CN208444827U - A kind of mounting structure of Surface Mount Metal Oxide Semiconductor Field Effect Transistor - Google Patents
A kind of mounting structure of Surface Mount Metal Oxide Semiconductor Field Effect Transistor Download PDFInfo
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- CN208444827U CN208444827U CN201820262240.2U CN201820262240U CN208444827U CN 208444827 U CN208444827 U CN 208444827U CN 201820262240 U CN201820262240 U CN 201820262240U CN 208444827 U CN208444827 U CN 208444827U
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- metal oxide
- semiconductor field
- oxide semiconductor
- effect transistor
- field effect
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Abstract
The utility model discloses the mounting structure of Surface Mount Metal Oxide Semiconductor Field Effect Transistor, wherein is installed on radiator, mounting structure includes power amplifier board and the pressing plate above power amplifier board；Power amplifier board includes at least one Metal Oxide Semiconductor Field Effect Transistor for being placed in the glass-fiber-plate of radiator and being mounted on glass plate surface from bottom to top；Pressing plate is fixed on Metal Oxide Semiconductor Field Effect Transistor.The technical solution of the utility model beneficial effect is: providing a kind of mounting structure of Surface Mount Metal Oxide Semiconductor Field Effect Transistor, cost can reduce using glass-fiber-plate, and it is able to suppress deformation, guarantee that heat dissipation is uniform, the reliability that Surface Mount Metal Oxide Semiconductor Field Effect Transistor is connect on glass-fiber-plate with radiator can be improved using pressing plate, and then improve the vibration resistance of integral installation structure.
Description
Technical field
The utility model relates to semi-conductor device technology field more particularly to a kind of Surface Mount metal oxide semiconductcor field effects
Answer the mounting structure of transistor.
Background technique
During actual, power device is widely used in the fields such as frequency converter, inverter, electric car, in work
Very big loss can be generated when making, these losses are usually expressed as heat, so must add radiator, most common is exactly to incite somebody to action
Power device is installed on a heat sink.
Currently the installation of Surface Mount Surface Mount Metal Oxide Semiconductor Field Effect Transistor is mainly pasted using by aluminum substrate
The mode of dress on a heat sink, specific structure is as shown in Figure 1, include aluminum substrate A1, Surface Mount metal oxide semiconductor field-effect
Crystal A2, radiator A3 and heat-conducting silicone grease A4；Aluminum substrate is made of glass-fiber-plate and aluminium sheet, Surface Mount metal oxide semiconductcor field effect
Transistor is answered to organize success rate module on aluminum substrate, then on a heat sink by the attachment of entire power module, interface filling is thermally conductive
Silicone grease, which structure is simple, easy for installation, also can to the heat dissipation problem of Surface Mount Metal Oxide Semiconductor Field Effect Transistor
It meets the requirements, but there is a problem in that: (1) compared to traditional glass-fiber-plate, aluminum substrate is multilayered structure, at high cost；(2) aluminium
Partially soft and epoxy glass cloth laminated board is easily deformed, easily-deformable under Long Time Thermal stress impact, uneven so as to cause heat dissipation；
(3) aluminum substrate connect the viscosity mainly by Heat Conduction Material with radiator, may disengage under high vibration, leads to Surface Mount metal
Oxide semiconductor field effect transistor thermal failure.
Summary of the invention
For the above-mentioned problems in the prior art, a kind of Surface Mount metal oxide semiconductor field effect transistor is now provided
The mounting structure of pipe.
Specific technical solution is as follows:
A kind of mounting structure of Surface Mount Metal Oxide Semiconductor Field Effect Transistor, wherein be installed on radiator, institute
Stating mounting structure includes power amplifier board and the pressing plate above the power amplifier board；
The power amplifier board includes being placed in the glass-fiber-plate of the radiator and being mounted on the glass plate surface from bottom to top
At least one Metal Oxide Semiconductor Field Effect Transistor；
The pressing plate is fixed on the Metal Oxide Semiconductor Field Effect Transistor.
Preferably, the board surface sticked multiple Metal Oxide Semiconductor Field Effect Transistor of the glass.
Preferably, the contact surface of each Metal Oxide Semiconductor Field Effect Transistor and pressing plate attachment one is slow
Rush gasket.
Preferably, the buffering spacer is made of silicon rubber.
Preferably, it is provided with bolt hole on the pressing plate, the bolt hole is passed through by bolt and is fixed on the radiator
On.
Preferably, the bolt sequentially passes through the buffering spacer, the metal oxide semiconductcor field effect from top to bottom
Answer transistor and the glass-fiber-plate.
Preferably, a heat-conducting pad is filled between the power amplifier board and the heat sink interface.
Preferably, radiating fin is arranged in the one side of the radiator, and the power amplifier board is installed on the radiator and institute
State the opposite another side of radiating fin.
