CN208433366U - A kind of etching apparatus - Google Patents
A kind of etching apparatus Download PDFInfo
- Publication number
- CN208433366U CN208433366U CN201821267825.XU CN201821267825U CN208433366U CN 208433366 U CN208433366 U CN 208433366U CN 201821267825 U CN201821267825 U CN 201821267825U CN 208433366 U CN208433366 U CN 208433366U
- Authority
- CN
- China
- Prior art keywords
- etching apparatus
- air accumulator
- quartz ampoule
- reaction chamber
- polyfluortetraethylene pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005530 etching Methods 0.000 title claims abstract description 44
- 239000010453 quartz Substances 0.000 claims abstract description 55
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000003708 ampul Substances 0.000 claims abstract description 54
- 238000006243 chemical reaction Methods 0.000 claims abstract description 50
- 239000012495 reaction gas Substances 0.000 claims abstract description 24
- 239000007789 gas Substances 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- RWNKSTSCBHKHTB-UHFFFAOYSA-N Hexachloro-1,3-butadiene Chemical compound ClC(Cl)=C(Cl)C(Cl)=C(Cl)Cl RWNKSTSCBHKHTB-UHFFFAOYSA-N 0.000 claims description 8
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 7
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 claims description 4
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 229960004065 perflutren Drugs 0.000 claims description 4
- YBMDPYAEZDJWNY-UHFFFAOYSA-N 1,2,3,3,4,4,5,5-octafluorocyclopentene Chemical compound FC1=C(F)C(F)(F)C(F)(F)C1(F)F YBMDPYAEZDJWNY-UHFFFAOYSA-N 0.000 claims description 3
- 239000004341 Octafluorocyclobutane Substances 0.000 claims description 3
- 150000001336 alkenes Chemical class 0.000 claims description 3
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 claims description 3
- 235000019407 octafluorocyclobutane Nutrition 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract description 15
- 230000007547 defect Effects 0.000 abstract description 8
- 235000012431 wafers Nutrition 0.000 description 22
- 239000000047 product Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 9
- 239000012634 fragment Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229940058401 polytetrafluoroethylene Drugs 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- 239000002894 chemical waste Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ANVRDUDUNKHRMI-UHFFFAOYSA-N C1CCC1.[F] Chemical compound C1CCC1.[F] ANVRDUDUNKHRMI-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
The utility model provides a kind of etching apparatus, comprising: quartz ampoule, reaction gas generate plasma in the quartz ampoule；Polyfluortetraethylene pipe is connect with the quartz ampoule by isolating valve；Reaction chamber is connected with the polyfluortetraethylene pipe, and the plasma is passed through in the reaction chamber from the quartz ampoule, isolating valve and polyfluortetraethylene pipe.It by the isolating valve between quartz ampoule and polyfluortetraethylene pipe, realizes when replacing quartz ampoule, reduces polyfluortetraethylene pipe the space occupied, vacuum breaker space can be reduced, to reduce the time needed for vacuum breaker, and then reduce the PM time；It can reduce after vacuum breaker simultaneously, the particle risk in polyfluortetraethylene pipe avoids bringing particle in reaction chamber into, to avoid causing wafer to be etched defect, improves product quality.
Description
Technical field
The utility model belongs to semiconductor processing equipment field, is related to a kind of etching apparatus.
Background technique
Etching, be the considerable step of one of semiconductor fabrication process, be associated with photoetching it is graphical
(pattern) a kind of main technique handled.The understanding of so-called etching, actually narrow sense is exactly photoetching corrosion, and first passing through photoetching will
Photoresist carries out photolithographic exposure processing, then realizes corrosion otherwise, the part removed needed for disposing.
The most simple the most frequently used classification of etching is: dry etching and wet etching.Wherein, it is the advantages of wet etching: selection
Good, the reproducible, high production efficiency of property, equipment are simple, at low cost, the disadvantage is that: carve it is serious, poor to the controlling of figure,
It cannot be used for small characteristic size, a large amount of chemical waste fluid can be generated；The advantages of dry etching is: anisotropy is good, selects ratio
High, controllability, flexibility, reproducible, hachure safe operation easily realize automation, do not draw without chemical waste fluid, treatment process
It is high to enter pollution, cleanliness, the disadvantage is that: it is at high cost, the device is complicated.
Dry etching principal mode has pure chemical process, pure physical process, physical and chemical process, common dry etching packet
Include plasma etching (PE), reactive ion etching (RIE) and chemical drying method etching (CDE).
Traditional CDE equipment includes quartz ampoule, polyfluortetraethylene pipe and reaction chamber, between polyfluortetraethylene pipe and reaction chamber
It is connected by isolating valve.But it due to the pollution of quartz ampoule, damage, when replacing quartz ampoule, needs first to connect poly- four
The isolating valve of fluoride tubes and reaction chamber is closed, and reaction chamber and polyfluortetraethylene pipe isolation is come, to reduce the sky of vacuum breaker
Between, and the time needed for reducing vacuum breaker.But due to still having biggish space inside polyfluortetraethylene pipe and quartz ampoule, still
Need the more time to vacuum breaker, therefore the PM time is longer；And after vacuum breaker, polyfluortetraethylene pipe can have particle
Risk can bring the particle inside polyfluortetraethylene pipe in reaction chamber into subsequent processes, cause dirt to wafer to be etched
The defects of dye, scuffing, fragment, reduce product quality.
Based on the above, a kind of etching apparatus is provided, to reduce needed for equipment vacuum breaker when replacing quartz ampoule
Time, to reduce the PM time；It reduces after vacuum breaker simultaneously, the particle risk in polyfluortetraethylene pipe is avoided particle band
Into in reaction chamber, so that the defects of avoiding the pollution caused by wafer to be etched, scuffing, fragment, improves product quality, it has also become
This field urgent problem to be solved.
Utility model content
In view of the foregoing deficiencies of prior art, it the purpose of this utility model is to provide a kind of etching apparatus, is used for
Solve CDE equipment in the prior art and still need to the more time to vacuum breaker when replacing quartz ampoule so that the PM time compared with
It is long；And after vacuum breaker, polyfluortetraethylene pipe can have the risk of particle, can be by polyfluortetraethylene pipe in subsequent processes
The particle of the inside is brought into reaction chamber, wafer to be etched is polluted, is scratched, fragment the defects of, reduce asking for product quality
Topic.
In order to achieve the above objects and other related objects, the utility model provides a kind of etching apparatus, comprising:
Quartz ampoule, reaction gas generate plasma in the quartz ampoule；
Polyfluortetraethylene pipe is connect with the quartz ampoule by isolating valve；
Reaction chamber is connected with the polyfluortetraethylene pipe, and the plasma is from the quartz ampoule, isolating valve and poly- four
Fluoride tubes are passed through in the reaction chamber.
Preferably, the etching apparatus further includes microwave plasma reactor, provides microwave for the quartz ampoule.
Preferably, the microwave plasma reactor includes the microwave plasma precursor reactant that driving frequency is 2.45GHz
Device.
Preferably, the junction of the polyfluortetraethylene pipe and the reaction chamber further includes the isolating valve.
Preferably, the etching apparatus further includes air accumulator, for storing the reaction gas, the air accumulator with it is described
Quartz ampoule is connected.
Preferably, the air accumulator include oxygen air accumulator, helium air accumulator, nitrogen air accumulator, carbon tetrafluoride air accumulator,
Perfluoroethane air accumulator, perfluoropropane air accumulator, octafluorocyclobutane air accumulator, hexachlorobutadiene air accumulator, the storage of octafluoro cyclopentene
One or more of gas tank, Nitrogen trifluoride air accumulator and the formed group of argon gas air accumulator.
Preferably, the isolating valve includes vacuum separation valve.
Preferably, the reaction chamber further includes electrostatic chuck, to adsorb and carry wafer.
Preferably, the etching apparatus further includes vacuum pump, and the vacuum pump is located at the reaction chamber bottom, for removing
Product in the reaction chamber.
Preferably, the product includes the plasma and the polymer that reaction generates.
Preferably, the vacuum pump includes molecular pump.
As described above, the etching apparatus of the utility model, has the advantages that by being located at quartz ampoule and polytetrafluoro
Isolating valve between ethylene tube is realized when replacing quartz ampoule, and the occupied space of polyfluortetraethylene pipe is reduced, and can be reduced brokenly true
Absolutely empty, to reduce the time needed for vacuum breaker, and then reduce the PM time；It can reduce after vacuum breaker simultaneously, polytetrafluoroethyl-ne
Particle risk in alkene pipe, avoids bringing particle in reaction chamber into, thus avoid caused by wafer to be etched pollution, scratch,
The defects of fragment, improves product quality.
Detailed description of the invention
Fig. 1 is shown as the structural schematic diagram of etching apparatus in the utility model.
Component label instructions
100 quartz ampoules
200 polyfluortetraethylene pipes
300 isolating valves
400 reaction chambers
500 microwave plasma reactors
600 air accumulators
700 electrostatic chucks
800 wafers
900 vacuum pumps
The flow direction of 110 reaction gas
Specific embodiment
The embodiments of the present invention is illustrated by particular specific embodiment below, those skilled in the art can be by this
Content disclosed by specification understands other advantages and effect of the utility model easily.
Please refer to Fig. 1.It should be clear that this specification structure depicted in this specification institute accompanying drawings, ratio, size etc., only to cooperate
The revealed content of specification, so that those skilled in the art understands and reads, being not intended to limit the utility model can be real
The qualifications applied, therefore do not have technical essential meaning, the tune of the modification of any structure, the change of proportionate relationship or size
It is whole, in the case where not influencing the effect of the utility model can be generated and the purpose that can reach, it should all still fall in the utility model institute
The technology contents of announcement obtain in the range of capable of covering.Meanwhile in this specification it is cited as "upper", "lower", "left", "right",
The term of " centre " and " one " etc. is merely convenient to being illustrated for narration, rather than to limit the enforceable range of the utility model,
Its relativeness is altered or modified, under the content of no substantial changes in technology, when being also considered as the enforceable scope of the utility model.
As shown in Figure 1, the utility model provides a kind of etching apparatus, comprising: quartz ampoule 100, polyfluortetraethylene pipe 200,
Isolating valve 300, reaction chamber 400.
Specifically, be connected between the quartz ampoule 100 and the polyfluortetraethylene pipe 200 by the isolating valve 300,
The polyfluortetraethylene pipe 200 is connected with the reaction chamber 400, and the isolating valve 300 is to replace the quartz ampoule 100
When, the isolating valve 300 is closed, the time needed for reducing the etching apparatus vacuum breaker, to reduce the PM time；It reduces simultaneously
After vacuum breaker, particle risk in the polyfluortetraethylene pipe 200 avoids bringing particle into the reaction chamber 400, thus
The defects of avoiding to pollution caused by wafer 800 to be etched, scuffing, fragment, improves product quality.100 conduct of quartz ampoule
Discharge tube, reaction gas generate plasma in the quartz ampoule 100, and the plasma is from the quartz ampoule 100, isolation
Valve 300 and polyfluortetraethylene pipe 200 are passed through in the reaction chamber 400, for the wafer being located in the reaction chamber 400
800 perform etching, and in Fig. 1, show the flow direction 110 of the reaction gas.In the present embodiment, use is corrosion-resistant, resistance to height
The quartz ampoule 100 of temperature is used as discharge tube, and in another embodiment, the corrosion resistant of other materials can also be used in the discharge tube
Erosion, material resistant to high temperature, herein with no restriction.
As an example, the etching apparatus further includes microwave plasma reactor 500, provided for the quartz ampoule 100
Microwave, the microwave plasma reactor 500 include the microwave plasma reactor that driving frequency is 2.45GHz.
Specifically, by the microwave plasma reactor 500, the reaction gas is sent out in the quartz ampoule 100
Raw glow discharge, is transformed into the active plasma, for the subsequent etching to the wafer 800.It is described micro-
Driving frequency those skilled in the art of wave plasma reactor 500 can be adjusted as needed, herein with no restriction.
As an example, the reaction gas includes oxygen, helium, nitrogen, carbon tetrafluoride, perfluoroethane, perfluoropropane, eight
One or more of fluorine cyclobutane, hexachlorobutadiene, octafluoro cyclopentene, Nitrogen trifluoride and argon gas.The etching apparatus
It further include air accumulator 600, for storing the reaction gas, the air accumulator 600 is connected with the quartz ampoule 100.This reality
It applies in example, using carbon tetrafluoride as the reaction gas, in another embodiment, other reaction gas can also be used, it is described
The type of reaction gas is herein with no restriction.
As an example, the air accumulator 600 includes oxygen air accumulator, helium air accumulator, nitrogen air accumulator, carbon tetrafluoride storage
Gas tank, perfluoroethane air accumulator, perfluoropropane air accumulator, octafluorocyclobutane air accumulator, hexachlorobutadiene air accumulator, octafluoro ring penta
One or more of alkene air accumulator, Nitrogen trifluoride air accumulator and argon gas air accumulator.The air accumulator 600 may also include temperature
Humidity controller, for showing, adjusting and controlling the temperature and humidity of the reaction gas in the air accumulator 600.The gas storage
The type of tank 600 is selected according to the reaction gas selected, herein with no restriction.In the present embodiment, due to selecting four
Fluorocarbons is as the reaction gas, therefore the air accumulator 600 includes the carbon tetrafluoride air accumulator.
Specifically, CDE is to be chemically reacted using the chemical activity atomic group in plasma with the material that is etched, from
And realize etching purpose.In the present embodiment, the reaction gas selects carbon tetrafluoride, and the reaction gas is entering the reaction
Before chamber 400, the excitation of the microwave for the 2.45GHz that the reaction gas is first provided in the microwave plasma reactor 500
Under, glow discharge occurs in the quartz ampoule 100 and generates the plasma, the plasma passes through the institute in open state
It states isolating valve 300 and enters the polyfluortetraethylene pipe 200, the reaction chamber 400 is then entered by the polyfluortetraethylene pipe 200
It is chemically reacted with the wafer 800 to be etched, to etch the wafer 800, completes the quarter to the wafer 800
Erosion.Wherein, since the plasma is formed in the quartz ampoule 100, not can avoid because the plasma with
The quartz ampoule 100 comes into contact in a large area and causes the pollution problem to the quartz ampoule 100, and when the microwave plasma is anti-
When the microwave power for answering device 500 to provide is excessive, the quartz ampoule 100 often softens, and causes the plasma
To the etching of the quartz ampoule 100, when especially with helium as the reaction gas, the quartz ampoule 100 be depleted compared with
To be serious, the quartz ampoule 100 need to be replaced.
As an example, the isolating valve 300 includes vacuum separation valve.
Specifically, the quartz ampoule 100 is connect with the quartz ampoule 100 by isolating valve 300, the isolating valve 300 is used
In being isolated to being located at the quartz ampoule 100 and the reaction gas in the polyfluortetraethylene pipe 200, it is described every
It is that one kind emphasizes the separation of two side liquids and the higher valve of safety from valve 300.It is replaced to the quartz ampoule 100
When, since the reaction chamber 400 is in vacuum state, need to by the isolating valve 300 to the quartz ampoule 100 carry out every
From to reduce the time needed for vacuum breaker, the reduction PM time, save the cost is improved efficiency.The isolating valve 300 is installed on
Between the quartz ampoule 100 and the polyfluortetraethylene pipe 200,200 vacuum breaker of polyfluortetraethylene pipe can be further reduced
The required time, to be further reduced the PM time, while by the isolating valve 300 be installed on the quartz ampoule 100 with it is described
It can also be avoided between polyfluortetraethylene pipe 200 when being replaced to the quartz ampoule 100, impurity particle is by the polytetrafluoro
Ethylene tube 200 is brought into the reaction chamber 400, thus avoid polluting the wafer 800, scratch, fragment the defects of, mention
The product quality of high subsequent preparation.In the present embodiment, the selection of isolating valve 300 fluid resistance is small, sealing surface is invaded by medium
Lose small, the relatively labor-saving, medium of opening and closing flow to it is unrestricted, not flow-disturbing, do not reduce that pressure, body are simple, structure length is short, manufacture work
The good and applied widely vacuum separation valve of skill, in another embodiment, other classes also can be selected in the isolating valve 300
Type, herein with no restriction.
As an example, the junction of the polyfluortetraethylene pipe 200 and the reaction chamber 400 further includes the isolating valve.
Specifically, due to the plasma through the polyfluortetraethylene pipe 200 enter the reaction chamber 400 in,
Unavoidable can have the plasma and contact and caused to the polyfluortetraethylene pipe with the polyfluortetraethylene pipe 200
200 pollution problem.Therefore the junction of the polyfluortetraethylene pipe 200 and the reaction chamber 400 also it is settable it is described every
It from valve, can further control when being replaced to the polyfluortetraethylene pipe 200, reduce needed for the etching apparatus vacuum breaker
Time, to reduce the PM time.In the present embodiment, not in the connection of the polyfluortetraethylene pipe 200 and the reaction chamber 400
The isolating valve is arranged in place, it is another be in example, those skilled in the art can select as needed, not limit herein
System.
As an example, the reaction chamber 400 further includes electrostatic chuck 700, to adsorb and carry the wafer 800.
Specifically, the upper surface of the electrostatic chuck 700 includes stomata, completed by the stomata to the wafer 800
Absorption and release, reduce the wafer 800 and slid from the upper surface of the electrostatic chuck 700 and make fragmented risk, it is described
700 upper surface of electrostatic chuck also may include the air drain being connected, herein with no restriction.
As an example, the etching apparatus further includes vacuum pump 900, the vacuum pump 900 is located at 400 bottom of reaction chamber
Portion, for removing the product in the reaction chamber 400, the product includes the plasma and the polymer that reaction generates.
Specifically, the air accumulator 600 provides the reaction gas for the etching apparatus, in the processing procedure process of etching
In, after the reaction gas generates the plasma by the microwave plasma reactor 500, the plasma into
Enter the reaction chamber 400, is chemically reacted with the wafer 800 to be etched being located on the electrostatic chuck 700, thus
The wafer 800 is etched, while will form reaction product in the reaction chamber 400, the product includes the poly- of reaction generation
Close object, extra described plasma etc., wherein the polymer usually has adhesiveness, can be adhered to the reaction chamber 400
Inner wall on, the polymer can be adhered to the surface of the wafer 800 after peeling off, cause the surface of the wafer 800 cannot
Required pattern is etched, the product quality of subsequent preparation is influenced.Therefore the product need to be discharged by institute using the vacuum pump 900
Reaction chamber 400 is stated, the wafer 800 of high quality is prepared.
As an example, the vacuum pump 900 includes molecular pump, molecular pump pumping speed with higher and compression ratio, it can
By the more efficient removal of the product in the reaction chamber 400, therefore, in the present embodiment described in the preferably described molecular pump conduct
Other types also can be selected in vacuum pump 900, in another embodiment, the vacuum pump 900, herein with no restriction.
In conclusion the etching apparatus of the utility model, passes through being isolated between quartz ampoule and polyfluortetraethylene pipe
Valve is realized when replacing quartz ampoule, is reduced polyfluortetraethylene pipe the space occupied, can be reduced etching apparatus vacuum breaker space, from
And the time needed for reducing etching apparatus vacuum breaker, and then reduce the PM time；It can reduce after vacuum breaker simultaneously, polytetrafluoroethylene (PTFE)
Particle risk in pipe, avoids bringing particle in reaction chamber into, to avoid polluting wafer to be etched, scratch, fragment
The defects of, improve product quality.So the utility model effectively overcomes various shortcoming in the prior art and has high industrial
Utility value.
The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications or change completed under mind and technical idea, should be covered by the claim of the utility model.
Claims (10)
1. a kind of etching apparatus characterized by comprising
Quartz ampoule, reaction gas generate plasma in the quartz ampoule；
Polyfluortetraethylene pipe is connect with the quartz ampoule by isolating valve；
Reaction chamber is connected with the polyfluortetraethylene pipe, and the plasma is from the quartz ampoule, isolating valve and polytetrafluoroethyl-ne
Alkene pipe is passed through in the reaction chamber.
2. etching apparatus according to claim 1, it is characterised in that: the etching apparatus further includes that microwave plasma is anti-
Device is answered, provides microwave for the quartz ampoule.
3. etching apparatus according to claim 1, it is characterised in that: the company of the polyfluortetraethylene pipe and the reaction chamber
The place of connecing further includes the isolating valve.
4. etching apparatus according to claim 1, it is characterised in that: the etching apparatus further includes air accumulator, for storing up
The reaction gas is deposited, the air accumulator is connected with the quartz ampoule.
5. etching apparatus according to claim 4, it is characterised in that: the air accumulator includes oxygen air accumulator, helium storage
Gas tank, nitrogen air accumulator, carbon tetrafluoride air accumulator, perfluoroethane air accumulator, perfluoropropane air accumulator, octafluorocyclobutane gas storage
In tank, hexachlorobutadiene air accumulator, octafluoro cyclopentene air accumulator, Nitrogen trifluoride air accumulator and the formed group of argon gas air accumulator
It is one or more kinds of.
6. etching apparatus according to claim 1, it is characterised in that: the isolating valve includes vacuum separation valve.
7. etching apparatus according to claim 1, it is characterised in that: the reaction chamber further includes electrostatic chuck, to inhale
Attached and carrying wafer.
8. etching apparatus according to claim 1, it is characterised in that: the etching apparatus further includes vacuum pump, described true
Sky pump is located at the reaction chamber bottom, for removing the product in the reaction chamber.
9. etching apparatus according to claim 8, it is characterised in that: the product includes that the plasma and reaction produce
Raw polymer.
10. etching apparatus according to claim 8, it is characterised in that: the vacuum pump includes molecular pump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821267825.XU CN208433366U (en) | 2018-08-03 | 2018-08-03 | A kind of etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821267825.XU CN208433366U (en) | 2018-08-03 | 2018-08-03 | A kind of etching apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208433366U true CN208433366U (en) | 2019-01-25 |
Family
ID=65097952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821267825.XU Expired - Fee Related CN208433366U (en) | 2018-08-03 | 2018-08-03 | A kind of etching apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208433366U (en) |
-
2018
- 2018-08-03 CN CN201821267825.XU patent/CN208433366U/en not_active Expired - Fee Related
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Granted publication date: 20190125 |