CN208478311U - Electrostatic chuck and reaction chamber - Google Patents
Electrostatic chuck and reaction chamber Download PDFInfo
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- CN208478311U CN208478311U CN201821195261.3U CN201821195261U CN208478311U CN 208478311 U CN208478311 U CN 208478311U CN 201821195261 U CN201821195261 U CN 201821195261U CN 208478311 U CN208478311 U CN 208478311U
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- Prior art keywords
- electrostatic chuck
- pedestal
- heating layer
- layer
- charge
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Abstract
A kind of electrostatic chuck and reaction chamber provided by the utility model, pedestal and heating layer are disconnected or conducted with ground by charge releasing unit, after technique terminates, by charge releasing unit can with the residual charge inside release electrostatic chuck, can to avoid constantly being accumulated because of residual charge caused by wafer the problem of shifting when being jacked up.
Description
Technical field
The utility model belongs to technical field of manufacturing semiconductors, and in particular to a kind of electrostatic chuck and reaction chamber.
Background technique
Electrostatic chuck be reaction chamber in key components and parts, for wafer is supported, is fixed and temperature control.Figure
1 is a kind of structural schematic diagram of the electrostatic chuck provided in the prior art, as shown in Figure 1, electrostatic chuck include from top to bottom according to
Ceramic layer 1, heating layer 2 and the pedestal 3 of secondary setting.Wherein, be provided with adsorption electrode in ceramic layer 1, when wafer be placed on it is quiet
When on electric card disk, by the way that electrostatic adsorption force can be generated between adsorption electrode and wafer to adsorption electrode application DC voltage,
So as to realize the fixation to wafer.After wafer completes processing, the identical backward voltage of size is applied to adsorption electrode, with
Release the absorption to wafer.
Heating layer 2 is used to control the temperature of wafer.It is provided with cooling duct in pedestal 3, for making jointly with heating layer 2
It is finished the temperature control of pairs of wafer.In addition, being additionally provided with a liter needle in reaction chamber, this liter of needle can be on electrostatic chuck
It rises or decline, the wafer for that will complete processing jacks up, be detached from wafer and electrostatic chuck, so that manipulator takes wafer away.
In said structure, it is all made of bonding agent between ceramic layer 1, heating layer 2 and pedestal 3 to be bonded, binder one
As be silica gel, in order to pedestal carry out resistant to plasma processing, be generally coated with a strata acid imide (polyimide) in base-plates surface
Film, meanwhile, bonding agent and polyimides are also largely used in heating layer 2.Since polyimides and silica gel are all semiconductor material
Material is equivalent in wafer to foring series capacitance equivalent one by one between ground.In the technical process of wafer, wafer and quiet
Electric card disk is in radio frequency environment, and adsorption electrode adsorbs wafer by high-voltage dc voltage, this makes concatenated electricity
Appearance constantly charges, and when clamping voltage removes and after plasma extinguishment, the charged lotus of capacitor does not discharge approach, with making
With the growth of time, the residual charge inside electrostatic chuck constantly accumulates and nonunf ormity is gradually obvious, so that wafer office
Portion is continuously increased by the attraction of residual charge, is caused when a liter needle jacks up wafer, and wafer easily shifts, as long as and sending out
The electrostatic chuck of wafer offset was given birth to, even if replacement board, the problem of wafer offset occurs again is also easy, this phenomenon occurs
When, the electrostatic chuck that can only more renew causes the increase of operating cost.Although Partial charge can be neutralized by desorbing,
There may be reversed pressurizations if desorbing overlong time, thus it is larger to control difficulty, and wastes time.
Utility model content
The utility model aims to solve at least one of the technical problems existing in the prior art, proposes a kind of electrostatic chuck
And reaction chamber, it can not be discharged with the residual charge solved the problems, such as in electrostatic chuck in the prior art.
As the one side of the utility model, the utility model provides a kind of electrostatic chuck, including pedestal and setting
Heating layer on the base, wherein electrostatic chuck further includes charge releasing unit, and charge releasing unit is used for pedestal and heating
Layer is disconnected or is conducted with ground.
Wherein, charge releasing unit includes charge release circuit, charge release circuit ground connection, and respectively with pedestal and heating
Layer electrical connection, and it is provided with on-off switch on charge release circuit, for being switched on or switched off charge release circuit.
