CN208256686U - It is a kind of for growing the substrat structure of semiconductor material - Google Patents
It is a kind of for growing the substrat structure of semiconductor material Download PDFInfo
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- CN208256686U CN208256686U CN201820613411.1U CN201820613411U CN208256686U CN 208256686 U CN208256686 U CN 208256686U CN 201820613411 U CN201820613411 U CN 201820613411U CN 208256686 U CN208256686 U CN 208256686U
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- 239000000463 material Substances 0.000 title claims abstract description 124
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 229910021389 graphene Inorganic materials 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 20
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 229910052582 BN Inorganic materials 0.000 description 11
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 11
- -1 graphite Alkene Chemical class 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 230000012010 growth Effects 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 206010040844 Skin exfoliation Diseases 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000035618 desquamation Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Abstract
The utility model discloses a kind of for growing the substrat structure of semiconductor material, including the first two-dimensional material layer, the second two-dimensional material layer, third two-dimensional material layer and the 4th two-dimensional material layer being sequentially overlapped from the bottom to top.The first two-dimensional material layer, third two-dimensional material layer are formed for same material.The second two-dimensional material layer, the 4th two-dimensional material layer are formed for same material, and different from the first two-dimensional material layer, third two-dimensional material layer material.The utility model can reduce the requirement to semiconductor material and substrate lattice matching degree, and substrate can reduce production cost with recycled for multiple times.
Description
Technical field
The utility model relates to technical field of semiconductors more particularly to a kind of for growing the substrate knot of semiconductor material
Structure.
Background technique
Conventional semiconductors technical field, semiconductor material often through metal oxide chemical vapor deposition or molecular beam outside
The method prolonged is grown in homogeneity or heterogeneous semiconductor substrate.When there are larger lattices to lose with substrate for the semiconductor of growth
With when, semiconductor material can because stress relaxation generate defect, crystal quality reduce.Due to the requirement of lattice match,
The semiconductor material of only limited kinds reaches device level crystal quality requirement at present.In addition, growing half on a semiconductor substrate
Conductor device, the generally several hundred nanometers of thickness of detector are to tens microns, and 300-600 microns of semiconductive substrate thickness, substrate is often
Occupy the major part of semiconductor devices production cost.
Two-dimensional layer material will pass through Van der Waals force using it as substrate growth semiconductor material because surface does not have dangling bonds
It is in combination；Not only the requirement to lattice match reduces, but also is easy to remove semiconductor epitaxial layers and two-dimensional material, realizes
The recycling of substrate.If the semiconductor epitaxial layers under removing are transferred on flexible material, it is also applied to wearable
Equal fields.Currently, people attempt to grow the semiconductor materials such as GaN, GaAs in the two-dimensional materials such as graphene.However, due to stone
Black alkene surface does not have a dangling bonds, and surface can be very low, the atomic adsorption for depositing to its surface is poor, migration fastly, it is weak in conjunction with substrate,
Cause nucleation difficult.Even if promoting nucleation by reducing the methods of growth temperature, also because three-dimensional island growth pattern formation is more
Epitaxial can not obtain the semiconductor material of device grade quality.
Utility model content
Purpose of utility model: the utility model aims at the problems existing in the prior art, and provides one kind for growing semiconductor
Two or more two-dimensional material is superimposed by the substrat structure of material, the structure, changes the wink of two-dimensional material
When electric dipole moment, thus increase two-dimensional material surface can, promote deposition and atomic in surface nucleation, can be obtained in growth
High quality semiconductor material.The limitation to semiconductor material lattice size is reduced using the substrate, and half can deposited
Directly it is stripped down from substrate after conductor material, is transferred to flexible material, prepares flexible semiconductor device, under removing
Substrate can also reuse.
Technical solution: the substrat structure of semiconductor material growing described in the utility model includes being sequentially overlapped from the bottom to top
The first two-dimensional material layer, the second two-dimensional material layer, third two-dimensional material layer and the 4th two-dimensional material layer.
Further, the first two-dimensional material layer, third two-dimensional material layer are formed for same material, preferably six sides
Boron nitride.
Further, the second two-dimensional material layer, the 4th two-dimensional material layer are formed for same material, preferably graphite
Alkene, and it is different from the first two-dimensional material layer, third two-dimensional material layer material.
Further, the material of the second two-dimensional material layer, third two-dimensional material layer and the 4th two-dimensional material layer is single
Any one of atom, diatomic and three atom two-dimensional materials.
The utility model has the following beneficial effects:
(1) the utility model reduces the requirement to semiconductor material and substrate lattice matching degree, more to grow
Semiconductor material provide technical solution.
(1) semiconductor material grown on the utility model substrate is easy to be transferred on flexible material from substrate desquamation, makes
Standby semiconductor devices carrying portable out and flexible use.
(2) the lower two-dimensional material of removing is can be recycled, material required for the semiconductor devices such as reduction solar cell at
This, the large-scale application for semiconductor devices such as solar cells provides reliable scheme and technology guarantees.
