CN208284492U - Copper indium gallium selenide chemical thought CSD integral device - Google Patents
Copper indium gallium selenide chemical thought CSD integral device Download PDFInfo
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- CN208284492U CN208284492U CN201820924646.2U CN201820924646U CN208284492U CN 208284492 U CN208284492 U CN 208284492U CN 201820924646 U CN201820924646 U CN 201820924646U CN 208284492 U CN208284492 U CN 208284492U
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- csd
- main reaction
- reaction region
- indium gallium
- gallium selenide
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a kind of copper indium gallium selenide chemical thought CSD integral devices.The copper indium gallium selenide chemical thought CSD integral device is respectively arranged with temperature sensor on each heater in main reaction region, can feedback heater temperature, the temperature in main reaction region can thus be regulated and controled by temperature sensor and heater, main reaction region end, which is provided with Fluorescence Spectrometer, simultaneously can feed back the thickness of cadmium sulphide membrane, to adjust the thickness of the cadmium sulphide membrane of generation, chamber door, which can be opened, simultaneously is conveniently adjusted, the blower of main reaction region front end can prevent solution adverse current from going out main reaction region, integrally the circular design in point top and the bottom can reduce occupation area of equipment to equipment, and pass through the equipment plated film, it rinses, air-dry integration, copper-indium-galliun-selenium film solar cell is set to involve in go to out and can directly be given to next process, save many time, be conducive to improve production efficiency.
Description
Technical field
The utility model relates to technical field of solar batteries more particularly to a kind of copper indium gallium selenide chemical thought CSD
Integral device.
Background technique
With the shortage of global warming, the deterioration of the ecological environment and conventional energy resource, it is sustainable that solar energy has become various countries
The grand strategy decision of development.Solar battery is exactly a kind of device for converting solar energy into electric energy, is had more than electric energy, wind
The energy of the resources such as energy, and promise to be the mainstay of future electrical energy industry.Solar battery is broadly divided into silicon solar
Battery, compound semiconductor film battery, organic polymer battery, organic thin film cells etc..Wherein, copper indium gallium selenide (CIGS) is thin
Film solar cell belongs to semiconductor film film battery, since copper indium gallium selenide has direct band gap structure, and suction with higher
Receive coefficient, film layer need to only reach micron order can whole absorbabilities be greater than the incident light of CIGS thin-film bandwidth, therefore
Copper-indium-galliun-selenium film solar cell can save a large amount of raw material, and by rare element price increase and there is lack of raw materials is influenced
It is relatively small, have many advantages, such as that light absorpting ability is strong, discharge stability is good, high conversion efficiency, thus before having a vast market
Scape.
Copper-indium-galliun-selenium film solar cell is mainly made of Window layer, buffer layer, absorbed layer, back electrode and substrate.It is slow
The preparation for rushing layer generally uses chemical deposition, such as CSD(cadmium sulfide) chemical deposition, solution is ejected into substrate using nozzle
It is upper to be prepared by chemical deposition.The cadmium sulphide membrane thickness formed on a substrate of chemical deposition at present is unable to control, and chemistry is heavy
Copper-indium-galliun-selenium film solar cell rolls up remained on surface cadmium sulfide dust after product, influences battery efficiency, while chemical solution sprays
It is not uniform and stable enough.Stainless-steel roll discontinuity in equipment causes volume to deviate during walking, is easy to produce pleat
Wrinkle, solution are the temperature for reaching surface reaction, and too long, the amount of solution supply is unable to accurately control required time, and reaction solution exists
Mixing is uneven, impacts to film-formation result, and film forming thickness can not monitor in real time, and volume is easy to be heated not on heat block surface
?.
Utility model content
It is integrally set in order to solve the above technical problems, the utility model devises a kind of copper indium gallium selenide chemical thought CSD
It is standby.
The utility model adopts the following technical solution:
A kind of copper indium gallium selenide chemical thought CSD integral device, including set gradually let off roll, several carrying rollers,
Power controls roller and wind-up roll, cavity is provided between let off roll and wind-up roll, the transmission channel between let off roll and wind-up roll is set to
In cavity, cavity includes main reaction region, leading portion cleaning area, back segment cleaning area and air drying area, in the transmission channel in main reaction region
It is provided with the transfer roller of evenly distributed setting, is fixedly installed chemical solution spray head, main reaction region at the top of the Inner Front End of main reaction region
Having heaters is respectively set in interior lower section between transfer roller, and temperature sensor, leading portion cleaning are respectively arranged on each heater
It is respectively arranged with clear water nozzle in area and back segment cleaning area, is provided with blower in air drying area.
