CN208489202U - A kind of high-frequency semiconductor thin film field-effect pipe - Google Patents
A kind of high-frequency semiconductor thin film field-effect pipe Download PDFInfo
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- CN208489202U CN208489202U CN201821042302.5U CN201821042302U CN208489202U CN 208489202 U CN208489202 U CN 208489202U CN 201821042302 U CN201821042302 U CN 201821042302U CN 208489202 U CN208489202 U CN 208489202U
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- thin film
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- gate dielectric
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Abstract
The high-frequency semiconductor thin film field-effect pipe of the utility model, including substrate, semiconductor layer, gate dielectric layer, source electrode, drain and gate, are provided with the barrier layer for the corrosion of resistance to grid etch between gate dielectric layer and grid.The high-frequency semiconductor thin film field-effect pipe of the utility model is made of substrate, semiconductor layer, gate dielectric layer, source electrode, drain electrode, grid and group interlayer, by Al2O3Hafnium oxide HfO is set between gate dielectric layer and grid2Group interlayer, hafnia film can effectively obstruct erosion of the etching liquid to aluminium oxide after aluminium film has etched, so that the speed control of next step gas dry etching aluminium oxide is more acurrate, it avoids dry etching in the process to carve crossing for semiconductor layer, ensure that the performance of acquired high-frequency semiconductor thin film field-effect pipe.
Description
Technical field
The utility model relates to a kind of high-frequency semiconductor thin film field-effect pipes, more specifically, more particularly to a kind of height
Frequency semiconductive thin film field-effect tube.
Background technique
In recent years, with the development of the thin film field-effect pipe of novel semi-conductor, such as oxide-based amorphous silicon, polysilicon, oxygen
Change the thin film field effect of zinc, indium gallium zinc oxygen and two-dimensional material class graphene, Transition-metal dichalcogenide, III VI compounds of group
Ying Guan.The frequency characteristic of device is increasingly concerned as the important indicator of high speed electronics.It is probed by principle, technique is set
Meter and material selection, the production higher thin film semiconductor's field-effect tube of cutoff frequency are to following logic and Analogical Electronics
The actual demand of application.
The cutoff frequency of semiconductive thin film field-effect tube is influenced by factors, and calculation formula is as follows:f T= g m/(2π
(C g+C p)) ≈μ(V g -V th )/(2πL(L+L ov )),Whereinf TFrequency is off,C gIt is gate capacitance,C pIt is parasitic capacitance,μIt is
Field-effect mobility,LIt is channel length,L ovIt is the overlapping length of grid and source and drain.By calculation formula it is found that reducing the parasitism of device
The cutoff frequency of device can be improved in capacitor.Research has shown that, when semiconductive thin film field-effect mobility (mutual conductance) increase, channel length
When reduction and parasitic capacitance reduce, cutoff frequency will be improved, so that semiconductive thin film field-effect tube is with good
High frequency characteristics.However in the preparation process of semiconductive thin film field-effect tube, the size of usual sub-micron needs to be exposed with electron beam
Light technology is realized, and electron beam exposure is for complete nonconducting quartz substrate (high-frequency loss is lower than High resistivity substrate) technique
It is relatively difficult to achieve.
Summary of the invention
The utility model in order to overcome the shortcomings of the above technical problems, provides a kind of high-frequency semiconductor thin film field-effect
Pipe.
The high-frequency semiconductor thin film field-effect pipe of the utility model, including substrate, semiconductor layer, gate dielectric layer, source electrode, leakage
Pole and grid, substrate are made of insulating materials, and semiconductor layer is set on substrate, and gate dielectric layer is set in semiconductor layer
Centre, grid are located at the top of gate dielectric layer, and source electrode and drain electrode is respectively arranged on the semiconductor layer of gate dielectric layer two sides；Its feature
It is: is provided with the barrier layer for the corrosion of resistance to grid etch between the gate dielectric layer and grid.
The high-frequency semiconductor thin film field-effect pipe of the utility model, the material of described group of interlayer are hafnium oxide HfO2。
The high-frequency semiconductor thin film field-effect pipe of the utility model, the material of the semiconductor layer are indium selenide InSe, grid
The material of dielectric layer is aluminium oxide Al2O3。
The beneficial effects of the utility model are: the high-frequency semiconductor thin film field-effect pipe of the utility model, by substrate, partly lead
Body layer, gate dielectric layer, source electrode, drain electrode, grid and group interlayer composition, by Al2O3Oxidation is set between gate dielectric layer and grid
Hafnium HfO2Group interlayer, hafnia film can effectively obstruct erosion of the etching liquid to aluminium oxide after aluminium film has etched, so that
The speed control of next step gas dry etching aluminium oxide is more acurrate, avoids dry etching and carves in the process to crossing for semiconductor layer, ensure that
The performance of acquired high-frequency semiconductor thin film field-effect pipe.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the high-frequency semiconductor thin film field-effect pipe of the utility model；
Fig. 2 is the schematic diagram that semiconductor layer is prepared during the thin film field-effect control of the utility model is standby；
Fig. 3 is to prepare Al during the thin film field-effect control of this utility model is standby2O3The schematic diagram of film；
Fig. 4 is to deposit HfO during the thin film field-effect control of this utility model is standby2Schematic diagram；
Fig. 5 is the schematic diagram that aluminium film is prepared during the thin film field-effect control of this utility model is standby；
Fig. 6 is the schematic diagram of spin coating photoresist during the thin film field-effect control of this utility model is standby；
Fig. 7 is the schematic diagram that channel is etched during the thin film field-effect control of this utility model is standby；
Fig. 8 is the schematic diagram of etching oxidation aluminium film during the thin film field-effect control of this utility model is standby；
Fig. 9 is the schematic diagram in preparation source during the thin film field-effect control of this utility model is standby, drain electrode；
Figure 10 is the schematic diagram of lift-off processing during the thin film field-effect control of this utility model is standby.
In figure: 1 substrate, 2 semiconductor layers, 3 gate dielectric layers, 4 barrier layers, 5 source electrodes, 6 drain electrodes, 7 grids.
Specific embodiment
The utility model is described in further detail with embodiment with reference to the accompanying drawing.
As shown in Figure 1, the structural schematic diagram of the high-frequency semiconductor thin film field-effect pipe of the utility model is given, by including
Substrate 1, semiconductor layer 2, gate dielectric layer 3, source electrode 5, barrier layer 4, drain electrode 6 and grid 7, substrate 1 are made of insulating materials, partly lead
Body layer 2 is set on substrate, and gate dielectric layer 3 is set to the center of semiconductor layer 3, and grid 7 is located at the top of gate dielectric layer 3, source
Pole 5 and drain electrode 6 are respectively arranged on the semiconductor layer 2 of 3 two sides of gate dielectric layer；Resistance to grid are provided between gate dielectric layer 3 and grid 7
Pole etches the barrier layer 4 of corrosion, and the material of semiconductor layer 2 is indium selenide InSe, and the material of gate dielectric layer 3 is aluminium oxide
Al2O3.The material of group interlayer is hafnium oxide HfO2.Hafnia film can effectively obstruct etching liquid pair after aluminium film has etched
The erosion of aluminium oxide avoids dry etching and is situated between in the process to grid so that the speed control of next step gas dry etching aluminium oxide is more acurrate
The influence of matter layer ensure that the performance of acquired high-frequency semiconductor thin film field-effect pipe.
As shown in Figures 1 to 10, the standby preparation in the process of thin film field-effect control for successively giving the utility model is partly led
Body layer, preparation Al2O3Film, deposition HfO2, preparation aluminium film, spin coating photoresist, etching channel, etching oxidation aluminium film, preparation
The schematic diagram of source-drain electrode, lift-off processing, the preparation method of the high-frequency semiconductor thin film field-effect pipe of the utility model, by with
Lower step is realized:
A) prepares semiconductor layer, layer of semiconductor film is prepared on an insulating substrate, as semiconductor layer；
B) prepares gate dielectric layer, deposits one layer of aluminium oxide Al on the surface of semiconductor layer using atomic layer deposition ALD2O3It is thin
Film, as gate dielectric layer；
C) deposited barrier layers, using atomic layer deposition ALD in Al2O3The surface of film deposits one layer of hafnium oxide HfO2；
D) prepares aluminium film, then in hafnium oxide HfO2The surface of group interlayer prepares one layer of aluminium film；
E) defines device context, and with photoetching process definer part range, the aluminium etching liquid of the aluminium film outside device context is carved
Eating away, to avoid the interconnection short circuit between device；
F) spin coating photoresist；
G) etches channel, the first channel location of exposure device, with aluminium etching liquid that the aluminium on channel location is thin after development
Film etching removal, since etching liquid has longitudinal etching and lateral etching to aluminium film simultaneously, so that the aluminium film under photoresist
Form concave shape；
H) etching oxidation aluminium film, using plasma etching oxidation aluminium film, under the protective effect of photoresist, only
Aluminum oxide film in channel is etched away, so that the semiconductive thin film in channel exposes；
I) prepares source, drain electrode, using one layer of metallic film of atomic layer deposition ALD deposition, to form source electrode and drain electrode；
J) lift-off processing, the metallic film that photoresist is removed using stripping method and is adhered to thereon, half prepared needed for being formed
Conductor thin film field-effect tube.
