CN207967599U - A kind of multi-layer high-voltage controllable silicon in serial connection structure - Google Patents
A kind of multi-layer high-voltage controllable silicon in serial connection structure Download PDFInfo
- Publication number
- CN207967599U CN207967599U CN201820133918.7U CN201820133918U CN207967599U CN 207967599 U CN207967599 U CN 207967599U CN 201820133918 U CN201820133918 U CN 201820133918U CN 207967599 U CN207967599 U CN 207967599U
- Authority
- CN
- China
- Prior art keywords
- voltage
- aluminium sheet
- fixed
- voltage thyristor
- thyristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Thyristors (AREA)
Abstract
The utility model is related to a kind of multi-layer high-voltage controllable silicon in serial connection structures, including fixed top plate and fixed bottom plate, multiple high-voltage thyristor series mould sets being made of several concatenated discharge switch components stacked on top of one another, setting stacked on top of one another after the high-voltage thyristor series mould set series connection are equipped between the fixed top plate and fixed bottom plate；The high-voltage thyristor series mould set is fixed by double-threaded screw between any two.Several concatenated discharge switch components are stacked the high-voltage thyristor series mould set for being integrated into an Integral-structure type by the multi-layer high-voltage controllable silicon in serial connection structure of the utility model；It is fixed two-by-two again between high-voltage thyristor series mould set, reliable fixation, can significantly extend silicon-controlled service life while enabling discharge switch component uniform force.
Description
Technical field
The utility model is related to a kind of multi-layer high-voltage controllable silicon in serial connection structures, belong to high voltage electrical apparatus technical field.
Background technology
Extra-high voltage direct-current electric discharge is a long-standing technical barrier, at present in " air reactor turn to turn insulation test
In system ", widely used ball-gap discharge and high-voltage thyristor conducting electric discharge.Gap of the ball-gap discharge by adjusting ball discharge, it
Firing potential is difficult to determine.High-voltage thyristor conducting electric discharge can be accomplished to be continuously adjusted from 0V to rated voltage.But high pressure
It is silicon-controlled it is single it is resistance to be pressed within 10000V, be difficult to solve more than 10000V.By test of many times, high-voltage thyristor concatenation makes
With DC disruptive voltage can be improved.But the smooth-shaped of high-voltage thyristor, multiple silicon-controlled superpositions are difficult to fix, and conventional consolidates
Fixing limit so that silicon-controlled discontinuity cannot meet performance requirement.
Utility model content
The technical problems to be solved in the utility model is overcome the deficiencies in the prior art, and the utility model provides a kind of convenience
And the silicon-controlled multi-layer high-voltage controllable silicon in serial connection structure being reliably fixed can be made.
In order to achieve the above objectives, the technical solution adopted in the utility model is：A kind of multi-layer high-voltage controllable silicon in serial connection structure,
Including fixed top plate and fixed bottom plate, it is equipped between the fixed top plate and fixed bottom plate multiple by several series connection stacked on top of one another
The high-voltage thyristor series mould set that constitutes of discharge switch component, it is stacked on top of one another after high-voltage thyristor series mould set series connection to set
It sets；The high-voltage thyristor series mould set is fixed by double-threaded screw between any two.
It is further improved as the utility model, the high-voltage thyristor series mould set include upper conductive aluminium sheet, under lead
Electrit plate, middle fixing plate, high-voltage thyristor, high-voltage diode and equalizing resistance；The middle fixing plate can equipped with high pressure
Control silicon location hole, high-voltage diode location hole, equalizing resistance location hole；The high-voltage thyristor, high-voltage diode, equalizing resistance
It is separately positioned on after parallel connection in the high-voltage thyristor location hole, high-voltage diode location hole, in the equalizing resistance location hole；
The wherein described high-voltage thyristor, high-voltage diode are oppositely arranged；The upper conductive aluminium sheet and lower conductive aluminium sheet block setting respectively
The high-voltage thyristor, the both ends of high-voltage diode and the upper conductive aluminium sheet and lower conductive aluminium sheet respectively with the high pressure
Silicon-controlled, high-voltage diode two electrodes contact.
Further improved as the utility model, the middle fixing plate is fixed on the upper conductive aluminium sheet and lower conduction
Between aluminium sheet；It is fixed by insulating support rod between the upper conductive aluminium sheet and lower conductive aluminium sheet.
