CN208520479U - A kind of photobridge for luminous intensity detection - Google Patents
A kind of photobridge for luminous intensity detection Download PDFInfo
- Publication number
- CN208520479U CN208520479U CN201821291501.XU CN201821291501U CN208520479U CN 208520479 U CN208520479 U CN 208520479U CN 201821291501 U CN201821291501 U CN 201821291501U CN 208520479 U CN208520479 U CN 208520479U
- Authority
- CN
- China
- Prior art keywords
- thickness
- photobridge
- luminous intensity
- intensity detection
- thermo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The utility model relates to a kind of photobridges for luminous intensity detection, including thermo-responsive line, it is provided with positive/negative electrode at left and right sides of the thermo-responsive line, is additionally provided with electrode in the middle part of thermo-responsive line, it is additionally provided with hole on the thermo-responsive line, is filled with metal nanoparticle in described hole；The positive/negative electrode is electrically connected with the positive/negative electrode of reference power supply, both ends are electrically connected with the positive/negative electrode of the reference power supply after resistance R1, resistance R2 series connection, galvanometric one end is electrically connected with electrode, is electrically connected at the galvanometric other end and resistance R1, resistance R2 series connection；This is used for the photobridge of luminous intensity detection, although also using electric signal, by being provided with standard light, the principle of electric bridge is utilized, monitoring error caused by change in electric caused by can eliminating because of environmental factor, so that the photobridge for being used for luminous intensity detection is not influenced by change in electric.
Description
Technical field
The present invention relates to light intensity detection technical fields, and in particular to a kind of photobridge for luminous intensity detection.
Background technique
The physical effect of photodetector is generally divided into photon effect and photo-thermal effect, and corresponding detector is referred to as light
Subtype detector and photo-thermal type detector.The common trait of various photon type detectors is using semiconductor energy carrying material, photon
Energy has generated directly effect to photoelectronic in detection material, therefore photon type detector has cut-off response frequency or wavelength,
And spectral response is limited to a certain wave band, therefore different material systems determines that detector has different response wave length scopes,
Generally it is difficult to use in wide range or multispectral section of detection.Photo-thermal type detector is not caused directly after absorbing optical radiation energy
The change of internal electron state, but the luminous energy of absorption is become the energy of thermal motion of lattice, cause detecting element temperature to rise,
It changes so as to cause the electrical properties of detecting element or other physical properties, therefore the size of photo-thermal effect and photon energy does not have
There is direct relation, photo-thermal type detector is in principle to frequency without selectivity.Due to infrared band especially in LONG WAVE INFRARED with
The photo-thermal effect of upper wave band becomes apparent from compared to Uv and visible light, therefore optothermal detector is commonly used in the spy of middle long wave optical radiation
It surveys, typical photo-thermal type detector includes the types such as micro-metering bolometer, pyroelectric detector and thermocouple detector.Due to temperature
Raising is the effect of heat accumulation, and the general response speed of thermal detector based on photo-thermal effect is slower, in millisecond magnitude.
Existing photodetector, the intensity of detection light, typically converts optical signals to electric signal, by obtaining electricity
The variation of signal indirectly measures the intensity of light, although this method can reflect the strength information of light, still, be easy by
There is the factor for influencing electric signal in the influence of environmental factor, especially environment, it is easier to lead to the error of optical monitoring signal.
Summary of the invention
In view of the above-mentioned problems, holding when the intensity of detection light present invention aim to address existing photodetector
It is easily affected by environment, lead to the problem of monitoring error.
For this purpose, the present invention provides a kind of photobridge for luminous intensity detection, including thermo-responsive line, the thermo-responsive line
The left and right sides be provided with positive/negative electrode, electrode is additionally provided in the middle part of thermo-responsive line, is additionally provided with hole on the thermo-responsive line
Hole, described hole is interior to be filled with metal nanoparticle；The positive/negative electrode is electrically connected with the positive/negative electrode of reference power supply, resistance
Both ends are electrically connected with the positive/negative electrode of the reference power supply after R1, resistance R2 series connection, and galvanometric one end is electrically connected with electrode, inspection
It is electrically connected at the other end of flowmeter and resistance R1, resistance R2 series connection.
The metal nanoparticle is the nano particle that gold, silver are formed.
The metal nanoparticle be various metals combination layer structure, by it is lower and on be followed successively by glassy layer layers of chrome, germanium layer,
Silicon layer, titanium dioxide layer, bifluoride magnesium.
The glassy layer with a thickness of 20~150nm, the layers of chrome with a thickness of 150~250nm, the thickness of the germanium layer
For 25~45nm, the silicon layer with a thickness of 25~45nm, the titanium dioxide layer with a thickness of 40~60nm, the bifluoride
Magnesium with a thickness of 100~150nm.
The glassy layer with a thickness of 35nm, the layers of chrome with a thickness of 210nm, the germanium layer with a thickness of 35nm, institute
State the thickness 35nm of silicon layer, the titanium dioxide layer with a thickness of 55nm, the bifluoride magnesium with a thickness of 120nm.
The layers of chrome can also be one of titanium, iridium, tungsten, nickel, silver or multiple combinations at alloy.
The thermo-responsive wire material includes VOx, Si, SiGe, YBCO or NiO.
Substrate layer is additionally provided with below the thermo-responsive line.
The substrate layer is silica.
Beneficial effects of the present invention: this photobridge for luminous intensity detection provided by the invention, although also using electricity
Signal, but by being provided with standard input light, using the principle of electric bridge, by comparison, caused by can eliminating because of environmental factor
Monitoring error caused by change in electric so that the photobridge for being used for luminous intensity detection is not influenced by change in electric,
The intensity of light can be accurately measured, and the monitoring method principle is simple, mode of operation is simple, very useful.
The present invention is described in further details below with reference to attached drawing.
Detailed description of the invention
Fig. 1 is the photobridge structural schematic diagram for luminous intensity detection.
Fig. 2 is the photobridge and peripheral circuit connection schematic diagram of luminous intensity detection.
Fig. 3 is that the photobridge of luminous intensity detection connect schematic equivalent circuit with peripheral circuit.
Fig. 4 is the photobridge side schematic view of luminous intensity detection.
Fig. 5 is the photobridge structural schematic diagram two of luminous intensity detection.
Fig. 6 is metal nanoparticle various metals combination schematic diagram of a layer structure.
Fig. 7 is absorptivity schematic diagram of the light absorbing medium to the light of different wave length.
In figure: 1, thermo-responsive line；2, hole；3, metal nanoparticle；301, glassy layer；302, layers of chrome；303, germanium layer；
304, silicon layer；305, titanium dioxide layer；306, bifluoride magnesium；4, positive/negative electrode；5, electrode；6, substrate layer；7, galvanometer.
Specific embodiment
Reach the technical means and efficacy that predetermined purpose is taken for the present invention is further explained, below in conjunction with attached drawing and reality
Example is applied to a specific embodiment of the invention, structure feature and its effect, detailed description are as follows.
Embodiment 1
In order to solve existing photodetector, when the intensity of detection light, be easy it is affected by environment, cause monitoring miss
The problem of difference.It is described the present invention provides a kind of photobridge for luminous intensity detection as shown in Figure 1, including thermo-responsive line 1
The left and right sides of thermo-responsive line 1 is provided with positive/negative electrode 4, and the middle part of thermo-responsive line 1 is additionally provided with electrode 5, the thermo-responsive line
It is additionally provided with hole 2 on 1, is filled with metal nanoparticle 3 in described hole 2；The positive/negative electrode 4 and reference power supply just/
Negative electrode electrical connection, both ends are electrically connected with the positive/negative electrode of the reference power supply after resistance R1, resistance R2 series connection, and the one of galvanometer 7
End is electrically connected with electrode 5, is electrically connected at the other end of galvanometer 7 and resistance R1, resistance R2 series connection, electrode 5 is set to thermo-responsive
The middle position of line 1, so that any one the thermo-responsive line 1 between electrode 5 of positive/negative electrode 4 is when same electric current passes through
It waits, the resistance value of thermo-responsive line 1 is identical.
External circuit is attached with the photobridge for being used for luminous intensity detection according to mode as shown in Figure 2, shown in Fig. 3
For equivalent circuit diagram, wherein the equivalent resistance at the place standard input light LIGHT1 is R3, the place incident light LIGHT2 to be measured
The equivalent resistance to be measured at place is the balance resistance that R4, resistance R1 and resistance R2 are external circuit.
A kind of measurement method, when carrying out luminous intensity detection, standard input light LIGHT1 is that known luminous intensity can
The standard input light of tune, resistance R1 is identical as the resistance value of resistance R2, and the direction of galvanometer 7 is not necessarily oriented to 0, then by standard
The incident photobridge of incident light LIGHT1 and incident light LIGHT2 to be measured difference, specifically, standard input light LIGHT1 enters radio
The corresponding side in pole 5, the corresponding other side of incident light LIGHT2 incident electrode 4 to be measured, then adjustment criteria incident light LIGHT1
Intensity, until the direction of galvanometer 7 is oriented to 0, at this point, the intensity of standard input light LIGHT1 and incident light LIGHT2 to be measured
Intensity it is identical.
Another measurement method, when carrying out luminous intensity detection, resistance R1 is the resistance of known resistance value, and resistance R2 is
The rheostat of resistance value, standard input light LIGHT1 be known fixing intensity incident light, by standard input light LIGHT1 with to
Incident light LIGHT2 incident photobridge respectively is surveyed, at this point, the direction of galvanometer 7 not necessarily refers to adjust resistance R2 resistance value, directly to 0
It is oriented to 0 to the direction of galvanometer 7, at this point, intensity/LIGHT1 intensity of R4/R3=R2/R1=LIGHT2, you can get it
The intensity of LIGHT2.
As shown in figure 4, above-mentioned metal nanoparticle 3 is the nano particle that gold, silver are formed；The nanometer that gold, silver are formed
Grain has good optical absorption characteristics, can convert thermal signal for incident light, thus change the resistivity of thermo-responsive line 1, with
Just the intensity of incident light is detected.
As shown in Figure 5, Figure 6, the metal nanoparticle 3 be various metals combination layer structure, by it is lower and on be followed successively by
Glassy layer 301, layers of chrome 302, germanium layer 303, silicon layer 304, titanium dioxide layer 305, bifluoride magnesium 306；The metal nanoparticle 3 by
It is lower and on there is different refractive index to incident light so that the whole absorptivity to light is 90~100%, as shown in Figure 7
For the absorptivity schematic diagram of metal nanoparticle 3 described in a length of 0~2000nm of incident light wave.
Absorption in order to ensure metal nanoparticle 3 to incident light, the glassy layer 301 with a thickness of 20~150nm, institute
State layers of chrome 302 with a thickness of 150~250nm, the germanium layer 303 with a thickness of 25~45nm, the silicon layer 304 with a thickness of 25
~45nm, the titanium dioxide layer 305 with a thickness of 40~60nm, the bifluoride magnesium 306 with a thickness of 100~150nm.
Preferential selection, the glassy layer 301 with a thickness of 35nm, the layers of chrome 302 with a thickness of 210nm, the germanium
Layer 303 with a thickness of 35nm, the thickness 35nm of the silicon layer 304, the titanium dioxide layer 305 with a thickness of 55nm, described two
Magnesium fluoride 306 with a thickness of 120nm.
The layers of chrome 302 can also be one of titanium, iridium, tungsten, nickel, silver or multiple combinations at alloy, these materials
Equally has the effect of good absorption light.
The material of the thermo-responsive line 1 mainly includes VOx, Si, SiGe, YBCO or NiO, and the material of thermo-responsive line 1 is wanted
For fuel factor change in resistance can occur for Seeking Truth, and above-mentioned material generally has relatively high temperature-coefficient of electrical resistance (TCR),
Its absolute value be greater than 1%/DEG C；In addition, existing other temperature-sensitives for perceiving thermal change such as existing pyroelectricity material, thermocouple
Sense material can also serve as the production of thermo-responsive line 1.
As shown in figure 5, the lower section of the thermo-responsive line 1 is additionally provided with substrate layer 6, which primarily serves heat-insulated, prevents
Only electric current, the loss of voltage of heat losses and the reference power supply for preventing positive/negative electrode 4 from being connected, avoids external environment influence
The effect of incident light monitoring effect, therefore, above-mentioned substrate layer 6 are silica；Silica big, resistance to height with fine hardness
Warm, shatter-proof, electrical insulation characteristics can be very good to play the benchmark for preventing heat losses, the positive/negative electrode 4 of electric current being avoided to be connected
Electric current, the loss of voltage of power supply.
Embodiment 2
Photobridge described in above-described embodiment 1 for luminous intensity detection, mainly includes the following steps:
Step 1: preparing hole 2 on thermo-responsive line 1 using ion beam etching method；
Specific process is:, will be to using the vacuum work chamber for opening ion bean etcher under atmospheric air ambient
The fixed clamping of the thermo-responsive line 1 of processing is on workpiece mounting platform；Close vacuum work chamber；Vacuum work chamber is vacuumized
Vacuum degree is set to reach ion source working vacuum degree；Shape and size according to thermo-responsive line 1 are in the man-machine mutual of ion bean etcher
The control instruction of the ion-beam scanning track of input planning at moving cell；Ion source is opened, described control unit executes control and refers to
It enables, ion source is made etch by the scanning track traverse scanning of planning to thermo-responsive line 1；Ion source is closed in end to be scanned,
Vacuum work chamber is opened after deflation, the thermo-responsive line 1 after the completion of etching is removed from workpiece mounting platform, etching terminates；
Step 2: Applied Physics gas phase deposition technology, the metal nanoparticle 3 in hole 2；
Specific process is: using the vacuum work chamber for opening vapor deposition apparatus under atmospheric air ambient, will walk
The fixed clamping of thermo-responsive line 1 after the completion of a rapid etching is on sample stage, the hole 2 and evaporation source corresponding matching that need to be deposited；
Close vacuum work chamber；The vacuum degree for making vacuum degree reach vapor deposition job requirement is vacuumized to vacuum work chamber；According to heat
The material of the required vapor deposition of sensitive line 1, the control instruction of input vapor deposition at the human-computer interaction unit of vapor deposition apparatus；It opens
Ion source, described control unit execute control instruction, evaporation source are deposited thermo-responsive line 1 by planning；To after, then
Evaporation source, the instruction for setting next corresponding vapor deposition layer, continue to be deposited, to successively carry out the glassy layer of metal nanoparticle 3
301, after layers of chrome 302, germanium layer 303, silicon layer 304, titanium dioxide layer 305, bifluoride magnesium 306, power supply is closed, opens vacuum work
Make chamber, the thermo-responsive line 1 after the completion of vapor deposition is removed from sample stage, vapor deposition terminates.
In addition, it is necessary to explanation, the vapor deposition of the metal nanoparticle 3 is operated in vacuum environment, and vapor deposition is set
The description as described in a variety of materials evaporation film rate is had, the time of vapor deposition is set according to the thickness of vapor deposition, is described in table 1
The corresponding vapor deposition temperature of material of each vapor deposition layer of metal nanoparticle 3, the vapor deposition temperature of other materials can refer to evaporated device
Specification, consulted, the present embodiment is no longer described in detail.
1 common used material evaporated film temperature of table
| Substance | Vapor deposition temperature/DEG C |
| Glass | 880 |
| Cr | 1160 |
| Ge | 1170 |
| Si | 1340 |
| TiO2 | 1850 |
| MgF2 | 1540 |
In conclusion this photobridge for luminous intensity detection provided in this embodiment, solves existing photodetector,
When the intensity of detection light, be easy it is affected by environment, cause monitor error the problem of；Although also using electric signal, lead to
It crosses and is provided with standard input light, using the principle of electric bridge, by comparison, electric signal becomes caused by can eliminating because of environmental factor
Change, caused monitoring error so that the photobridge for being used for luminous intensity detection is not influenced by change in electric, can be accurate
Measurement light intensity, and the monitoring method principle is simple, and mode of operation is simple, very useful.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (9)
1. a kind of photobridge for luminous intensity detection, it is characterised in that: including thermo-responsive line (1), the thermo-responsive line (1)
The left and right sides is provided with positive/negative electrode (4), is additionally provided with electrode (5) in the middle part of thermo-responsive line (1), on the thermo-responsive line (1)
It is additionally provided with hole (2), is filled with metal nanoparticle (3) in described hole (2)；The positive/negative electrode (4) and reference power supply
Positive/negative electrode electrical connection, resistance R1, resistance R2 series connection after both ends be electrically connected with the positive/negative electrode of the reference power supply, galvanometer
(7) one end is electrically connected with electrode (5), is electrically connected at the other end of galvanometer (7) and resistance R1, resistance R2 series connection.
2. a kind of photobridge for luminous intensity detection as described in claim 1, it is characterised in that: the metal nanoparticle
(3) nano particle formed for gold, silver.
3. a kind of photobridge for luminous intensity detection as described in claim 1, it is characterised in that: the metal nanoparticle
(3) for various metals combination layer structure, by it is lower and on be followed successively by glassy layer (301), layers of chrome (302), germanium layer (303), silicon layer
(304), titanium dioxide layer (305), bifluoride magnesium (306).
4. a kind of photobridge for luminous intensity detection as claimed in claim 3, it is characterised in that: the glassy layer (301)
With a thickness of 20~150nm, the layers of chrome (302) with a thickness of 150~250nm, the germanium layer (303) with a thickness of 25~
45nm, the silicon layer (304) with a thickness of 25~45nm, the titanium dioxide layer (305) with a thickness of 40~60nm, described two
Magnesium fluoride (306) with a thickness of 100~150nm.
5. a kind of photobridge for luminous intensity detection as claimed in claim 4, it is characterised in that: the glassy layer (301)
With a thickness of 35nm, the layers of chrome (302) with a thickness of 210nm, the germanium layer (303) with a thickness of 35nm, the silicon layer
(304) thickness 35nm, the titanium dioxide layer (305) with a thickness of 55nm, the bifluoride magnesium (306) with a thickness of
120nm。
6. a kind of photobridge for luminous intensity detection as claimed in claim 3, it is characterised in that: the layers of chrome (302) is also
Can be one of titanium, iridium, tungsten, nickel, silver or multiple combinations at alloy.
7. a kind of photobridge for luminous intensity detection as described in claim 1, it is characterised in that: the thermo-responsive line (1)
Material includes VOx, Si, SiGe, YBCO or NiO.
8. a kind of photobridge for luminous intensity detection as described in claim 1, it is characterised in that: the thermo-responsive line (1)
Lower section be additionally provided with substrate layer (6).
9. a kind of photobridge for luminous intensity detection as claimed in claim 8, it is characterised in that: the substrate layer (6) is
Silica.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821291501.XU CN208520479U (en) | 2018-08-11 | 2018-08-11 | A kind of photobridge for luminous intensity detection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821291501.XU CN208520479U (en) | 2018-08-11 | 2018-08-11 | A kind of photobridge for luminous intensity detection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208520479U true CN208520479U (en) | 2019-02-19 |
Family
ID=65333737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821291501.XU Expired - Fee Related CN208520479U (en) | 2018-08-11 | 2018-08-11 | A kind of photobridge for luminous intensity detection |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208520479U (en) |
-
2018
- 2018-08-11 CN CN201821291501.XU patent/CN208520479U/en not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Stewart et al. | Ultrafast pyroelectric photodetection with on-chip spectral filters | |
| Wang et al. | Nanostructured vanadium oxide thin film with high TCR at room temperature for microbolometer | |
| US7119337B1 (en) | Infrared radiation sources, sensors and source combinations, and methods of manufacture | |
| US20180016187A1 (en) | Titanium-ruthenium co-doped vanadium dioxide thermosensitive film material and preparation method thereof | |
| CN208520479U (en) | A kind of photobridge for luminous intensity detection | |
| CN109037247A (en) | A kind of optothermal detector and preparation method thereof that enhancing absorbs | |
| CN105092053A (en) | Three-wavelength correction-free infrared monitoring method and device for MOCVD epitaxial growth | |
| CN109060127A (en) | A kind of photobridge for luminous intensity detection | |
| Gan et al. | Absolute cryogenic radiometer for high accuracy optical radiant power measurement in a wide spectral range | |
| CN111455331B (en) | Metal-doped amorphous carbon film material, and preparation method and application thereof | |
| Krishnan et al. | Spectral emissivities in the visible and infrared of liquid Zr, Ni, and nickel‐based binary alloys | |
| CN208655652U (en) | A kind of optothermal detector that enhancing absorbs | |
| Mayrwöger et al. | CO2 monitoring using a simple Fabry–Perot-based germanium bolometer | |
| US10704959B2 (en) | Germanium silicon tin oxide thin films for uncooled infrared detection | |
| Noulkow et al. | Infrared filter radiometers for thermodynamic temperature determination below 660 C | |
| Zheng et al. | High-accuracy primary and transfer standards for radiometric calibration | |
| CN105333962B (en) | A kind of thermometry and system for correcting two waveband temperature measurement error | |
| Guillaumont et al. | Recent thermoresistive material evolutions at LYNRED for improving uncooled microbolometer products thermal sensitivity | |
| XIE et al. | On-site determination of optical constants for thin films | |
| Wang et al. | Reactive ion beams sputtering of vanadium oxides films for uncooled microbolometer | |
| CN108871580A (en) | It is a kind of for detecting the optics thermal detector in circularly polarized light direction | |
| Risso et al. | Zero Power Crop Water-Stress Detector Based on a Micromechanical Photoswitch Monitoring Leaf Transmittance Change | |
| CN109029721A (en) | A kind of optothermal detector of detectable optical field distribution | |
| CN114295222A (en) | Tubular bolometer based on vanadium oxide film and preparation method thereof | |
| Abdullah et al. | Micromachined Uncooled Si x Ge y O 1-xy Microbolometer Integrated Metasurface for Uncooled Infrared Detection |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190219 Termination date: 20210811 |