CN216116380U - Non-refrigeration infrared detector packaging structure based on MEMS technology - Google Patents
Non-refrigeration infrared detector packaging structure based on MEMS technology Download PDFInfo
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- CN216116380U CN216116380U CN202120257803.0U CN202120257803U CN216116380U CN 216116380 U CN216116380 U CN 216116380U CN 202120257803 U CN202120257803 U CN 202120257803U CN 216116380 U CN216116380 U CN 216116380U
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Abstract
The utility model relates to an uncooled infrared detector packaging structure based on an MEMS (micro-electromechanical system) process, wherein an effective element, a substrate thermal short reference element and a blind element are formed on a substrate, the effective element is packaged by a first supporting layer, a second supporting layer and a sealing layer, the first supporting layer is supported on the substrate and covers the effective element, a plurality of first release holes are formed in the first supporting layer, the second supporting layer is supported on the first supporting layer and is patterned into a plurality of closed covers, the closed covers fit the first release holes one by one, and are provided with second release holes; the sealing layer is laminated on the second support layer and closes each second release hole. The first supporting layer, the second supporting layer and the sealing layer are matched, so that the infrared detector can be independently packaged in a vacuum micro-cavity which is reliably sealed, the process is simple, the packaging of the detector can be reliably completed without a cap wafer, and the packaging cost and the production cost of the uncooled infrared detector are greatly reduced.
Description
Technical Field
The utility model belongs to the technical field of infrared detectors, particularly relates to a packaging technology of an uncooled infrared detector, and particularly relates to an uncooled infrared detector packaging structure based on an MEMS (micro-electromechanical system) process.
Background
The infrared detector is a device for converting absorbed infrared signals into electric signals to be output, and the existing uncooled infrared detector mainly adopts a metal packaging mode, a ceramic packaging mode and a wafer level packaging mode.
The packaging cost of the metal packaging mode and the ceramic packaging mode accounts for 90% of the whole detector cost, and the cost is high and the efficiency is low. The wafer level packaging mode is that the cap wafer and the infrared focal plane wafer processed on the reading circuit are bonded, and a single wafer level detector chip is obtained after scribing treatment.
SUMMERY OF THE UTILITY MODEL
The utility model relates to an uncooled infrared detector packaging structure based on an MEMS (micro-electromechanical system) process, which can at least solve part of defects in the prior art.
The utility model relates to an uncooled infrared detector packaging structure based on an MEMS (micro electro mechanical system) process, which comprises a substrate, wherein an effective element, a substrate thermal short reference element and a blind element are formed on the substrate, the effective element is packaged by a first packaging unit, the first packaging unit comprises a first supporting component and a sealing layer, and the first supporting component comprises a first supporting layer and a second supporting layer;
the first support layer is in a cover type structure, the first support layer is supported on the substrate and covers the effective element, a distance is reserved between the cover top of the first support layer and the effective element, and a plurality of first release holes are formed in the cover top;
the second supporting layer is supported on the first supporting layer and is patterned into a plurality of closing covers, the number of the closing covers is the same as that of the first release holes, the closing covers are arranged in a one-to-one correspondence manner, the corresponding first release holes are covered by the closing covers, a distance is reserved between the cover tops of the closing covers and the corresponding first release holes, and second release holes are formed in the cover tops;
the sealing layer is laminated on the second support layer and closes each of the second release holes.
In one embodiment, the sealing layer is an infrared antireflection film.
As an embodiment, a projection of the second release hole on a horizontal plane is offset from a projection of the corresponding first release hole on the horizontal plane.
In one embodiment, the first support layer is an amorphous silicon support layer.
As an embodiment, the substrate thermal short reference element and the blind element are respectively packaged by a second packaging unit, and the second packaging unit comprises a packaging cap which is supported on the substrate and covers the corresponding module.
In one embodiment, the package cap is an amorphous silicon package layer.
In one embodiment, the substrate further has an optical reference element formed thereon, and the optical reference element is encapsulated by a third encapsulation unit.
As one embodiment, the third packaging unit includes a second support member having the same structure as the first support member, wherein each of the second release holes of the second support member is sealed by a sealing member.
As one embodiment, the hole sealing piece is a film type hole sealing piece and adopts a non-infrared antireflection film.
In one embodiment, the active element, the optical reference element and the substrate thermal short reference element are located on the same side of the blind element, and the active element, the substrate thermal short reference element and the optical reference element are arranged in sequence along the length direction of the blind element.
The utility model has at least the following beneficial effects:
according to the uncooled infrared detector packaging structure provided by the utility model, the first supporting layer, the second supporting layer and the sealing layer are matched, so that the sacrificial layer utilized in the packaging process is well released, meanwhile, the uncooled infrared detector packaging structure can independently package the effective element into the reliably sealed vacuum micro-cavity, the process is simple, the detector can be reliably packaged without a cap wafer, and the packaging cost and the production cost of the uncooled infrared detector are greatly reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a top view of a device wafer MEMS layout prior to packaging;
FIG. 2 is a side view of a device wafer before packaging (with substrate thermal short reference elements omitted);
fig. 3-11 are process flow diagrams of the non-refrigeration infrared detector packaging structure provided by the embodiment of the utility model; wherein the content of the first and second substances,
FIG. 3 is a diagram showing a step of preparing a second sacrificial layer;
FIG. 4 is a diagram showing a step of preparing a first support layer;
FIG. 5 is a diagram of a step of etching a first release hole;
FIG. 6 is a top view after etching the first release hole;
FIG. 7 is a diagram showing a step of preparing a third sacrificial layer;
FIG. 8 is a diagram showing a step of preparing a second support layer;
FIG. 9 is a diagram illustrating a step of etching a second release hole;
FIG. 10 is a diagram showing a step of releasing each sacrificial layer;
fig. 11 is a schematic view of the package structure after sealing each second release hole.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 11, an embodiment of the present invention provides an uncooled infrared detector package structure based on a MEMS process, including a substrate 5, on which an active element 1, a substrate thermal short reference element 3, and a blind element 4 are formed, where the active element 1 is packaged by a first packaging unit, the first packaging unit includes a first supporting component and a sealing layer 83, and the first supporting component includes a first supporting layer 81 and a second supporting layer 82; the first supporting layer 81 is in a hood-type structure, the first supporting layer 81 is supported on the substrate 5 and covers the active element 1, a distance is provided between a hood top of the first supporting layer 81 and the active element 1, and a plurality of first release holes 811 are formed on the hood top; the second supporting layer 82 is supported on the first supporting layer 81 and is patterned into a plurality of closing covers, the number of the closing covers is the same as that of the first releasing holes 811, the closing covers are arranged in a one-to-one correspondence manner, the corresponding first releasing holes 811 are covered by the closing covers, a space is reserved between the cover tops of the closing covers and the corresponding first releasing holes 811, and second releasing holes are formed in the cover tops; the sealing layer 83 is superimposed on the second support layer 82 and closes each of the second release holes.
The substrate 5 and the formation of the active element 1, the substrate thermal short reference element 3 and the blind element 4 on the substrate 5 are conventional structures in the art, and are not described herein again.
The first support layer 81 is formed in a manner substantially as follows: as shown in fig. 1 to 6, a second sacrificial layer 7 is formed on the first sacrificial layer 6 of the active element 1, and the first supporting layer 81 is formed on the second sacrificial layer 7; when the first sacrificial layer 6 and the second sacrificial layer 7 are released, a space can be formed between the cap top of the first support layer 81 and the active element 1. In one embodiment, the first supporting layer 81 is an amorphous silicon supporting layer, which can be deposited on the second sacrificial layer 7 by a plating process; the amorphous silicon is used as the supporting layer, so that the response rate and sensitivity of the detector can be kept while a good supporting and packaging effect is ensured.
