CN208297927U - Exposure focusing compensates equipment - Google Patents
Exposure focusing compensates equipment Download PDFInfo
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- CN208297927U CN208297927U CN201820858120.9U CN201820858120U CN208297927U CN 208297927 U CN208297927 U CN 208297927U CN 201820858120 U CN201820858120 U CN 201820858120U CN 208297927 U CN208297927 U CN 208297927U
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- exposure
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Abstract
The utility model belongs to semiconductor integrated circuit manufacturing technology field, is related to a kind of exposure focusing compensation equipment, including topographical surface measuring device, focusing measuring device and exposure machine；Exposure machine includes exposure base, and the exposing unit being correspondingly arranged up and down with exposure base；Topographical surface measuring device and focusing measuring device are built in the exposure machine；Topographical surface measuring device obtains crystal column surface topographic map for measuring；It focuses measuring device and obtains the focus value and coordinate of each focus measurement point of crystal column surface for measuring；Exposure machine carries out region division to crystal column surface according to the topographical surface figure and establishes the exposure compensating model of each region according to the focus value of each region focus measurement point and coordinate, and exposing unit is exposed processing to each region of crystal column surface according to the exposure compensating model of each region respectively.Equipment provided by the utility model can improve focusing accuracy when exposure machine carries out photoetching process.
Description
Technical field
The utility model belongs to semiconductor integrated circuit manufacturing technology field, is related to a kind of exposure focusing compensation equipment.
Background technique
Integrated circuit is then to pass through metal interconnecting wires by forming semiconductor devices in the range of several microns of silicon chip surface
These devices are connected to form circuit.In semiconductor processing, photoetching, exposure technology occupy very important status.But in light
It carves, the factors such as gas, substrate surface flatness of the rotation of wafer, the temperature of wafer itself, photoresist release make in exposure
Exposure focusing measurement point position in exposure process makes in Different Plane, crystal column surface partial region exposure focusing inaccuracy
Crystal column surface can Partial exposure be insufficient, Partial exposure is excessive, lead to after exposure development the equal of the characteristic size of pattern on wafer
There are problems for one property.
With the development of semiconductor technology, in order to enhance product performance, cost is saved, the density of integrated circuit is increasingly
Greatly, characteristic size is smaller and smaller, and the problem of Focus Exposure will affect the entirety of integrated circuit in photoetching, exposure technology
Performance.
Utility model content
The utility model provides a kind of exposure focusing compensation equipment, can improve focusing when exposure machine carries out photoetching process
Accuracy.
To realize the above-mentioned technical purpose, the technical solution that the utility model is taken is a kind of exposure focusing compensation equipment, packet
It includes topographical surface measuring device, focus measuring device and exposure machine；
The exposure machine includes exposure base, and the exposing unit being correspondingly arranged up and down with exposure base；The exposure
Base is for carrying wafer；The topographical surface measuring device and the focusing measuring device are built in the exposure machine,
And the topographical surface measuring device and the focusing measuring device are connected with the exposure machine；The topographical surface measurement dress
It sets and obtains the topographical surface figure of the wafer for measuring；To obtain the crystal column surface each for measuring for the focusing measuring device
The focus value and coordinate of focus measurement point；The exposure machine carries out region to the crystal column surface according to the topographical surface figure and draws
Divide and establish according to the focus value of each region focus measurement point and coordinate the exposure compensating model of each region, exposing unit root
Processing is exposed respectively to each region of the crystal column surface according to the exposure compensating model of each region.
Preferably, the exposure machine includes stepper.
Preferably, the exposure machine includes scan-type litho machine.
Preferably, the exposure focusing compensation equipment further includes control processor, and the control processor is integrated in described
On exposure machine, the topographical surface measuring device and the focusing measuring device are connected with the control processor；It is described
The topographical surface figure for the wafer that control processor is obtained according to the topographical surface measuring device measurement is to the wafer table
Face carries out region division, and according to region division result and the obtained each focus measurement point of measuring device measurement that focuses
Focus value and coordinate establish the exposure compensating model of each region；The control processor is also connected with the exposing unit,
Each region of the crystal column surface is distinguished with controlling the exposing unit according to the exposure compensating model of each region
It is exposed processing.
