CN207706198U - POE rectifier circuits based on MOS power tubes - Google Patents
POE rectifier circuits based on MOS power tubes Download PDFInfo
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- CN207706198U CN207706198U CN201820137186.9U CN201820137186U CN207706198U CN 207706198 U CN207706198 U CN 207706198U CN 201820137186 U CN201820137186 U CN 201820137186U CN 207706198 U CN207706198 U CN 207706198U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The utility model provides a kind of POE rectifier circuits based on MOS power tubes, including the first MOS power tubes, the 2nd MOS power tubes, the 3rd MOS power tubes, the 4th MOS power tubes, first resistor, second resistance, 3rd resistor and the 4th resistance.The utility model builds full-bridge synchronous rectifier by MOSFET, not only adapt to opposed polarity input, since the conduction impedance of MOSFET is small, the power attenuation of rectifier bridge can also be effectively reduced, the power supply conversion efficiency for improving POE equipment, also reduces cooling requirements, and circuit is simple, it is few to occupy PCB space, is conducive to miniaturization of electronic products.
Description
Technical field
The utility model is related to power technique fields, more particularly to a kind of POE rectifier circuits based on MOS power tubes.
Background technology
Power over Ethernet (Power Over Ethernet, abbreviation POE) technology increased popularity and maturation, on the one hand, in view of
Five class cables of standard have four pairs of twisted-pair feeders, IEEE80 2.3af (first POE supply standards) to allow PSE (Power
Sourcing Equipment, end equipment of powering) it is supplied using two kinds of line sequences between PD (Power Device, receiving end equipment)
Electricity:One is application dead pairs to power, and power delivery is just online on 4,5 and line pair 7,8, and line pair 4,5 is anode, line pair
7,8 be cathode;Another kind is to apply data line to power supply, and power supply is just applied to the midpoint of transmission transformer, to not influence number
According to transmission, at this moment line pair 1,2 and line pair 3,6 can be arbitrary polarity, i.e., line pair 1,2 be positive and line pair 3,6 be cathode or
Person's line pair 1,2 is cathode and line pair 3,6 is anode, and POE equipment is required to can adapt to arbitrary polarity input at this time.On the other hand,
The input stage of traditional POE equipment generally uses diode full-bridge rectifier, since the rectifier diode of conventional bridge rectifier is deposited
In the voltage drop of about 1V, when system power is larger, the revised edition IEEE 802.3bt drafts in especially currently working out
Standard 2.0 will provide up to 71W power for PD, this rectifier bridge will consume large energy, also need to carry out additionally the rectifier bridge
Radiating treatment.
Utility model content
The technical problems to be solved in the utility model is to overcome prior art POE equipment to be needed using diode rectifier bridge
Consumption large energy and the defect for needing extra heat dissipation to handle, provide a kind of POE rectifier circuits based on MOS power tubes, should
Rectifier circuit utilizes the low conduction impedance of MOS power tubes, forms bridge circuit realization low-loss by metal-oxide-semiconductor, can adapt to automatically
The rectification circuit of opposed polarity input.
The utility model is to solve above-mentioned technical problem by following technical proposals:
The utility model provides a kind of POE rectifier circuits based on MOS power tubes, its main feature is that, including the first MOS work(
Rate pipe, the 2nd MOS power tubes, the 3rd MOS power tubes, the 4th MOS power tubes, first resistor, second resistance, 3rd resistor and
Four resistance;
The drain electrode of the first MOS power tubes is used as the POE rectifications after being connect with the drain electrode of the 3rd MOS power tubes
The first input end of bridge circuit, conduct after the drain electrodes of the 2nd MOS power tubes is connect with the drain electrode of the 4th MOS power tubes
Second input terminal of the POE rectifier circuits;
The source electrode of the first MOS power tubes is used as the POE rectifications after being connect with the source electrode of the 2nd MOS power tubes
The positive output end of bridge circuit, the source electrodes of the 3rd MOS power tubes are used as institute after being connect with the source electrode of the 4th MOS power tubes
State the negative output terminal of POE rectifier circuits;
The grid of the first MOS power tubes passes through institute by the grid of the first resistor, the 3rd MOS power tubes
State the drain electrode that 3rd resistor is connected to the 2nd MOS power tubes;The grid of the 2nd MOS power tubes passes through second electricity
It hinders, the grid of the 4th MOS power tubes is connected to the drain electrode of the first MOS power tubes by the 4th resistance;
The first MOS power tubes and the 2nd MOS power tubes are PMOS power tubes, the 3rd MOS power tubes
It is NMOS power tubes with the 4th MOS power tubes;
The first input end and the second input terminal of the POE rectifier circuits constitute the power supply of the POE rectifier circuits
First group of line pair of input.
Preferably, the POE rectifier circuits further include the first zener diode, the second zener diode, third voltage stabilizing
Diode and the 4th zener diode, the cathode of first zener diode connect with the source electrode of the first MOS power tubes,
Anode is connect with the grid of the first MOS power tubes, the cathode of second zener diode and the 2nd MOS power tubes
Source electrode connection, anode connect with the grid of the 2nd MOS power tubes, the anode of the third zener diode and described the
The source electrode connection of three MOS power tubes, cathode are connect with the grid of the 3rd MOS power tubes, the 4th zener diode
Anode is connect with the source electrode of the 4th MOS power tubes, cathode is connect with the grid of the 4th MOS power tubes.
Preferably, the POE rectifier circuits further include the first protection circuit, second protection circuit, third protection circuit,
4th protection circuit, the first capacitor, the second capacitor, third capacitor and the 4th capacitor;
The first protection circuit includes the 5th zener diode, first switch diode and the first triode;
The second protection circuit includes the 6th zener diode, second switch diode and the second triode;
The third protection circuit includes the 7th zener diode, third switching diode and third transistor;
The 4th protection circuit includes the 8th zener diode, the 4th switching diode and the 4th triode;
The grid of the first MOS power tubes passes through institute by the grid of the first resistor, the 2nd MOS power tubes
State the positive output end that second resistance is connected to the POE rectifier circuits;The grid of the 3rd MOS power tubes passes through described
Three resistance, the 4th MOS power tubes grid the negative output of the POE rectifier circuits is connected to by the 4th resistance
End;
First capacitor is in parallel with the first resistor, and second capacitor is in parallel with the second resistance, institute
It is in parallel with the 3rd resistor to state third capacitor, the 4th capacitor and the 4th resistor coupled in parallel;
The cathode of 5th zener diode connect with the drain electrode of the first MOS power tubes, anode and described first
The anode of switching diode connects, and the cathode of the first switch diode is connect with the base stage of first triode, described
The collector of first triode is connect with the grid of the first MOS power tubes;
The cathode of 6th zener diode connect with the drain electrode of the 2nd MOS power tubes, anode and described second
The anode of switching diode connects, and the cathode of the second switch diode is connect with the base stage of second triode, described
The collector of second triode is connect with the grid of the 2nd MOS power tubes;
The anode of 7th zener diode connect with the drain electrode of the 3rd MOS power tubes, cathode and the third
The cathode of switching diode connects, and the anode of the third switching diode is connect with the base stage of the third transistor, described
The collector of third transistor is connect with the grid of the 3rd MOS power tubes;
The anode of 8th zener diode connect with the drain electrode of the 4th MOS power tubes, cathode and the described 4th
The cathode of switching diode connects, and the anode of the 4th switching diode is connect with the base stage of the 4th triode, described
The collector of 4th triode is connect with the grid of the 4th MOS power tubes;
The emitter of first triode is connect with the emitter of second triode, the hair of the third transistor
Emitter-base bandgap grading is connect with the emitter of the 4th triode;
First triode and second triode are NPN triode, the third transistor and the described 4th
Triode is PNP triode.
Preferably, the first protection circuit further includes the 5th resistance and the 5th capacitor, the 5th capacitor and institute
The 5th resistance is stated to be parallel between the base stage and emitter of first triode;
The second protection circuit further includes the 6th resistance and the 6th capacitor, the 6th capacitor and the 6th electricity
Resistance is parallel between the base stage and emitter of second triode;
Third protection circuit further includes the 7th resistance and the 7th capacitor, the 7th capacitor and the 7th electricity
Resistance is parallel between the base stage and emitter of the third transistor;
The 4th protection circuit further includes the 8th resistance and the 8th capacitor, the 8th capacitor and the 8th electricity
Resistance is parallel between the base stage and emitter of the 4th triode.
Preferably, the first protection circuit further includes the 9th zener diode, the second protection circuit further includes the
Ten zener diodes, third protection circuit further includes the 11st zener diode, and the 4th protection circuit further includes the
12 zener diodes;
The anode of 9th zener diode is connect with the anode of the 5th zener diode, the 9th voltage stabilizing two
The cathode of pole pipe is connect with the cathode of the 5th zener diode;
The anode of the anode and the 6th zener diode of tenth zener diode, the tenth zener diode
Cathode connected respectively with the cathode of the 6th zener diode;
The anode of 11st zener diode is connect with the anode of the 7th zener diode, and the described 11st is steady
The cathode of pressure diode is connect with the cathode of the 7th zener diode;
The anode of 12nd zener diode is connect with the anode of the 8th zener diode, and the described 12nd is steady
The cathode of pressure diode is connect with the cathode of the 8th zener diode.
Preferably, the POE rectifier circuits further include the 5th MOS power tubes, the 6th MOS power tubes, the 7th MOS power
Pipe, the 8th MOS power tubes, the 5th protection circuit, the 6th protection circuit, the 7th protection circuit, the 8th protection circuit, the 9th capacitance
Device, the tenth capacitor, the 11st capacitor, the 12nd capacitor, the 9th resistance, the tenth resistance, eleventh resistor and the 12nd
Resistance;
The 5th protection circuit includes the 13rd zener diode, the 5th switching diode and the 5th triode;It is described
6th protection circuit includes the 14th zener diode, the 6th switching diode and the 6th triode;The 7th protection circuit
Including the 15th zener diode, the 7th switching diode and the 7th triode;The 8th protection circuit includes the 16th steady
Press diode, the 8th switching diode and the 8th triode;
The grid of the 5th MOS power tubes passes through institute by the grid of the 9th resistance, the 6th MOS power tubes
State the positive output end that the tenth resistance is connected to the POE rectifier circuits;The grid of the 7th MOS power tubes passes through described
11 resistance, the 8th MOS power tubes grid the negative of the POE rectifier circuits is connected to by the twelfth resistor
Output end;
9th capacitor and the 9th resistor coupled in parallel, the tenth capacitor and the tenth resistor coupled in parallel, institute
It is in parallel with the eleventh resistor to state the 11st capacitor, the 12nd capacitor is in parallel with the twelfth resistor;
The cathode of 13rd zener diode connect with the drain electrode of the 5th MOS power tubes, anode and described the
The anode of five switching diodes connects, and the cathode of the 5th switching diode is connect with the base stage of the 5th triode, institute
The collector for stating the 5th triode is connect with the grid of the 5th MOS power tubes;
The cathode of 14th zener diode connect with the drain electrode of the 6th MOS power tubes, anode and described the
The anode of six switching diodes connects, and the cathode of the 6th switching diode is connect with the base stage of the 6th triode, institute
The collector for stating the 6th triode is connect with the grid of the 6th MOS power tubes;
The anode of 15th zener diode connect with the drain electrode of the 7th MOS power tubes, cathode and described the
The cathode of seven switching diodes connects, and the anode of the 7th switching diode is connect with the base stage of the 7th triode, institute
The collector for stating the 7th triode is connect with the grid of the 7th MOS power tubes;
The anode of 16th zener diode connect with the drain electrode of the 8th MOS power tubes, cathode and described the
The cathode of eight switching diodes connects, and the anode of the 8th switching diode is connect with the base stage of the 8th triode, institute
The collector for stating the 8th triode is connect with the grid of the 8th MOS power tubes;
The transmitting of the emitter of 5th triode, the emitter of the 6th triode with first triode
Pole connects, the transmitting of the emitter of the 7th triode, the emitter of the 8th triode with the third transistor
Pole connects;
The drain electrode of the 5th MOS power tubes is used as the POE rectifications after being connect with the drain electrode of the 7th MOS power tubes
The third input terminal of bridge circuit, conduct after the drain electrodes of the 6th MOS power tubes is connect with the drain electrode of the 8th MOS power tubes
4th input terminal of the POE rectifier circuits;
5th triode and the 6th triode are NPN triode, the 7th triode and the described 8th
Triode is PNP triode;
The 5th MOS power tubes and the 6th MOS power tubes are PMOS power tubes, the 7th MOS power tubes
It is NMOS power tubes with the 8th MOS power tubes;
The third input terminal and the 4th input terminal of the POE rectifier circuits constitute the power supply of the POE rectifier circuits
Second group of line pair of input.
Preferably, the POE rectifier circuits further include the 9th protection circuit, the 9th protection circuit includes the 17th
Resistance, the 18th resistance, the 9th switching diode and the 9th triode;
The base stage of 9th triode is connected to the positive output of the POE rectifier circuits by the 17th resistance
End, collector is connect with the emitter of first triode, emitter is connected to the third by the 18th resistance
The emitter of triode;The cathode of 9th switching diode connect with the base stage of the 9th triode, anode with it is described
The emitter of 9th triode connects;
9th triode is NPN triode.
Preferably, the 5th protection circuit further includes thirteenth resistor and the 13rd capacitor, the 13rd capacitance
Device and the thirteenth resistor are parallel between the base stage and emitter of the 5th triode;
The 6th protection circuit further includes the 14th resistance and the 14th capacitor, the 14th capacitor and described
14th resistance is parallel between the base stage and emitter of the 6th triode;
The 7th protection circuit further includes the 15th resistance and the 15th capacitor, the 15th capacitor and described
15th resistance is parallel between the base stage and emitter of the 7th triode;
The 8th protection circuit further includes the 16th resistance and the 16th capacitor, the 16th capacitor and described
16th resistance is parallel between the base stage and emitter of the 8th triode.
Preferably, the 5th protection circuit further includes the 17th zener diode, the 6th protection circuit further includes
18th zener diode, the 7th protection circuit further includes the 19th zener diode, and the 8th protection circuit also wraps
Include the 20th zener diode;
The anode of 17th zener diode is connect with the anode of the 13rd zener diode, and the described 17th
The cathode of zener diode is connect with the cathode of the 13rd zener diode;
The anode of 18th zener diode is connect with the anode of the 14th zener diode, and the described 18th
The cathode of zener diode is connect with the cathode of the 14th zener diode;
The anode of 19th zener diode is connect with the anode of the 15th zener diode, and the described 19th
The cathode of zener diode is connect with the cathode of the 15th zener diode;
The anode of 20th zener diode is connect with the anode of the 16th zener diode, and the described 20th
The cathode of zener diode is connect with the cathode of the 16th zener diode.
Preferably, the first MOS power tubes and the 3rd MOS power tubes are to pipe, the 2nd MOS power tubes with
The 4th MOS power tubes are to pipe.
Preferably, the 5th MOS power tubes and the 7th MOS power tubes are to pipe, the 6th MOS power tubes with
The 8th MOS power tubes are to pipe.
The positive effect of the utility model is:The utility model builds full-bridge synchronous rectifier by MOSFET,
Opposed polarity input is not only adapted to, since the conduction impedance of MOSFET is small, moreover it is possible to it is effectively reduced the power attenuation of rectifier bridge,
The power supply conversion efficiency for improving POE equipment also reduces cooling requirements, and circuit is simple, and occupancy PCB space is few, is conducive to electricity
Sub- product miniaturization.
Description of the drawings
Fig. 1 is the circuit diagram of the POE rectifier circuits based on MOS power tubes of the embodiments of the present invention 1.
Fig. 2 is for the embodiments of the present invention 1 based on the POE rectifier circuits of MOS power tubes in different input voltages
The effect diagram of lower output power and transfer efficiency.
Fig. 3 is for the embodiments of the present invention 1 based on the POE rectifier circuits of MOS power tubes in IEEE80 2.3at
Under CLASS4 with efficiency comparative's effect diagram of other rectifier bridges.
Fig. 4 is the circuit diagram of the POE rectifier circuits based on MOS power tubes of the embodiments of the present invention 2.
Fig. 5 is the circuit diagram of the POE rectifier circuits based on MOS power tubes of the embodiments of the present invention 3.
Specific implementation mode
The utility model is further illustrated below by the mode of embodiment, but is not therefore limited in the utility model
Among the embodiment described range.
Embodiment 1
As shown in Figure 1, the POE rectifier circuits based on MOS power tubes that the present embodiment is related to, including the first MOS power
Pipe M1, the 2nd MOS power tubes M2, the 3rd MOS power tubes M3, the 4th MOS power tubes M4, first resistor R1, second resistance R2,
Three resistance R3 and the 4th resistance R4;Wherein, after the drain electrode of the first MOS power tubes M1 is connect with the drain electrode of the 3rd MOS power tubes M3
The leakage of the drain electrode and the 4th MOS power tubes of first input end CTA, the 2nd MOS power tubes M2 as the POE rectifier circuits
As the second input terminal CTB of the POE rectifier circuits after pole M4 connections;The source electrode and the 2nd MOS of first MOS power tubes M1
Positive output end 48V+ after the source electrode connection of power tube M2 as the POE rectifier circuits, the source electrode of the 3rd MOS power tubes M3
Negative output terminal 48V- after being connect with the source electrode of the 4th MOS power tubes M4 as the POE rectifier circuits;First MOS power
The grid of pipe M1 is connected to the 2nd MOS power by the grid of first resistor R1, the 3rd MOS power tubes M3 by 3rd resistor R3
The drain electrode of pipe M2;The grid of 2nd MOS power tubes M2 passes through the 4th by the grid of second resistance R2, the 4th MOS power tubes M4
Resistance R4 is connected to the drain electrode of the first MOS power tubes M1;First MOS power tubes M1 and the 2nd MOS power tubes M2 is PMOS work(
Rate pipe, the 3rd MOS power tubes M3 and the 4th MOS power tubes M4 are NMOS power tubes;The first of the POE rectifier circuits is defeated
Enter to hold CTA and the second input terminal CTB to constitute first group of line pair of the power input of the POE rectifier circuits, this group of line to
It is connect in PSE out-put supplies end.
The operation principle of the POE rectifier circuits is as follows:It is assumed that the first input end of the POE rectifier circuits
CTA and the second input terminal CTB is separately connected the anode and cathode of PSE out-put supplies, i.e. first input end CTA connects PSE output electricity
The anode in source, the second input terminal CTB connect the cathode of PSE out-put supplies, have a body diode in view of MOS power tubes, and at this moment first
MOS power tubes M1 is connected in advance under the action of body diode, to source electrode and the PSE output electricity of the first MOS power tubes M1
The anode conducting in source, and the first MOS power tubes M1 is connected to the cathode of PSE out-put supplies by first resistor R1, passes through in this way
Suitable first resistor R1 is selected, allows for establishing cut-in voltage between the gate-to-source of the first MOS power tubes M1 so that the
One MOS power tubes M1 is steadily connected, such first MOS power tubes M1 conducting so that PSE out-put supplies anode with it is described
The positive output end 48V+ connections of POE rectifier circuits;Similarly, the 4th MOS power tubes M4 is under the pre- conducting of body diode, source
Pole is connected with the cathode of PSE out-put supplies, and its grid is connected to the anode of PSE out-put supplies by the 4th resistance R4, in this way
By selecting suitable first resistor R4, allows for establishing cut-in voltage between the gate-to-source of the 4th MOS power tubes M4, make
The 4th MOS power tubes M4 be steadily connected, such 4th MOS power tubes M4 conducting so that PSE out-put supplies cathode with
The negative output terminal 48V- connections of the POE rectifier circuits;And the 2nd MOS power tubes M2 and the 3rd MOS power tubes M3 are steadily
Shutdown.On the contrary, if first input end CTA connects the cathode of PSE out-put supplies, the second input terminal CTB is connecing PSE out-put supplies just
Pole, the first MOS power tubes M1 and the 4th MOS power tubes M4 are off at this time, and the 2nd MOS power tubes M2 and the 3rd MOS work(
Rate pipe M3 is on, and in this way after the POE rectifier circuits, the anode of PSE out-put supplies is still electric with the POE rectifier bridges
The positive output end 48V+ connections on road, cathode are still connected to the negative output terminal 48V- of the POE rectifier circuits.Therefore, the POE
Rectifier circuit can meet the application requirement that IEEE80 2.3af adapt to POE equipment arbitrary polarity input well.