Preferably, the main reaction region front end is provided with the blower dried into main reaction region.
Preferably, the output position that unreels of the let off roll is provided with speed encoder.
Preferably, being provided with chamber door on the cavity, chamber door surface is transparent, and the main reaction region end is provided with fluorescence
Spectrometer.
It is connected to preferably, the transfer roller end passes through belt respectively with let off roll.
Preferably, the chemical solution spray head is connected to chemical solution liquid supply pipe, it is communicated on chemical solution liquid supply pipe pre-
Thermal.
Preferably, being provided with flowmeter on the chemical solution liquid supply pipe.
Preferably, being evenly arranged with the nozzle in multiple apertures 0.02cm on the chemical solution spray head, it is arranged at nozzle
There is ultrasonic oscillation device.
Preferably, the leading portion cleaning area and back segment cleaning area are connected separately with waste pipe, clear water nozzle is connected to clear water
Pipe, the waste pipe of leading portion cleaning area are connected to water pipe, back segment after passing sequentially through PH conditioning tank, wastewater collection tank, MVR processing equipment
The waste pipe of cleaning area is connected to water pipe after passing through filter screen.
Compared with prior art, the beneficial effect of the copper indium gallium selenide chemical thought CSD integral device is:
It 1, can be to the reality of CSD film-formation result and further battery for volume generation fold during in the prior art, walking volume
Border benefit has large effect, and the utility model just allows for the problem, evenly distributed on the Transfer pipe of main reaction region to set
The transfer roller being equipped with, transfer roller end pass through belt respectively and are connected to let off roll, slave drive, it is ensured that every transfer roller turns
It is fast uniformly to make volume that touch transfer roller in the cavity, then apply the power of a stable and uniform by transfer roller, make volume will not be because
Unbalance stress and generate fold.And during walking volume, deviation-rectifying system is added at retractable volume, guarantees that volume will not wander off, and receive
Let off roll can also play good control to volume speed, be at present the volume speed adjusting range of the utility model between (1-10m/min)；
2, solution needs to reach certain temperature during the reaction, and depends merely on heater heat radiation conduction on volume, rolls up face
Temperature is transmitted to this mode on solution again can be slow, so chemical solution of the utility model before chemical solution sprinkling supplies
Preheating device is increased in liquid pipe, to reduce the time that solution heats up in the cavity, improves the efficiency of actual production, and
And preheating device can control solution temperature at 30-90 DEG C, convenient for being adjusted when actual production；
3, in the prior art, can not be accurate for the amount of spray solution, cause film thickness to will appear non-uniform phenomenon,
So the utility model in feeding system, is classified solution, solution is got from tank, is calculated by pressure difference, general pipeline
The solution pressure on road is evenly distributed in board pipeline, and board carries out a range to liquid inventory by adjusting feed liquor and reflux
Control, then the flowmeter by being arranged on chemical solution liquid supply pipe accurately control flow, and range is substantially in 0-1500ml/
Min, accuracy keep the film layer plated more uniform, stable 2%；
4, chemical solution is after spraying, it is easy to occur mixing non-uniform problem, it is important to coating film thickness and one
It influences, the utility model is tentatively mixed chemical solution before entering chemical solution nozzle, using the spray in the aperture 0.02cm
Mouth mixes solution during sprinkling more evenly, while increasing ultrasonic oscillation device at nozzle, makes solution mixability can
To reach 90%, plating film uniformity is substantially improved；
5, for the ease of monitoring to coating film thickness, main reaction region end increases Fluorescence Spectrometer, fluorescence light in equipment
Spectrometer emits infrared ray, can by comparing and calculating because characteristic X-ray energies and wavelength that different elements issue are different
It obtains thicknesses of layers, and it is molten to be switched to according to the film thickness section of regulation by spectrometer feedback data for electric signal control and regulation mixing
The set temperature of the preheating device of liquid realizes automation control, both effectively knows thicknesses of layers, adjusts set temperature, can also
To save manpower；
6, traditional heating method controls shortage dynamics to heater, it is easy to cause the unevenness of heater actual temperature
Even property, to influence coating effects, the utility model is by temperature sensor is increased on each heater, to each heater
Monitoring temperature is carried out, when temperature occurs abnormal, the heater of single temperature anomaly can be adjusted, make volume in the cavity
Heated is not in non-uniform phenomenon；
7, many waste water are had in process of production to generate, we handle waste water classification, the waste water of leading portion cleaning area because
It to be excessive containing heavy metal, can be discharged in workshop in pH conditioning tank, wastewater pH tentatively be adjusted, then be transferred to wastewater collection first
It is after one timing of wastewater collection, which is got to again in MVR processing equipment, to be further processed, i.e., Ke Xunhuanliyong in tank；Back segment cleaning area
The waste water of generation, it is more completely, the waste water of back segment cleaning area is i.e. Ke Xunhuanliyong by filter screen filtration, realize waste water again
It utilizes, has saved water resource.