Wherein, both pedestal and heating layer setting that is electrically insulated；Charge release circuit includes main road, the first branch and second
Road, wherein the first branch and second branch are electrically connected with pedestal and heating layer respectively, and the first branch and second branch and master
Road series connection；Main road ground connection；
On-off switch is one, and is arranged on main road；Alternatively,
On-off switch is two, and is separately positioned in the first branch and second branch.
Wherein, both pedestal and heating layer conduct setting；Charge release circuit includes main road, main road and pedestal or adds
Thermosphere electrical connection, and main road is grounded；On-off switch is arranged on main road.
Wherein, which is characterized in that protective resistance is provided on main road.
Wherein, heating layer includes heater layer and the even thermosphere that is arranged on heater layer；Charge release circuit and even heat
Layer electrical connection.
Wherein, it is provided with the first protective layer between even thermosphere and heater layer, and deviates from even thermosphere in heater layer
Side be provided with the second protective layer, and be provided with adhesive layer between the first protective layer and even thermosphere.
Wherein, pedestal is connected through a screw thread and conducts with heating layer.
Wherein, charge releasing unit further includes two feed electrodes, and two feed electrodes are separately positioned on heating layer and base
In seat, and charge release circuit is electrically connected with two feed electrodes respectively.
As the another aspect of the utility model, the utility model additionally provides a kind of reaction chamber, including electrostatic chuck,
Wherein, electrostatic chuck is electrostatic chuck provided by the utility model.
The utility model has the following beneficial effects:
A kind of electrostatic chuck provided by the utility model is disconnected pedestal and heating layer by charge releasing unit with ground
Or conduct, it, can be with the residual charge inside release electrostatic chuck by charge releasing unit after technique terminates, it can be with
Avoid the problem that wafer shifts when being jacked up caused by constantly accumulating because of residual charge.
A kind of reaction chamber provided by the utility model comprising electrostatic chuck provided by the utility model, when technique knot
After beam, by the residual charge inside charge releasing unit release electrostatic chuck, avoid leading because residual charge constantly accumulates
The problem of wafer of cause shifts when being jacked up.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram for electrostatic chuck that the prior art provides；
Fig. 2 is a kind of structural schematic diagram for electrostatic chuck that the utility model first embodiment provides；And
Fig. 3 is a kind of structural schematic diagram for electrostatic chuck that the utility model second embodiment provides.
Wherein,
1- ceramic layer；2- heating layer；3- pedestal；10- adsorption layer；20- heating layer；30- pedestal；6- on-off switch；7- is protected
Protect resistance；8- screw thread.
Specific embodiment
To make those skilled in the art more fully understand the technical solution of the utility model, come with reference to the accompanying drawing to this
The electrostatic chuck and reaction chamber that utility model provides are described in detail.
Fig. 2 is a kind of structural schematic diagram for electrostatic chuck that the utility model first embodiment provides, as shown in Fig. 2, this
Utility model embodiment provides a kind of electrostatic chuck, including pedestal 30 and the heating layer being arranged on pedestal 30 20, electrostatic
Chuck further includes charge releasing unit, and charge releasing unit is used to that pedestal and heating layer to be disconnected or be conducted with ground.
A kind of electrostatic chuck provided by the utility model is disconnected pedestal and heating layer by charge releasing unit with ground
Or conduct, it, can be with the residual charge inside release electrostatic chuck by charge releasing unit after technique terminates, it can be with
Avoid the problem that wafer shifts when being jacked up caused by constantly accumulating because of residual charge.
In the present embodiment, charge releasing unit includes charge release circuit, charge release circuit ground connection, and respectively with base
Seat 30 and heating layer 20 are electrically connected, also, are provided with on-off switch on charge release circuit, are released for being switched on or switched off charge
Electric discharge road.
As a kind of specific embodiment of charge release circuit, as shown in Fig. 2, charge release circuit includes main road,
One branch and second branch, wherein the first branch and second branch are electrically connected with pedestal 30 and heating layer 20 respectively, and first
Branch and second branch are connected with main road, main road ground connection.In the present embodiment, pedestal 30 is electrically insulated with 20 the two of heating layer and sets
It sets, in this case, is respectively grounded pedestal 30 and heating layer 20 by the first branch and second branch.
