CN208142180U - A kind of cmos image sensor encapsulating structure - Google Patents
A kind of cmos image sensor encapsulating structure Download PDFInfo
- Publication number
- CN208142180U CN208142180U CN201820527180.2U CN201820527180U CN208142180U CN 208142180 U CN208142180 U CN 208142180U CN 201820527180 U CN201820527180 U CN 201820527180U CN 208142180 U CN208142180 U CN 208142180U
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- CN
- China
- Prior art keywords
- glass
- image sensor
- cmos image
- utility
- model
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011521 glass Substances 0.000 claims abstract description 20
- 239000011248 coating agent Substances 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims abstract description 5
- 239000003292 glue Substances 0.000 claims description 7
- 230000004313 glare Effects 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000227425 Pieris rapae crucivora Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The utility model discloses a kind of cmos image sensor encapsulating structures, glass (3) is packaged on wafer (1) by being bonded cofferdam (2), it is characterized in that, the glass (3) uses the glass of infrared cut coating plated film；200~300 microns of thickness of glass (3).Solve the problems, such as glare, at low cost, effect is good.
Description
This application claims filed on January 23rd, 2018 application No. is 201810072743.8, entitled one kind
The priority of the Chinese patent of cmos image sensor encapsulating structure.
Technical field
The utility model relates to microelectronics technology more particularly to a kind of cmos image sensor encapsulating structures.
Background technique
CMOS (Complementary Metal Oxide Semiconductor), complementary metal oxide semiconductor.
Cmos image sensor is a kind of typical solid state image sensor.Cmos image sensor is usually by image-sensitive cell array, row
A few part compositions such as driver, row driver, time sequence control logic, AD converter, data/address bus output interface, control interface,
This several part is usually all integrated on same silicon wafer.Its course of work generally can be divided into reset, photoelectric conversion, integral, reading
Several parts out.
Currently, the wafer-level packaging of CMOS image sensor product, the glass of bonding is using common white light glass, envelope
The product of dress is after being fabricated to camera module, it may occur that glare problem.Solve the problems, such as that the mode of glare is few at present, mostly at
This is higher, and effect is undesirable.
Summary of the invention
The purpose of the utility model is to provide a kind of cmos image sensor encapsulating structures, solve the problems, such as glare, at low cost,
Effect is good.
The purpose of this utility model is achieved through the following technical solutions：
A kind of cmos image sensor encapsulating structure, glass 3 are packaged on wafer 1 by being bonded cofferdam 2, the glass
3 use the glass of infrared cut coating plated film；200~300 microns of 3 thickness of glass.
The bonding cofferdam 2 uses black glue.
A kind of CMOS provided by the embodiment of the utility model it can be seen from above-mentioned technical solution provided by the utility model
Image sensor package structure solves the problems, such as glare, at low cost, and effect is good.
Detailed description of the invention
It, below will be to required in embodiment description in order to illustrate more clearly of the technical solution of the utility model embodiment
The attached drawing used is briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the utility model
Example, for those of ordinary skill in the art, without creative efforts, can also be according to these attached drawings
Obtain other accompanying drawings.
Fig. 1 is the structural schematic diagram one of cmos image sensor encapsulating structure provided by the embodiment of the utility model；
Fig. 2 is the structural schematic diagram two of cmos image sensor encapsulating structure provided by the embodiment of the utility model.
Specific embodiment
Below with reference to the attached drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out clear
Chu is fully described by, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole realities
Apply example.Based on the embodiments of the present invention, those of ordinary skill in the art are obtained without making creative work
The every other embodiment obtained, belongs to the protection scope of the utility model.
The utility model embodiment is described in further detail below in conjunction with attached drawing.
As shown in Figure 1, a kind of cmos image sensor encapsulating structure, glass 3 is packaged on wafer 1 by being bonded cofferdam 2,
The glass 3 uses the glass of infrared cut coating (IR CUT) plated film；, infrared cut coating IR-CUT can effectively prevent ring
Infrared ray in the light of border.In the induction to visible light and when converting electric current, this part infrared ray will cause to be turned chip photosensitive unit
The crosstalk of galvanic current, to be easier that the glare problem of chip imaging occurs.
200~300 microns of 3 thickness of glass, can effectively reduce the influence of glare, under the thickness, it is seen that light can be with
Effectively enter the photosensitive unit of chip by glass refraction, it is effective to reduce optical interference caused by the reflection of glass surfaces externally and internally,
To reduce glare problem odds.
