CN207817261U - Semiconductor laser - Google Patents
Semiconductor laser Download PDFInfo
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- CN207817261U CN207817261U CN201820109584.XU CN201820109584U CN207817261U CN 207817261 U CN207817261 U CN 207817261U CN 201820109584 U CN201820109584 U CN 201820109584U CN 207817261 U CN207817261 U CN 207817261U
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- China
- Prior art keywords
- optical fiber
- semiconductor laser
- feux rouges
- stop collar
- pedestal
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Abstract
The utility model discloses a kind of semiconductor laser, including pedestal, infrared chip, red light chips, plate feux rouges narrowband reflection film, coupled lens, center is equipped with the ceramic ferrule and stop collar of optical fiber, infrared chip, plate feux rouges narrowband reflection film, coupled lens and stop collar are arranged at intervals on pedestal successively along first direction, ceramic ferrule is located in stop collar and optical fiber has optical fiber incidence end and fibre optical transmission end, red light chips are set to along the second direction intersected with first direction on pedestal, plane where plating feux rouges narrowband reflection film intersects with second direction, the feux rouges that red light chips are got forms a focus point after being coupled together into coupled lens with the infrared laser got from infrared chip after plating feux rouges narrowband reflection film reflection, focus point is beaten in optical fiber incidence end.The semiconductor laser of the utility model ensures that the encapsulation volume that laser is reduced under the premise of semiconductor laser has feux rouges instruction, use are relatively convenient.
Description
Technical field
The utility model is related to laser technology fields, more particularly to a kind of semiconductor laser.
Background technology
Laser aid is a kind of device that can emit laser, has been obtained in industry, medicine and scientific research field extensive
Using.
Infrared laser (such as 808nm, 980nm or 1064nm) conduct is widely applied in industry, medicine and scientific research field
Light source, but infrared laser belongs to black light, needs the propagation path and photograph of knowing these light in many cases in the application
Position is penetrated, so the feux rouges of visible wavelength is just needed to indicate, to show path and irradiation position that infrared laser is propagated.
Tradition has the infrared laser and red laser that the laser aid of feux rouges instruction generally includes split settings, red
The feux rouges that the infrared laser of outer laser transmitting emits with red laser is so caused entire by being got after optical-fiber bundling device
The encapsulation volume of laser aid is larger, thereby using inconvenience.
Utility model content
Based on this, it is necessary to inconvenient to use to bring greatly for the laser aid encapsulation volume with infrared instruction
The problem of a kind of semiconductor laser that encapsulation volume is smaller is provided.
A kind of semiconductor laser, including pedestal, infrared chip, red light chips, plating feux rouges narrowband reflection film, coupling are thoroughly
Mirror, center are equipped with the ceramic ferrule and stop collar of optical fiber, the infrared chip, the plating feux rouges narrowband reflection film, described
Coupled lens and the stop collar are arranged at intervals at along first direction on the pedestal successively, and the ceramic ferrule is located at described
In stop collar and there is the optical fiber optical fiber incidence end close to the coupled lens and the optical fiber far from the coupled lens to send out
End is penetrated, the red light chips are set to along the second direction intersected with the first direction on the pedestal, and the plating feux rouges is narrow
Plane where band reflectance coating intersects with the second direction, and the feux rouges that the red light chips are got is anti-by the plating feux rouges narrowband
It penetrates after film reflects and forms a focusing with after being coupled together into the coupled lens from the infrared laser that the infrared chip is got
Point, the focus point are beaten in the optical fiber incidence end.
Semiconductor laser provided by the utility model, the feux rouges that red light chips are got can indicate what infrared chip was got
The propagation path and irradiation position of infrared laser, and infrared chip is integrated on pedestal simultaneously with red light chips, avoiding will be red
Outer chip and red light chips split settings, so reduce laser under the premise of ensureing that there is semiconductor laser feux rouges to indicate
The encapsulation volume of device, use are relatively convenient.
The first direction is vertical with the second direction in one of the embodiments, the plating feux rouges narrowband reflection
Plane where film intersects with the first direction and the second direction.
The semiconductor laser further includes plane mirror in one of the embodiments, the optical fiber incidence end with it is described
Fibre optical transmission end is concordant with the both ends of the ceramic ferrule respectively, and being equipped with the ceramic ferrule for the plane mirror is described
One end of optical fiber incidence end be affixed merging with the coupled lens interval be arranged, the focus point be located at the plane mirror with it is described
On the binding face of ceramic ferrule.
The semiconductor laser further includes tail optical fiber and the connection that is socketed on outside the tail optical fiber in one of the embodiments,
Part, the connector are detachably connected with the stop collar, and the tail optical fiber includes tail optical fiber incidence end and tail optical fiber transmitting terminal, the tail
Fine incidence end is docked with the fibre optical transmission end.
The connector is socketed with the stop collar in one of the embodiments,.
The coupled lens are aspherical coupled lens in one of the embodiments,.
In one of the embodiments, the semiconductor laser further include be set on the pedestal first anode,
First cathode, the second anode and the second cathode, first anode are electrically connected with the infrared chip with first cathode,
Second anode is electrically connected with the red light chips with second cathode.
The one end of the pedestal far from the stop collar is equipped with multiple spaced positioning in one of the embodiments,
Hole, first anode, first cathode, second anode and second cathode are arranged in corresponding multiple respectively
It is fixed in the location hole.
The semiconductor laser further includes protective case in one of the embodiments, and the protective case is socketed on described
Pedestal is outer and surrounds the infrared chip, the red light chips, the plating feux rouges narrowband reflection film and the coupled lens, described
One end of stop collar is located in the protective case, and the other end of the stop collar stretches out the protective case.
The pedestal is made by oxygen-free copper is gold-plated in one of the embodiments,.
Description of the drawings
Fig. 1 is the structure chart for the semiconductor laser that one embodiment of the utility model provides；
Fig. 2 is the front view of the part-structure of the semiconductor laser provided in Fig. 1；
Fig. 3 is the vertical view of the part-structure of the semiconductor laser provided in Fig. 2；
Fig. 4 is the light path principle figure of the semiconductor laser provided in Fig. 1；
Fig. 5 is the structure chart for the semiconductor laser that another embodiment of the utility model provides.
Specific implementation mode
The utility model is more fully retouched below with reference to relevant drawings for the ease of understanding the utility model,
It states.The preferred embodiment of the utility model is given in attached drawing.But the utility model can in many different forms come in fact
It is existing, however it is not limited to embodiment described herein.Make public affairs to the utility model on the contrary, purpose of providing these embodiments is
The understanding for opening content is more thorough and comprehensive.
It should be noted that when element is referred to as " being fixed on " another element, it can be directly on another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " horizontal ", " left side ",
" right side " and similar statement are for illustrative purposes only.
Unless otherwise defined, all of technologies and scientific terms used here by the article is led with the technology for belonging to the utility model
The normally understood meaning of technical staff in domain is identical.Terminology used in the description of the utility model herein only be
The purpose of description specific embodiment, it is not intended that in limitation the utility model.Term " and or " used herein includes
Any and all combinations of one or more relevant Listed Items.
- Fig. 3 refering to fig. 1, a kind of semiconductor laser 100 of one preferred embodiment of the utility model offer, including pedestal 10,
Infrared chip 21, red light chips 22, plating feux rouges narrowband reflection film 30, coupled lens 40, optical fiber 51 (referring to Fig. 4), ceramic contact pin
Body 52 and stop collar 60.Wherein, infrared chip 30 is chip of the exportable wavelength in infrared band, and red light chips 22 are can
Output wavelength is in the chip of red spectral band, and feux rouges can be reflected and infrared laser is allowed to penetrate by plating feux rouges narrowband reflection film 30, coupling
Closing lens 40 can be by two kinds of different wave length optically coupling to a focus point, and optical fiber 51 is that one kind is fine made of glass or plastics
Dimension can be used as light conduction tool, and optical fiber 51 is arranged in the centre bore of ceramic ferrule 52, and stop collar 60 can limit optical fiber 51
Position.
Infrared chip 21, plating feux rouges narrowband reflection film 30, coupled lens 40 and stop collar 60 are spaced successively along first direction
It is set on pedestal 10, ceramic ferrule 52 is located in stop collar 60 and optical fiber has optical fiber incidence end 511 and fibre optical transmission end
512, red light chips 22 are set to along the second direction intersected with first direction on pedestal 10, the feux rouges warp that red light chips 22 are got
It crosses after plating feux rouges narrowband reflection film 30 reflects and enters coupled lens 40, the infrared laser that infrared chip 21 is got at this time also enters coupling
Lens 40 are closed, infrared laser forms a focus point with feux rouges under the action of coupled lens 40, which beats in optical fiber incidence
End 511, i.e. infrared laser is transferred out with feux rouges coupled in common into optical fiber 51 and from fibre optical transmission end 512, and feux rouges can refer at this time
Show path and the irradiation position of infrared laser, and since infrared chip 21 and red light chips 22 are integrated in simultaneously on pedestal 10, keeps away
Exempt from infrared chip 21 and 22 split settings of red light chips, so in the premise for ensureing that semiconductor laser has feux rouges instruction
Under reduce the encapsulation volume of laser, use is relatively convenient.
In the present embodiment, pedestal 10 includes bottom plate 11 and two end plates 12, and two end plates 12 are connected to bottom plate 11
Both ends to form the U-shaped of opening upwards, infrared chip 21, red light chips 22, plating feux rouges narrowband reflection film 30 and coupling are saturating
Mirror 40 may be contained on bottom plate 11, and wherein end plate 12 offers stop collar mounting hole, and one end of stop collar 60 is arranged in limit
It covers in mounting hole, the other end of stop collar 60 is vacantly arranged.And pedestal 10 is made using oxygen-free copper is gold-plated, is conducive to dissipate
Heat, and convenient for the welding of infrared chip 21 and red light chips 22.
Fig. 3 is please referred to, specifically, semiconductor laser 100 includes the first anode 71, the first cathode 72, the second anode 73
And second cathode 74, the first anode 71 are electrically connected with infrared chip 21 with the first cathode 72, the second positive 73 and second cathode
74 are electrically connected with red light chips 22, and such infrared chip 21 can be connected by the first anode 71 and the first cathode 72 with power supply
Connect, red light chips 22 73 are connect with the second cathode 74 with power supply by the second anode, you can with realization to infrared chip 21 with it is red
The independent control of optical chip 22.It, will be red after indicating good position by control red light chips 22 such as when using in the medical field
Optical chip 22 is closed, and the work of infrared chip 21 is then controlled.
First anode 71, first the 72, second anode 73 of cathode and the second cathode 74 are arranged at intervals at pedestal 10 far from limit
One end of position set 60.More specifically, above-mentioned another end plate 12 offers multiple location holes, preferably four, the first anode 71,
One the 72, second anode 73 of cathode is arranged in the second cathode 74 in corresponding four location holes fixed respectively.
In the present embodiment, above-mentioned first direction (conduction orientation of infrared laser) and second direction (the transmission side of feux rouges
To) vertically, and plate feux rouges narrowband reflection film 30 and be located on the conducting path of infrared laser, it is flat where plating feux rouges narrowband reflection film 30
Face is intersected with first direction with second direction, so be can avoid plating feux rouges narrowband reflection film 30 and is set to deviation infrared laser biography
The position of guiding path further reduces the volume of the semiconductor laser 100, and plating feux rouges narrowband reflection film 30 will not be done
Relate to the conduction of infrared laser.
Coupled lens 40 are aspherical coupled lens, and can coupling efficiency 95% be increased to using aspherical focussing lens
More than.
In the present embodiment, semiconductor laser 100 further includes plane mirror 80, optical fiber incidence end 511 and fibre optical transmission end
512 is concordant with the both ends of ceramic ferrule 52 respectively, and plane mirror 80 is equipped with one end of optical fiber incidence end 511 with ceramic ferrule 52
It fits and is spaced with coupled lens 40 and is arranged, focus point is located on the binding face of plane mirror 80 and optical fiber 51.It is flat by being arranged
Face mirror 80 can ensure that focus point is just beaten in the end of optical fiber 51, and plane mirror 80 can also stop that ceramic ferrule 52 is touched
To coupled lens 40, to protect coupled lens 40.
Specifically, plane mirror 80 is set in stop collar 60, and in other embodiments, plane mirror 80, which can also be arranged, to be limited
Outside position set 60, the part of ceramic ferrule 52 is stretched out outside protective case 60 at this time namely the part of optical fiber 51 is stretched out outside protective case 60,
It is not limited herein.
Refering to Fig. 5, in the present embodiment, semiconductor laser 100 further includes tail optical fiber 91 and the company that is socketed on outside tail optical fiber 91
Fitting 92, connector 92 are detachably connected with stop collar 60, and tail optical fiber 60 includes tail optical fiber incidence end and tail optical fiber transmitting terminal, and tail optical fiber is incident
End is docked with fibre optical transmission end 512, and tail optical fiber 91 can lengthen the length of optical fiber 51, and connector 92 detachably connects with stop collar 60
It connects and is conveniently replaced different tail optical fibers 91.Specifically, connector 92 is sleeve, and is socketed on the part of tail optical fiber 91, that is, is connected
The length of part 92 is less than the length of tail optical fiber, in other embodiments, the length of connector 92 can with the equal length of tail optical fiber 91,
So that whole tail optical fibers 91 are located in connector 92.
Further, connector 92 is socketed with stop collar 60, and in other embodiments, connector 92 can be with 60 spiral shell of stop collar
Line connects, and is not limited thereto.
Semiconductor laser 100 further includes protective case 93, protective case 93 be socketed on pedestal 10 it is outer and surround infrared chip 21,
Red light chips 22, plating feux rouges narrowband reflection film 30 and coupled lens 40, one end of stop collar 60 are located in protective case 93, stop collar
60 other end stretches out outside protective case 93, and the one of the first anode 71, first the 72, second anode 73 of cathode and the second cathode 74
End is respectively positioned in protective case 93, the equal projection of the other end of the first anode 71, first the 72, second anode 73 and the second cathode 74 of cathode
Go out protective case 93.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed,
But it should not be understood as limiting the scope of the patent of the utility model.It should be pointed out that for the common of this field
For technical staff, without departing from the concept of the premise utility, various modifications and improvements can be made, these all belong to
In the scope of protection of the utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (10)
1. a kind of semiconductor laser, which is characterized in that including pedestal, infrared chip, red light chips, plating feux rouges narrowband reflection
Film, coupled lens, center are equipped with the ceramic ferrule and stop collar of optical fiber, and the infrared chip, the plating feux rouges narrowband are anti-
It penetrates film, the coupled lens and the stop collar to be arranged at intervals at successively on the pedestal along first direction, the ceramic contact pin
Body is located in the stop collar and the optical fiber has the optical fiber incidence end of the close coupled lens and the separate coupling saturating
The fibre optical transmission end of mirror, the red light chips are set to along the second direction intersected with the first direction on the pedestal, institute
Plane where stating plating feux rouges narrowband reflection film intersects with the second direction, and the feux rouges that the red light chips are got passes through the plating
Feux rouges narrowband reflection film reflection after with from the infrared laser that the infrared chip is got together entrance the coupled lens couple after
A focus point is formed, the focus point is beaten in the optical fiber incidence end.
2. semiconductor laser according to claim 1, which is characterized in that the first direction hangs down with the second direction
Directly, plane where the plating feux rouges narrowband reflection film intersects with the first direction and the second direction.
3. semiconductor laser according to claim 1, which is characterized in that the semiconductor laser further includes plane
Mirror, the optical fiber incidence end and the fibre optical transmission end are concordant with the both ends of the ceramic ferrule respectively, the plane mirror
It is affixed to merge with the one end of the ceramic ferrule equipped with the optical fiber incidence end and be arranged with the coupled lens interval, it is described poly-
Focus is located on the binding face of the plane mirror and the ceramic ferrule.
4. semiconductor laser according to claim 1, which is characterized in that the semiconductor laser further include tail optical fiber and
The connector being socketed on outside the tail optical fiber, the connector are detachably connected with the stop collar, and the tail optical fiber includes that tail optical fiber enters
End and tail optical fiber transmitting terminal are penetrated, the tail optical fiber incidence end is docked with the fibre optical transmission end.
5. semiconductor laser according to claim 4, which is characterized in that the connector is socketed with the stop collar.
6. semiconductor laser according to claim 1, which is characterized in that the coupled lens are that aspherical coupling is saturating
Mirror.
7. semiconductor laser according to claim 1, which is characterized in that the semiconductor laser further includes being set to
The first anode, the first cathode, the second anode on the pedestal and the second cathode, first anode are equal with first cathode
It is electrically connected with the infrared chip, second anode is electrically connected with the red light chips with second cathode.
8. semiconductor laser according to claim 7, which is characterized in that the one end of the pedestal far from the stop collar
Equipped with multiple spaced location holes, first anode, first cathode, second anode and second cathode
It is arranged in respectively in corresponding multiple location holes fixed.
9. according to claim 1-8 any one of them semiconductor lasers, which is characterized in that the semiconductor laser also wraps
Protective case is included, the protective case is socketed on outside the pedestal and surrounds the infrared chip, the red light chips, the plating feux rouges
One end of narrowband reflection film and the coupled lens, the stop collar is located in the protective case, the other end of the stop collar
Stretch out the protective case.
10. semiconductor laser according to claim 1, which is characterized in that the pedestal by oxygen-free copper it is gold-plated making and
At.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820109584.XU CN207817261U (en) | 2018-01-19 | 2018-01-19 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820109584.XU CN207817261U (en) | 2018-01-19 | 2018-01-19 | Semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207817261U true CN207817261U (en) | 2018-09-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820109584.XU Active CN207817261U (en) | 2018-01-19 | 2018-01-19 | Semiconductor laser |
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|---|---|
| CN (1) | CN207817261U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129956A (en) * | 2019-12-07 | 2020-05-08 | 武汉高跃科技有限责任公司 | Multi-chip pulse tail laser assembly |
-
2018
- 2018-01-19 CN CN201820109584.XU patent/CN207817261U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129956A (en) * | 2019-12-07 | 2020-05-08 | 武汉高跃科技有限责任公司 | Multi-chip pulse tail laser assembly |
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