CN207743230U - A kind of junction of semiconductor device termination extension structure - Google Patents
A kind of junction of semiconductor device termination extension structure Download PDFInfo
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Abstract
The utility model provides a kind of junction of semiconductor device termination extension structure, including：Substrate；In forming epitaxial layer on substrate；Main knot is formed in epitaxial layer, main knot extends to inside from epi-layer surface；And form trapezoid-shaped openings of the shared area from the center of main knot to edge direction in distribution of continuously successively decreasing in the edge of main knot, ion is injected in each trapezoid-shaped openings, and carry out the high temperature anneal, to form the knot terminal expansion structure that doping concentration is continuously successively decreased along main knot center to edge direction, knot terminal expansion structure extends to inside from epi-layer surface, and positioned at the side wall of main knot.The utility model makes the ratio for accounting for termination extension region area from main knot center to the doped region of edge direction be distributed in continuous linear decrease, to ensure to realize the variety lateral doping that concentration continuity reduces, and then reduce main knot termination environment maximum field strength, the breakdown reverse voltage for optimizing semiconductor devices, improves the performance of semiconductor devices.
Description
Technical field
The utility model is related to semiconductor chip fabrication process technical fields, more particularly to a kind of junction of semiconductor device end
Hold expansion structure.
Background technology
Knot terminal extension (Junction Termination Extension, referred to as " JTE ") technology earliest by
A.K.Temple et al. proposes that effect is to control the surface field of semiconductor high-voltage device, is generally used for semiconductor high pressure
Power device.Junction terminal extension technology is the p type island region domain for making a circle around main knot and being lightly doped.When main knot is reverse-biased, knot
Termination extension region can be depleted simultaneously.It is equivalent to introduce negative electrical charge inside the depletion region of drift region at this time, these are negative
Charge extends depletion region, and itself can also absorb a part of electric field, to reduce the electric field spike of main knot edge, in turn
Improve the breakdown characteristics of device.
Earliest JTE is that laterally varying doping (Variation of Lateral Doping, referred to as " VLD ") will be whole
Petiolarea is divided into multi-region, and higher concentration is kept close to the areas main Jie JTE, and to weaken main knot electric field, most outskirt keeps lower dense
Degree, to reduce the electric field strength of itself.
Fig. 1 show the vertical view for the semiconductor devices that one uses junction terminal extension technology, including：High-voltage power device
The main knot 11 of part, internal includes a large amount of structure cells；Knot terminal expansion structure 12 uses the area of junction terminal extension technology
Domain；And the cut-off ring structure 13 of high voltage power device.Knot 11 plus the AA ' of unijunction termination extension structure 12 are to cutting based on shown in Fig. 2
Face figure and its electric field intensity map, from figure 2 it can be seen that in the case where main knot 11 and N- extensions 14 are subject to backward voltage, 11 edge of main knot
The maximum of electric field strength E (x) be worth to and be effectively reduced, improve the pressure voltage of main knot terminal；Expand in the knot terminal
The boundary of structure 12 is opened up, electric field strength E (x) has peak E 0, and is reduced in the depletion layer boundaries 131 of the cut-off ring structure 13
Zero.Fig. 3 illustrates the AA ' of main knot 11 plus three region knot terminal expansion structures 12 to sectional view and its electric field intensity map, wherein Q (x) tables
Show Doped ions quantity, the Doped ions quantity in 121 region of the first knot terminal expansion structure is Q1+Q2+Q3, and the second knot terminal expands
The Doped ions quantity for opening up 122 region of structure is Q2+Q3, and the Doped ions quantity in 123 region of third knot terminal expansion structure is
Q3；It can be seen from the figure that in the maximum value knot main compared with Fig. 2 plus unijunction termination extension of the electric field strength E (x) of 11 edge of main knot
Structure further decreases, and further improves the pressure voltage of main knot terminal；But simultaneously we it also seen that, the first knot terminal expand
The boundary that structure 121, the second knot terminal expansion structure 122, third knot terminal expansion structure 123 are mutated is opened up, in main knot 11 and N-
Extension 14 is subject under backward voltage, and electric field strength E (x) still has peak value, and such as E1, E2, E3 in figure, but peak value is less than the E0 in Fig. 2.
From process complexity and cost viewpoint, existing technology is for realizing knot terminal extension, no longer by repeatedly adulterating,
But primary doping is utilized, doped region is mainly realized by windowing by different proportion by mask plate and is blocked.Method one is such as schemed
Shown in 4, it is whole that multiple knots for being spaced apart and being parallel to 11 edge of main knot are formed on the peripheral knot terminal expansion area of main knot 11
The interval of end extension doped region 12 ', each knot terminal extension doped region 12 ' is equal, and its width along main knot center to edge direction
It is sequentially reduced.Method two, as shown in figure 5, formed on the peripheral knot terminal expansion area of main knot 11 it is multiple be spaced apart and perpendicular to
The knot terminal at 11 edge of main knot extends doped region 12 ', and the equal, length in interval of each knot terminal extension doped region 12 ' differs,
And the area of doped region is sequentially reduced along main knot center to edge direction.It is illustrated in figure 6 the semiconductor of prior art preparation
Device AA ' is to sectional view, including substrate 15, the N- extensions 14 being located on substrate 15, the main knot being formed in the N- extensions 14
11 and knot terminal expansion structure 12, due to accounting for termination extension region area to the doped region of edge direction along main knot center
Ratio not in accordance with continuously linear reduces, but show reduces stepsly, after ion redistribution, is equivalent to P1 and arrives
The knot terminal expansion structure of the multizone doping of Pn, implantation concentration ratio are in steps reduction as also shown in Figure 7.
It has been observed that the electric field strength E (x) of knot terminal expansion area still has peak value, therefore how to advanced optimize knot terminal expansion
The breakdown reverse voltage of structure 12 is opened up, device performance is improved and has become one of those skilled in the art's urgent problem to be solved.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of junction of semiconductor device ends
Expansion structure is held, for solving the problems, such as that main knot termination environment maximum field strength is high in the prior art.
In order to achieve the above objects and other related objects, the utility model provides a kind of junction of semiconductor device termination extension knot
Structure, the junction of semiconductor device termination extension structure include at least：
Substrate；
Epitaxial layer on the substrate；
The main knot inside the epitaxial layer is extended to from the epi-layer surface；And
The knot terminal expansion structure that doping concentration is continuously successively decreased along the main knot center to edge direction, the knot terminal expand
Exhibition structure is extended to from the epi-layer surface inside the epitaxial layer, and positioned at the side wall of the main knot；
Wherein, the substrate and the epitaxial layer have the first conduction type, the main knot and knot terminal extension knot
Structure has the second conduction type.
Preferably, the main junction depth is more than the depth of the knot terminal expansion structure.
Preferably, first conduction type adulterates for p-type, and second conduction type is n-type doping.
Preferably, first conduction type is n-type doping, and second conduction type adulterates for p-type.
Preferably, the doping concentration of the substrate is more than the doping concentration of the epitaxial layer, the doping concentration of the main knot
More than the doping concentration of the knot terminal expansion structure.
Preferably, the knot terminal expansion structure is surrounded on the edge of the main knot.
Preferably, the area shared by the doping figure of the knot terminal expansion structure is from the center of the main knot to edge side
To in continuous distribution of successively decreasing.
Preferably, the doping figure is several trapezoid-shaped openings for being uniformly distributed in the main knot edge, each trapezoidal
The sides aligned parallel of two parallel edges and the main knot of opening, and be more than far from described close to the length of the parallel edges of the main knot
The length of the parallel edges of main knot.
Preferably, the doping concentration of the knot terminal expansion structure is passed along the main knot center to edge direction continuously linear
Subtract.
It is highly preferred that the doping concentration of the knot terminal expansion structure meets following relationship：
Wherein, D ' is away from the doping concentration at the main knot Edge Distance h ', and a is the trapezoid-shaped openings close to the main knot
Parallel edges length, b be parallel edges of the trapezoid-shaped openings far from the main knot length, c be adjacent two trapezoid-shaped openings exist
The spacing at the main knot edge, h are the height of the trapezoid-shaped openings, and h ' is the distance away from the main knot edge, and D is that injection is adulterated
Concentration.
As described above, the junction of semiconductor device termination extension structure of the utility model, has the advantages that：
The junction of semiconductor device termination extension structure of the utility model makes the doped region from main knot center to edge direction
The ratio that domain accounts for termination extension region area is distributed in continuous linear decrease, to ensure to realize the cross that concentration continuity reduces
To varying doping, and then main knot termination environment maximum field strength is reduced, optimize the breakdown reverse voltage of semiconductor devices, raising is partly led
The performance of body device.
