CN207938618U - A kind of laser slotting structure of passivating back solar cell - Google Patents
A kind of laser slotting structure of passivating back solar cell Download PDFInfo
- Publication number
- CN207938618U CN207938618U CN201820435625.4U CN201820435625U CN207938618U CN 207938618 U CN207938618 U CN 207938618U CN 201820435625 U CN201820435625 U CN 201820435625U CN 207938618 U CN207938618 U CN 207938618U
- Authority
- CN
- China
- Prior art keywords
- line
- vertical
- parallel
- septal
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of laser slotting structures of passivating back solar cell,It is related to technical field of solar cell manufacturing,The utility model includes several parallel arrangement septal lines being uniformly arranged in backside passivation film and several vertical arrangement septal lines for intersecting vertically with several parallel arrangement septal lines,Parallel arrangement septal line includes the parallel dotted lines section of the solid parallel lines section and unslotted slotted by laser,Vertical arrangement septal line includes the vertical dotted line section of the solid vertical line section and unslotted slotted by laser,The combination of the parallel arrangement septal line and vertical arrangement septal line of the utility model can reduce active area of the laser on silicon chip matrix,Reduce the loss of surface layer backside passivation film,Realize that parallel and vertical direction photo-generated carrier is collected to promote battery efficiency,And slotting no longer has uniform directionalities,Stress caused by helping to disperse the laser that silicon chip matrix is born,Ensure the mechanical load performance of later stage component package.
Description
Technical field
The utility model is related to technical field of solar cell manufacturing, more particularly to a kind of passivating back sun electricity
The laser slotting structure in pond.
Background technology
Passivating back solar cell is the solar cell of new high-efficiency structure of new generation, compatible conventional Al-BSF battery productions
Technique can significantly improve the photoelectric conversion efficiency of battery by introducing backside passivation film and laser slotting technique, however the back side
Although the passivating film of deposition shows excellent surface passivation and body passivation characteristics, but the passivation layer has higher dielectric constant
With stable chemical characteristic and corrosion resistance, laser slotting is generally required by the passivation film stripping, leaks out silicon substrate, then pass through print
Brush conducting aluminum paste, conducting aluminum paste forms good Ohmic contact leadout electrode with silicon substrate after high temperature sintering, just can be successfully by light
Raw carrier export.
But laser fluting can also destroy the passivation film in differential trench open region simultaneously, to reduce cell backside
It is passivated overall effect；And differential trench open region it is too small be unfavorable for silicon substrate and export metal electrode between form enough Jin Banjie
Area is touched, causes photo-generated carrier export resistance excessive, therefore need to consider passive behavior when designing laser slotting region
It is balanced with derived from photo-generated carrier, to reach best photoelectric conversion efficiency.In addition, laser instantaneously acts on silicon chip base
Kinetic energy on bottom and thermal energy buildup, it is possible to create silicon base internal stress, in subsequent technique, as silicon chip substrate passes through in components welding
Exertin and heat effect again easily generate it is hidden split, fragment.
The conventional backplate laser slotting structure of industry has at present：Linear type (Line), dotted line type (Dash), dot
(Dot) and square (Square) notching construction；
Linear type electrode design：Technology controlling and process is simple, only needs to consider line spacing after selected laser, ensures line both sides
Photo-generated carrier collection in the line distance of half is transferred on same laser slotting line, but tight to passivation damage layer
Weight, silicon chip matrix meets with stresses and relatively concentrates, while photo-generated carrier can only flow between the both threads in direction parallel to each other.
Dotted line type electrode design：The destruction in passivating back region is subtracted compared to linear type on the basis of identical line spacing
Lack at least 50%, the damage area of silicon chip matrix has also accordingly been reduced, but photo-generated carrier export characteristic has certain loss, no
It only conducts groove area integrally to reduce, and photo-generated carrier can only be between the both threads in direction parallel to each other along longer than two points
One of line spacing flowing.
Dot and square electrode design：Both are all matrix form mode of grooving, can be on the basis for reducing passivation loss
The upper light induced electron for effectively collecting three dimension scale, but fluting size of the laser of industrialization at present on back of the body passivation film,
Power, time and back of the body passivating film burn slurry in aspect of performance there is also unmatched problem, both mode of grooving are more
It is applied in high cost and the big metallic back plate evaporation coating technique of technical difficulty and experimental study exploitation high efficiency back side is blunt
Change on solar cell etc..
The linear type notching construction that passivating back solar cell common at present mostly uses greatly, due to the structure laser slotting
Directly run through entire silicon chip back side, therefore, there is also laser wire casings below the back electrode of cell piece, lead to the passivating back sun
Can battery fragment is easy to when components welding produces, mass production statistics indicate that, using the back of the body of linear type laser slotting structure
Face is passivated solar battery sheet, and components welding fragment rate improves 2-3 times than conventional batteries piece.
Regardless of linear type or dotted line type notching construction, photo-generated carrier all can only be in the both threads in direction parallel to each other
Between (single parallel arrangement septal line or vertical arrangement septal line) with the line spacing of half be basic flow collection, it is this to set
Meter limits the collection dimension of photo-generated carrier to a certain extent, extends conduction distance, is unfavorable for passivating back sun electricity
The conduction resistance in pond reduces, to which cell photoelectric transfer efficiency is impaired.
Utility model content
The purpose of this utility model is that：Linear type or dotted line type are used in order to solve existing passivating back solar cell
Notching construction, photo-generated carrier can only between the both threads in the direction that is mutually parallel flow collection, it is limited and single to collect dimension
It is larger through active area of the linear laser notching construction on silicon chip matrix, cause silicon chip matrix to meet with stresses larger, battery
Piece in components welding, easily fragment the problem of, the utility model provides a kind of laser slotting knot of passivating back solar cell
Structure.
The utility model specifically uses following technical scheme to achieve the goals above：
A kind of laser slotting structure of passivating back solar cell, including be uniformly arranged in several flat in backside passivation film
Several vertical arrangement septal lines row arrangement septal line and intersected vertically with several parallel arrangement septal lines, parallel arrangement septal line
Include the parallel dotted lines section of the solid parallel lines section and unslotted slotted by laser, solid parallel lines section and parallel dotted lines it is intersegmental every
Arrangement, vertical arrangement septal line includes the vertical dotted line section of the solid vertical line section and unslotted slotted by laser, vertical real
Line segment is intervally arranged with vertical dotted line section.
Since silicon chip back side passivating film laser slotting structure takes orthogonal parallel arrangement septal line and vertical row
Cloth septal line, and parallel arrangement septal line includes the solid parallel lines section by laser slotting being intervally arranged and parallel phantom line segments,
Vertical arrangement septal line includes the solid vertical line section and vertical dotted line section by laser slotting being equally intervally arranged, by adjusting suitable
Line spacing, real segment and the dotted line segment length of the parallel arrangement septal line and vertical arrangement septal line matched, real segment total length account for
(the above-mentioned value of parallel arrangement septal line and vertical arrangement septal line can not on same silicon chip matrix for the ratio of septal line total length
Together), the laser slotting structure obtained in this way can be in the respective side of being mutually parallel of parallel arrangement septal line and vertical arrangement septal line
To 4 lines between collect the photo-generated carrier of flowing, export dimension and direction widened, photo-generated carrier realizes parallel and Vertical Square
To various dimensions collect combination, shorten carrier from the internal transmission path for reaching back side conductive electrode, enhance photo-generated carrier
Capacity gauge, to reduce conduction resistance, promoted battery output photoelectric efficiency；It can be dropped by the above parameter adjustment simultaneously
Low surface layer backside passivation film loss, reduces active area of the laser on silicon chip matrix, and slots no longer with unified
Directionality helps to disperse the stress that silicon chip matrix is born, and ensures the mechanical load of later stage package assembling, reduces cell piece
The fragment that occurs during components welding, hidden phenomena such as splitting.
Further, the total length of the parallel arrangement septal line and vertical arrangement septal line is equal, be 154.5~
159.5mm, and both ends and the distance range of silicon chip matrix border are 0.5~1.5mm.
Further, the line spacing range of the parallel arrangement septal line is 0.1~2.5mm, solid parallel lines segment length model
It encloses for 0.2~2.5mm, parallel dotted lines segment length ranging from 0.1~2.5mm, the total length of solid parallel lines section accounts between parallel arrangement
Every line total length proportional region be 50%~100%.
Further, the line spacing range of the vertical arrangement septal line is 0.1~2.5mm, solid vertical line segment length model
It encloses for 0.2~2.5mm, vertical dotted line segment length ranging from 0.1~2.5mm, the total length of solid vertical line section accounts between vertical arrangement
Every line total length proportional region be 50%~100%.
Further, the solid parallel lines section and solid vertical line are intersegmental every staggered.
Further, it is in cross that the solid parallel lines section, which intersects arrangement with solid vertical line section center,.
Further, the both ends of the solid parallel lines section are connected separately with solid vertical line section, and two solid vertical line sections are distributed
In the both sides of solid parallel lines section.
Further, the export Ag/Ag-Al electrodes in the backside passivation film, Ag/Ag-Al electrodes and its extension 0~
0.8mm is not arranged solid parallel lines section and solid vertical line section with inner region, helps to reduce surface passivation area loss and silicon chip base
Body stress.
The beneficial effects of the utility model are as follows：
1, the combination of the parallel arrangement septal line of the utility model and vertical arrangement septal line increases leading for light induced electron
Go out dimension and direction, shortens carrier from the internal transmission path for reaching back side conductive electrode, can effectively reduce battery
Series resistance, on the basis of keeping and further decreasing passivating back region fluting area, it is possible to reduce to passivating back area
The destruction in domain, to promote the open-circuit voltage of battery.
2, the laser slotting structure of the utility model can reduce the active area on silicon chip matrix, and slot no longer
With uniform directionalities, stress caused by the laser that silicon chip matrix is born is helped to disperse, it is ensured that the machinery of later stage component package
Load performance, and the laser slotting structure of the utility model can large-scale production, compatible existing laser on the market opens
Slot class device element and Screen-printed conductive slurry technique.
3, the parallel arrangement septal line of the utility model and vertical arrangement septal line both ends are at a distance from silicon chip matrix border
Range is 0.5~1.5mm, avoid it is excessively close away from side, get to silicon chip matrix boundary be easy chipping fragment and electric leakage the problem of,
It also avoids away from side too far, photo-generated carrier the problem of can not collecting that marginal portion one is enclosed.
Description of the drawings
Fig. 1 is the overall structure diagram of the utility model embodiment 1.
Fig. 2 is the overall structure diagram of the utility model embodiment 2.
Fig. 3 is the overall structure diagram of the utility model embodiment 3.
Reference numeral：1, parallel arrangement septal line；1-1, solid parallel lines section；1-2, parallel dotted lines section；2, between vertical arrangement
Every line；2-1, solid vertical line section；2-2, vertical dotted line section；3, backside passivation film；4, Ag/Ag-Al electrodes.
Specific implementation mode
In order to which those skilled in the art are better understood from the utility model, below in conjunction with the accompanying drawings with following embodiment to this
Utility model is described in further detail.
Embodiment 1
As shown in Figure 1, the present embodiment provides a kind of laser slotting structures of passivating back solar cell, including uniformly arrange
In in backside passivation film 3 several parallel arrangement septal lines 1 and intersect vertically with several parallel arrangement septal lines 1 several vertical
Arrange septal line 2, the present embodiment in silicon chip matrix backside passivation film using wavelength is certain and sizeable laser facula into
Row fluting, the backside passivation film includes but not limited to aluminium oxide, silica, silica, nitrogen-oxygen-silicon, silicon carbide and its difference
The lamination of combination, lamination film thickness are 110nm, and the laser facula uses wavelength for the square hot spot of 532nm, on stack membrane
Laser facula scale be 35um, opened without laser in the region of cell backside export Ag/Ag-Al electrodes 4 and extension 0.8mm
Slot contributes to the stress for reducing surface passivation area loss and silicon chip matrix.
The arrangement parallel arrangement septal line 1 successively from top to bottom in silicon chip matrix backside passivation film 3, every two parallel arrangements
Line spacing between septal line 1 is 1.2mm, and the parallel arrangement septal line 1 includes the parallel reality slotted by above-mentioned laser facula
Parallel dotted lines the section 1-2, solid parallel lines section 1-1 of line segment 1-1 and unslotted are intervally arranged with parallel dotted lines section 1-2, parallel arrangement
Septal line 1 is matched with silicon chip matrix border, total length 156mm, and both ends and the distance range of silicon chip matrix border are
0.75mm, and the length of wherein solid parallel lines section 1-1 is 0.8mm, and the length of parallel dotted lines section 1-2 is 0.7mm；
The arrangement vertical arrangement septal line 2 successively from left to right in silicon chip matrix backside passivation film 3, every two vertical arrangements
Line spacing between septal line 2 is 0.75mm, and the vertical arrangement septal line 2 includes the vertical reality slotted by above-mentioned laser facula
Vertical dotted line the section 2-2, solid vertical line section 2-1 of line segment 2-1 and unslotted are intervally arranged with vertical dotted line section 2-2, vertical arrangement
Septal line 2 is matched with silicon chip matrix border, total length 156mm, and both ends and the distance range of silicon chip matrix border are
0.75mm, and the length of wherein solid vertical line section 2-1 is 1.3mm, and the length of vertical dotted line section 2-2 is 1.1mm；And parallel reality
Line segment 1-1 arranges with solid vertical line section 2-1 interleaveds.
The combination of the parallel arrangement septal line 1 and vertical arrangement septal line 2 of the present embodiment can be in parallel arrangement septal line
And vertical arrangement septal line is respectively mutually parallel and collects the photo-generated carrier of flowing between 4 lines in direction, exports dimension and direction
It widens, photo-generated carrier realizes that parallel and vertical direction various dimensions collect combination, enhances the capacity gauge of photo-generated carrier, from
And it reduces conduction resistance, promote large-scale production battery output photoelectric efficiency；And laser is reduced on silicon chip matrix
Active area, fluting no longer have uniform directionalities, help to disperse stress caused by the laser that silicon chip matrix is born, it is ensured that after
The mechanical load performance of phase component mass production encapsulation.
Embodiment 2
As shown in Fig. 2, the present embodiment provides a kind of laser slotting structures of passivating back solar cell, including uniformly arrange
In in backside passivation film 3 several parallel arrangement septal lines 1 and intersect vertically with several parallel arrangement septal lines 1 several vertical
Arrange septal line 2, the present embodiment in silicon chip matrix backside passivation film using wavelength is certain and sizeable laser facula into
Row fluting, the backside passivation film includes but not limited to aluminium oxide, silica, silica, nitrogen-oxygen-silicon, silicon carbide and its difference
The lamination of combination, lamination film thickness are 250nm, and the laser facula uses wavelength for the square hot spot of 1064nm, stack membrane
On laser facula scale be 45um, in the region of cell backside export Ag/Ag-Al electrodes 4 and extension 0.5mm without laser
Fluting contributes to the stress for reducing surface passivation area loss and silicon chip matrix.
The arrangement parallel arrangement septal line 1 successively from top to bottom in silicon chip matrix backside passivation film 3, every two parallel arrangements
Line spacing between septal line 1 is 1.0mm, and the parallel arrangement septal line 1 includes the parallel reality slotted by above-mentioned laser facula
Parallel dotted lines the section 1-2, solid parallel lines section 1-1 of line segment 1-1 and unslotted are intervally arranged with parallel dotted lines section 1-2, parallel arrangement
Septal line 1 is matched with silicon chip matrix border, total length 155.25mm, and both ends and the distance range of silicon chip matrix border are
1mm, and the length of wherein solid parallel lines section 1-1 is 0.8mm, and the length of parallel dotted lines section 1-2 is 0.6mm；
The arrangement vertical arrangement septal line 2 successively from left to right in silicon chip matrix backside passivation film 3, every two vertical arrangements
Line spacing between septal line 2 is 0.7mm, and the vertical arrangement septal line 2 includes the vertical reality slotted by above-mentioned laser facula
Vertical dotted line the section 2-2, solid vertical line section 2-1 of line segment 2-1 and unslotted are intervally arranged with vertical dotted line section 2-2, vertical arrangement
Septal line 2 is matched with silicon chip matrix border, total length 155.25mm, and both ends and the distance range of silicon chip matrix border are
1mm, and the length of wherein solid vertical line section 2-1 is 1.2mm, and the length of vertical dotted line section 2-2 is 0.8mm；And solid parallel lines
It is in cross that section 1-1, which intersects arrangement with the centers solid vertical line section 2-1,.
Embodiment 3
As shown in figure 3, the present embodiment provides a kind of laser slotting structures of passivating back solar cell, including uniformly arrange
In in backside passivation film 3 several parallel arrangement septal lines 1 and intersect vertically with several parallel arrangement septal lines 1 several vertical
Arrange septal line 2, the present embodiment in silicon chip matrix backside passivation film using wavelength is certain and sizeable laser facula into
Row fluting, the backside passivation film includes but not limited to aluminium oxide, silica, silica, nitrogen-oxygen-silicon, silicon carbide and its difference
The lamination of combination, lamination film thickness are 175nm, and the laser facula uses wavelength for the circular light spot of 1064nm, on stack membrane
Laser facula scale be 60um, opened without laser in the region of cell backside export Ag/Ag-Al electrodes 4 and extension 0.2mm
Slot contributes to the stress for reducing surface passivation area loss and silicon chip matrix.
The arrangement parallel arrangement septal line 1 successively from top to bottom in silicon chip matrix backside passivation film 3, every two parallel arrangements
Line spacing between septal line 1 is 2.0mm, and the parallel arrangement septal line 1 includes the parallel reality slotted by above-mentioned laser facula
Parallel dotted lines the section 1-2, solid parallel lines section 1-1 of line segment 1-1 and unslotted are intervally arranged with parallel dotted lines section 1-2, parallel arrangement
Septal line 1 is matched with silicon chip matrix border, total length 158.5mm, and both ends and the distance range of silicon chip matrix border are
1.5mm, and the length of wherein solid parallel lines section 1-1 is 1.8mm, and the length of parallel dotted lines section 1-2 is 1.2mm；
The arrangement vertical arrangement septal line 2 successively from left to right in silicon chip matrix backside passivation film 3, every two vertical arrangements
Line spacing between septal line 2 is 1.5mm, and the vertical arrangement septal line 2 includes the vertical reality slotted by above-mentioned laser facula
Vertical dotted line the section 2-2, solid vertical line section 2-1 of line segment 2-1 and unslotted are intervally arranged with vertical dotted line section 2-2, vertical arrangement
Septal line 2 is matched with silicon chip matrix border, total length 158.5mm, and both ends and the distance range of silicon chip matrix border are
1.5mm, and the length of wherein solid vertical line section 2-1 is 1.0mm, and the length of vertical dotted line section 2-2 is 1.0mm；Solid parallel lines
The both ends of section 1-1 are connected separately with solid vertical line section 2-1, and two solid vertical line section 2-1 are distributed in the two of solid parallel lines section 1-1
Side.
Embodiment 4
It is the manufacture craft of passivating back solar cell below：
Step 1：PSG, while polished backside, removal boundary are gone to the positive making herbs into wool of silicon chip matrix progress, diffusion, cleaning
PN junction；Step 2：Silicon chip base substrate back surface, dry oxide growth form SiO2 film layers and ALD deposition A2O3, PECVD deposition
Si3N4 is overturn after forming the lamination passivating back film layer of 150nm, in silicon chip substrate front surface PN junction area PECVD deposited silicon nitrides
Antireflective passivation protection film layer；
Step 3：532nm lasers fluting is selected in back surface, the hot spot acted in overlayer passivation film layer is diameter
55um circular light spots are connected into backside passivation film laser slotting interleaved formula arrangement knot as shown in Figure 1 by the circular light spot
Structure：1 wire spacing of parallel arrangement septal line is 2.2mm, solid parallel lines section 1-1 length 1.8mm, parallel dotted lines section 1-2 length
1.2mm, solid parallel lines section 1-1 length account for the 60% of entire 1 total length of parallel arrangement septal line, 1 both ends of parallel arrangement septal line
With silicon chip matrix border at a distance of 0.75mm；2 wire spacing of vertical arrangement septal line is 1.5mm, solid vertical line section 2-1 length
The length of 2.4mm, vertical dotted line section 2-2 length 2.0mm, solid vertical line section 2-1 account for 2 total length of vertical arrangement septal line
54.5%, 2 both ends of vertical arrangement septal line are with silicon chip matrix border at a distance of 0.75mm；
Step 4：4 corresponding region laser of Ag/Ag-Al electrodes is exported without fluting, helps to reduce surface passivation region
Loss and silicon chip matrix stress；
Step 5：Last silk-screen printing simultaneously dries back side Ag/Ag-Al electrodes 4, Al back of the body electric fields, and overturning is printed and dried just
Face Ag electrodes, co-sintering front and back slurry penetrate antireflective passivation protection film layer and form good Ohmic contact, the back side is made
Passivating solar battery.
The above, the only preferred embodiment of the utility model, are not intended to limit the utility model, the utility model
Scope of patent protection be subject to claims, it is equivalent made by every specification and accompanying drawing content with the utility model
Structure change similarly should be included in the scope of protection of the utility model.
Claims (8)
1. a kind of laser slotting structure of passivating back solar cell, it is characterised in that：Including being uniformly arranged in backside passivation film
(3) between several parallel arrangement septal lines (1) and several vertical arrangements to intersect vertically with several parallel arrangement septal lines (1) on
Every line (2), parallel arrangement septal line (1) includes solid parallel lines section (1-1) void parallel with unslotted slotted by laser
Line segment (1-2), solid parallel lines section (1-1) are intervally arranged with parallel dotted lines section (1-2), and vertical arrangement septal line (2) includes by swashing
The solid vertical line section (2-1) of the radium-shine fluting of light and the vertical dotted line section (2-2) of unslotted, solid vertical line section (2-1) and vertical void
Line segment (2-2) is intervally arranged.
2. a kind of laser slotting structure of passivating back solar cell according to claim 1, it is characterised in that：It is described flat
The total length of row arrangement septal line (1) and vertical arrangement septal line (2) is equal, and parallel arrangement septal line (1) and vertical arrangement
The both ends of septal line (2) and the distance range of silicon chip matrix border are 0.5~1.5mm.
3. a kind of laser slotting structure of passivating back solar cell according to claim 1 or 2, it is characterised in that：Institute
State parallel arrangement septal line (1) line spacing range be 0.1~2.5mm, solid parallel lines section (1-1) length range be 0.2~
2.5mm, parallel dotted lines section (1-2) length range are 0.1~2.5mm, and the total length of solid parallel lines section (1-1) accounts between parallel arrangement
Every line (1) total length proportional region be 50%~100%.
4. a kind of laser slotting structure of passivating back solar cell according to claim 1 or 2, it is characterised in that：Institute
State vertical arrangement septal line (2) line spacing range be 0.1~2.5mm, solid vertical line section (2-1) length range be 0.2~
2.5mm, vertical dotted line section (2-2) length range are 0.1~2.5mm, and the total length of solid vertical line section (2-1) accounts between vertical arrangement
Every line (2) total length proportional region be 50%~100%.
5. a kind of laser slotting structure of passivating back solar cell according to claim 1, it is characterised in that：It is described flat
Row real segment (1-1) is arranged with solid vertical line section (2-1) interleaved.
6. a kind of laser slotting structure of passivating back solar cell according to claim 1, it is characterised in that：It is described flat
It is in cross that row real segment (1-1), which intersects arrangement with the center solid vertical line section (2-1),.
7. a kind of laser slotting structure of passivating back solar cell according to claim 1, it is characterised in that：It is described flat
The both ends of row real segment (1-1) are connected separately with solid vertical line section (2-1), and two solid vertical line sections (2-1) are distributed in parallel reality
The both sides of line segment (1-1).
8. a kind of laser slotting structure of passivating back solar cell according to claim 1, it is characterised in that：Described
Export Ag/Ag-Al electrodes (4) in backside passivation film (3), Ag/Ag-Al electrodes (4) and its 0~0.8mm of extension with inner region not
Solid parallel lines section of arranging (1-1) and solid vertical line section (2-1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820435625.4U CN207938618U (en) | 2018-03-29 | 2018-03-29 | A kind of laser slotting structure of passivating back solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820435625.4U CN207938618U (en) | 2018-03-29 | 2018-03-29 | A kind of laser slotting structure of passivating back solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207938618U true CN207938618U (en) | 2018-10-02 |
Family
ID=63656242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820435625.4U Active CN207938618U (en) | 2018-03-29 | 2018-03-29 | A kind of laser slotting structure of passivating back solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207938618U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108336161A (en) * | 2018-03-29 | 2018-07-27 | 通威太阳能（成都）有限公司 | A kind of solar cell and preparation method thereof of passivating back laser slotting |
-
2018
- 2018-03-29 CN CN201820435625.4U patent/CN207938618U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108336161A (en) * | 2018-03-29 | 2018-07-27 | 通威太阳能（成都）有限公司 | A kind of solar cell and preparation method thereof of passivating back laser slotting |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102938432B (en) | A kind of preparation method of MWT solar module | |
| CN106997910A (en) | P-type crystal silicon back contacts double-side cell structure and preparation method without front gate line | |
| CN106409956A (en) | N-type crystalline silicon double-sided solar cell structure and preparation method thereof | |
| CN104091842B (en) | Distributed local boron-doped double-face photoreceptive crystalline silicon solar cell and preparation method thereof | |
| CN108987516A (en) | Latticed two-sided direct-connected solar cell module and preparation method | |
| CN208127216U (en) | A kind of PERC back of solar cell laser slotting structure | |
| CN209056507U (en) | A kind of MWT hetero-junction silicon solar cell | |
| CN108666374A (en) | A kind of passivating back matrix point type laser slotting conductive structure | |
| CN103367540A (en) | Back passivation solar cell and manufacturing method thereof | |
| CN109473493A (en) | A kind of MWT hetero-junction silicon solar cell and preparation method thereof | |
| CN111524982A (en) | Solar cell | |
| CN102683478B (en) | A kind of back of solar cell electrode structure and preparation method thereof | |
| CN207938618U (en) | A kind of laser slotting structure of passivating back solar cell | |
| CN106952970A (en) | A kind of PERC batteries and preparation method thereof | |
| CN108987510A (en) | The direct-connected solar cell module of latticed single side and preparation method | |
| CN206672943U (en) | A kind of P-type crystal silicon back contacts double-side cell structure of no front gate line | |
| CN203674218U (en) | Crystalline silicon solar cell integrating MWP and passive emitter and rear cell technologies | |
| CN105720114B (en) | A kind of quantum-cutting transparency electrode for crystal silicon solar energy battery | |
| CN107046070A (en) | A kind of P-type crystal silicon battery structure and preparation method thereof | |
| CN108336161A (en) | A kind of solar cell and preparation method thereof of passivating back laser slotting | |
| CN206864485U (en) | A kind of P-type crystal silicon battery structure | |
| CN109037364A (en) | The two-sided direct-connected solar cell module of fragment perforation and preparation method | |
| CN103137716B (en) | Solar cell, solar battery group and preparation method thereof | |
| CN107785444B (en) | Solar battery | |
| CN109103299A (en) | The production method of the production method and its Facad structure of N-type double-sided solar battery |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |