CN208094438U - A kind of anti-straight-through protection circuit of IGBT bridge arms - Google Patents
A kind of anti-straight-through protection circuit of IGBT bridge arms Download PDFInfo
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- CN208094438U CN208094438U CN201820597595.7U CN201820597595U CN208094438U CN 208094438 U CN208094438 U CN 208094438U CN 201820597595 U CN201820597595 U CN 201820597595U CN 208094438 U CN208094438 U CN 208094438U
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Abstract
The utility model discloses a kind of anti-straight-through protection circuits of IGBT bridge arms; it is related to electric vehicle controller field; the first input end of the circuit connects NAND gate and first and door by the first current-limiting resistance; second input terminal connects NAND gate and second and door by the second current-limiting resistance, and the output end of NAND gate is separately connected first and door and second and door；First connect third and the first end of door with the output end of door by the first filter circuit, third and the first output end that the second end of door is hanging, output end connects entire circuit, second connect the first end of the 4th and door with the output end of door by the second filter circuit, 4th connect the second output terminal of entire circuit with the second end of door, output end, the circuit has driving interlocking and driving current enlarging function, it is straight-through to avoid upper and lower bridge arm IGBT drivings, and under complicated operating mode, signal delay is minimum, is distorted small, strong antijamming capability.
Description
Technical field
The utility model is related to electric vehicle controller field, the anti-straight-through protection circuit of especially a kind of IGBT bridge arms.
Background technology
IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) is by MOS
(Metal-Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide Semiconductor field-effect are brilliant
Body pipe) and BJT (Bipolar Junction Transistor, bipolar junction transistor) composition compound full-control type voltage drive
Dynamic formula power semiconductor has obtained extensively the advantages of both collection in fields such as current transformer, frequency converter, Switching Power Supplies
General application, its effect is especially notable in high-power circuit, therefore the driving circuit of IGBT becomes guarantee whole device
The key link of normal operation.
Often have in high-power circuit and needs 6 IGBT arrangements, monoblock driving in multiple IGBT, such as bus controller
Plate often has 360mm or more, drives line to draw long, and IGBT is in output high current, complicated electromagnetic environment and extreme case
Under, there may be the problems such as being delayed, the upper and lower level voltage of waveform is unsmooth, the error signal of superposition spike burr, recess, very
Cause IGBT bridgc arm shorts straight-through to meeting false triggering.
Utility model content
The present inventor is regarding to the issue above and technical need, it is proposed that a kind of anti-straight-through protection circuit of IGBT bridge arms, the electricity
Road avoids upper and lower bridge arm IGBT drivings and leads directly to, and under complicated operating mode with driving interlocking and driving current enlarging function,
Signal delay is minimum, is distorted small, strong antijamming capability.
The technical solution of the utility model is as follows：
A kind of anti-straight-through protection circuit of IGBT bridge arms, the first input end of the protection circuit and the second input terminal are respectively used to
It connects micro-control unit MCU, MCU to input the drive signal of upper bridge arm IGBT from first input end, MCU is to lower bridge arm IGBT's
Drive signal is inputted from the second input terminal, is protected the first output end of circuit to connect and is driven bridge arm IGBT, second output terminal
It connects and drives lower bridge arm IGBT；
First input end by the first current-limiting resistance connect NAND gate first end and first with the first end of door, second
Input terminal by the second current-limiting resistance connect NAND gate second end and second with the first end of door, the output end point of NAND gate
Not Lian Jie first with the second end of door and second with the second end of door；First is connect with the output end of door by the first filter circuit
The second end of the first end of third and door, third and door is hanging, the first output of the output end connection protection circuit of third and door
End；Second connect the first end of the 4th and door with the output end of door by the second filter circuit, and the 4th is hanging with the second end of door,
4th connect the second output terminal of protection circuit with the output end of door.
Its further technical solution is that the circuit structure of the first filter circuit and the second filter circuit is identical, each to filter
Wave circuit includes filter capacitor and filter resistance, and filter capacitor and filter resistance are in parallel, and one end of the parallel circuit is as filtering
The input terminal of circuit connects external module with output end, the other end ground connection of the parallel circuit.
The advantageous effects of the utility model are：
1, increase interlock circuit in protection circuit disclosed in the present application, between the drive signal of upper and lower bridge arm IGBT into
Traveling wave shape interlocks, and using digital circuit and door, NAND gate, the two-way that acquisition testing drives upper and lower bridge arm IGBT drives letter
Number, judge whether the two-way drive signal of input normal, exports 1 tunnel of synthesis, then go with the drive signal inputted originally comparison,
Compare, export initial value in the case of the drive signal normal driving of input, low level is exported in the case of abnormal driving,
The danger avoided between upper and lower bridge arm IGBT is straight-through.
