CN207679527U - The anti-safe microneedle array device of burning of one kind - Google Patents
The anti-safe microneedle array device of burning of one kind Download PDFInfo
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- CN207679527U CN207679527U CN201621464641.3U CN201621464641U CN207679527U CN 207679527 U CN207679527 U CN 207679527U CN 201621464641 U CN201621464641 U CN 201621464641U CN 207679527 U CN207679527 U CN 207679527U
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Abstract
The utility model discloses the anti-safe microneedle array devices of burning of one kind, formed by hollow metal micropin, the seal wire of SI semi-insulation in hollow metal micropin and positioned at insulation structure between the two, the seal wire of SI semi-insulation refer to both ends be powered, the conductive and heat-conductive optical material of interlude outer application insulating coating.When not working, the seal wire front end of SI semi-insulation is in hollow metal micropin, when work, the seal wire front end of SI semi-insulation is stretched out, and is discharged target site or is heated to treat, after terminating treatment, in the seal wire retraction hollow metal micropin of SI semi-insulation, anti-safe microneedle array device of burning is extracted.The hollow metal micropin inner wall of the utility model coats insulated heat material, and the fever of hollow metal micropin is avoided to cause epidermis injury.The utility model is especially suitable for subcutaneous instantaneous fulguration, hot bright or photon therapy, and stimulation Collagen Proliferation achievees the purpose that beauty therapeutic without damaging epidermis, it can also be used to topical treatment of skin conditions.
Description
Technical field
The invention belongs to field of medical products, and in particular to the anti-safe microneedle array device of burning of one kind.
Background technology
The aging of skin, the formation of wrinkle are a necessary processes of mankind's experience, are influenced by many factors, with people
Living standard continuous improvement, higher and higher to beautiful pursuit, these damages such as chronic skin aging, wrinkle, acne scars are held
Dermatoses are also gradually paid attention to by people extensively.Therefore, various to be used for treating the technical methods of these discosmetic dermatosis also not
Disconnected appearance, especially radio frequency micropin, heat radiofrequency is provided after micropin is entered skin corium, is expedited the emergence of ossein and is promoted elastomer
Recombination, to treatment recess damaged skin, such as concave-convex hole, scar, wrinkle, striae of pregnancy and enlarged pores significant effect.But market
The product of upper sale is all the solid microneedles of different thicknesses, and 49 solid metal micropin permutations of generally use, micropin position is inserted into
Dermal layer of the skin, moment emit radio frequency, and instantaneous temperature causes moment collagen egg white injury, still, in micropin up to 50-60 degree
During extraction, since micropin Local residues heat can cause the different degrees of damage of epidermis, it is easy to leave scar even
There is pigementation, this problem at beauty treatment doctor problem, ask the bad dream of beautiful person, for this purpose, we have developed tape insulation sky
The micropin permutation of heart micropin casing in retraction casing, there is insulated thermal insulating layer, micropin is made to remain after electric grade moment fever in casing
Heat be not transferred to epidermis, it is impaired and the heavy equal side effects of color occur so as to avoid epidermis, there is very real clinic
Application value.
Invention content
The invention discloses the anti-safe microneedle array device of burning of one kind, by hollow metal micropin, to be set to hollow metal micro-
The seal wire of SI semi-insulation in needle and the insulation structure group between hollow metal micropin and the seal wire of SI semi-insulation
At the more hollow metal microneedle array formulas are fixed in micropin fixed plate, and the seal wire of the SI semi-insulation is welded on energization
In fixed plate, the seal wire of the SI semi-insulation penetrates in hollow metal micropin, between the micropin fixed plate and energization fixed plate
Equipped with resetting spring；
When the anti-safe microneedle array device of burning is in standby, it is micro- that the seal wire of SI semi-insulation is in hollow metal
In needle, do not expose transmitting terminal；When in emission state, the seal wire of SI semi-insulation is released by propulsion device, transmitting treatment；Stop hair
After penetrating, the seal wire transmitting terminal of SI semi-insulation is retracted under the action of resetting spring in hollow metal micropin.
Wherein, the insulation structure is the more empty insulated pipes useds being sleeved on the outside of the seal wire of SI semi-insulation or is coated in sky
The porous insulation heat insulating coat of heart metal micro-needle inner wall.
Above-mentioned anti-safe microneedle array device of burning includes at least 2 or more hollow metal micropins, and diameter is less than
500 microns, the diameter of the seal wire of the SI semi-insulation is less than 300 microns；
When the anti-safe microneedle array device of burning is in standby, it is micro- that the seal wire of SI semi-insulation is in hollow metal
In needle, do not expose transmitting terminal；When in emission state, the seal wire of SI semi-insulation is released by propulsion device, transmitting treatment；Stop hair
After penetrating, the seal wire transmitting terminal of SI semi-insulation is retracted under the action of resetting spring in hollow metal micropin；
Emitted energy source is radio frequency, microwave or light source, and the light source is one kind in laser, infrared and LED；
The pushing meanss can be the syringe needle Push Technology that relevant device uses in the market, and can be electronic can also be
Mechanical driven, preferably the syringe needle pushing meanss of radio frequency micropin instrument.
Wherein, porous insulated heat material is coated on the wall surface of the hollow metal micropin, the SI semi-insulation
Seal wire both ends are conductive, and rest part is coated with nanometer insulating coating.
Preferably, the insulated heat material is selected from organic and inorganic, solid, fluid insulation, heat-insulating material, specially mine
Object insulating oil, synthetic insulating oil (silicone oil, detergent alkylate, polyisobutene, isopropyl biphenyl, diarylethane etc.), insulated paint,
Insulating cement, non-conductive fibre product, plastics, rubber, varnished cloth paint pipe, insulation impregnating fibre, electrician's film, glues insulating paper
One or more of band, mica, glass, ceramics, carbon fibre material and carbon nanotube combine.
Wherein, the seal wire of the SI semi-insulation is made of conductive, heat conduction or optical material, wherein the optical material choosing
From silica fibre, fluoride glass fiber, chalcogenide glass fiber, single crystal glass optical fiber, polycrystalline fiber, photonic crystal fiber, gather
Methyl methacrylate plastics optical fiber, polystyrene plastics optical fiber, polycarbonate plastic optical fiber and heat-resistant plastic optical fiber.
Preferably, one kind in the preferred insulating oil of the insulated heat material, insulated paint and insulating cement.
Anti- safe microneedle array device of burning of the present invention stimulates Collagen Proliferation for subcutaneous instantaneous fulguration, heating.
Anti- safe microneedle array device of burning of the present invention, all due to the seal wire of hollow metal micropin and SI semi-insulation
It is the workpiece of micron order size, assembling process needs to complete by the close fit device with micro- enlarging function.
Insulated heat material category is various, and the present invention includes all disclosed suitable metal coating materials, such as heat-insulated high score
Sub- material (heat insulating polymer materials).Although most high molecular materials all have certain thermal insulation
Can, but in order to improve its performance, most high molecular materials for using as heat-insulating material are made as porous.More typical
Adiabatic high molecular material includes:(1) foaming polypropylene occurred frequently, temperature in use are less than 120 DEG C, are chiefly used in the heat-insulated of general heat supply pipeline
Material;(2) expanded polystyrene (EPS), temperature in use be less than 100 DEG C, be chiefly used in heat-insulated common building and thermal insulation cup and freezer every
Heat;(3) polyurethane foam plastics is divided into hard and two kinds soft, and heat-insulating property is excellent, is chiefly used in freezer, spherical tank, heat supply pipeline
Etc. occasions;(4) poly- isocyanide urea foam plastic is put, heat-resist, can be used continuously at 150 DEG C, flame resistant is had excellent performance, 25mm
Thick plank can be resistant to propane flame and reach 30min.
For another example：Polyethylene【Low-density（LDPE）, middle density（HDPE）, high density（HDPE）, linea low density
（LLDPE）】, polyvinyl chloride（PVC）, crosslinked polyethylene【Peroxide crosslinking material, crosslinked with silicane material, cross-linking radiation material】
（XLPE）, cross-linked polrvinyl chloride（XLPVC）, low-smoke halogen-free polyolefin（DWPJ）, low-smoke low-halogen polyolefin（DDPJ）, nylon PA6,
Nylon PA66, nylon MC, nylon POM, polyformaldehyde PP, polypropylene PTFE, polytetrafluoroethylene (PTFE), PEEK, polyether-ether-ketone, plate stick
PSU, polysulfones, plate stick PEI, polyetherimide PES, polysulfones PVDF, polyvinylidene fluoride PET, PETP, poly terephthalic acid second two
Ester PPO, polyphenylene oxide PPS, polyphenylene sulfide CPVC, chliorinated polyvinyl chloride PMMA, acrylic, ABS, acrylonitrile PBT, poly- terephthaldehyde
Sour butanediol ester PC, makrolon PE, polyethylene PVC, polyvinyl chloride UPE, ultra high molecular polyethylene PAI, polyamidoimide
PI, polyimides PU, polyurethane, poly- terephthalate p-phenylenediamine PFCC, phenolic resin cotton PBI, polybenzimidazoles PLA, polyester
Bakelite, phenolic aldehyde synthesis, carbon fiber, phenolic resin paper substrate enhance PFCP, and phenolic resin cloth base enhances PFCC, and glass epoxy is fine
Dimension enhancing 3240FR4, polyester resin glass fiber enhance SMC, DMC etc., insulating sleeve insulating papers, laminate, rubber, plastics,
Paint, glass, ceramics, mica etc..
For another example：Mineral insulating oil and synthetic insulating oil（Silicone oil, detergent alkylate, polyisobutene, isopropyl biphenyl, two
Aryl-ethane etc.）.
The seal wire of SI semi-insulation of the present invention is conduction of the diameter less than 200 microns, heat conduction seal wire, the portion of insulation
Divide and the tubing that high molecular material is made may be used, can also be coating insulating materials, prepared by preferably insulated paint coating, conduction material
Material can be selected as the metal material of various conductions, such as：Metallic element, alloy（Copper alloy, aluminium alloy etc.）, composition metal
Deng specifically having：Silver（Ag）, copper (Cu), golden (Au), aluminium (Al), receive (Na), molybdenum (Mo), tungsten (W), zinc (Zn), nickel (Ni), iron
(Fe), platinum (Pt), tin (Sn), lead（Pb）Deng.2. alloy, copper alloy has：Silver-bearing copper, cadmium copper, chromium-copper, beryllium copper, zirconium copper etc.；Aluminium alloy
Have：Al-mg-si, magnalium, magnalium iron, aluminium zirconium etc.；Not using conduction as major function, and in electric heating, electromagnetism, electric light, electrochemical effect
Aspect has the conductor material of superperformance, such as：The alloy of the elements such as silver, cadmium, tungsten, platinum, palladium, Aludirome, silicon carbide,
The materials such as graphite.
Optical material of the present invention is selected from silica fibre, fluoride glass fiber, chalcogenide glass fiber, single crystal glass
Optical fiber, photonic crystal fiber, polymethyl methacrylate (PMMA) plastic optical fiber, polystyrene plastics optical fiber, gathers polycrystalline fiber
Carbonic ester plastic optical fiber and heat-resistant plastic optical fiber.
Insulating materials on the seal wire of SI semi-insulation of the present invention can be selected commercially available impregnating varnish, wire enamel, cover
Paint, lamination coating, anticorona varinish etc. are covered, specifically includes organic-silicon-modified three-proofing coating, varnish (has self-drying type, baking-type, without molten
Dosage form) insulated paint, ZS-1091 refractory ceramics coatings, acetal paint, polyurethane paint, solderability polyester-imide paint, polyester
Imines paint, Polyester Paint, polyamidoimide paint, nylon paint, self-adhesion paint（Polyamide, epoxy (phenol oxygen) and aromatic polyamides etc.）、
Alkyd paint, epoxy-based lacquers and organosilicon coating, anticorona varinish, insulating oil（Mineral insulating oil, synthetic insulating oil and vegetable oil）, specific to wrap
Include aromatic hydrocarbons synthetic oil, silicone oil, Esters oil, ethers and sulfone class synthetic oil, polybutene etc.；What vegetable oil used has castor oil, soybean
Oil, rapeseed oil etc., preferably castor oil.
Figure of description
Fig. 1 is the structural schematic diagram that the seal wire of SI semi-insulation in the utility model embodiment is in standby；
Fig. 2 is the in running order structural schematic diagram of the seal wire of SI semi-insulation in the utility model embodiment；
Fig. 3 is the structural schematic diagram of the seal wire of SI semi-insulation in the utility model embodiment.
1, the seal wire of SI semi-insulation；2, hollow metal micropin, 3, energization fixed plate；4, insulating coating；5, micropin fixed plate；
6, resetting spring.
Specific implementation mode
Embodiment one：It is micro- as anti-more hollow metals of safe microneedle array device of burning of energy source with radio frequency and microwave
2 array of needle is fixed in micropin fixed plate 5, and energization fixed plate 3 uses the conductive circuit board of printed on both sides copper, by part
The seal wire 1 of insulation is welded in energization fixed plate 3, and the seal wire 1 of SI semi-insulation penetrates in hollow metal micropin 2, and standby mode is such as
Shown in Fig. 1.
As shown in figure 3, the seal wire 1 of SI semi-insulation is using the copper wire to conduct electricity very well, interlude outer application insulating coating
4, for example polyurethane insulating varnish, hollow metal micropin 2 use specification for 304 stainless pins of 30G.
Energization fixed plate 3 connects microwave or radio frequency emitting devices, mixes up emitted energy, and anti-safe microneedle array of burning is filled
Insertion skin is set, the pushing meanss for pushing energization fixed plate 3 are opened, the conducting end moment of the seal wire 1 of SI semi-insulation is pushed out sky
Heart metal micro-needle 2（As shown in Figure 2）, heat, which is burnt, treats tissue, closes Laser emission energy, and pushing meanss reset, and resetting spring 6 makes
The seal wire 1 of SI semi-insulation retracts in hollow metal micropin 2, extracts anti-safe microneedle array device of burning, completes a fulguration
Treatment, repeatedly.
Embodiment two：With laser as anti-2 gusts of the hollow metal micropin of more of safe microneedle array device of burning of energy source
Column is fixed in micropin fixed plate 5, and energization fixed plate 3 uses the conductive circuit board of printed on both sides copper, by SI semi-insulation
Seal wire 1 be welded in energization fixed plate 3, then penetrate in hollow metal micropin 2, standby mode is as shown in Figure 1.Which part
The seal wire 1 of insulation is exhausted using the fine copper silk to conduct electricity very well, interlude outer application insulating coating 4, such as polymethylacrylic acid
Edge paint, hollow metal micropin 2 use specification for 304 stainless pins of 30G.
Energization fixed plate 3 connects laser transmitting set, mixes up emitted energy, and anti-safe microneedle array device of burning is inserted into
Skin opens the pushing meanss of energization fixed plate 3, and the heat conduction end moment of the seal wire 1 of SI semi-insulation releases hollow metal micropin 2
（As shown in Figure 2）, laser heat, which is burnt, treats tissue, closes laser energy, and pushing meanss reset simultaneously, and resetting spring 6 makes part absolutely
The seal wire 1 of edge retracts in hollow metal micropin 2, extracts anti-safe microneedle array device of burning, and laser heat of completion, which is burnt, to be controlled
It treats, repeatedly.
Embodiment three：With infrared anti-2 gusts of the hollow metal micropin of more of safe microneedle array device of burning as energy source
Column is fixed in micropin fixed plate 5, and energization fixed plate 3 uses the conductive circuit board of printed on both sides copper, by SI semi-insulation
Seal wire 1 be welded in energization fixed plate 3, then penetrate in hollow metal micropin 1, standby mode is as shown in Figure 1.Which part
The seal wire 1 of insulation uses the good optical fiber of guide-lighting performance, interlude outer application insulating coating 4, such as polymethylacrylic acid insulated paint,
Hollow metal micropin 2 uses specification for 304 stainless pins of 30G.
Energization fixed plate 3 connects infrared transmitting set, mixes up emitted energy, and anti-safe microneedle array device of burning is inserted into
Skin opens the pushing meanss of energization fixed plate 3, and the guide-lighting end moment of the seal wire 1 of SI semi-insulation is pushed out hollow metal micropin 2
（As shown in Figure 2）, heat, which is burnt, treats tissue, closes the energy of infrared light supply, pushing meanss reset simultaneously, and resetting spring 6 makes part
The seal wire 1 of insulation retracts in hollow metal micropin 2, extracts energization fixed plate, completes the bright treatment of primary infrared photo-thermal, so anti-
It is multiple.
Claims (5)
1. the anti-safe microneedle array device of burning of one kind, which is characterized in that by hollow metal micropin, be set in hollow metal micropin
SI semi-insulation seal wire and between hollow metal micropin and the seal wire of SI semi-insulation insulation structure composition,
The more hollow metal microneedle array formulas are fixed in micropin fixed plate, and the seal wire of the SI semi-insulation is welded on energization and fixes
On plate, the seal wire of the SI semi-insulation penetrates in hollow metal micropin, is equipped between the micropin fixed plate and energization fixed plate
Resetting spring；
When the anti-safe microneedle array device of burning is in standby, the seal wire of SI semi-insulation is in hollow metal micropin
It is interior, do not expose transmitting terminal；When in emission state, the seal wire of SI semi-insulation is released by propulsion device, transmitting treatment；Stop transmitting
Afterwards, the seal wire transmitting terminal of SI semi-insulation is retracted under the action of resetting spring in hollow metal micropin.
2. anti-safe microneedle array device of burning according to claim 1, which is characterized in that the insulation structure is
It is sleeved on more empty insulated pipes useds on the outside of the seal wire of SI semi-insulation or the heat-insulated painting of porous insulation coated in hollow metal micropin inner wall
Layer.
3. anti-safe microneedle array device of burning according to claim 1 or 2, which is characterized in that the hollow metal is micro-
The diameter of needle is less than 500 microns, and the diameter of the seal wire of the SI semi-insulation is less than 300 microns；
Emitted energy source is radio frequency, microwave or light source.
4. anti-safe microneedle array device of burning according to claim 1 or 2, which is characterized in that the hollow metal is micro-
Porous insulated heat material is coated on the wall surface of needle, the seal wire both ends of the SI semi-insulation are conductive, and rest part is coated with
Nanometer insulating coating.
5. anti-safe microneedle array device of burning according to claim 1, which is characterized in that the hollow metal micropin and
The size of the seal wire of SI semi-insulation is micron order, needs to borrow when the seal wire of the SI semi-insulation is assemblied in hollow metal micropin
Help the close fit device with micro- enlarging function.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621464641.3U CN207679527U (en) | 2016-12-29 | 2016-12-29 | The anti-safe microneedle array device of burning of one kind |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621464641.3U CN207679527U (en) | 2016-12-29 | 2016-12-29 | The anti-safe microneedle array device of burning of one kind |
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| CN207679527U true CN207679527U (en) | 2018-08-03 |
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| CN201621464641.3U Active CN207679527U (en) | 2016-12-29 | 2016-12-29 | The anti-safe microneedle array device of burning of one kind |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114209976A (en) * | 2021-12-17 | 2022-03-22 | 北京理工大学 | Soluble micro-needle photodynamic therapy device |
-
2016
- 2016-12-29 CN CN201621464641.3U patent/CN207679527U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114209976A (en) * | 2021-12-17 | 2022-03-22 | 北京理工大学 | Soluble micro-needle photodynamic therapy device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200515 Address after: 214000 No. 35 Changjiang Road, new Wu District, Wuxi, Jiangsu Patentee after: Xinnajing Wuxi Biotechnology Co., Ltd Address before: 211106, No. 37, general road, Jiangning economic and Technological Development Zone, Nanjing, Jiangsu Patentee before: KAISIDI NANJING MEDICAL EQUIPMENT Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211217 Address after: 215000 room 131, building 3, No. 368, Linquan street, Suzhou Industrial Park, Jiangsu Province Patentee after: Zhang Wenfang Address before: 214000 Changjiang South Road, new Wu District, Wuxi, Jiangsu Province, No. 35 Patentee before: Xinnajing Wuxi Biotechnology Co.,Ltd. |
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| TR01 | Transfer of patent right |