CN208221094U - A kind of device for improving area and melting vacuum pump utilization rate - Google Patents
A kind of device for improving area and melting vacuum pump utilization rate Download PDFInfo
- Publication number
- CN208221094U CN208221094U CN201820527059.XU CN201820527059U CN208221094U CN 208221094 U CN208221094 U CN 208221094U CN 201820527059 U CN201820527059 U CN 201820527059U CN 208221094 U CN208221094 U CN 208221094U
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- Prior art keywords
- vacuum pump
- pipeline
- pump
- utilization rate
- vacuum
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- 238000002844 melting Methods 0.000 title claims abstract description 11
- 230000008018 melting Effects 0.000 title claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 239000004577 thatch Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 9
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201820527059.XU CN208221094U (en) | 2018-04-13 | 2018-04-13 | A kind of device for improving area and melting vacuum pump utilization rate |
Applications Claiming Priority (1)
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CN201820527059.XU CN208221094U (en) | 2018-04-13 | 2018-04-13 | A kind of device for improving area and melting vacuum pump utilization rate |
Publications (1)
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CN208221094U true CN208221094U (en) | 2018-12-11 |
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CN201820527059.XU Active CN208221094U (en) | 2018-04-13 | 2018-04-13 | A kind of device for improving area and melting vacuum pump utilization rate |
Country Status (1)
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CN (1) | CN208221094U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108425846A (en) * | 2018-04-13 | 2018-08-21 | 天津中环领先材料技术有限公司 | A kind of device and method for improving area and melting vacuum pump utilization rate |
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2018
- 2018-04-13 CN CN201820527059.XU patent/CN208221094U/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108425846A (en) * | 2018-04-13 | 2018-08-21 | 天津中环领先材料技术有限公司 | A kind of device and method for improving area and melting vacuum pump utilization rate |
CN108425846B (en) * | 2018-04-13 | 2023-09-05 | 天津中环领先材料技术有限公司 | Device and method for improving utilization rate of zone-melting vacuum pump |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191225 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring road No. 12 in Haitai) Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |