CN208110249U - VCSEL array light source, pattern projector and depth camera - Google Patents
VCSEL array light source, pattern projector and depth camera Download PDFInfo
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- CN208110249U CN208110249U CN201820536896.9U CN201820536896U CN208110249U CN 208110249 U CN208110249 U CN 208110249U CN 201820536896 U CN201820536896 U CN 201820536896U CN 208110249 U CN208110249 U CN 208110249U
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Abstract
The utility model discloses a kind of VCSEL array light source, pattern projector and depth camera, VCSEL array light source includes：Substrate；And the multiple VCSEL light sources arranged in the form of an array on substrate；The array arrangement that the multiple VCSEL light source is formed includes the neighboring area that intermediate region and density are less than intermediate region.Two regions being distributed by using different densities：Intermediate region and density are less than the neighboring area of intermediate region, the light beam gone out using the VCSEL array light sources project, light source hardware foundation can be provided for overlapping pattern projector, and then can effectively solve the problems, such as to project caused by because of temperature change or foozle in pattern and generate gap to reduce depth image quality.
Description
Technical field
The utility model relates to electronics and optical component manufacturing field more particularly to a kind of VCSEL array light sources, pattern
Projector and depth camera.
Background technique
The depth information of the available target of depth camera realizes 3D scanning, scene modeling, gesture interaction whereby, and current
The RGB camera being widely used is compared, and depth camera is just gradually by the attention of all trades and professions.Such as utilize depth camera and electricity
Combining depending on, computer etc. may be implemented somatic sensation television game to achieve the effect that game and body-building is two-in-one.In addition, the depth camera of micromation
The functions such as recognition of face, unlock, payment can also be realized in conjunction with mobile device, come completely newly to equipment belts such as plate, mobile phones
Bio-identification experience.
Core component in depth camera is laser pattern projector instrument, with the continuous pursuit to volume and power consumption, is swashed
Light pattern projector is constantly evolved in smaller and smaller volume and higher and higher performance.Generally, laser pattern projector
Instrument is made of components such as light source, diffraction optical elements (DOE), the vertical cavity surface emitting laser of wafer current grade size
(VCSEL) array light source can reduce the volume of projector to be embedded in the small electronic equipments such as mobile phone.DOE then may be used
It is split with the light for being issued VCSEL array light source to form the pattern for having more light beams, such as patent application
Scheme described in CN201711080702.5.
However, being then faced with problems to allow projector projects to go out ideal patterned beam.Ideal patterning
Light beam, which projects, to be formed by pattern and should have higher non-correlation degree, the uniformity and a field angle in plane, however this three
It is often difficult to get both, for example the uniformity is often poor when non-correlation degree is high and field angle is larger；Importantly, when projection
After instrument micromation, the heat dissipation such as light source, optical element is relatively poor, and the pattern of projector projects is unstable under temperature change,
Thus non-correlation degree, the uniformity, the field angle etc. for also resulting in pattern are affected, so that the meter of successive depths image can be reduced
Calculate precision.
Utility model content
To solve the above problems, the utility model proposes a kind of VCSEL array light source, pattern projector and depth cameras.
The utility model provides a kind of VCSEL array light source, including：Substrate；And it arranges in the form of an array on substrate
Multiple VCSEL light sources；It include that intermediate region and density are less than centre in the array arrangement that the multiple VCSEL light source is formed
The neighboring area in region.
In some embodiments, the neighboring area includes that 4 corner regions and 4 remove the intermediate region and institute
State the side area except corner regions.Wherein, the density of the corner regions is the 1/4 of intermediate region density, the side
The density in region is the 1/2 of intermediate region density.
In some embodiments, mutually complementary in the arrangement of cornerwise light source in the corner regions, so that in weight
The corresponding light beam of each light source is not superimposed when folded；The arrangement of light source in the side area in opposite side is mutually complementary, with
So that not being superimposed between the corresponding light beam of each light source in overlapping.
The utility model also provides a kind of pattern projector, including：VCSEL array light source as described above, for emitting
Multiple light beams out；Lens, formation is corresponding with light source arrangement in the VCSEL array light source after receiving and converging the multiple light beam
Sub-pattern light beam；Diffraction optical element is projected out the figure with bigger field angle after being replicated the sub-pattern light beam
Case light beam；The patterned beam is composed of multiple sub-pattern light beams, and between the multiple sub-pattern light beam
It overlaps, forms part overlapping region.
In some embodiments, the region that partly overlaps is corresponding with the neighboring area.Wherein, the area that partly overlaps
The corresponding angle Δ θ in domain meets formula：Wherein m is diffraction progression, and Λ is the period of the DOE, θm
Refer to the angle of diffraction for the m grades of diffracted beams that the light beam that wavelength is λ generates when being incident on the DOE, Δ λ refer to by temperature change or
The wavelength change of the VCSEL array light source caused by foozle etc..
In some embodiments, the region that partly overlaps is no more than the 50% of the patterned beam region.Another
In a little embodiments, the region that partly overlaps states the 10% of patterned beam region no more than described.
The utility model also provides a kind of depth camera, including：Pattern projector as described above, for being thrown into space
Penetrate structured light patterns light beam；Mould group is acquired, for acquiring the structured light patterns；Processor receives the structured light patterns
After calculate depth image.
The beneficial effects of the utility model：The arrangement of light source is distributed using different densities on VCSEL array light source two
Region：The neighboring area of intermediate region and density less than intermediate region, the light beam gone out using the VCSEL array light sources project,
Light source hardware foundation can be provided for overlapping pattern projector, and then can effectively solve to be led because of temperature change or foozle
It causes to lead to the problem of gap in projection pattern to reduce depth image quality.
Detailed description of the invention
Fig. 1 is the structure light depth camera side schematic view according to the utility model one embodiment.
Fig. 2 is the laser projection mould group schematic diagram according to the utility model one embodiment.
Fig. 3 be according to the DOE of the utility model one embodiment to single beam incidence when beam splitting schematic diagram.
Fig. 4 is the schematic diagram according to the VCSEL array light source of the utility model one embodiment.
Fig. 5 for according to the utility model one embodiment because temperature change leads to the changed signal of institute's projection pattern
Figure.
Fig. 6 is the projection pattern schematic diagram according to the utility model one embodiment.
Fig. 7 is the VCSEL array distribution of light sources schematic diagram according to the utility model one embodiment.
Specific embodiment
With reference to embodiment and compares attached drawing the utility model is described in further detail, it should be emphasised that
It is that following the description is only exemplary, rather than in order to limit the scope of the utility model and its application.
Shown in FIG. 1 is the structure light depth camera side schematic view according to the utility model one embodiment.Structure light
The main building block of depth camera 10 has pattern projector 103, acquisition mould group 105, mainboard 102 and processor 101, some
RGB camera 104 etc. is further provided in depth camera.Pattern projector 103, acquisition mould group 105 and the generally quilt of RGB camera 104
It is mounted in the same depth camera plane, and is in same baseline, each mould group or camera correspond to a light portal
106.Generally, processor 101 is integrated on mainboard 102, and pattern projector 103 and collection model 105 by interface with
Mainboard 102 connects, and the interface is FPC interface in one embodiment.Pattern projector 103 into object space for throwing
Encoded structured light patterns light beam is penetrated, acquisition mould group 105 is calculated after collecting the structured light patterns by processor 101
To obtain the depth image of object space.
Pattern projector 103 mainly includes light source and optical element, and light source may include such as LED, laser light source, is used
In transmitting visible light and the black lights such as infrared, ultraviolet.Optical element such as lens, diffraction optical element, reflecting mirror etc., is used for
The light beam issued to light source is modulated, to be projected out structured light patterns light beam outward.Structured light patterns light beam mentioned here
The pattern will be formed by referring to that the pattern beam projects on space plane.Acquire mould group 105 and pattern projector 103 often one
One is corresponding, and the visual field of pattern projector 103 generally requires the visual field of the covering acquisition mould group 105 in measurement range, on the other hand,
Acquisition mould group 105 generally requires setting optical filter corresponding with 103 beam emitted wavelength of pattern projector, in order to allow more
The light of more structured light patterns light beams, which passes through while reducing other wavelength light beams, passes through brought picture noise.
In one embodiment, structured light patterns are infrared speckle pattern (infrared speckle patterns), and pattern is with particle point
Cloth is relatively uniform but has very high local irrelevance, and local irrelevance here refers to that each sub-regions are all in pattern
Uniqueness with higher, acquiring mould group 105 at this time is corresponding infrared camera.Structured light patterns are also possible to striped, two dimension
The other forms such as pattern.
