CN208077039U - A kind of ultrasonic atomizatio piece working control circuit - Google Patents
A kind of ultrasonic atomizatio piece working control circuit Download PDFInfo
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- CN208077039U CN208077039U CN201820543687.7U CN201820543687U CN208077039U CN 208077039 U CN208077039 U CN 208077039U CN 201820543687 U CN201820543687 U CN 201820543687U CN 208077039 U CN208077039 U CN 208077039U
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Abstract
The utility model discloses a kind of ultrasonic atomizatio piece working control circuits, including the first power supply circuit, the second power supply circuit, controller, totem-pote circuit, metal-oxide-semiconductor switching circuit and LC oscillating circuits, the power end of first power supply circuit and totem-pote circuit connects, second power supply circuit is connect with the power end of LC oscillating circuits, and the output end of controller passes sequentially through totem-pote circuit, metal-oxide-semiconductor switching circuit, LC oscillating circuits and connect with ultrasonic atomizatio piece；Further include the driving circuit that the high level of the PWM wave for exporting controller is raised, the output end of controller is connected by the input terminal of driving circuit and totem-pote circuit.Metal-oxide-semiconductor operating voltage in the utility model is higher, work efficiency is high, temperature is low, and metal-oxide-semiconductor is avoided to be burned because temperature is excessively high；High voltage pulse peak value can be made to become flat, be conducive to that metal-oxide-semiconductor is protected not to be broken down by high-voltage, metal-oxide-semiconductor is avoided to be broken down by high-voltage because of unloaded operation, prolong the service life, reduce use cost.
Description
Technical field
The utility model belongs to electronic cigarette technical field, more particularly to a kind of ultrasonic atomizatio piece working control circuit.
Background technology
As shown in Figure 1, existing ultrasonic atomizatio piece working control circuit includes the first power supply circuit 1, the second power supply circuit
2, controller 3, totem-pote circuit 11, metal-oxide-semiconductor switching circuit 4 and LC oscillating circuits 5, wherein the first power supply circuit 1 and totem
The power end of circuit 11 is electrically connected, and the second power supply circuit 2 is electrically connected with the power end of LC oscillating circuits 5, the output end of controller 3
Totem-pote circuit 11, metal-oxide-semiconductor switching circuit 4, LC oscillating circuits 5 is passed sequentially through to be electrically connected with ultrasonic atomizatio piece J.It is first when work
First by 3 output pwm signal of controller to totem-pote circuit 11, then by the driving metal-oxide-semiconductor of totem-pote circuit 11 switching circuit 4
Metal-oxide-semiconductor works, final that LC oscillating circuits 5 is driven to drive ultrasonic atomizatio piece J oscillatory works.
Existing ultrasonic atomizatio piece working control circuit has the disadvantages that：
First, controller 3 is directly electrically connected with totem-pote circuit 11, and controller 3 exports a pwm signal to totem electricity
Road 11.Since the PWM wave voltage value that controller 3 exports is relatively low（Only 5V or lower）, and the exportable electricity of totem-pote circuit 11
Pressure is generally higher than 5V（Up to 12V）, thus the voltage exported after totem-pote circuit 11 only has 5V（Select low-voltage output）,
Metal-oxide-semiconductor operating voltage i.e. in supply metal-oxide-semiconductor switching circuit 4 is relatively low, thus causes metal-oxide-semiconductor working efficiency is low to cause metal-oxide-semiconductor sheet
The temperature of body is high, causes metal-oxide-semiconductor to be easily burned, influences electronic cigarette service life and cost.
The high voltage pulse peak value that second, LC oscillating circuit 5 generates（Especially in unloaded operation）Electricity easily is switched to metal-oxide-semiconductor
Metal-oxide-semiconductor in road 4 causes to impact, and metal-oxide-semiconductor is caused to be broken down by high-voltage and damage, and influences service life and cost.
Invention content
In existing ultrasonic atomizatio piece working control circuit, the metal-oxide-semiconductor operating voltage in metal-oxide-semiconductor switching circuit is relatively low, MOS
The low temperature for causing metal-oxide-semiconductor itself of pipe working efficiency is high, to which metal-oxide-semiconductor is easily burned；The high voltage arteries and veins that LC oscillating circuits generate
Rush peak value（Especially in unloaded operation）Easily the metal-oxide-semiconductor in metal-oxide-semiconductor switching circuit is caused to impact, metal-oxide-semiconductor is caused to be hit by high pressure
It wears and damages, influence service life and cost.The purpose of this utility model is that in view of the above shortcomings of the prior art, providing
A kind of ultrasonic atomizatio piece working control circuit improved, the metal-oxide-semiconductor work in metal-oxide-semiconductor switching circuit is driven with higher voltage
Make, making metal-oxide-semiconductor, work efficiency is high, to keep the temperature in the metal-oxide-semiconductor course of work low, metal-oxide-semiconductor is avoided to be burnt because temperature is excessively high
It is bad；Meanwhile, it is capable to make high voltage pulse peak value drag down and become flat, is conducive to that metal-oxide-semiconductor is protected not to be broken down by high-voltage, avoids
Metal-oxide-semiconductor is broken down by high-voltage because of unloaded operation, prolongs the service life, and reduces use cost.
In order to solve the above technical problems, technical solution used by the utility model is：
A kind of ultrasonic atomizatio piece working control circuit, including the first power supply circuit, the second power supply circuit, controller, totem
Column circuit, metal-oxide-semiconductor switching circuit and LC oscillating circuits, wherein the first power supply circuit is electrically connected with the power end of totem-pote circuit,
Second power supply circuit is electrically connected with the power end of LC oscillating circuits, and the output end of controller passes sequentially through totem-pote circuit, metal-oxide-semiconductor
Switching circuit, LC oscillating circuits are electrically connected with ultrasonic atomizatio piece；It is structurally characterized in that further include PWM for exporting controller
The output end of the driving circuit that the high level of wave is raised, controller is electrically connected by the input terminal of driving circuit and totem-pote circuit
It connects.
It, can be by driving circuit by PWM wave when controller exports PWM wave a to driving circuit by above structure
High level raise, to driving circuit export to totem-pote circuit PWM wave have higher high value（Generally 8V ~
20V, preferred voltage value are 10V ~ 12V）, finally totem-pote circuit is enable to export higher voltage to drive metal-oxide-semiconductor to switch
Metal-oxide-semiconductor in circuit reduces so that the metal-oxide-semiconductor fast conducting in metal-oxide-semiconductor switching circuit, improves the working efficiency of metal-oxide-semiconductor
The heat generated in the metal-oxide-semiconductor course of work avoids metal-oxide-semiconductor from being burned because temperature is excessively high.
Further, further include the absorbing circuit being electrically connected with LC oscillating circuits.
By above structure, due to provided with the absorbing circuit being electrically connected with LC oscillating circuits, to which absorbing circuit can
Absorb the high voltage pulse peak value that LC oscillating circuits generate（Especially in unloaded operation）, high voltage pulse peak value can be made to drag down
And become flat, be conducive to that metal-oxide-semiconductor is protected not to be broken down by high-voltage, metal-oxide-semiconductor is avoided, by high electrical breakdown, to extend due to unloaded operation
Service life reduces use cost.
Further, further include the leadage circuit being electrically connected with LC oscillating circuits.
By above structure, transient voltage can be shorted to ground by leadage circuit, to protect metal-oxide-semiconductor switching circuit.
The metal-oxide-semiconductor switching circuit includes metal-oxide-semiconductor, first resistor and second resistance, totem as a preferred method,
The output end of circuit is electrically connected by first resistor with the grid of metal-oxide-semiconductor, and an end of second resistance is connected on first resistor and metal-oxide-semiconductor
Grid between, the other end of second resistance is grounded；The drain electrode of metal-oxide-semiconductor is electrically connected by LC oscillating circuits with ultrasonic atomizatio piece；
The source electrode of metal-oxide-semiconductor is grounded.
The LC oscillating circuits include inductance and the first capacitance as a preferred method, and the drain electrode of metal-oxide-semiconductor passes through inductance
It is electrically connected with the second power supply circuit, the drain electrode of metal-oxide-semiconductor is also electrically connected by the first capacitance with one end of ultrasonic atomizatio piece, ultrasonic mist
Change the other end ground connection of piece.
As a preferred method, the absorbing circuit include the first diode, the second capacitance and 3rd resistor, the one or two
The anode of pole pipe is connected between the drain electrode of metal-oxide-semiconductor and the first capacitance, and one end of the second capacitance and 3rd resistor is connected on the second confession
Between circuit and inductance, the second capacitance is electrically connected with the cathode of the first diode with the other end of 3rd resistor.
The leadage circuit includes the second diode as a preferred method, and the cathode of the second diode is connected on metal-oxide-semiconductor
Drain electrode and the first capacitance between, the anode of the second diode is electrically connected with the source electrode of metal-oxide-semiconductor；Second diode is transient voltage
Inhibit diode.
Further, further include current detection circuit, test side and the metal-oxide-semiconductor switching circuit of current detection circuit are electrically connected
It connects, the output end of current detection circuit is electrically connected with the input terminal of controller.
Current detection circuit is used to detect the operating current of ultrasonic atomizatio piece, the electricity that two adjacent reception of controller pair arrives
Flow valuve is compared, and catches complete resonance point of the maximum current value as ultrasonic atomizatio piece, then controller control metal-oxide-semiconductor switch
Circuit is with the rate-adaptive pacemaker needed for the complete resonance point, so that ultrasonic atomizatio piece is in a complete resonant condition.Electric current
Detection circuit constantly detects, to ultrasonic atomizatio piece efficient operation always.When the current value detected is more than inside controller in advance
If signal value when, controller controls entire circuit and is stopped, and circuit is protected.Ultrasonic atomizatio piece is constantly in resonance shape
State, work efficiency is high for ultrasonic atomizatio piece, amount of smoke is big, circuit loss is low, corresponding to avoid damaging because of circuit board heating
Electronic component, circuit stability is reliable and secure.
Further, further include current detection circuit, test side and the metal-oxide-semiconductor switching circuit of current detection circuit are electrically connected
It connects, the output end of current detection circuit is electrically connected with the input terminal of controller；The current detection circuit includes the 4th resistance, the
Five resistance and third capacitance, the source electrode of metal-oxide-semiconductor by the 5th resistance eutral grounding, an end of the 4th resistance be connected on the source electrode of metal-oxide-semiconductor with
Between 5th resistance, for the other end of the 4th resistance by third capacity earth, the input of controller terminates at the 4th resistance and
Between three capacitances.
In above-mentioned current detection circuit, the 5th resistance is current sense resistor, third capacitance and the composition filter of the 4th resistance
Wave circuit, current detecting accuracy are high.
As a preferred method, the totem-pote circuit include NPN type triode, PNP type triode, the 4th capacitance and
6th resistance；One end of 6th resistance, the base stage of NPN type triode, the base stage of PNP type triode with the output of driving circuit
End electrical connection；One end of 4th capacitance, the collector of NPN type triode are electrically connected with the first power supply circuit；6th resistance it is another
One end, the other end of the 4th capacitance, PNP type triode collector be grounded；The emitter of NPN type triode, three pole of positive-negative-positive
The emitter of pipe is electrically connected with the control terminal of metal-oxide-semiconductor switching circuit.
The driving circuit includes driving chip and the 7th resistance as a preferred method, the output end of controller with
The input terminal of driving chip is electrically connected, and the output end of driving chip is electrically connected with the input terminal of totem-pote circuit, the 7th resistance
One end is connected between the output end of controller and the input terminal of driving chip, the other end ground connection of the 7th resistance.
Compared with prior art, the voltage needed for the driving metal-oxide-semiconductor work in the utility model is higher, to promote MOS
Work efficiency is high for pipe, keeps the temperature in the metal-oxide-semiconductor course of work low, metal-oxide-semiconductor is avoided to be burned because temperature is excessively high；Meanwhile, it is capable to
So that high voltage pulse peak value is dragged down and become flat, be conducive to that metal-oxide-semiconductor is protected not to be broken down by high-voltage, avoids metal-oxide-semiconductor because of unloaded work
Make and be broken down by high-voltage, prolong the service life, reduces use cost.
Description of the drawings
Fig. 1 is the frame assumption diagram of existing ultrasonic atomizatio piece working control circuit.
Fig. 2 is the frame assumption diagram of one embodiment of the utility model.
Fig. 3 is the circuit diagram of one embodiment of the utility model.
Wherein, 1 is the first power supply circuit, and 2 be the second power supply circuit, and 3 devices in order to control, 4 be metal-oxide-semiconductor switching circuit, and 5 be LC
Oscillating circuit, 6 be absorbing circuit, and 7 be leadage circuit, and 8 be current detection circuit, and J is ultrasonic atomizatio piece, and Q1 is three pole of NPN type
Pipe, Q2 are metal-oxide-semiconductor, and Q3 is PNP type triode, and R1 is first resistor, and R2 is second resistance, and R3 is 3rd resistor, and R4 is the 4th
Resistance, R5 are the 5th resistance, and R6 is the 6th resistance, and R7 is the 7th resistance, and L is inductance, and U is driving chip, and C1 is the first capacitance,
C2 is the second capacitance, and C3 is third capacitance, and C4 is the 4th capacitance, and D1 is the first diode, and D2 is the second diode.
Specific implementation mode
As shown in Figures 2 and 3, an embodiment of the utility model includes the first power supply circuit 1, the second power supply circuit 2, control
Device 3, totem-pote circuit 11, metal-oxide-semiconductor switching circuit 4 and LC oscillating circuits 5 processed, wherein the first power supply circuit 1 and totem-pote circuit
11 power end electrical connection, the second power supply circuit 2 are electrically connected with the power end of LC oscillating circuits 5, and the output end of controller 3 is successively
It is electrically connected with ultrasonic atomizatio piece J by totem-pote circuit 11, metal-oxide-semiconductor switching circuit 4, LC oscillating circuits 5；Further include for that will control
The driving circuit 12 that the high level for the PWM wave that device 3 processed exports is raised, the output end of controller 3 pass through driving circuit 12 and totem
The input terminal of column circuit 11 is electrically connected.
The utility model further includes the absorbing circuit 6 being electrically connected with LC oscillating circuits 5.
The utility model further includes the leadage circuit 7 being electrically connected with LC oscillating circuits 5.
The metal-oxide-semiconductor switching circuit 4 include metal-oxide-semiconductor Q2, first resistor R1 and second resistance R2, totem-pote circuit 11 it is defeated
Outlet is electrically connected by first resistor R1 with the grid of metal-oxide-semiconductor Q2, and an end of second resistance R2 is connected on first resistor R1 and metal-oxide-semiconductor
Between the grid of Q2, the other end of second resistance R2 is grounded；The drain electrode of metal-oxide-semiconductor Q2 passes through LC oscillating circuits 5 and ultrasonic atomizatio piece J
Electrical connection；The source electrode of metal-oxide-semiconductor Q2 is grounded.First resistor R1 is anti-interference resistance, can reduce the interference of characteristic damping oscillator signal.The
Two resistance R2 are pull down resistor.
The LC oscillating circuits 5 include that the drain electrode of inductance L and the first capacitance C1, metal-oxide-semiconductor Q2 are powered by inductance L and second
Circuit 2 is electrically connected, and the drain electrode of metal-oxide-semiconductor Q2 is also electrically connected by the first capacitance C1 with one end of ultrasonic atomizatio piece J, ultrasonic atomizatio piece
The other end of J is grounded.
The absorbing circuit 6 includes the first diode D1, the second capacitance C2 and 3rd resistor R3, the sun of the first diode D1
Pole is connected between the drain electrode of metal-oxide-semiconductor Q2 and the first capacitance C1, and one end of the second capacitance C2 and 3rd resistor R3 is connected on the second confession
Between circuit 2 and inductance L, the cathode of the other end of the second capacitance C2 and 3rd resistor R3 with the first diode D1 is electrically connected
It connects.
The cathode of the leadage circuit 7 including the second diode D2, the second diode D2 is connected on the drain electrode of metal-oxide-semiconductor Q2 and the
Between one capacitance C1, the anode of the second diode D2 is electrically connected with the source electrode of metal-oxide-semiconductor Q2；Second diode D2 constrains for transient electrical
Diode processed.
The utility model further includes current detection circuit 8, test side and 4 electricity of metal-oxide-semiconductor switching circuit of current detection circuit 8
Connection, the output end of current detection circuit 8 are electrically connected with the input terminal of controller 3.
The current detection circuit 8 includes the 4th resistance R4, the 5th resistance R5 and third capacitance C3, the source electrode of metal-oxide-semiconductor Q2
By the 5th resistance R5 ground connection, an end of the 4th resistance R4 is connected between the source electrode of metal-oxide-semiconductor Q2 and the 5th resistance R5, the 4th resistance
The other end of R4 is grounded by third capacitance C3, and the input of controller 3 terminates between the 4th resistance R4 and third capacitance C3.
The totem-pote circuit 11 includes NPN type triode Q1, PNP type triode Q3, the 4th capacitance C4 and the 6th resistance
R6；One end of 6th resistance R6, the base stage of NPN type triode Q1, the base stage of PNP type triode Q3 are defeated with driving circuit 12
Outlet is electrically connected；One end of 4th capacitance C4, the collector of NPN type triode Q1 are electrically connected with the first power supply circuit 1；6th electricity
Resistance the other end of R6, the other end of the 4th capacitance C4, PNP type triode Q3 collector be grounded；The hair of NPN type triode Q1
Emitter-base bandgap grading, PNP type triode Q3 emitter be electrically connected with the control terminal of metal-oxide-semiconductor switching circuit 4.NPN type triode Q1 and PNP
Type triode Q3 forms totem.6th resistance R6 is pull down resistor.4th capacitance C4 is filter capacitor.
The driving circuit 12 includes driving chip U（MOSDRIVER）With the 7th resistance R7, the output end of controller 3 with
The input terminal of driving chip U is electrically connected, and the output end of driving chip U is electrically connected with the input terminal of totem-pote circuit 11, the 7th electricity
An end of resistance R7 is connected between the output end of controller 3 and the input terminal of driving chip U, the other end ground connection of the 7th resistance R7.
7th resistance R7 is pull down resistor.
It is in the PWM1 wave height level and VCC the two that driving chip U is exported due to the voltage value that totem-pote circuit 11 exports
Smaller value, so most preferred scheme is that the PWM wave high level that controller 3 exports is raised to VCC by driving chip U, even if
It obtains PWM1 wave height level and is equal to VCC, the voltage value that totem-pote circuit 11 exports has reached maximum value.
The power end of driving chip U is electrically connected with the first power supply circuit 1, the ground terminal ground connection of driving chip U.
Ultrasonic atomizatio piece J in the present embodiment is solid piezoelectric ceramic atomizer patch.Meanwhile the utility model can be also used in
On the component or circuit of similar piezoceramic structures.
The operation principle of the utility model is as follows：
It, can be by driving circuit 12 by voltage value liter when controller 3 exports PWM wave to the driving circuit 12 of a 5V
Height, to exportable higher voltage（Generally 8V ~ 20V, preferred voltage value are 10V ~ 12V）To totem-pote circuit 11 so that
Totem-pote circuit 11 exports higher voltage to drive the metal-oxide-semiconductor in metal-oxide-semiconductor switching circuit 4, so that metal-oxide-semiconductor switching circuit
In 4 metal-oxide-semiconductor fast conducting.
When metal-oxide-semiconductor switching circuit 4 is connected, the inductance L charging energy-storings in LC oscillating circuits 5, when metal-oxide-semiconductor switching circuit 4 is disconnected
When opening, inductance L electric discharges generate high voltage, and while inductance L discharges, electric current lease making crosses two-way circuit, and the first via is to absorb electricity
Road 6, the second tunnel are leadage circuits 7：
When the electric current of inductance L electric discharges passes through absorbing circuit 6, the first diode D1 is first passed around, using by the second electricity
The RC circuits for holding C2 and 3rd resistor R3 compositions, finally return inductance L, form a circuit in this way.According to the π of formula F=1/2
RC, when the frequency of drive signal is less than the π R3C2 of F=1/2, the impedance of absorbing circuit 6 is R3, absorbs part energy；Work as driving
When the frequency of signal is higher than the π R3C2 of F=1/2, the impedance of absorbing circuit 6 is the impedance of the second capacitance C2 and 3rd resistor R3, is absorbed
The energy that circuit 6 absorbs is more.In short, no matter when absorbing circuit 6 can absorb idler circuit or load circuit
In part energy LC oscillating circuits 5 are made by the second absorbing circuit 6 especially when unloaded false triggering makes circuit turn-on
The high voltage peak of generation drags down and more gentle, impact of the reduction high voltage to metal-oxide-semiconductor Q2 in metal-oxide-semiconductor switching circuit 4.
When the electric current of unloaded inductance L electric discharges passes through the transient voltage suppressor of leadage circuit 7, due to transient electrical
The oppressive diode response time processed is very fast, when high pressure is more than the inhibition voltage of transient voltage suppressor, transient electrical
Avalanche breakdown can be occurred by constraining diode processed, while be supplied to one super-low impedance access of immediate current, and immediate current is made to pass through
Transient voltage suppressor short circuit is connected to ground, to avoid protected component.High voltage is let out before disappearance simultaneously
It protects always in a blanking voltage on electric discharge road 7.After moment high impulse disappears, transient voltage suppressor replys high resistant again
State.
After two above circuit, LC oscillating circuits 5 work normally, and peak value is also within the scope of circuit design.
The experiment proved that when unloaded, press power button, occur in the time of general several nanoseconds peak-to-peak value be 105V ~
The high pressure of 400V, the high-voltage value that metal-oxide-semiconductor Q2 is born is 90V ~ 100V, so this high pressure alreadys exceed bearing for metal-oxide-semiconductor Q2
Voltage value.If without absorbing circuit 6 and leadage circuit 7, metal-oxide-semiconductor Q2 is breakdown to be burnt out；If being provided with absorbing circuit 6 and letting out
It discharges road 7, the resistance capacitance in absorbing circuit 6 absorbs part energy, the transient voltage suppressor in leadage circuit 7
Pressure voltage is 70V ~ 90V, and when having high voltage in LC oscillating circuits 5, transient voltage suppressor fast reaction simultaneously makes itself
Impedance it is minimum, so that high voltage is directly conducting to ground wire, to play the role of protecting metal-oxide-semiconductor Q2.
The embodiments of the present invention are described above in conjunction with attached drawing, but the utility model is not limited to
The specific implementation mode stated, the above mentioned embodiment is only schematical, rather than limitation, this field it is common
Technical staff is not departing from the utility model aims and scope of the claimed protection situation under the enlightenment of the utility model
Under, many forms can be also made, these are belonged within the scope of protection of the utility model.
Claims (11)
1. a kind of ultrasonic atomizatio piece working control circuit, including the first power supply circuit（1）, the second power supply circuit（2）, controller
（3）, totem-pote circuit（11）, metal-oxide-semiconductor switching circuit（4）With LC oscillating circuits（5）, wherein the first power supply circuit（1）With totem
Column circuit（11）Power end electrical connection, the second power supply circuit（2）With LC oscillating circuits（5）Power end electrical connection, controller
（3）Output end pass sequentially through totem-pote circuit（11）, metal-oxide-semiconductor switching circuit（4）, LC oscillating circuits（5）With ultrasonic atomizatio piece
（J）Electrical connection；It is characterized in that, further including for by controller（3）The driving circuit that the high level of the PWM wave of output is raised
（12）, controller（3）Output end pass through driving circuit（12）With totem-pote circuit（11）Input terminal electrical connection.
2. ultrasonic atomizatio piece working control circuit as described in claim 1, which is characterized in that further include and LC oscillating circuits
（5）The absorbing circuit of electrical connection（6）.
3. ultrasonic atomizatio piece working control circuit as claimed in claim 2, which is characterized in that further include and LC oscillating circuits
（5）The leadage circuit of electrical connection（7）.
4. ultrasonic atomizatio piece working control circuit as claimed in claim 3, which is characterized in that the metal-oxide-semiconductor switching circuit（4）
Including metal-oxide-semiconductor Q2, first resistor R1 and second resistance R2, totem-pote circuit（11）Output end pass through first resistor R1 and MOS
The grid of pipe Q2 is electrically connected, and an end of second resistance R2 is connected between first resistor R1 and the grid of metal-oxide-semiconductor Q2, second resistance R2
The other end ground connection；The drain electrode of metal-oxide-semiconductor Q2 passes through LC oscillating circuits（5）With ultrasonic atomizatio piece（J）Electrical connection；The source of metal-oxide-semiconductor Q2
Pole is grounded.
5. ultrasonic atomizatio piece working control circuit as claimed in claim 4, which is characterized in that the LC oscillating circuits（5）Packet
Inductance L and the first capacitance C1 are included, the drain electrode of metal-oxide-semiconductor Q2 passes through inductance L and the second power supply circuit（2）Electrical connection, the leakage of metal-oxide-semiconductor Q2
Pole also passes through the first capacitance C1 and ultrasonic atomizatio piece（J）One end electrical connection, ultrasonic atomizatio piece（J）The other end ground connection.
6. ultrasonic atomizatio piece working control circuit as claimed in claim 5, which is characterized in that the absorbing circuit（6）Including
The anode of first diode D1, the second capacitance C2 and 3rd resistor R3, the first diode D1 are connected on the drain electrode and first of metal-oxide-semiconductor Q2
Between capacitance C1, one end of the second capacitance C2 and 3rd resistor R3 is connected on the second power supply circuit（2）Between inductance L, second
Capacitance C2 is electrically connected with the cathode of the first diode D1 with the other end of 3rd resistor R3.
7. ultrasonic atomizatio piece working control circuit as claimed in claim 5, which is characterized in that the leadage circuit（7）Including
The cathode of second diode D2, the second diode D2 is connected between the drain electrode of metal-oxide-semiconductor Q2 and the first capacitance C1, the second diode D2
Anode be electrically connected with the source electrode of metal-oxide-semiconductor Q2；Second diode D2 is transient voltage suppressor.
8. ultrasonic atomizatio piece working control circuit as described in any one of claim 1 to 7, which is characterized in that further include electric current
Detection circuit（8）, current detection circuit（8）Test side and metal-oxide-semiconductor switching circuit（4）Electrical connection, current detection circuit（8）'s
Output end and controller（3）Input terminal electrical connection.
9. such as claim 4 to 7 any one of them ultrasonic atomizatio piece working control circuit, which is characterized in that further include electric current
Detection circuit（8）, current detection circuit（8）Test side and metal-oxide-semiconductor switching circuit（4）Electrical connection, current detection circuit（8）'s
Output end and controller（3）Input terminal electrical connection；The current detection circuit（8）Including the 4th resistance R4, the 5th resistance R5
With third capacitance C3, for the source electrode of metal-oxide-semiconductor Q2 by the 5th resistance R5 ground connection, an end of the 4th resistance R4 is connected on the source of metal-oxide-semiconductor Q2
Between pole and the 5th resistance R5, the other end of the 4th resistance R4 is grounded by third capacitance C3, controller（3）Input terminate at
Between 4th resistance R4 and third capacitance C3.
10. ultrasonic atomizatio piece working control circuit as described in any one of claim 1 to 7, which is characterized in that the totem
Circuit（11）Including NPN type triode Q1, PNP type triode Q3, the 4th capacitance C4 and the 6th resistance R6；The one of 6th resistance R6
End, the base stage of NPN type triode Q1, the base stage of PNP type triode Q3 are and driving circuit（12）Output end electrical connection；4th
One end of capacitance C4, the collector of NPN type triode Q1 and the first power supply circuit（1）Electrical connection；The other end of 6th resistance R6,
The other end of 4th capacitance C4, the collector of PNP type triode Q3 are grounded；Emitter, the positive-negative-positive three of NPN type triode Q1
The emitter of pole pipe Q3 with metal-oxide-semiconductor switching circuit（4）Control terminal electrical connection.
11. ultrasonic atomizatio piece working control circuit as described in any one of claim 1 to 7, which is characterized in that the driving electricity
Road（12）Including driving chip U and the 7th resistance R7, controller（3）Output end be electrically connected with the input terminal of driving chip U, drive
The output end and totem-pote circuit of dynamic chip U（11）Input terminal electrical connection, an end of the 7th resistance R7 is connected to controller（3）'s
Between output end and the input terminal of driving chip U, the other end of the 7th resistance R7 is grounded.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820543687.7U CN208077039U (en) | 2018-04-17 | 2018-04-17 | A kind of ultrasonic atomizatio piece working control circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820543687.7U CN208077039U (en) | 2018-04-17 | 2018-04-17 | A kind of ultrasonic atomizatio piece working control circuit |
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| CN208077039U true CN208077039U (en) | 2018-11-09 |
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| CN201820543687.7U Active CN208077039U (en) | 2018-04-17 | 2018-04-17 | A kind of ultrasonic atomizatio piece working control circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109363245A (en) * | 2018-11-20 | 2019-02-22 | 深圳瀚星翔科技有限公司 | Ultrasonic electronic atomization circuit and ultrasonic electronic cigarette |
| CN112039318A (en) * | 2020-09-21 | 2020-12-04 | 江苏信息职业技术学院 | Novel MOS tube isolation driving circuit |
| WO2021093705A1 (en) * | 2019-11-11 | 2021-05-20 | 湖南中烟工业有限责任公司 | Working circuit of ultrasonic atomizer and ultrasonic electronic cigarette |
-
2018
- 2018-04-17 CN CN201820543687.7U patent/CN208077039U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109363245A (en) * | 2018-11-20 | 2019-02-22 | 深圳瀚星翔科技有限公司 | Ultrasonic electronic atomization circuit and ultrasonic electronic cigarette |
| WO2021093705A1 (en) * | 2019-11-11 | 2021-05-20 | 湖南中烟工业有限责任公司 | Working circuit of ultrasonic atomizer and ultrasonic electronic cigarette |
| CN112039318A (en) * | 2020-09-21 | 2020-12-04 | 江苏信息职业技术学院 | Novel MOS tube isolation driving circuit |
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