CN208298838U - Gallium nitride high mobility transistor - Google Patents
Gallium nitride high mobility transistor Download PDFInfo
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- CN208298838U CN208298838U CN201721513069.XU CN201721513069U CN208298838U CN 208298838 U CN208298838 U CN 208298838U CN 201721513069 U CN201721513069 U CN 201721513069U CN 208298838 U CN208298838 U CN 208298838U
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- gallium nitride
- potsherd
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- high mobility
- mobility transistor
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Abstract
The utility model provides gallium nitride high mobility transistor, wherein being fixed with plastic packaging material shell on the encapsulating lead；The Sapphire Substrate is placed in innermost layer, between nitride buffer layer filling and Sapphire Substrate and gallium nitride, the other side of gallium nitride is aluminum gallium nitride, gallium nitride and aluminum gallium nitride surrounding are fixed with passivation layer, grid, source electrode, drain electrode are fixed in passivation layer, passivation layer is fixed on one, filling adhesive between deposit potsherd and encapsulating lead by adhesive bonding with deposit potsherd；Advantage are as follows: precision is high, the hydrid integrated circuit of completion is small in size, I/O density is high, interconnection line is short, wiring parasitic parameter is small, can reduce the influence to heat dissipation to greatest extent.
Description
Technical field
The utility model relates to field of transistors, more particularly, to gallium nitride high mobility transistor.
Background technique
Process for sapphire-based GaN HEMT(gallium nitride high mobility transistor) be third generation semiconductor devices staple product,
Switching power circuit, inverter circuit etc. are widely used.But sapphire is the non-conductor of heat, this disadvantage leads to blue treasured
The application of ground mass GaN HEMT device is affected.
Summary of the invention
The purpose of this utility model is that solve the deficiencies in the prior art, and gallium nitride high mobility transistor is provided.
The new technical solution of the utility model is: gallium nitride high mobility transistor, including plastic packaging material shell, sapphire lining
Bottom, nitride buffer layer, gallium nitride, aluminum gallium nitride, grid, source electrode, drain electrode, passivation layer, adhesive, deposit potsherd, encapsulation
Lead frame is fixed with plastic packaging material shell on the encapsulating lead；The inside respectively is indigo plant from inside to outside
Jewel substrate, nitride buffer layer, gallium nitride, aluminum gallium nitride, passivation layer, adhesive, deposit potsherd；The sapphire lining
Bottom is placed in innermost layer, and between nitride buffer layer filling and Sapphire Substrate and gallium nitride, the other side of gallium nitride is gallium nitride
Aluminium, gallium nitride and aluminum gallium nitride surrounding are fixed with passivation layer, and grid, source electrode, drain electrode are fixed in passivation layer, passivation layer and deposit
Potsherd is fixed on one, filling adhesive between deposit potsherd and encapsulating lead by adhesive bonding.
The deposit potsherd is rectangular sheet shape, and using potsherd as substrate, wherein two sides are electrode district, and centre is
Heat radiating metal area, potsherd are usually aluminium nitride ceramics；Potsherd upper and lower surface metal-coated membrane, the patterns of two metal films according to
GaN HEMT chip form requires arrangement, and metal is commonly using copper (Cu) or golden (Au) by using metal evaporation or sputtering
Mode is formed.
The deposit potsherd, metal film GaN HEMT chip be it is repeatedly back-shaped, wiring both ends are respectively arranged at ceramics
The diagonal part of piece.
By adhesive bonding between the GaN HEMT chip and deposit potsherd, wherein electrode district and heat radiating metal area
Using different adhesives, electrode district uses the good adhesive of electric conductivity, and heat radiating metal area is good using heating conduction
Adhesive.
Thermally conductive good adhesive is used between the lead frame of the deposit potsherd and encapsulation.
The replacement of other insulating heat-conduction materials such as aluminum base PCB plate can be used in the deposit potsherd.
The Sapphire Substrate group becomes aluminium oxide.
The gallium nitride layer that the nitride buffer layer is a few micrometers.
Its ingredient of the aluminum gallium nitride is configured to AlXGa1-XAt the hetero-junctions surface that N, aluminum gallium nitride and gallium nitride are constituted
Gallium nitride side will form two-dimensional electron gas 2DEG, be conducting channel.
The grid is the Schottky contacts that metal and semiconductor are formed, and metal is nickel gold metal system；Source electrode
(Source) and drain electrode (Drain) is the collector and emitter of HEMT device, and source electrode and drain electrode is all metal and semiconductor shape
At ohmic contact system, be titanium aluminium nickel gold metal system.
The passivation layer is SiN material.
The beneficial effects of the utility model are: precision is high, the hydrid integrated circuit of completion is small in size, I/O density is high, interconnection
Line is short, wiring parasitic parameter is small, can reduce the influence to heat dissipation to greatest extent.
Detailed description of the invention
Fig. 1 is the longitudinal profile schematic diagram of the utility model.
Fig. 2 is the GaN HEMT chip and deposit ceramic chip structure schematic diagram of the utility model.
Wherein: 1 being Sapphire Substrate, 2 be plastic packaging material shell, 3 be nitride buffer layer, 4 be gallium nitride, 5 be gallium nitride
Aluminium, 6 be drain electrode, 7 be adhesive A, 8 be deposit potsherd, 9 be adhesive B, 10 be encapsulating lead, 11 be grid, 12 be
Passivation layer, 13 be source electrode, 14 be electrode district, 15 be terminals, 16 be heat radiating metal area, 17 be GaN HEMT chip.
Specific embodiment
The utility model is described further with reference to the accompanying drawing.
Gallium nitride high mobility transistor, including plastic packaging material shell 2, Sapphire Substrate 1, nitride buffer layer 3, gallium nitride
4, aluminum gallium nitride 5, grid 11, source electrode 13, drain electrode 6, passivation layer 12, adhesive A 7, adhesive B9, deposit potsherd 8, encapsulation are drawn
Wire frame 10 is fixed with plastic packaging material shell 2 on the encapsulating lead 10；The inside respectively is from inside to outside
Sapphire Substrate 1, nitride buffer layer 3, gallium nitride 4, aluminum gallium nitride 5, passivation layer 12, adhesive A 7, deposit potsherd 8；Institute
The Sapphire Substrate 1 stated is placed in innermost layer, between the filling of nitride buffer layer 3 and Sapphire Substrate 1 and gallium nitride 4, gallium nitride 4
The other side be aluminum gallium nitride 5, gallium nitride 4 and 5 surrounding of aluminum gallium nitride are fixed with passivation layer 12, grid 11, source electrode 13, drain electrode 6
Be fixed in passivation layer 12, passivation layer 12 and deposit potsherd 8 are adhesively fixed by adhesive A 7 in one, deposit potsherd 8 with
Filling adhesive B9 between encapsulating lead 10.
The deposit potsherd 8 is rectangular sheet shape, and using potsherd as substrate, wherein two sides are electrode district 14, in
Between be heat radiating metal area 16, potsherd is usually aluminium nitride ceramics；Potsherd upper and lower surface metal-coated membrane, the pattern of two metal films
Arranged according to 17 shape need of GaN HEMT chip, metal commonly using copper (Cu) or golden (Au) by using metal evaporation or
The mode of sputtering is formed.
The deposit potsherd 8, metal film GaN HEMT chip 17 be it is repeatedly back-shaped, wiring both ends 15 are respectively arranged at
The diagonal part of potsherd.
By adhesive bonding, wherein electrode district 14 and heat dissipation between the GaN HEMT chip 17 and deposit potsherd 8
Metal area 16 uses different adhesives, and electrode district 14 uses the good adhesive A 7 of electric conductivity, and heat radiating metal area 16 uses
The good adhesive B9 of heating conduction.
Thermally conductive good adhesive B9 is used between the lead frame 10 of the deposit potsherd 8 and encapsulation.
The replacement of other insulating heat-conduction materials such as aluminum base PCB plate can be used in the deposit potsherd 8.
Described 1 group of Sapphire Substrate becomes aluminium oxide.
The gallium nitride layer that the nitride buffer layer 3 is a few micrometers.
Described its ingredient of aluminum gallium nitride 5 is configured to AlXGa1-XThe hetero-junctions table that N, aluminum gallium nitride 5 and gallium nitride 4 are constituted
4 side of gallium nitride will form two-dimensional electron gas 2DEG at face, be conducting channel.
The grid 11 is the Schottky contacts that metal and semiconductor are formed, and metal is nickel gold metal system；Source electrode
(Source) 13 and drain electrode (Drain) 6 is the collector and emitter of HEMT device, and source electrode 13 and drain electrode 6 are all metal and half
The ohmic contact system that conductor is formed is titanium aluminium nickel gold metal system.
The passivation layer 12 is SiN material.
