CN208157416U - The GaN HEMT device that conducting resistance improves operational reliability can be reduced - Google Patents
The GaN HEMT device that conducting resistance improves operational reliability can be reduced Download PDFInfo
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- CN208157416U CN208157416U CN201820677932.3U CN201820677932U CN208157416U CN 208157416 U CN208157416 U CN 208157416U CN 201820677932 U CN201820677932 U CN 201820677932U CN 208157416 U CN208157416 U CN 208157416U
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Abstract
The utility model discloses a kind of GaN HEMT device that can be reduced conducting resistance and improve operational reliability, unlike the prior art InxAlyGa1‑x‑yN barrier layer is made of multiple rings of matrix arrangement, is the source electrode being covered on channel layer on the outside of ring, is the drain electrode being covered on channel layer on the inside of ring, in InxAlyGa1‑x‑yThere is first medium passivation layer on N barrier layer, source electrode and drain electrode, the gate electrode is to be located on first medium passivation layer and be placed in the annular between source electrode and drain electrode, and the lower part of gate electrode passes through first medium passivation layer to InxAlyGa1‑x‑yN potential barrier layer surface, second medium passivation layer is covered in the upper surface of the first medium passivation layer and gate electrode, there is the through-hole across first medium passivation layer and second medium passivation layer on the drain electrode, has expansion electrode in through-hole and on second medium passivation layer.
Description
Technical field
Conducting resistance, which can be reduced, the utility model relates to a kind of GaN HEMT device, especially one kind improves operational reliability
GaN HEMT device.
Background technique
As after first generation semiconductor silicon（Si）With second generation Semiconductor GaAs（GaAs）Third generation semiconductor later
Material representative-gallium nitride（GaN）With unique material property：Broad stopband, high temperature resistant, high electron concentration, high electron mobility
Rate, high-termal conductivity etc., GaN base high electron mobility transistor（HEMT）It is widely used to microwave communication and power electronics conversion
Equal fields.The conducting resistance of GaN HEMT device is the key index for influencing device performance, such as the electric conduction of GaN HEMT device
Resistance is big, and output power density reduction is presented as in radio-frequency devices, be presented as in power electronic devices conduction loss increase from
And power supply conversion efficiency is influenced, simultaneously turn on resistance greatly and will lead to that device heating amount is big, and increasing heat dissipation cost even influences device
Reliability, people are dedicated to reducing device on-resistance thus.
GaN HEMT device is followed successively by substrate from the bottom to top（Silicon, sapphire, silicon carbide etc.）,AlxGa1-xN buffer layer, GaN
Or In GaN channel layer, there is In on channel layerxAlyGa1-x-yN barrier layer（There can be the covering of GaN or SiN cap layers thereon）, source electricity
Pole and drain electrode, in InxAlyGa1-x-yThere is dielectric passivation layer on N barrier layer, gate electrode is equipped in dielectric passivation layer（Grid itself
With gate electrode field plate that may be present）, the lower part of gate electrode passes through dielectric passivation and is placed on InxAlyGa1-x-yOn N barrier layer.By
In tri-nitride InxAlyGa1-x-yN material system have very strong polarity effect, polarization coefficient with Al component raising
And increase, InxAlyGa1-x-yTwo-dimensional electron gas in N/GaN interface-channel（2DEG）Concentration also increases with the raising of polarization intensity
Greatly, when epitaxial structure is fixed, the concentration of 2DEG directly affects the extension conducting resistance of GaN HEMT device.Existing GaN
HEMT device source electrode and drain electrode use the structure of " two combs are to slotting " formula, to extend grid length to greatest extent, but by device
The limitation of the conditions such as size and pressure resistance, unit area grid length have tended to the limit, can not further decrease extension conducting resistance.Due to
The increase of gate length, the source electrode and drain electrode length of the usual 2 ~ 8um of thickness is then more than 100mm, it is clear that increases metal electrode
Conducting resistance（At least close to the 20% of GaN HEMT device all-in resistance）.In addition, the electrode structure of existing GaN HEMT device causes
Middle linear position and angular position field distribution are inconsistent, and corner easily punctures；And the electricity in source electrode and drain electrode everywhere
Flow distribution is also uneven, and strip end resistance dramatically increases, and reduces device reliability of operation.
Summary of the invention
The utility model is to solve above-mentioned technical problem present in the prior art, and electric conduction can be reduced by providing one kind
Resistance improves the GaN HEMT device of operational reliability.
The technical solution of the utility model is：A kind of GaN HEMT for reducing conducting resistance and improving operational reliability
Device is followed successively by substrate, buffer layer, channel layer from the bottom to top, there is In on channel layerxAlyGa1-x-yN barrier layer, source electrode,
Drain electrode and gate electrode, the InxAlyGa1-x-yN barrier layer is made of multiple rings of matrix arrangement, is covering on the outside of ring
It is the drain electrode being covered on channel layer on the inside of the source electrode on channel layer, ring, in InxAlyGa1-x-yN barrier layer, source electricity
There is first medium passivation layer on pole and drain electrode, the gate electrode is to be located on first medium passivation layer and be placed in source electrode and leakage
Annular between electrode, the lower part of gate electrode pass through first medium passivation layer to InxAlyGa1-x-yN potential barrier layer surface, described
The upper surface of first medium passivation layer and gate electrode is covered with second medium passivation layer, has on the drain electrode across first medium
The through-hole of passivation layer and second medium passivation layer has expansion electrode in through-hole and on second medium passivation layer.
Another solution of the utility model is by source electrode and drain electrode location swap.
The utility model increases the length of grid in unit area by whole face hole shape distribution of electrodes, reduces epitaxial electric resistance,
Source electrode and drain metal area are increased simultaneously, are improved metal layout, are reduced metal conduction resistance.Compared with prior art,
The utility model reduces epitaxial electric resistance about 30%, metal conduction resistance about 65% is reduced, to realize the total electric conduction of device
Resistance reduces about 37%.In addition the utility model guarantee each position electric field it is consistent, there is no the weak spot of field distribution, avoid because
Punch-through caused by field distribution is uneven, and each position current distribution is more uniform, heat distribution is more reasonable, improves
Device operational reliability.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model embodiment 1.
Fig. 2 is the A-A view of Fig. 1.
Fig. 3 is the structural schematic diagram of the utility model embodiment 2.
Fig. 4 is the structural schematic diagram of the utility model embodiment 3.
Fig. 5 is that conducting resistance reduces ratio schematic diagram to the utility model embodiment 1 compared with prior art.
Specific embodiment
Embodiment 1：
The GaN HEMT device for reducing conducting resistance raising operational reliability of the utility model is as shown in Figure 1 and Figure 2：
It is same as the prior art to be followed successively by substrate 1, buffer layer 2, GaN channel layer 3 from the bottom to top, there is Al on channel layer 30.3Ga0.7N gesture
Barrier layer 4, source electrode 5 and drain electrode 6, with the prior art except that the Al0.3Ga0.7N barrier layer 4 is by the more of matrix arrangement
A ring composition, can be circular rings, the regular shapes such as Q-RING also can be used, be to be covered in channel on the outside of ring as shown in Figure 1
Source electrode 5 on layer 3 is the drain electrode 6 being covered on channel layer 3 on the inside of ring, in Al0.3Ga0.7N barrier layer 4, source electrode 5
And having first medium passivation layer 21 on drain electrode 6, the gate electrode 7 is to be located on first medium passivation layer 21 and be placed in source electrode
Annular between 5 and drain electrode 6, the lower part of gate electrode 7 pass through first medium passivation layer 21 to Al0.3Ga0.74 surface of N barrier layer,
It is covered with second medium passivation layer 22 in the upper surface of the first medium passivation layer 21 and gate electrode 7, is had on the drain electrode 6
Across first medium passivation layer 21 and the through-hole of second medium passivation layer 22, there is expansion in through-hole and on second medium passivation layer 22
Open up electrode 23.
The isolated area of the utility model embodiment 1, substrate 1, buffer layer 2, channel layer 3, Al0.3Ga0.7N barrier layer 4, source electricity
The preparation method of pole 5, drain electrode 6 and gate electrode 7 is same as the prior art, first medium passivation layer 21 and second medium passivation layer
22 preparation method compared with technology dielectric passivation layer, i.e., by the method for PECVD or ALD grow SiN, Al2O3 or other
High-k dielectric layer, the preparation method of the preparation method of drain electrode expansion electrode 23 compared with technology drain electrode.
By 1 obtained device of the utility model embodiment and existing device GaN HEMT device this reality in identity unit area
It is reduced with the epitaxial electric resistance of new embodiment 1, metal conduction resistance and the total conducting resistance of device, reduces ratio such as Fig. 5 institute
Show.As seen from Figure 5, the utility model embodiment 1 reduces epitaxial electric resistance about 30%, reduces metal conduction resistance about 65%, from
And realizing the total conducting resistance of device reduces about 37%.
Embodiment 2：
The basic structure of embodiment 2 is with embodiment 1, with embodiment 1 except that such as Fig. 3 institute of drain electrode expansion electrode 23
Show, is the strip structure for connecting each drain electrode 6.
The preparation method is the same as that of Example 1.
Embodiment 3：
The basic structure of embodiment 3 is with embodiment 1, but 6 location swap of source electrode 5 and drain electrode, specific structure such as Fig. 4 institute
Show.I.e. with the prior art except that Al0.3Ga0.7N barrier layer 4 is made of multiple rings of matrix arrangement, is to cover on the outside of ring
The drain electrode 6 being placed on channel layer 3 is the source electrode 5 being covered on channel layer 3 on the inside of ring, in Al0.3Ga0.7N barrier layer 4,
There is first medium passivation layer 21 in source electrode 5 and drain electrode 6, the gate electrode 7 is to be located on first medium passivation layer 21 and set
Annular between source electrode 5 and drain electrode 6, the lower part of gate electrode 7 pass through first medium passivation layer 21 to Al0.3Ga0.7N potential barrier
4 surface of layer, are covered with second medium passivation layer 22 in the upper surface of the first medium passivation layer 21 and gate electrode 7, in the source
There is the through-hole across first medium passivation layer 21 and second medium passivation layer 22 on electrode 5, in through-hole and second medium is passivated
There is expansion electrode 23 on layer 22.
Claims (1)
1. one kind can reduce the GaN HEMT device that conducting resistance improves operational reliability, it is followed successively by substrate from the bottom to top（1）, it is slow
Rush layer（2）, channel layer（3）, in channel layer（3）On have InxAlyGa1-x-yN barrier layer（4）, source electrode（5）, drain electrode（6）With
And gate electrode（7）, it is characterised in that：The InxAlyGa1-x-yN barrier layer（4）It is made of multiple rings of matrix arrangement, outside ring
Side is to be covered in channel layer（3）On source electrode（5）, it is to be covered in channel layer on the inside of ring（3）On drain electrode（6）,
InxAlyGa1-x-yN barrier layer（4）, source electrode（5）And drain electrode（6）On have first medium passivation layer（21）, the gate electrode
（7）It is to be located at first medium passivation layer（21）Above and it is placed in source electrode（5）And drain electrode（6）Between annular, gate electrode（7）'s
Lower part passes through first medium passivation layer（21）To InxAlyGa1-x-yN barrier layer（4）Surface, in the first medium passivation layer
（21）And gate electrode（7）Upper surface be covered with second medium passivation layer（22）, in the drain electrode（6）On have across first medium
Passivation layer（21）And second medium passivation layer（22）Through-hole, in through-hole and second medium passivation layer（22）On have expansion electrode
（23）.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108493233A (en) * | 2018-05-08 | 2018-09-04 | 大连芯冠科技有限公司 | The GaN HEMT devices that conducting resistance improves operational reliability can be reduced |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108493233A (en) * | 2018-05-08 | 2018-09-04 | 大连芯冠科技有限公司 | The GaN HEMT devices that conducting resistance improves operational reliability can be reduced |
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Address after: 116000 building 7, industrial design Industrial Park, No. 57 Xinda street, Qixianling, high tech Industrial Park, Dalian, Liaoning Patentee after: Runxin Microelectronics (Dalian) Co.,Ltd. Address before: 116023 building 7, industrial design Industrial Park, No. 57, Xinda street, Qixianling, high tech Industrial Park, Shahekou District, Dalian City, Liaoning Province Patentee before: DALIAN XINGUAN TECHNOLOGY CO.,LTD. |
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