The technical solution of the utility model beneficial effect is: it is brilliant to provide a kind of Surface Mount metal oxide semiconductor field-effect
The mounting structure of body pipe can reduce cost using glass-fiber-plate, and be able to suppress deformation, guarantee heat dissipation uniformly, using pressing plate
It can be improved the reliability that Surface Mount Metal Oxide Semiconductor Field Effect Transistor is connect on glass-fiber-plate with radiator, Jin Erti
The vibration resistance of high integral installation structure.
Detailed description of the invention
With reference to appended attached drawing, more fully to describe the embodiments of the present invention.However, appended attached drawing only illustrate and
It illustrates, does not constitute the limitation to the scope of the utility model.
Fig. 1 is the mounting structure of Surface Mount Metal Oxide Semiconductor Field Effect Transistor in the prior art；
Fig. 2 is the mounting structure of Surface Mount Metal Oxide Semiconductor Field Effect Transistor in the utility model.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are in the premise for not making creative work
Under every other embodiment obtained, fall within the protection scope of the utility model.
It should be noted that in the absence of conflict, the feature in the embodiments of the present invention and embodiment can
To be combined with each other.
The utility model is described in further detail in the following with reference to the drawings and specific embodiments, but not as the utility model
It limits.
The utility model includes a kind of mounting structure of Surface Mount Metal Oxide Semiconductor Field Effect Transistor, wherein peace
Loaded on radiator 1, mounting structure includes power amplifier board 2 and the pressing plate 3 above power amplifier board 2；
Power amplifier board 2 includes being placed in the glass-fiber-plate 20 of radiator 1 and being mounted on 20 surface of glass-fiber-plate at least from bottom to top
One Metal Oxide Semiconductor Field Effect Transistor 21；
Pressing plate 3 is fixed on Metal Oxide Semiconductor Field Effect Transistor 21.
By the technical solution of the mounting structure of above-mentioned Surface Mount Metal Oxide Semiconductor Field Effect Transistor, using by glass
The power amplifier board 2 that fine plate 20 and the Metal Oxide Semiconductor Field Effect Transistor 21 for being mounted on 20 surface of glass-fiber-plate are constituted, is compared
Compared with aluminum substrate, material cost at least reduces 30%, using pressing plate 3, can pass through the change of power amplifier board 2 of the pressure restraining of application
Shape, and 21 temperature difference of each Metal Oxide Semiconductor Field Effect Transistor is at 5 degrees Celsius hereinafter, heat dissipation uniformly, passes through pressure
The pressure that plate 3 applies further ensures the connective stability of mounting structure Yu radiator 1, and is improved by buffering spacer 4
The vibration resistance of integral installation structure.
It should be noted that Metal Oxide Semiconductor Field Effect Transistor is Mosfet power device in the art
Part, details are not described herein.
In a kind of preferably embodiment, the multiple Metal Oxide Semiconductor Field Effect Transistor of 20 surface mount of glass-fiber-plate
21。
In a kind of preferably embodiment, the contact of each Metal Oxide Semiconductor Field Effect Transistor 21 and pressing plate 3
Face paste fills a buffering spacer 4.
In a kind of preferably embodiment, buffering spacer 4 is made of silicon rubber.
In a kind of preferably embodiment, pressing plate 3 is fixed by bolts on buffering spacer 4.
Specifically, when pressing plate 3 applies pressure, each Metal Oxide Semiconductor Field Effect Transistor 21 is surface-pasted
Buffering spacer 4 alleviates the pressure of pressing plate 3, it is suppressed that the deformation of power amplifier board 2, and buffering spacer 4 uses silastic material system
At, have good resiliency, improve the vibration resistance of integral installation structure.
In a kind of preferably embodiment, it is provided with bolt hole 30 on pressing plate 3, is passed through by bolt (not shown in FIG.)
Bolt hole 30 is fixed on radiator 1.
In a kind of preferably embodiment, bolt (not shown in FIG.) sequentially passes through buffering spacer 4, metal from top to bottom
Oxide semiconductor field effect transistor 21 and glass-fiber-plate 20.
Specifically, it is provided with bolt hole 30 on pressing plate 3, bolt hole 30 is passed through by bolt (not shown in FIG.), from upper
Buffering spacer 4 is sequentially passed through under and, Metal Oxide Semiconductor Field Effect Transistor 21 and glass-fiber-plate 20 are fixed on radiator 1
On, so that the pressure that application of the pressing plate 3 to each Metal Oxide Semiconductor Field Effect Transistor 21 is stable, further makes
The vibration resistance of integral installation structure improves.
In a kind of preferably embodiment, power amplifier board 2 and radiator fill a heat-conducting pad 5 between 1 interface.
Specifically, heat-conducting pad 5 has good insulating properties and thermal conductivity, be filled in power amplifier board 2 and 1 interface of radiator it
Between, enable each Metal Oxide Semiconductor Field Effect Transistor 21 equably to transfer heat to radiator 1.