Claims (11)
1. gallium nitride high mobility transistor, including plastic packaging material shell (2), Sapphire Substrate (1), nitride buffer layer (3), nitrogen
Change gallium (4), aluminum gallium nitride (5), grid (11), source electrode (13), drain electrode (6), passivation layer (12), adhesive A (7), adhesive B
(9), deposit potsherd (8), encapsulating lead (10), it is characterised in that: be fixed on the encapsulating lead (10)
Plastic packaging material shell (2)；Sapphire Substrate (1), nitride buffer layer (3), nitridation are successively arranged in the plastic packaging material shell (2)
Gallium (4), aluminum gallium nitride (5), passivation layer (12), adhesive A (7), deposit potsherd (8), adhesive B(9)；The sapphire
Substrate (1) is placed in innermost layer, between nitride buffer layer (3) filling and Sapphire Substrate (1) and gallium nitride (4), gallium nitride (4)
The other side be aluminum gallium nitride (5), gallium nitride (4) and aluminum gallium nitride (5) surrounding are fixed with passivation layer (12), grid (11), source
Pole (13), drain electrode (6) are fixed in passivation layer (12), and passivation layer (12) and deposit potsherd (8) are bonded admittedly by adhesive A (7)
Due to filling adhesive B(9 between one, deposit potsherd (8) and encapsulating lead (10)).
2. gallium nitride high mobility transistor according to claim 1, it is characterised in that: the deposit potsherd (8)
For rectangular sheet shape, using potsherd as substrate, wherein two sides are electrode district (14), and centre is heat radiating metal area (16), ceramics
Piece is usually aluminium nitride ceramics；Potsherd upper and lower surface metal-coated membrane, the pattern of two metal films is according to GaN HEMT chip (17)
Shape need arrangement, metal is commonly using copper (Cu) or golden (Au) by being formed using the mode of metal evaporation or sputtering.
3. gallium nitride high mobility transistor according to claim 1 or 2, it is characterised in that: the deposit potsherd
(8), metal film GaN HEMT chip (17) is repeatedly back-shaped, and terminals (15) are respectively arranged at the diagonal part of potsherd.
4. gallium nitride high mobility transistor according to claim 2, it is characterised in that: the GaN HEMT chip
(17) by adhesive bonding between deposit potsherd (8), wherein electrode district (14) and heat radiating metal area (16) are used different
Adhesive, electrode district (14) use the good adhesive of electric conductivity, and heat radiating metal area (16) are good viscous using heating conduction
Mixture.
5. gallium nitride high mobility transistor according to claim 1, it is characterised in that: the deposit potsherd (8)
Thermally conductive good adhesive B(9 is used between the lead frame (10) of encapsulation).
6. gallium nitride high mobility transistor according to claim 1, it is characterised in that: the deposit potsherd (8)
The replacement of other insulating heat-conduction materials such as aluminum base PCB plate can be used.
7. gallium nitride high mobility transistor according to claim 1, it is characterised in that: the Sapphire Substrate (1)
Group becomes aluminium oxide.
8. gallium nitride high mobility transistor according to claim 1, it is characterised in that: the nitride buffer layer
(3) gallium nitride layer for being a few micrometers.
9. gallium nitride high mobility transistor according to claim 1, it is characterised in that: the aluminum gallium nitride (5) its
Ingredient is configured to AlXGa1-XGallium nitride (4) side can shape at the hetero-junctions surface of N, aluminum gallium nitride (5) and gallium nitride (4) composition
It is conducting channel at two-dimensional electron gas 2DEG.
10. gallium nitride high mobility transistor according to claim 1, it is characterised in that: the grid (11) is gold
Belong to the Schottky contacts formed with semiconductor, metal is nickel gold metal system；Source electrode (13) and drain electrode (6) are the collection of HEMT device
Electrode and emitter, source electrode (13) and drain electrode (6) are all the ohmic contact systems that metal and semiconductor are formed, and are titanium aluminium nickel gold gold
Category system.
11. gallium nitride high mobility transistor according to claim 1, it is characterised in that: the passivation layer (12) is
SiN material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721513069.XU CN208298838U (en) | 2017-11-14 | 2017-11-14 | Gallium nitride high mobility transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721513069.XU CN208298838U (en) | 2017-11-14 | 2017-11-14 | Gallium nitride high mobility transistor |
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| Publication Number | Publication Date |
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| CN208298838U true CN208298838U (en) | 2018-12-28 |
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| CN201721513069.XU Active CN208298838U (en) | 2017-11-14 | 2017-11-14 | Gallium nitride high mobility transistor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107706239A (en) * | 2017-11-14 | 2018-02-16 | 山东聚芯光电科技有限公司 | Gallium nitride high mobility transistor |
| CN115863425A (en) * | 2023-02-03 | 2023-03-28 | 江苏能华微电子科技发展有限公司 | GaN HEMT device with sapphire substrate and cascode structure |
-
2017
- 2017-11-14 CN CN201721513069.XU patent/CN208298838U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107706239A (en) * | 2017-11-14 | 2018-02-16 | 山东聚芯光电科技有限公司 | Gallium nitride high mobility transistor |
| CN115863425A (en) * | 2023-02-03 | 2023-03-28 | 江苏能华微电子科技发展有限公司 | GaN HEMT device with sapphire substrate and cascode structure |
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