Preferably, the control processor includes microcomputer.
Preferably, the topographical surface measuring device includes video camera.
Preferably, the video camera includes industrial camera.
Beneficial effect
The cluster tool topographical surface measuring device of the utility model focuses measuring device and exposure machine, is able to achieve and treats
The different zones of exposed wafer establish different exposure compensating models, to carry out the exposure of different focus values, effectively improve exposure
The accuracy of focusing.
Detailed description of the invention
Fig. 1 shows the positional diagram of focus point of exposure machine and crystal column surface in existing photolithographic exposure technique.
Fig. 2 shows the positional relationship image schematic diagram of focus point of exposure machine and crystal column surface in existing photolithographic exposure technique.
Fig. 3 shows the pattern schematic diagram after existing photolithographic exposure art lithography exposure.
Fig. 4 shows the crystal column surface topographic map measured in the utility model embodiment.
Fig. 5 shows that wafer area divides schematic diagram in the utility model embodiment.
Fig. 6 is shown uniformly chooses several schematic diagrames for focusing measuring point in second area in the utility model embodiment.
Fig. 7 shows that the exposing unit of exposure machine shows with crystal column surface each region covering relation in the utility model embodiment
It is intended to.
Fig. 8 shows that the exposing unit of exposure machine and crystal column surface each region covering relation are detailed in the utility model embodiment
Thin schematic diagram.
Fig. 9 shows the structure diagram of exposure focusing compensation equipment in the utility model embodiment.
In figure: 1, face where the focus point of exposure machine；2, wafer；3, pattern；100, crystal column surface；101, first area；
102, second area；103, third region；104, the fourth region；201, first langley of exposure machine；202, exposure machine
Two langleys；301, the first focus measurement point in second area；302, the second focus measurement point in second area；303,
First focus measurement point in one region；304, the second focus measurement point in first area；305, tertiary focusing is surveyed in first area
Amount point；5, exposure machine；6, exposing unit；7, topographical surface measuring device；8, base is exposed；9, measuring device is focused；10, it controls
Processor.
Specific embodiment
To keep the purpose and technical solution of the utility model embodiment clearer, implement below in conjunction with the utility model
The attached drawing of example, is clearly and completely described the technical solution of the utility model embodiment.Obviously, described embodiment
It is a part of the embodiment of the utility model, instead of all the embodiments.Based on described the embodiments of the present invention,
Those of ordinary skill in the art's every other embodiment obtained under the premise of being not necessarily to creative work belongs to practical
Novel protected range.
As shown in Figures 1 and 2, when carrying out photolithographic exposure processing to crystal column surface 100 in the prior art, burnt focus point is exposed
Always in the same plane, and during photolithographic exposure, crystal column surface 100 various factors (temperature difference, flatness or
Photoresist release gas) etc. influence, crystal column surface 100 have difference in height so that exposure machine 5 focus point where face 1 with
The surface of wafer 2 is not overlapped, so that the pattern 3 after photolithographic exposure is uneven, it is specific as shown in Figure 3.
Equipment provided by the present application can treat exposure using focus-compensating model in the case where not changing crystal column surface 100
The different zones of light wafer 2 carry out differentiation compensation, to improve the accuracy of exposure focusing；The equipment includes topographical surface measurement
Device 7 focuses measuring device 9 and exposure machine 5, measures 100 topographic map of crystal column surface, exposure by topographical surface measuring device 7
It is different height variation tendency region that machine 5, which divides wafer 2 according to surface height difference, focuses measuring device 9 respectively to not same district
Domain is focused measurement, and exposure machine 5 measures obtained result according to topographical surface measuring device 7 and focusing measuring device 9 and establishes
Different compensation models are fed back in advance by compensation model, and then improve exposure focusing stability.
