CN208241569U - The circuit quickly released is opened and powered off to a kind of powered on based on metal-oxide-semiconductor realization slow - Google Patents
The circuit quickly released is opened and powered off to a kind of powered on based on metal-oxide-semiconductor realization slow Download PDFInfo
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- CN208241569U CN208241569U CN201820885872.4U CN201820885872U CN208241569U CN 208241569 U CN208241569 U CN 208241569U CN 201820885872 U CN201820885872 U CN 201820885872U CN 208241569 U CN208241569 U CN 208241569U
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Abstract
The utility model discloses a kind of powered on based on metal-oxide-semiconductor realization slow to open and power off the circuit quickly released, the output end of the voltage-stablizer is connect with the drain electrode of the first metal-oxide-semiconductor, the grid of first metal-oxide-semiconductor is connect with the drain electrode of the second metal-oxide-semiconductor, the grid of second metal-oxide-semiconductor is connect by the 6th resistance with control signal input, the grid of first metal-oxide-semiconductor is also connect with the grid of third metal-oxide-semiconductor, and the drain electrode of the third metal-oxide-semiconductor is connect by the source electrode of the connection of the output end of 3rd resistor and voltage-stablizer and third metal-oxide-semiconductor with ground wire；The 6th resistance both ends parallel connection first diode, the anode of the first diode is connect with the grid of the second metal-oxide-semiconductor, the source electrode of second metal-oxide-semiconductor passes through the 5th resistance respectively and the 6th capacitor is connect with the grid of the second metal-oxide-semiconductor, forms delay control circuit.The utility model powers on to delay and opens and power off the circuit quickly released by voltage-stablizer and three metal-oxide-semiconductor formation, can effectively improve product quality, reduce failure rate and overall cost.
Description
Technical field
The utility model relates to power switch fields, more particularly to one kind to power on to delay based on metal-oxide-semiconductor realization and open and power off fastly
The circuit that speed is released.
Background technique
MOS is the abbreviation of MOSFET.MOSFET Metal-Oxide Semiconductor field effect transistor, abbreviation OH
Transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET).It is supplied in light current plate grade
In electric system, metal-oxide-semiconductor is used frequently as the power supply of a certain functional circuit with its convenient control mode and excellent conduction property
Switch；However it is directed to the design of MOS switch circuit, usually metal-oxide-semiconductor grid (pole G) is controlled simply by MCU.
And in actual conditions, if MOS switch back-end circuit is capacitive load, for example back-end circuit has biggish filtered electrical
Hold, if simply the control pole G powers at this time, will lead to sizable dash current, this dash current can drag down system electricity moment
It presses and system is caused operation irregularity occur, also may cause switching tube overcurrent damage and EMC problem.
A kind of to be readily apparent that, simple solution is to increase metal-oxide-semiconductor G electrode resistance, slows down the rising of metal-oxide-semiconductor G pole tension
Rate, to increase metal-oxide-semiconductor in switching process from by the end of fully on transit time, realizing slow opens；The method is true
Power-on time can effectively be extended in fact, but this can make metal-oxide-semiconductor be in transition region overlong time, and this transition region often have it is biggish
Voltage difference will bear biggish dissipated power in the slow section that opens so as to cause metal-oxide-semiconductor, and extreme case will damage metal-oxide-semiconductor.In addition,
If some capacitive systems power on after a loss of power at once, will lead to cannot normally restart and lead to failure, this is because electricity after power-off
Electricity capacity release in time to restart voltage hereinafter, power on again at this time will be unable to triggering restart.So existing control MOS
It the mode of switch or does not release to the electricity after power-off and carries out any control, only simple cutting power supply or only
Fixed bleeder resistance is simply just introduced between rear level power supply and ground, no matter powers on or lower electricity, this resistance are intended to consumption energy
Amount.So needing a kind of to can be realized that controllable load powers on and the circuit that electricity can be accelerated after a loss of power to release is set at this stage
Meter the needs of to meet fast powering-up and power-off, and will not bring additional energy loss, to improve product quality, reduce
Failure rate and overall cost.
Utility model content
The purpose of this utility model be to provide it is a kind of based on metal-oxide-semiconductor realization power on it is slow open and power off the circuit quickly released,
Product quality can be effectively improved, failure rate and overall cost are reduced.
To realize the purpose, provide it is a kind of based on metal-oxide-semiconductor realization power on it is slow open and power off the circuit quickly released, including
For control signal input connected to the controller, for be connected with external power source power input, respectively with control believe
The voltage-stablizer that number input terminal is connected with power input, the output end of the voltage-stablizer is connect with the drain electrode of the first metal-oxide-semiconductor, described
The source electrode of first metal-oxide-semiconductor is connect with power input and the grid of the first metal-oxide-semiconductor is connect with the drain electrode of the second metal-oxide-semiconductor, described
The source electrode of second metal-oxide-semiconductor is connect with ground wire and the grid of the second metal-oxide-semiconductor is connect by the 6th resistance with control signal input,
The grid of first metal-oxide-semiconductor by the 7th resistance connect with power input and the grid of the first metal-oxide-semiconductor also with the 3rd MOS
The grid of pipe connects, and the drain electrode of the third metal-oxide-semiconductor passes through the connection of the output end of 3rd resistor and voltage-stablizer and third metal-oxide-semiconductor
Source electrode connect with ground wire, the source electrode of the third metal-oxide-semiconductor also passes through the 4th resistance and connect connection with the grid of third metal-oxide-semiconductor；
The anode of the 6th resistance both ends parallel connection first diode, the first diode is connect with the grid of the second metal-oxide-semiconductor, described
The source electrode of second metal-oxide-semiconductor passes through the 5th resistance respectively and the 6th capacitor is connect with the grid of the second metal-oxide-semiconductor, forms delay control
Circuit processed；The output end of the voltage-stablizer passes sequentially through second resistance and first resistor is connect with ground wire, the voltage-stablizer can
End and the connecting pin of second resistance and first resistor is adjusted to be attached.
Preferably, the power input passes through the second capacitor respectively and third capacitor is connect with ground wire, the voltage-stablizer
Output end pass through the 4th capacitor respectively and the 5th capacitor is connect with ground wire.
Preferably, second capacitor, the 4th capacitor and the 5th capacitor are 10uF, and third capacitor is 0.1uF.
Preferably, the 6th resistance is 50-150K Ω, and the 6th capacitor is 0.05-0.2uF, and the 5th resistance is 1M Ω.
Preferably, the power input passes through the connection of the power end of current-limiting resistance and voltage-stablizer and current-limiting resistance and electricity
The connecting pin of source input terminal is connect by first capacitor with ground wire.
Preferably, the 3rd resistor is 100-150 Ω.
Preferably, the first resistor is 7.68K Ω, and second resistance is 24K Ω.
Preferably, the first diode is double diode.
The utility model compared with prior art, the beneficial effect is that:
The utility model powers on to delay and opens and power off the circuit quickly released by voltage-stablizer and three metal-oxide-semiconductor formation, can
It is effective to improve product quality, reduce failure rate and overall cost.It can reduce design cost and product by the utility model
Cost improves product reliability, so as to improve electromagnetic compatibility characteristic.The utility model passes through can be to the 6th resistance and the 6th electricity
Hold when power on delay is realized in adjustment and control, and can be released the time by the adjustment to 3rd resistor to adjust power-off, thus
Meet specific actual use needs.The utility model is by setting current-limiting resistance so as to strict control powered on moment pressure stabilizing
The maximum value of device dash current, to meet the need of work of voltage-stablizer.
Detailed description of the invention
Fig. 1 is the circuit diagram of the utility model.
Specific embodiment
Below with reference to embodiment, the utility model will be further described, but does not constitute to any of the utility model
Limitation, the modification of any limited times made in the utility model claims range, still in the claim of the utility model
In range.