Wherein, the material of semiconductor layer prepared in step a) is indium selenide InSe, prepared oxidation in step b)
Aluminium Al2O3Film with a thickness of 20~40nm, hafnium oxide HfO deposited in step c)2Barrier layer with a thickness of 2~3nm, step
It is rapid d) in prepared aluminium film with a thickness of etching 60 using 40 DEG C of aluminium etching liquids in 80~120nm, step e) and step g)
Second.
In step a), the acquisition that semiconductor layer is arranged on substrate by using patterned semiconductor material thin film or is adopted
The two-dimensional material thin slice prepared with mechanical stripping method；When the two-dimensional material thin slice prepared using mechanical stripping method, step a) to step
Rapid c) to realize by the following method: two-dimensional material indium selenide InSe film, to tearing several times, is then transferred into clear by adhesive tape
It on clean silica glass substrate, is placed it in atomic layer deposition apparatus cavity immediately after, deposits the aluminium oxide of 30nm
Film, later the hafnium oxide HfO of redeposition 2-3nm2Film.
The two of mechanical stripping method preparation can be selected in the preparation method of the high-frequency semiconductor thin film field-effect pipe of the utility model
Material sheet or patterned semiconductor material thin film are tieed up, it, can be with using the mode of atomic layer deposition after semiconductor film film preparation
Obtain conformal and fine and close aluminum oxide film, can effectively completely cut off moisture in air and oxygen molecule etc. influence and
The influence of the chemical solvents such as photoresist, developer solution, acetone, the ethyl alcohol that may be contacted in photoetching process.Simultaneous oxidation aluminium film is made
Preferable semiconductor medium bed boundary can be provided for dielectric layer, reduces boundary defect state, the field-effect for improving field-effect tube is moved
Shifting rate.
The preparation method of the high-frequency semiconductor thin film field-effect pipe of the utility model, using 40 DEG C of aluminium etching liquids, (aluminium is carved
Erosion liquid matches: phosphoric acid: nitric acid: glacial acetic acid: water=80:5:5:10) not only there is longitudinal quarter when carrying out wet etching to aluminium
Erosion, while also having the characteristics of lateral etching.Ultraviolet photolithographic is restricted to 2-3 microns of line width (positive photoresist non-exposed areas), is passed through
Etching shortens within 2 microns or even the scale of sub-micron.The size of usual sub-micron is needed with electron beam exposure technology come real
It is existing, and electron beam exposure is relatively difficult to achieve for complete nonconducting quartz substrate (high-frequency loss is lower than High resistivity substrate) technique.
Simultaneously as this mode is autoregistration rather than manual-alignment, the microdefect of electrode edge injustice can it is completely conformal by
Etching forms the uniform interval (underlap) of grid and source, drain electrode, and size can be controlled in 100nm or so.
The preparation method of the high-frequency semiconductor thin film field-effect pipe of the utility model, because aluminium etching liquid is to hafnia film
Etching speed it is more much slower than aluminum oxide film.The hafnia film on surface layer can effectively barrier be carved after aluminium film has etched
Lose erosion of the liquid to aluminium oxide.It is more acurrate to the speed control of next step gas dry etching aluminium oxide, and the speed of dry etching is not influenced.
It is overlapping as being not aligned with gate-source, drain electrode brought by error by the process design method of this patent, it can be with maximum journey
The reduction parasitic capacitance of degree, improves the frequency characteristic of device.
The specific step that high-frequency semiconductor thin film field-effect pipe is prepared using two-dimensional material InSe as semiconductor material is given below
It is rapid:
1. being transferred to clean quartzy (dioxy by two-dimensional material InSe (indium selenide) film by adhesive tape to tearing several times
SiClx) in glass substrate.It places it in atomic layer deposition apparatus cavity at once.Cavity temperature is 150 DEG C, deposits 30nm's
Aluminum oxide film, the later hafnium oxide (HfO of redeposition 2-3nm2) film.
2. because aluminum oxide film does not influence the microscopic to InSe diaphragm, on substrate by InSe diaphragm
Position positioning record.
