CN207727139U - A kind of use in magnetron sputtering coating heating device - Google Patents
A kind of use in magnetron sputtering coating heating device Download PDFInfo
- Publication number
- CN207727139U CN207727139U CN201721780875.3U CN201721780875U CN207727139U CN 207727139 U CN207727139 U CN 207727139U CN 201721780875 U CN201721780875 U CN 201721780875U CN 207727139 U CN207727139 U CN 207727139U
- Authority
- CN
- China
- Prior art keywords
- heat
- sample
- support plate
- magnetron sputtering
- pallet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The utility model discloses a kind of use in magnetron sputtering coating heating devices, heating dish including fixed setting, relative to the heating dish rotation holder and be placed in the holder with the sample clamp of the holder pivots, the holder includes interval setting and relatively-stationary first support plate and the second support plate successively up and down, the heating dish is set between first support plate and second support plate, the position opposite with heating dish is equipped with the first card hole for housing the sample clamp on second support plate, the sample clamp includes the heat-sink shell opposite with the heating dish, pallet below the heat-sink shell, and the heat-conducting layer between the heat-sink shell and the pallet, the pallet is for support sample and sample is made to be exposed to the pallet lower surface away from the surface of the heat-conducting layer to carry out sputter coating.The utility model provides a kind of use in magnetron sputtering coating heating device, to carry out efficient uniform heating to sample substrate in magnetic control sputtering device.
Description
Technical field
The utility model is related to magnetic-controlled sputtering coating equipment technical fields, more specifically, it relates to a kind of magnetron sputtering
Plated film heating device.
Background technology
Magnetron sputtering technique is one kind of physical gas phase deposition technology, has rate of film build high, film base adhesiveness is good, can be real
The advantages that existing large-area coating film.Grow up since the seventies in last century, magnetron sputtering technique develops multiple types, extensively
Applied to fields such as semiconductor microelectronic, optical thin film and material surface processing.Wherein, reactive sputtering is the one of magnetron sputtering
Kind, refer to being passed through the reaction gas such as oxygen, nitrogen in sputtering process to react to deposit with the target atom sputtered out
Obtain compound film.Different from conventional magnetron sputtering, reactive sputtering is chemically reacted due to needing, so it is generally necessary to base
Piece at relatively high temperatures, and substrate temperature on gained chemical composition influence it is very big.
In existing use in magnetron sputtering coating heating device, the heating dish on sample substrate top is by way of non-contact radiation
Directly substrate is heated, leading to heating to sample substrate in this way, the efficiency of heating surface is low, relatively low for heat absorption coefficient not in time
Substrate be extremely difficult to require temperature；And due to there is a certain distance between heating dish and sample, the diffusion of temperature can be caused,
The temperature at sample substrate center is caused to be higher than the temperature of edge, substrate uneven heating is even.These can all hinder reactive sputtering
The progress of middle chemical reaction and the ingredient for influencing compound.Further, since thermocouple is inserted under heating dish in existing apparatus
End measures heating dish temperature and simultaneously feeds back to temperature controller, realizes temperature control, the process due to thermocouple survey be heating dish temperature
Rather than the temperature of substrate, therefore temperature-controlling system temperature control is inaccurate in existing apparatus, what is actually controlled is the temperature of heating dish
Rather than substrate.
Utility model content
In view of the existing technical defect, the utility model provides a kind of use in magnetron sputtering coating heating device, with
Efficient uniform heating is carried out to sample substrate in magnetic control sputtering device.
In order to achieve the above purpose, the utility model uses the following technical solution：
A kind of use in magnetron sputtering coating heating device, including the heating dish of fixed setting, relative to the heating dish rotate
Holder and be placed in sample clamp in the holder with the holder pivots, the holder includes interval setting successively up and down
And relatively-stationary first support plate and the second support plate, the heating dish are set between first support plate and second support plate,
The position opposite with heating dish is equipped with the first card hole for housing the sample clamp, the specimen holder on second support plate
Tool includes the heat-sink shell opposite with the heating dish, the pallet below the heat-sink shell and is set to the heat-sink shell and institute
State the heat-conducting layer between pallet, the pallet is for support sample and so that sample is exposed to away from the surface of the heat-conducting layer described
Pallet lower surface is to carry out sputter coating.
Further, further include being fixedly arranged on the temperature probe for being used to detect sample temperature below second support plate and being used for
The temperature controller that the temperature of the heating dish is controlled according to the testing result of the temperature probe.
