CN208350207U - A kind of low-power consumption flow-limiting voltage-stabilizing protection circuit of intensity of illumination detection module - Google Patents
A kind of low-power consumption flow-limiting voltage-stabilizing protection circuit of intensity of illumination detection module Download PDFInfo
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- CN208350207U CN208350207U CN201821131662.2U CN201821131662U CN208350207U CN 208350207 U CN208350207 U CN 208350207U CN 201821131662 U CN201821131662 U CN 201821131662U CN 208350207 U CN208350207 U CN 208350207U
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Abstract
The utility model discloses a kind of low-power consumption flow-limiting voltage-stabilizings of intensity of illumination detection module to protect circuit; including phototriode, operational amplifier, metal-oxide-semiconductor, resistance R1 and current mirror; tandem photosensitive resistance between the emitter of the phototriode and the source electrode of metal-oxide-semiconductor; the drain electrode of opamp input terminal anode connection metal-oxide-semiconductor; opamp input terminal cathode connects the grid of metal-oxide-semiconductor with output end; the collector of phototriode and the emitter ground connection of metal-oxide-semiconductor, current mirror are used to provide power supply to protection circuit.The compatibility of light-sensitive device is strong, and under the premise of designing Photoelectric Signal Processing threshold value, the general light-operated circuit of photosensitive capacitor and photo resistance may be implemented, meanwhile, phototriode can directly use machine patch, greatly reduce cost of labor.
Description
Technical field
The utility model relates to a kind of low-power consumption of flow-limiting voltage-stabilizing circuit field more particularly to intensity of illumination detection module limits
Flow protective circuit of voltage regulation.
Background technique
Currently, there are mainly three types of modes for light-operated circuit: photo resistance detection mode, phototriode detection mode, intelligence
Light-operated switch mode.
Light-operated switch mode is to melt light control functionality and common time control using advanced embedded computer control technology
The multi-function high grade time controller that the big function of device two is integrated needs to open light-operated probe simultaneously with time control function according to energy conservation
With reaching optimum energy-saving effect.For the maximum energy-saving control device of the equipment such as street lamp, Landscape Lamp, advertising lamp box, neon light.But
Small product size is larger can not to be suitable for system on chip, need matching embedded type microcomputer, use, maintenance and production cost
It is all high, it is unable to satisfy the market demand of the low precision low cost light-operated circuit of high-volume.
Photo resistance detection mode is the photoelectric characteristic realization photoelectric converting function using photo resistance, then by chip interior
The electrical signal of photo resistance transmitting is handled, thus realize light controlling effects, its working principle is that: when ambient light dies down
The resistance value of Shi Yinqi photo resistance RG increases, and increase the partial pressure on loading capacitance C, and then increase the silicon-controlled angle of flow；
Conversely, the resistance value of RG reduces if the light of surrounding brightens, decline the partial pressure on loading capacitance C, subsequent conditioning circuit passes through to light
Quick resistance both end voltage is handled to judge that extraneous intensity of illumination realizes the function of light-operated switch.This method structure is simple,
But the producer and model due to photo resistance can have an impact the photoelectric characteristic of resistance, and the model of different photo resistance may be led
Cause chip interior threshold value uncertainty, lead to light-operated failure, can not accomplish the photo resistance for being compatible with other models on a large scale and
Sensitivity is lower；In addition, photo resistance needs manual patch during patch, consumption cost of labor is time-consuming and laborious.
Phototriode detection mode is close with photo resistance, realizes that photoelectricity turns by the photoelectric characteristic of phototriode
It changes, then is handled by electrical signal of the chip interior to transmitting, difference is that phototriode belongs to fluidic devices, and general
Logical audion is similar, has an amplification to electric current, while there are one photosensitive PN junctions as photosurface, when having
When the PN junction of light sensitive characteristic is by light radiation, photoelectric current is formed, resulting photogenerated current enters emitter by base stage, thus
It obtains one in collector loop and is exaggerated to be equivalent to β times of signal code.Phototriode made of different materials has
Different spectral characteristics has very big photoelectric current amplification effect, i.e., very high light sensation sensitivity compared with photodiode.
