CN108809108A - A kind of flyback power supply circuit with leakage inductance energy absorbing circuit - Google Patents
A kind of flyback power supply circuit with leakage inductance energy absorbing circuit Download PDFInfo
- Publication number
- CN108809108A CN108809108A CN201810835507.7A CN201810835507A CN108809108A CN 108809108 A CN108809108 A CN 108809108A CN 201810835507 A CN201810835507 A CN 201810835507A CN 108809108 A CN108809108 A CN 108809108A
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- CN
- China
- Prior art keywords
- capacitance
- diode
- leakage inductance
- resistor
- energy absorbing
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
Abstract
The invention discloses a kind of flyback power supply circuits with leakage inductance energy absorbing circuit,Including the first capacitance,Second capacitance,Diode,Switching tube,Transformer and leakage inductance energy absorbing circuit,The leakage inductance energy absorbing circuit includes first resistor,Second resistance,Height opens MOS device and diode D2,The high grid for opening MOS device is connect with first resistor one end,The high MOS device source electrode of opening is connect with the anode of the diode,The second resistance is connected on high open between MOS device drain electrode and the other end of first resistor,The other end of the first resistor and the cathode of diode are connect with the both ends of the primary coil of transformer respectively,The drain electrode of the other end and switching tube of the second resistance connects,First capacitance one end and second capacitance one end are connect with the cathode of the diode,Circuit is simple,It is few using component；EMI can be optimized；So that the control of switching tube drain voltage is in a certain range in flyback power supply circuit.
Description
Technical field
The invention belongs to middle low power power circuit FIELD OF THE INVENTIONThes, and in particular to a kind of with leakage inductance energy absorbing circuit
Flyback power supply circuit.
Background technology
In Switching Power Supply circuit, for flyback power supply due at low cost, peripheral cell is few, low power consuming, is suitable for Width funtion
Range input, can multigroup output the characteristics of.Flyback power supply accounts for major part in middle low power.Almost common consumer production
Product power supply (such as mobile phone, TV) is flyback power supply entirely.As shown in Figure 1, being the RCD absorptions part of existing flyback power supply
Line map (ellipse encloses the part come)：Due to the presence of transformer T1 leakage inductances, flyback converter is in switching tube shutdown moment meeting
Generate prodigious peak voltage so that switching tube bears higher voltage stress, switching tube may be caused to damage when serious.Cause
This, can generally introduce RCD clamp circuits ensures that flyback converter securely and reliably works.During switching tube is closed, due to
Leakage inductance exists, and A point voltages can be increased quickly, and D1 is opened at this time, is charged to capacitance C3 by resistance R1, R2, B point voltages increase.
With this come leakage inductance energy of releasing.After the completion of leakage inductance energy is released, the energy on capacitance C3 is gradually discharged by R3 releases, B points
Voltage gradually reduces.General this is crossed range request and is completed in one cycle, switching tube it is next open-closing process in weight
It is multiple to protect next time.But RCD clamp circuits are when absorbing leakage inductance energy, while can also absorb one in transformer T1
Divide energy storage, so the selection of RCD clamp circuit parameters needs a large number of experiments debugging matching.Otherwise EMI, efficiency, two poles can be influenced
Tube temperature liter, switch protection of pipe.Since the individual differences such as transformer leakage inductance, diode can cause, even if laboratory test is out of question,
EMI, efficiency, diode Wen Sheng, the product for switching protection of pipe cannot be met by also being easy tod produce in production.
Invention content
The object of the present invention is to provide a kind of flyback power supply circuit with leakage inductance energy absorbing circuit, circuit letters
It is single, it is few using component；EMI can be optimized；So that the control of switching tube drain voltage is certain in flyback power supply circuit
Range.
In order to achieve the above object, the major technique solution of the present invention be to provide it is a kind of with leakage inductance energy absorbing circuit
Flyback power supply circuit, including the first capacitance, the second capacitance, diode, switching tube, transformer and leakage inductance energy absorbing circuit,
The leakage inductance energy absorbing circuit includes first resistor R1, second resistance R2, high unlatching MOS device and diode D2, the height
The grid for opening MOS device is connect with the one end first resistor R1, the high anode for opening MOS device source electrode and the diode
Connection, the second resistance R2 are connected on high MOS device of opening and drain between the other end of first resistor R1, first electricity
The cathode of the other end and diode that hinder R1 is connect with the both ends of the primary coil of transformer respectively, and the first resistor R1's is another
The drain electrode of one end and switching tube connects, and first capacitance one end and second capacitance one end connect with the cathode of the diode
It connects, with the cathode of the diode together as inverse-excitation type electricity after the first capacitance other end and the connection of the second capacitance other end
The input terminal of source circuit is connected with inductor between the first capacitance other end and the second capacitance other end.
The Standard resistance range of the first resistor R1 is 0~100K Ω.The Standard resistance range of second resistance R2 is 1~1000 Ω
The high voltage for opening MOS device is more than 60V.
Description of the drawings
Fig. 1 is existing flyback power supply circuit diagram,
Fig. 2 is the circuit diagram of one embodiment of the invention,
In figure, the first capacitance C1, the second capacitance C2, first resistor R1, second resistance R2, diode D2, transformer T1, electricity
Feel L1.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, the every other embodiment that those of ordinary skill in the art are obtained belong to what the present invention protected
Range.
It will be understood by those skilled in the art that the present invention exposure in, term " longitudinal direction ", " transverse direction ", "upper",
The orientation of the instructions such as "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside" or position are closed
System is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of description of the present invention and simplification of the description, without referring to
Show or imply that signified device or element must have a particular orientation, with specific azimuth configuration and operation, therefore above-mentioned art
Language is not considered as limiting the invention.
It is understood that term " one " is interpreted as " at least one " or " one or more ", i.e., in one embodiment,
The quantity of one element can be one, and in a further embodiment, the quantity of the element can be multiple, and term " one " is no
It can be interpreted as the limitation to quantity.
As shown in Fig. 2, a kind of flyback power supply circuit with leakage inductance energy absorbing circuit described in the present embodiment, packet
Include the first capacitance C1, the second capacitance C2, diode D2, switching tube, transformer T1 and leakage inductance energy absorbing circuit, the leakage inductance energy
Amount absorbing circuit includes first resistor R1, second resistance R2, high unlatching MOS device and diode D2, the high unlatching MOS device
Grid connect with the one end first resistor R1, the high MOS device source electrode of opening is connect with the positive of the diode D2, described
Second resistance R2 is connected on high MOS device of opening and drains between the other end of first resistor R1, and the first resistor R1's is another
The cathode of one end and diode D2 are connect with the both ends of the primary coil of transformer T1 respectively, the other end of the first resistor R1
It is connect with the drain electrode of switching tube, described one end first capacitance C1 and second one end capacitance C2 connect with the cathode of the diode D2
It connects, with the cathode of the diode D2 together as anti-after the first capacitance C1 other ends and the connection of the second capacitance C2 other ends
The input terminal of excitation power supply circuit is connected with inductance L1 between the first capacitance C1 other ends and the second capacitance C2 other ends
Device, the source electrode ground connection of the switching tube, the grid of the switching tube is as IC input terminals.
The Standard resistance range of the first resistor R1 is 0~100K Ω, and the Standard resistance range of second resistance R2 is 1~1000 Ω
The high voltage for opening MOS device is more than 60V.
Principle is as shown in Figure 2:First resistor R1, second resistance R2 and switching tube are connected by A points, the high MOS that opens passes through B
Point is connect with diode, and diode is connect by C points with transformer, and when switching tube is connected, C point voltages are higher than A point voltages, this
When pass through diode D2 and carry out voltage block.As switching tube is closed, A point voltages gradually rise and more than C point voltages.When AB electricity
When pressure reaches the cut-in voltage of Q1MOS, Q1MOS is opened, and transformer T1 leakage inductance energies are released by R2, Q1MOS, D2.Q1MOS is switched
Speed ratio is very fast, it can be understood as high-speed switch, by using the MOS device that height is opened, and the problem of EMI can be improved energetically,
Circuit design simultaneously is simple, and can reach ideal efficiency and switch protection of pipe.The value of wherein R1, R2 are wider, especially R1,
It can be from 0~100K Ω.
Mos capacitance --- it is better understood on metal-oxide-semiconductor.There are two electrodes for this device, and one is metal, the other is
Extrinsic silicon (external silicon) are separated by a thin layer silica between them.Metal pole is exactly GATE, and half
Conductor end is exactly backgate or body.Insulating oxide between them is known as gate dielectric (gate medium), will
Insulating oxide gate dielectric (gate medium) thicken, and can the mos that voltage is 2-5V be become the height that voltage is more than 100V
Mos is opened, which is domain knowledge known to same domain personnel, is the prior art.
The present invention is not limited to above-mentioned preferred forms, anyone can show that other are various under the inspiration of the present invention
The product of form, however, make any variation in its shape or structure, it is every that there is skill identical or similar to the present application
Art scheme, is within the scope of the present invention.
Claims (3)
1. a kind of flyback power supply circuit with leakage inductance energy absorbing circuit, including the first capacitance C1, the second capacitance C2, two poles
Pipe D2, switching tube, transformer T1 and leakage inductance energy absorbing circuit, which is characterized in that the leakage inductance energy absorbing circuit includes the
One resistance R1, second resistance R2, high unlatching MOS device and diode D2, the high grid and first resistor for opening MOS device
The one end R1 connects, and the high MOS device source electrode of opening is connect with the anode of the diode D2, and the second resistance R2 is connected on
Height is opened between MOS device drain electrode and the other end of first resistor R1, the other end of the first resistor R1 and diode D2's
Cathode is connect with the both ends of the primary coil of transformer T1 respectively, and the drain electrode of the other end and switching tube of the first resistor R1 connects
It connects, described one end first capacitance C1 and second one end capacitance C2 are connect with the cathode of the diode D2, first capacitance
With the cathode of the diode D2 together as flyback power supply circuit after the C1 other ends and the connection of the second capacitance C2 other ends
Input terminal is connected with inductance L1 devices between the first capacitance C1 other ends and the second capacitance C2 other ends, the switching tube
Source electrode is grounded, and the grid of the switching tube is as IC input terminals.
2. the flyback power supply circuit according to claim 1 with leakage inductance energy absorbing circuit, it is characterised in that described
The Standard resistance range of first resistor R1 is 0~100K Ω, and the Standard resistance range of second resistance R2 is 1~1000 Ω.
3. the flyback power supply circuit according to claim 1 with leakage inductance energy absorbing circuit, it is characterised in that described
The voltage that height opens MOS device is more than 60V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810835507.7A CN108809108A (en) | 2018-07-26 | 2018-07-26 | A kind of flyback power supply circuit with leakage inductance energy absorbing circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810835507.7A CN108809108A (en) | 2018-07-26 | 2018-07-26 | A kind of flyback power supply circuit with leakage inductance energy absorbing circuit |
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| Publication Number | Publication Date |
|---|---|
| CN108809108A true CN108809108A (en) | 2018-11-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810835507.7A Pending CN108809108A (en) | 2018-07-26 | 2018-07-26 | A kind of flyback power supply circuit with leakage inductance energy absorbing circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111786562A (en) * | 2020-07-10 | 2020-10-16 | 谭清林 | Leakage inductance energy absorption and feedback method for transformer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201051716Y (en) * | 2007-06-07 | 2008-04-23 | 建德市正达电器有限公司 | An integrated electrode peak voltage absorption and voltage clamp circuit |
| US20090045790A1 (en) * | 2007-08-13 | 2009-02-19 | Samsung Electronics Co., Ltd. | Switching mode power supply apparatus having passive clamp circuit |
| CN103001478A (en) * | 2011-09-13 | 2013-03-27 | 全汉企业股份有限公司 | Method for using bipolar junction transistor in buffer circuit and buffer circuit |
| CN208369480U (en) * | 2018-07-26 | 2019-01-11 | 无锡光磊电子科技有限公司 | A kind of flyback power supply circuit with leakage inductance energy absorbing circuit |
-
2018
- 2018-07-26 CN CN201810835507.7A patent/CN108809108A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201051716Y (en) * | 2007-06-07 | 2008-04-23 | 建德市正达电器有限公司 | An integrated electrode peak voltage absorption and voltage clamp circuit |
| US20090045790A1 (en) * | 2007-08-13 | 2009-02-19 | Samsung Electronics Co., Ltd. | Switching mode power supply apparatus having passive clamp circuit |
| CN103001478A (en) * | 2011-09-13 | 2013-03-27 | 全汉企业股份有限公司 | Method for using bipolar junction transistor in buffer circuit and buffer circuit |
| CN208369480U (en) * | 2018-07-26 | 2019-01-11 | 无锡光磊电子科技有限公司 | A kind of flyback power supply circuit with leakage inductance energy absorbing circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111786562A (en) * | 2020-07-10 | 2020-10-16 | 谭清林 | Leakage inductance energy absorption and feedback method for transformer |
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