Further, the heat-sink shell is made of quartz glass, and/or, the heat-conducting layer is made of graphene.
Further, distance of the top of the temperature probe apart from second support plate lower surface is 20~30cm.
Further, the temperature probe is infrared temperature probe.
Further, the pallet is equipped with the second card hole for support sample, and second card hole includes second logical
Hole and set on second through-hole periphery and be connected to second through-hole one enclose the second groove, second groove with it is described
The second ladder platform is formed between second through-hole with support sample.
Further, the shape with the shape of sample of second groove are consistent and height is equal.
Further, the pallet, heat-conducting layer and heat-sink shell are stacked and are locked by pin.
Further, first support plate and the second support plate are fixedly connected by multiple connecting poles.
Compared with prior art, the heat-sink shell in a kind of use in magnetron sputtering coating heating device provided by the utility model and
Heat-conducting layer can in time, uniformly heat the sample substrate in fixture, improve the efficiency of heating surface, meanwhile, temperature probe is real
When detect substrate surface temperature, and transfer data to temperature controller, temperature controller in real time adjusts the temperature of heating dish
Section, to control the temperature of substrate.
Description of the drawings
Fig. 1 is the structural schematic diagram of the utility model use in magnetron sputtering coating heating device；
Fig. 2 is the structural schematic diagram of holder in the utility model use in magnetron sputtering coating heating device；
Fig. 3 is the configuration schematic diagram of sample clamp in the utility model use in magnetron sputtering coating heating device；
Fig. 4 is the combining structure schematic diagram of sample clamp in the utility model use in magnetron sputtering coating heating device.
Specific implementation mode
In order to make the purpose of the utility model, technical solutions and advantages more clearly understood, below in conjunction with attached drawing and implementation
The utility model is further described in example.It should be appreciated that specific embodiment described herein is only used to explain this reality
With novel, it is not used to limit the utility model.
Referring to Fig. 1, a kind of use in magnetron sputtering coating heating device provided by the utility model, the device is mainly used in magnetic
During controlling the reactive sputtering in sputter coating, in order to obtain the uniform compound film of thin and thick, used in the utility model
Heating dish 2 is fixed, and the mode that the holder 1 equipped with sample clamp 3 rotates carries out, specifically, referring to Fig. 1, the utility model adds
Thermal includes the heating dish 2 of fixed setting, rotate relative to the heating dish 2 holder 1 and be placed in the holder 1 it is interior with
The sample clamp 3 that the holder 1 rotates is fixedly arranged on temperature probe 4 of second support plate, 12 lower section for detecting sample temperature
And the temperature controller 5 for being controlled the temperature of the heating dish 2 according to the testing result of the temperature probe 4.
Specifically, referring to Fig. 1, the holder 1 includes being spaced setting and relatively-stationary first support plate, 11 He successively up and down
Second support plate 12, wherein the first support plate 11 and the second support plate 12 can be any shape, it is preferred that it is the identical circle of size,
In the first support plate 11 and the second support plate 12 be relatively fixed so that the first support plate 11 and the second support plate 12 rotate together and respectively will not
Rotation occurs, it is preferred that the first support plate 11 is fixedly connected with the second support plate 12 by multiple connecting poles 13, and wherein connecting pole 13 is set
There are four, uniform branch is in the edge of the first support plate 11 and the second support plate 12, to ensure that heating dish 2 can be set to first
In the space that plate 11, the second support plate 12 and four connecting poles 13 are formed, wherein the outer wall of the outer wall of connecting pole 13 and heating dish 2 it
Between have spacing, it is ensured that holder 1 in rotation process will not with heating dish 2 occur frictional impact.Wherein in order to enable 1 turn of holder
Dynamic, the upper surface of first support plate 11 can be fixedly connected with a shaft in holder 1, and outside is fixed with driving with shaft by rotating shaft
The holder 1 of connection is rotated.
Wherein, referring to Fig. 2, the second support plate 12 is equipped with the first card hole 121 for housing the sample clamp 3, this
One card hole 121 is for support sample clamp and clamps sample clamp so that and sample clamp can be rotated together with holder 1, to
The lower surface of sample substrate in print fixture 3 is set to obtain the uniform compound film of thin and thick, wherein preferred, first card
Hole 121 is stepped hole, including first through hole 121-2 and by the second support plate 12 upper surface along the periphery first through hole 121-2 one week
The first groove 121-1, the first ladder platform 1211-3 is formed between the second groove 121-1 and the first through hole 121-2
With support sample clamp.It is appreciated that each correspondence of each length of side of the first groove 121-1 more than first through hole 121-2 becomes,
In the second groove 121-1 shape it is identical as the shape of sample clamp 3 and preferred height is also equal so that sample clamp 3 can
Just it is placed in the first groove 121-1 without shaking in the first groove 121-1.
Wherein, referring to Fig. 1, the heating dish 2 is set between first support plate 11 and second support plate 12 and opposite
It is fixed in holder 1, it is preferred that heating dish 2 is in the surface of print fixture 3, to enable to the heat of heating dish 2 timely
It is transferred to sample clamp 3, wherein preferred, heating dish 2 is circle, and the fixation for heating dish 2 can consolidating in above-mentioned holder 1
On the basis of fixed, coaxial through-hole is set in the shaft that the upper surface of the first support plate 11 is fixedly connected, and the through-hole penetrates
First support plate 11, it will be understood that shaft becomes tube-in-tube structure at this time, and a fixing axle is fixedly installed in the upper surface of heating dish 2, should
Fixing axle sequentially passes through the hole on the first support plate 11, the hole in shaft and stretches out shaft, and the portion of external of stretching consolidates it
Fixed, which is to realize the rotation of holder 1, and fixed to heating dish 2 so as to heating dish 2 in rotation process
The sample clamp 3 of underface can be evenly heated.
Specifically, in conjunction with Fig. 3 and Fig. 4, the sample clamp 3 by it is lower and on stack gradually pallet 31, heat-conducting layer 32, inhale
After thermosphere 33, wherein print fixture 3 are placed in the first card hole 121, heat-sink shell 31 and heating dish 2 are opposite, wherein pallet 31 due to
Support sample substrate is needed, therefore, pallet 3 is equipped with the second card hole 311 for support sample, and second card hole 311 is wrapped
Include the second through-hole 311-2 and by the pallet 31 upper surface along the second one week the second groove 311-1 in the periphery through-hole 311-2,
The second ladder platform 311-3 is formed between the second groove 311-1 and the second through-hole 311-2 with support sample, Ke Yili
Solution, each length of side of the second groove 311-1 are more than each corresponding length of side of the second through-hole 311-2, wherein in order to clamp sample substrate,
Ensure that in sample clamp 3, sample substrate is not shaken, the shape and sample substrate of the second groove 311-1 in 1 rotation process of holder
Shape it is identical, while in order to ensure set on 31 upper end of pallet heat-conducting layer 32 can attaching parallel with the upper surface of pallet 31,
The height of second groove 311-1 is equal with the height of sample substrate.Wherein the surrounding of second groove 311-1 is set respectively on pallet 31
Be useful for connection through-hole 34, it is corresponding, on the corresponding position of heat-conducting layer 32 and heat-sink shell 33 respectively be equipped with through-hole 34a and
34b, screw 35, which sequentially passes through one group of 34b, 34a and 34, makes the pallet 31, heat-conducting layer 32, heat-sink shell 33 of stacking lock, so not
It only ensure that the reliable delivery of temperature, while ensureing will not be because of the too fast generation heat-sink shell 33 of rotating speed or heat conduction in rotation process
Layer 32 flies out, while being also convenient for replacing the sample substrate in the second groove 311-1 by the locking of screw 35.Wherein may be used
To understand, after device installation, the bottom surface of the sample substrate in the second groove 311-1 is exposed to the lower surface of pallet 2
, certainly, it is also exposed to the lower surface of second support 12, it only in this way, could be to the following table of the sample substrate in sample clamp 3
Face is to carry out sputter coating.Preferably, in order to further increase the efficiency of heating surface, heat-sink shell 33 is the larger material system of heat absorption coefficient
At, for absorb heating dish 2 radiation heat, make heating dish radiate most of heat absorbed, it is preferred that heat-sink shell 33 by
Quartz glass is made, to significantly improve the efficiency of heating system；Heat-conducting layer 32 is made of the larger material of thermal coefficient, is responsible for
The heat that quartz glass layer absorbs is conducted to sample substrate, so as to ensure that substrate surface is heated evenly, it is preferred that described
Heat-conducting layer 32 is made of graphene.
Specifically, referring to Fig. 1, the temperature probe 4 is fixed on second by external fixation device (not shown)
12 lower section of plate, to ensure that non-contact temperature measuring 4 test scopes of probe are limited to substrate surface, non-contact temperature measuring probe 4 and substrate following table
The distance in face must control in the reasonable scope.Temperature probe 4 measures substrate surface real time temperature by non-contacting mode, and
Temperature controller 5 is fed back to, temperature control controller 5 controls the temperature of heating dish 2, to which the temperature of substrate be adjusted.It is preferred that
, zone of reasonableness is that distance of the top of temperature probe 4 apart from 12 lower surface of the second support plate is 20~30cm, it is preferred that
The temperature probe 4 is infrared temperature probe.Under normal circumstances, temperature probe 4 forms an angle with temperature probe 4, the angle
Mainly avoid the target of lower section magnetron sputtering.
Specifically, referring to Fig. 1, the input terminal of temperature controller 5 is electrically connected with the output end of the temperature probe 4, described
The output end of temperature controller 5 is electrically connected with the input terminal of the heating dish 2, and temperature controller 5 obtains substrate from temperature probe 4
The real time temperature on surface, temperature controller 5 adjusts output current by itself program again, final to realize that substrate surface temperature is stablized
Near set temperature.
The use in magnetron sputtering coating heating device of the present embodiment includes holder 1, heating dish 2, sample clamp 3, infrared measurement of temperature
Probe 4 and temperature controller 5.Wherein, sample clamp 3 is three layers.It is followed successively by sample tray 31, graphene layer 32, quartz glass
Layer 33 is locked by pin between each layer.31 size of pallet is 100 × 100 × 2mm, and centre position is equipped with 50 × 50 × 1mm's
Sample cell, four side of slot bottom, which is equipped with, is reserved with wide 1mm, thickness 1mm for holding sample.Sample clamp 3 upper surface (i.e. heat-sink shell 33
Upper surface) with heating dish distance be 1mm.32 size of graphene layer is 100 × 100 × 2mm.Quartz glass layer size be 100 ×
100×2mm.The threaded hole that upper 4 same position of 3 each layer of sample clamp is designed with a diameter of 4mm is used for screw locking.Infrared survey
Warm probe 4 is 60mm with substrate lower surface distance, with substrate at 30 ° of angles.
Heat-sink shell and heat-conducting layer in a kind of use in magnetron sputtering coating heating device of the utility model can be in fixtures
Sample substrate is timely, is uniformly heated, and the efficiency of heating surface is improved, meanwhile, temperature probe detects substrate surface temperature in real time, and
Transfer data to temperature controller, temperature controller is in real time adjusted the temperature of heating dish, to the temperature of substrate into
Row control.
It the above is only the specific implementation mode of the application, it is noted that those skilled in the art are come
It says, under the premise of not departing from the application principle, several improvements and modifications can also be made, these improvements and modifications also should be regarded as
The protection domain of the application.
Claims (9)
1. a kind of use in magnetron sputtering coating heating device, which is characterized in that heating dish (2) including fixed setting, relative to institute
It states the holder (1) of heating dish (2) rotation and is placed in the sample clamp (3) rotated with the holder (1) in the holder (1),
The holder (1) includes interval setting and relatively-stationary first support plate (11) and the second support plate (12) successively up and down, described to add
Hot plate (2) is set between first support plate (11) and second support plate (12), on second support plate (12) and heating dish
(2) opposite position is equipped with the first card hole (121) for housing the sample clamp (3), the sample clamp (3) include with
The opposite heat-sink shell (33) of the heating dish (2), be set to the heat-sink shell (33) below pallet (31) and be set to the heat absorption
Heat-conducting layer (32) between layer (33) and the pallet (31), the pallet (31) is for support sample and makes sample away from described
The surface of heat-conducting layer (32) is exposed to the pallet (31) lower surface to carry out sputter coating.
2. use in magnetron sputtering coating heating device according to claim 1, it is characterised in that：Further include being fixedly arranged on described
It is used to detect the temperature probe (4) of sample temperature below two support plates (12) and for the detection knot according to the temperature probe (4)
The temperature controller (5) that fruit controls the temperature of the heating dish (2).
3. use in magnetron sputtering coating heating device according to claim 2, it is characterised in that：The heat-sink shell (33) is by stone
English glass is made, and/or, the heat-conducting layer (32) is made of graphene.
4. use in magnetron sputtering coating heating device according to claim 3, it is characterised in that：The temperature probe (4)
Distance of the top apart from the second support plate (12) lower surface is 20~30cm.
5. use in magnetron sputtering coating heating device according to claim 4, it is characterised in that：The temperature probe (4) is
Infrared temperature probe.
6. according to the use in magnetron sputtering coating heating device described in claim 1-5 any one, it is characterised in that：The pallet
(31) be equipped with for support sample the second card hole (311), second card hole (311) include the second through-hole (311-2) and
Set on second through-hole (311-2) periphery and be connected to second through-hole (311-2) one enclose the second groove (311-1),
The second ladder platform (311-3) is formed between second groove (311-1) and second through-hole (311-2) with support sample.
7. use in magnetron sputtering coating heating device according to claim 6, it is characterised in that：Second groove (the 311-
1) shape is consistent with the shape of sample and height is equal.
8. use in magnetron sputtering coating heating device according to claim 7, it is characterised in that：The pallet (31), heat conduction
Layer (32) and heat-sink shell (33) are stacked and are locked by pin (35).
9. use in magnetron sputtering coating heating device according to claim 8, it is characterised in that：First support plate (11) and
Second support plate (12) is fixedly connected by multiple connecting poles (13).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721780875.3U CN207727139U (en) | 2017-12-19 | 2017-12-19 | A kind of use in magnetron sputtering coating heating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721780875.3U CN207727139U (en) | 2017-12-19 | 2017-12-19 | A kind of use in magnetron sputtering coating heating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207727139U true CN207727139U (en) | 2018-08-14 |
Family
ID=63097607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721780875.3U Active CN207727139U (en) | 2017-12-19 | 2017-12-19 | A kind of use in magnetron sputtering coating heating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207727139U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117966116A (en) * | 2024-03-28 | 2024-05-03 | 合肥致真精密设备有限公司 | Super vacuum deposition equipment for preparing magnetic film and application method thereof |
-
2017
- 2017-12-19 CN CN201721780875.3U patent/CN207727139U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117966116A (en) * | 2024-03-28 | 2024-05-03 | 合肥致真精密设备有限公司 | Super vacuum deposition equipment for preparing magnetic film and application method thereof |
| CN117966116B (en) * | 2024-03-28 | 2024-08-16 | 合肥致真精密设备有限公司 | Super vacuum deposition equipment for preparing magnetic film and application method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| RU2550464C2 (en) | Device and method for substrate fast heating and cooling and application of coating thereon in vacuum | |
| TW465000B (en) | Semiconductor workpiece processing apparatus and method | |
| TW574396B (en) | Method and apparatus for coating a substrate in a vacuum | |
| CN207727139U (en) | A kind of use in magnetron sputtering coating heating device | |
| CN105018881A (en) | Amorphous vanadium oxide film material containing V6O13 crystals and preparing method thereof | |
| US20030036090A1 (en) | Heat-relaxable substrates and arrays | |
| JP2011149100A (en) | Cooling system | |
| CN113130764B (en) | Zero-bias high-sensitivity perovskite single crystal X-ray detector and preparation method thereof | |
| CN109651812A (en) | The siliceous Kapton of resistance to elemental oxygen composition and preparation method thereof | |
| Dörling et al. | A setup to measure the Seebeck coefficient and electrical conductivity of anisotropic thin-films on a single sample | |
| CN103048832B (en) | Method and device for coating polyimide solution | |
| Meng et al. | Humidity‐Insensitive, Large‐Area‐Applicable, Hot‐Air‐Assisted Ambient Fabrication of 2D Perovskite Solar Cells | |
| Sun et al. | Dense Stacking of Millimeter‐Sized Perovskite Single Crystals for Sensitive and Low‐Bias Hard X‐Ray Detection | |
| CN206706202U (en) | A kind of crystal oscillator probe uses crystal oscillator box | |
| CN103235003B (en) | Vacuum thermal insulation board heat conductivity coefficient detection device | |
| Nehm et al. | Influence of aging climate and cathode adhesion on organic solar cell stability | |
| CN107475681B (en) | Method for uniformly controlling temperature of large-area flexible substrate | |
| TW200404334A (en) | Method and apparatus for measuring wafer voltage or temperature | |
| CN208173554U (en) | Heater and substrate board treatment | |
| JP2013209698A (en) | Vapor deposition device | |
| CN105908133B (en) | One kind steaming equipment altogether | |
| Vijayakumar et al. | In situ high temperature electrical characterization of RF sputtered SiCBN thin films | |
| Corpus-Mendoza et al. | Impact of magnetic fields on the morphology of hybrid perovskite films for solar cells | |
| CN218726805U (en) | Heating plate structure for testing photoetching film | |
| WO2018153151A1 (en) | Transfer platform, attaching device, and attaching method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |