CN208369480U - A kind of flyback power supply circuit with leakage inductance energy absorbing circuit - Google Patents
A kind of flyback power supply circuit with leakage inductance energy absorbing circuit Download PDFInfo
- Publication number
- CN208369480U CN208369480U CN201821198639.5U CN201821198639U CN208369480U CN 208369480 U CN208369480 U CN 208369480U CN 201821198639 U CN201821198639 U CN 201821198639U CN 208369480 U CN208369480 U CN 208369480U
- Authority
- CN
- China
- Prior art keywords
- capacitor
- diode
- leakage inductance
- resistor
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Dc-Dc Converters (AREA)
Abstract
The utility model discloses a kind of flyback power supply circuits with leakage inductance energy absorbing circuit, including first capacitor, second capacitor, diode, switching tube, transformer and leakage inductance energy absorbing circuit, the leakage inductance energy absorbing circuit includes first resistor, second resistance, height opens MOS device and diode D2, the high grid for opening MOS device is connect with first resistor one end, the high MOS device source electrode of opening is connect with the anode of the diode, the second resistance is connected on high open between MOS device drain electrode and the other end of first resistor, the other end of the first resistor and the cathode of diode are connect with the both ends of the primary coil of transformer respectively, the drain electrode of the other end and switching tube of the second resistance connects, the cathode of described first capacitor one end and second capacitor one end with the diode Connection, route is simple, few using component；The available optimization of EMI；So that the control of switching tube drain voltage is in a certain range in flyback power supply circuit.
Description
Technical field
The utility model belongs to middle low power power circuit field field, and in particular to one kind absorbs electricity with leakage inductance energy
The flyback power supply circuit on road.
Background technique
In Switching Power Supply route, for flyback power supply due at low cost, peripheral cell is few, low power consuming, is suitable for Width funtion
Range input, can multiple groups output the characteristics of.Flyback power supply accounts for major part in middle low power.Almost common consumer production
Product power supply (such as mobile phone, TV) is flyback power supply entirely.As shown in Figure 1, being the RCD absorption part of existing flyback power supply
Line map (ellipse encloses the part come): due to the presence of transformer T1 leakage inductance, flyback converter is in switching tube shutdown moment meeting
Very big peak voltage is generated, so that switching tube bears higher voltage stress, may cause switching tube damage when serious.Cause
This, can generally introduce RCD clamp circuit ensures that flyback converter securely and reliably works.During switching tube is closed, due to
Leakage inductance exists, and A point voltage can be increased quickly, and D1 is opened at this time, is charged by resistance R1, R2 to capacitor C3, B point voltage increases.
With this come leakage inductance energy of releasing.After the completion of leakage inductance energy is released, the energy on capacitor C3 is gradually discharged by R3 releases, B point
Voltage gradually reduces.General this is crossed range request and is completed in one cycle, switching tube it is next open-closing process in weight
It is multiple to protect next time.But RCD clamp circuit is when absorbing leakage inductance energy, while can also absorb one in transformer T1
Divide energy storage, so the selection of RCD clamp circuit parameter needs a large number of experiments debugging matching.Otherwise EMI, efficiency, two poles be will affect
Tube temperature liter, switch protection of pipe.Since the individual differences such as transformer leakage inductance, diode will lead to, even if laboratory test is out of question,
It is also easy to produce in production and is not able to satisfy EMI, efficiency, diode temperature rise, the product for switching protection of pipe.
Utility model content
The purpose of this utility model is to provide a kind of flyback power supply circuit with leakage inductance energy absorbing circuit, lines
Road is simple, few using component；The available optimization of EMI；So that the control of switching tube drain voltage exists in flyback power supply circuit
A certain range.
In order to achieve the above object, the major technique solution of the utility model, which is to provide one kind, absorbs electricity with leakage inductance energy
The flyback power supply circuit on road, including first capacitor, the second capacitor, diode, switching tube, transformer and leakage inductance energy absorb electricity
Road, the leakage inductance energy absorbing circuit include first resistor R1, second resistance R2, it is high open MOS device and diode D2, it is described
The grid that height opens MOS device is connect with the one end first resistor R1, and the high unlatching MOS device source electrode and the diode are just
Pole connection, the second resistance R2 are connected on high MOS device of opening and drain between the other end of first resistor R1, and described first
The other end of resistance R1 and the cathode of diode are connect with the both ends of the primary coil of transformer respectively, the first resistor R1's
The drain electrode of the other end and switching tube connects, and described first capacitor one end and second capacitor one end connect with the cathode of the diode
It connects, with the cathode of the diode together as inverse-excitation type electricity after the first capacitor other end and the connection of the second capacitor other end
The input terminal of source circuit is connected with inductor between the first capacitor other end and the second capacitor other end.
The Standard resistance range of the first resistor R1 is 0~100K Ω.The Standard resistance range of second resistance R2 is 1~1000 Ω
The high voltage for opening MOS device is greater than 60V.
Detailed description of the invention
Fig. 1 is existing flyback power supply circuit diagram,
Fig. 2 is the circuit diagram of an embodiment of the present invention,
In figure, first capacitor C1, the second capacitor C2, first resistor R1, second resistance R2, diode D2, transformer T1, electricity
Feel L1.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art's every other embodiment obtained, all belongs to
In the range of the utility model protection.
It will be understood by those skilled in the art that in the exposure of the utility model, term " longitudinal direction ", " transverse direction ", "upper",
The orientation of the instructions such as "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside" or position are closed
System is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of describing the present invention and simplifying the description, without
It is that the device of indication or suggestion meaning or element must have a particular orientation, be constructed and operated in a specific orientation, therefore on
Stating term should not be understood as limiting the present invention.
It is understood that term " one " is interpreted as " at least one " or " one or more ", i.e., in one embodiment,
The quantity of one element can be one, and in a further embodiment, the quantity of the element can be it is multiple, term " one " is no
It can be interpreted as the limitation to quantity.
As shown in Fig. 2, a kind of flyback power supply circuit with leakage inductance energy absorbing circuit described in the present embodiment, packet
Include first capacitor C1, the second capacitor C2, diode D2, switching tube, transformer T1 and leakage inductance energy absorbing circuit, the leakage inductance energy
Amount absorbing circuit includes first resistor R1, second resistance R2, high unlatching MOS device and diode D2, the high unlatching MOS device
Grid connect with the one end first resistor R1, the high MOS device source electrode of opening is connect with the positive of the diode D2, described
Second resistance R2 is connected on high MOS device of opening and drains between the other end of first resistor R1, and the first resistor R1's is another
The cathode of one end and diode D2 are connect with the both ends of the primary coil of transformer T1 respectively, the other end of the first resistor R1
It is connect with the drain electrode of switching tube, the one end the first capacitor C1 and second one end capacitor C2 connect with the cathode of the diode D2
It connects, with the cathode of the diode D2 together as anti-after the first capacitor C1 other end and the connection of the second capacitor C2 other end
The input terminal of excitation power supply circuit is connected with inductance L1 between the first capacitor C1 other end and the second capacitor C2 other end
Device, the source electrode ground connection of the switching tube, the grid of the switching tube is as IC input terminal.
The Standard resistance range of the first resistor R1 is 0~100K Ω, and the Standard resistance range of second resistance R2 is 1~1000 Ω
The high voltage for opening MOS device is greater than 60V.
Principle is as shown in Figure 2: first resistor R1, second resistance R2 and switching tube are connected by A point, the high MOS that opens passes through B
Point is connect with diode, and diode is connect by C point with transformer, and when switching tube conducting, C point voltage is higher than A point voltage, this
When by diode D2 carry out voltage block.As switching tube is closed, A point voltage gradually rises and more than C point voltage.When AB electricity
When pressure reaches the cut-in voltage of Q1MOS, Q1MOS is opened, and transformer T1 leakage inductance energy is released by R2, Q1MOS, D2.Q1MOS switch
Speed ratio is very fast, it can be understood as high-speed switch, by using the MOS device that height is opened, and the problem of EMI can be improved energetically,
Route design simultaneously is simple, and can reach ideal efficiency and switch protection of pipe.The value of wherein R1, R2 are wider, especially R1,
It can be from 0~100K Ω.
Mos capacitance --- it is better understood on metal-oxide-semiconductor.There are two electrodes for this device, and one is metal, the other is
Extrinsic silicon (external silicon) is separated by a thin layer silica between them.Metal pole is exactly GATE, and half
Conductor end is exactly backgate or body.Insulating oxide between them is known as gate dielectric (gate medium), will
Insulating oxide gate dielectric (gate medium) thickeies, and the mos that voltage is 2-5V can be become the height that voltage is greater than 100V
Mos is opened, it is the prior art which, which is domain knowledge known to same domain personnel,.
The utility model is not limited to above-mentioned preferred forms, anyone can obtain under the enlightenment of the utility model
Other various forms of products, however, make any variation in its shape or structure, it is all that there is same as the present application or phase
Approximate technical solution, all falls within the protection scope of the utility model.
Claims (3)
1. a kind of flyback power supply circuit with leakage inductance energy absorbing circuit, including first capacitor C1, the second capacitor C2, two poles
Pipe D2, switching tube, transformer T1 and leakage inductance energy absorbing circuit, which is characterized in that the leakage inductance energy absorbing circuit includes the
One resistance R1, second resistance R2, high unlatching MOS device and diode D2, the high grid and first resistor for opening MOS device
The connection of the one end R1, the high MOS device source electrode of opening are connect with the anode of the diode D2, and the second resistance R2 is connected on
Height is opened between MOS device drain electrode and the other end of first resistor R1, the other end of the first resistor R1 and diode D2's
Cathode is connect with the both ends of the primary coil of transformer T1 respectively, and the drain electrode of the other end and switching tube of the first resistor R1 connects
It connects, the one end the first capacitor C1 and second one end capacitor C2 are connect with the cathode of the diode D2, the first capacitor
With the cathode of the diode D2 together as flyback power supply circuit after the C1 other end and the connection of the second capacitor C2 other end
Input terminal is connected with inductance L1 device between the first capacitor C1 other end and the second capacitor C2 other end, the switching tube
Source electrode ground connection, the grid of the switching tube is as IC input terminal.
2. the flyback power supply circuit according to claim 1 with leakage inductance energy absorbing circuit, it is characterised in that described
The Standard resistance range of first resistor R1 is 0~100K Ω, and the Standard resistance range of second resistance R2 is 1~1000 Ω.
3. the flyback power supply circuit according to claim 1 with leakage inductance energy absorbing circuit, it is characterised in that described
The voltage that height opens MOS device is greater than 60V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821198639.5U CN208369480U (en) | 2018-07-26 | 2018-07-26 | A kind of flyback power supply circuit with leakage inductance energy absorbing circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821198639.5U CN208369480U (en) | 2018-07-26 | 2018-07-26 | A kind of flyback power supply circuit with leakage inductance energy absorbing circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208369480U true CN208369480U (en) | 2019-01-11 |
Family
ID=64924270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821198639.5U Active CN208369480U (en) | 2018-07-26 | 2018-07-26 | A kind of flyback power supply circuit with leakage inductance energy absorbing circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208369480U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108809108A (en) * | 2018-07-26 | 2018-11-13 | 无锡光磊电子科技有限公司 | A kind of flyback power supply circuit with leakage inductance energy absorbing circuit |
-
2018
- 2018-07-26 CN CN201821198639.5U patent/CN208369480U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108809108A (en) * | 2018-07-26 | 2018-11-13 | 无锡光磊电子科技有限公司 | A kind of flyback power supply circuit with leakage inductance energy absorbing circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103633820B (en) | IGBT (insulated gate bipolar transistor) parallel current sharing circuit | |
| CN104079189A (en) | Charging source for high-voltage capacitor | |
| CN102291002B (en) | Control method of phase-shifted full-bridge circuit | |
| CN109004837A (en) | High voltage flyback converter | |
| CN205283106U (en) | High frequency and high voltage generator and power modular dirve ware thereof | |
| CN103095114A (en) | Lossless buffer circuit suitable for Boost converter | |
| CN208369480U (en) | A kind of flyback power supply circuit with leakage inductance energy absorbing circuit | |
| CN102005920B (en) | Three-level buck type conversion circuit and method | |
| CN208424215U (en) | High voltage flyback converter | |
| EP2860863B1 (en) | Surge protection circuit | |
| CN104836274B (en) | Wide-voltage range high efficiency high-frequency isolation battery charge-discharge circuit and its control method | |
| CN203590008U (en) | Transformer isolation symmetry complementation drive circuit | |
| CN108809108A (en) | A kind of flyback power supply circuit with leakage inductance energy absorbing circuit | |
| CN205596011U (en) | Peak snubber circuit and switching power supply | |
| CN209642543U (en) | A kind of low side active clamp circuit of Switching Power Supply | |
| CN102570787A (en) | Unloading circuit module for auxiliary power supply of photovoltaic inverter system | |
| CN104617780A (en) | Secondary active clamping circuit and forward converter | |
| CN113381612B (en) | Series coupling converter | |
| CN202197218U (en) | Phase-shifting full-bridge circuit | |
| CN101018007A (en) | A high-power factor DC power | |
| CN208369464U (en) | A kind of circuit inhibiting photovoltaic inverter leakage current | |
| CN106712551A (en) | Synchronous rectifier switch, synchronous rectifier chip and synchronous rectifier circuit | |
| CN103138315B (en) | Switch circuit | |
| CN110138192A (en) | A kind of low side active clamp circuit of Switching Power Supply and its control method | |
| CN203800910U (en) | Thyristor valve body |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |