CN208507473U - A kind of high self resonant frequency thin film capacitor - Google Patents

A kind of high self resonant frequency thin film capacitor Download PDF

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Publication number
CN208507473U
CN208507473U CN201821137106.6U CN201821137106U CN208507473U CN 208507473 U CN208507473 U CN 208507473U CN 201821137106 U CN201821137106 U CN 201821137106U CN 208507473 U CN208507473 U CN 208507473U
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China
Prior art keywords
electrode
capacitor
resonant frequency
thin film
shell
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Active
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CN201821137106.6U
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Chinese (zh)
Inventor
方立龙
王坤
胡金梅
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EACO CAPACITOR Inc
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EACO CAPACITOR Inc
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Abstract

The utility model provides a kind of high self resonant frequency thin film capacitor, shell, including first electrode, second electrode, the capacitor core of sealing inside housings, the first electrode connects the upper surface of the capacitor core, the second electrode connects the lower end surface of the capacitor core, the first electrode and second electrode, which are formed as being provided with insulating layer between the electrode of tubbiness and the first electrode and second electrode, is isolated, Embedding Material is filled between the shell and the capacitor core, reduce the self-induction of capacitor using tubbiness type electrode and fuse, the mutual inductance between two leading-out terminals is offset using stacked electrode simultaneously, ensure that capacitor overall inductance is smaller, to improve the self-resonant frequency of capacitor, so that it is guaranteed that the reliability that capacitor uses in high frequency.

Description

A kind of high self resonant frequency thin film capacitor
Technical field
The utility model relates to a kind of high self resonant frequency thin film capacitors.
Background technique
As power electronic equipment power is increasing, under conditions of power device through-current capability is limited, raising system is opened Closing frequency becomes inexorable trend, and power electronics thin film capacitor is since there are the presence of parasitic inductance, inductance to make capacitor Self-resonant frequency is not high, just loses the effect of capacitor at high frequencies.
Existing capacitor generally comprises capacitor body, leading-out terminal, copper strips, plastic shell and Embedding Material composition.Capacitor Device fuse both ends of the surface are connected with copper strips, and the copper strips other end is connect with two-terminal, with exhausted between lower leading-out terminal and upper leading-out terminal Edge layer insulate, then the capacitor body being welded and copper strips, terminal are put into togerther plastic shell, then filler material of casting is true Capacitor body is protected to be isolated with outside air
Currently, the capacitor in power electronic circuit, for the requirement of large capacity, small size, often first expects increasing The height of capacitor thus will increase the width for drawing copper strips, also increase current flow paths, lead to the electricity of capacitor itself Sensibility reciprocal increases, and ultimately limits the reliability that capacitor uses under high frequency occasion, restricts the development of power electronics industry.
Utility model content
The utility model is a kind of high self resonant frequency thin film capacitor, reduces capacitor using tubbiness type electrode and fuse Self-induction, while the mutual inductance between two leading-out terminals is offset using stacked electrode, it is ensured that capacitor overall inductance is smaller, to mention The self-resonant frequency of high capacitance, so that it is guaranteed that the reliability that capacitor uses in high frequency.
In order to overcome the shortcoming in the prior art, the utility model uses following scheme:
A kind of high self resonant frequency thin film capacitor, shell including first electrode, second electrode, sealing are inside housings Capacitor core, the first electrode connects the upper surface of the capacitor core, and the second electrode connects the capacitor core Lower end surface, the first electrode and second electrode are formed as the electrode of tubbiness and set between the first electrode and second electrode It is equipped with insulating layer and is isolated and is formed stepped construction, Embedding Material is filled between the shell and the capacitor core.
In one or more embodiments, it is provided with leading-out terminal on the first electrode, in the second electrode It is provided with lower leading-out terminal, the upper leading-out terminal connects external equipment with lower leading-out terminal.
In one or more embodiments, electrode mounting hole, encapsulating hole and gas vent are provided on the shell.
In one or more embodiments, the specification in the electrode mounting hole and encapsulating hole is same or different.
In one or more embodiments, the shell is formed as plastic casing.
The utility model has the advantages that a kind of high self resonant frequency thin film capacitor, reduces oneself of capacitor using tubbiness type electrode and fuse Sense, while the mutual inductance between two leading-out terminals is offset using stacked electrode, it is ensured that capacitor overall inductance is smaller, to improve The self-resonant frequency of capacitor, so that it is guaranteed that the reliability that capacitor uses in high frequency.
Detailed description of the invention
Fig. 1 is the schematic diagram of the section structure of the utility model embodiment high self resonant frequency thin film capacitor.
Fig. 2 is the utility model embodiment high self resonant frequency thin film capacitor configuration schematic diagram.
Specific embodiment
As follows in conjunction with attached drawing, application scheme is further described:
Embodiment:
Referring to attached drawing 1-2, the present embodiment provides a kind of high self resonant frequency thin film capacitor, 5 body of shell including first electrode 2, second electrode 3, the capacitor core 1 of sealing inside housings, the first electrode 2 connect the upper surface of the capacitor core 1, The second electrode 3 connects the lower end surface of the capacitor core 1, and the first electrode 2 and second electrode 3 are formed as the electricity of tubbiness It is provided with insulating layer 4 between pole and the first electrode 2 and second electrode 3 and is isolated and is formed stepped construction, in the shell Embedding Material 6 is filled between body 5 and the capacitor core 1.
Further, upper leading-out terminal 21 is provided in the first electrode 2,3 are provided with down in the second electrode Leading-out terminal 31, the upper leading-out terminal 21 and lower leading-out terminal 31 connect external equipment.
Further, electrode mounting hole, encapsulating hole and gas vent are provided on the shell 5.
Further, the specification in the electrode mounting hole and encapsulating hole is same or different.
Further, the shell 5 is formed as plastic casing.
Specifically, a kind of high self resonant frequency thin film capacitor capacitor includes: capacitor core 1, first electrode 2, second Electrode 3, insulating layer 4, shell 5 and Embedding Material 6 form.
The upper and lower end faces of capacitor body 1 weld together with the first, second electrode 2,3 respectively, hold capacitor core Amount is drawn out to external circuit, is insulated among the first, second electrode 2,3 with insulating layer 4,1 He of capacitor core that then will be welded First, second electrode 2,3, insulating layer 4 is put into togerther in shell 5, casting note Embedding Material 6.
It is that above-mentioned preferred embodiment should be regarded as application scheme embodiment for example, all with application scheme thunder Same, approximate or technology deduction, replacement, improvement for making based on this etc., are regarded as the protection scope of this patent.

Claims (5)

1. a kind of high self resonant frequency thin film capacitor, which is characterized in that shell including first electrode, are sealed in second electrode The capacitor core of enclosure interior, the first electrode connect the upper surface of the capacitor core, described in the second electrode connection The lower end surface of capacitor core, the first electrode and second electrode be formed as the electrode of tubbiness and the first electrode and second electricity It is provided with insulating layer between pole and is isolated and is formed stepped construction, filled with filling between the shell and the capacitor core Closure material.
2. high self resonant frequency thin film capacitor according to claim 1, which is characterized in that set on the first electrode It is equipped with leading-out terminal, lower leading-out terminal is provided in the second electrode, the upper leading-out terminal is connected with lower leading-out terminal External equipment.
3. high self resonant frequency thin film capacitor according to claim 1, which is characterized in that be provided with electricity on the shell Pole mounting hole, encapsulating hole and gas vent.
4. high self resonant frequency thin film capacitor according to claim 3, which is characterized in that the electrode mounting hole and filling The specification of sealing of hole is same or different.
5. high self resonant frequency thin film capacitor according to claim 1, which is characterized in that the shell is formed as plastics Shell.
CN201821137106.6U 2018-07-18 2018-07-18 A kind of high self resonant frequency thin film capacitor Active CN208507473U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201821137106.6U CN208507473U (en) 2018-07-18 2018-07-18 A kind of high self resonant frequency thin film capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201821137106.6U CN208507473U (en) 2018-07-18 2018-07-18 A kind of high self resonant frequency thin film capacitor

Publications (1)

Publication Number Publication Date
CN208507473U true CN208507473U (en) 2019-02-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201821137106.6U Active CN208507473U (en) 2018-07-18 2018-07-18 A kind of high self resonant frequency thin film capacitor

Country Status (1)

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CN (1) CN208507473U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110010345A (en) * 2019-04-02 2019-07-12 无锡宏广电容器有限公司 A kind of round electrode and resonant capacitor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110010345A (en) * 2019-04-02 2019-07-12 无锡宏广电容器有限公司 A kind of round electrode and resonant capacitor

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