Compared with photo resistance, phototriode has higher sensitivity, and the consistency of product also preferably and supports machine patch, pole
Big saves cost of labor, and the power consumption of fluidic devices is larger, although bipolar technique can agree with extraneous phototriode
Electrology characteristic, but product power consumption is very big, cannot achieve the production of low-power consumption product, and can not be compatible with photo resistance；Due to photosensitive
Electric current of the triode under intense light conditions is too big for CMOS technology device, so that major part uses photo resistance on the market
Product can not all be compatible with phototriode, so that the application range of phototriode is greatly limited.
Utility model content
In order to solve the above technical problems, the utility model provides a kind of low-power consumption flow-limiting voltage-stabilizing of intensity of illumination detection module
Circuit is protected, with the compatible photo resistance of extremely low cost and photosensitive triode under the conditions of the low-power consumption of CMOS technology.
To achieve the above object, the technical solution of the utility model is as follows:
A kind of low-power consumption flow-limiting voltage-stabilizing protection circuit of intensity of illumination detection module, including phototriode, operation amplifier
Device, MOS pipe, resistance R1 and current mirror, tandem photosensitive resistance between the emitter of the phototriode and the source electrode of metal-oxide-semiconductor,
Opamp input terminal anode connects the drain electrode of metal-oxide-semiconductor and output voltage, and opamp input terminal cathode and output end connect
The grid of metal-oxide-semiconductor, the collector of phototriode and the emitter ground connection of metal-oxide-semiconductor are connect, current mirror is used to provide to protection circuit
Power supply.
In above scheme, the operational amplifier is by the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor,
Five metal-oxide-semiconductors, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor, resistance R2, resistance R3 and capacitor C1 composition, the first MOS
The source level ground connection of pipe, the second metal-oxide-semiconductor and third metal-oxide-semiconductor, the grid connection the of the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 3rd MOS pipe
The drain electrode of one metal-oxide-semiconductor, one end of the drain electrode connection resistance R2 of the first metal-oxide-semiconductor, the other end of resistance R2 connect the source of the 6th metal-oxide-semiconductor
Grade, the drain electrode of drain electrode the 4th metal-oxide-semiconductor of connection of the 6th metal-oxide-semiconductor, the source level of the 4th metal-oxide-semiconductor are separately connected the drain electrode of the second metal-oxide-semiconductor
With the source level of the 5th metal-oxide-semiconductor, the drain electrode of the grid connection third metal-oxide-semiconductor of the 4th metal-oxide-semiconductor, the drain electrode connection the 7th of the 5th metal-oxide-semiconductor
The grid of the drain electrode of metal-oxide-semiconductor, grid and the 6th MOS pipe that the grid of the 6th metal-oxide-semiconductor connects the 7th metal-oxide-semiconductor connects the 7th metal-oxide-semiconductor
Drain electrode, the drain electrode of the 7th metal-oxide-semiconductor is separately connected the grid of the 8th metal-oxide-semiconductor and one end of resistance R3, and the other end of resistance R3 connects
One end of capacitor C1 is connect, the other end of capacitor C1, the drain electrode of the 8th metal-oxide-semiconductor and the drain electrode of third metal-oxide-semiconductor connect metal-oxide-semiconductor jointly
Grid, the source level of the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor and the 8th metal-oxide-semiconductor connects the source electrode of metal-oxide-semiconductor, the grid of the 5th metal-oxide-semiconductor jointly
The drain electrode of pole connection metal-oxide-semiconductor.
In above scheme, first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor and the 5th metal-oxide-semiconductor are P
Channel MOS tube, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor and the 8th metal-oxide-semiconductor are N-channel MOS pipe.
Compared with prior art the utility model has the following beneficial effects:
1, low in cost, compact, whole circuits only need chip module to provide current mirror, and an operational amplifier is
It can；
2, the compatibility of light-sensitive device is strong, and under the premise of designing Photoelectric Signal Processing threshold value, photosensitive electricity may be implemented
Hold the general light-operated circuit with photo resistance；
3, phototriode can directly use machine patch, greatly reduce cost of labor.
Detailed description of the invention
Fig. 1 is the overall structure block diagram of the utility model；
Fig. 2 is the circuit diagram of the utility model；
Fig. 3 is phototriode volt-ampere characteristics of figure in the utility model；
Fig. 4 is phototriode light characteristics figure in the utility model.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiment of the present utility model is described in further detail.Below
Embodiment is not intended to limit the scope of the present invention for illustrating the utility model.
A kind of low-power consumption flow-limiting voltage-stabilizing protection circuit of intensity of illumination detection module, as depicted in figs. 1 and 2, including is used for
Intensity of illumination signal is converted into the phototriode of electrical signal, the operational amplifier for being used to limit current mirror output, MOS
Pipe, resistance R1 and for light-sensitive device provide electric current current mirror, between the emitter of phototriode and the source electrode of metal-oxide-semiconductor
Tandem photosensitive resistance, opamp input terminal cathode connect the grid of metal-oxide-semiconductor, opamp input terminal anode with output end
Connect the drain electrode of MOS pipe and output voltage, the collector of phototriode and the source electrode ground connection of metal-oxide-semiconductor.Pass through specified output electricity
The threshold range of pressure, the electric current that limitation current mirror externally provides protect chip interior to limit the voltage consumed on current mirror
The high current that power supply is not generated by device outside chip is taken out film and is rung, and reduces power consumption, the voltage of output by voltage analysis module into
One step analysis processing.
Wherein, operational amplifier is by the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor,
Six metal-oxide-semiconductors, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor, resistance R2, resistance R3 and capacitor C1 composition, wherein the first MOS pipe, the 2nd MOS
Pipe, third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor and the 5th metal-oxide-semiconductor are P-channel metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor and the 8th metal-oxide-semiconductor
For N-channel MOS pipe.The source level of first metal-oxide-semiconductor, the second metal-oxide-semiconductor and third metal-oxide-semiconductor is grounded, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, the
The grid of three metal-oxide-semiconductors connects the drain electrode of the first metal-oxide-semiconductor, and one end of the drain electrode connection resistance R2 of the first metal-oxide-semiconductor, resistance R2's is another
The source level of the 6th metal-oxide-semiconductor of end connection, the drain electrode of drain electrode the 4th MOS pipe of connection of the 6th metal-oxide-semiconductor, the source level difference of the 4th metal-oxide-semiconductor
Connect the second metal-oxide-semiconductor drain electrode and the 5th metal-oxide-semiconductor source level, the 4th metal-oxide-semiconductor grid connection third metal-oxide-semiconductor drain electrode, the 5th
The drain electrode of drain electrode the 7th metal-oxide-semiconductor of connection of metal-oxide-semiconductor, the grid of the 6th metal-oxide-semiconductor connect the grid and the 6th metal-oxide-semiconductor of the 7th metal-oxide-semiconductor
Grid connect the 7th metal-oxide-semiconductor drain electrode, the drain electrode of the 7th metal-oxide-semiconductor be separately connected the 8th metal-oxide-semiconductor grid and resistance R3 one
End, one end of the other end connection capacitor C1 of resistance R3, the other end of capacitor C1, the drain electrode of the 8th metal-oxide-semiconductor and third metal-oxide-semiconductor
The common connection metal-oxide-semiconductor of drain electrode grid, the source level of the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor and the 8th metal-oxide-semiconductor connects metal-oxide-semiconductor jointly
Source electrode, the drain electrode of the grid connection metal-oxide-semiconductor of the 5th metal-oxide-semiconductor.
According to the photoelectric characteristic of phototriode, in the lower situation of intensity of illumination, branch where phototriode
Electric current is smaller, after resistance R1, current signal is converted corresponding voltage signal and is supplied to rear stage output voltage analysis module,
Output voltage is lower at this time.
It is shown according to the volt-ampere characteristics of figure of Fig. 3 phototriode, when intensity of illumination increases, the electric current of phototriode will
Can increased dramatically increases output voltage, when voltage increases to a certain extent, is controlled by the feedback effect of operational amplifier
The grid voltage of current mirror metal-oxide-semiconductor, the grid voltage of elevated currents mirror metal-oxide-semiconductor reduce the Vgs of electric current mirror tube to limit the branch
On electric current；Meanwhile when electric current increases in circuit, the partial pressure of resistance increases in branch, reduces photosensitive three to a certain extent
The Uce bias of pole pipe.
It is shown according to Fig. 4 phototriode light characteristics curve, when intensity of illumination is constant, the bias for reducing Uce can be with
Reduce the electric current consumed on phototriode；Guarantee that the branch exports electric current and electricity by the double action of amplifier and current-limiting resistance
The balance of pressure, as long as setting the detection threshold value of detection voltage, so that it may easily spirit of the control phototriode to intensity of illumination
Sensitivity, while guaranteeing the safety of the current branch.
When not using phototriode, extraneous device is changed to photo resistance, according to the optical characteristics of photo resistance, equally
The voltage of output end can be made to generate variation by the variation of intensity of illumination, only need to adjust the detection threshold of output voltage at this time
Value, so that it may the compatible photo resistance detection of perfection, and the electric current for equally guaranteeing the branch is in the reasonable scope, will not jeopardize chip
It works normally.
Above embodiments are only to illustrate the technical idea of the utility model, and the protection model of the utility model cannot be limited with this
Enclose, it is all according to the utility model proposes technical idea, be made any change, each falls within this reality on the basis of technical solutions
With in novel protected range.
Claims (3)
1. the low-power consumption flow-limiting voltage-stabilizing of intensity of illumination detection module a kind of protects circuit, it is characterised in that: including phototriode,
Operational amplifier, metal-oxide-semiconductor, resistance R1 and current mirror, series electrical between the emitter of the phototriode and the source electrode of metal-oxide-semiconductor
R1 is hindered, opamp input terminal anode connects the drain electrode of metal-oxide-semiconductor and output voltage, opamp input terminal cathode and output
The grid of end connection metal-oxide-semiconductor, the collector of phototriode and the emitter ground connection of metal-oxide-semiconductor, current mirror are used to give protection circuit
Power supply is provided.
2. the low-power consumption flow-limiting voltage-stabilizing of intensity of illumination detection module according to claim 1 protects circuit, it is characterised in that:
The operational amplifier by the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor,
7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor, resistance R2, resistance R3 and capacitor C1 composition, first metal-oxide-semiconductor, the second metal-oxide-semiconductor and third
The source level of metal-oxide-semiconductor is grounded, the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor grid connect the drain electrode of the first metal-oxide-semiconductor, first
One end of the drain electrode connection resistance R2 of metal-oxide-semiconductor, the other end of resistance R2 connect the source level of the 6th metal-oxide-semiconductor, the drain electrode of the 6th metal-oxide-semiconductor
The drain electrode of the 4th metal-oxide-semiconductor is connected, the source level of the 4th metal-oxide-semiconductor is separately connected drain electrode and the source level of the 5th metal-oxide-semiconductor of the second metal-oxide-semiconductor,
The drain electrode of the grid connection third metal-oxide-semiconductor of 4th metal-oxide-semiconductor, the drain electrode of drain electrode the 7th metal-oxide-semiconductor of connection of the 5th metal-oxide-semiconductor, the 6th MOS
The grid of pipe connects the drain electrode of grid the 7th metal-oxide-semiconductor of connection of the grid of the 7th metal-oxide-semiconductor and the 6th metal-oxide-semiconductor, the leakage of the 7th metal-oxide-semiconductor
Pole is separately connected the grid of the 8th metal-oxide-semiconductor and one end of resistance R3, one end of the other end connection capacitor C1 of resistance R3, capacitor C1
The other end, the 8th metal-oxide-semiconductor drain electrode and third metal-oxide-semiconductor the common connection metal-oxide-semiconductor of drain electrode grid, the 6th metal-oxide-semiconductor, the 7th
The source level of metal-oxide-semiconductor and the 8th metal-oxide-semiconductor connects the source electrode of metal-oxide-semiconductor, the drain electrode of the grid connection metal-oxide-semiconductor of the 5th metal-oxide-semiconductor jointly.
3. the low-power consumption flow-limiting voltage-stabilizing of intensity of illumination detection module according to claim 2 protects circuit, it is characterised in that:
First metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor and the 5th metal-oxide-semiconductor be P-channel metal-oxide-semiconductor, the 6th metal-oxide-semiconductor,
7th metal-oxide-semiconductor and the 8th metal-oxide-semiconductor are N-channel MOS pipe.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821131662.2U CN208350207U (en) | 2018-07-17 | 2018-07-17 | A kind of low-power consumption flow-limiting voltage-stabilizing protection circuit of intensity of illumination detection module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821131662.2U CN208350207U (en) | 2018-07-17 | 2018-07-17 | A kind of low-power consumption flow-limiting voltage-stabilizing protection circuit of intensity of illumination detection module |
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| Publication Number | Publication Date |
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| CN208350207U true CN208350207U (en) | 2019-01-08 |
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| CN201821131662.2U Active CN208350207U (en) | 2018-07-17 | 2018-07-17 | A kind of low-power consumption flow-limiting voltage-stabilizing protection circuit of intensity of illumination detection module |
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