The bonding cofferdam 2 uses black glue.Black glue refers here to completely black glue, and environment light enters encapsulation through cofferdam
The photosensitive unit of interior chip is mixed and disorderly interference light to chip, affects the induction of ordinary ray.The cofferdam of completely black glue, has
Effect prevents mixed and disorderly light to the incident photon-to-electron conversion efficiency of photosensitive unit, reduces glare odds.Cofferdam material inhales environment light
Receipts ability is stronger, prevents the effect of glare better.Most preferably 100% absorption, i.e., completely black black glue
The preferable specific embodiment of the above, only the utility model, but the protection scope of the utility model is not
It is confined to this, anyone skilled in the art can readily occur in the technical scope that the utility model discloses
Change or replacement, should be covered within the scope of the utility model.Therefore, the protection scope of the utility model should
Subject to the scope of protection of the claims.
Claims (1)
1. a kind of cmos image sensor encapsulating structure, glass (3) is packaged on wafer (1) by being bonded cofferdam (2), feature
It is, the glass (3) uses the glass of infrared cut coating plated film；200~300 microns of thickness of glass (3)；The bonding
Cofferdam (2) uses black glue.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810072743 | 2018-01-23 | ||
| CN2018100727438 | 2018-01-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208142180U true CN208142180U (en) | 2018-11-23 |
Family
ID=63008146
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810332707.0A Pending CN108364969A (en) | 2018-01-23 | 2018-04-13 | A kind of cmos image sensor encapsulating structure |
| CN201820527180.2U Active CN208142180U (en) | 2018-01-23 | 2018-04-13 | A kind of cmos image sensor encapsulating structure |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810332707.0A Pending CN108364969A (en) | 2018-01-23 | 2018-04-13 | A kind of cmos image sensor encapsulating structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN108364969A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108364969A (en) * | 2018-01-23 | 2018-08-03 | 北京思比科微电子技术股份有限公司 | A kind of cmos image sensor encapsulating structure |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110649055A (en) * | 2019-09-27 | 2020-01-03 | 华天科技（昆山）电子有限公司 | Wafer-level packaging method and packaging structure for improving glare problem of CIS chip |
| CN110993513A (en) * | 2019-12-17 | 2020-04-10 | 华天科技（昆山）电子有限公司 | Wafer-level fan-out type packaging method and structure of CIS chip |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7335870B1 (en) * | 2006-10-06 | 2008-02-26 | Advanced Chip Engineering Technology Inc. | Method for image sensor protection |
| CN101656258A (en) * | 2008-08-20 | 2010-02-24 | 鸿富锦精密工业（深圳）有限公司 | Image sensor packaging structure, packaging method and camera module |
| CN102903726B (en) * | 2012-09-29 | 2016-02-10 | 格科微电子（上海）有限公司 | The wafer-level packaging method of imageing sensor |
| CN102983144B (en) * | 2012-11-30 | 2015-02-11 | 格科微电子（上海）有限公司 | Wafer level packaging method of image sensor |
| CN103367382B (en) * | 2013-07-23 | 2016-03-09 | 格科微电子（上海）有限公司 | A kind of wafer-level packaging method of image sensor chip |
| CN103956368B (en) * | 2014-05-20 | 2016-06-15 | 苏州科阳光电科技有限公司 | The encapsulation structure of wafer level image sensing module |
| CN105914215B (en) * | 2016-04-21 | 2020-06-02 | 格科微电子（上海）有限公司 | Chip-scale packaging method of CMOS image sensor |
| CN105870145A (en) * | 2016-06-23 | 2016-08-17 | 华天科技（昆山）电子有限公司 | Image sensor package structure and wafer-grade preparation method thereof |
| CN106935606A (en) * | 2017-05-11 | 2017-07-07 | 北京工业大学 | A kind of encapsulating structure of image sensor |
| CN108364969A (en) * | 2018-01-23 | 2018-08-03 | 北京思比科微电子技术股份有限公司 | A kind of cmos image sensor encapsulating structure |
-
2018
- 2018-04-13 CN CN201810332707.0A patent/CN108364969A/en active Pending
- 2018-04-13 CN CN201820527180.2U patent/CN208142180U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108364969A (en) * | 2018-01-23 | 2018-08-03 | 北京思比科微电子技术股份有限公司 | A kind of cmos image sensor encapsulating structure |
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| Publication number | Publication date |
|---|---|
| CN108364969A (en) | 2018-08-03 |
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