The second support layer 82 is formed in a manner of: as shown in fig. 7 to 9, a third sacrificial layer 9 is prepared on the first support layer 81, the third sacrificial layer 9 is patterned, and the second support layer 82 is formed on the third sacrificial layer 9; when the third sacrificial layer 9 is released, a space can be formed between the top of the closure cap and the first support layer 81. In one embodiment, the second support layer 82 is formed by a thin film deposition technique, which may also be an amorphous silicon thin film or other infrared antireflection film. It will be understood that the patterning of the third sacrificial layer 9 as described above may be used to complete the patterning of the second support layer 82, i.e. to notch the third sacrificial layer 9 on the first support layer 81, and that the plurality of closing caps as described above may be formed on the third sacrificial layer 9 that is not etched away when the second support layer 82 is deposited, and that the material of the second support layer 82 is correspondingly deposited on the first support layer 81 in the area of the etched away notches.
As shown in fig. 10, a microchannel can be formed by the combination of the second release hole and the first release hole 811, so as to facilitate the release of each sacrificial layer.
In one embodiment, the first release holes 811 are arranged in the same manner as the pixel units 11 of the active element 1, and generally, the pixel units 11 of the active element 1 are arranged in an array, so that the first release holes 811 are also arranged in the first support layer 81 in an array, the number of the first release holes 811 is the same as the number of the pixel units 11 of the active element 1, and the first release holes 811 are arranged in a one-to-one correspondence manner, for example, the first release holes 811 are located right above the corresponding pixel units 11.
Further preferably, as shown in fig. 9-11, the second release hole is preferably offset from the corresponding first release hole 811, i.e. the projection of the second release hole on the horizontal plane deviates from the projection of the corresponding first release hole 811 on the horizontal plane; based on this design, the sealing effect of the sealing layer 83 to the second release hole can be improved, that is, the vacuum sealing state of the first package unit can be effectively improved.
Preferably, the sealing layer 83 is an infrared Reflection reducing coating, such as an AR (Anti-Reflection) coating, which can maintain the responsivity and sensitivity of the detector. The sealing layer 83 need not be patterned.
Further optimizing the above package structure, the substrate thermal short reference element 3 and the blind element 4 are respectively packaged by a second packaging unit, and the second packaging unit includes a packaging cap, which is supported on the substrate 5 and covers the corresponding module therein. The substrate thermal short reference cells 3 and the blind cells 4 are preferably packaged in the same period as the package of the active cell 1, specifically, when the second sacrificial layer 7 is prepared on the active cell 1, the second sacrificial layer 7 is formed on the substrate thermal short reference cells 3 and the blind cells 4 together, the second sacrificial layer 7 is patterned according to a module region, and when the first support layer 81 is prepared on the second sacrificial layer 7, the first support layer 81 is formed on the substrate thermal short reference cells 3 and the blind cells 4 together to form the package cap; that is, the package cap has the same structure as the first support layer 81, and preferably adopts an amorphous silicon package layer; further, when the third sacrificial layer 9 and the second support layer 82 are prepared, the third sacrificial layer 9 on the substrate thermal short reference element 3 and the blind element 4 is completely etched, and the second support layer 82 on the substrate thermal short reference element 3 and the blind element 4 is completely etched.
Further, as shown in fig. 1 to 11, an optical reference element 2 is also formed on the substrate 5; the arrangement of the optical reference cells 2 on the substrate 5 is also conventional in the art, and in an alternative embodiment, as shown in fig. 1, the effective cells 1, the optical reference cells 2 and the substrate thermal short reference cells 3 are located on the same side of the blind cells 4, and the effective cells 1, the substrate thermal short reference cells 3 and the optical reference cells 2 are arranged in sequence along the length direction of the blind cells 4.
The optical reference cell 2 is encapsulated by a third encapsulation unit. The packaging of the optical reference cell 2 and the packaging of the above-mentioned active cell 1 are preferably performed simultaneously to improve the packaging efficiency. In one embodiment, as shown in fig. 3 to 11, the third packaging unit comprises a second support component, the second support component has the same structure as the first support component, and each second release hole of the second support component is blocked by a blocking piece 84. When a second sacrificial layer 7 is prepared on the effective element 1, the second sacrificial layer 7 is formed on the optical reference element 2 together, the second sacrificial layer 7 is patterned according to a module area, and when a first supporting layer 81 is prepared on the second sacrificial layer 7, the first supporting layer 81 is formed on the optical reference element 2 together; therefore, the functional modules on the substrate 5 can be independently packaged, and the functional modules are packaged in independent vacuum micro-cavities without reducing the packaging efficiency. The hole sealing member 84 is preferably a film hole sealing member 84 and a non-infrared antireflection film; a non-infrared antireflection film may be disposed on the second support layer 82 of the optical reference cell 2 and patterned to form a plurality of the above-described hole sealers 84.
