CN207819877U - A kind of mono- slice switch sensors of TMR of linear laser programming - Google Patents

Abstract

The utility model proposes a kind of mono- slice switch sensors of TMR of linear laser programming, including：Linear push-pull type magnetic resistance sensor, including：Substrate, pushing away, drawing magneto-resistor pickup arm on substrate, magneto-resistor sensing unit is TMR sensing units, free layer carries out magnetic field bias using bias layer, push away, draw magneto-resistor sensing unit reference layer direction of magnetization Hr on the contrary, and be that N, S are orientated with external magnetic field sensitive direction Hext, and perpendicular to free layer anisotropy Hk and the directions bias magnetic field Hb, it pushes away, draw magneto-resistor sensing unit and be arranged together in push arm region and region of drawing bow, and the inverse ferric magnetosphere direction of magnetization is written using laser programming technique；ASIC circuit, including bias capability module, read function module and output function module, bias capability module connect linear push-pull type magnetic resistance sensor power end, and read function module connects signal output end, and output function module connects the read function module.The utility model has low-power consumption, small size, easily operated advantage.

Description

A kind of mono- slice switch sensors of TMR of linear laser programming

Technical field

The utility model is related to magnetic sensor field, more particularly to a kind of mono- slice switches of the TMR of linear laser programming Sensor.

Background technology

Magneto-resistor switch sensor is widely used in consumer electronics, white domestic appliances, three tables（Ammeter, water meter, gas meter）, automobile And industrial application.The magnetic switch sensor of mainstream has Hall sensor and anisotropy at present（AMR）Sensor. For the power consumption of consumer electronics and three table application fields, honeywell switch sensor and AMR switch sensors up to microampere, this is to sacrifice It is obtained in the case of its working frequency, working frequency is tens hertz, and switching point is tens Gausses, in automobile, industry Using etc. need the environment of high working frequency, the power consumption of honeywell switch sensor and AMR switch sensors is milliampere grade, work Frequency is kHz rank.

Tunnel magneto resistance TMR elements, which are the sensor of sensing element, has the characteristics that low-power consumption, can be operated in kHz Even megahertz working frequency, power consumption can reach a microampere rank, and switch operating point is more than ten Gausses, is had highly sensitive and low Power consumption, response frequency is high, small feature.

Tunnel magneto resistance TMR switch sensors generally include linear push-pull type magnetic resistance sensor electric bridge and ASIC electricity Road, wherein tunnel magneto resistance TMR linear transducers electric bridge are for perceiving external magnetic field information, and ASIC circuit is used for sensor electricity The output voltage of bridge is transformed into high level and low level switching signal.

For the linear push-pull type magnetic resistance sensor electric bridges of TMR, generally use has single magnetic-field-sensitive direction by one Magneto-resistor sensing unit slice is pushed away such as X-axis, overturns 180 degree, is sliced with this to obtain the magnetic resistance sensor unit of drawing of X-axis, Then by binding two slices of connection, the advantage is that, preparation method is simple, and slice only need to correspond to a ferromagnetic reference knot Structure, and the disadvantage is that, need operate 2 slices be accurately positioned in the same plane, increase since operation error causes Sensor accuracy class loss possibility.

Using the design of the ferromagnetic reference of multi-layer film structure, by changing the ferromagnetic layer with inverse ferric magnetosphere coupling interaction The number of plies of the plural layers constituted with metal spacing layer, one of them is odd-level, another is the method for even level, Ke Yishi Now pushing away for opposite ferromagnetic reference and draws the manufacture of magneto-resistor sensing unit at magneto-resistor sensing unit, its shortcoming is that, due to It needs to introduce at least two kinds of multi-layer film structures when depositing plural layers, increases the complexity of micro fabrication.

Chinese Patent Application No. discloses a kind of using laser program-controlled heating magnetic field for the patent of CN201610821610.7 The method of annealing with realize magneto-resistor sensing unit is scanned, quickly heat inverse ferric magnetosphere to blocking temperature more than, simultaneously It can apply magnetic field along any direction in cooling procedure, can scan one by one, even scanning realizes that magneto-resistor sensing is single piecewise The orientation in the magnetic-field-sensitive direction of member in either direction may be implemented the uniaxial magneto-resistor on single slice using this method and pass The manufacture for feeling two kinds of magneto-resistor sensing units and its array with opposed orientation of unit, to overcome the essence of overturning slice It determines position and deposits the problem of the micro fabrication complexity of a variety of magnetic multi-layer film structures, and can realize single-chip magneto-resistor electricity Bridge batch micro operations.

Therefore, the manufacture for the linear push-pull type magnetic resistance sensor being singly sliced, Jin Erhe are realized using laser programming technique ASIC circuit forms switch magnetic resistance sensor, can solve the problems, such as above-mentioned positioning and micro fabrication complexity, to Obtain the manufacture of high-precision, highly sensitive and low-power consumption TMR switch sensors.

Utility model content

Therefore, this project proposes a kind of mono- slice switch sensors of TMR of linear laser programming, including：Linearly recommend Formula magnetic resistance sensor, the linear push-pull type magnetic resistance sensor include：Substrate, pushing away, drawing magnetoelectricity on the substrate Hinder pickup arm, described to push away, draw magneto-resistor pickup arm be respectively to push away, draw magneto-resistor sensing unit string and pass through series, parallel or string The both ends mouth structure being formed in parallel, it is described push away, draw magneto-resistor sensing unit string respectively by push away, draw magneto-resistor sensing unit series connection and At, the magneto-resistor sensing unit is TMR sensing units, including：Passivation layer, upper electrode layer, free layer, intermediate insulating layer, ginseng Examine layer, inverse ferric magnetosphere, seed layer, the seed layer and inverse ferric magnetosphere constitute lower electrode layer, the free layer using bias layer into Row magnetic field bias, it is described push away, draw magneto-resistor sensing unit reference layer direction of magnetization Hr on the contrary, and with external magnetic field sensitive direction Hext It is N, S orientation, and perpendicular to the free layer anisotropic orientation Hk and the directions bias magnetic field Hb, it is described to push away, draw magneto-resistor Sensing unit is arranged together in push arm region and region of drawing bow, and the inverse ferric magnetosphere magnetization side is written using laser programming technique To；ASIC circuit, the ASIC circuit include bias capability module, read function module and output function module, the biasing Function module connects the linear push-pull type magnetic resistance sensor, the read module and the function module power end, and wraps Reference voltage setter is included, the read function module connects the linear push-pull type magnetic resistance sensor signal output end and institute Reference voltage setter is stated, the output function module connects the read function module.

The magnetic resistance sensor unit is oval, two end toper of diamond shape or intermediate rectangular twin shaft symmetric shape, length Axis L is the directions N or S, short axle W.

The passivation layer be to the material of laser-light transparent, the upper electrode layer material be at least Cu, Al of 150 nm thickness, Au, Ti or Ta conductive metal material, to prevent by damage from laser；The intermediate insulating layer is Al2O3 or MgO material；It is described Inverse ferric magnetosphere is high obstruction material temperature；It is interconnected when passing through the long range lower electrode layer between the magneto-resistor sensing unit When, the lower electrode layer region is covered by the upper electrode layer region, to protect the lower electrode layer from laser Damage.

Using the second inverse ferric magnetosphere as the bias layer, and spin-exchange-coupled forms the biasing between the free layer Magnetic field Hb, the bias magnetic field Hb and the directions free layer anisotropy field Hk are each along the magneto-resistor sensing unit long axis The directions L；Or the bias layer is magnetic layer.

Laser programming technique write operation corresponding to the linear magnetoresistance switch sensor is divided to two progress, and first Step, the inverse ferric magnetosphere corresponding to the reference layer carry out direction of magnetization write operation, and second step corresponds to the free layer Second inverse ferric magnetosphere carry out direction of magnetization write operation, and the write operation temperature of second step be less than the first step write-in Operation temperature, said write temperature correspond to the blocking temperature of the inverse ferric magnetosphere respectively.

The linear push-pull type magnetic resistance sensor is full-bridge, half-bridge or quasi- bridge structure.

When the linear push-pull type magnetic resistance sensor is full-bridge, including the area that draws bow described in 2 push arm regions and 2 Domain, and 2 push arm regions either draw bow and region mutual near neighbor or are mixed into a push arm or region of drawing bow.

At least 50 um are separated by thermal insulation layer between the push arm region and the region of drawing bow.

The mono- slice switch sensors of TMR can be N monopole types switch sensor, S monopole types switch sensor, bipolar Type switch sensor is full polar form switch sensor.

The bias capability module is current source or voltage source with temperature compensation function.

For N, S monopole type switch sensor or bipolar switch sensor, the read function module includes 1 letter Number comparator, signal comparator is for full polar form switch sensor, and read function module includes 2 signal comparators, and 2 institutes State signal comparator directly be logic or relationship.

When the linear push-pull type magnetic resistance sensor electric bridge is half-bridge structure, output signal is directly connected to the signal Comparator, when the push-pull type magnetic resistance sensor electric bridge is full bridge structure, output signal passes through difference amplifier output difference Signal is then connected to the signal comparator.

The output function module is one of current switch, voltage switch, resistance switch or another switch.

The read function module further includes the filtering being connected with the push-pull type magnetic resistance sensor signal output end Device, amplifier, and the latch that is connected with the comparator, buffer.

The push-pull type magnetic resistance sensor electric bridge is deposited on the top layer of the ASIC circuit, or is located at two linings On bottom, and connected by binding.

Description of the drawings

Fig. 1 magnetic resistance sensor construction of switch figures；

The linear push-pull type magnetic resistance sensor slice maps of Fig. 2；

Fig. 3 TMR magneto-resistor magnetic thin film stack structures；

The linear push-pull type magnetic resistance sensor slice map of Fig. 4 full-bridges；

Fig. 5 push-pull bridge magnetic resistance sensor structure charts；

The linear push-pull type magnetic resistance sensor orientation-signal-on-off principle figures of Fig. 6；

Fig. 7 ASIC circuit structure charts；

Fig. 8 magneto-resistor switch sensor electrical connection graphs；

The full polar form magneto-resistor switch sensor electrical connection graphs of Fig. 9；

The linear push-pull type magneto-resistor switch sensors of Figure 10 and the ASIC locations drawing.

Specific implementation mode

It is new below in conjunction with this practicality to keep the purpose, technical scheme and advantage of the utility model embodiment clearer Attached drawing in type embodiment, the technical scheme in the utility model embodiment is clearly and completely described, it is clear that is retouched The embodiment stated is the utility model a part of the embodiment, instead of all the embodiments.

Below with reference to the accompanying drawings and in conjunction with the embodiments, the utility model is described in detail.

Embodiment one

Fig. 1 is magneto-resistor construction of switch figure, including two parts, and 1 is linear push-pull type magnetic resistance sensor, and 2 be ASIC electricity Road, wherein linear push-pull type magnetic resistance sensor 1 generates induction for external magnetic field source 3, external magnetic field source 3 is typically the pole N, S Permanent magnet, generated magnetic field is N or S, and ASIC circuit 2 is transformed into switch level-magnetic signature signal 4.

Fig. 2 is that linear push-pull type magnetic resistance sensor is sliced schematic diagram, including substrate 5, and pushes away magnetic on substrate 5 Resistance sensing unit arm 6, and draw magneto-resistor sensing unit and draw bow 7, it is respectively to push away, draw magnetoelectricity to push away, draw magneto-resistor pickup arm 6 and 7 Sensing unit string 8 is hindered by both ends mouth structure made of series, parallel or connection in series-parallel, is pushed away, is drawn magneto-resistor sensing unit string 8 and divide It is not connected in series by pushing away, drawing magneto-resistor sensing unit 10.Magneto-resistor sensing unit is TMR sensing units, magnetic multi-layer thin membrane stack Lamination is as shown in figure 3, include：It is passivation layer 22, upper electrode layer 21, free layer 19, intermediate insulating layer 18, reference layer 17, antiferromagnetic Layer 16, seed layer 15, seed layer 15 and inverse ferric magnetosphere 16 constitute lower electrode layer 14, and magnetic resistance sensor unit 10 can be ellipse The twin shaft symmetric shape of circle, two end toper of diamond shape or intermediate rectangular, longitudinal axis L are the directions N or S, short axle W, wherein freely Layer 19 using bias layer 20 carry out magnetic field bias, generally using the second inverse ferric magnetosphere as bias layer 20, and with free layer 19 it Between spin-exchange-coupled formed bias magnetic field Hb, bias magnetic field Hb and the free layer directions anisotropy field Hk are passed each along the magneto-resistor Feel unit longitudinal axis L direction, bias layer may be magnetic layer, pushes away, draws magneto-resistor sensing unit reference layer direction of magnetization Hr 11 With 12 on the contrary, and be that N, S are orientated with external magnetic field sensitive direction Hext, and perpendicular to free layer anisotropic orientation Hk and biasing The magnetic field directions Hb push away, draw magneto-resistor sensing unit and be arranged together in push arm region 6 and region 7 of drawing bow, and push arm region and draw bow At least 50 um width are separated using thermal insulation layer 9 between region, and the inverse ferric magnetosphere direction of magnetization is written using laser programming technique.

In addition, passivation layer is to the material of laser-light transparent, upper electrode layer material is at least Cu, Al of 150 nm thickness, Au, Ti or Ta conductive metal materials, to prevent by damage from laser, intermediate insulating layer is Al2O3 or MgO material, and inverse ferric magnetosphere is height Blocking temperature material, when being interconnected by the lower electrode layer described over long distances between magneto-resistor sensing unit, the lower electrode layer institute It is covered by the upper electrode layer region in region, to protect the lower electrode layer from damage from laser.

Laser programming technique write operation corresponding to linear magnetoresistance switch sensor is divided to two progress, the first step right The corresponding inverse ferric magnetosphere of the reference layer carries out direction of magnetization write operation, second step, institute corresponding to the free layer It states the second inverse ferric magnetosphere and carries out direction of magnetization write operation, and the write operation temperature of second step is less than the write operation of the first step Temperature, said write temperature correspond to the blocking temperature of the inverse ferric magnetosphere respectively.

Push-pull type linear magnetoresistance sensor shown in Fig. 2 is half-bridge structure, including 1 push arm region and 1 area that draws bow Domain, can also actually form full bridge structure as shown in figure 4, include 2 push arm regions 13 and 15,2 regions 14 and 16 of drawing bow, Two of which push arm region or two region neighbour arrangements of drawing bow, can also be mixed into 1 mixing push arm region and 1 mixing It draws bow region, then push arm region and region of drawing bow are separated by thermal insulation layer, further, it is also possible to form quasi- bridge structure, Fig. 5 For half-bridge structure and full bridge structure schematic diagram, including the push arm R01 and R02 that draws bow.

Fig. 6 is linear magnetoresistance sensor and its on-off principle figure, and Fig. 6 a are push-pull type half-bridge structure figure, including push arm R01 and the R02 that draws bow, Fig. 6 b and Fig. 6 c are respectively to push away magneto-resistor sensing unit and draw the orientation corresponding to magneto-resistor sensing unit Figure, Hr have found that Hf is free layer direction for reference layer, and Hb has found that Hext is outer magnetic field direction for bias layer, push away magneto-resistor sensing Unit and the reference layer direction for drawing magneto-resistor sensing unit are respectively the directions N and the directions S, and Fig. 6 d and Fig. 6 e are respectively push arm and draw The resistance versus magnetic field signal of arm, it can be seen that its curvilinear characteristic is linear character, and slope is on the contrary, Fig. 6 f-h are that push-pull type is linear The resistance versus magnetic field signal graph of magnetic resistance sensor and corresponding three kinds of switch sensors, that is, ambipolar, monopole type and full polar form switch The operating fields of sensor-reference signal section, Hop, Hrp are respectively magnetic manipulation field and reply this, when Hop and Hrp distinguishes When positioned at 0 magnetic field both sides or side or when two include two regions Hop, Hrp and-Hop ,-Hrp, respectively obtain complete Polar form switch sensor, monopole type switch sensor and full polar form switch sensor, Fig. 6 i are opening for full polar form switch sensor Powered-down flat-magnetic chart, Fig. 6 j and Fig. 6 k are respectively switch level-magnetic field of N polarity switch sensor and S polar form switch sensors Figure, Fig. 6 l are full polar form switch sensor switch level-magnetic chart.

Fig. 7 is ASIC circuit structure chart, including bias capability module, read function module and output function module are described Bias capability module connects the linear push-pull type magnetic resistance sensor, the read module and the function module power end, And include reference voltage setter, the read function module connects the linear push-pull type magnetic resistance sensor signal output end With the reference voltage setter, the output function module connects the read function module, wherein bias capability module is Current source with temperature compensation function or voltage source.

Fig. 8 is push-pull type linear magnetoresistance sensor and its ASIC circuit figure, and 700 be reference voltage setter, for setting Vop and Vrp reference signals are set, 701 be linear push-pull type magnetic resistance sensor, is full bridge structure, and 703 be signal comparator, is led to The output signal and reference voltage setter Vop and Vrp reference signal for crossing linear push-pull type magnetic resistance sensor are compared, from And export low and high level, and drive output function module 704, the output function module can be current switch, voltage switch, One of resistance switch or another switch are 1 triode voltage switch in figure.

Fig. 9 is full polar form magneto-resistor construction of switch figure, including 1 N polarity switch sensor and 1 S polar form switch sensing Device, corresponding two comparators 805 and 806, and two comparator signals pass through logic or relationship 807.

In addition, when can also be seen that push-pull type magnetic resistance sensor electric bridge is 701 structure of full-bridge from Fig. 8, output signal is logical 702 output difference signal of difference amplifier is crossed, the signal comparator is then connected to, when linear push-pull type magnetic resistance sensor When electric bridge is half-bridge structure, output signal is directly connected to the signal comparator.In addition, the read function module can be with Include filter, the amplifier being connected with the push-pull type magnetic resistance sensor signal output end, and with the comparator Connected latch, buffer.

Figure 10 is the connection figure of linear push-pull type magnetic resistance sensor and ASIC circuit, in Figure 10 a, the linear push-pull type Magnetic resistance sensor 40 is deposited on the top layer of the ASIC circuit 50, in Figure 10 b, the linear push-pull type magnetic resistance sensor 40 It is located on two substrates with the ASIC circuit 50, and passes through 60 connection of binding.

Claims (15)

1. a kind of mono- slice switch sensors of TMR of linear laser programming, which is characterized in that including：Linear push-pull type magneto-resistor Sensor, the linear push-pull type magnetic resistance sensor include：Substrate, pushing away, drawing magneto-resistor pickup arm on the substrate, It is described that push away, draw magneto-resistor pickup arm be respectively to push away, draw magneto-resistor sensing unit string and pass through made of series, parallel or connection in series-parallel Both ends mouth structure, described to push away, draw magneto-resistor sensing unit string and be connected in series respectively by pushing away, drawing magneto-resistor sensing unit, the magnetic Resistance sensing unit is TMR sensing units, including：Passivation layer, upper electrode layer, free layer, intermediate insulating layer, reference layer, anti-iron Magnetosphere, seed layer, the seed layer and inverse ferric magnetosphere constitute lower electrode layer, and the free layer is inclined using bias layer progress magnetic field It sets, it is described to push away, draw magneto-resistor sensing unit reference layer direction of magnetization Hr on the contrary, and being N, S with external magnetic field sensitive direction Hext It is orientated, and perpendicular to the free layer anisotropic orientation Hk and the directions bias magnetic field Hb, it is described to push away, draw magneto-resistor sensing unit It is arranged together in push arm region and region of drawing bow, and the inverse ferric magnetosphere direction of magnetization is written using laser programming technique；ASIC Circuit, the ASIC circuit include bias capability module, read function module and output function module, the bias capability module The linear push-pull type magnetic resistance sensor, the read function module and output function modular power source end are connected, and is wrapped Reference voltage setter is included, the read function module connects the linear push-pull type magnetic resistance sensor signal output end and institute Reference voltage setter is stated, the output function module connects the read function module.

2. a kind of mono- slice switch sensors of TMR of linear laser programming according to claim 1, which is characterized in that institute It is oval, two end toper of diamond shape or intermediate rectangular twin shaft symmetric shape to state magneto-resistor sensing unit, and longitudinal axis L is N or the side S To short axle W.

3. a kind of mono- slice switch sensors of TMR of linear laser programming according to claim 1, which is characterized in that institute It is to the material of laser-light transparent to state passivation layer, and the upper electrode layer material is Cu, Al, Au, Ti or Ta of at least 150 nm thickness Conductive metal material, to prevent by damage from laser；The intermediate insulating layer is Al2O3 or MgO material；The inverse ferric magnetosphere is Height obstruction material temperature；When being interconnected by the lower electrode layer described over long distances between the magneto-resistor sensing unit, the lower electricity Pole layer region is covered by the upper electrode layer region, to protect the lower electrode layer from damage from laser.

4. a kind of mono- slice switch sensors of TMR of linear laser programming according to claim 1, which is characterized in that adopt Use the second inverse ferric magnetosphere as the bias layer, and spin-exchange-coupled forms the bias magnetic field Hb, institute between the free layer Bias magnetic field Hb and the directions free layer anisotropy field Hk are stated each along the magneto-resistor sensing unit longitudinal axis L direction；Or Bias layer described in person is magnetic layer.

5. a kind of mono- slice switch sensors of TMR of linear laser programming according to claim 3, which is characterized in that institute It states the laser programming technique write operation corresponding to the mono- slice switch sensors of TMR and is divided to two progress, the first step, to the reference The corresponding inverse ferric magnetosphere of layer carries out direction of magnetization write operation, and second step carries out magnetic to the corresponding inverse ferric magnetosphere of the free layer Change direction write operation, and the write operation temperature of second step is less than the write operation temperature of the first step, said write temperature point The blocking temperature of the inverse ferric magnetosphere is not corresponded to.

6. a kind of mono- slice switch sensors of TMR of linear laser programming according to claim 1, which is characterized in that institute It is full-bridge, half-bridge or quasi- bridge structure to state linear push-pull type magnetic resistance sensor.

7. a kind of mono- slice switch sensors of TMR of linear laser programming according to claim 1, which is characterized in that institute When to state linear push-pull type magnetic resistance sensor be full-bridge, including region of drawing bow described in 2 push arm regions and 2, and 2 institutes It states push arm region and either draws bow and region mutual near neighbor or be mixed into a push arm or region of drawing bow.

8. a kind of mono- slice switch sensors of TMR of linear laser programming according to claim 1, which is characterized in that institute It states and at least 50 um is separated by thermal insulation layer between push arm region and the region of drawing bow.

9. a kind of mono- slice switch sensors of TMR of linear laser programming according to claim 1, which is characterized in that institute It can be N monopole types switch sensor, S monopole types switch sensor, bipolar switch sensing to state the mono- slice switch sensors of TMR Device is full polar form switch sensor.

10. a kind of mono- slice switch sensors of TMR of linear laser programming according to claim 1, which is characterized in that institute It is current source or voltage source with temperature compensation function to state bias capability module.

11. a kind of mono- slice switch sensors of TMR of linear laser programming according to claim 1, which is characterized in that right In N, S monopole type switch sensor or bipolar switch sensor, the read function module includes 1 signal comparator, For signal comparator for full polar form switch sensor, read function module includes 2 signal comparators, and 2 signal ratios Compared with device directly be logic or relationship.

12. a kind of mono- slice switch sensors of TMR of linear laser programming according to claim 11, which is characterized in that The linear push-pull type magnetic resistance sensor is half-bridge structure, and output signal is directly connected to the signal comparator；Or, described Linear push-pull type magnetic resistance sensor is full bridge structure, and output signal is then connected by difference amplifier output difference signal To the signal comparator.

13. a kind of mono- slice switch sensors of TMR of linear laser programming according to claim 1, which is characterized in that institute It is one of current switch, voltage switch, resistance switch or another switch to state output function module.

14. a kind of mono- slice switch sensors of TMR of linear laser programming according to claim 11, which is characterized in that The read function module further includes the filter being connected with the push-pull type magnetic resistance sensor signal output end, amplification Device, and the latch that is connected with the comparator, buffer.

15. a kind of mono- slice switch sensors of TMR of linear laser programming according to claim 1, which is characterized in that institute It states push-pull type magnetic resistance sensor and is deposited on the top layer of the ASIC circuit, or be located on two substrates, and pass through Binding connection.