CN207834348U - A kind of encapsulating structure, white light emitting diode and backlight module - Google Patents
A kind of encapsulating structure, white light emitting diode and backlight module Download PDFInfo
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- CN207834348U CN207834348U CN201721606966.5U CN201721606966U CN207834348U CN 207834348 U CN207834348 U CN 207834348U CN 201721606966 U CN201721606966 U CN 201721606966U CN 207834348 U CN207834348 U CN 207834348U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
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Abstract
The utility model provides one kind and can be applied to M2AX6The encapsulating structure of new phosphors color dot adjustment, including holder, thermoplasticity or thermosetting transparent protective layer, the fluorescence conversion layer of setting on the bracket；Holder is equipped with the blue chip position for blue-light LED chip to be arranged, the green light chip position for green LED chip to be arranged, and fluorescence conversion layer covers the blue chip position of blue-light LED chip and the green light chip position of green LED chip；Fluorescence conversion layer includes the first layer being from top to bottom arranged, the second layering；Thermoplasticity or thermosetting transparent protective layer are wrapped on fluorescence conversion layer.A kind of white light emitting diode and backlight module are also provided.By above structure, Mn can be made4+The M of excitation2AX6The color dot adjustment effect of new phosphors is more preferable.
Description
Technical field
The present invention relates to a kind of diode technologies fields, more particularly to can be applied to M2AX6The adjustment of new phosphors color dot
Encapsulating structure, white light emitting diode and backlight module.
Background technology
Wide colour gamut has become the new hot spot of field of backlights, and the requirement of consumer's color domain is also higher and higher.Traditional nitridation
Object rouge and powder is since its half-wave is wide, and it is difficult further to be promoted that NTSC is upper to a certain extent, and NTSC is confined to 90% substantially
Left and right.
With the wide Mn of ultra-narrow half-wave4+The M of excitation2AX6Structure novel fluorescent powder is less than 10nm since its half-wave is wide, has
NTSC can be promoted to 98% or more on the basis of conventional fluorescent powder, become research hotspot in recent years by very high excitation purity.
In backlight module, the colorfilter (CF) of difference screen is different, and the light that LED is sent out is caused to cross the color after shielding
The different degrees of change of point.Mn4+The M of excitation2AX6New phosphors, since wavelength, spectral shape are non-adjustable, the color dot of finished product
Not arbitrarily it is adjustable, for some special color dots take into account less than.Lead to cross colour temperature, the duv energy parameters after shielding in backlight module
Standard cannot be met.Mn4+The M of excitation2AX6The random adjustability of color dot is solved on the basis of new phosphors as needing to solve
The problem of.
Invention content
First purpose of the present invention is for overcome the deficiencies in the prior art, to provide one kind and can be applied to M2AX6It is novel glimmering
The encapsulating structure of light pink colour point adjustment, can make Mn4+The M of excitation2AX6The color dot adjustment effect of new phosphors is more preferable.
Second invention mesh of the present invention is to provide a kind of white light emitting diode.
Third invention mesh of the present invention is to provide a kind of backlight module.
In order to achieve the above object, the present invention uses following technical scheme：
One kind can be applied to M2AX6The encapsulating structure of new phosphors color dot adjustment, including holder, thermoplasticity or thermosetting property
Transparent protective layer, the fluorescence conversion layer of setting on the bracket；The holder is equipped with the indigo plant for blue-light LED chip to be arranged
Optical chip position, the green light chip position for green LED chip to be arranged, the fluorescence conversion layer cover the blue-light LED chip
Blue chip position and the green light chip position of the green LED chip；The fluorescence conversion layer includes first be from top to bottom arranged
Layering, the second layering；The thermoplasticity or thermosetting transparent protective layer are wrapped on the fluorescence conversion layer.
Preferably, the thickness of the first layer is 30-80um.
Preferably, the top surface of the first layer, the second layering is all set as roughening face.
Preferably, the roughening face is the surface of the alternate setting of concaveconvex structure.
Preferably, the bottom of the first layer is equipped with the first articulamentum, the bottom surface of first articulamentum is equipped with recessed
Portion；The top of second layering is all equipped with the second articulamentum, and the top surface of second articulamentum is equipped with protrusion；Described first point
The recess portion of layer is chimeric with the protrusion of the second layering.
One kind can be applied to M2AX6The white light emitting diode of new phosphors color dot adjustment, including the encapsulation knot
Structure, blue-light LED chip, green LED chip；The blue-light LED chip is arranged on the blue chip position, the green light LED
Chip is arranged on green light chip position；The fluorescence conversion layer covers the blue-light LED chip and the green light LED core
Piece；The first layer is layered for the first red fluorescence powder, and described second is layered as the layering of the second red fluorescence powder.
Preferably, the wavelength of the blue-light LED chip, in 430nm-460nm, the wavelength of the green LED chip exists
510nm-550nm。
Preferably, second red fluorescence powder is layered as internal density from top to bottom rises setting fluorescence in steps
The red fluorescence powder of powder is layered.
Preferably, first red fluorescence powder is layered as the red fluorescence powder layering of inner homogeneous setting fluorescent powder.
A kind of backlight module, including the white light emitting diode.
Compared with prior art, the invention has the advantages that：
By above structure, that is, the layering of two layers red fluorescence powder is set, wherein one layer closer to chip, it is therefore an objective to high temperature
Better reliability.It is uniformly distributed by the layering of the first red fluorescence powder, and the phosphor's density of the second red fluorescence powder layering is in
Existing ladder distribution, the phosphor's density hinge close to chip is high, further increases reliability.The respective top surfaces difference of two layerings is all
Equipped with roughening structure, make it is photochromic evenly brightness is high, cohesive force is good.
Description of the drawings
Fig. 1 is M2AX6:Mn4+Exemplary spectrum figure；
Fig. 2 is a kind of structural schematic diagram of white light emitting diode of the present invention；
Fig. 3 is the high colour gamut module schematic diagram of straight-down negative of the embodiment of the present invention 5；
Fig. 4 is the high colour gamut module schematic diagram of side entering type of the embodiment of the present invention 6.
In figure：
100-white light emitting diodes；101-holders；102-chips；103-fluorescence conversion layers；1031-the first point
Layer；1032-the second layering；
201-lens；202-pcb boards；203-backboards；204-diffuser plates；205-prismatic lens；206-diffusion sheets；
301-pcb boards；302-reflecting pieces；303-light guide plates；304-brightness enhancement films；305-diffusion barriers.
Specific implementation mode
In conjunction with attached drawing, the invention will be further described with specific embodiment.
It is described in the utility model to can be applied to M2AX6The encapsulating structure of new phosphors color dot adjustment, including holder, heat
Plasticity or thermosetting transparent protective layer, the fluorescence conversion layer being arranged on holder；Holder is equipped with for blue-light LED chip to be arranged
Blue chip position, the green light chip position for green LED chip to be arranged, fluorescence conversion layer covers the blue-light LED chip
Blue chip position and the green light chip position of green LED chip；Fluorescence conversion layer includes the first layer being from top to bottom arranged, second
Layering；Thermoplasticity or thermosetting transparent protective layer are wrapped on fluorescence conversion layer.
The thickness of first layer is 30-80um, and first layer, the second top surface being layered all are set as roughening face.Roughening face is
The surface of the alternate setting of concaveconvex structure.
As preferred mode, the bottom of first layer is all equipped with the first articulamentum, and the bottom surface of an articulamentum is equipped with
Recess portion；The top of second layering is all equipped with the second articulamentum, and the top surface of the second articulamentum is equipped with protrusion；First layer it is recessed
Portion is chimeric with the protrusion of the second layering.Holder has at least two grooves for chip and fluorescence conversion layer to be arranged；Holder
Lower section is equipped with the rib for reinforced support intensity.It is chimeric with protrusion by recess portion, so that each layering is mutually bolted together more
Securely.M is used in white light emitting diode2AX6New phosphors are arranged as red fluorescence powder in fluorescent powder glue-line, adopt
M can be allowed with above structure2AX6The adjustment effect of new phosphors is more preferable.
One kind described in the utility model can be applied to M2AX6The white light emitting diode of new phosphors color dot adjustment, by
Blue emission light, green emitted light and the mixing of red emission light send out white light.Including encapsulating structure described in the utility model, indigo plant
Light LED chip, green LED chip, blue-light LED chip is arranged on blue chip position, green LED chip is arranged in green light chip
On position, fluorescence conversion layer covers blue-light LED chip, green LED chip；First layer is layered for the first red fluorescence powder, and second
It is layered as the layering of the second red fluorescence powder.
The wavelength of blue-light LED chip is in 430nm-460nm, and the wavelength of green LED chip is in 510nm-550nm.
First red fluorescence powder is layered as the red fluorescence powder layering of inner homogeneous setting fluorescent powder, the second red fluorescence powder
Internal density is layered as in the steps red fluorescence powder layering for from top to bottom rising setting fluorescent powder.
First red fluorescence powder is by M2AX6:Mn4+The material composition of structure, wherein M are Li, Na, K, Rb, Cs；A be Ti,
Si、Ge、Zr；X is F, Cl, Br.
Ratio of second red fluorescence powder in red fluorescence powder is 0.01%-15%.Second red fluorescence powder by
CaAlSiN3:Eu、SrLiAl3N4:One or more compositions in Eu or QD.The wavelength of second red fluorescence powder is in 630nm-
670nm, half-wave width are 35nm to 110nm.Red emission light is by red fluorescence powder by absorbing blue light or green emission.
In order to keep the color of red fluorescence powder purer, the colour gamut of NTSC is allowed to get higher, wherein with adding for the second fluorescent powder
Enter, the value added of emitted luminescence intensity is less than or equal to it in the wave-length coverage of the 600nm to 630nm of the first red fluorescence powder
The value added of emitted luminescence intensity in the wave-length coverage of 630nm to 670nm.In red fluorescence powder, actually with the first red
Based on fluorescent powder, it (can be different wave length, the spectrum of the first fluorescent powder is either that the second red fluorescence powder, which is for adjusting color dot,
Containing Si, containing Ge or Ti, its spectrum is constant, so it can not adjust color dot), by the 600-630nm for limiting the first fluorescent powder
Wave-length coverage in emitted luminescence intensity value added less than or equal to its 630nm to 670nm wave-length coverage in emitted luminescence intensity
Value added, just limit the second red fluorescence powder being added it is short if wavelength, if it is wide with narrow half-wave, if wavelength is long, it is wide to match
Half-wave it is wide.For example, if the wavelength of the second red fluorescence powder is 630nm, half-wave width is 30nm, (Fig. 1) body on original peak
Existing left side 614nm, which increases, is equal to the right 647nm；If wavelength 650nm, the 70nm half-wave of the second red fluorescence powder is wide, can see
The value added of 647nm is more than 614nm.
As a preferred option：
The wavelength of second red fluorescence powder is 630nm, and half-wave is wide to be not more than 35nm；
The wavelength of second red fluorescence powder is more than 630nm, is less than or equal to 635nm, and half-wave is wide to be not more than 40nm；
The wavelength of second red fluorescence powder is more than 635nm, is less than or equal to 640nm, and half-wave is wide to be not more than 50nm；
The wavelength of second red fluorescence powder is more than 640nm, is less than or equal to 645nm, and half-wave is wide to be not more than 60nm；
The wavelength of second red fluorescence powder is more than 645nm, is less than or equal to 650nm, and half-wave is wide to be not more than 70nm；
The wavelength of second red fluorescence powder is more than 650nm, is less than or equal to 655nm, and half-wave is wide to be not more than 90nm；
The wavelength of second red fluorescence powder is more than 655nm, is less than or equal to 660nm, and half-wave is wide to be not more than 100nm；
The wavelength of second red fluorescence powder is more than 660nm, is less than or equal to 665nm, and half-wave is wide to be not more than 105nm；
The wavelength of second red fluorescence powder is more than 665nm, is less than 670nm, and half-wave is wide to be not more than 110nm；
The wavelength of second red fluorescence powder is equal to 670nm, and half-wave is wide to be not more than 110nm.
It is red to select suitable second by the wide restriction of the above-mentioned wavelength for the second red fluorescence powder and half-wave
Color fluorescent powder keeps mixed red fluorescence powder color purer, and the colour gamut of NTSC is higher.
In wavelength, the nonadjustable M of spectral shape2AX6:Mn4+On the basis of, different wave length is added and wavelength, spectral shape can
The second fluorescent powder adjusted, due to M2AX6:Mn4+The emission spectrum of fluorescent powder is almost unchanged (such as Fig. 1), shows the spectral shape of LED
It is that will not change, color dot is non-adjustable, and since the spectrum of the second fluorescent powder of addition is can to do different adjustings, so making
The spectrum of mixed fluorescent powder can also be adjusted, to realize M2AX6:Mn4+In device color point adjustable.Hardly reducing
M2AX6:Mn4+NTSC color gamut on the basis of, realize device different color dots all standing.
Blue emission light, green emitted light and red emission light distribution are in thermoplasticity or thermosetting transparent protective layer.
Embodiment 1
A kind of white light emitting diode is present embodiments provided, by blue emission light, green emitted light and red emission light
Common mixing sends out white light.Including can be applied to M2AX6It is the encapsulating structure of new phosphors color dot adjustment, blue-light LED chip, green
Light LED chip.Encapsulating structure includes holder, thermoplasticity or thermosetting transparent protective layer, the fluorescence conversion layer being arranged on holder；
Holder is equipped with the blue chip position for blue-light LED chip to be arranged, the green light chip position for green LED chip to be arranged.It is blue
Light LED chip is arranged on blue chip position, green LED chip is arranged on green light chip position, and fluorescence conversion layer covers blue light
LED chip, green LED chip.Fluorescence conversion layer includes the first layer being from top to bottom arranged, the second layering；Thermoplasticity or heat
Solidity transparent protective layer is wrapped on fluorescence conversion layer.
The wavelength of blue-light LED chip is in 450nm, and the wavelength of green LED chip is in 520nm.
The thickness of first layer is 30-80um, and first layer, the second top surface being layered all are set as roughening face.Roughening face is
The surface of the alternate setting of concaveconvex structure.First layer is layered for the first red fluorescence powder, and second is layered as the second red fluorescence powder
Layering.First red fluorescence powder is layered as the red fluorescence powder layering of inner homogeneous setting fluorescent powder, the second red fluorescence powder point
Layer is internal density in the steps red fluorescence powder layering for declining setting fluorescent powder.
First red fluorescence powder is by K2SiF6:Mn4+The material composition of structure, the second phosphor powder layer is by SrLiAl3N4:Eu groups
At wavelength 650nm, half-wave width is 45nm.Ratio of second red fluorescence powder in red fluorescence powder is composition 5%；With
The addition of the second fluorescent powder, the value added of emitted luminescence intensity in the wave-length coverage of the 600nm to 630nm of the first red fluorescence powder
The value added of the emitted luminescence intensity in wave-length coverage less than or equal to its 630nm to 670nm.
Blue emission light, green emitted light and red emission light distribution are in thermoplasticity or thermosetting transparent protective layer.
Red emission light is by red fluorescence powder by absorbing blue light or green emission.
The NTSC color gamut of light emitting diode in the present embodiment and simple K2SiF6:Mn4+The ratio reduction of colour gamut is no more than
1%.
Embodiment 2
Present embodiments provide a kind of white light emitting diode, and embodiment 1 is essentially identical, no longer for something in common
It repeats, difference is illustrated below：
Blue-light LED chip wavelength is 445nm, its wavelength of green light chip is 525nm.
Red fluorescence powder is made of the first red fluorescence powder, the second red fluorescence powder；First red fluorescence powder by
K2TiF6:Mn4+The material composition of structure, the second phosphor powder layer is by CaAlSiN3:Eu is formed, wavelength 670nm, and half-wave width is
90nm.Ratio of second red fluorescence powder in red fluorescence powder is composition 10%.
The NTSC color gamut of light emitting diode in the present embodiment and simple K2TiF6:Mn4+The ratio of colour gamut is reduced to 3%.
Embodiment 3
Present embodiments provide a kind of white light emitting diode, and embodiment 1 is essentially identical, no longer for something in common
It repeats, difference is illustrated below：
First red fluorescence powder is by K2GeF6:Mn4+The material composition of structure, the second Red phosphor layer by QD with
SrLiAl3N4:Eu is formed, wavelength 640nm, and half-wave width is 30nm.Ratio of second red fluorescence powder in red fluorescence powder
To form 8%,
The NTSC color gamut of light emitting diode in the present embodiment and simple K2GeF6:Mn4+The ratio of colour gamut is reduced to 1-2%
Embodiment 4
Present embodiments provide a kind of white light emitting diode, and embodiment 1 is essentially identical, no longer for something in common
It repeats, difference is illustrated below：
First red fluorescence powder is by K2GeF6:Mn4+The material composition of structure, the second Red phosphor layer by QD with
SrLiAl3N4:Eu is formed, wavelength 645nm, and half-wave width is 50nm.Ratio of second red fluorescence powder in red fluorescence powder
To form 0.05%,
The NTSC color gamut of light emitting diode in the present embodiment and simple K2GeF6:Mn4+Colour gamut ratio be reduced to 1-2%.
Embodiment 5
Present embodiments provide a kind of white light emitting diode, and embodiment 1 or embodiment 2 or embodiment 3 or implementation
Example 4 is essentially identical, and something in common is repeated no more, and is illustrated below to difference：
The bottom of second layering is all equipped with the first articulamentum, and the bottom surface of first articulamentum is equipped with recess portion；It is described
The top of second layering is all equipped with the second articulamentum, and the top surface of second articulamentum is equipped with protrusion；The first layer it is recessed
Portion is chimeric with the protrusion of the second layering.The holder has at least two grooves for chip and fluorescence conversion layer to be arranged；Institute
The lower section for stating holder is equipped with the rib for being used for reinforced support intensity.It is chimeric with protrusion by recess portion, keep each layering mutually assembled
Together more securely.
Backlight module of the present invention, including down straight aphototropism mode set and side entrance back module.
Embodiment 6
It is a kind of LED down straight aphototropism mode sets described in the present embodiment, which uses existing LED straight-down negatives
Back light module unit structure.LED down straight aphototropism mode sets are using light emitting diode of the present invention.
As shown in figure 3, LED down straight aphototropism mode sets include pcb board 202, optical lens 201, diffuser plate 204, prismatic lens
205, diffusion sheet 206, backboard 203.LED light emitting device 100 is set on pcb board 202, and optical lens 201 is set to LED light emitting device
100 tops, the pcb board 202 equipped with LED light emitting device 100 are fixedly arranged on 203 bottom of backboard, and diffuser plate 204 is pushed up set on backboard 203
Portion, prismatic lens 205 are set to 204 upper surface of diffuser plate, and diffusion sheet 206 is set to 205 upper surface of prismatic lens.
Embodiment 7
It is a kind of LED side entrance back modules 300 described in the present embodiment, which uses the existing sides LED
Enter formula back light module unit structure.Side entrance back module is using light emitting diode of the present invention.
As shown in figure 4, LED side entrance back modules include light guide plate 303, reflecting piece 302, brightness enhancement film 304, diffusion barrier
305.LED light emitting device 100 and pcb board 301 connect and are set to 303 side of light guide plate, and reflecting piece 302 and brightness enhancement film 304 are distinguished
Set on the lower surface and upper surface of light guide plate 303, diffusion barrier 305 is set to 304 upper surface of brightness enhancement film.
The invention is not limited in the above embodiments, if not departing from the present invention to the various changes or modifications of the present invention
Spirit and scope, if these modification and variations belong within the scope of the claim and equivalent technologies of the present invention, then this hair
It is bright to be also intended to comprising these changes and change.
Claims (10)
1. a kind of encapsulating structure, can be applied to M2AX6New phosphors color dot adjusts, which is characterized in that including holder, thermoplasticity
Or thermosetting transparent protective layer, the fluorescence conversion layer of setting on the bracket；The holder is equipped with for blue-ray LED to be arranged
The blue chip position of chip, the green light chip position for green LED chip to be arranged, the fluorescence conversion layer cover the blue light
The blue chip position of LED chip and the green light chip position of the green LED chip；The fluorescence conversion layer includes from top to bottom setting
The first layer set, the second layering；The thermoplasticity or thermosetting transparent protective layer are wrapped on the fluorescence conversion layer.
2. encapsulating structure according to claim 1, which is characterized in that the thickness of the first layer is 30-80um.
3. encapsulating structure according to claim 1, which is characterized in that the first layer, the second top surface being layered all are set
To be roughened face.
4. encapsulating structure according to claim 3, which is characterized in that the roughening face is the table of the alternate setting of concaveconvex structure
Face.
5. encapsulating structure according to claim 1, which is characterized in that the bottom of the first layer is equipped with the first connection
The bottom surface of layer, first articulamentum is equipped with recess portion；The top of second layering is all equipped with the second articulamentum, and described second connects
The top surface for connecing layer is equipped with protrusion；The recess portion of the first layer is chimeric with the protrusion of the second layering.
6. a kind of white light emitting diode, can be applied to M2AX6New phosphors color dot adjusts, which is characterized in that is wanted including right
Seek encapsulating structure, blue-light LED chip, the green LED chip described in 1 to 5 any claim；The blue-light LED chip setting
On the blue chip position, the green LED chip is arranged on green light chip position；The fluorescence conversion layer covers institute
State blue-light LED chip and the green LED chip；The first layer is layered for the first red fluorescence powder, second layering
It is layered for the second red fluorescence powder.
7. white light emitting diode according to claim 6, which is characterized in that the wavelength of the blue-light LED chip exists
430nm-460nm, the wavelength of the green LED chip is in 510nm-550nm.
8. white light emitting diode according to claim 6, which is characterized in that in second red fluorescence powder is layered as
Portion's density is in the steps red fluorescence powder layering for from top to bottom rising setting fluorescent powder.
9. white light emitting diode according to claim 6, which is characterized in that in first red fluorescence powder is layered as
Portion is uniformly arranged the red fluorescence powder layering of fluorescent powder.
10. a kind of backlight module, which is characterized in that including the white-light emitting two described in claim 6 to 9 any claim
Pole pipe.
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| CN201721606966.5U CN207834348U (en) | 2017-11-27 | 2017-11-27 | A kind of encapsulating structure, white light emitting diode and backlight module |
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| CN201721606966.5U CN207834348U (en) | 2017-11-27 | 2017-11-27 | A kind of encapsulating structure, white light emitting diode and backlight module |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110957310A (en) * | 2019-11-29 | 2020-04-03 | 武汉华星光电技术有限公司 | Backlight source, backlight module and manufacturing method of backlight source |
| WO2024051256A1 (en) * | 2022-09-07 | 2024-03-14 | 惠州视维新技术有限公司 | Backlight module, display device, and backlight module manufacturing method |
-
2017
- 2017-11-27 CN CN201721606966.5U patent/CN207834348U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110957310A (en) * | 2019-11-29 | 2020-04-03 | 武汉华星光电技术有限公司 | Backlight source, backlight module and manufacturing method of backlight source |
| WO2024051256A1 (en) * | 2022-09-07 | 2024-03-14 | 惠州视维新技术有限公司 | Backlight module, display device, and backlight module manufacturing method |
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