CN208077990U - A kind of gradation printing crystal-silicon solar cell front electrode - Google Patents
A kind of gradation printing crystal-silicon solar cell front electrode Download PDFInfo
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- CN208077990U CN208077990U CN201820428898.6U CN201820428898U CN208077990U CN 208077990 U CN208077990 U CN 208077990U CN 201820428898 U CN201820428898 U CN 201820428898U CN 208077990 U CN208077990 U CN 208077990U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The utility model discloses a kind of crystal-silicon solar cell front electrodes of gradation printing,It is related to crystal-silicon solar cell manufacturing field,Crystal-silicon solar cell front electrode is printed more particularly to a kind of gradation,Slurry for solving existing solar cell front electrode using unified attribute,It is difficult to effective collection of compatible electric energy and reduces cost and firm sex chromosome mosaicism,The utility model includes the main grid that different attribute stresses,Secondary grid,Main grid is equipped with chimeric alignment mark point with secondary grid intersection,The junction at wherein main grid edge and secondary grid is equipped with the protrusion that the extension of width gradual change formula is stretched out,Gradual change or uniform formula width design can be used with the secondary grid at main grid auxiliary connection grid position,The utility model, which has, improves main grid and secondary grid linking accuracy,Reduce cost,Take into account shading and the photoelectric properties matching of conducting path,The advantages of promoting photoelectric conversion efficiency of the solar battery.
Description
Technical field
The utility model is related to crystal-silicon solar cell manufacturing fields, and in particular to a kind of gradation printing crystalline silicon sun electricity
Pond front electrode.
Background technology
It by semiconductor Si materials is substrate that crystal-silicon solar cell, which is a kind of, deposits the big of different doped layers and function film
Area PN junction is electronically formed with metallic conductor connection output light using photovoltaic device on its basis.Work more mature at present
Skill route is on single polysilicon chip surface after the process such as making herbs into wool, diffusion, etching, positive back side coating film, using silk screen
Printing technology forms positive and negative electrode.Screen printing electrode technique need to first make the halftone of specified electrode pattern, will design length and width and
Electrode slurry, on halftone screen cloth, is then uniformly scraped and is layered on by film development solidification by the positive back side conductive pattern of line number etc.
The halftone plane for making figure generates plastic deformation using scraping article extruding slurry fluid, and halftone returns net after being moved with scraping article
Process, the area of the pattern that slurry will be laid with from no film are bitten onto cell piece, and conductive electrode is formed.
Crystal-silicon solar cell front electrode is located at light-receiving surface, it is common to use high cost micron-sized powder Ag slurries printing master
Grid and secondary grid.Wherein secondary grid act as penetrating insulation protection film layer, form metal semiconductor Ohmic contact, collect substrate material production
Raw photo-generated carrier, by electric current convergence conduction to main grid；Main grid is meaningless for the electric current conduction of battery, while because of slurry glass
Glass body corrosiveness destroys certain area passive area, increases light-receiving surface shading shadow region, but in order to be compatible with subsequent components
Series welding technique needs optimization design figure, to ensure the one of weld strength, unit cells piece slurry consumption quality and cost of sizing agent
Fixed number amount main gate line.
The front electrode of crystal-silicon solar cell at present, it is main using single silk-screen printing technique disposably print drying,
Thermal sintering front main grid and secondary gate electrode, can only use the ginsengs such as single mesh number, line footpath, film thickness, yarn thickness in being printed due to single
Several halftones, and unified attribute slurry, effective collection, reduction shading and film layer that front electrode is difficult to compatible electric current be compound,
It reduces unit consumption quality, cost of sizing agent, improve numerous performances and the cost requirements such as solderability.
Utility model content
The technical problems to be solved in the utility model is：For the front electrode main grid for solving existing solar cell and secondary grid
Slurry attribute it is identical, it is difficult to compatible electric energy it is effective collect, reduce shading, film layer is compound, reduce cost, improves solderability
Problem, while difficulty is aligned in order to reduce main grid pair grid, electrical property is improved, the utility model provides a kind of gradation printing crystalline silicon
Solar cell front electrode, main grid and secondary gate figure are printed in Si substrate surfaces using different slurries respectively, and main grid is using low
Thickness, high adhesion force, low cost and high temperature resistant slurry print, and secondary grid are starched using high thickness, high-penetration, low-resistivity and low temperature
Material printing, main grid design gradual change with chimeric mark point exactitude position, the junction of main grid and secondary grid is respectively provided on secondary gate figure
Formula protrusion promotes electrical property to reduce alignment linking difficulty, can be ensured in identical sintering and weldering using the above design
The effective collected current of secondary grid under process conditions is connect, conduction resistance is reduced and promotes battery efficiency；The pulling force of main grid welding simultaneously is promoted, slurry
Material list consumption quality declines with material cost.
The technical solution of the utility model is：
A kind of solar cell front electrode of gradation printing, including several main grids and several secondary grid, between each main grid mutually
It is parallel, it is mutually parallel between each pair grid, and main grid is mutually perpendicular to secondary grid, main grid and secondary grid intersection are chimeric equipped at least three
Alignment mark point, convenient for exactitude position, the junction of the main grid edge and secondary grid is equipped with the extension stretching of width gradual change
Protrusion, the main grid width of projection portion position are greater than the secondary grid width at main grid auxiliary connection grid position, main grid and projection portion
The main grid average height of position will be less than secondary grid average height, with after the secondary grid width sintering at main grid auxiliary connection grid position
85um or less.
Further, the main grid is using high adhesion force, heat safe silver paste, and the pair grid are using high-penetration, low
The silver paste of resistivity.
Further, 8um is highly less than after the front electrode main grid printing-sintering.
Further, 15um is highly higher than after the front electrode pair grid printing-sintering.
Further, main grid alignment mark point chimeric with that should separately include at least three on secondary gate figure is convenient for essence
Really contraposition, wherein the maximum line footpath scale of chimeric alignment mark point is in 0.05~1.00mm, it is too low to be unfavorable for observing chimeric contraposition
The microcosmic linking image of mark point, excessively high waste slurry and four sides of observation take longer.
The junction design gradual change type protrusion of the main grid graphic edge and secondary grid, wherein main grid are located at and are connect with secondary grid
Tactile position outwardly protrudes convex equipped at least 0.15mm length extension stretching, identical main grid height, 100~26um gradual change width
Play part.
Average height value≤8um after the main grid and the firing of main grid projection portion position, to reduce unit cells piece just
Face electrode slurry consumes quality.
The secondary gate figure edge, in 85~22um, preferably uses gradual change type wide with the width at main grid link position
Average height value >=15um after degree design linking, gradual change or the firing of uniform formula pair grid, extends into main grid protruding end length and is not less than
0.02mm ensures current density conducting cross-sectional area, reduces power loss to promote cell photoelectric transfer efficiency.
The main grid width of the projection portion position is more than the secondary grid width at main grid auxiliary connection grid position, reduces alignment
The difficulty of linking.
In conclusion by adopting the above-described technical solution, the utility model has the beneficial effects that：
1. the utility model is using main grid using low thickness, high adhesion force, low cost and the printing of heat safe slurry, secondary grid
It is printed using high thickness, high-penetration, low-resistivity and low-temperature pulp, the setting of such different attribute main grid and secondary grid can be simultaneous
Effective collection of appearance electric energy, reduction shading, film layer is compound, reduces cost, improves the problem of solderability
2. the utility model may be implemented to lead equipped with multiple chimeric alignment mark points using the method for multiple spot plane positioning
The maximum line footpath scale of the accurate contraposition of grid and secondary grid, the chimeric alignment mark point is 0.05~1.00mm, convenient for observation
Save slurry again simultaneously.
3. the utility model is equipped with gradual change type protrusion in the junction of main grid and secondary grid, the main grid width of projection portion is big
In the width for the secondary grid for being connected to projection portion, difficulty and risk that main grid is directed at linking with secondary grid can be reduced, is optimized simultaneously
The power loss of conducting path reduces thermal losses, promotes cell photoelectric transfer efficiency.
4. the average height of main grid and projection portion is less than secondary grid average height in the utility model, cell piece slurry is reduced
Material consumption overall quality, has saved cost.
Description of the drawings
Fig. 1 is the utility model electrode structure at right side schematic diagram；
Fig. 2 be the utility model is related to main grid structural schematic diagram；
Fig. 3 be the utility model is related to secondary grid structure schematic diagram；
Fig. 4 is the chimeric alignment mark point and bulge-structure schematic diagram involved in the utility model embodiment one；
Fig. 5 is the chimeric alignment mark point and bulge-structure schematic diagram involved in the utility model embodiment two；
Description of the drawings：1, main grid；2, secondary grid；301, hollow chimeric alignment mark point；302, solid chimeric alignment mark point；
4, raised；5, frame is aligned.
Specific implementation mode
In order to which those skilled in the art more fully understand utility model, with reference to the accompanying drawings and examples to the utility model
It is described in detail.
Embodiment one
Crystal-silicon solar cell front electrode, including main grid 1 and secondary grid 2 are printed in a kind of gradation as shown in Figures 2 and 3,
It is mutually parallel between each main grid, is mutually parallel between each pair grid, and main grid is mutually perpendicular to secondary grid, dotted line is main grid printing contraposition
The solid printed areas of frame 5, main grid quadrangle is provided with the chimeric alignment mark point of hollow rectangle of 4 0.22mm × 0.46mm
301, the Filled Rectangle that secondary grid corresponding position is provided with 4 0.22mm × 0.46mm is fitted into alignment mark point 302, wherein chimeric pair
The maximum line footpath scale of position mark point is in 0.05~1.00mm, the too low microcosmic linking figure for being unfavorable for observing chimeric alignment mark point
Picture, excessively high waste slurry and four sides of observation take longer, first bite secondary grid slurry in corresponding Si substrates electricity when silk-screen printing
Pond on piece after screen-printing machine CCD detection camera lens determines four side of figure and center with chimeric alignment mark point 302, sends instruction in net
Motor transmission system is printed, adjusts halftone and scraping article central point X, Y, Z axis distance, cylinder activation drives scraping article by main grid paste figure
Accurately set is imprinted on the thin gate figure of Si substrates shape, observes the rectangular edges for being fitted into alignment mark point 301 and 302 after drying offline
Registration, the contraposition accuracy of detection main grid and secondary grid.
As a preferred embodiment, the main grid is coplanar seperated embedded structure with secondary grid, set on Si substrates by
Smooth surface.
As a preferred embodiment, the height of the main grid less than 8um, pulling force be more than 1.2N, sintering temperature >=
880 DEG C, the pair grid height is not less than 100nm higher than Si3N4 and SiO2 thicknesses of layers is penetrated after 15um, sintering, than contact electricity
Resistance rate is in 0.001~0.09 Ω cm2, 600~920 DEG C of sintering temperature.
As a preferred embodiment, main grid both sides are connected with a plurality of secondary grid, in main grid graphic edge and secondary grid
Junction be equipped with gradual change type protrusion 4 (Fig. 4), protrusion 4 sintering after with main grid connecting pin be 80 ± 5um maximum width end, most
Small width end is 50 ± 5um away from main grid distalmost end, overall length 0.7mm, average height 6um, secondary gate figure sintering back edge and master
Width at grid protrusion cohesive position is 42um, and 30um wide, average height 21um are slowly decremented in 15mm long ranges, is extended
Enter main grid protruding end length 0.1mm.
Embodiment two
As shown in figure 5, the present embodiment and embodiment one the difference is that, the chimeric alignment mark point 301,
302 be the circular fit alignment mark point of 4 diameter 0.5mm, when silk-screen printing first print main grid paste after print secondary grid slurry,
With the maximum width end that main grid connecting pin is 68 ± 3um, minimum widith end it is 48 ± 3um after described 4 sintering of gradual change type protrusion,
Overall length 1.0mm, average height 5um, secondary gate figure sintering back edge and the width at main grid protrusion cohesive position are uniform 40um
± 3um is remained unchanged, average height 19um, extends into main grid protruding end length 0.15mm.
The preferred embodiment of only the utility model described in this specification, above example are only to illustrate this
The technical solution rather than limitations of the present invention of utility model.All those skilled in the art are logical according to the design of the utility model
The available technical solution of logical analysis, reasoning, or a limited experiment is crossed, is all within the protection scope of the utility model.
Claims (8)
1. crystal-silicon solar cell front electrode, including main grid and secondary grid are printed in a kind of gradation, it is mutually parallel between each main grid, respectively
It is mutually parallel between secondary grid, and main grid is mutually perpendicular to secondary grid, it is characterised in that：The structure size of the main grid and secondary grid is not
Together, main grid uses different silver pastes, the edge of the main grid to be equipped with the protrusion for the width gradual change being connected with secondary grid from secondary grid,
The main grid and secondary grid intersection are equipped with the chimeric alignment mark point of at least three.
2. crystal-silicon solar cell front electrode is printed in a kind of gradation according to claim 1, it is characterised in that：The master
Grid are using high adhesion force, heat safe silver paste, and the pair grid are using high-penetration, the silver paste of low-resistivity.
3. crystal-silicon solar cell front electrode is printed in a kind of gradation according to claim 1, it is characterised in that：The master
The height of grid is less than 8um.
4. crystal-silicon solar cell front electrode is printed in a kind of gradation according to claim 1, it is characterised in that：The pair
The height of grid is higher than 15um.
5. crystal-silicon solar cell front electrode is printed in a kind of gradation according to claim 1, it is characterised in that：It is described convex
The height risen is identical as main grid, and length is at least 0.15mm, and width is gradient to the other end by the 100um close to main grid one end
26um。
6. crystal-silicon solar cell front electrode is printed in a kind of gradation according to claim 1, it is characterised in that：It is described convex
The average height risen is less than secondary grid average height, and the width of the protrusion is more than the secondary grid width of protrusion and secondary grid junction.
7. crystal-silicon solar cell front electrode is printed in a kind of gradation according to claim 1, it is characterised in that：The pair
The width that grid stretch into lobed interior point is 85~22um, and length is not less than 0.02mm.
8. crystal-silicon solar cell front electrode is printed in a kind of gradation according to claim 1, it is characterised in that：It is described embedding
The maximum width for closing alignment mark point is 0.05~1.00mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820428898.6U CN208077990U (en) | 2018-03-28 | 2018-03-28 | A kind of gradation printing crystal-silicon solar cell front electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820428898.6U CN208077990U (en) | 2018-03-28 | 2018-03-28 | A kind of gradation printing crystal-silicon solar cell front electrode |
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| Publication Number | Publication Date |
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| CN208077990U true CN208077990U (en) | 2018-11-09 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110660874A (en) * | 2019-09-30 | 2020-01-07 | 通威太阳能（合肥）有限公司 | Auxiliary grid electrode and solar cell |
| CN111055589A (en) * | 2019-12-23 | 2020-04-24 | 晋能光伏技术有限责任公司 | Solar cell printing screen |
| CN111098587A (en) * | 2019-12-30 | 2020-05-05 | 晋能光伏技术有限责任公司 | Printing screen for heterojunction solar cell and printing method thereof |
| CN111211200A (en) * | 2020-02-21 | 2020-05-29 | 浙江爱旭太阳能科技有限公司 | Method for step-by-step printing of multi-main-grid solar cell |
| WO2021098295A1 (en) * | 2019-11-20 | 2021-05-27 | 通威太阳能（成都）有限公司 | Screen printing plate structure of monocrystalline silicon solar cell |
-
2018
- 2018-03-28 CN CN201820428898.6U patent/CN208077990U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110660874A (en) * | 2019-09-30 | 2020-01-07 | 通威太阳能（合肥）有限公司 | Auxiliary grid electrode and solar cell |
| WO2021098295A1 (en) * | 2019-11-20 | 2021-05-27 | 通威太阳能（成都）有限公司 | Screen printing plate structure of monocrystalline silicon solar cell |
| CN111055589A (en) * | 2019-12-23 | 2020-04-24 | 晋能光伏技术有限责任公司 | Solar cell printing screen |
| CN111098587A (en) * | 2019-12-30 | 2020-05-05 | 晋能光伏技术有限责任公司 | Printing screen for heterojunction solar cell and printing method thereof |
| CN111211200A (en) * | 2020-02-21 | 2020-05-29 | 浙江爱旭太阳能科技有限公司 | Method for step-by-step printing of multi-main-grid solar cell |
| CN111211200B (en) * | 2020-02-21 | 2023-01-13 | 浙江爱旭太阳能科技有限公司 | Method for step-by-step printing of multi-main-grid solar cell |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191112 Address after: 620000 no.8-1, Xuexue Road, Xiuwen Town, Dongpo District, Meishan City, Sichuan Province Patentee after: Tongwei Solar Energy (Meishan) Co., Ltd. Address before: 610255 six phase of the Industrial Development Zone of Southwest Chengdu Airport Economic Development Zone, Sichuan Patentee before: Tongwei solar (Chengdu) Co., Ltd. |
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| TR01 | Transfer of patent right |