As shown in figure 9, a kind of exposure focusing compensates equipment, including topographical surface measuring device 7, focus measuring device 9 with
Exposure machine 5；
The exposure machine 5 includes exposure base 8, and the exposing unit 6 being correspondingly arranged with about 8 base of exposure；It is described
Exposure base 8 is for carrying wafer 2；The topographical surface measuring device 7 obtains the topographical surface of the wafer 2 for measuring
Figure, the topographical surface measuring device 7 include video camera, and the video camera includes industrial camera；Outwardly according to wafer 2
The surface of the wafer 2 is divided first area 101, second area 102 and until the area N by height change trend by shape figure
Domain, N are and to guarantee that the height of crystal column surface 100 in each region is located at height set by each region greater than 2 positive integers
In section；The height of the second area 102 can be greater than the height of the first area 101, and the height in third region can be with
Greater than the height of the second area 102, and so on, the n-quadrant can have maximum height, and each region point
It Ju You not an exposure focusing value.
The focusing measuring device 9 obtains the focus value and seat of each focus measurement point of the crystal column surface 100 for measuring
Mark；Obtain the coordinate value and focus value of 2 surface each region of wafer.
The topographical surface measuring device 7 and the focusing measuring device 9 are built in the exposure machine 5, and described
Topographical surface measuring device 7 and the focusing measuring device 9 are connected with the exposure machine 5；The exposure machine 5 is according to the table
Face topographic map carries out region division to the crystal column surface 100 and is built according to the focus value and coordinate of each region focus measurement point
The exposure compensating model of vertical each region, exposing unit 6 is according to the exposure compensating model of each region to the wafer table
The each region in face 100 is exposed processing respectively.
In the present embodiment, the exposure machine 5 includes stepper or scan-type litho machine.
Preferably, above-mentioned exposure focusing compensation equipment further includes control processor 10, and the control processor 10 is integrated in
On the exposure machine 5, the topographical surface measuring device 7 and the focusing measuring device 9 with 10 phase of control processor
Connection；The topographical surface figure for the wafer 2 that the control processor 10 is obtained according to the topographical surface measuring device 7 measurement
Region division is carried out to the crystal column surface 100, and is obtained according to region division result and the focusing measuring device 9 measurement
Each focus measurement point focus value and coordinate establish the exposure compensating model of each region；The control processor 10 also with institute
It states exposing unit 6 to be connected, to control the exposing unit 6 according to the exposure compensating model of each region to the wafer
The each region on surface 100 is exposed processing respectively.
Preferably, the control processor 10 includes microcomputer.
When practical application, first, wafer 2 is provided, the wafer 2 has the topographical surface of different height, and topographical surface is surveyed
The topographical surface that device 7 obtains wafer 2 is measured, specifically 2 topographical surface of wafer can be shot using video camera, as shown in Figure 4.
Then, the crystal column surface is divided after such as topographical surface of microcomputer acquisition wafer 2 of control processor 10
100, the topographical surface figure of the wafer 2 is measured, as shown in figure 5, centered on the center of circle of the wafer 2, according to the wafer
The height distribution trend on surface 100, by the crystal column surface 100 be divided into first area 101, second area 102 and until
N-quadrant, N is the positive integer greater than 2, and guarantees that the height of the crystal column surface 100 in each region is located at each region
In set height section；Here the crystal column surface 100 can be divided into described first in such a way that annular divides
Region 101, the second area 102 and until the n-quadrant；It can also be by the way of irregular figure division by institute
It states crystal column surface 100 and is divided into the first area 101, the second area 102 and until the n-quadrant.
Then, such as microcomputer of control processor 10 establishes the exposure compensating model of each region, in firstth area
Domain 101 randomly selects the focus measurement point of setting quantity n, and n is positive integer, focuses measuring device 9 and obtains 1 coordinate of focus measurement point
(x1、y1), 2 coordinate (x of focus measurement point2、y2) ... focus measurement point n coordinate (xn、yn), and measure the first area
The corresponding focus value F of focus measurement point 1 in 101101(x1,y1), the corresponding focusing of focus measurement point 2 in the first area 101
Value F101(x2,y2) ... the corresponding focus value F of focus measurement point n in the first area 101101(xn,yn), control processor
10 obtain the mould of focus value and each focus measurement point relationship in first area 101 in first area 101 by the way of Mathematical treatment
Type, 101 exposure compensating model of first area are F101=f101(x,y)；Wherein, f101(x, y) can be linear fitting, can also be with
It is multinomial fitting, physical relationship is determined by practical 100 height change curve of crystal column surface；F101101 exposure focusing of first area
Value；
As shown in fig. 6, uniformly choosing the focus measurement point of setting quantity m in the second area 102, m is positive integer, is gathered
Burnt measuring device 9 obtains 21 coordinate (x of focus measurement point21、y21), 22 coordinate (x of focus measurement point22、y22) ... focus measurement point
M coordinate (xm、ym), and measure the corresponding focus value F of focus measurement point 21 in the second area 102102(x21,y21), described
The corresponding focus value F of focus measurement point 22 in two regions 102102(x22,y22) ... focus measurement point in the second area 102
The corresponding focus value F of m102(xm,ym), control processor 10 obtains focus value in second area 102 by the way of Mathematical treatment
With the model of each focus measurement point relationship of second area 102,102 exposure compensating model of second area is F102=f102(x,y)；
F102Represent 102 exposure focusing value of second area；In order to guarantee the precision of measurement, several focusing are uniformly chosen in each region
Measuring point, this example are that 18 measurement focus measurement points are chosen in second area 102 (annular region), measure focus measurement point and choose
More, then measurement is more accurate；
Meanwhile establishing 103 exposure compensating model of third region in the same way is F103=f103(x, y), the 4th area
104 exposure compensating model of domain is F104=f104The n-quadrant (x, y) ... exposure compensating model is F10N=f10N(x,y)；10N generation
Table n-quadrant, F10NN-quadrant exposure focusing value；
Then, it is exposed respectively using each region of exposure machine 5 to the crystal column surface 100, in the exposure machine 5
Exposing unit 6 when being located at the same area of the crystal column surface 100, corresponding to the parameters selection of the exposure machine 5 region
Exposure focusing value, in first langley 201 of exposure machine 5 as Figure 7-8, random point in second area,
The exposure parameter of the exposure machine 5 selects F102；The phase of the crystal column surface 100 is bridged in the exposing unit 6 of the exposure machine 5
When two or more regions of neighbour, the exposure focusing value in each region is compensated by weight mode；
Specifically, the exposure focusing value that each region is compensated by weight mode, including establishing trans-regional exposure
Compensation model is exposed as unit of the exposure area of exposure machine 5, measures 5 one langleys of the exposure machine described
The accounting of 100 each region of crystal column surface establishes exposure compensating model, F in any one langley of the exposure machine 5
=k1f101(x,y)+k2f102(x,y)+k3f103(x,y)+k4f104(x,y)+……+kNf10N(x, y), wherein k1Represent the firstth area
The percentage of the occupied area in the langley of the exposure machine 5 of domain 101, k2Second area 102 is represented in the exposure machine 5
Langley in occupied area percentage, k3Represent the shared face in the langley of the exposure machine 5 of third region 103
Long-pending percentage, k4Represent the percentage of the occupied area in the langley of the exposure machine 5 of the fourth region 104, kNRepresent
The percentage of n-quadrant occupied area in the langley of the exposure machine 5, k1+k2+k3+k4+……+kN=1.
In detail, as Figure 7-8, in second langley 202 of exposure machine 5,5 focusing measurements are randomly selected
Point, the first focus measurement point 301 in second area 102；Second focus measurement point 302 in second area 102；First area 101
Interior first focus measurement point 303；Second focus measurement point 304 in first area 101；Tertiary focusing measures in first area 101
Point 305；Thus F is obtained202=3/5*f101(x,y)+2/5f102(x,y)；F202For second langley 202 of exposure machine 5
Exposure focusing value.
Wherein, in above-mentioned steps, 1 coordinate (x of focus measurement point in the first area 1011、y1), the first area
2 coordinate (x of focus measurement point in 1012、y2) ... focus measurement point n coordinate (x in the first area 101n、yn) can with institute
The center of circle of wafer 2 is stated to obtain for former focus measurement point.
The above is only the embodiments of the present invention, and the description thereof is more specific and detailed, but can not therefore understand
For a limitation on the scope of the patent of the present invention.It should be pointed out that for those of ordinary skill in the art, not taking off
Under the premise of from the utility model design, various modifications and improvements can be made, these belong to the protection of the utility model
Range.
Claims (7)
1. a kind of exposure focusing compensates equipment, which is characterized in that including topographical surface measuring device, focus measuring device and exposure
Machine；
The exposure machine includes exposure base, and the exposing unit being correspondingly arranged up and down with exposure base；The exposure base
For carrying wafer；The topographical surface measuring device and the focusing measuring device are built in the exposure machine, and institute
It states topographical surface measuring device and the focusing measuring device is connected with the exposure machine；The topographical surface measuring device is used
The topographical surface figure of the wafer is obtained in measurement；The focusing measuring device obtains the crystal column surface for measurement and respectively focuses
The focus value and coordinate of measurement point；The exposure machine carries out region division simultaneously to the crystal column surface according to the topographical surface figure
The exposure compensating model of each region is established according to the focus value of each region focus measurement point and coordinate, exposing unit is according to each
The exposure compensating model in a region is exposed processing to each region of the crystal column surface respectively.
2. exposure focusing according to claim 1 compensates equipment, which is characterized in that the exposure machine includes stepper litho
Machine.
3. exposure focusing according to claim 1 compensates equipment, which is characterized in that the exposure machine includes scan-type photoetching
Machine.
4. exposure focusing according to claim 1 compensates equipment, which is characterized in that it further include control processor, the control
Processor processed is integrated on the exposure machine, the topographical surface measuring device and the focusing measuring device with the control
Processor is connected；The wafer that the control processor is obtained according to the topographical surface measuring device measurement is outwardly
Shape figure carries out region division to the crystal column surface, and is obtained according to region division result and the focusing measuring device measurement
Each focus measurement point focus value and coordinate establish the exposure compensating model of each region；The control processor also with it is described
Exposing unit is connected, to control the exposing unit according to the exposure compensating model of each region to the crystal column surface
Each region be exposed processing respectively.
5. exposure focusing according to claim 4 compensates equipment, which is characterized in that the control processor includes micro electric
Brain.
6. exposure focusing according to claim 1 compensates equipment, which is characterized in that the topographical surface measuring device includes
Video camera.
7. exposure focusing according to claim 6 compensates equipment, which is characterized in that the video camera includes industry camera shooting
Machine.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820858120.9U CN208297927U (en) | 2018-06-05 | 2018-06-05 | Exposure focusing compensates equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820858120.9U CN208297927U (en) | 2018-06-05 | 2018-06-05 | Exposure focusing compensates equipment |
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| CN208297927U true CN208297927U (en) | 2018-12-28 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111208144A (en) * | 2020-03-05 | 2020-05-29 | 上海御微半导体技术有限公司 | Defect detection system and defect detection method |
-
2018
- 2018-06-05 CN CN201820858120.9U patent/CN208297927U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111208144A (en) * | 2020-03-05 | 2020-05-29 | 上海御微半导体技术有限公司 | Defect detection system and defect detection method |
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