Detailed description of the invention
The structure chart of one embodiment semiconductor material growing substrate of Fig. 1 the utility model.
Specific embodiment
Embodiment 1
Present embodiments provide it is a kind of for growing the substrat structure of semiconductor material, as shown in Figure 1, include from the bottom to top
The first two-dimensional material layer 10, the second two-dimensional material layer 11, third two-dimensional material layer 12 and the 4th two-dimensional material layer being sequentially overlapped
13.First two-dimensional material layer, 10 material is hexagonal boron nitride, and the second, the 4th two-dimensional material layer 11,13 is monoatomic layer graphene,
Third two-dimensional material layer 12 is monoatomic layer hexagonal boron nitride.Wherein, the second two-dimensional material layer 11 may be replaced by diatomic
Layer graphene or three atomic layer graphenes；Third two-dimensional material layer 12 may be replaced by diatomic layer hexagonal boron nitride or three originals
Sublayer hexagonal boron nitride；4th two-dimensional material layer 13 may be replaced by diatomic layer graphene or three atomic layer graphenes.
In addition, this structure can also include more two-dimensional material layers, according to one layer of hexagonal boron nitride, one layer of graphene is successively
Increase upwards.The semiconductor materials such as GaN can be grown on the substrate of formation.
Embodiment 2
Present embodiments provide it is another for growing the substrat structure of semiconductor material, as shown in Figure 1, include by down toward
On the first two-dimensional material layer 10, the second two-dimensional material layer 11, third two-dimensional material layer 12 and the 4th two-dimensional material that are sequentially overlapped
Layer 13.First two-dimensional material layer, 10 material is hexagonal boron nitride, and the second, the 4th two-dimensional material layer 11,13 is monoatomic layer phosphorus alkene,
Third two-dimensional material layer 12 is monoatomic layer hexagonal boron nitride.Wherein, the second two-dimensional material layer 11 may be replaced by diatomic
Layer phosphorus alkene or three atomic layer phosphorus alkene；Third two-dimensional material layer 12 may be replaced by diatomic layer hexagonal boron nitride or three atomic layers
Hexagonal boron nitride；4th two-dimensional material layer 13 may be replaced by diatomic layer phosphorus alkene or three atomic layer phosphorus alkene.
In addition, this structure can also include more two-dimensional material layers, according to one layer of hexagonal boron nitride, one layer of phosphorus alkene successively to
Upper increase.The semiconductor materials such as GaAs can be grown on the substrate of formation.
The utility model is superimposed by different two-dimensional materials, changes the instantaneous electric dipole moment of two-dimensional material, thus
The surface energy for increasing two-dimensional material, promotes deposition and atomic in surface nucleation, obtains high quality semiconductor device material.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this
Within the spirit and principle of utility model, any modification, equivalent substitution, improvement and etc. done should be included in the utility model
Within the scope of protection.
Claims (6)
1. a kind of for growing the substrat structure of semiconductor material, it is characterised in that: including be sequentially overlapped from the bottom to top first
Two-dimensional material layer, the second two-dimensional material layer, third two-dimensional material layer and the 4th two-dimensional material layer.
2. according to claim 1 for growing the substrat structure of semiconductor material, it is characterised in that: first two dimension
Material layer, third two-dimensional material layer are formed for same material.
3. according to claim 1 for growing the substrat structure of semiconductor material, it is characterised in that: second two dimension
Material layer, the 4th two-dimensional material layer are formed for same material, and not with the first two-dimensional material layer, third two-dimensional material layer material
Together.
4. according to claim 1 for growing the substrat structure of semiconductor material, it is characterised in that: second two dimension
The material of material layer, third two-dimensional material layer and the 4th two-dimensional material layer be monatomic two-dimensional material, diatomic two-dimensional material and
Any one of three atom two-dimensional materials.
5. according to claim 2 for growing the substrat structure of semiconductor material, it is characterised in that: first two dimension
Material layer, third two-dimensional material layer are specially hexagonal boron.
6. according to claim 3 for growing the substrat structure of semiconductor material, it is characterised in that: second two dimension
Material layer, the 4th two-dimensional material layer are specially graphene layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820613411.1U CN208256686U (en) | 2018-04-27 | 2018-04-27 | It is a kind of for growing the substrat structure of semiconductor material |
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| CN201820613411.1U CN208256686U (en) | 2018-04-27 | 2018-04-27 | It is a kind of for growing the substrat structure of semiconductor material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110729182A (en) * | 2019-10-08 | 2020-01-24 | 苏州纳维科技有限公司 | Preparation method and growth structure of high-quality self-supporting nitride substrate |
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2018
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110729182A (en) * | 2019-10-08 | 2020-01-24 | 苏州纳维科技有限公司 | Preparation method and growth structure of high-quality self-supporting nitride substrate |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181218 Termination date: 20200427 |