2, filter circuit and driving current amplifying circuit are also added in protection circuit disclosed in the present application, former drive can be adjusted
Along waveform precipitous time, stable, smooth high low level voltage under on dynamic signal, while waveform shaping is mutually often done, in complicated work
Under condition, signal delay is small, is distorted small, strong antijamming capability, when the circuit is applied in electric automobiles, in the row of electric vehicle
In sailing, vibration, high temperature, high humidity, complexity operating mode under, MCU calculates control, it is desirable that controller exports scheduled torque, rotating speed, electricity
Road can quickly respond the correct drive signal of output, and corresponding instruction is completed in cooperation.
3, in protection circuit disclosed in the present application, each digital circuit and door, NAND gate are all discrete component, PCB fabric swatch
It is conveniently controlled between each node, reduces line impedence, improves interference resistance.
Description of the drawings
Fig. 1 is the circuit diagram of the anti-straight-through protection circuit of IGBT bridge arms disclosed in the present application.
Specific implementation mode
Specific embodiment of the present utility model is described further below in conjunction with the accompanying drawings.
This application discloses a kind of anti-straight-through protection circuits of IGBT bridge arms, please refer to Fig.1 the circuit diagram shown, protection electricity
The first input end X_Gin on road passes through the first current-limiting resistance R1Connect the first end I0 feet of NAND gate U1, the second input terminal U_Gin
Pass through the second current-limiting resistance R2The second end I1 feet of NAND gate U1 are connected, the NAND gate U1 in the application is used
MC74VHC1G00DFT1G chips realize that VCC foot connection+5V power supplys, the GND feet of NAND gate U1 are grounded.First input end X_Gin
Also pass through the first current-limiting resistance R1The first end I0 feet of connection first and door U2, the output end connection first and door U2 of NAND gate U1
Second end I1 feet, first connect with the VCC feet of door U2+5V power supplys, GND feet ground connection.Second input terminal U_Gin passes through the second limit
Leakage resistance R2The first end I0 feet of connection second and door U3, the second end I1 of the output end connection second and door U3 of NAND gate U1
Foot, second connect+5V power supplys, GND feet ground connection with the VCC feet of door U3.First in the application is equal with door U2 and second and door U3
It is realized using MC74VHC1G08DTT1G chips.First connect third and door U4 with the output end of door U2 by the first filter circuit
First end I1 feet, the first filter circuit includes filter capacitor C0With filter resistance R0, filter capacitor C0With filter resistance R0And
Connection, one end of the parallel circuit connects external module with output end as the input terminal of the filter circuit, namely is separately connected the
The first end I1 feet of the output end and third and door U4 of one and door U2, filter capacitor C0With filter resistance R0Parallel circuit it is another
One end is grounded, and third and the second end NC feet of door U4 are hanging, and third connect the first of entire protection circuit with the output end of door U4
Output end X_Gout, third connect+5V power supplys, GND feet ground connection with the VCC feet of door U4.Second passes through the with the output end of door U3
The first end I1 feet of two filter circuits connection the 4th and door U5, the electricity of the circuit structure of the second filter circuit and the first filter circuit
Line structure is identical, the filter capacitor C in the second filter circuit0With filter resistance R0One end of parallel circuit be separately connected second
It is grounded with the first end I1 feet of door U5, the other end of parallel circuit with the output end of door U3 and the 4th, the 4th and the second of door U5
Hold NC feet hanging, the 4th connect the second output terminal U_Gout of entire protection circuit with the output end of door U5.In the application
Three are all made of the realization of 74LVC1G17GW chips with door U4 and the 4th and door U5.
The protection circuit further includes the necessary component that some constitute circuit in actual implementation, as shown in Figure 1, first and door
The first end I0 feet of U2 are also connected with the first pull down resistor R3, the first pull down resistor R3The other end be separately connected the first capacitance C1With
Second capacitance C2, the first capacitance C1With the second capacitance C2The other end be separately connected+5V power supplys, the first pull down resistor R3With first
Capacitance C1And the second capacitance C2Common end grounding.The first end I0 feet of second and door U3 are also connected with the second pull down resistor R4, the
Two pull down resistor R4Connect third capacitance C3, third capacitance C3Other end connection+5V power supplys, the second pull down resistor R4With third
Capacitance C3Common end grounding.4th capacitance C4With the 5th capacitance C5Series connection, one end connection third of the series circuit is with door U4's
The GND feet of GND feet, other end connection the 4th and door U5, the 4th capacitance C4With the 5th capacitance C5Common end grounding.