As shown in Figure 1, the utility model, which provides a kind of power on based on metal-oxide-semiconductor realization, slow opens and powers off the electricity quickly released
Road, including it is used for control signal input Vin-EN connected to the controller, for being connected with external power source power input
Vin, the voltage-stablizer U2 being connect respectively with control signal input Vin-EN and power input Vin, the output end of voltage-stablizer U2
It is connect with the drain electrode of the first metal-oxide-semiconductor Q1, the source electrode of the first metal-oxide-semiconductor Q1 is connect with power input Vin and the first metal-oxide-semiconductor Q1
Grid is connect with the drain electrode of the second metal-oxide-semiconductor Q2, and the source electrode of the second metal-oxide-semiconductor Q2 is connect with ground wire and the grid of the second metal-oxide-semiconductor Q2
It is connect by the 6th resistance R6 with control signal input Vin-EN, the grid of the first metal-oxide-semiconductor Q1 passes through the 7th resistance R7 and electricity
The grid of source input terminal Vin connection and the first metal-oxide-semiconductor Q1 are also connect with the grid of third metal-oxide-semiconductor Q3, the leakage of third metal-oxide-semiconductor Q3
Pole is connect by 3rd resistor R3 with the output end of voltage-stablizer U2 and the source electrode of third metal-oxide-semiconductor Q3 is connect with ground wire, the 3rd MOS
The source electrode of pipe Q3 also passes through the 4th resistance R4 and connect connection with the grid of third metal-oxide-semiconductor Q3；6th resistance R6 both ends parallel connection first
The anode of diode D1, first diode D1 are connect with the grid of the second metal-oxide-semiconductor Q2, and the source electrode of the second metal-oxide-semiconductor Q2 passes through respectively
5th resistance R5 and the 6th capacitor C6 are connect with the grid of the second metal-oxide-semiconductor Q2, form delay control circuit；The output of voltage-stablizer U2
End passes sequentially through second resistance R2 and first resistor R1 is connect with ground wire, the adjustable end of voltage-stablizer U2 and second resistance R2 and first
The connecting pin of resistance R1 is attached.Power input Vin passes through the second capacitor C2 respectively and third capacitor C3 is connect with ground wire,
The output end of voltage-stablizer U2 passes through the 4th capacitor C4 respectively and the 5th capacitor C5 is connect with ground wire.Second capacitor C2, the 4th capacitor
C4 and the 5th capacitor C5 is 10uF, and third capacitor C3 is 0.1uF.
6th resistance R6 is 50-150K Ω, and the 6th capacitor C6 is 0.05-0.2uF, and the 5th resistance R5 is 1M Ω.Third electricity
Resistance R3 is 100-150 Ω.According to actually power on it is slow open needs, the 6th resistance R6 can for 50K Ω or 60K Ω or 80K Ω or
100K Ω or 120K Ω or 150K Ω；6th capacitor C6 can for 0.05uF or 0.07uF or 0.8uF or 0.1uF or 0.12uF or
0.15uF.Quickly released needs according to practical power-off, 3rd resistor R3 can for 100 Ω or 110 Ω or 120 Ω or 130 Ω or
140 Ω or 150 Ω.
The ground terminal of voltage-stablizer U2 is connect with ground wire, and power input Vin passes through the electricity of current-limiting resistance R8 and voltage-stablizer U2
Source connects and current-limiting resistance R8 is connect by first capacitor C1 with ground wire with the connecting pin of power input Vin.Current limliting electricity
The resistance value of resistance R8 select according to voltage-stablizer U2, so as to strict control powered on moment voltage-stablizer U2 dash current
Maximum value, to meet voltage-stablizer U2 need of work.First capacitor C1 is 0.1uF.First resistor R1 be 7.68K Ω, second
Resistance R2 is 24K Ω.4th resistance R4 is 11M Ω, and the 7th resistance R7 is 10K Ω, and first diode D1 is double diode.At this
In embodiment, voltage-stablizer U2 is that low pressure difference linear voltage regulator powers in advance for circuit, and voltage is set as 3.3V.External power supply can be with
For 3.8V.
In the present embodiment, when being powered on, the signal of controller is inputted by control signal input Vin-EN, surely
Depressor U2 circuit carries out pre- upper electricity output 3.3V voltage and the output end vo ut of this circuit is made to export 3.3V voltage；6th resistance R6
After being delayed with the RC circuit of the 6th capacitor C6 composition, the second metal-oxide-semiconductor Q2 is connected so that the first metal-oxide-semiconductor Q1 is connected, to make
The output end vo ut of this circuit boosts to 3.8V, meanwhile, the second metal-oxide-semiconductor Q2 is connected so that third metal-oxide-semiconductor Q3 is disconnected, so that the
Three resistance R3 disconnection will not consume energy.When being powered off, the signal of controller is defeated by control signal input Vin-EN
Enter, so that voltage-stablizer U2 stops working immediately, the second metal-oxide-semiconductor Q2 is quickly disconnected under the action of first diode D1, to make
The first metal-oxide-semiconductor Q1 disconnect so that this circuit output end vo ut stop 3.8V power supply, the second metal-oxide-semiconductor Q2 disconnect so that
Third metal-oxide-semiconductor Q3 conducting, so that 3rd resistor R3 conducting is discharged, so that speed-up capacitor electricity is released.
Above are merely preferred embodiments of the utility model, it should be pointed out that for those skilled in the art,
Under the premise of not departing from the utility model structure, several modifications and improvements can also be made, it is practical new that these all will not influence this
The effect and patent practicability that type is implemented.
Claims (8)
1. the circuit quickly released is opened and power off to a kind of powered on based on metal-oxide-semiconductor realization slow, it is characterised in that: including being used for and control
Device connection control signal input (Vin-EN), for be connected with external power source power input (Vin), respectively with control
Signal input part (Vin-EN) and power input (Vin) connection voltage-stablizer (U2), the output end of the voltage-stablizer (U2) with
The drain electrode of first metal-oxide-semiconductor (Q1) connects, and the source electrode of first metal-oxide-semiconductor (Q1) is connect and first with power input (Vin)
The grid of metal-oxide-semiconductor (Q1) is connect with the drain electrode of the second metal-oxide-semiconductor (Q2), and the source electrode of second metal-oxide-semiconductor (Q2) is connect simultaneously with ground wire
And second the grid of metal-oxide-semiconductor (Q2) connect with control signal input (Vin-EN) by the 6th resistance (R6), the first MOS
Pipe (Q1) grid by the 7th resistance (R7) connect with power input (Vin) and the grid of the first metal-oxide-semiconductor (Q1) also with
The grid of third metal-oxide-semiconductor (Q3) connects, and the drain electrode of the third metal-oxide-semiconductor (Q3) passes through 3rd resistor (R3) and voltage-stablizer (U2)
The source electrode of output end connection and third metal-oxide-semiconductor (Q3) is connect with ground wire, and the source electrode of the third metal-oxide-semiconductor (Q3) also passes through the 4th
Resistance (R4) connect connection with the grid of third metal-oxide-semiconductor (Q3)；6th resistance (R6) the both ends parallel connection first diode (D1),
The anode of the first diode (D1) is connect with the grid of the second metal-oxide-semiconductor (Q2), the source electrode difference of second metal-oxide-semiconductor (Q2)
It is connect by the 5th resistance (R5) and the 6th capacitor (C6) with the grid of the second metal-oxide-semiconductor (Q2), forms delay control circuit；It is described
The output end of voltage-stablizer (U2) passes sequentially through second resistance (R2) and first resistor (R1) is connect with ground wire, the voltage-stablizer (U2)
Adjustable end and the connecting pin of second resistance (R2) and first resistor (R1) be attached.
2. the circuit quickly released, feature are opened and powered off to a kind of powered on based on metal-oxide-semiconductor realization according to claim 1 slow
Be: the power input (Vin) is connect by the second capacitor (C2) and third capacitor (C3) with ground wire respectively, the pressure stabilizing
The output end of device (U2) passes through the 4th capacitor (C4) respectively and the 5th capacitor (C5) is connect with ground wire.
3. the circuit quickly released, feature are opened and powered off to a kind of powered on based on metal-oxide-semiconductor realization according to claim 2 slow
Be: second capacitor (C2), the 4th capacitor (C4) and the 5th capacitor (C5) are 10uF, and third capacitor (C3) is 0.1uF.
4. the circuit quickly released, feature are opened and powered off to a kind of powered on based on metal-oxide-semiconductor realization according to claim 1 slow
Be: the 6th resistance (R6) is 50-150K Ω, and the 6th capacitor (C6) is 0.05-0.2uF, and the 5th resistance (R5) is 1M Ω.
5. the circuit quickly released, feature are opened and powered off to a kind of powered on based on metal-oxide-semiconductor realization according to claim 1 slow
Be: the power input (Vin) is connect by current-limiting resistance (R8) with the power end of voltage-stablizer (U2) and current-limiting resistance
(R8) it is connect by first capacitor (C1) with ground wire with the connecting pin of power input (Vin).
6. the circuit quickly released, feature are opened and powered off to a kind of powered on based on metal-oxide-semiconductor realization according to claim 1 slow
Be: the 3rd resistor (R3) is 100-150 Ω.
7. the circuit quickly released, feature are opened and powered off to a kind of powered on based on metal-oxide-semiconductor realization according to claim 1 slow
Be: the first resistor (R1) is 7.68K Ω, and second resistance (R2) is 24K Ω.
8. the circuit quickly released, feature are opened and powered off to a kind of powered on based on metal-oxide-semiconductor realization according to claim 1 slow
Be: the first diode (D1) is double diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820885872.4U CN208241569U (en) | 2018-06-08 | 2018-06-08 | The circuit quickly released is opened and powered off to a kind of powered on based on metal-oxide-semiconductor realization slow |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820885872.4U CN208241569U (en) | 2018-06-08 | 2018-06-08 | The circuit quickly released is opened and powered off to a kind of powered on based on metal-oxide-semiconductor realization slow |
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| Publication Number | Publication Date |
|---|---|
| CN208241569U true CN208241569U (en) | 2018-12-14 |
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| CN201820885872.4U Active CN208241569U (en) | 2018-06-08 | 2018-06-08 | The circuit quickly released is opened and powered off to a kind of powered on based on metal-oxide-semiconductor realization slow |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110768593A (en) * | 2019-08-27 | 2020-02-07 | 梁玉泉 | Single-phase brushless motor controller |
| CN113793491A (en) * | 2021-10-12 | 2021-12-14 | 惠州市博实结科技有限公司 | Key control circuit and remote controller |
| CN114285477A (en) * | 2021-12-17 | 2022-04-05 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN115940696A (en) * | 2023-01-04 | 2023-04-07 | 深圳博英特科技有限公司 | Brake control circuit and electrical appliance applying same |
-
2018
- 2018-06-08 CN CN201820885872.4U patent/CN208241569U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110768593A (en) * | 2019-08-27 | 2020-02-07 | 梁玉泉 | Single-phase brushless motor controller |
| CN113793491A (en) * | 2021-10-12 | 2021-12-14 | 惠州市博实结科技有限公司 | Key control circuit and remote controller |
| CN114285477A (en) * | 2021-12-17 | 2022-04-05 | 青岛海信宽带多媒体技术有限公司 | Optical module |
| CN115940696A (en) * | 2023-01-04 | 2023-04-07 | 深圳博英特科技有限公司 | Brake control circuit and electrical appliance applying same |
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Circuit based on last electricity of MOS pipe realization slowly opens releases with cutting off power supply fast Effective date of registration: 20191028 Granted publication date: 20181214 Pledgee: China Co truction Bank Corp Guangzhou branch Pledgor: Guangzhou Lu bangtong Networking Technology Co. Ltd. Registration number: Y2019440000153 |
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| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 511356 Room 501, building 2, No. 63, Yong'an Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Guangzhou lubangtong Internet of things Technology Co.,Ltd. Address before: 510653 3rd floor, building F, kehuiyuan, 95 Daguan Road, Tianhe District, Guangzhou City, Guangdong Province Patentee before: GUANGZHOU ROBUSTEL TECHNOLOGIES Co.,Ltd. |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20220209 Granted publication date: 20181214 Pledgee: China Co. truction Bank Corp Guangzhou branch Pledgor: GUANGZHOU ROBUSTEL TECHNOLOGIES Co.,Ltd. Registration number: Y2019440000153 |