8, the chamber door of the copper indium gallium selenide chemical thought CSD integral device, which can be opened, is conveniently adjusted, before main reaction region
The blower at end can prevent solution adverse current go out main reaction region, equipment integrally point top and the bottom around design can reduce equipment land occupation
Area, and by the equipment plated film, flushing, air-dried integration, it involves in copper-indium-galliun-selenium film solar cell and goes to out just
It can be directly given to next process, save many time, be conducive to improve production efficiency.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the utility model；
Fig. 2 is a kind of flow chart of film thickness detection feedback regulation；
In figure: 1, let off roll, 2, wind-up roll, 3, tension control roll, 4, carrying roller, 5, main reaction region, 6, leading portion cleaning area, 7,
Back segment cleaning area, 8, air drying area, 9, chemical solution spray head, 10, heater, 11, temperature sensor, 12, blower, 13, clear water spray
Head, 14, Fluorescence Spectrometer.
Specific embodiment
Below by specific embodiment, and in conjunction with attached drawing, the technical solution of the utility model work is further specifically retouched
It states:
Embodiment: as shown in Fig. 1, a kind of copper indium gallium selenide chemical thought CSD integral device, including what is set gradually
Let off roll 1, several carrying rollers 4, tension control roll 3 and wind-up roll 2, are provided with cavity, let off roll and receipts between let off roll and wind-up roll
Transmission channel between winding up roller is set in cavity, and cavity includes main reaction region 5, leading portion cleaning area 6, back segment cleaning area 7 and air-dries
Area 8 is provided with the transfer roller of evenly distributed setting in the transmission channel in main reaction region, and fixation is set at the top of the Inner Front End of main reaction region
It is equipped with chemical solution spray head 9, having heaters 10 is respectively set in lower section between transfer roller in main reaction region, divides on each heater
It is not provided with temperature sensor 11, clear water nozzle 13 is respectively arranged in leading portion cleaning area and back segment cleaning area, is set in air drying area
It is equipped with blower 12, main reaction region front end is provided with the blower dried into main reaction region, and let off roll unreels output position setting
There is speed encoder, chamber door is provided on cavity, chamber door surface is transparent, and the main reaction region end is provided with Fluorescence Spectrometer
14, transfer roller end passes through belt respectively and is connected to let off roll, and chemical solution spray head is connected to chemical solution liquid supply pipe, chemical solution
It is communicated with preheating device on liquid supply pipe, flowmeter is provided on chemical solution liquid supply pipe, is evenly arranged on chemical solution spray head
The nozzle in multiple apertures 0.02cm is provided with ultrasonic oscillation device at nozzle, and leading portion cleaning area and back segment cleaning area are separately connected
There is waste pipe, clear water nozzle is connected to water pipe, and the waste pipe of leading portion cleaning area passes sequentially through PH conditioning tank, wastewater collection tank, MVR
Water pipe is connected to after processing equipment, the waste pipe of back segment cleaning area is by being connected to water pipe after filter screen.
The copper indium gallium selenide chemical thought CSD integral device in use, by copper-indium-galliun-selenium film solar cell volume from
Let off roll is unreeled into main reaction region, and main reaction region top Chemical solution spray head sprays thiourea solution and carries out chemical precipitation, makes copper
Generate cadmium sulphide membrane on the substrate of indium gallium selenium thin-film solar cells volume, later by leading portion cleaning area and back segment cleaning area into
Row cooling and surface clean, last air drying area are dried by blower, then reach wind-up roll winding, as shown in Fig. 2,
Main reaction region end increases Fluorescence Spectrometer in equipment, and Fluorescence Spectrometer emits infrared ray, because of the spy that different elements issue
It levies X-ray energy and wavelength is different, by comparing and can be calculated thicknesses of layers, and pass through spectrometer feedback data,
According to the film thickness section of regulation, switchs to the set temperature that electric signal controls to adjust the preheating device of mixed solution, realize automation
It controls, while regulating and controlling the temperature in main reaction region by temperature sensor and heater, thickness is excessively thin, is turned up in main reaction region
Temperature, thickness is blocked up, turns down the temperature in main reaction region, realizes the thickness for adjusting the cadmium sulphide membrane generated.
Embodiment described above is a kind of preferable scheme of the utility model, is not made to the utility model any
Formal limitation, there are also other variations and modifications on the premise of not exceeding the technical scheme recorded in the claims.
Claims (9)
1. a kind of copper indium gallium selenide chemical thought CSD integral device, including let off roll, several carrying rollers, tension set gradually
Control roller and wind-up roll, characterized in that cavity, the transmission between let off roll and wind-up roll are provided between the let off roll and wind-up roll
Channel is set in cavity, and cavity includes main reaction region, leading portion cleaning area, back segment cleaning area and air drying area, in main reaction region
It is provided with the transfer roller of evenly distributed setting in transmission channel, chemical solution spray is fixedly installed at the top of the Inner Front End of main reaction region
Head, having heaters is respectively set in lower section between transfer roller in main reaction region, is respectively arranged with temperature sensing on each heater
It is respectively arranged with clear water nozzle in device, leading portion cleaning area and back segment cleaning area, is provided with blower in air drying area.
2. copper indium gallium selenide chemical thought CSD integral device according to claim 1, characterized in that the main reaction
Area front end is provided with the blower dried into main reaction region.
3. copper indium gallium selenide chemical thought CSD integral device according to claim 1, characterized in that the let off roll
The output position that unreels be provided with speed encoder.
4. copper indium gallium selenide chemical thought CSD integral device according to claim 1, characterized in that on the cavity
It is provided with chamber door, chamber door surface is transparent, and the main reaction region end is provided with Fluorescence Spectrometer.
5. copper indium gallium selenide chemical thought CSD integral device according to claim 1, characterized in that the transfer roller
End passes through belt respectively and is connected to let off roll.
6. copper indium gallium selenide chemical thought CSD integral device according to claim 1, characterized in that the chemical solution
Liquid spray head is connected to chemical solution liquid supply pipe, is communicated with preheating device on chemical solution liquid supply pipe.
7. copper indium gallium selenide chemical thought CSD integral device according to claim 6, characterized in that the chemical solution
Flowmeter is provided on liquid liquid supply pipe.
8. copper indium gallium selenide chemical thought CSD integral device according to claim 1, characterized in that the chemical solution
It is evenly arranged with the nozzle in multiple apertures 0.02cm on liquid spray head, is provided with ultrasonic oscillation device at nozzle.
9. copper indium gallium selenide chemical thought CSD integral device according to claim 1, characterized in that the leading portion is clear
It washes area and back segment cleaning area and is connected separately with waste pipe, clear water nozzle is connected to water pipe, and the waste pipe of leading portion cleaning area successively leads to
It is connected to water pipe after crossing PH conditioning tank, wastewater collection tank, MVR processing equipment, the waste pipe of back segment cleaning area passes through after filter screen
It is connected to water pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820924646.2U CN208284492U (en) | 2018-06-14 | 2018-06-14 | Copper indium gallium selenide chemical thought CSD integral device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820924646.2U CN208284492U (en) | 2018-06-14 | 2018-06-14 | Copper indium gallium selenide chemical thought CSD integral device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208284492U true CN208284492U (en) | 2018-12-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820924646.2U Active CN208284492U (en) | 2018-06-14 | 2018-06-14 | Copper indium gallium selenide chemical thought CSD integral device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112599640A (en) * | 2021-01-22 | 2021-04-02 | 尚越光电科技股份有限公司 | Buffer layer deposition device of copper indium gallium selenide thin-film solar cell |
| CN113437169A (en) * | 2021-06-29 | 2021-09-24 | 浙江尚越新能源开发有限公司 | Flexible film photovoltaic roll-to-roll CSD spraying coating device |
-
2018
- 2018-06-14 CN CN201820924646.2U patent/CN208284492U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112599640A (en) * | 2021-01-22 | 2021-04-02 | 尚越光电科技股份有限公司 | Buffer layer deposition device of copper indium gallium selenide thin-film solar cell |
| CN113437169A (en) * | 2021-06-29 | 2021-09-24 | 浙江尚越新能源开发有限公司 | Flexible film photovoltaic roll-to-roll CSD spraying coating device |
| CN113437169B (en) * | 2021-06-29 | 2022-11-01 | 浙江尚越新能源开发有限公司 | Flexible film photovoltaic roll-to-roll CSD spraying coating device |
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