The uncooled infrared detector packaging structure provided by the embodiment can independently package the effective element 1 in the vacuum micro-cavity which is reliably sealed while better releasing the sacrificial layer utilized in the packaging process through the cooperation of the first supporting layer 81, the second supporting layer 82 and the sealing layer 83, has a simple process, can reliably complete the packaging of the detector without a cap wafer, and greatly reduces the packaging cost and the production cost of the uncooled infrared detector.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the utility model, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. An uncooled infrared detector packaging structure based on MEMS technology comprises a substrate, wherein an effective element, a substrate thermal short reference element and a blind element are formed on the substrate, and the uncooled infrared detector packaging structure is characterized in that: the active element is packaged by a first packaging unit, the first packaging unit comprises a first supporting component and a sealing layer, and the first supporting component comprises a first supporting layer and a second supporting layer;
the first support layer is in a cover type structure, the first support layer is supported on the substrate and covers the effective element, a distance is reserved between the cover top of the first support layer and the effective element, and a plurality of first release holes are formed in the cover top;
the second supporting layer is supported on the first supporting layer and is patterned into a plurality of closing covers, the number of the closing covers is the same as that of the first release holes, the closing covers are arranged in a one-to-one correspondence manner, the corresponding first release holes are covered by the closing covers, a distance is reserved between the cover tops of the closing covers and the corresponding first release holes, and second release holes are formed in the cover tops;
the sealing layer is laminated on the second support layer and closes each of the second release holes.
2. The uncooled infrared detector package structure based on the MEMS process of claim 1, wherein: the sealing layer adopts an infrared antireflection film.
3. The uncooled infrared detector package structure based on the MEMS process of claim 1, wherein: the projection of the second release hole on the horizontal plane is offset from the projection of the corresponding first release hole on the horizontal plane.
4. The uncooled infrared detector package structure based on the MEMS process of claim 1, wherein: the first supporting layer is an amorphous silicon supporting layer.
5. The uncooled infrared detector package structure based on the MEMS process of claim 1, wherein: the substrate thermal short reference element and the blind element are respectively packaged through a second packaging unit, and the second packaging unit comprises a packaging cap which is supported on the substrate and covers the corresponding module.
6. The uncooled infrared detector package structure according to claim 5, wherein: the packaging cap is an amorphous silicon packaging layer.
7. The uncooled infrared detector package structure based on the MEMS process of claim 1, wherein: an optical reference cell is also formed on the substrate, and the optical reference cell is encapsulated by a third encapsulation unit.
8. The uncooled infrared detector package structure according to claim 7, wherein: the third packaging unit comprises a second supporting assembly, the composition structure of the second supporting assembly is the same as that of the first supporting assembly, and each second release hole of the second supporting assembly is sealed by a sealing piece.
9. The uncooled infrared detector package structure according to claim 8, wherein: the hole sealing piece is a film type hole sealing piece and adopts a non-infrared antireflection film.
10. The uncooled infrared detector package structure according to claim 7, wherein: the effective element, the optical reference element and the substrate thermal short reference element are positioned on the same side of the blind element, and the effective element, the substrate thermal short reference element and the optical reference element are sequentially arranged along the length direction of the blind element.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202120257803.0U CN216116380U (en) | 2021-01-29 | 2021-01-29 | Non-refrigeration infrared detector packaging structure based on MEMS technology |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202120257803.0U CN216116380U (en) | 2021-01-29 | 2021-01-29 | Non-refrigeration infrared detector packaging structure based on MEMS technology |
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| CN216116380U true CN216116380U (en) | 2022-03-22 |
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