The chief component of depth camera based on time flight method principle (TOF) is also pattern projector and acquisition mould
Group, its pattern projector is adopted for emitting the light pulse clocked, acquisition mould group unlike the depth camera of structure light principle
It can be obtained by the flight time of light in space after collecting the light pulse, processor recycled to calculate corresponding spatial point
Distance.
Fig. 2 is a kind of embodiment of pattern projector 103 in Fig. 1.The pattern projector 103 includes pedestal (including main bottom
Seat 201, secondary pedestal 202 and circuit board 203), light source chip 204, microscope base 206, lens 207 and diffraction optical element
(DOE)208.The light beam that light source chip 204 issues is emitted from DOE208 into space after lens 207 are collimated or focused, generally
Ground, lens 207 between light source chip 204 and DOE208, the distance between lens 207 and light source chip 204 be equal to or
It is approximately equal to the focal length of lens 207.Lens 207 and DOE208 can also be integrated into an optical element in other embodiments,
For example it is formed on two surfaces of one piece of transparent substrates.In some embodiments, thermistor 205 can also be arranged to come to light
Temperature around source chip 204 measures, and any suitable thermistor can be applied in mould group, such as NTC, PTC
Deng.
Light source chip 204 can be semiconductor LED, semiconductor laser etc., preferably use vertical cavity surface laser emitter
(VCSEL) array is as light source, since VCSEL possesses the features such as small in size, the light source angle of departure is small, stability is good, while can be with
Hundreds and thousands of a VCSEL light sources are arranged in the semiconductor substrate of area 1mmx1mm, the VCSEL array light source core thus constituted
Piece is not only small in size, low in energy consumption, while being more conducive to generating structure light speckle patterns light beam.
Shown in Fig. 4 is the schematic diagram of VCSEL array light source.VCSEL array light source is by substrate 401, multiple VCSEL light sources
402 and control assembly (not shown) composition.Multiple VCSEL light sources 402 arrange in the form of an array on substrate, and are controlling
It shines under the control of component processed.There can be different modes to the control of VCSEL light source, such as can be by all VCSEL light
Source be in synchronized control it is on and off, alternatively, VCSEL on chip is close to generate different illumination by independent or grouping control
Degree.In some embodiments, using the first mode, i.e. VCSEL light source all on chip is in synchronized control on and off.
In further embodiments, second of mode can be used, i.e. VCSEL on chip is by independent or grouping control to generate difference
Illumination density.
The form of VCSEL402 and arrangement according to specific application demand can there are many, such as uniform regular array
Or irregular alignment is carried out with random uncorrelated pattern.The attributes such as shape, area, the wavelength of single VCSEL can not also
It is identical.In some embodiments, multiple VCSEL402 are uniformly regularly arranged in semiconductor substrate 401 with formation rule array
Light source.In further embodiments, multiple VCSEL402 with uncorrelated pattern irregular alignment in semiconductor substrate 401 with
Irregular array light source is formed, as shown in Figure 4.
VCSEL array light source 204 launches the multiple beam with certain angle of divergence, is formed after multiple beam entrance lens 207
Sub-pattern light beam corresponding with VCSEL array arrangement pattern, sub-pattern light beam are extended more times after being subsequently incident to DOE208
The patterned beam with bigger field angle is formed afterwards.Lens 207 can be lens group, one kind of microlens array or combination,
It is launched outward after converging the multiple beam that VCSEL array light source 204 is issued, and will be formed in far field and be arranged with VCSEL array
The corresponding sub-pattern of pattern, correspondence here include the modes such as identical, mirror image, central symmetry, rotation.DOE208 reception comes from
The beam array of lens, and identical beam splitting mode is implemented to each light beam in beam array.Shown in Fig. 3 is DOE to list
Beam splitting schematic diagram when light beam incidence.Single beam 301 be incident to be beamed into after DOE302 on one-dimensional 5 grades of diffracted beams (3,
1,0, -1, -3), it is only illustrated by taking 1-5 as an example here, the order of diffraction of other quantity can actually be beamed into, in addition diffraction
Grade is also possible to Two dimensional Distribution.If the subelement period of periodic arrangement is Λ, incident light beam wavelength λ, then m in DOE302
The angle of diffraction of grade diffracted beam is expressed as follows according to grating equation：
When incident beam is sub-pattern light beam, DOE302 forms final patterning light by multiple sub-patterns are copied
Beam, in one embodiment, the design to DOE so that multiple sub-patterns form final pattern in a manner of arranged adjacent
Change light beam, as shown in Figure 5 in the left, patterned beam is incident on the pattern 50 formed in plane and is made of 9 sub-patterns 51, respectively
A sub-pattern 51 is made of the light beam of the identical order of diffraction of different light sources.Pattern after considering the distortion such as lens is shown in figure
50 forms presented.DOE302 has carried out 9 times of beam splitting to incident each single beam.