In a kind of preferably embodiment, radiating fin 10 is arranged in the one side of radiator 1, and power amplifier board 2 is installed on radiator 1
The upper another side opposite with radiating fin 10.
In a kind of preferably embodiment, relative to aluminum substrate, the multiple metal oxides of 20 surface mount of glass-fiber-plate are partly led
Body field effect transistor 21, to constitute power amplifier board 2, cost is relatively low, and will not under prolonged Thermal Stress
Deformation, enables each 21 Homogeneouslly-radiating of Metal Oxide Semiconductor Field Effect Transistor；
Further, using heat-conducting pad 5, even if integral installation structure will not influence under strenuous vibration effect
Heat dissipation effect between glass-fiber-plate 20 and radiator 1；
Further, it is provided with bolt hole 30 on pressing plate 3, it is fixed across bolt hole 30 by bolt (not shown in FIG.)
In on radiator 1, sequentially passing through buffering spacer 4, Metal Oxide Semiconductor Field Effect Transistor 21, glass-fiber-plate 20 from top to bottom
And heat-conducting pad 5, buffering spacer 4 are used to buffer the pressure of the application of pressing plate 3, can stablize entire installation using 3 one side of pressing plate
Structure improves the vibration resistance of entire mounting structure, on the other hand provides pressure for power amplifier board 2, reduces power amplifier board 2, heat conductive pad
Thermal contact resistance between piece 5 and radiator 1 further improves the heat-sinking capability of whole system.
The technical solution of the utility model beneficial effect is: it is brilliant to provide a kind of Surface Mount metal oxide semiconductor field-effect
The mounting structure of body pipe can reduce cost using glass-fiber-plate, and be able to suppress deformation, guarantee heat dissipation uniformly, using pressing plate
It can be improved the reliability that Surface Mount Metal Oxide Semiconductor Field Effect Transistor is connect on glass-fiber-plate with radiator, Jin Erti
The vibration resistance of high integral installation structure.
The foregoing is merely the utility model preferred embodiment, be not intended to limit the embodiments of the present invention and
Protection scope should can appreciate that all in the utility model specification and diagram to those skilled in the art
Hold made equivalent replacement and obviously change obtained scheme, the protection model of the utility model should all be included in
In enclosing.
Claims (8)
1. a kind of mounting structure of Surface Mount Metal Oxide Semiconductor Field Effect Transistor, which is characterized in that be installed on radiator
On, the mounting structure includes power amplifier board and the pressing plate above the power amplifier board；
The power amplifier board includes being placed in the glass-fiber-plate of the radiator and being mounted on the glass plate surface extremely from bottom to top
A few Metal Oxide Semiconductor Field Effect Transistor；
The pressing plate is fixed on the Metal Oxide Semiconductor Field Effect Transistor.
2. mounting structure according to claim 1, which is characterized in that the board surface sticked multiple metal oxygens of glass
Compound semiconductor field effect transistor.
3. mounting structure according to claim 1, which is characterized in that each metal oxide semiconductor field-effect is brilliant
The contact surface of body pipe and the pressing plate mounts a buffering spacer.
4. mounting structure according to claim 3, which is characterized in that the buffering spacer is made of silicon rubber.
5. mounting structure according to claim 3, which is characterized in that be provided with bolt hole on the pressing plate, pass through bolt
It is fixed on the radiator across the bolt hole.
6. mounting structure according to claim 5, which is characterized in that the bolt sequentially passes through the buffering from top to bottom
Gasket, the Metal Oxide Semiconductor Field Effect Transistor and the glass-fiber-plate.
7. mounting structure according to claim 1, which is characterized in that filled out between the power amplifier board and the heat sink interface
Fill a heat-conducting pad.
8. mounting structure according to claim 1, which is characterized in that radiating fin, institute is arranged in the one side of the radiator
It states power amplifier board and is installed on another side opposite with the radiating fin on the radiator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820262240.2U CN208444827U (en) | 2018-02-22 | 2018-02-22 | A kind of mounting structure of Surface Mount Metal Oxide Semiconductor Field Effect Transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820262240.2U CN208444827U (en) | 2018-02-22 | 2018-02-22 | A kind of mounting structure of Surface Mount Metal Oxide Semiconductor Field Effect Transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208444827U true CN208444827U (en) | 2019-01-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820262240.2U Active CN208444827U (en) | 2018-02-22 | 2018-02-22 | A kind of mounting structure of Surface Mount Metal Oxide Semiconductor Field Effect Transistor |
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| CN (1) | CN208444827U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108281391A (en) * | 2018-02-22 | 2018-07-13 | 宁波央腾汽车电子有限公司 | A kind of mounting structure of Surface Mount mos field effect transistor |
-
2018
- 2018-02-22 CN CN201820262240.2U patent/CN208444827U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108281391A (en) * | 2018-02-22 | 2018-07-13 | 宁波央腾汽车电子有限公司 | A kind of mounting structure of Surface Mount mos field effect transistor |
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