CN208297403U - A kind of measuring device of GaN epitaxy wafer interface thermal resistance - Google Patents
A kind of measuring device of GaN epitaxy wafer interface thermal resistance Download PDFInfo
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- CN208297403U CN208297403U CN201820811501.1U CN201820811501U CN208297403U CN 208297403 U CN208297403 U CN 208297403U CN 201820811501 U CN201820811501 U CN 201820811501U CN 208297403 U CN208297403 U CN 208297403U
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Abstract
The utility model discloses a kind of measuring devices of GaN epitaxy wafer interface thermal resistance, comprising: ultraviolet pulse laser, continuous wave laser, lens group, dichroic beamsplitter, ultraviolet light focusing objective len, photodetector；Further include: pellicle mirror, band pass filter, convex lens, CCD camera.Heating laser is set as the ultraviolet pulse laser that wavelength is 355nm by the utility model, exploring laser light is set as the continuous laser that wavelength is 325nm, and coaxial operation is carried out, to solve the problems, such as that existing thermal transient reflection method for measuring GaN epitaxy wafer interface thermal resistance needs to add metal-coated films energy converter or progress device fabrication on the surface GaN.
Description
Technical field
The utility model relates to arrive semiconductor material interface thermal resistance measurement technology, more particularly to a kind of GaN epitaxy chip
The measuring device of interface resistance.
Background technique
Semiconductor material with wide forbidden band (Eg is greater than or equal to 2.3eV) is referred to as third generation semiconductor material, mainly includes
SiC, GaN, diamond etc. have forbidden bandwidth big, and electronics drift saturated velocity is high, dielectric constant is small, the spy that conducts electricity very well
Point, in fields such as high power devices, GaN base semiconductor material with wide forbidden band using more and more extensive, heat management problems are increasingly
Obviously, i.e., GaN high-power component can not be spread out in the waste heat that grid nearby generates in time in the operating condition, lead to device
Junction temperature increases, and influences output power, shortens the working life.Wherein between GaN layer and substrate layer there are transition zone or nucleating layer, with
And the factors such as lattice mismatch result in interface resistance presence between GaN layer and substrate layer, thus influence device inside heat dissipation.Cause
How this, which fast and accurately carries out characterization to interface resistance, becomes key.
To solve the above problems, there are three ways to existing measurement semiconductor material with wide forbidden band interface resistance, the first
It is Raman spectroscopy, Raman spectrum thermal measurement method is in daily use in the GaN material system to be studied, and principle is to pass through drawing
Graceful peak in-migration assesses device temperature change, but Raman spectrum thermal measurement method, it is desirable that based on the device prepared, calorifics is surveyed
It is high to try process cost, cannot realize rapid survey in wafer material level, the period is long；Second is time domain heat reflection method, time domain
Heat reflection method is a kind of pump-probe measuring technique based on ultrafast laser, is mainly used for measuring the film within 100 nm
Thermal conductivity.Femto-second laser needed for this method is expensive, and data acquisition takes a long time, and needs to plate one layer of gold in sample surfaces
Belong to film as energy converter to be used to absorb and detect, and the uncertainty of the metal transducing film thickness and thermal conductive property will cause
Measurement error；The third is thermal transient bounce technique, and thermal transient bounce technique is based on photo-thermal effect, i.e. sample surface reflectivity
Opposite variation and the variation of surface temperature between it is in a linear relationship in certain temperature range, using pump-probe method to quilt
The variation of sample surfaces reflectivity after pulsed laser heating carries out real-time measurement, for assessing the transient change of surface temperature,
The curve that resulting surface reflectivity changes over time is referred to as thermal transient reflectivity curve, finally by model and empirical curve
Fitting is to obtain the interface resistance of sample.But exploring laser light used in current this method and heating laser are visible light
Or infrared light, GaN epitaxy chip to be measured can be penetrated, it is still necessary to which metal coating is used to heat and detect, disadvantage and time domain
Heat reflection method is similar.
Therefore, the existing technology needs to be improved and developed.
Utility model content
The purpose of this utility model is to provide the measuring devices of GaN epitaxy wafer interface thermal resistance, it is intended to be based on thermal transient
On the basis of bounce technique, heating laser is set as the ultraviolet pulse laser that wavelength is 355nm, exploring laser light is set as wavelength
For the continuous laser of 325nm, and coaxial operation is carried out to heating laser and exploring laser light, to solve existing thermal transient bounce technique
It needs the problem of GaN epitaxy surface adds metal-coated films or processing device, realizes when measuring GaN epitaxy wafer interface thermal resistance
The quick nondestructive of GaN epitaxy wafer interface thermal resistance measures, and device is easy, easy to operate, as a result accurately.
To solve the above problems, the technical solution of the utility model is as follows:
A kind of measuring device of GaN epitaxy wafer interface thermal resistance, comprising: ultraviolet pulse laser, continuous wave laser, lens
Group, dichroic beamsplitter, ultraviolet light focusing objective len, photodetector；Wherein,
Ultraviolet pulse laser is for generating ultraviolet pulse laser；
Continuous wave laser is for generating continuous laser；
Lens group is for expanding ultraviolet pulse laser；
Dichroic beamsplitter is used to the ultraviolet pulse laser after expanding and continuous laser closing beam and coaxial, the dichroic
Spectroscope and the ultraviolet pulse laser of plane angle incidence at 45 ° where it are total transmissivity, the dichroic beamsplitter and its place
The continuous laser of plane angle incidence at 45 ° is total reflection；
Ultraviolet light focusing objective len is used to the coaxial ultraviolet pulse laser and continuous laser converging to GaN epitaxy to be measured
On chip；
Photodetector is shown for receiving from the reflected optical signal of GaN epitaxy wafer surface to be measured, then by oscillograph
Show.
Further, the ultraviolet pulse laser wavelength is 355nm.
Further, the continuous laser wavelength is 325nm.
Further, ultraviolet pulse laser is expanded the hot spot to ultraviolet pulse laser than continuous laser by the lens group
At least one big order of magnitude of hot spot, it is described expand after the spot radius of ultraviolet pulse laser be 70 ~ 90 μm.
Further, the measuring device of the GaN epitaxy wafer interface thermal resistance, further includes: pellicle mirror, bandpass filtering
Piece, convex lens；Wherein,
Pellicle mirror is for transmiting and reflecting from the reflected ultraviolet pulse laser of GaN epitaxy wafer surface to be measured and continuously
Laser；
Band pass filter is for filtering ultraviolet pulse laser；
Convex lens is used to the optical signal for filtering ultraviolet pulse laser focusing on photodetector.
Further, the measuring device of the GaN epitaxy wafer interface thermal resistance, further includes: CCD camera；The CCD phase
Machine is for the ultraviolet pulse laser of real-time monitoring GaN epitaxy wafer surface and the hot spot of continuous laser.
The measuring device of the utility model measures GaN epitaxy wafer interface thermal resistance, including following below scheme:
Emit ultraviolet pulse laser, the ultraviolet pulse laser is used to heat GaN epitaxy chip to be measured；
Emit continuous laser, the continuous laser is as exploring laser light；
Ultraviolet pulse laser is expanded；
Ultraviolet pulse laser and continuous laser close beam and coaxial；
Ultraviolet pulse laser and continuous laser converge on GaN epitaxy chip to be measured；
It receives from the reflected optical signal of GaN epitaxy wafer surface to be measured；
According to photo-thermal effect, the variation of GaN epitaxy wafer surface temperature is assessed by the change intensity of the optical signal, is obtained
To thermal transient reflectivity curve；
GaN epitaxy wafer interface thermal resistance to be measured is obtained by fit procedure fitting.
Further, the reception further includes following before the reflected optical signal of GaN epitaxy wafer surface to be measured
Process:
Ultraviolet pulse laser is filtered, for eliminating influence of the pulse signal to heat reflection signal.
Further, the measuring device of the GaN epitaxy wafer interface thermal resistance further includes following below scheme:
The ultraviolet pulse laser of real-time monitoring GaN epitaxy wafer surface and the hot spot of continuous laser.
It is further, described that GaN epitaxy wafer interface thermal resistance to be measured is obtained by fit procedure fitting includes to flow down
Journey:
Thermal transient reflectivity curve is imported in three layers of heat transfer model of GaN layer, interface resistance layer and substrate layer；
The hot spot half of the thickness of GaN layer and substrate layer, thermal conductivity, specific heat capacity, density and ultraviolet pulse laser is set
Diameter, pulse width；
The thickness of input interface thermoresistance layer, thermal conductivity carry out automatic Fitting, if the curve of the analog signal of output and institute
The difference between thermal transient reflectivity curve each point is stated not in the range of least square method provides, then the thickness of immobile interface thermoresistance layer
Degree, inputs thermal conductivity again, if the difference between the curve of analog signal and the thermal transient reflectivity curve each point meets most
When the range that small square law provides, exports fitting result and export fitting result figure.