3. substrate is placed thermal evaporation station cavity, aluminium wire is wrapped on energization tungsten wire as evaporation source.Chamber vacuum degree reaches
To 8*10-6When Torr.Galvanization heats tungsten wire, melts aluminium wire, on substrate with the speed hydatogenesis of 2 angstroms per seconds, coprecipitated
The aluminium film of product 100nm.
4. substrate is taken out cavity, spin coating positive photoresist AR 5350,110 DEG C of hot plate are toasted 3 minutes.In no exposure mask ultraviolet photolithographic
Design layout in equipment exposes the aluminium film position between element layout.Development 25 seconds.Use 40 DEG C of aluminium etching liquid etchings 60
Second, the aluminium film between device is removed, in order to avoid short circuit is interconnected between device.
5. spin coating positive photoresist AR 5350 again, 110 DEG C of hot plate are toasted 3 minutes.Source-drain electrode position is exposed, layout design
Grid length is 3 microns.Develop 25 seconds after exposure.It is etched 60 seconds using 40 DEG C of aluminium etching liquids, the aluminium of source-drain electrode position is etched away.
Since wet etching vertical and horizontal have etching, " undercut " shape of indent can be formed under photoresist layer.
6. using reactive plasma etching apparatus ICP etching oxidation aluminium film.
7. 25nm Ti/75 nm Au is evaporated using electron beam evaporation equipment, due to the undercut shape formed before,
The titanium film of evaporation, which is photo-etched glue, to be stopped to form source-drain electrode.It takes out sample and is placed into acetone soak one hour, dissolve photoetching
Glue removes titanium metallic film.Undercut shape is especially advantageous for stripping technology in side wall.And in aluminum gate electrode and source, drain electrode
Between form the extremely narrow interval " underlap " 100nm or so.Due to absolutely not overlapping between gate electrode and source, drain electrode,
There is no parasitic capacitances.
Claims (3)
1. a kind of high-frequency semiconductor thin film field-effect pipe, including substrate (1), semiconductor layer (2), gate dielectric layer (3), source electrode (5),
Drain (6) and grid (7), and substrate is made of insulating materials, and semiconductor layer is set on substrate, and gate dielectric layer is set to semiconductor
The center of layer, grid are located at the top of gate dielectric layer, and source electrode and drain electrode is respectively arranged on the semiconductor layer of gate dielectric layer two sides；
It is characterized by: being provided with the barrier layer (4) for the corrosion of resistance to grid etch between the gate dielectric layer and grid.
2. high-frequency semiconductor thin film field-effect pipe according to claim 1, it is characterised in that: the material of the barrier layer is
Hafnium oxide HfO2。
3. high-frequency semiconductor thin film field-effect pipe according to claim 1 or 2, it is characterised in that: the semiconductor layer (2)
Material be indium selenide InSe, the material of gate dielectric layer (3) is aluminium oxide Al2O3。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821042302.5U CN208489202U (en) | 2018-06-29 | 2018-06-29 | A kind of high-frequency semiconductor thin film field-effect pipe |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821042302.5U CN208489202U (en) | 2018-06-29 | 2018-06-29 | A kind of high-frequency semiconductor thin film field-effect pipe |
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| CN208489202U true CN208489202U (en) | 2019-02-12 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110620043A (en) * | 2019-09-24 | 2019-12-27 | 山东大学 | Preparation method of semiconductor thin film field effect transistor made of unstable two-dimensional material |
| CN110660864A (en) * | 2018-06-29 | 2020-01-07 | 山东大学苏州研究院 | High-frequency semiconductor thin film field effect transistor and preparation method thereof |
| CN113066905A (en) * | 2021-04-12 | 2021-07-02 | 山东大学 | Method for preparing indium selenide photoelectric detector by photoetching technology |
-
2018
- 2018-06-29 CN CN201821042302.5U patent/CN208489202U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110660864A (en) * | 2018-06-29 | 2020-01-07 | 山东大学苏州研究院 | High-frequency semiconductor thin film field effect transistor and preparation method thereof |
| CN110620043A (en) * | 2019-09-24 | 2019-12-27 | 山东大学 | Preparation method of semiconductor thin film field effect transistor made of unstable two-dimensional material |
| CN110620043B (en) * | 2019-09-24 | 2021-01-15 | 山东大学 | Preparation method of semiconductor thin film field effect transistor made of unstable two-dimensional material |
| CN113066905A (en) * | 2021-04-12 | 2021-07-02 | 山东大学 | Method for preparing indium selenide photoelectric detector by photoetching technology |
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