Due to the application of the above technical scheme, the utility model has following advantages compared with prior art：
The multi-layer high-voltage controllable silicon in serial connection structure of the utility model sets several concatenated discharge switch component stackings
Set the high-voltage thyristor series mould set for being integrated into an Integral-structure type；It fixes, makes two-by-two again between high-voltage thyristor series mould set
Fixation that can be reliable while discharge switch component uniform force, can significantly extend silicon-controlled service life.
Description of the drawings
Technical solutions of the utility model are described further below in conjunction with the accompanying drawings：
Attached drawing 1 is the structural schematic diagram of the multi-layer high-voltage controllable silicon in serial connection structure of the utility model；
Attached drawing 2 is that the structure of the high-voltage thyristor series mould set of the multi-layer high-voltage controllable silicon in serial connection structure of the utility model is shown
It is intended to；
Attached drawing 3 is the structural schematic diagram of the middle fixing plate of the multi-layer high-voltage controllable silicon in serial connection structure of the utility model；
Wherein：1- fixes top plate；2- fixes bottom plate；3- high-voltage thyristor series mould sets；4- double-threaded screws；31- is upper conductive
Aluminium sheet；Conductive aluminium sheet under 32-；33- middle fixing plates；34- high-voltage thyristors；35- high-voltage diodes；36- equalizing resistances；331-
High-voltage thyristor location hole；332- high-voltage diode location holes；333 equalizing resistance location holes；334- driving power introduction holes.
Specific implementation mode
Below in conjunction with the accompanying drawings and specific embodiment the utility model is described in further detail.
A kind of multi-layer high-voltage controllable silicon in serial connection structure described in the utility model as shown in Fig. 1, including 1 He of fixed top plate
Fixed bottom plate 2 is equipped with multiple by several concatenated discharge switch components stacked on top of one another between fixed top plate 1 and fixed bottom plate 2
The high-voltage thyristor series mould set 3 of composition, setting stacked on top of one another after the high-voltage thyristor series mould set 3 is connected；High pressure is controllable
Silicon series mould set 3 is fixed by double-threaded screw 4 between any two.Several concatenated discharge switch components are stacked that be integrated into one whole
The high-voltage thyristor series mould set of body structural formula；It is fixed two-by-two again between high-voltage thyristor series mould set, makes discharge switch component
Fixation that can be reliable while uniform force, can significantly extend silicon-controlled service life.
As shown in Fig. 2, the high-voltage thyristor series mould set 3 of the utility model includes upper conductive aluminium sheet 31, lower conductive aluminum
Plate 32, middle fixing plate 33, high-voltage thyristor 34, high-voltage diode 35 and equalizing resistance 36, as shown in Fig. 3, centre are fixed
Plate 33 is equipped with high-voltage thyristor location hole 331, high-voltage diode location hole 332, equalizing resistance location hole 333；The high pressure
Silicon-controlled 34, high-voltage thyristor location hole 331, two pole of high pressure are separately positioned on after high-voltage diode 35,36 parallel connection of equalizing resistance
In pipe location hole 332, in equalizing resistance location hole 333；Wherein high-voltage thyristor 34, high-voltage diode 35 are oppositely arranged；On lead
Electrit plate 31 and lower conductive aluminium sheet 32 block be arranged in high-voltage thyristor 34, the both ends of high-voltage diode 35 and upper conduction respectively
Aluminium sheet 31 and lower conductive aluminium sheet 32 are contacted with two electrodes of high-voltage thyristor 34, high-voltage diode 35 respectively, at this time the aluminium of both sides
Plate is exactly upper and lower conductive plate；Middle fixing plate is fixed between the upper conductive aluminium sheet and lower conductive aluminium sheet；The upper conduction
It is fixed by insulating support rod between aluminium sheet and lower conductive aluminium sheet.The discharge switch group of respective numbers is superimposed according to test voltage
Part, at the same the driving power introduction hole 334 by being arranged on middle fixing plate 33 connect independent 5V, 18V power supply with by synchronous
The optical fiber of light source control, so that it may to form extra-high voltage discharge switch.
High-voltage thyristor and kenetron are provided in middle fixing plate 33, and side is enclosed by middle fixing plate
Around top is connected and fixed by upper lower conducting plate and the electrode of high-voltage thyristor and kenetron connects with upper lower conducting plate respectively
It is logical, make lower conducting plate as its conductive plate, fixation is laminated again later, fixed steady and uniform force can compare
It is reliable fixed, so as to significantly extend silicon-controlled service life.
The specific application example that the above is only the utility model does not constitute the scope of protection of the utility model any limit
System.Any technical scheme formed by adopting equivalent transformation or equivalent replacement, all fall within the utility model rights protection scope it
It is interior.
