CN207965712U - The temperature self-adaptation control circuit of APD in quantum key dispatching system - Google Patents
The temperature self-adaptation control circuit of APD in quantum key dispatching system Download PDFInfo
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- CN207965712U CN207965712U CN201820467959.XU CN201820467959U CN207965712U CN 207965712 U CN207965712 U CN 207965712U CN 201820467959 U CN201820467959 U CN 201820467959U CN 207965712 U CN207965712 U CN 207965712U
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Abstract
The utility model discloses the temperature self-adaptation control circuits of APD in quantum key dispatching system a kind of, including temperature sampling circuit, high-voltage control circuit and power supply, the temperature sampling circuit and high-voltage control circuit are connect with power supply, the temperature sampling circuit is connected with high-voltage control circuit, the temperature sampling circuit is for sampling environment temperature and transmitting a signal to high-voltage control circuit, and the high-voltage control circuit is for generating APD biass；The utility model effectively realizes temperature self-adaptation control, can be when system context temperature changes, the bias V needed for adjust automatically avalanche photodide APDAPDSo that the sensitivity of avalanche photodide APD keeps stablizing, and is operated in rational operation interval.
Description
Technical field
The utility model is related to synchronizable optical detection technology fields in quantum key dispatching system, and in particular to a kind of quantum is close
The temperature self-adaptation control circuit of APD in key distribution system.
Background technology
Synchronous optical detector technology has had a wide range of applications in numerous areas.It is close in quantum information technology especially quantum
In key distribution system, synchronous optical detection also plays a crucial role.On the basis of synchronous optical detection is normal, it could carry out
Key generates and distribution.
Quantum key dispatching system needs to send out the synchronizable optical of fixed pulse number in transmitting terminal at work, receiving terminal into
The synchronous optical detection of row, the result of detection must be consistent with the umber of pulse sent out, could carry out subsequent putting base, error correction, secrecy
Greatly, key is generated.
It (referred to as " APD ") is realized together using the avalanche diode of built-in trans-impedance amplifier TIA in quantum key dispatching system
Walk optical detection.
The voltage that the both ends APD are added in when self-holding avalanche gain, the referred to as avalanche voltage of APD can just occur for APD.Avalanche voltage
Related with the operating temperature of APD, when the temperature decreases, avalanche voltage decreases.
In quantum key dispatching system, if using fixed APD biass, when the operation temperature decreases, the bias V of loadAPD
Higher, the sensitivity of APD can be higher, be easy to cause false triggering, and synchronizable optical is caused to count on the high side, system operation irregularity；Work as work
When temperature increases, the bias V of loadAPDRelatively low, the sensitivity of APD can reduce, and cause synchronizable optical to count on the low side, system work is different
Often.
Therefore it needs to provide the bias V varied with temperatureAPD, just can guarantee system worked well.Therefore it is badly in need of at present a kind of
Temperature self-adaptation bias control circuit, in temperature change, it is possible to provide suitable bias VAPD, ensure system worked well.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of quantum key in view of the above shortcomings of the prior art
The temperature self-adaptation control circuit of APD in distribution system, the temperature self-adaptation control circuit of APD in this quantum key dispatching system
It is effective to realize temperature self-adaptation control, can be when system context temperature change, two pole of adjust automatically avalanche optoelectronic
Bias V needed for pipe APDAPDSo that the sensitivity of avalanche photodide APD keeps stablizing, and is operated in rational operation interval
It is interior.
To realize the above-mentioned technical purpose, the technical solution that the utility model is taken is：
The temperature self-adaptation control circuit of APD in a kind of quantum key dispatching system, including it is temperature sampling circuit, high voltage-controlled
Circuit and power supply processed, the temperature sampling circuit and high-voltage control circuit are connect with power supply, the temperature sampling circuit and height
Control circuit connection is pressed, the high-voltage control circuit is for generating APD biass；
The temperature sampling circuit includes thermistor R1, resistance R2, resistance R3 and integrated operational amplifier U1, the heat
One end of quick resistance R1 connects power supply, the other end of the thermistor R1 respectively with one end of resistance R2 and integrated operation amplifier
The pin 3 of device U1 connects, and the other end of the resistance R2 connects ground wire, the pin 4 and resistance of the integrated operational amplifier U1
One end of R3 connects, and the pin 2 of the integrated operational amplifier U1 connects ground wire, the pin 5 of the integrated operational amplifier U1
Power supply is connected, the pin 1 of the integrated operational amplifier U1 is connected with the other end of resistance R3；
The high-voltage control circuit includes resistance R4, resistance R5, resistance R6, resistance R7, resistance R8, resistance R9, integrated fortune
It calculates amplifier U2 and triode Q1, one end of the resistance R8 is connect with the pin 4 of integrated operational amplifier U2, the integrated fortune
The pin 5 for calculating amplifier U2 connects power supply, and the pin 2 of the integrated operational amplifier U2 connects ground wire, and the integrated computation is put
The pin 3 of big device U2 is connect with one end of one end of resistance R5 and resistance R6 respectively, and the other end of the resistance R5 connects ground wire,
The other end of the resistance R6 is connect with the collector of one end of resistance R4, one end of resistance R7 and triode Q1 respectively, described
The other end of resistance R4 connects power supply, and the base stage of the triode Q1 is connect with the pin 1 of integrated operational amplifier U2, and described three
The emitter of pole pipe Q1 is connect with one end of resistance R9, and the other end of the resistance R9 connects ground wire, and the resistance R7's is another
End is for exporting APD biass.
Further include single chip machine controlling circuit, ADC analog-to-digital conversion electricity as the further improved technical solution of the utility model
Road and DAC D/A converting circuits, the temperature sampling circuit are connect with the ADC analog to digital conversion circuits, the ADC analog-to-digital conversions
Circuit is connect with single chip machine controlling circuit, and the single chip machine controlling circuit is connect with DAC D/A converting circuits, the DAC digital-to-analogues
Conversion circuit is connect with the high-voltage control circuit, and the single chip machine controlling circuit, ADC analog to digital conversion circuits and DAC digital-to-analogues turn
Circuit is changed to connect with power supply.
As the further improved technical solution of the utility model, the ADC analog to digital conversion circuits use ADC analog-to-digital conversions
Chip MAX1087, the DAC D/A converting circuits use DAC analog-digital chips AD5624.
The beneficial effects of the utility model are：
The utility model is adopted using the relationship of the avalanche voltage and operating ambient temperature of avalanche diode APD using temperature
Sample circuit samples operating ambient temperature, the bias V of avalanche diode APDAPDIt can be according to system context temperature
Variation, is adjusted to suitably be worth.The utility model can realize above-mentioned function by 2 kinds of circuits, and (1) passes through temperature sampling circuit
With the bias V needed for high-voltage control circuit output avalanche diode APDAPD, circuit design simplify, miniaturization, it is at low cost.(2)
The bias V needed for avalanche diode APD is exported by temperature sampling circuit, high-voltage control circuit and single chip machine controlling circuitAPD,
Circuit design is simple, and control is flexible.
Description of the drawings
Fig. 1 is the structural schematic diagram of the utility model embodiment 1.
Fig. 2 is the circuit theory schematic diagram of the utility model embodiment 1.
Fig. 3 is the structural schematic diagram of the utility model embodiment 2.
Fig. 4 is that the circuit theory that the temperature sampling circuit of the utility model embodiment 2 is connect with ADC analog to digital conversion circuits is shown
It is intended to.
Fig. 5 is that the circuit theory that the DAC D/A converting circuits of the utility model embodiment 2 are connected with high-voltage control circuit is shown
It is intended to.
Specific implementation mode
Specific embodiment of the present utility model is further illustrated below according to Fig. 1 to Fig. 5：
Embodiment 1：
Referring to Fig. 1, the temperature self-adaptation control circuit of APD in a kind of quantum key dispatching system, including temperature sampling electricity
Road, high-voltage control circuit and power supply, the temperature sampling circuit and high-voltage control circuit are connect with power supply, the temperature sampling
Circuit is connected with high-voltage control circuit, and the temperature sampling circuit is for sampling environment temperature and transmitting a signal to high voltage control electricity
Road, the high-voltage control circuit is for generating APD biass.
Referring to Fig. 2, the temperature sampling circuit includes thermistor R1, resistance R2, resistance R3 and integrated operational amplifier
One end of U1, the thermistor R1 connects power supply, the other end of the thermistor R1 respectively with one end sum aggregate of resistance R2
It is connected at the pin 3 of operational amplifier U1, the other end of the resistance R2 connects ground wire, and the integrated operational amplifier U1's draws
Foot 4 is connect with one end of resistance R3, and the pin 2 of the integrated operational amplifier U1 connects ground wire, the integrated operational amplifier
The pin 5 of U1 connects power supply, and the pin 1 of the integrated operational amplifier U1 and the other end of resistance R3 are and high-voltage control circuit
Connection.
Referring to Fig. 2, the high-voltage control circuit includes resistance R4, resistance R5, resistance R6, resistance R7, resistance R8, resistance
R9, integrated operational amplifier U2 and triode Q1, the pin 1 of the integrated operational amplifier U1 and the other end of resistance R3 with
One end of resistance R8 connects, and the other end of the resistance R8 is connect with the pin 4 of integrated operational amplifier U2, the integrated computation
The pin 5 of amplifier U2 connects power supply, and the pin 2 of the integrated operational amplifier U2 connects ground wire, the integrated computation amplification
The pin 3 of device U2 is connect with one end of one end of resistance R5 and resistance R6 respectively, and the other end of the resistance R5 connects ground wire, institute
The other end for stating resistance R6 is connect with the collector of one end of resistance R4, one end of resistance R7 and triode Q1 respectively, the electricity
The other end for hindering R4 connects power supply, and the base stage of the triode Q1 is connect with the pin 1 of integrated operational amplifier U2, three pole
The emitter of pipe Q1 is connect with one end of resistance R9, and the other end of the resistance R9 connects ground wire, the other end of the resistance R7
For exporting APD biass.
Temperature sampling circuit samples temperature using thermistor R1.Work as temperature change, temperature sampling circuit generates
Corresponding control voltage signal Vctrl.Voltage signal VctrlAfter high-voltage control circuit amplifies, required APD biass are generated
VAPD。
According to the handbook of APD devices it is found that APD biass VAPDIt is as follows with the relational expression of environment temperature T：
VAPD=k1×T+λVBR(formula 1.1)
Wherein k1For the temperature coefficient of avalanche photodide APD, T is the environment temperature of avalanche photodide APD work
Degree, λ are the bias coefficient of avalanche photodide APD, VBRFor snowslides of the avalanche photodide APD under 25 DEG C of operating temperatures
Voltage；
As shown in Fig. 2, R1 is thermistor in circuit, chip U1 is integrated transporting discharging, when environment temperature T changes, temperature-sensitive
Resistance R1 resistance values change, and integrated operational amplifier U1 generates corresponding voltage signal Vctrl, output voltage VctrlWith environment temperature
The relationship for spending T meets：
Vctrl=k12×T+b11(formula 1.2)
Due to the increase with environment temperature, the resistance value of thermistor R1 linearly increases, thermistor R1 and environment temperature T
With certain relationship, and integrated operational amplifier U1 generates corresponding voltage signal VctrlWith thermistor R1, resistance R2 and
Resistance R3 is related, therefore voltage signal VctrlIt can be calculated with the relational expression of environment temperature T, k12And b11For that can calculate
Parameter.
Chip U2 is the integrated transporting discharging of a low pressure precision.Q1 is a high voltage bearing triode, defeated to integrated transporting discharging U2
Go out electric current to be adjusted to realize the negative-feedback of integrated transporting discharging U2.Integrated transporting discharging U2 is by negative-feedback by the same phase of integrated transporting discharging U2
The voltage for the inverting input that the voltage of input terminal is adjusted to temperature sampling circuit is input to integrated transporting discharging U2 is identical.Then export
Variable bias VAPDWith the voltage V of temperature sampling circuit inputctrlRelational expression meet：
Wherein R5 is the resistance value of resistance R5, and R6 is the resistance value of resistance R6, can be extrapolated according to formula 1.2 and 1.3, can
Tuningout presses VAPDIt is as follows with the relational expression of environment temperature T：
Contrast equation 1.1 and 1.4 can obtain：
Wherein k1、λVBRIt is worth to determine, in order to obtain k1With λ VBR, suitable k can be chosen12、b11、R5And R6, you can it realizes
Relational expression needed for formula 1.1.Wherein k12And b11Value it is related with thermistor R1, resistance R2 and resistance R3, pass through choose close
Thermistor R1, resistance R2 and the resistance R3 of suitable resistance value obtain suitable k12、b11.It realizes when variation of ambient temperature,
Variable bias VAPDIt is adjusted correspondingly in real time, to ensure that APD is operated in rational section.
Temperature self-adaptation control circuit provided in this embodiment utilizes the avalanche voltage and building ring of avalanche diode APD
The relationship of border temperature samples operating ambient temperature using thermistor.Pass through temperature self-adaptation circuit output snowslide two
Bias V needed for pole pipe APDAPD.That is bias VAPDIt can be adjusted according to the variation of the operating ambient temperature of quantum key dispatching system
It is whole to be worth to suitable, ensure quantum key dispatching system normal work.The present embodiment need to only build hardware circuit, can be achieved with temperature
The real-time sampling of degree and the real-time adjusting for exporting bias, circuit design miniaturization, cost are relatively low.
Embodiment 2：
Referring to Fig. 3, the temperature self-adaptation control circuit of APD in a kind of quantum key dispatching system, including temperature sampling electricity
Road, high-voltage control circuit, power supply, single chip machine controlling circuit, ADC analog to digital conversion circuits and DAC D/A converting circuits, the temperature
Sample circuit is connect with the ADC analog to digital conversion circuits, and the ADC analog to digital conversion circuits are connect with single chip machine controlling circuit, institute
It states single chip machine controlling circuit to connect with DAC D/A converting circuits, the DAC D/A converting circuits connect with the high-voltage control circuit
It connects, the temperature sampling circuit, high-voltage control circuit, single chip machine controlling circuit, ADC analog to digital conversion circuits and DAC digital-to-analogue conversions
Circuit is connect with power supply.The temperature sampling circuit is used to sample environment temperature and transmits a signal to ADC analog to digital conversion circuits,
The ADC analog to digital conversion circuits are believed for transmitting a signal to single chip machine controlling circuit, the single chip machine controlling circuit for sending
Number DAC D/A converting circuits are arrived, DAC D/A converting circuits are for transmitting a signal to high-voltage control circuit, the high voltage control electricity
Road is for generating APD biass.
Referring to Fig. 4, the temperature sampling circuit includes thermistor R1, resistance R2, resistance R3 and integrated operational amplifier
One end of U1, the thermistor R1 connects power supply, the other end of the thermistor R1 respectively with one end sum aggregate of resistance R2
It is connected at the pin 3 of operational amplifier U1, the other end of the resistance R2 connects ground wire, and the integrated operational amplifier U1's draws
Foot 4 is connect with one end of resistance R3, and the pin 2 of the integrated operational amplifier U1 connects ground wire, the integrated operational amplifier
The pin 5 of U1 connects power supply, and the pin 1 of the integrated operational amplifier U1 is connected with the other end of resistance R3, turns to ADC moduluses
Change circuit output voltage signal Vtemp.The resolution of ADC modulus conversion chips in the ADC analog to digital conversion circuits that the present embodiment uses
Rate is 10bit.The design schematic diagram of temperature sampling circuit is as shown in figure 4, wherein：R1 is thermistor.Chip U1 is integrated fortune
It puts.When temperature T changes, R1 resistance values change, and U1 generates corresponding voltage signal Vtemp, by ADC analog to digital conversion circuits
ADC chips are sampled.
Referring to Fig. 5, the high-voltage control circuit includes resistance R4, resistance R5, resistance R6, resistance R7, resistance R8, resistance
R9, integrated operational amplifier U2 and triode Q1, one end of the resistance R8 are connect with the pin 4 of integrated operational amplifier U2,
The pin 5 of the integrated operational amplifier U2 connects power supply, and the pin 2 of the integrated operational amplifier U2 connects ground wire, described
The pin 3 of integrated operational amplifier U2 is connect with one end of one end of resistance R5 and resistance R6 respectively, and the resistance R5's is another
End connection ground wire, the other end of the resistance R6 current collection with one end of resistance R4, one end of resistance R7 and triode Q1 respectively
Pole connects, and the other end of the resistance R4 connects power supply, the base stage of the triode Q1 and the pin 1 of integrated operational amplifier U2
Connection, the emitter of the triode Q1 are connect with one end of resistance R9, and the other end of the resistance R9 connects ground wire, the electricity
The other end for hindering R7 is used to export APD biass to APD.DAC digital-to-analogue conversions in the DAC D/A converting circuits that the present embodiment uses
The resolution ratio of chip can be 12bit, and the digital quantity D that single chip machine controlling circuit inputs is converted to voltage by DAC D/A converting circuits
Vb, and the one end for the resistance R8 being sent in high-voltage control circuit, Q1 is a high voltage bearing triode, defeated to integrated transporting discharging U2
Go out electric current to be adjusted to realize the negative-feedback of integrated transporting discharging.Integrated transporting discharging U2 is by negative-feedback by the same mutually defeated of integrated transporting discharging U2
The voltage for entering end is adjusted to identical as the voltage for the inverting input for being input to integrated transporting discharging U2, finally by the another of resistance R7
It holds to APD and exports APD biass.
Wherein ADC analog to digital conversion circuits use DAC using ADC modulus conversion chips MAX1087, DAC D/A converting circuit
Analog-digital chip AD5624, single chip machine controlling circuit use STM32103 series monolithics, such as microcontroller STM32103T4.
The present embodiment also provides a kind of controlling party of the temperature self-adaptation control circuit of APD in quantum key dispatching system
Method, referring to Fig. 3, temperature sampling circuit samples the temperature T of APD devices using thermistor R1, and temperature T is converted into electricity
Press Vtemp.Single chip machine controlling circuit controls the modulus conversion chip ADC in ADC analog to digital conversion circuits by voltage signal VtempTurn
Change digital quantity A into.Single chip machine controlling circuit is according to preset relational expression：D=k2×A+b1(by the relational expression, it can be achieved that DAC
The voltage V of D/A converting circuit outputbWith VtempCorrespondence), converse required digital quantity D.Single chip machine controlling circuit will
Digital quantity D exports corresponding voltage V by DAC D/A converting circuitsb。VbAPD institutes are generated after high-voltage control circuit is amplified
The bias V neededAPD。
Specific steps include：
Step 1：Temperature sampling circuit samples the environment temperature T of APD devices using thermistor R1, and by environment
Temperature T exports the voltage value V closed with environment temperature T-phase into voltage is converted totemp, single chip machine controlling circuit control ADC moduluses turn
Circuit is changed to voltage value VtempIt is sampled, ADC analog to digital conversion circuits generate and voltage value VtempCorresponding digital quantity A；
Step 2：The digital quantity A that ADC analog to digital conversion circuits generate is obtained to need to turn to DAC digital-to-analogues with single chip machine controlling circuit
Change the relational expression of the digital quantity D of circuit input；
Step 3：Single chip machine controlling circuit receives the digital quantity A that ADC analog to digital conversion circuits generate and the relationship according to step 2
Formula calculates the value of digital quantity D；
Step 4：Single chip machine controlling circuit is generated to DAC D/A converting circuits input digital quantity D, DAC D/A converting circuit
Voltage V corresponding with digital quantity Db；
Step 5：High-voltage control circuit receives the voltage V that DAC D/A converting circuits generateb, and generate APD biass VAPDFrom
And the bias V of temperature self-adaptation is provided for APDAPD。
The step 2 includes the following steps:
(1) the bias V of avalanche photodide APD is obtainedAPDWith the relational expression of environment temperature T：
VAPD=k1×T+λVBR(formula 1)；
Wherein k1For the temperature coefficient of avalanche photodide APD, T is the environment temperature of avalanche photodide APD work
Degree, λ are the bias coefficient of avalanche photodide APD, VBRFor snowslides of the avalanche photodide APD under 25 DEG C of operating temperatures
Voltage；
(2) the voltage value V that temperature sampling circuit generates is obtainedtempWith the relational expression of environment temperature T：
Vtemp=k3×T+b2(formula 2)；
The electricity of thermistor R1 is obtained by the resistance value of thermistor R1 and the relational expression of environment temperature T and formula (2)
Resistance value and voltage value VtempRelational expression, measure varying environment at a temperature of multigroup thermistor R1 resistance value it is corresponding
Voltage value Vtemp, by the corresponding voltage value V of the resistance value of multigroup thermistor R1tempSubstitute into the resistance value of thermistor R1
With voltage value VtempRelational expression, k is obtained by curve matching3And b2Value；
(3) the digital quantity A that ADC analog to digital conversion circuits generate is calculated：
Wherein VREF1Reference voltage for the ADC modulus conversion chips used in ADC analog to digital conversion circuits, X are ADC moduluses
The sampling precision (digit) of the ADC modulus conversion chips used in conversion circuit；
(4) relationship of the digital quantity A and environment temperature T of the generation of ADC analog to digital conversion circuits are obtained according to formula 2 and formula 3
Formula；
(5) as shown in figure 5, chip U2 is integrated transporting discharging.Q1 is a high voltage bearing triode, is exported to integrated transporting discharging U2
Electric current is adjusted to realize the negative-feedback of integrated transporting discharging U2.Integrated transporting discharging U2 is by negative-feedback by the same mutually defeated of integrated transporting discharging U2
The voltage for entering end is adjusted to identical as the voltage of the inverting input of integrated transporting discharging U2；The voltage that DAC D/A converting circuits generate
Value VbThe APD biass V generated with high-voltage control circuitAPDRelational expression it is as follows：
VAPD=k4×Vb(formula 4)；
Wherein VbFor DAC D/A converting circuits generate voltage value,D is single chip machine controlling circuit to DAC
D/A converting circuit inputs digital quantity, VREF2For the benchmark electricity of the DAC analog-digital chips used in DAC D/A converting circuits
Pressure, Y are the sampling precision of the DAC analog-digital chips used in DAC D/A converting circuits；R6For high voltage control
The resistance value of resistance R6 in circuit, R5For the resistance value of the resistance R5 in high-voltage control circuit；
(6) relational expression obtained according to formula 1, formula 4 and step (4), obtains the pass between digital quantity D and digital quantity A
It is formula：
Wherein k1、k3、k4、b2、b3、VREF1、VREF2、λVBR, X, Y determine in above process.
Formula 5 is the preset relation formula needed for single chip machine controlling circuit.As a result, in system operation, only it need to pass through list
Piece machine control circuit obtains the relevant sampled value A of temperature, substitutes into formula 5 and calculates and export required digital quantity D, you can realizes temperature
Degree is adaptive.I.e. when the temperature change of working environment, bias also generates respective change therewith, realizes temperature self-adaptation.
The utility model is adopted using the relationship of the avalanche voltage and operating ambient temperature of avalanche diode APD using temperature
Sample circuit samples operating ambient temperature, the bias V of avalanche diode APDAPDIt can be according to system context temperature
Variation, is adjusted to suitably be worth.Above-mentioned function can be achieved in above-mentioned 2 kinds of embodiments of the utility model description, and (1) passes through temperature
Sample circuit and high-voltage control circuit export the bias V needed for avalanche diode APDAPD, circuit design simplify, miniaturization, at
This is low.(2) it is exported needed for avalanche diode APD by temperature sampling circuit, high-voltage control circuit and single chip machine controlling circuit
Bias VAPD, circuit design is simple, and control is flexible.
The scope of protection of the utility model includes but not limited to embodiment of above, and the scope of protection of the utility model is to weigh
Subject to sharp claim, any replacement being readily apparent that those skilled in the art that this technology is made, deformation, improvement are each fallen within
The scope of protection of the utility model.
Claims (3)
1. the temperature self-adaptation control circuit of APD in a kind of quantum key dispatching system, it is characterised in that：Including temperature sampling electricity
Road, high-voltage control circuit and power supply, the temperature sampling circuit and high-voltage control circuit are connect with power supply, the temperature sampling
Circuit is connected with high-voltage control circuit, and the high-voltage control circuit is for generating APD biass；
The temperature sampling circuit includes thermistor R1, resistance R2, resistance R3 and integrated operational amplifier U1, the temperature-sensitive electricity
The one end for hindering R1 connects power supply, the other end of the thermistor R1 respectively with one end of resistance R2 and integrated operational amplifier U1
Pin 3 connect, the other end of the resistance R2 connects ground wire, the pin 4 and resistance R3's of the integrated operational amplifier U1
One end connects, and the pin 2 of the integrated operational amplifier U1 connects ground wire, and the pin 5 of the integrated operational amplifier U1 connects
The pin 1 of power supply, the integrated operational amplifier U1 is connected with the other end of resistance R3；
The high-voltage control circuit includes that resistance R4, resistance R5, resistance R6, resistance R7, resistance R8, resistance R9, integrated computation are put
Big device U2 and triode Q1, one end of the resistance R8 are connect with the pin 4 of integrated operational amplifier U2, and the integrated computation is put
The pin 5 of big device U2 connects power supply, and the pin 2 of the integrated operational amplifier U2 connects ground wire, the integrated operational amplifier
The pin 3 of U2 is connect with one end of one end of resistance R5 and resistance R6 respectively, and the other end of the resistance R5 connects ground wire, described
The other end of resistance R6 is connect with the collector of one end of resistance R4, one end of resistance R7 and triode Q1 respectively, the resistance
The other end of R4 connects power supply, and the base stage of the triode Q1 is connect with the pin 1 of integrated operational amplifier U2, the triode
The emitter of Q1 is connect with one end of resistance R9, and the other end of the resistance R9 connects ground wire, and the other end of the resistance R7 is used
In output APD biass.
2. the temperature self-adaptation control circuit of APD, feature exist in quantum key dispatching system according to claim 1
In：Further include single chip machine controlling circuit, ADC analog to digital conversion circuits and DAC D/A converting circuits, the temperature sampling circuit and institute
The connection of ADC analog to digital conversion circuits is stated, the ADC analog to digital conversion circuits are connect with single chip machine controlling circuit, the microcontroller control
Circuit is connect with DAC D/A converting circuits, and the DAC D/A converting circuits are connect with the high-voltage control circuit, the monolithic
Machine control circuit, ADC analog to digital conversion circuits and DAC D/A converting circuits are connect with power supply.
3. the temperature self-adaptation control circuit of APD, feature exist in quantum key dispatching system according to claim 2
In：The ADC analog to digital conversion circuits use ADC modulus conversion chips MAX1087, the DAC D/A converting circuits to use DAC numbers
Mould conversion chip AD5624.
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| CN201820467959.XU CN207965712U (en) | 2018-04-04 | 2018-04-04 | The temperature self-adaptation control circuit of APD in quantum key dispatching system |
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| CN201820467959.XU CN207965712U (en) | 2018-04-04 | 2018-04-04 | The temperature self-adaptation control circuit of APD in quantum key dispatching system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108445946A (en) * | 2018-04-04 | 2018-08-24 | 安徽问天量子科技股份有限公司 | The temperature self-adaptation control circuit and method of APD in quantum key dispatching system |
| CN110865674A (en) * | 2019-11-21 | 2020-03-06 | 北京轩宇空间科技有限公司 | Method and device for adjusting bias voltage of photoelectric detector and photoelectric detection system |
-
2018
- 2018-04-04 CN CN201820467959.XU patent/CN207965712U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108445946A (en) * | 2018-04-04 | 2018-08-24 | 安徽问天量子科技股份有限公司 | The temperature self-adaptation control circuit and method of APD in quantum key dispatching system |
| CN110865674A (en) * | 2019-11-21 | 2020-03-06 | 北京轩宇空间科技有限公司 | Method and device for adjusting bias voltage of photoelectric detector and photoelectric detection system |
| CN110865674B (en) * | 2019-11-21 | 2022-04-22 | 北京轩宇空间科技有限公司 | Method and device for adjusting bias voltage of photoelectric detector and photoelectric detection system |
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