In specific implementation, to make MOS power tubes more stably on or off, also use zener diode for each MOS
The gate-to-source of power tube provides stable gate source voltage, and specifically, the POE rectifier circuits further include the first voltage stabilizing two
Pole pipe VT1, the second zener diode VT2, third zener diode VT3 and the 4th zener diode VT4, wherein the first voltage stabilizing two
The cathode of pole pipe VT1 is connect with the source electrode of the first MOS power tubes M1, anode is connect with the grid of the first MOS power tubes M1;Second
The cathode of zener diode VT2 connect with the source electrode of the 2nd MOS power tubes M2, the grid of anode and the 2nd MOS power tubes M2 connect
It connects;The anode of third zener diode VT3 connect with the source electrode of the 3rd MOS power tubes M3, cathode and the 3rd MOS power tubes M3
Grid connects;The anode of 4th zener diode VT4 connect with the source electrode of the 4th MOS power tubes M4, cathode and the 4th MOS power
The grid of pipe M4 connects.
In addition, to obtain better circuit characteristic, when it is implemented, the first MOS power tubes M1 and the 3rd MOS power tubes M3
It is preferred that pipe, the 2nd MOS power tubes M2 and the 4th MOS power tubes M4 are preferably to pipe.
The present embodiment for ease of understanding, providing the present embodiment here, (2009 initial in current mainstream IEEE80 2.3at
Cloth) in implementation result data, being suitable for different CLASS grades to embody the present embodiment will go, and use CLASS4 grades here
Input voltage range is 44V~57V when being tested, and testing, and output power range is 0~30W (wherein output voltages
Vout is 5V, and corresponding output current is 0~6A), as a result as Figure 2-3.Wherein, Fig. 2 is the present embodiment in minimum voltage
Under the input voltage of (44V), nominal voltage (48V) and ceiling voltage (57V), the survey of the transfer efficiency of different output power state
Test result, the results showed that when power is more than 15W, transfer efficiency is generally higher than 90%;When Fig. 3 is using different rectifier bridges, no
Secondly the comparing result of corresponding transfer efficiency with power is to adopt it can be seen that not using the transfer efficiency highest of rectifier bridge
Be again the lower Schottky diode of pressure drop with MOS power tubes, it is worst be PN junction diode, such as output power be 20W
When (output voltage Vout be 5V, output current 4A), the transfer efficiencies of above-mentioned difference rectifier bridge forms is followed successively by 91.5%,
90.3%, 88.5% and 88%, so even if relatively low such as 20W in output power, the rectifier bridge based on MOS power tubes compares Schottky
The transfer efficiency of the rectifier bridge of diode is also higher by 1.8%, if, by the IEEE 802.3bt standards of implementation, working as output from now on
When power reaches 71W, the transfer efficiency advantage of the rectifier bridge of MOS power tubes will be more prominent.
Embodiment 2
As shown in figure 4, the POE rectifier circuits based on MOS power tubes that the present embodiment is related to, using zener diode,
Switching diode and triode composition performance are more excellent, and can be by the further clamper of voltage between the gate-to-source of MOS power tubes
Protection circuit carry out the single zener diode in alternate embodiment 1, to protection of the enhancing to MOS power tubes.Specifically, institute
It further includes the first protection circuit 101, second protection circuit 102, the third protection protection of circuit the 103, the 4th to state POE rectifier circuits
Circuit 104, the first capacitor C1, the second capacitor C2, third capacitor C3 and the 4th capacitor C4;
Wherein, the first protection circuit 101 includes the 5th zener diode VT5, first switch diode VD1 and the one or three pole
Pipe Q1;Second protection circuit 102 includes the 6th zener diode VT6, second switch diode VD2 and the second triode Q2;The
Three protection circuits 103 include the 7th zener diode VT7, third switching diode VD3 and third transistor Q3;4th protection electricity
Road 104 includes the 8th zener diode VT8, the 4th switching diode VD4 and the 4th triode Q4;
First capacitor C1 is in parallel with first resistor R1, and the second capacitor C2 is in parallel with second resistance R2, third capacitor
C3 is in parallel with 3rd resistor R3, and the 4th capacitor C4 is in parallel with the 4th resistance R4;The grid of first MOS power tubes M1 passes through first
Resistance R1, the 2nd MOS power tubes M2 grid the positive output end of the POE rectifier circuits is connected to by second resistance R2
48V+;The grid of 3rd MOS power tubes M3 passes through the 4th resistance R4 by the grid of 3rd resistor R3, the 4th MOS power tubes M4
It is connected to the negative output terminal 48V- of the POE rectifier circuits;
The cathode of 5th zener diode VT5 connect with the drain electrode of the first MOS power tubes M1, two pole of anode and first switch
The anode of pipe VD1 connects, and the cathode of first switch diode VD1 is connect with the base stage of the first triode Q1, the first triode Q1
Collector connect with the grid of the first MOS power tubes M1;The cathode of 6th zener diode VT6 and the 2nd MOS power tubes M2
Drain electrode connection, anode and second switch diode VD2 anode connect, the cathode and the two or three of second switch diode VD2
The base stage of pole pipe Q2 connects, and the collector of the second triode Q2 is connect with the grid of the 2nd MOS power tubes M2;7th voltage stabilizing, two pole
The drain electrode connection of the anode of pipe VT7 and the 3rd MOS power tubes M3, the cathode connection of cathode and third switching diode VD3, third
The anode of switching diode VD3 is connect with the base stage of third transistor Q3, the collector of third transistor Q3 and the 3rd MOS power
The grid of pipe M3 connects;The anode of 8th zener diode VT8 connect with the drain electrode of the 4th MOS power tubes M4, cathode and the 4th
The cathode of switching diode VD4 connects, and the anode of the 4th switching diode VD4 is connect with the base stage of the 4th triode Q4, and the 4th
The collector of triode Q4 is connect with the grid of the 4th MOS power tubes M4;The emitter and the second triode of first triode Q1
The emitter of Q2 connects, and the emitter of third transistor Q3 is connect with the emitter of the 4th triode Q4;First triode Q1 and
Second triode Q2 is NPN triode, and third transistor Q3 and the 4th triode Q4 are PNP triode.
In this way by choosing suitable zener diode so that when the first input end CTA of the POE rectifier circuits connects
When connecing the cathode of the second input terminal CTB connection PSE output voltages of positive, the described POE rectifier circuits of PSE output voltages,
It is operated in suitable voltage stabilizing state by the 5th zener diode VT5, and after triode ON so that the first MOS power tubes M1
Gate-to-source between voltage can maintain steady state value, to ensure that the first MOS power tube M1 steady operations, the first protection electricity
Road 101 effectively can realize protection and grid inverse current to the backward voltage of the gate-to-source of the first MOS power tubes M1
Cut-off, preferably protects the first MOS power tubes M1;Similarly, the 4th protection circuit 104 also can be effectively to the 4th MOS power
The backward voltage of the gate-to-source of pipe M4 realizes protection and the cut-off of grid inverse current, preferably protects the 4th MOS power
Pipe M4.If on the contrary, the cathode of the first input end CTA connection PSE output voltages of the POE rectifier circuits, the POE rectifications
When the anode of the second input terminal CTB connection PSE output voltages of bridge circuit, correspondingly the second protection circuit 102 is effectively protected
2nd MOS power tube M2, third protect the 3rd MOS power tube M3 of 103 effective protection of circuit, and the course of work is same as described above, this
In it is not reinflated.
In the present embodiment, between the grid and source electrode of each MOS power tubes and it is connected to resistance and capacitor, such as first
The grid and source electrode of MOS power tubes M1 simultaneously connect first resistor R1, the first capacitor C1, such first resistor R1 and the first capacitor
C1 plays current limliting, filter action, prevents the first MOS power tubes M1 from generating oscillation between Drain-Source on, off moment
Voltage, being then superimposed with gate source voltage Vgs by gate drain capacitor Cgd leads to positive feedback, so as to cause circuit oscillation, very
To damage MOS power tubes.
The present embodiment in the specific implementation, to enable triode preferably turn-on and turn-off, also in the base stage of triode
Parallel resistance and capacitance between emitter, specifically, the first protection circuit 101 further includes the 5th resistance R5 and the 5th capacitor
C5, the 5th capacitor C5 and the 5th resistance R5 are parallel between the base stage and emitter of the first triode Q1;Second protection electricity
Road 102 further includes the 6th resistance R6 and the 6th capacitor C6, and the 6th capacitor C6 and the 6th resistance R6 are parallel to the two or three pole
Between the base stage and emitter of pipe Q2;It further includes the 7th resistance R7 and the 7th capacitor C7, the 7th capacitance that third, which protects circuit 103,
Device C7 and the 7th resistance R7 are parallel between the base stage and emitter of third transistor Q3;4th protection circuit 104 further include
8th resistance R8 and the 8th capacitor C8, the 8th capacitor C8 and the 8th resistance R8 be parallel to the base stage of the 4th triode Q4 with
Between emitter.
In addition, to improve the job stability and reliability of the POE rectifier circuits, also on every zener diode
A zener diode in parallel again, i.e., when it is implemented, the first protection circuit 101 further includes the 9th zener diode VT9, the 9th
The anode of zener diode VT9 is connect with the anode of the 5th zener diode VT5, the cathode of the 9th zener diode VT9 and
The cathode of five zener diode VT5 connects;Second protection circuit 102 further includes the tenth zener diode VT10, the tenth voltage stabilizing two
The cathode of the anode of the anode of pole pipe VT10 and the 6th zener diode VT6, the tenth zener diode VT10 is steady with the 6th respectively
Press the cathode connection of diode VT6;It further includes the 11st zener diode VT11, the 11st voltage stabilizing two that third, which protects circuit 103,
The anode of pole pipe VT11 is connect with the anode of the 7th zener diode VT7, the cathode and the 7th of the 11st zener diode VT11
The cathode of zener diode VT7 connects;4th protection circuit 104 further includes the 12nd zener diode VT12, the 12nd voltage stabilizing
The anode of diode VT12 is connect with the anode of the 8th zener diode VT8, the cathode of the 12nd zener diode VT12 and
The cathode of eight zener diode VT8 connects.
Embodiment 3
As shown in figure 5, the POE rectifier circuits based on MOS power tubes that the present embodiment is related to, are the bases in embodiment 2
On plinth, by increasing rectifier circuit identical with the POE rectifier circuits of embodiment 2 all the way, to constitute this implementation
The two-way POE rectifier circuits of example, are suitable for different application requirements.Specifically, the POE rectifier circuits further include the 5th
MOS power tubes M5, the 6th MOS power tubes M6, the 7th MOS power tubes M7, the 8th MOS power tubes M8, the 5th protection circuit 105,
6th protection circuit 106, the 7th protection circuit 107, the 8th protection circuit 108, the 9th capacitor C9, the tenth capacitor C10, the
11 capacitor C11, the 12nd capacitor C12, the tenth resistance R10 eleventh resistors R11 of the 9th resistance R9 and twelfth resistor
R12;
Wherein, the 5th protection circuit 105 includes the 13rd zener diode VT13, the 5th switching diode VD5 and the 5th
Triode Q5;6th protection circuit 106 includes the 14th zener diode VT14, the 6th switching diode VD6 and the six or three pole
Pipe Q6;7th protection circuit 107 includes the 15th zener diode VT15, the 7th switching diode VD7 and the 7th triode Q7;
8th protection circuit 108 includes the 16th zener diode VT16, the 8th switching diode VD8 and the 8th triode Q8;
9th capacitor C9 is in parallel with the 9th resistance R9, and the tenth capacitor C10 is in parallel with the tenth resistance R10, the 11st electricity
Container C11 is in parallel with eleventh resistor R11, and the 12nd capacitor C12 is in parallel with twelfth resistor R12;5th MOS power tubes M5
Grid the POE rectifier bridges are connected to by the tenth resistance R10 by the grid of the 9th resistance R9, the 6th MOS power tubes M6
The positive output end 48V+ of circuit;The grid that the grid of 7th MOS power tubes M7 passes through eleventh resistor R11, the 8th MOS power tubes M8
Pole is connected to the negative output terminal 48V- of the POE rectifier circuits by twelfth resistor R12;
The cathode of 13rd zener diode VT13 is connect with the drain electrode of the 5th MOS power tubes M5, anode and the 5th switchs
The anode of diode VD5 connects, and the cathode of the 5th switching diode VD5 is connect with the base stage of the 5th triode Q5, the five or three pole
The collector of pipe Q5 is connect with the grid of the 5th MOS power tubes M5;The cathode and the 6th MOS work(of 14th zener diode VT14
Rate pipe M6 drain electrode connection, anode connect with the anode of the 6th switching diode VD6, the cathode of the 6th switching diode VD6 and
The base stage of 6th triode Q6 connects, and the collector of the 6th triode Q6 is connect with the grid of the 6th MOS power tubes M6;15th
The drain electrode connection of the anode of zener diode VT15 and the 7th MOS power tubes M7, the cathode of cathode and the 7th switching diode VD7
Connection, the anode of the 7th switching diode VD7 connect with the base stage of the 7th triode Q7, the collector of the 7th triode Q7 and the
The grid of seven MOS power tubes M7 connects;The drain electrode of the anode of 16th zener diode VT16 and the 8th MOS power tubes M8 connect
Connect, cathode is connect with the cathode of the 8th switching diode VD8, the anode of the 8th switching diode VD8 and the 8th triode Q8's
Base stage connects, and the collector of the 8th triode Q8 is connect with the grid of the 8th MOS power tubes M8;The transmitting of 5th triode Q5
Pole, the 6th triode Q6 emitter connect with the emitter of the first triode Q1, the emitter of the 7th triode Q7, the 8th
The emitter of triode Q8 is connect with the emitter of third transistor Q3;
The drain electrode of 5th MOS power tubes M5 is electric as the POE rectifier bridges after being connect with the drain electrode of the 7th MOS power tubes M7
The drain electrode of third the input terminal CTC, the 6th MOS power tubes M6 on road are used as described after being connect with the drain electrode of the 8th MOS power tubes M8
4th input terminal CTD of POE rectifier circuits;
5th triode Q5 and the 6th triode Q6 is NPN triode, and the 7th triode Q7 and the 8th triode Q8 are equal
For PNP triode;5th MOS power tubes M5 and the 6th MOS power tubes M6 is PMOS power tubes, the 7th MOS power tubes M7 and
8th MOS power tubes M8 is NMOS power tubes;
The third input terminal CTC of the POE rectifier circuits and the 4th input terminal CTD constitute the POE rectifier circuits
Power input second group of line pair, such first group of line may make up (i.e. CTC, CTD) (i.e. CTA, CTB) and second group of line
The 8PIN of POE is inputted, and to constitute the POE rectifier bridges of two-way, can adapt to two kinds of lines as defined in IEEE80 2.3af completely in this way
Sequence power supply mode.
It is further such that the 5th triode Q5 to the 8th triode Q8 preferably turn-on and turn-off, go back in the present embodiment
Shunt capacitor and resistance between the base stage and emitter of these triodes, i.e., the 5th protection circuit 105 further includes the 13rd
Resistance R13 and the 13rd capacitor C13, the 13rd capacitor C13 and thirteenth resistor R13 are parallel to the 5th triode Q5's
Between base stage and emitter;6th protection circuit 106 further includes the 14th resistance R14 and the 14th capacitor C14, the 14th electricity
Container C14 and the 14th resistance R14 are parallel between the base stage and emitter of the 6th triode Q6;7th protection circuit 107
Further include that the 15th resistance R15 and the 15th capacitor C15, the 15th capacitor C15 and the 15th resistance R15 are parallel to
Between the base stage and emitter of seven triode Q7;8th protection circuit 108 further includes the 16th resistance R16 and the 16th capacitor
C16, the 16th capacitor C16 and the 16th resistance R16 are parallel between the base stage and emitter of the 8th triode Q8.
In addition, to improve the job stability and reliability of the POE rectifier circuits, also on every zener diode
A zener diode in parallel again, i.e., when it is implemented, the 5th protection circuit 105 further includes the 17th zener diode VT17,
The anode of 17th zener diode VT17 is connect with the anode of the 13rd zener diode VT13, the 17th zener diode
The cathode of VT13 is connect with the cathode of the 13rd zener diode VT13;6th protection circuit 106 further includes the 18th voltage stabilizing two
Pole pipe VT18, the anode of the 18th zener diode VT18 are connect with the anode of the 14th zener diode VT14, and the 18th is steady
The cathode of pressure diode VT18 is connect with the cathode of the 14th zener diode VT14;7th protection circuit 107 further includes the tenth
Nine zener diode VT19, the anode of the 19th zener diode VT19 are connect with the anode of the 15th zener diode VT15,
The cathode of 19th zener diode VT19 is connect with the cathode of the 15th zener diode VT15;8th protection circuit 108 is also
Including the 20th zener diode VT20, the sun of the anode and the 16th zener diode VT16 of the 20th zener diode VT20
Pole connects, and the cathode of the 20th zener diode VT20 is connect with the cathode of the 16th zener diode VT16.
In the present embodiment, for further two-way POE rectifier bridges are preferably isolated and are protected, when it is implemented, the POE
Rectifier circuit further includes the 9th protection circuit 109, and the 9th protection circuit 109 includes the 17th resistance, the 18th resistance, the 9th
Switching diode VD9 and the 9th triode Q9;Wherein, the base stage of the 9th triode Q9 is connected to institute by the 17th resistance R17
State that the positive output end 48V+ of POE rectifier circuits, collector is connect with the emitter of the first triode Q1, emitter is by the tenth
Eight resistance R18 are connected to the emitter of third transistor Q3;The base of the cathode and the 9th triode Q9 of 9th switching diode VD9
Pole connection, anode are connect with the emitter of the 9th triode Q9;9th triode Q9 is NPN triode.
In addition, to obtain better electric energy, the 5th MOS power tubes M5 and the 7th MOS power tubes M7 are to pipe, the 6th MOS
Power tube M6 and the 8th MOS power tubes M8 is to pipe.
Although the foregoing describe specific embodiment of the present utility model, it will be appreciated by those of skill in the art that
This is merely illustrative of, and the scope of protection of the utility model is defined by the appended claims.Those skilled in the art
Under the premise of without departing substantially from the principles of the present invention and essence, many changes and modifications may be made,
But these change and modification each fall within the scope of protection of the utility model.
Claims (11)
1. a kind of POE rectifier circuits based on MOS power tubes, which is characterized in that including the first MOS power tubes, the 2nd MOS work(
Rate pipe, the 3rd MOS power tubes, the 4th MOS power tubes, first resistor, second resistance, 3rd resistor and the 4th resistance;
The drain electrode of the first MOS power tubes is electric as the POE rectifier bridges after being connect with the drain electrode of the 3rd MOS power tubes
The first input end on road, the drain electrodes of the 2nd MOS power tubes connect with the drain electrode of the 4th MOS power tubes after as described
Second input terminal of POE rectifier circuits;
The source electrode of the first MOS power tubes is electric as the POE rectifier bridges after being connect with the source electrode of the 2nd MOS power tubes
The positive output end on road, the source electrodes of the 3rd MOS power tubes connect with the source electrode of the 4th MOS power tubes after as described
The negative output terminal of POE rectifier circuits;
The grid of the first MOS power tubes passes through described by the grid of the first resistor, the 3rd MOS power tubes
Three resistance are connected to the drain electrode of the 2nd MOS power tubes;The grid of the 2nd MOS power tubes by the second resistance,
The grid of the 4th MOS power tubes is connected to the drain electrode of the first MOS power tubes by the 4th resistance;
The first MOS power tubes and the 2nd MOS power tubes are PMOS power tubes, the 3rd MOS power tubes and institute
It is NMOS power tubes to state the 4th MOS power tubes;
The first input end and the second input terminal of the POE rectifier circuits constitute the power input of the POE rectifier circuits
First group of line pair.
2. the POE rectifier circuits based on MOS power tubes as described in claim 1, which is characterized in that the POE rectifier bridges
Circuit further includes the first zener diode, the second zener diode, third zener diode and the 4th zener diode, and described
The cathode of one zener diode connect with the source electrode of the first MOS power tubes, the grid of anode and the first MOS power tubes
Connection, the cathode of second zener diode connect with the source electrode of the 2nd MOS power tubes, anode and the 2nd MOS
The grid of power tube connects, the anode of the third zener diode connect with the source electrode of the 3rd MOS power tubes, cathode and
The grid of the 3rd MOS power tubes connects, the source electrode of the anode and the 4th MOS power tubes of the 4th zener diode
Connection, cathode are connect with the grid of the 4th MOS power tubes.
3. the POE rectifier circuits based on MOS power tubes as described in claim 1, which is characterized in that the POE rectifier bridges
Circuit further includes the first protection circuit, the second protection circuit, third protection circuit, the 4th protection circuit, the first capacitor, second
Capacitor, third capacitor and the 4th capacitor;
The first protection circuit includes the 5th zener diode, first switch diode and the first triode;
The second protection circuit includes the 6th zener diode, second switch diode and the second triode;
The third protection circuit includes the 7th zener diode, third switching diode and third transistor;
The 4th protection circuit includes the 8th zener diode, the 4th switching diode and the 4th triode;
The grid of the first MOS power tubes passes through described by the grid of the first resistor, the 2nd MOS power tubes
Two resistance are connected to the positive output end of the POE rectifier circuits;The grid of the 3rd MOS power tubes passes through third electricity
It hinders, the grid of the 4th MOS power tubes is connected to the negative output terminal of the POE rectifier circuits by the 4th resistance;
First capacitor is in parallel with the first resistor, and second capacitor is in parallel with the second resistance, and described
Three capacitors are in parallel with the 3rd resistor, the 4th capacitor and the 4th resistor coupled in parallel;
The cathode of 5th zener diode connect with the drain electrode of the first MOS power tubes, anode and the first switch
The anode of diode connects, and the cathode of the first switch diode is connect with the base stage of first triode, and described first
The collector of triode is connect with the grid of the first MOS power tubes;
The cathode of 6th zener diode connect with the drain electrode of the 2nd MOS power tubes, anode and the second switch
The anode of diode connects, and the cathode of the second switch diode is connect with the base stage of second triode, and described second
The collector of triode is connect with the grid of the 2nd MOS power tubes;
The anode of 7th zener diode is connect with the drain electrode of the 3rd MOS power tubes, cathode is switched with the third
The cathode of diode connects, and the anode of the third switching diode is connect with the base stage of the third transistor, the third
The collector of triode is connect with the grid of the 3rd MOS power tubes;
The anode of 8th zener diode is connect with the drain electrode of the 4th MOS power tubes, cathode is switched with the described 4th
The cathode of diode connects, and the anode of the 4th switching diode is connect with the base stage of the 4th triode, and the described 4th
The collector of triode is connect with the grid of the 4th MOS power tubes;
The emitter of first triode is connect with the emitter of second triode, the emitter of the third transistor
It is connect with the emitter of the 4th triode;
First triode and second triode are NPN triode, the third transistor and the four or three pole
Pipe is PNP triode.
4. the POE rectifier circuits based on MOS power tubes as claimed in claim 3, which is characterized in that the first protection electricity
Road further includes the 5th resistance and the 5th capacitor, and the 5th capacitor and the 5th resistance are parallel to the one or three pole
Between the base stage and emitter of pipe;
The second protection circuit further includes the 6th resistance and the 6th capacitor, and the 6th capacitor and the 6th resistance are equal
It is parallel between the base stage and emitter of second triode;
The third protection circuit further includes the 7th resistance and the 7th capacitor, and the 7th capacitor and the 7th resistance are equal
It is parallel between the base stage and emitter of the third transistor;
The 4th protection circuit further includes the 8th resistance and the 8th capacitor, and the 8th capacitor and the 8th resistance are equal
It is parallel between the base stage and emitter of the 4th triode.
5. the POE rectifier circuits based on MOS power tubes as claimed in claim 3, which is characterized in that the first protection electricity
Road further includes the 9th zener diode, and the second protection circuit further includes the tenth zener diode, and the third protects circuit
Further include the 11st zener diode, the 4th protection circuit further includes the 12nd zener diode;
The anode of 9th zener diode is connect with the anode of the 5th zener diode, the 9th zener diode
Cathode connect with the cathode of the 5th zener diode;
The anode of the anode and the 6th zener diode of tenth zener diode, the moon of the tenth zener diode
Pole is connected with the cathode of the 6th zener diode respectively;
The anode of 11st zener diode is connect with the anode of the 7th zener diode, the 11st voltage stabilizing two
The cathode of pole pipe is connect with the cathode of the 7th zener diode;
The anode of 12nd zener diode is connect with the anode of the 8th zener diode, the 12nd voltage stabilizing two
The cathode of pole pipe is connect with the cathode of the 8th zener diode.
6. the POE rectifier circuits based on MOS power tubes as claimed in claim 3, which is characterized in that the POE rectifier bridges
Circuit further includes the 5th MOS power tubes, the 6th MOS power tubes, the 7th MOS power tubes, the 8th MOS power tubes, the 5th protection electricity
Road, the 6th protection circuit, the 7th protection circuit, the 8th protection circuit, the 9th capacitor, the tenth capacitor, the 11st capacitor,
12nd capacitor, the 9th resistance, the tenth resistance, eleventh resistor and twelfth resistor;
The 5th protection circuit includes the 13rd zener diode, the 5th switching diode and the 5th triode;Described 6th
It includes the 14th zener diode, the 6th switching diode and the 6th triode to protect circuit;It is described 7th protection circuit include
15th zener diode, the 7th switching diode and the 7th triode;The 8th protection circuit includes the 16th voltage stabilizing two
Pole pipe, the 8th switching diode and the 8th triode;
The grid of the 5th MOS power tubes passes through described by the grid of the 9th resistance, the 6th MOS power tubes
Ten resistance are connected to the positive output end of the POE rectifier circuits;The grid of the 7th MOS power tubes passes through the described 11st
Resistance, the 8th MOS power tubes grid the negative output of the POE rectifier circuits is connected to by the twelfth resistor
End;
9th capacitor and the 9th resistor coupled in parallel, the tenth capacitor and the tenth resistor coupled in parallel, described the
11 capacitors are in parallel with the eleventh resistor, and the 12nd capacitor is in parallel with the twelfth resistor;
The cathode of 13rd zener diode is connect with the drain electrode of the 5th MOS power tubes, anode is opened with the described 5th
The anode connection of diode is closed, the cathode of the 5th switching diode connect with the base stage of the 5th triode, and described the
The collector of five triodes is connect with the grid of the 5th MOS power tubes;
The cathode of 14th zener diode is connect with the drain electrode of the 6th MOS power tubes, anode is opened with the described 6th
The anode connection of diode is closed, the cathode of the 6th switching diode connect with the base stage of the 6th triode, and described the
The collector of six triodes is connect with the grid of the 6th MOS power tubes;
The anode of 15th zener diode is connect with the drain electrode of the 7th MOS power tubes, cathode is opened with the described 7th
The cathode connection of diode is closed, the anode of the 7th switching diode connect with the base stage of the 7th triode, and described the
The collector of seven triodes is connect with the grid of the 7th MOS power tubes;
The anode of 16th zener diode is connect with the drain electrode of the 8th MOS power tubes, cathode is opened with the described 8th
The cathode connection of diode is closed, the anode of the 8th switching diode connect with the base stage of the 8th triode, and described the
The collector of eight triodes is connect with the grid of the 8th MOS power tubes;
The emitter of 5th triode, the emitter of the 6th triode connect with the emitter of first triode
It connects, the emitter of the 7th triode, the emitter of the 8th triode connect with the emitter of the third transistor
It connects;
The drain electrode of the 5th MOS power tubes is electric as the POE rectifier bridges after being connect with the drain electrode of the 7th MOS power tubes
The third input terminal on road, the drain electrodes of the 6th MOS power tubes connect with the drain electrode of the 8th MOS power tubes after as described
4th input terminal of POE rectifier circuits;
5th triode and the 6th triode are NPN triode, the 7th triode and the eight or three pole
Pipe is PNP triode;
The 5th MOS power tubes and the 6th MOS power tubes are PMOS power tubes, the 7th MOS power tubes and institute
It is NMOS power tubes to state the 8th MOS power tubes;
The third input terminal and the 4th input terminal of the POE rectifier circuits constitute the power input of the POE rectifier circuits
Second group of line pair.
7. the POE rectifier circuits based on MOS power tubes as claimed in claim 6, which is characterized in that the POE rectifier bridges
Circuit further includes the 9th protection circuit, and the 9th protection circuit includes the 17th resistance, the 18th resistance, two pole of the 9th switch
Pipe and the 9th triode;
The base stage of 9th triode be connected to by the 17th resistance POE rectifier circuits positive output end,
Collector is connect with the emitter of first triode, emitter is connected to the three or three pole by the 18th resistance
The emitter of pipe;The cathode of 9th switching diode connect with the base stage of the 9th triode, anode and the described 9th
The emitter of triode connects;
9th triode is NPN triode.
8. the POE rectifier circuits based on MOS power tubes as claimed in claim 6, which is characterized in that the 5th protection electricity
Road further includes thirteenth resistor and the 13rd capacitor, and the 13rd capacitor and the thirteenth resistor are parallel to described
Between the base stage and emitter of 5th triode;
The 6th protection circuit further includes the 14th resistance and the 14th capacitor, the 14th capacitor and the described tenth
Four resistance are parallel between the base stage and emitter of the 6th triode;
The 7th protection circuit further includes the 15th resistance and the 15th capacitor, the 15th capacitor and the described tenth
Five resistance are parallel between the base stage and emitter of the 7th triode;
The 8th protection circuit further includes the 16th resistance and the 16th capacitor, the 16th capacitor and the described tenth
Six resistance are parallel between the base stage and emitter of the 8th triode.
9. the POE rectifier circuits based on MOS power tubes as claimed in claim 6, which is characterized in that the 5th protection electricity
Road further includes the 17th zener diode, and the 6th protection circuit further includes the 18th zener diode, the 7th protection
Circuit further includes the 19th zener diode, and the 8th protection circuit further includes the 20th zener diode;
The anode of 17th zener diode is connect with the anode of the 13rd zener diode, the 17th voltage stabilizing
The cathode of diode is connect with the cathode of the 13rd zener diode;
The anode of 18th zener diode is connect with the anode of the 14th zener diode, the 18th voltage stabilizing
The cathode of diode is connect with the cathode of the 14th zener diode;
The anode of 19th zener diode is connect with the anode of the 15th zener diode, the 19th voltage stabilizing
The cathode of diode is connect with the cathode of the 15th zener diode;
The anode of 20th zener diode is connect with the anode of the 16th zener diode, the 20th voltage stabilizing
The cathode of diode is connect with the cathode of the 16th zener diode.
10. the POE rectifier circuits based on MOS power tubes as described in claim 1, which is characterized in that the first MOS work(
Rate pipe is to pipe with the 3rd MOS power tubes, and the 2nd MOS power tubes are to pipe with the 4th MOS power tubes.
11. the POE rectifier circuits based on MOS power tubes as claimed in claim 6, which is characterized in that the 5th MOS work(
Rate pipe is to pipe with the 7th MOS power tubes, and the 6th MOS power tubes are to pipe with the 8th MOS power tubes.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109617430A (en) * | 2018-12-03 | 2019-04-12 | 广州金升阳科技有限公司 | A kind of full-bridge synchronous rectification controller |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109617430A (en) * | 2018-12-03 | 2019-04-12 | 广州金升阳科技有限公司 | A kind of full-bridge synchronous rectification controller |
CN109617430B (en) * | 2018-12-03 | 2019-10-29 | 广州金升阳科技有限公司 | A kind of full-bridge synchronous rectification controller |
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