Claims (3)
1. a kind of multi-layer high-voltage controllable silicon in serial connection structure, it is characterised in that：Including fixed top plate and fixed bottom plate, in the fixation
It is equipped with multiple high-voltage thyristor strings being made of several concatenated discharge switch components stacked on top of one another between top plate and fixed bottom plate
Gang mould group, setting stacked on top of one another after the high-voltage thyristor series mould set series connection；The high-voltage thyristor series mould set two-by-two it
Between fixed by double-threaded screw.
2. multi-layer high-voltage controllable silicon in serial connection structure according to claim 1, it is characterised in that：The high-voltage thyristor series connection
Module includes upper conductive aluminium sheet, lower conductive aluminium sheet, middle fixing plate, high-voltage thyristor, high-voltage diode and equalizing resistance；It is described
Middle fixing plate is equipped with high-voltage thyristor location hole, high-voltage diode location hole, equalizing resistance location hole；The high pressure is controllable
The high-voltage thyristor location hole, high-voltage diode location hole are separately positioned on after silicon, high-voltage diode, equalizing resistance parallel connection
In interior, the described equalizing resistance location hole；The wherein described high-voltage thyristor, high-voltage diode are oppositely arranged；The upper conductive aluminium sheet
Is blocked respectively with lower conductive aluminium sheet be arranged in the high-voltage thyristor, the both ends of high-voltage diode and the upper conduction aluminium sheet and
Lower conduction aluminium sheet is contacted with two electrodes of the high-voltage thyristor, high-voltage diode respectively.
3. multi-layer high-voltage controllable silicon in serial connection structure according to claim 2, it is characterised in that：The middle fixing plate is fixed
Between the upper conductive aluminium sheet and lower conductive aluminium sheet；Pass through insulating support rod between the upper conductive aluminium sheet and lower conductive aluminium sheet
It is fixed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820133918.7U CN207967599U (en) | 2018-01-26 | 2018-01-26 | A kind of multi-layer high-voltage controllable silicon in serial connection structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820133918.7U CN207967599U (en) | 2018-01-26 | 2018-01-26 | A kind of multi-layer high-voltage controllable silicon in serial connection structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207967599U true CN207967599U (en) | 2018-10-12 |
Family
ID=63735212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820133918.7U Active CN207967599U (en) | 2018-01-26 | 2018-01-26 | A kind of multi-layer high-voltage controllable silicon in serial connection structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207967599U (en) |
-
2018
- 2018-01-26 CN CN201820133918.7U patent/CN207967599U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9966193B2 (en) | Electric circuit device | |
| CN203279343U (en) | Electric apparatus with heat dissipation function | |
| CN204982125U (en) | Cathode current segmentation adjusting mechanism for perpendicular continuous electroplating production line of PCB | |
| CN204068683U (en) | A kind of capacitance group of efficient low sense and install the power cell of this capacitance group | |
| WO2018192226A1 (en) | Laminated output structure of capacitive power source of welding apparatus | |
| CN207967599U (en) | A kind of multi-layer high-voltage controllable silicon in serial connection structure | |
| CN110365086A (en) | A kind of highly integrated charger power cell | |
| CN107743033B (en) | IGBT press-fitting structure | |
| CN203658494U (en) | Chip tantalum capacitor independent current limiting aging plate | |
| CN208128127U (en) | A kind of electronic type extra-high voltage direct-current discharge switch | |
| CN204145263U (en) | Based on the water-cooled power cell of IGBT | |
| CN208256664U (en) | A kind of IGBT control circuit board | |
| CN207819776U (en) | A kind of discrete IGBT three-phases array full-bridge modules | |
| CN110429828A (en) | A kind of system structure of novel high-pressure silicon stack | |
| CN105490558A (en) | Diode clamped three-level converter and power system thereof | |
| CN205901608U (en) | High -power high frequency and high voltage rectifier | |
| WO2024113479A1 (en) | Tube shell for fully-controlled power electronic device | |
| CN109638193A (en) | A kind of microsatellite accumulator structure | |
| CN107394997B (en) | Insulating device for frequency converter and IGBT tube wiring terminal | |
| CN115621233B (en) | A shell for full accuse formula power electronic device | |
| CN204068668U (en) | Based on the power cell of IGBT | |
| CN111211665A (en) | Composite busbar | |
| CN212967366U (en) | Transformer structure | |
| CN207425852U (en) | A kind of power module and its vehicle | |
| CN212060516U (en) | Testing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |