detail.
In addition, point of line detection light field point-blank can be set into the optothermal detector of the detectable optical field distribution Mode for cloth, as shown in Figure 1 and Figure 2, the set-up mode of described hole 2 are to be alternatively arranged along thermo-responsive 1 extending direction of line, institute State the side that detection electrode 5 is set to thermo-responsive line 1.
Also the distribution mode of line detection light field in one plane can be set into, as shown in figure 3, described hole 2 is side Battle array arrangement, at this time needs to be provided with conductive plate 6 between thermo-responsive line 1 and positive/negative electrode 4, to ensure that hole 2 is applied External voltage more stable equilibrium, the detection electrode 5 is set to the bottom surface of thermo-responsive line 1, in this way can be more in aspect State the acquisition that signal detection end carries out several electric signals.
The light absorbing layer 3 is the nano-particle layer that gold, silver are formed.
As shown in figure 4, the light absorbing layer 3 be multilayered structure, by it is lower and on be followed successively by glassy layer 301, layers of chrome 302, germanium Layer 303, silicon layer 304, titanium dioxide layer 305, bifluoride magnesium 306;The light absorbing layer 3 by it is lower and on to incident light have it is different Refractive index, so that integrally to the absorptivity of light 90~100%, in this manner it is possible to improve the efficiency of detection optical field distribution And accuracy rate.
Absorption in order to ensure light absorbing layer 3 to incident light, the glassy layer 301 with a thickness of 20~150nm, the chromium Layer 302 with a thickness of 150~250nm, the germanium layer 303 with a thickness of 25~45nm, the silicon layer 304 with a thickness of 25~ 45nm, the titanium dioxide layer 305 with a thickness of 40~60nm, the bifluoride magnesium 306 with a thickness of 100~150nm.
It is preferential, above-mentioned glassy layer 301 with a thickness of 35nm, the layers of chrome 302 with a thickness of 210nm, the germanium layer 303 With a thickness of 35nm, the thickness 35nm of the silicon layer 304, the titanium dioxide layer 305 with a thickness of 55nm, the bifluoride magnesium 306 with a thickness of 120nm.
The material of the thermo-responsive line 1 mainly includes VOx, Si, SiGe, YBCO or NiO, and the material of thermo-responsive line 1 is wanted For fuel factor change in resistance can occur for Seeking Truth, and above-mentioned material generally has relatively high temperature-coefficient of electrical resistance (TCR), Its absolute value be greater than 1%/DEG C;In addition, existing other temperature-sensitives for perceiving thermal change such as existing pyroelectricity material, thermocouple Sense material can also serve as the making material of thermo-responsive line 1.
In conclusion the optothermal detector of this detectable optical field distribution provided in this embodiment, solves optothermal detector The problem of can not carrying out the detection of optical field distribution, by thermo-responsive line 1, preparing hole 2, and in thermo-responsive line 1 and hole 2 Surface light absorbing layer 3, the light absorbed can be converted into thermal energy faster and more, so that the detection sensitivity to light is improved, and And be provided with and can detect the detection electrode 5 of each 2 luminous intensity of hole, when practical application, each detection of acquisition can be passed through The size of current of electrode 5, so that the light intensity at each hole 2 is reacted, to summarize the light field point of entire 2 overlay area of hole out Cloth situation.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention Protection scope.

Claims (8)

1. a kind of optothermal detector of detectable optical field distribution, it is characterised in that: including thermo-responsive line (1), the thermo-responsive line (1) it is provided at left and right sides of positive/negative electrode (4), thermo-responsive line (1) upper surface is additionally provided with multiple holes (2), described The upper surface of thermo-responsive line (1) is covered with light absorbing layer (3), and the thermo-responsive line (1) is provided with and multiple and hole on one side (2) one-to-one detection electrode (5).
2. a kind of optothermal detector of detectable optical field distribution as described in claim 1, it is characterised in that: described hole (2) Set-up mode be alternatively arranged along thermo-responsive line (1) extending direction, the detection electrode (5) is set to thermo-responsive line (1) side.
3. a kind of optothermal detector of detectable optical field distribution as described in claim 1, it is characterised in that: described hole (2) It is arranged for square matrix, and is provided with conductive plate (6) between thermo-responsive line (1) and positive/negative electrode (4), the detection electrode (5) sets It is placed in the bottom surface of thermo-responsive line (1).
4. a kind of optothermal detector of detectable optical field distribution as described in claim 1, it is characterised in that: the light absorbing layer (3) nano-particle layer formed for gold, silver.
5. a kind of optothermal detector of detectable optical field distribution as described in claim 1, it is characterised in that: the light absorbing layer (3) be multilayered structure, by it is lower and on be followed successively by glassy layer (301), layers of chrome (302), germanium layer (303), silicon layer (304), titanium dioxide Titanium layer (305), bifluoride magnesium (306).
6. a kind of optothermal detector of detectable optical field distribution as claimed in claim 5, it is characterised in that: the glassy layer (301) with a thickness of 20~150nm, the layers of chrome (302) with a thickness of 150~250nm, the germanium layer (303) with a thickness of 25~45nm, the silicon layer (304) with a thickness of 25~45nm, the titanium dioxide layer (305) with a thickness of 40~60nm, institute State bifluoride magnesium (306) with a thickness of 100~150nm.
7. a kind of optothermal detector of detectable optical field distribution as claimed in claim 6, it is characterised in that: the glassy layer (301) with a thickness of 35nm, the layers of chrome (302) with a thickness of 210nm, the germanium layer (303) with a thickness of 35nm, the silicon The thickness 35nm of layer (304), the titanium dioxide layer (305) with a thickness of 55nm, the bifluoride magnesium (306) with a thickness of 120nm。
8. a kind of optothermal detector of detectable optical field distribution as described in claim 1, it is characterised in that: the thermo-responsive line (1) material includes VOx, Si, SiGe, YBCO or NiO.
CN201821291494.3U 2018-08-11 2018-08-11 A kind of optothermal detector of detectable optical field distribution Expired - Fee Related CN208520478U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201821291494.3U CN208520478U (en) 2018-08-11 2018-08-11 A kind of optothermal detector of detectable optical field distribution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201821291494.3U CN208520478U (en) 2018-08-11 2018-08-11 A kind of optothermal detector of detectable optical field distribution

Publications (1)

Publication Number Publication Date
CN208520478U true CN208520478U (en) 2019-02-19

Family

ID=65333808

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201821291494.3U Expired - Fee Related CN208520478U (en) 2018-08-11 2018-08-11 A kind of optothermal detector of detectable optical field distribution

Country Status (1)

Country Link
CN (1) CN208520478U (en)

Similar Documents

Publication Publication Date Title
JP6093921B1 (en) Electromagnetic wave detector, electromagnetic wave detector array, and gas analyzer
Chen et al. Characterizations of VO2-based uncooled microbolometer linear array
CN104937385B (en) Infrared-ray detecting element, infrared detector and infrared-type gas sensor
CN105977335B (en) Shortwave optics thermal detector and its focal plane array device
KR101922119B1 (en) Infrared detector and method for detecting infrared using the same
EP2938979B1 (en) Mems infrared sensor including a plasmonic lens
US9587986B2 (en) Apparatus for sensing
CN208420680U (en) It is a kind of for detecting the optics thermal detector of chiral molecules
CN107150995B (en) A kind of polarization sensitive non-refrigerated infrared detector and preparation method thereof
Savinov et al. Radiation-harvesting resonant superconducting sub-THz metamaterial bolometer
CN109030375A (en) It is a kind of for detecting the optics thermal detector of chiral molecules
CN208520478U (en) A kind of optothermal detector of detectable optical field distribution
CN207964092U (en) A kind of uncooled ir bolometer that high IR absorbs
CN109029721A (en) A kind of optothermal detector of detectable optical field distribution
CN109192866A (en) A kind of circularly polarized light detector based on Schottky barrier
Bartmann et al. Germanium nanowire microbolometer
JP3303786B2 (en) Bolometer type infrared sensor
CN208765847U (en) A kind of optical detector enhancing light absorption
CN208738306U (en) A kind of circularly polarized light detector based on Schottky barrier
CN208399013U (en) A kind of optics thermal detector that the polarization direction for linearly polarized light detects
Varpula et al. Uncooled nano-thermoelectric bolometers for infrared imaging and sensing
KR101834833B1 (en) Fire detecting device and infrared detectiong sensor having the same
CN108871580A (en) It is a kind of for detecting the optics thermal detector in circularly polarized light direction
CN208520482U (en) It is a kind of for detecting the optics thermal detector in circularly polarized light direction
CN208520479U (en) A kind of photobridge for luminous intensity detection

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190219

Termination date: 20210811