In actual use, when the temperature varies, the wavelength of VCSEL light source can change, general ground temperature
Wavelength is then bigger when spending higher；In addition, due to the consistency problem of manufacture, for the VCSEL light source of batch production,
Wavelength also club's difference, and while designing DOE, is often designed according to a certain wavelength.If therefore going out energy according to a certain Wavelength design
When enough projecting the DOE of pattern as shown in Figure 5 in the left, in actual use it is possible that pattern and the discrepant feelings of design
Shape.
It can be obtained according to formula (1)：
It can further obtain：
When wavelength becomes λ ' from λ, the angle of diffraction of m grades of diffracted beams will be by θmBecome θ 'm, respectively indicated with Δ λ, Δ θ
The variation of wavelength and the angle of diffraction.
When wavelength change is smaller, i.e., when Δ λ is smaller,Formula (3) transformation can be obtained：
Above formula gives the variation of the angle of diffraction caused by wavelength change, as shown in figure 3, when temperature raising or foozle make
In the presence of obtaining situations such as wavelength is high compared with design wavelength, optical source wavelength increases, and eventually leads to angle when each order of diffraction is opposite to be designed
Angular variation has occurred in degree, and the light beam after offset is as shown in phantom in Figure 3.For VCSEL array light source, the figure that finally projects
Case light beam is formed by pattern will be shown in the right figure such as Fig. 5.As can be seen that since temperature change eventually leads to pattern projector
A plurality of gap is produced in the pattern projected, based on the pattern when calculating depth image, corresponding position in depth image
Also it will appear hole, seriously reduce the quality of depth image.
Fig. 6 is the projection pattern schematic diagram according to the utility model one embodiment.Pattern 60 includes by 9 sub-patterns
601~609 are composed, and each sub-pattern is corresponding with the arrangement pattern of VCSEL light source in VCSEL array light source.Adjacent
Overlap between two sub-patterns, for example the overlapping region between sub-pattern 601 and 606 is 611, subgraph 601,602,
605, the overlapping region between 606 is 610.Here partly overlapping purpose is to lead to practical projection in order to avoid wavelength change
Pattern situation as shown in the right figure of Fig. 5 occurs.The size of overlapping region can be configured according to wavelength change, if than
Wavelength X is based on when designing DOE, it is assumed that wavelength change is up to Δ λ, then the corresponding angle in overlapping region is i.e. such as formula (4)
Shown in Δ θ.
Generally, overlapping region is smaller relative to the region of each sub-pattern, for example is no more than the 1/ of sub-pattern region
10, to avoid the Density Distribution for influencing whole projection pattern when overlapping region is excessive.Theoretically, overlapping region is no more than subgraph
The 50% of case region.
It is understood that pattern density distribution in overlapping region such as 610,611 is wanted in projection pattern shown in fig. 6
Greater than underlapped region, if the arrangement pattern density of VCSEL array light source is uniformly distributed, the density of overlapping region 610 and 611
It respectively may be about 2 times, 4 times of underlapped region.When the relatively whole projection pattern region area of the area of overlapping region is smaller, weight
The increase of folded areal concentration can't cause large effect to whole projection pattern Density Distribution, however in some embodiments
In, the area of overlapping region is relatively large, and the Density Distribution that thus will lead to overlapping region is larger, in addition also holds in overlapping region
Easily there are multiple light beams to be overlapped so that the excessive situation of hot spot brightness.
Fig. 7 is the VCSEL array light source schematic diagram according to the utility model one embodiment.VCSEL array light source is by serving as a contrast
Bottom 701 and multiple VCSEL light sources 702 form.The arranging density of VCSEL light source 702 is uneven arrangement, neighboring area
Arranging density is lower than intermediate region, and VCSEL array light source with dotted line is divided into multiple regions in figure.Preferably,
The density highest of middle intermediate region 703, neighboring area are divided into two kinds, and one is four corner regions 705, density is middle area
The 1/4 of domain 703；Another kind is four side areas 704 in addition to four corner regions and intermediate region, during density is
Between region 703 1/2.
When using light source of the VCSEL array light source shown in Fig. 7 as pattern projector, while by pattern projector
DOE is designed to that the form of pattern as shown in Figure 6 can be formed, when the neighboring area in VCSEL array light source exactly corresponds to figure
Case sub-image partly overlap region when, then can produce the uniform patterned beam of Density Distribution.Specifically, shown in Fig. 7
VCSEL array light source launch multiple beam after converged through lens, generate corresponding with VCSEL array arrangement in Fig. 7 sub-pattern
Light beam, sub-pattern light beam at this time equally have the characteristics that intermediate region width is big, neighboring area density is small, and sub-pattern light beam is again
By forming the patterned beam being combined by multiple sub-patterns after the extension of DOE diffraction, wherein having part between adjacent sub-pattern
Overlapping, and partly overlapping region is just the small neighboring area of density.Then, in pattern 60 overlapping region 611 just by two
A density is that the side area of Non-overlapping Domain 1/2 forms, and overlapping region 610 is just Non-overlapping Domain 1/4 by 4 density
Corner regions composition, so that the density of overlapping region 610 and 611 is identical as the density of Non-overlapping Domain.Thus
It is projected out and partly overlaps and the uniform patterned beam of Density Distribution.
In one embodiment, in order to realize the size of side area, corner regions in VCSEL array light source just
The overlapping region in projection pattern can be corresponded to, after when overlapping region, corresponding angle Δ θ is determined, if the focal length of lens is f,
In design, the width d of side area then be can be set into VCSEL array light source：
From the perspective of from another angle, when known wavelength changes each of size delta λ, focal length of lens f and VCSEL array light source
After area size, reasonable DOE can be designed based on formula (1), (4), (5) to reach to be projected out and partly overlap and density point
The uniform patterned beam of cloth.
In conjunction with Fig. 6 and Fig. 7 it is found that the overlapping region in Fig. 6 between adjacent sub-pattern can be regarded as by VCSEL array
Overlapping in light source between neighboring area, such as overlapping region 611 are by two side areas opposite in VCSEL array light source
Sub-pattern region corresponding to (up and down with respect to or left and right opposite) is overlapped, and overlapping region 610 is then by VCSEL array light source
In sub-pattern region corresponding to four corner regions be overlapped.It needs that two light beams is avoided to fall as far as possible in overlapping region
The excessively high phenomenon of brightness is caused to occur on to same point, the superposition of two light beams equally also will affect Density Distribution, thus can be with
By in VCSEL array light source relative to 4 side areas and 4 corner regions in light source be arranged into complementary shape
Formula, i.e., side area is complementary up and down, left and right side area is complementary and 4 corner regions complementations, complementary to mean when complementation
Region overlapping when, the corresponding luminous point of light source can mutually stagger so that be not in superposition.
The utility model provides a kind of pattern projector, for projecting the patterning light being made of multiple sub-patterns
Beam, by partly overlapping between sub-pattern so that the variation of projector adaptive temperature and foozle, it is ensured that do not sympathizing with
The patterned beam projected under shape can generate the higher pattern of quality.One kind is additionally provided otherwise for this scheme
VCSEL array light source, wherein the arranging density of central source is greater than the arranging density of peripheral light source, it is possible thereby to make even if son
Pattern overlaps it is also possible that the density of overlapping region and the density of Non-overlapping Domain are almost identical.
The above content is specific/preferred embodiment further detailed description of the utility model is combined, no
It can assert that the specific implementation of the utility model is only limited to these instructions.For the common skill of the utility model technical field
For art personnel, without departing from the concept of the premise utility, the embodiment that these have been described can also be made
Some replacements or modifications, and these substitutions or variant all shall be regarded as belonging to the protection scope of the utility model.