In the present embodiment, the quantity of on-off switch 6 is two, is separately positioned in the first branch and second branch.This
Sample can individually control the first branch and second branch and be switched on or switched off with ground, to discharge the residual of pedestal 30 and heating layer 20
Remaining charge.
It should be noted that in the present embodiment, the quantity of on-off switch is two, and be separately positioned on the first branch and
In second branch, but the utility model is not limited thereto, and in practical applications, the quantity of on-off switch may be one,
And it is arranged on main road.
Optionally, charge releasing unit further includes two feed electrode (not shown)s, and two feed electrodes are set respectively
It sets in heating layer 20 and pedestal 30, and the first branch, second branch are electrically connected with two feed electrodes respectively.It is presented by setting
Enter electrode, be capable of increasing the contact area of charge release circuit and heating layer 30, pedestal 30, to improve the stabilization of charge release
Property.
In the present embodiment, heating layer 20 includes heater layer and the even thermosphere being arranged on the heater layer, heater
Layer heats chip for generating, and the heat that even thermosphere is used to that heating layer to be made to generate is more uniform.Since even thermosphere is to add
It is one layer most upper in thermosphere 20, the bottom surface of pedestal be in pedestal most under one layer, charge release circuit is connected into even thermosphere and pedestal
Bottom surface, residual charge can be made to discharge to the greatest extent.
In the present embodiment, the even thermosphere in charge release circuit connection heating layer 20, but the utility model does not limit to
In this, in practical applications, charge release circuit may also connect to other conductive layers in heating layer 20.Specifically, it heats
Layer 20 further includes the first protective layer, the second protective layer and adhesive layer, and the first protective layer is arranged in even thermosphere and heater
Between layer, the second protective layer is arranged in the side away from even thermosphere of heater layer, adhesive layer setting in the first protective layer and
Between even thermosphere, charge release circuit can connect any position into the first protective layer, the second protective layer and adhesive layer
It sets.
In the present embodiment, charge releasing unit further includes the protective resistance 7 being arranged on main road, forceful electric power occurs for working as
When pressure or short circuit current, main road is automatically cut off, to protect electrostatic chuck and personal safety.
As shown in Fig. 2, electrostatic chuck further includes the adsorption layer 10 being arranged on heating layer 20, suction is provided in adsorption layer 10
Attached electrode, by the way that electrostatic adsorption force can be generated between adsorption electrode and wafer to adsorption electrode application DC voltage, thus
The fixation to wafer may be implemented, after technique terminates, the identical backward voltage of size is applied to adsorption electrode, to release to crystalline substance
Round absorption.
In the present embodiment, after technique terminates, Contact-sorption first is carried out to wafer, Partial charge is discharged, then leads to again
Charge release power supply provided by the utility model is crossed, pedestal 30 and heating layer 20 are conducted with ground, thoroughly to discharge remnants
Charge.
Fig. 3 is a kind of structural schematic diagram for electrostatic chuck that the utility model second embodiment provides, the present embodiment provides
Electrostatic chuck compared with first embodiment, difference is: the structure of charge release circuit is different.As shown in figure 3, pedestal 30
Setting is conducted with 20 the two of heating layer, charge release circuit includes main road, and main road is electrically connected with pedestal 30, and main road is grounded,
On-off switch 6 is arranged on main road.
Pedestal 30 includes: to connect and conduct by screw thread 8 with the mode that heating layer 20 is electrically connected, and specifically, is being heated
Threaded hole is set in any one in layer 20 and pedestal 30, there is screw thread 8 in screw thread sky, bolt is provided in another one, lead to
It crosses bolt to connect with screw thread 8, to realize between the two conduct.Alternatively, will be separately positioned in pedestal 30 and heating layer 20
Two feed electrodes weld together.
In the present embodiment, main road is electrically connected with pedestal 30, but the utility model is not limited thereto, in practical application
In, main road can also be connected with heating layer 20, as long as can be realized pedestal 30 and heating layer 20 be electrically connected.
As another technical solution, the utility model embodiment additionally provides a kind of reaction chamber, including electrostatic chuck,
The electrostatic chuck is electrostatic chuck provided by the utility model.
Reaction chamber provided by the utility model comprising electrostatic chuck provided by the utility model is discharged by charge
Residual charge inside unit release electrostatic chuck avoids wafer hair when being jacked up caused by constantly accumulating because of residual charge
The problem of raw offset.
It is understood that embodiment of above is merely to illustrate that the principles of the present invention and uses exemplary
Embodiment, however the utility model is not limited thereto.For those skilled in the art, this is not being departed from
In the case where the spirit and essence of utility model, various changes and modifications can be made therein, these variations and modifications are also considered as this reality
With novel protection scope.
Claims (10)
1. a kind of electrostatic chuck, including pedestal and the heating layer being arranged on the pedestal, which is characterized in that the electrostatic card
Disk further includes charge releasing unit, and the charge releasing unit is used for the pedestal and heating layer is disconnected with ground or conductance
It is logical.
2. electrostatic chuck according to claim 1, which is characterized in that the charge releasing unit includes charge release electricity
Road, the charge release circuit ground connection, and be electrically connected respectively with the pedestal and heating layer, and in the charge release circuit
On be provided with on-off switch, for being switched on or switched off the charge release circuit.
3. electrostatic chuck according to claim 2, which is characterized in that the setting that is electrically insulated of both the pedestal and heating layer；
The charge release circuit includes main road, the first branch and second branch, wherein the first branch and second branch respectively with
The pedestal and heating layer electrical connection, and the first branch and second branch are connected with the main road；The main road ground connection；
The on-off switch is one, and is arranged on the main road；Alternatively,
The on-off switch is two, and is separately positioned in the first branch and second branch.
4. electrostatic chuck according to claim 2, which is characterized in that both the pedestal and heating layer conduct setting；
The charge release circuit includes main road, and the main road is electrically connected with the pedestal or heating layer, and the main road is grounded；Institute
On-off switch is stated to be arranged on the main road.
5. electrostatic chuck according to claim 3 or 4, which is characterized in that be provided with protective resistance on the main road.
6. electrostatic chuck according to claim 2, which is characterized in that the heating layer includes heater layer and is arranged in institute
State the even thermosphere on heater layer；The charge release circuit is electrically connected with the even thermosphere.
7. electrostatic chuck according to claim 6, which is characterized in that set between the even thermosphere and the heater layer
It is equipped with the first protective layer, and the side away from the even thermosphere of the heater layer is provided with the second protective layer, and
Adhesive layer is provided between first protective layer and the even thermosphere.
8. electrostatic chuck according to claim 4, which is characterized in that the pedestal is connected through a screw thread with the heating layer
And it conducts.
9. electrostatic chuck according to claim 2, which is characterized in that the charge releasing unit further includes two feed-in electricity
Pole, two feed electrodes are separately positioned in the heating layer and the pedestal, and the charge release circuit respectively with
Two feed electrode electrical connections.
10. a kind of reaction chamber, including electrostatic chuck, which is characterized in that the electrostatic chuck is institute any in claim 1-9
State electrostatic chuck.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821195261.3U CN208478311U (en) | 2018-07-26 | 2018-07-26 | Electrostatic chuck and reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821195261.3U CN208478311U (en) | 2018-07-26 | 2018-07-26 | Electrostatic chuck and reaction chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208478311U true CN208478311U (en) | 2019-02-05 |
Family
ID=65208877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821195261.3U Active CN208478311U (en) | 2018-07-26 | 2018-07-26 | Electrostatic chuck and reaction chamber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208478311U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111952231A (en) * | 2019-05-14 | 2020-11-17 | 北京北方华创微电子装备有限公司 | Charge transfer device and related plasma system |
| CN113270355A (en) * | 2021-05-14 | 2021-08-17 | 北京北方华创微电子装备有限公司 | Electrostatic adsorption bearing device |
-
2018
- 2018-07-26 CN CN201821195261.3U patent/CN208478311U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111952231A (en) * | 2019-05-14 | 2020-11-17 | 北京北方华创微电子装备有限公司 | Charge transfer device and related plasma system |
| WO2020228407A1 (en) * | 2019-05-14 | 2020-11-19 | 北京北方华创微电子装备有限公司 | Charge transport apparatus and related plasma system |
| TWI738250B (en) * | 2019-05-14 | 2021-09-01 | 大陸商北京北方華創微電子裝備有限公司 | Charge transferring device and associated plasma system |
| CN113270355A (en) * | 2021-05-14 | 2021-08-17 | 北京北方华创微电子装备有限公司 | Electrostatic adsorption bearing device |
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