CN207676909U - High-voltage bidirectional thyristor - Google Patents

Abstract

The entitled high-voltage bidirectional thyristor and its manufacturing method of the utility model.Belong to power semiconductor device technology field.The shortcomings of it connects after mainly solving existing high-pressure thyristor inverse parallel, and structural member is more, complicated.It is mainly characterized by：The semiconductor chip is four end P⁺N⁺PP^‑N^‑P^‑PN⁺P⁺Nine layers of structure, four terminals are respectively the poles T1, top gate pole, the poles T2 and lower part gate pole, are 2 thyristor inverse parallels；Anti-parallel thyristor is isolated in central door extremely positive-negative-positive structure；Thyristor device is positive, reverse BV can reach 6500V or more, by controlling the controllable double piezocrystal brake tubes forward directions of signal, reverse-conducting；It is equipped with the separation layer of low doping concentration between anti-parallel thyristor, reduces influencing each other for anti-parallel thyristor.With the pressure resistance that can significantly improve bidirectional thyristor device, and simple, easy-to-use, technique simplifies feature, simplifies structure and improves functional reliability.It is mainly used in AC Motor Control, high-voltage explosion-proof soft starter.

Description

High-voltage bidirectional thyristor

Technical field

The utility model belongs to power semiconductor device technology field.More particularly to a kind of high pressure 6500V with semiconductor-on-insulator Bidirection switching device is mainly used in high-voltage AC motor control, high-voltage explosion-proof soft starter.

Background technology

Currently, semiconductor devices used in high-voltage AC motor control, high-voltage explosion-proof soft strater is high-pressure thyristor, by anti- High-pressure thyristor in parallel is composed in series valve group, the trigger signal control exchange output that reception control unit is sent out, typical valve Group is as shown in fig. 6, increase the complexity of device.And scheme that is more simplified, stablizing is that anti-high-pressure thyristor is integrated in Single device（BCT）, valve group is more simplified, control is more convenient, and typical circuit subtracts as shown in fig. 7, make full use of the accessories such as radiator Few periphery resistance capaciting absorpting circuit and space hold.

Conventional low voltage bidirectional thyristor is a kind of N⁺PNPN⁺Five layer of three end center gate pole structure devices, not with triode thyristor With there are four pn-junctions for low pressure bidirectional thyristor, and using junction type gate structure, gate pole contact not only has p-type layer below, simultaneously The polarity of also n-layer, gate pole can just be born, to open two antiparallel thyristors；It is a kind of communication elements, volt Pacify characteristic be symmetrical, can be connected in first quartile and third quadrant, while gate pole can just be born, usual manufacturing method be N-type silicon chip both ends directly carry out p-type diffusion, form symmetrical positive-negative-positive structure, and the areas p1 are then thinned to increase the triggering of third quadrant Sensitivity carries out N-type in the areas cathode terminal P right half or left-half and selectively spreads, ultimately forms PNPN structures；In anode tap P Area left half or right half part carry out N-type and selectively spread, and form NPNP structures, often the blocking voltage of forward and reverse thyristor, logical State pressure drop has differences, and such structure bidirectional thyristor device routine blocking voltage can not in 600V~1800V by this technique It realizes more high voltage and dynamic characteristic deteriorates, do not have feasibility.Traditional handicraft has not had the two-way brilliant locks of 2500V or more Tube device practicability.

Invention content

The purpose of this utility model provides a kind of high-voltage bidirectional can be applied to 2500V or more aiming at above-mentioned deficiency Thyristor device（BCT）, i.e. high-voltage bidirectional thyristor and its manufacturing method.The pressure resistance of device can be significantly improved, that is, keeps original to set The inverse parallel characteristic of thyristor is counted, and simple, easy-to-use, technique simplifies feature, so as to improve the blocking voltage level of device and logical State ability simplifies structure and improves functional reliability.

The technical solution of the utility model high-voltage bidirectional thyristor is：A kind of high-voltage bidirectional thyristor, by under shell Closure, lower gate pole component, lower gasket, semiconductor chip, Upper gasket, upper gate pole component and upper closure encapsulate, special Sign is：The semiconductor chip is four end P⁺N⁺PP^-N^-P^-PN⁺P⁺Nine layers of structure, including the poles T1, top gate pole, the poles T2 and under The terminal of department pole four；The left-half of the semiconductor chip, sequentially consists of P⁺N⁺PP^-N^-P^-PP⁺Eight layers of structure, Lower part is thyristor cathode, and top is thyristor anode；The right half part of semiconductor chip, sequentially consists of P⁺PP^-N^-P^- P N⁺P⁺Eight layers of structure, lower part is thyristor anode, top is thyristor cathode；Brilliant lock is integrally formed in the left and right of semiconductor chip The inverse parallel structure of pipe；Top gate pole, lower part gate pole center gate pole form positive-negative-positive structure, to anti-parallel thyristor carry out every From；The monocrystalline brake tube P of the semiconductor chip left-half⁺N⁺PP^-N^-P^-PP⁺Structure is respectively anode emitter P⁺Layer, sun High concentration P1 layers, anode low concentration P1^-Layer, base area N1, cathode low concentration P2^-Layer, P2 layers of cathode high concentration, cathode current collector N⁺Layer and cathode short circuit P⁺Layer；Low doping concentration is equipped between the top gate pole and top anode or lower part gate pole and lower anode Separation layer, reduce interference and influence that positive anti-parallel thyristor is opened, turned off；The cathode high concentration P2 layer surfaces are equipped with Cathode current collector N⁺The center gate pole P of layer, top gate pole⁺Layer, amplifier gates P⁺Area, cathode shorting region P⁺Layer.

The left-half of semiconductor chip described in the technical solution of the utility model high-voltage bidirectional thyristor with Right half part is using vertical center line as boundary；The right half part structure of semiconductor chip surrounds core with left-half thyristor structure Piece central point O rotates 180 °, forms the inverse parallel structure of thyristor, and vertical center line both sides are positive-negative-positive structure centre gate pole area Domain, and anti-parallel thyristor is isolated；The impurity concentration of P2 layers of P1 layers of the anode high concentration and cathode high concentration point Cloth radially changes, and is low concentration impurity in knot termination environment.

Anode emitter P described in the technical solution of the utility model high-voltage bidirectional thyristor⁺Layer, cathode short circuit Area P⁺Layer surface impurity concentration is 0.8~4.5 × 10²⁰/cm³, junction depth is 8~16 μm or 16~22 μm；P1 layers of anode high concentration, Cathode high concentration P2 layer surface impurity concentrations are 0.5~1.2 × 10¹⁸/cm³, junction depth is 32~45 μm or 45~60 μm；Anode is low Concentration P1^-Layer, cathode low concentration P2^-Layer surface impurity concentration is 0.3~3.0 × 10¹⁶/cm³, junction depth is 90~120 μm or 120 ~145 μm；Cathode current collector N⁺Layer surface impurity concentration is 0.9~6.5 × 10²⁰/cm³Or 4.0~9.0 × 10¹⁹/cm³, junction depth It is 10~16 μm or 16~25 μm.

The width of the separation layer of low doping concentration described in the technical solution of the utility model high-voltage bidirectional thyristor Degree is 2.2~3.0 times of base area N1 thickness.

Semiconductor chip described in the technical solution of the utility model high-voltage bidirectional thyristor and lower gasket low temperature After welding, it is assembled with Upper gasket.

Lower gasket, Upper gasket material described in the technical solution of the utility model high-voltage bidirectional thyristor be molybdenum, Silver, copper or its wantonly 2 kinds of combination, ruthenium, rhodanizing or not coating are plated in surface.

Semiconductor chip table top described in the technical solution of the utility model high-voltage bidirectional thyristor is double negative angles Table top moulding or double positive angle table top modeling structures, angular dimension is 30o~80o when orthogonal rake, and angular dimension is 1.2 when negative bevel O~4.5o and 20o~45o.

Semiconductor chip surface evaporation metal described in the technical solution of the utility model high-voltage bidirectional thyristor Conductive layer, conductive layer thickness are 8~15 or 15~30 μm, and chip double-side conductive layer selective etch is formed in the gate pole of top Ostium pole, the center gate pole of lower part gate pole, top amplifier gates, lower part amplifier gates, upper cathodic, lower cathodic, top sun Pole and lower anode, coplanar anode and cathode metal conducting layer consistency of thickness and be connected, led than center gate pole, amplifier gates metal Electric layer thickness >=10 μm.

By technical solution described in high-voltage bidirectional thyristor embodiment, following technique effect can reach：

1, using single BCT device, two antiparallel thyristors are integrated with, parts number is than using thyristor inverse parallel 50% is reduced, the ability of radiator can be given full play to, has the characteristics that device is compact, small, weight saving.Two crystalline substances simultaneously Brake tube inverse parallel is combined, and lead inductance is reduced, and simplifies resistance capaciting absorpting circuit；

2, using crimping structure, forward and reverse voltage blocking capability, anode while the short-circuit structure as cathode, drop are improved Low positive a2 improves the reliability of device voltage blocking, and the forward and reverse blocking voltage of thyristor of the utility model structure can Reach 6500V or more；

3, when device T1 extremely adds forward voltage to T2 interpolars, gate pole G1 and T1 applies smaller trigger current between pole （Usual 50mA ~ 1000mA）, the areas A1 thyristor is open-minded, the areas A2 transistor blocking；In device T2 extremely to T1 interpolars plus positive electricity When pressure, apply smaller trigger current between the poles gate pole G2 and T2, the areas A2 thyristor is open-minded, the areas A1 transistor blocking；Pass through control Signal between G and T processed can control the forward and reverse conducting of double piezocrystal brake tubes.

The utility model integrates two inverse parallel high-pressure thyristors, using crimping encapsulation technology, reduces device pressure drop, carries The uniformity and consistency of parameter between high device, improve the concatenated consistency of high tension apparatus.The utility model is mainly used in The devices such as AC Motor Control, high-voltage explosion-proof soft strater power supply.

Description of the drawings

Illustrate technical solutions of the utility model to become apparent from, attached drawing needed in embodiment description is made below Briefly introduce.Obviously, drawings discussed below is only some embodiments of the utility model.

Fig. 1 is the utility model product structure schematic diagram.

Fig. 2 is the utility model chip vertical structure and double negative angle table top moulding schematic diagrames.

Fig. 3 is the low-doped chip vertical structure of the utility model knot terminal and double negative angle table top moulding schematic diagrames.

Fig. 4 is the double positive angle table top moulding schematic diagrames of the utility model chip.

Fig. 5 is the double positive angle table top moulding schematic diagrames of the low-doped chip of the utility model knot terminal.

Fig. 6 is former scheme product valve body structure schematic diagram.

Fig. 7 is the utility model product valve body structure schematic diagram.

Fig. 8 is low pressure bidirectional thyristor chip vertical structure schematic diagram.

In figure：1. closure under shell；2. lower gasket；3. injecting glue ring；4. semiconductor chip；5. Upper gasket；On 6. Closure；Gate pole component on 7.；7. lower gate pole component；T1. the poles T1；T2. the poles T2, the tops G1. gate pole；G2. lower gate Pole；A1- lower anodes, K1- upper cathodics, the tops G1 '-amplifier gates, the tops A2- anode, K2- lower cathodics, the lower parts G2 '- Amplifier gates；12. Chip Vertical center line；41. anode emitter P⁺Layer；42. P1 layers of anode high concentration；43. anode is low Concentration P1^-Layer；44. base area N1；45. cathode low concentration P2^-Layer；46. P2 layers of cathode high concentration；47. cathode current collector N⁺ Layer；48. amplifier gates P⁺Area；49. cathode shorting region P⁺Layer；50. the separation layer of low doping concentration；51. knot termination environment.

Specific implementation mode

The following will be combined with the drawings in the embodiments of the present invention, is fully described by the utility model embodiment. Obviously, described embodiment is only a part of the embodiment of the utility model, instead of all the embodiments.It is any to be based on The embodiments of the present invention, those skilled in the art are obtained all other without making creative work Embodiment shall fall within the protection scope of the present invention.

Embodiment 1 is as shown in Fig. 2, Fig. 4, Fig. 1, by the high-voltage bidirectional thyristor that 6500V is designed, Chip scale Φ 50mm. By closure under shell 1, lower gate pole component 7, lower gasket 2, semiconductor chip 4, Upper gasket 5, upper gate pole component 7 and upper closure 6 encapsulate.Semiconductor chip 4 is four end P⁺N⁺PP^-N^-P^-PN⁺P⁺Nine layers of structure, four terminals are respectively the poles T1, top gate pole The pole G1, T2 and lower part gate pole G2.The left-half of semiconductor chip 4, sequentially consists of P⁺N⁺PP^-N^-P^-PP⁺Eight layers of structure, Lower part is thyristor cathode, and top is thyristor anode, and the right half part of semiconductor chip 4 sequentially consists of P⁺PP^-N^- P^-P N⁺P⁺Eight layers of structure, lower part is thyristor anode, top is thyristor cathode.Crystalline substance is integrally formed in the left and right of semiconductor chip 4 The inverse parallel structure of brake tube.The center gate pole formation positive-negative-positive structure of top gate pole G1, lower part gate pole G2, to anti-parallel thyristor It is isolated.The monocrystalline brake tube P of 4 left-half of semiconductor chip⁺N⁺PP^-N^-P^-PP⁺Structure is respectively anode emitter P⁺Layer 41, Anode high concentration P1 layers 42, anode low concentration P1^-Layer 43, base area N1 (44), cathode low concentration P2^-Layer 45, P2 layers of cathode high concentration 46, cathode current collector N⁺47 and cathode shorting region P of layer⁺Layer 49, the forward and reverse blocking voltage of thyristor device can reach 6500V or more, When device T1 extremely adds forward voltage to T2 interpolars, top applies smaller trigger current between the poles gate pole G1 and T1（Usually 50mA~1000mA）, the areas lower anode A1 thyristor is open-minded, 2 area's transistor blocking of top anode A.In device T2 extremely to T1 interpolars In addition when forward voltage, applying smaller trigger current between the poles gate pole G2 and T2 of lower part, anode A 2 area's thyristor in top is open-minded, The areas lower anode A1 transistor blocking.By controlling the signal between G and T, the forward and reverse conducting of double piezocrystal brake tubes can control.Top It is equipped with the separation layer 50 of low doping concentration between gate pole G1 and top anode A 2 or lower part gate pole G2 and lower anode G1, reduces positive and negative The interference and influence that parallel thyristors are opened, turned off.46 surface of cathode high concentration P2 layers is equipped with cathode current collector N⁺Layer 47, top The center gate pole P of gate pole G1⁺Layer, amplifier gates P⁺Area 48, cathode shorting region P⁺Layer 49.Main technological steps are as follows.

Silicon single crystal selects N-type<100>Or<111>Crystal orientation NTD materials, n type single crystal silicon piece, resistivity are 340~420 Ω Cm, about 1280 μm of thickness.Silicon chip is two-sided to be handled using chemical attack or phosphorus absorption technique.

The two-sided Al impurity low concentration distribution of silicon chip is spread and is aoxidized, and anode P1 is formed^-Area, cathode P2^-Area.Anode P1^-Area with Cathode P2^-The junction depth in area is 80~110 μm or 110~140 μm, and surface impurity concentration is 0.3~3.0 × 10¹⁶/cm³。

The two-sided Al or Ga high concentrations distribution of silicon chip or selectivity diffusion, form the areas anode P1, the areas cathode P2.The areas anode P1 with The junction depth in the areas cathode P2 is 30~42 μm or 42~55 μm, and surface impurity concentration is 0.5~1.2 × 10¹⁸/cm³.Low doping concentration The width of separation layer 50 be 2.2~3.0 times of 44 thickness of base area N1.

Silicon chip anode high concentration P1 layers 42, cathode high concentration P2 layers 46 and anode low concentration P1^-Layer 43, cathode low concentration P2^- Al diffusions synchronous with the bis- impurity of Ga can also be used in layer 45, are formed when using the diffusion coefficient difference of double impurity, same diffusion time Forward position low concentration, the Impurity Distribution of high surface levels and junction depth.

Selectivity phosphorus diffusion is carried out below silicon chip left-half and on the short base area P2 layers of cathode of the upper surface of right half part And aoxidize, form cathode N⁺Area, cathode N⁺Area's surface impurity concentration is 0.4~7.0 × 10²⁰/cm³, cathode N⁺Area's junction depth be 10~ 20μm。

The two-sided surface high selectivity concentration boron of silicon chip absorbs diffusion.The areas anode P1 and cathode N⁺Shape after layer shorting region boron diffusion At anode P⁺Layer and cathode P⁺Layer, anode P⁺Layer and cathode P⁺Layer junction depth is 8~22 μm, anode P⁺Layer and cathode P⁺The surface of layer is miscellaneous Matter a concentration of 0.8~4.5 × 10²⁰/cm³.Anode P⁺Layer and cathode P⁺Layer is diffuseed to form using spray boron or painting boron.Its process conditions For：

It is the alcohol or latex source saturated solution of boron oxide, the two-sided use of silicon chip 1. boron source uses alcohol source or latex source Spray applies boron source, constant surface source method of diffusion；

2. propulsioning condition：1180~1200 DEG C, N2=6L/ min, O2=0.5L/ min, 100~200min of time.

The surface impurity concentration and junction depth of each processing step form following parameter knot after the diffusion of process later promotes The semiconductor chip of structure：Anode emitter P⁺Layer 41, cathode shorting region P⁺49 surface impurity concentration of layer are 0.8~4.5 × 10²⁰/ cm³, junction depth is 8~16 μm or 16~22 μm；Anode high concentration P1 layers 42,46 surface impurity concentration of cathode high concentration P2 layers are 0.5~1.2 × 10¹⁸/cm³, junction depth is 32~45 μm or 45~60 μm；Anode low concentration P1^-Layer 43, cathode low concentration P2^-Layer 45 Surface impurity concentration is 0.3~3.0 × 10¹⁶/cm³, junction depth is 90~120 μm or 120~145 μm；Cathode current collector N⁺Layer 47 Surface impurity concentration is 0.9~6.5 × 10²⁰/cm³Or 4.0~9.0 × 10¹⁹/cm³, junction depth is 10~16 μm or 16~25 μm.

Silicon chip surface evaporation metal conductive layer, conductive layer thickness are 8~15 μm or 15~30 μm.To the two-sided conductive layer of silicon chip Carry out selective etch, formed the center gate pole of top gate pole G1, the center gate pole of lower part gate pole G2, top amplifier gates G1 ', Lower part amplifier gates G2 ', upper cathodic K1, lower cathodic K2, top anode A 1 and lower anode A2.Wherein with surface anode and the moon Pole metal conducting layer consistency of thickness and be connected, than center gate pole, amplifier gates metallic conduction thickness >=10 μm.

Table top moulding, chip table are double negative angle table top moulding, and negative angle angular dimension is：1.2o~4.5o and 20o~45 º。

Then table top chemical attack carries out mesa edge surface passivation and gluing protection, forms injecting glue ring 3.Obtain semiconductor Chip 4.

The left-half of semiconductor chip 4 is boundary with vertical center line 12 with right half part.The right side of semiconductor chip 4 Separation structure rotates 180 ° around chip center point O with left-half thyristor structure, forms the inverse parallel structure of thyristor, hangs down Straight 12 both sides of center line are positive-negative-positive structure centre gate region, and anti-parallel thyristor is isolated.

By closure 1 under semiconductor chip 4 and shell, lower gate pole component 7, lower gasket 2, Upper gasket 5, upper gate pole component 7, Upper closure 6 encapsulates.

Embodiment 2 as shown in figure 3, difference from example 1 is that, anode high concentration P1 layers 42 and cathode high concentration The impurities concentration distribution of P2 layers 46 radially changes, and is low concentration impurity in knot termination environment 51.This design is ensureing voltage characteristic On the basis of be thinned silicon wafer thickness or reach higher voltage with silicon wafer thickness, further reduce device pressure drop.

Embodiment 3 as shown in figure 4, difference from example 1 is that, chip table modeling structure is that double positive angles are made Type：Angular dimension is when orthogonal rake：Chip cathode area can be improved in 30o~80o.This embodiment product cathode area loses most It is small, it is suitable for the bidirectional thyristor device with diameter more high current.

Embodiment 4 is as shown in figure 5, the difference is that, chip table modeling structure is that double positive angles are made with embodiment 2 Type：Angular dimension is when orthogonal rake：Chip cathode area and thinned silicon wafer thickness can be improved in 30o~80o.This embodiment product Cathode area loss reduction is thinned silicon wafer thickness on the basis of ensureing voltage characteristic or can reach higher electricity with silicon wafer thickness Pressure, further reduces device pressure drop and improves the through-current capability of bidirectional thyristor.

Embodiment 5, with embodiment 1 and embodiment 2 the difference is that, 2 low-temperature welding of semiconductor chip 4 and lower gasket Afterwards, it is assembled with Upper gasket 5, chip table is positive negative angle table top moulding.The present embodiment product, to major diameter chip, because having Lower gasket supports, it is ensured that chip is not easily broken, convenient for assembly.

A kind of specific implementation mode of the present invention is that the separation layer 50 of low doping concentration is equipped between gate pole and anode, low-doped The width of the separation layer 50 of concentration is 2.2~3.0 times of 44 thickness of base area N1.The width and doping concentration of separation layer can improve The voltage commutation blocking ability of forward and reverse thyristor.

A kind of specific implementation mode of the present invention is, lower gasket 2,5 material of Upper gasket be molybdenum or aluminium or silver or copper or Its it is wantonly 2 kinds combination, surface can single or double coating, coating be plating ruthenium or rhodanizing, chip contact, can reduce with gasket plating level Contact drop improves reliability.

As the present invention provides a kind of specific implementation modes of high-voltage bidirectional thyristor fabrication method, in obtained semiconductor After chip 4, before encapsulation, use the method for electron irradiation or proton irradiation control chip minority carrier life time, recovery charge for required value. It can control and reduce influencing each other for positive and negative thyristor.

By technical solution described in high-voltage bidirectional thyristor embodiment, following technique effect can reach：

1, using BCT devices, two antiparallel thyristors are integrated with, parts number is reduced than using anti-parallel thyristor 50%, the ability of radiator can be given full play to, has the characteristics that the tight farmland of device, volume reduction, weight saving.Simultaneously using two-way Thyristor reduces lead inductance and simplifies resistance capaciting absorpting circuit.

2, using crimping structure, forward and reverse voltage blocking capability, anode while the short-circuit structure as cathode, drop are improved Low positive a2, improves the reliability of device voltage blocking, and the forward and reverse blocking voltage of thyristor of product of the present invention can reach 6500V or more.

3, high concentration P1 layers 42 and P2 layers 46, impurities concentration distribution radially changes when diffusion, in knot termination environment 51) and every Absciss layer 50 is low concentration impurity, that is, reduces forward and reverse influence of thyristor, also reduce table top electric field, improve voltage block energy Power.

4, in device T1 between T2 add forward voltage when, apply between gate pole G1 and T1 smaller trigger current (usual 50 ~ 1000mA), the areas A1 thyristor is open-minded, the areas A2 transistor blocking；When device T2 adds forward voltage between T1, between gate pole G2 and T2 Apply smaller trigger current, the areas A2 thyristor is open-minded, the areas A1 transistor blocking；Signal between the corresponding G and T of control, can control Double forward and reverse conductings of piezocrystal brake tube.

5, the boron diffusion technique condition after optimizing, reduces P⁺To N when diffusion⁺The impurity concentration of layer influences.

6, semiconductor chip diameter of the present invention can be 38~Φ of Φ 150,2500~8500V of blocking voltage, mean on-state electricity Flow I_T(AV)For 400A~4000A.

The above is only presently preferred embodiments of the present invention, is not intended to limit the present invention in any form.Therefore all Be without departing from present disclosure, according to the technical essence of the invention any modification made to the above embodiment, equivalent replacement, Equivalence changes and modification still fall within the range of technical solution of the present invention protection.

Claims (8)

1. a kind of high-voltage bidirectional thyristor, by closure under shell（1）, lower gate pole component（7）, lower gasket（2）, semiconductor chip （4）, Upper gasket（5）, upper gate pole component（7）With upper closure（6）It encapsulates, it is characterised in that：The semiconductor chip（4） For four end P⁺N⁺PP^-N^-P^-PN⁺P⁺Nine layers of structure, including the poles T1, top gate pole（G1）, the poles T2 and lower part gate pole（G2）Four ends Son；The semiconductor chip（4）Left-half, sequentially consist of P⁺N⁺PP^-N^-P^-PP⁺Eight layers of structure, lower part are crystalline substance Brake tube cathode, top are thyristor anode；Semiconductor chip（4）Right half part, sequentially consist of P⁺PP^-N^-P^-P N⁺P⁺ Eight layers of structure, lower part is thyristor anode, top is thyristor cathode；Semiconductor chip（4）Left and right thyristor is integrally formed Inverse parallel structure；Top gate pole（G1）, lower part gate pole（G2）Center gate pole form positive-negative-positive structure, to anti-parallel thyristor It is isolated；The semiconductor chip（4）The monocrystalline brake tube P of left-half⁺N⁺PP^-N^-P^-PP⁺Structure is respectively anode transmitting Pole P⁺Layer（41）, P1 layers of anode high concentration（42）, anode low concentration P1^-Layer（43）, base area N1（44）, cathode low concentration P2^-Layer （45）, P2 layers of cathode high concentration（46）, cathode current collector N⁺Layer（47）With cathode shorting region P⁺Layer（49）；The top gate pole （G1）With top anode（A2）Or lower part gate pole（G2）With lower anode（G1）Between be equipped with low doping concentration separation layer（50）, subtract The interference and influence that small positive anti-parallel thyristor is opened, turned off；P2 layers of the cathode high concentration（46）Surface is equipped with cathode collection Electrode N⁺Layer（47）, top gate pole（G1）Center gate pole P⁺Layer, amplifier gates P⁺Area（48）, cathode shorting region P⁺Layer（49）.

2. high-voltage bidirectional thyristor according to claim 1, it is characterised in that：The semiconductor chip（4）Left half Part is with right half part with vertical center line（12）For boundary；Semiconductor chip（4）Right half part structure, with left-half crystalline substance lock Pipe structure rotates 180 ° around chip center point O, forms the inverse parallel structure of thyristor, vertical center line（12）Both sides are PNP Type structure centre gate region, and anti-parallel thyristor is isolated；P1 layers of the anode high concentration（42）With cathode height P2 layers of concentration（46）Impurities concentration distribution radially change, in knot termination environment（51）For low concentration impurity.

3. high-voltage bidirectional thyristor according to claim 1 or 2, it is characterised in that：The anode emitter P⁺Layer （41）, cathode shorting region P⁺Layer（49）Surface impurity concentration is 0.8~4.5 × 10²⁰/cm³, junction depth is 8~16 μm or 16~22 μ m；P1 layers of anode high concentration（42）, P2 layers of cathode high concentration（46）Surface impurity concentration is 0.5~1.2 × 10¹⁸/cm³, junction depth is 32~45 μm or 45~60 μm；Anode low concentration P1^-Layer（43）, cathode low concentration P2^-Layer（45）Surface impurity concentration be 0.3~ 3.0×10¹⁶/cm³, junction depth is 90~120 μm or 120~145 μm；Cathode current collector N⁺Layer（47）Surface impurity concentration is 0.9 ~6.5 × 10²⁰/cm³Or 4.0~9.0 × 10¹⁹/cm³, junction depth is 10~16 μm or 16~25 μm.

4. high-voltage bidirectional thyristor according to claim 1 or 2, it is characterised in that：The isolation of the low doping concentration Layer（50）Width be base area N1（44）2.2~3.0 times of thickness.

5. high-voltage bidirectional thyristor according to claim 1 or 2, it is characterised in that：The semiconductor chip（4）With under Gasket（2）After low-temperature welding, with Upper gasket（5）It is assembled.

6. high-voltage bidirectional thyristor according to claim 1 or 2, it is characterised in that：The lower gasket（2）, Upper gasket （5）Material is molybdenum, silver, copper or its wantonly 2 kinds of combination, and ruthenium, rhodanizing or not coating are plated in surface.

7. high-voltage bidirectional thyristor according to claim 1 or 2, it is characterised in that：The semiconductor chip table top is Double negative angle table top moulding or double positive angle table top modeling structures, angular dimension is when orthogonal rake：30o~80o, angle is big when negative bevel Small is 1.2o~4.5o and 20o~45o.

8. high-voltage bidirectional thyristor according to claim 1 or 2, it is characterised in that：The semiconductor chip（4）Surface Evaporation metal conductive layer, conductive layer thickness are 8~15 or 15~30 μm, and the two-sided conductive layer selective etch of silicon chip forms top Gate pole（G1）Center gate pole, lower part gate pole（G2）Center gate pole, top amplifier gates（G1’）, lower part amplifier gates （G2’）, upper cathodic（K1）, lower cathodic（K2）, top anode（A1）And lower anode（A2）, coplanar anode and cathode metal Conductive layer thickness is consistent and connected, than center gate pole, amplifier gates metallic conduction thickness >=10 μm.