IGBT bridge arms disclosed in the present application prevent that the operation principle of straight-through protection circuit is：
In actual use, the first input end X_Gin of the protection circuit and the second input terminal U_Gin are separately connected MCU
(Microcontroller Unit, micro-control unit), the drive signal PWM1 that MCU drives upper bridge arm IGBT is from first
Input terminal X_Gin inputs, the drive signal PWM2 that MCU drives lower bridge arm IGBT are inputted from the second input terminal U_Gin.Appoint
All there are four types of different states may (1 indicates that high level, 0 indicate for two-way drive signals of the one moment MCU to upper and lower bridge arm IGBT
Low level)：
The first state may：PWM1=1, PWM2=1, drive signal danger is straight-through under this state；
Second of state may：PWM1=1, PWM2=0, drive signal is normal under this state；
The third state may：PWM1=0, PWM2=1, drive signal is normal under this state；
4th kind of state may：PWM1=0, PWM2=0, dead time is entered under this state, and drive signal is normal.
After two-way drive signal PWM1 and PWM2 enter protection circuit, sent respectively after NAND gate U1 carries out signal synthesis
Enter first and door U2 and second and door U3, then by first with door U2 and second and door U3 respectively by the signal after synthesizing with it is original
Drive signal carries out operation, and in above-mentioned four kinds of states are possible, the result of calculation of each logic gate is as follows：
In the first state is possible：NAND gate U1 synthesizes 0 to PWM1 and PWM2, first with door U2 to composite signal and
PWM1 synthesizes 0, and second synthesizes 0 with door U3 to composite signal and PWM2；
In second of state is possible：NAND gate U1 synthesizes 1 to PWM1 and PWM2, first with door U2 to composite signal and
PWM1 synthesizes 1, and second synthesizes 0 with door U3 to composite signal and PWM2；
It is possible in the third state：NAND gate U1 synthesizes 1 to PWM1 and PWM2, first with door U2 to composite signal and
PWM1 synthesizes 0, and second synthesizes 1 with door U3 to composite signal and PWM2；
It is possible in the 4th kind of state：NAND gate U1 synthesizes 1 to PWM1 and PWM2, first with door U2 to composite signal and
PWM1 synthesizes 0, and second synthesizes 0 with door U3 to composite signal and PWM2.
In this application, first the drive signal driven to upper bridge arm IGBT is exported with door U2, second with door U2's
Export the drive signal driven to lower bridge arm IGBT.Each state may under, the two-way drive signal PWM1 of input and
The two-way drive signal U2 and U3 that exports and driving abnormal conditions are respectively such as after PWM2 and driving abnormal conditions, logic circuit processing
Shown in following table：
Namely as can be seen from the above table, protection circuit realizes driving interlock function：
1, in the first state is possible, the two-way drive signal of input can cause upper and lower bridge arm IGBT danger straight-through, warp
After the operation relatively of overprotection circuit, the drive signal of upper and lower bridge arm IGBT all becomes low level, namely protection electricity from high level
Road has turned off the drive signal of IGBT in the case where danger is straight-through, and the danger for avoiding upper and lower bridge arm IGBT is straight-through；
2, second and third, four kinds of states may in, the drive signal of input is inherently normal, then through overprotection electricity
After the operation relatively on road, the drive signal of output and the drive signal of input are consistent, and are inputted as high level, and output is just height
Level inputs as low level, and output is just low level.
After the drive signal driven to upper bridge arm IGBT is exported by first with door U2, carried out by the first filter circuit
RC is filtered and waveform shaping, removes waveform rise and fall caused spike, burr in, finally passes through third and carries out electricity with door U3
It is exported by the first output end X_Gout after banishing greatly and is driven to upper bridge arm IGBT.The driving that lower bridge arm IGBT is driven
Signal, with after door U3 outputs, carries out RC and waveform shaping, removal waveform rise and fall are in by second by the second filter circuit
Caused spike, burr are finally exported by second output terminal U_Gout to lower bridge after the 4th carries out Current amplifier with door U4
Arm IGBT.
Above-described is only the preferred embodiment of the application, and the utility model is not limited to above example.It can manage
Solution, those skilled in the art do not depart from the utility model spirit and design under the premise of directly export or associate other
It improves and changes, be considered as being included within the scope of protection of this utility model.
Claims (2)
1. a kind of anti-straight-through protection circuit of IGBT bridge arms, which is characterized in that the first input end of the protection circuit and second defeated
Enter end be respectively used to connection micro-control unit MCU, MCU the drive signal of upper bridge arm IGBT is inputted from the first input end,
MCU inputs the drive signal of lower bridge arm IGBT from second input terminal, and the first output end connection of the protection circuit is simultaneously
It drives the upper bridge arm IGBT, second output terminal to connect and drives the lower bridge arm IGBT；
The first input end by the first current-limiting resistance connect NAND gate first end and first with the first end of door, it is described
Second input terminal by the second current-limiting resistance connect the NAND gate second end and second with the first end of door, it is described with it is non-
The output end of door be separately connected described first with the second end of door and described second with the second end of door；Described first is defeated with door
Outlet connects the first end of third and door by the first filter circuit, and the second end of the third and door is hanging, the third with
The output end of door connects the first output end of the protection circuit；Described second is connected with the output end of door by the second filter circuit
The first end of the 4th and door are connect, the described 4th is hanging with the second end of door, and the described 4th connect the protection with the output end of door
The second output terminal of circuit.
2. the anti-straight-through protection circuit of IGBT bridge arms according to claim 1, which is characterized in that first filter circuit and
The circuit structure of second filter circuit is identical, and each filter circuit includes filter capacitor and filter resistance, the filtered electrical
Hold and the filter resistance is in parallel, one end of the parallel circuit connects outside with output end as the input terminal of the filter circuit
Component, the other end ground connection of the parallel circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820597595.7U CN208094438U (en) | 2018-04-24 | 2018-04-24 | A kind of anti-straight-through protection circuit of IGBT bridge arms |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820597595.7U CN208094438U (en) | 2018-04-24 | 2018-04-24 | A kind of anti-straight-through protection circuit of IGBT bridge arms |
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| Publication Number | Publication Date |
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| CN208094438U true CN208094438U (en) | 2018-11-13 |
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| CN201820597595.7U Expired - Fee Related CN208094438U (en) | 2018-04-24 | 2018-04-24 | A kind of anti-straight-through protection circuit of IGBT bridge arms |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111725986A (en) * | 2020-07-18 | 2020-09-29 | 中煤科工集团重庆研究院有限公司 | Inverter upper and lower half-bridge direct connection prevention protection circuit |
| WO2021017862A1 (en) * | 2019-07-26 | 2021-02-04 | 卢驭龙 | Protection circuit and device |
| CN113141107A (en) * | 2021-04-27 | 2021-07-20 | 微山县微山湖微电子产业研究院有限公司 | Drive signal interlocking circuit |
| CN113839550A (en) * | 2021-09-29 | 2021-12-24 | 陕西省地方电力（集团）有限公司 | Bridge arm interlocking circuit suitable for SiC MOSFET |
| CN114459284A (en) * | 2021-12-24 | 2022-05-10 | 宜昌测试技术研究所 | Communication and transmission safety interlocking control method and system |
-
2018
- 2018-04-24 CN CN201820597595.7U patent/CN208094438U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021017862A1 (en) * | 2019-07-26 | 2021-02-04 | 卢驭龙 | Protection circuit and device |
| CN111725986A (en) * | 2020-07-18 | 2020-09-29 | 中煤科工集团重庆研究院有限公司 | Inverter upper and lower half-bridge direct connection prevention protection circuit |
| CN113141107A (en) * | 2021-04-27 | 2021-07-20 | 微山县微山湖微电子产业研究院有限公司 | Drive signal interlocking circuit |
| CN113839550A (en) * | 2021-09-29 | 2021-12-24 | 陕西省地方电力（集团）有限公司 | Bridge arm interlocking circuit suitable for SiC MOSFET |
| CN114459284A (en) * | 2021-12-24 | 2022-05-10 | 宜昌测试技术研究所 | Communication and transmission safety interlocking control method and system |
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| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Direct protection circuit is prevented to IGBT bridge arm Effective date of registration: 20191021 Granted publication date: 20181113 Pledgee: Agricultural Bank of China Limited by Share Ltd. Wuxi science and Technology Branch Pledgor: WUXI JACT ELECTRIC Co.,Ltd. Registration number: Y2019990000380 |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20181113 |
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| CF01 | Termination of patent right due to non-payment of annual fee |