Description of the drawings
Fig. 1 is shown as using the schematic top plan view of the semiconductor devices of junction terminal extension technology in the prior art.
Fig. 2 is shown as the AA ' of main knot in the prior art plus unijunction termination extension structure to sectional view and its electric field intensity map.
Fig. 3 is shown as the AA ' of main knot plus three region knot terminal expansion structures in the prior art to sectional view and its electric field
Figure.
Fig. 4 is shown as the method that a kind of doping in the prior art forms knot terminal expansion structure.
Fig. 5 is shown as the method that another doping in the prior art forms knot terminal expansion structure.
Fig. 6 is shown as the AA ' of the semiconductor devices prepared in the prior art to sectional view.
Fig. 7 is shown as the implantation concentration ratio schematic diagram of knot terminal expansion structure in the prior art.
The preparation method that Fig. 8 is shown as the junction of semiconductor device termination extension structure of the utility model forms substrate, extension
The schematic cross-section of layer and main knot.
The preparation method that Fig. 9 is shown as the junction of semiconductor device termination extension structure of the utility model forms the second mask
Schematic cross-section.
The preparation method that Figure 10 is shown as the junction of semiconductor device termination extension structure of the utility model forms the second mask
Schematic top plan view.
Figure 11 is shown as the preparation method of the junction of semiconductor device termination extension structure of the utility model in main knot straight line
Edge forms the partly enlarged top view of trapezoid-shaped openings.
Figure 12 is shown as the preparation method of the junction of semiconductor device termination extension structure of the utility model in main knot round edge
Edge forms the partly enlarged top view of trapezoid-shaped openings.
The preparation method that Figure 13 is shown as the junction of semiconductor device termination extension structure of the utility model forms trapezoidal doping
The vertical view in region.
The preparation method that Figure 14 is shown as the junction of semiconductor device termination extension structure of the utility model forms knot terminal expansion
Open up the partly enlarged top view of structure.
The preparation method that Figure 15 is shown as the junction of semiconductor device termination extension structure of the utility model forms knot terminal expansion
Open up the close-up sectional view of structure.
Figure 16 is shown as the implantation concentration ratio schematic diagram of the junction of semiconductor device termination extension structure of the utility model.
Figure 17 is shown as identical in doping concentration D, main knot plus unijunction termination extension structure, main knot plus three regions
Junction of semiconductor device termination extension structure breakdown reverse voltage V1, V2, V3's of knot terminal expansion structure and the utility model is imitative
True contrast schematic diagram.
Component label instructions
11 main knots
12 ' knot terminals extend doped region
12 knot terminal expansion structures
121 first knot terminal expansion structures
122 second knot terminal expansion structures
123 third knot terminal expansion structures
13 cut-off ring structures
131 depletion layer boundaries
14 N- extensions
15 substrates
21 substrates
22 epitaxial layers
23 main knots
24 second masks
241 trapezoid-shaped openings
251 trapezoidal doped regions
25 knot terminal expansion structures
26 depletion layers
S1~S3 steps
Specific implementation mode
Illustrate that the embodiment of the utility model, those skilled in the art can be by this theorys below by way of specific specific example
Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition
Different specific implementation modes are embodied or practiced, and the various details in this specification can also be based on different viewpoints and answer
With carrying out various modifications or alterations under the spirit without departing from the utility model.
Please refer to Fig. 8~Figure 17.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of utility model, when only display is with related component in the utility model rather than according to actual implementation in schema then
Component count, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can be a kind of random change
Become, and its assembly layout kenel may also be increasingly complex.
As shown in figure 8, the utility model provides a kind of preparation method of junction of semiconductor device termination extension structure, including：
Step S1：One substrate 21 is provided, in forming epitaxial layer 22 on the substrate, forms main knot in the epitaxial layer 22
23。
Specifically, as shown in figure 8, a kind of realization method as the utility model, provides a N-type substrate, in the N-type
Epitaxial growth N-type epitaxy layer on substrate, the doping concentration of the N-type substrate are more than the doping concentration of the N-type epitaxy layer.In institute
The surface for stating N-type epitaxy layer forms the first mask, by the first mask described in photolithography patterning to reveal in the main knot position of setting
Go out the N-type epitaxy layer, p-type doping is carried out to the N-type epitaxy layer using ion implanting, to form main knot 23, described in removal
First mask.
Specifically, as shown in figure 8, a kind of realization method as the utility model, provides a P type substrate, in the p-type
Epitaxial growth p-type epitaxial layer on substrate, the doping concentration of the P type substrate are more than the doping concentration of the p-type epitaxial layer.In institute
The surface for stating p-type epitaxial layer forms the first mask, by the first mask described in photolithography patterning to reveal in the main knot position of setting
Go out the p-type epitaxial layer, n-type doping is carried out to the p-type epitaxial layer using ion implanting, to form main knot 23, described in removal
First mask.
Step S2：Doping figure is formed in the edge of the main knot 23, the area shared by the doping figure is from the master
The center of knot 23 is to edge direction in continuous distribution of successively decreasing.
Specifically, as shown in figure 9, forming the second mask 24 in the surface of the epitaxial layer 22 and the main knot 23, pass through
Second mask 24 described in photolithography patterning is to form the doping figure.As shown in Figure 10~Figure 12, the doping figure is equal
The even several trapezoid-shaped openings 241 for being distributed in 23 edge of main knot, the shape of the trapezoid-shaped openings 241 include but not limited to
Trapezoidal, in the present embodiment, the trapezoid-shaped openings 241 are isosceles trapezoid, and in practical applications, arbitrary shared area is from described
The center of main knot 23 is suitable for the utility model to edge direction in the structure for distribution of continuously successively decreasing, and is not with the present embodiment
Limit.As shown in figure 11, two parallel edges of the trapezoid-shaped openings 241 are parallel with the corresponding edge of the main knot 23, and close to institute
The length for stating the parallel edges of main knot 23 is more than the length of the parallel edges far from the main knot 23；Between between each trapezoid-shaped openings 241
Away from equal.As shown in figure 12, in the present embodiment, the main knot 23 is regular quadrangle, and four angles of the quadrangle are fillet,
The trapezoid-shaped openings 241 at fillet are uniformly distributed along the edge of fillet, and two parallel edges of each trapezoid-shaped openings 241 with it is corresponding
The tangent line of fillet part is parallel.
Step S3：Ion is injected in each trapezoid-shaped openings 241, and carries out the high temperature anneal, is surrounded on formation described
The ring junction termination extension structure 25 of 23 surrounding of main knot, the doping concentration of the knot terminal expansion structure 25 is along the main knot 23
The heart continuously successively decreases to edge direction.
Specifically, as shown in figure 13, as a kind of embodiment of the utility model, using setting dosage D to the N-type
Epitaxial layer carries out p-type ion implanting, to form multiple trapezoidal doped regions 251, the doping concentration of the trapezoidal doped region 251
Less than the doping concentration of the main knot 23, second mask is removed.
Specifically, as shown in figure 13, as the another embodiment of the utility model, using setting dosage D to the P
Type epitaxial layer carries out N-type ion implanting, and to form multiple trapezoidal doped regions 251, the doping of the trapezoidal doped region 251 is dense
Degree removes second mask less than the doping concentration of the main knot 23.
Specifically, as shown in figure 14, the high temperature anneal is then carried out, foreign ion redistribution is realized, so that the ladder
Ion horizontal proliferation in shape doped region 251, and the region after diffusion is mutually coherent, is equivalent to different doping concentrations, it is real
The effect of existing variety lateral doping, and then form the knot terminal expansion structure 25 around 23 edge of main knot.Such as Figure 14
Shown in~Figure 15, the doping concentration of the knot terminal expansion structure 25 is passed along 23 center of main knot to edge direction continuously linear
Subtract, and doping depth is less than the depth of the main knot 23.As shown in figure 16, in the present embodiment, the knot terminal expansion structure
25 doping concentration is successively decreased along 23 center of main knot to edge direction continuously linear.
Doped region ensures coherent premise after ensureing doping descriptive geometry design rule and high annealing horizontal proliferation
Under, it, can by adjusting spacing and trapezoidal height between the bottom edge length of trapezoid-shaped openings, top margin length, adjacent trapezoidal bottom edge
With realize various concentration than doping concentration distribution curve.It is the trapezoid-shaped openings 241 close to the parallel of the main knot 23 to set a
The length on side, b are the length of parallel edges of the trapezoid-shaped openings 241 far from the main knot 23, and c is adjacent two trapezoid-shaped openings 241
Spacing at 23 edge of main knot, h are the height of the trapezoid-shaped openings 241, and wherein a, b, c, h all need to meet manufacturing process
The width of lower minimum lithographic precision, a+c-b need to ensure diffusion junctions connection after high annealing horizontal proliferation；The then knot terminal extension
The equivalent doping concentration D ' of structure 25 meets following relationship：
As shown in Figure 14~Figure 15, the junction of semiconductor device termination extension structure of the utility model includes：
Substrate 21, epitaxial layer 22, main knot 23 and knot terminal expansion structure 24.
As shown in figure 15, the substrate 21 is P type substrate or N-type substrate.
As shown in figure 15, the epitaxial layer 22 is located on the substrate 21, the doping type of the epitaxial layer 22 with it is described
Substrate is consistent, and the doping concentration of the epitaxial layer 22 is less than the doping concentration of the substrate 21.
As shown in figure 15, the main knot 23 is extended to from 22 surface of the epitaxial layer inside the epitaxial layer 22, pass through to
Doped ions are formed in the epitaxial layer 22.As shown in Figure 10, in the present embodiment, the main knot 23 is having for the smooth of the edge
The quadrangle of fillet, in practical applications, the shape of the horizontal cross-section of the main knot 23 are unlimited.
As shown in Figure 14~Figure 15, the knot terminal expansion structure 25 extends to the extension from 22 surface of the epitaxial layer
Inside layer 22, and it is surrounded on the side wall of the main knot 23.
Specifically, the doping type of the knot terminal expansion structure 25 is consistent with the doping type of the main knot 23, described
The depth of knot terminal expansion structure 25 is less than the depth of the main knot 23.The doping concentration of the knot terminal expansion structure 25 is less than
The doping concentration of the main knot 23, and the doping concentration of the knot terminal expansion structure 25 along 23 center of main knot to edge side
To continuously successively decreasing, in the present embodiment, the doping concentration of the knot terminal expansion structure 25 is along 23 center of main knot to edge
Direction continuously linear is successively decreased.
As shown in figure 15, the main knot 23 and 25 lower section of the knot terminal expansion structure are provided with depletion layer 26.
As shown in figure 17 to be identical in doping concentration D, main knot plus unijunction termination extension structure, 3rd areas main Jie Jia
Junction of semiconductor device termination extension structure breakdown reverse voltage V1, V2, V3's of domain knot terminal expansion structure and the utility model
Simulation comparison schematic diagram, it is seen that V1<V2<V3, the junction of semiconductor device termination extension structure of the utility model can obtain compared to
The higher breakdown reverse voltage of the prior art, so that in the case of equal area, higher voltage endurance capability is obtained, to improve
The reliability of semiconductor devices reduces the cost of semiconductor devices.
In conclusion the utility model provides a kind of junction of semiconductor device termination extension structure, including：Substrate；Positioned at institute
State the epitaxial layer on substrate；The main knot inside the epitaxial layer is extended to from the epi-layer surface；And doping concentration is along institute
State the knot terminal expansion structure that main knot center is continuously successively decreased to edge direction, the knot terminal expansion structure is from the epitaxial layer table
Face extends to inside the epitaxial layer, and positioned at the side wall of the main knot；Wherein, the substrate and the epitaxial layer have first
Conduction type, the main knot and the knot terminal expansion structure have the second conduction type.A substrate is provided, on the substrate
Epitaxial layer is formed, forms main knot in the epitaxial layer；Doping figure, doping figure institute are formed in the edge of the main knot
The area accounted for is from the center of the main knot to edge direction in continuous distribution of successively decreasing；Ion is injected in each trapezoid-shaped openings, is gone forward side by side
Row the high temperature anneal, to form the ring junction termination extension structure for being surrounded on the main knot surrounding, the knot terminal extension knot
The doping concentration of structure is continuously successively decreased along the main knot center to edge direction.The junction of semiconductor device termination extension of the utility model
Structure so that it is in continuously linearly to pass that the ratio of termination extension region area is accounted for from main knot center to the doped region of edge direction
Deduction cloth to ensure to realize the variety lateral doping that concentration continuity reduces, and then reduces main knot termination environment maximum field strength,
The breakdown reverse voltage for optimizing semiconductor devices, improves the performance of semiconductor devices.So the utility model effectively overcomes now
There is the various shortcoming in technology and has high industrial utilization.
The above embodiments are only illustrative of the principle and efficacy of the utility model, new not for this practicality is limited
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications completed under refreshing and technological thought or change, should be covered by the claim of the utility model.
Claims (10)
1. a kind of junction of semiconductor device termination extension structure, which is characterized in that the junction of semiconductor device termination extension structure is extremely
Include less：
Substrate；
Epitaxial layer on the substrate；
The main knot inside the epitaxial layer is extended to from the epi-layer surface；And
The knot terminal expansion structure that doping concentration is continuously successively decreased along the main knot center to edge direction, the knot terminal extension knot
Structure is extended to from the epi-layer surface inside the epitaxial layer, and positioned at the side wall of the main knot；
Wherein, the substrate and the epitaxial layer have the first conduction type, the main knot and knot terminal expansion structure tool
There is the second conduction type.
2. junction of semiconductor device termination extension structure according to claim 1, it is characterised in that：The main junction depth is more than
The depth of the knot terminal expansion structure.
3. junction of semiconductor device termination extension structure according to claim 1, it is characterised in that：First conduction type
It is adulterated for p-type, second conduction type is n-type doping.
4. junction of semiconductor device termination extension structure according to claim 1, it is characterised in that：First conduction type
For n-type doping, second conduction type adulterates for p-type.
5. junction of semiconductor device termination extension structure according to claim 3 or 4, it is characterised in that：The substrate is mixed
Miscellaneous concentration is more than the doping concentration of the epitaxial layer, and the doping concentration of the main knot is more than the doping of the knot terminal expansion structure
Concentration.
6. junction of semiconductor device termination extension structure according to claim 1, it is characterised in that：The knot terminal extension knot
Structure is surrounded on the edge of the main knot.
7. junction of semiconductor device termination extension structure according to claim 1, it is characterised in that：The knot terminal extension knot
Area shared by the doping figure of structure is from the center of the main knot to edge direction in continuous distribution of successively decreasing.
8. junction of semiconductor device termination extension structure according to claim 7, it is characterised in that：The doping figure is equal
The even several trapezoid-shaped openings for being distributed in the main knot edge, the edge of two parallel edges and the main knot of each trapezoid-shaped openings
It is parallel, and the length close to the length of the parallel edges of the main knot more than the parallel edges far from the main knot.
9. junction of semiconductor device termination extension structure according to claim 8, it is characterised in that：The knot terminal extension knot
The doping concentration of structure is successively decreased along the main knot center to edge direction continuously linear.
10. junction of semiconductor device termination extension structure according to claim 9, it is characterised in that：The knot terminal extension
The doping concentration of structure meets following relationship：
Wherein, D ' is away from the doping concentration at the main knot Edge Distance h ', and a is the trapezoid-shaped openings close to the flat of the main knot
The length on row side, b are the length of parallel edges of the trapezoid-shaped openings far from the main knot, and c is adjacent two trapezoid-shaped openings described
The spacing at main knot edge, h are the height of the trapezoid-shaped openings, and h ' is the distance away from the main knot edge, and D is that injection doping is dense
Degree.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107994068A (en) * | 2017-12-20 | 2018-05-04 | 上海南麟电子股份有限公司 | A kind of junction of semiconductor device termination extension structure and preparation method |
| CN113658996A (en) * | 2021-08-20 | 2021-11-16 | 电子科技大学 | Transverse variable doping terminal structure and design method thereof |
-
2017
- 2017-12-20 CN CN201721792124.3U patent/CN207743230U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107994068A (en) * | 2017-12-20 | 2018-05-04 | 上海南麟电子股份有限公司 | A kind of junction of semiconductor device termination extension structure and preparation method |
| CN113658996A (en) * | 2021-08-20 | 2021-11-16 | 电子科技大学 | Transverse variable doping terminal structure and design method thereof |
| CN113658996B (en) * | 2021-08-20 | 2023-09-29 | 电子科技大学 | Transverse variable doping terminal structure and design method thereof |
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