Claims (10)
1. a kind of VCSEL array light source, which is characterized in that including：
Substrate；And
The multiple VCSEL light sources arranged in the form of an array on substrate；
The array arrangement that the multiple VCSEL light source is formed includes the peripheral region that intermediate region and density are less than intermediate region
Domain.
2. VCSEL array light source as described in claim 1, which is characterized in that the neighboring area include 4 corner regions with
And 4 side areas in addition to the intermediate region and the corner regions.
3. VCSEL array light source as claimed in claim 2, which is characterized in that the density of the corner regions is intermediate region
The 1/4 of density, the density of the side area are the 1/2 of intermediate region density.
4. VCSEL array light source as claimed in claim 2, which is characterized in that be in cornerwise light source in the corner regions
Arrangement it is mutually complementary so that the corresponding light beam of each light source is not superimposed in overlapping；It is in pair in the side area
The arrangement of the light source on side is mutually complementary, so that not being superimposed between the corresponding light beam of each light source in overlapping.
5. a kind of pattern projector, which is characterized in that including：
VCSEL array light source as described in claim 1-4 is any, for launching multiple light beams；
Lens receive and form subgraph corresponding with light source arrangement in the VCSEL array light source after converging the multiple light beam
Case light beam；
Diffraction optical element is projected out the patterned beam with bigger field angle after being replicated the sub-pattern light beam；
The patterned beam is composed of multiple sub-pattern light beams, and has part weight between the multiple sub-pattern light beam
It is folded, form part overlapping region.
6. pattern projector as claimed in claim 5, which is characterized in that the corresponding angle Δ θ in the region that partly overlaps is full
Sufficient formula：Wherein m is diffraction progression, and Λ is the period of the diffraction optical element, θmFinger wavelength is λ
The angle of diffraction of m grades of diffracted beams that generates when being incident on the diffraction optical element of light beam, Δ λ refer to by temperature change or
The wavelength change of the VCSEL array light source caused by foozle.
7. pattern projector as claimed in claim 6, which is characterized in that the size in the region that partly overlaps and the periphery
The size in region matches；The width d of the neighboring area meets formula：D ≈ f Δ θ, wherein f is the focal length of lens.
8. pattern projector as claimed in claim 5, which is characterized in that the region that partly overlaps is no more than the patterning
The 50% of beam area.
9. pattern projector as claimed in claim 5, which is characterized in that the region that partly overlaps is no more than the patterning
The 10% of beam area.
10. a kind of depth camera, which is characterized in that including：
Pattern projector as described in claim 5-9 is any, for the projective structure photo-patterning light beam into space；
Mould group is acquired, for acquiring the structured light patterns；
Processor calculates depth image after receiving the structured light patterns.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109739027A (en) * | 2019-01-16 | 2019-05-10 | 北京华捷艾米科技有限公司 | Luminous point array projection mould group and depth camera |
| CN113034564A (en) * | 2019-12-24 | 2021-06-25 | 奇景光电股份有限公司 | Structured light projector and method of projecting structured light |
| CN113065258A (en) * | 2021-04-09 | 2021-07-02 | 中国科学院半导体研究所 | Layout optimization method, layout optimization device, electronic device, and readable storage medium |
-
2018
- 2018-04-16 CN CN201820536896.9U patent/CN208110249U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109739027A (en) * | 2019-01-16 | 2019-05-10 | 北京华捷艾米科技有限公司 | Luminous point array projection mould group and depth camera |
| CN109739027B (en) * | 2019-01-16 | 2021-07-27 | 北京华捷艾米科技有限公司 | Light spot array projection module and depth camera |
| CN113034564A (en) * | 2019-12-24 | 2021-06-25 | 奇景光电股份有限公司 | Structured light projector and method of projecting structured light |
| CN113034564B (en) * | 2019-12-24 | 2024-02-23 | 奇景光电股份有限公司 | Structured light projector and method of projecting structured light |
| CN113065258A (en) * | 2021-04-09 | 2021-07-02 | 中国科学院半导体研究所 | Layout optimization method, layout optimization device, electronic device, and readable storage medium |
| CN113065258B (en) * | 2021-04-09 | 2023-09-05 | 中国科学院半导体研究所 | Arrangement optimizing method, arrangement optimizing device, electronic equipment and readable storage medium |
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