The beneficial effects of the utility model include: the measurement dress of GaN epitaxy wafer interface thermal resistance provided by the utility model
It sets, by the way that heating laser is set as the ultraviolet pulse laser that wavelength is 355nm, it is 325nm's that exploring laser light, which is set as wavelength,
The laser of continuous laser, both wavelength is shallow (within 100nm) to GaN epitaxy chip penetration depth, can be realized GaN epitaxy
The heating and reflection on surface, accurate characterization GaN instantaneously heat on surface rear surface temperature and change with time；And the utility model
Data acquisition time is short, measures the time that a GaN epitaxy chip only needs 20-30 seconds, and measurement is quick；The utility model is to heating
Laser and exploring laser light carry out coaxial operation, make the heating laser hot spot and exploring laser light light in GaN epitaxy wafer surface to be measured
Spot, which is stablized, to be overlapped, and experimental provision is easy, easy to operate；The utility model is for GaN epitaxy chip (being made before device)
Measurement, consider from industry perspective, save the cost.
Detailed description of the invention
Fig. 1 is the flow chart according to the measurement method of the GaN epitaxy wafer interface thermal resistance of the utility model embodiment.
Fig. 2 is that GaN epitaxy wafer interface to be measured is obtained by fit procedure fitting according to the utility model embodiment
The flow chart of thermal resistance.
Fig. 3 is the GaN epitaxy chip instrumentation plan according to the utility model embodiment.
Fig. 4 is three layers of heat transfer model side according to the GaN layer of the utility model embodiment, interface resistance layer and substrate layer
Face figure.
Fig. 5 is a kind of fitting result figure according to the utility model embodiment.
Fig. 6 is another fitting result figure according to the utility model embodiment.
Fig. 7 is the light path schematic diagram according to the measuring device of the GaN epitaxy wafer interface thermal resistance of the utility model embodiment.
Specific embodiment
The utility model provides a kind of measuring device of GaN epitaxy wafer interface thermal resistance, for make the purpose of this utility model,
Technical solution and effect are clearer, clear, and the utility model is further described below.It should be appreciated that this place is retouched
The specific embodiment stated is only used to explain the utility model, is not used to limit the utility model.
As shown in fig. 7, a kind of measuring device of GaN epitaxy wafer interface thermal resistance, comprising:
10, ultraviolet pulse laser, for emitting ultraviolet pulse laser；
20, continuous wave laser, for emitting continuous laser；
30, lens group is expanded for ultraviolet pulse laser；
40, dichroic beamsplitter, for close beam and coaxial for ultraviolet pulse laser and continuous laser；
50, ultraviolet light focusing objective len, for ultraviolet pulse laser and continuous laser to be converged to GaN epitaxy chip to be measured
On；
60, photodetector, for receiving from the reflected optical signal of GaN epitaxy wafer surface to be measured；
70, pellicle mirror, for transmiting and reflecting ultraviolet pulse laser and continuous laser；
80, band pass filter, for filtering ultraviolet pulse laser；
90, convex lens, for focusing the optical signal for filtering ultraviolet pulse laser；
The light path schematic diagram of the utility model embodiment is as shown in fig. 7, generate ultraviolet pulse by ultraviolet pulse laser 10
Laser generates continuous laser by continuous wave laser 20；By dichroic beamsplitter 40 by the ultraviolet pulse laser after expanding and continuously
Swash combiner simultaneously it is coaxial, dichroic beamsplitter 40 and its where plane angle incidence at 45 ° ultraviolet pulse laser be total transmissivity, two
It is total reflection to the continuous laser of plane angle incidence at 45 ° where color spectroscope 40 and its；The coaxial ultraviolet pulse laser
It is converged to after ultraviolet light focusing objective len 50 on GaN epitaxy chip to be measured with continuous laser；From GaN epitaxy wafer surface to be measured
Reflected ultraviolet pulse laser and continuous laser are after the transmission of pellicle mirror 70 and reflection, then pass through band pass filter 80
Ultraviolet pulse laser is filtered, further, the optical signal for filtering ultraviolet pulse laser focuses on photodetection by convex lens 90
Device is received by photodetector 60, then is shown by oscillograph 61.
In practical applications, the device according to used in the measurement method of the GaN epitaxy wafer interface thermal resistance, is also wrapped
Include CCD camera 1；CCD camera 1 is for the ultraviolet pulse laser of real-time monitoring GaN epitaxy wafer surface and the light of continuous laser
Spot, it is ensured that ultraviolet pulse laser and continuous laser are homocentric in sample surfaces, as shown in figure 3, and thus recording ultraviolet arteries and veins
The spot radius and pulse width of impulse light.
In practical applications, except 40 place plane of dichroic beamsplitter and incident ultraviolet pulse laser and continuous laser are equal
Except angle at 45 °, ultraviolet pulse laser and continuous laser and the equal vertical incidence of other optical elements.
As shown in Figure 1, the process of measuring device measurement GaN epitaxy wafer interface thermal resistance provided by the utility model is as follows:
Step 100: transmitting ultraviolet pulse laser, the ultraviolet pulse laser are used to heat GaN epitaxy chip to be measured；
Step 200: transmitting continuous laser, the continuous laser is as exploring laser light；
Step 300: ultraviolet pulse laser is expanded；
Step 400: ultraviolet pulse laser and continuous laser close beam and coaxial；
Step 500: ultraviolet pulse laser and continuous laser converge on GaN epitaxy chip to be measured；
Step 600: receiving from the reflected optical signal of GaN epitaxy wafer surface to be measured；
Step 700: according to photo-thermal effect, GaN epitaxy wafer surface temperature being assessed by the change intensity of the optical signal
Variation, obtain thermal transient reflectivity curve；
Step 800: GaN epitaxy wafer interface thermal resistance to be measured is obtained by fit procedure fitting.
In practical applications, the utility model is higher than the band gap of the wide bandgap semiconductors such as GaN using ultraviolet laser energy, will
Ultraviolet pulse laser is as heating laser, some in GaN semiconductor when heating to the surface of GaN epitaxy chip to be measured
Electronics will transit to conduction band from valence band, generate strong light absorption, thus cause the instantaneous of GaN epitaxy wafer surface temperature to be measured
It increases, further, the wavelength of the ultraviolet pulse laser is 355nm.
Using continuous laser as exploring laser light, the surface of GaN epitaxy chip to be measured is detected, is based on photo-thermal effect,
When the temperature change of GaN epitaxy wafer surface to be measured, wafer surface can also change the reflectivity of incident laser, between the two
Relationship can specifically use the formula expression of single order:.WhereinIndicate incident
The reflectivity changes value of laser,Indicate the temperature change value of GaN epitaxy wafer surface to be measured, k is hot reflection coefficient, value
Range is usually 10-2 – 10-5 K-1.Hot reflection coefficient depends on the wavelength, incident of the material of sample, incident laser
The geometric properties of angle and incidence surface.The temperature change and wafer surface of GaN epitaxy wafer surface it can be seen from formula
It is in a linear relationship to the variation of the reflectivity of incident laser, it is possible thereby to according to the spy for being incident on GaN epitaxy wafer surface to be measured
The change intensity of laser light signal is surveyed to assess the variation of GaN epitaxy wafer surface temperature, obtains thermal transient reflectivity curve.Into one
Step ground, the wavelength of the continuous laser are 325nm.
In practical applications, it is heated on surface of the ultraviolet pulse laser to GaN epitaxy chip to be measured, continuous laser pair
When the surface of GaN epitaxy chip to be measured is detected, the penetration depth of ultraviolet pulse laser and continuous laser to GaN epitaxy chip
Less than 100nm, in the art, the GaN layer thickness of GaN epitaxy chip to be measured is usually 1-2 μm, it can thus be seen that
Ultraviolet laser is shallow to the penetration depth of GaN epitaxy chip to be measured, and measurement accuracy is high.
In practical applications, the instrumentation plan of GaN epitaxy chip to be measured is as shown in figure 3, real-time monitoring GaN epitaxy chip
The ultraviolet pulse laser on surface and the hot spot of continuous laser record the spot radius and pulse width of ultraviolet pulse laser, will be purple
Outer pulse laser expands, it is ensured that the hot spot of ultraviolet pulse laser at least one order of magnitude bigger than the hot spot of continuous laser, and expand
The spot radius of ultraviolet pulse laser afterwards is 70 ~ 90 μm, is far longer than the GaN layer thickness of GaN epitaxy chip, on the one hand, this
The purpose that sample is done is that the thermal diffusion process of GaN epitaxy chip to be measured can be used when step 800 is fitted by fit procedure
One-dimensional heat conduction models fitting；On the other hand, it can be more convenient for heating to GaN epitaxy chip to be measured.
In practical applications, ultraviolet pulse laser is subjected to accurate coaxial operation with continuous laser, it is ensured that two beam laser exist
GaN epitaxy wafer surface to be measured is homocentric coaxial, on the one hand, purpose is to be able to observe that apparent heat reflection signal, separately
On the one hand, it is therefore intended that so that the measuring system of GaN epitaxy wafer interface thermal resistance is applicable in one-dimensional heat conduction model, convenient in step 800
It is fitted by fit procedure.
In practical applications, it is receiving before the reflected optical signal of GaN epitaxy wafer surface to be measured, is filtering first
Ultraviolet pulse laser only receives the optical signal of reflected exploring laser light, it is therefore intended that eliminates the pulse of ultraviolet pulse laser
Influence of the signal to heat reflection signal.
Further, referring to fig. 2, step 800 includes:
801: thermal transient reflectivity curve being imported in three layers of heat transfer model of GaN layer, interface resistance layer and substrate layer, such as
Shown in Fig. 4；
802: setting GaN layer and the thickness of substrate layer, thermal conductivity, specific heat capacity, density and ultraviolet pulse laser hot spot
Radius, pulse width；
803: the thickness of input interface thermoresistance layer, thermal conductivity, interface resistance can be expressed with formula are as follows:, the interface resistance is the interface resistance simulated.If the simulation letter of output
Number curve and the thermal transient reflectivity curve each point between difference not in the range of least square method provides, then it is defeated again
Enter thickness, the thermal conductivity of interface resistance layer, if the difference between the curve of analog signal and the thermal transient reflectivity curve each point
When value meets the range that least square method provides, exports fitting result and export fitting result figure, the interface resistance of the simulation
Value is just identified as actual interface resistance value.In practical applications, the thickness for being normally set up interface resistance layer is constant, only changes
The thermal conductivity of the interface resistance layer is fitted.
It should be understood that three layers of heat transfer model of the GaN layer, interface resistance layer and substrate layer are based on transmission line
Theory is established, which carries out analogy for heat transfer and electrical conduction, such as temperature is analogous to voltage, and heat flow density is analogous to electricity
Stream simplifies the solution procedure in fit procedure, and the heat for solving in GaN layer, interface resistance layer and substrate layer multilayer film passes
Lead problem.
In practical applications, the utility model is using monte carlo method (Monte Carlo method, also referred to as statistics mould
Quasi- method) carry out automatic Fitting, that is, the initial range to fitting parameter is provided, is found in the region of search and meets least square
Parameter to be measured RANDOM SOLUTION, probability distribution according to analog result finds the optimal solution of fitting.Monte carlo method is especially suitable
Fitting for multiple parameters to be measured.Further, fit procedure is using Mathematica program or any of Matlab program
Kind.Mathematica program and Matlab program are mathematical software, and master data unit is matrix, have brilliance
Numerical computation, the sign computation with professional standards, word processing, the functions such as visual modeling emulation and real-time control；
Mathematica is a set of mathematical tool software for integrating numerical value and symbolic operation, provides easy-to-use top science
Computing environment, calculation method and abundant mathematical function library and huge mathematical knowledge of the Mathematica with high-order
Library can provide accurate numerical operation result.It should be understood that Matlab program is more concerned with numerical solution,
Mathematica program is more concerned with analytic solutions.It should be understood that determining the fit procedure of interface resistance in the utility model
It can be realized with any computer programming language, be not limited to Mathematica or Matlab.
As shown in figure 5, the result figure that the GaN epitaxy chip of the present embodiment fits, result is the GaN epitaxy of the present embodiment
Wafer interface thermal resistance (Thermal Boundary Resistance, abbreviation TBR)=37.5 m2K/GW.As shown in figure 5, in mould
When quasi- TBR changes 20%, simulation curve can deviate considerably from experiment curv.The survey of the GaN epitaxy wafer interface thermal resistance of the utility model
Amount method can be by control errors between 10% to 5%.The final fitting result figure of the utility model embodiment is as shown in Figure 6.
The measuring device of GaN epitaxy wafer interface thermal resistance provided by the utility model, compared to using Raman spectroscopy and
For the device of the methods of time domain heat reflection, data acquisition time is very short, usually only needs 20-30 seconds or so time
Measure a sample；Ultraviolet laser is less than 100nm to the penetration depth of GaN epitaxy chip, realizes surface heating and detection, is not necessarily to
Metal-coated films transducing layer, therefore tested GaN epitaxy sample wafer is not damaged；Existing GaN epitaxy wafer interface heat
The measurement method of resistance is mostly based on the device prepared, and the utility model (is made for wide bandgap semiconductor chip
Before device) measurement, consider from industry perspective, more easy, save the cost；The measuring device letter of the utility model
It is single, it is easy to operate.
It should be understood that the application of the utility model is not limited to above-mentioned citing, those of ordinary skill in the art are come
It says, it can be modified or changed according to the above description, and all these modifications and variations all should belong to the appended power of the utility model
The protection scope that benefit requires.
Claims (6)
1. a kind of measuring device of GaN epitaxy wafer interface thermal resistance characterized by comprising ultraviolet pulse laser continuously swashs
Light device, lens group, dichroic beamsplitter, ultraviolet light focusing objective len, photodetector；Wherein,
Ultraviolet pulse laser is for generating ultraviolet pulse laser；
Continuous wave laser is for generating continuous laser；
Lens group is for expanding ultraviolet pulse laser；
Dichroic beamsplitter is used to close the ultraviolet pulse laser after expanding and continuous laser beam and coaxial, the dichroic light splitting
Mirror and the ultraviolet pulse laser of plane angle incidence at 45 ° where it are total transmissivity, the dichroic beamsplitter and plane where it
The continuous laser of angle incidence at 45 ° is total reflection；
Ultraviolet light focusing objective len is used to the coaxial ultraviolet pulse laser and continuous laser converging to GaN epitaxy chip to be measured
On；
Photodetector is for receiving from the reflected optical signal of GaN epitaxy wafer surface to be measured, then by oscilloscope display.
2. the measuring device of GaN epitaxy wafer interface thermal resistance according to claim 1, which is characterized in that the ultraviolet arteries and veins
The a length of 355nm of impulse light wave.
3. the measuring device of GaN epitaxy wafer interface thermal resistance according to claim 1, which is characterized in that described continuous sharp
The a length of 325nm of light wave.
4. the measuring device of GaN epitaxy wafer interface thermal resistance according to claim 1, which is characterized in that the lens group
Ultraviolet pulse laser is expanded to the hot spot of ultraviolet pulse laser at least one order of magnitude bigger than the hot spot of continuous laser, the expansion
The spot radius of ultraviolet pulse laser after beam is 70 ~ 90 μm.
5. the measuring device of GaN epitaxy wafer interface thermal resistance according to claim 1, which is characterized in that further include: it is semi-transparent
Mirror, band pass filter, convex lens；Wherein,
Pellicle mirror is for transmiting and reflecting from the reflected ultraviolet pulse laser of GaN epitaxy wafer surface to be measured and continuously swash
Light；
Band pass filter is for filtering ultraviolet pulse laser；
Convex lens is used to the optical signal for filtering ultraviolet pulse laser focusing on photodetector.
6. the measuring device of GaN epitaxy wafer interface thermal resistance according to claim 1, which is characterized in that further include: CCD
Camera；The CCD camera is for the ultraviolet pulse laser of real-time monitoring GaN epitaxy wafer surface and the hot spot of continuous laser.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113419120A (en) * | 2021-05-08 | 2021-09-21 | 同济大学 | Method and system for measuring thermal resistance of dielectric film and metal interface |
| CN113514492A (en) * | 2021-06-02 | 2021-10-19 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Method and device for measuring interface thermal resistance |
| WO2022226931A1 (en) * | 2021-04-29 | 2022-11-03 | 华为技术有限公司 | Laminated structure for electronic device and manufacturing method therefor |
-
2018
- 2018-05-29 CN CN201820811501.1U patent/CN208297403U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022226931A1 (en) * | 2021-04-29 | 2022-11-03 | 华为技术有限公司 | Laminated structure for electronic device and manufacturing method therefor |
| CN113419120A (en) * | 2021-05-08 | 2021-09-21 | 同济大学 | Method and system for measuring thermal resistance of dielectric film and metal interface |
| CN113514492A (en) * | 2021-06-02 | 2021-10-19 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Method and device for measuring interface thermal resistance |
| CN113514492B (en) * | 2021-06-02 | 2023-09-01 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Method and device for measuring interface thermal resistance |
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