CN207664032U

CN207664032U - Difunctional consersion unit

Info

Publication number: CN207664032U
Application number: CN201721907289.0U
Authority: CN
Inventors: 不公告发明人
Original assignee: Individual
Current assignee: Chu Yun Precision Technology Shanghai Co ltd
Priority date: 2017-12-29
Filing date: 2017-12-29
Publication date: 2018-07-27
Anticipated expiration: 2027-12-29

Abstract

The utility model provides a kind of difunctional consersion unit, including：Difunctional reacting furnace, air source cabinet and exhaust gas cabinet；Wherein, difunctional reacting furnace is used for the growth of pending substrate surface material layer and etching, the difunctional reacting furnace include：For place the boiler tube of pending substrate, furnace body, heating device, be connected inside the boiler tube, and for being passed through the air inlet assembly of growth gasses or etching gas into the boiler tube, exhaust outlet, being used to that the boiler tube to be connected to or is isolated with outside, and fire door component, air supply system and the exhaust system of the pending substrate are transferred into and out into the boiler tube.The utility model can be in pending substrate surface growth material layer, and can be performed etching to material layer existing for pending substrate surface, has and grows and etch dual function；The handling of pending substrate under high temperature may be implemented in fire door component in the difunctional reacting furnace of the utility model, without being down to room temperature after being disposed, to significantly improve it using effect.

Description

Dual-function reaction device

Technical Field

The utility model relates to a reaction equipment technical field especially relates to a difunctional reaction equipment.

Background

The currently used thin film growth equipment includes MOCVD, PECVD, tube furnace and the like. The MOCVD and PECVD equipment is expensive, high in maintenance cost, complex in process and low in production efficiency. The tube furnace has low equipment cost, can simultaneously contain batch reactants for reaction at one time, but is limited by equipment process conditions, has narrow application range and is limited to film growth or annealing under specific atmosphere conditions.

Current tube furnace equipment is generally only capable of supporting material layer growth reactions at the reactant surfaces, but is not capable of supporting etching reactions that remove material layers from the reactant surfaces because the equipment components are generally not capable of operating in high temperature, corrosive environments. The problems of expensive equipment and high maintenance cost exist in the conventional plasma dry etching or wet etching.

In addition, the reaction of the tube furnace equipment is generally carried out at a high temperature, so that after the reaction process is finished, the interior of the equipment is still in a high-temperature state, the heating system needs to be closed, reactants can be unloaded after the temperature of the furnace body is reduced to the room temperature, and the next batch of reactants is loaded for reaction, which also affects the utilization efficiency of the equipment.

Therefore, there is a need for a new reactor apparatus that solves the above problems.

SUMMERY OF THE UTILITY MODEL

In view of the above-mentioned shortcomings of the prior art, the present invention provides a dual-function reaction apparatus for solving the problems of single function and low utilization efficiency of the tube furnace apparatus in the prior art.

To achieve the above and other related objects, the present invention provides a dual function reaction apparatus, comprising: the double-function reaction furnace, the gas source cabinet and the exhaust cabinet; wherein,

the double-function reaction furnace is used for growing and etching a surface material layer of a substrate to be processed, and comprises:

a furnace tube for placing a substrate to be processed;

the furnace body is positioned at the periphery of the furnace tube;

the heating device is positioned in the furnace body and positioned at the periphery of the furnace tube;

the gas inlet component is communicated with the interior of the furnace tube and is used for introducing growth gas or etching gas into the furnace tube;

the exhaust port is communicated with the interior of the furnace tube;

the furnace door assembly is used for communicating or isolating the furnace tube with the outside and transmitting the substrate to be treated into or out of the furnace tube, and is positioned at least one end part of the furnace tube;

the gas supply system is positioned in the gas source cabinet and comprises a gas inlet pipeline and a gas supply source, the gas supply source is used for providing the growth gas or the etching gas, one end of the gas inlet pipeline is connected with the gas inlet component, and the other end of the gas inlet pipeline is connected with the gas supply source;

the exhaust system is positioned in the exhaust cabinet and comprises an exhaust pipeline and a power pump, one end of the exhaust pipeline is connected with the exhaust port, and the other end of the exhaust pipeline is connected with the power pump;

the top of the air source cabinet is provided with a first air outlet, a first air volume adjusting plate is also arranged in the air source cabinet, and the first air volume adjusting plate is arranged at the first air outlet;

the top of the exhaust cabinet is provided with a second air outlet, a second air adjusting plate is further arranged in the exhaust cabinet, and the second air adjusting plate is arranged at the second air outlet.

Preferably, the air intake assembly comprises:

the first gas inlet is communicated with the interior of the furnace tube and is used for introducing growth gas or growth liquid into the furnace tube;

and the second gas inlet is communicated with the interior of the furnace tube and is used for introducing etching gas or etching liquid into the furnace tube.

Preferably, the air intake assembly comprises:

the first gas inlet is communicated with the interior of the furnace tube and is used for introducing growth gas into the furnace tube;

the second air inlet is communicated with the interior of the furnace tube and is used for introducing growth liquid into the furnace tube;

a third gas inlet communicated with the interior of the furnace tube and used for introducing etching gas into the furnace tube;

and the fourth air inlet is communicated with the interior of the furnace tube and is used for introducing etching liquid into the furnace tube.

Preferably, the dual function reaction furnace further comprises a cooling device, the cooling device comprising:

the cooling pipeline is positioned at the periphery of the heating device and has a distance with the heating device;

and the refrigerant source is communicated with the cooling pipeline.

Preferably, the dual-function reaction furnace is a horizontal tubular furnace. The oven door assembly includes:

the loading and unloading conveying device comprises a slide rail and a bearing platform for placing the wafer to be processed, and the slide rail is positioned on the outer side of one end of the furnace tube; the bearing table is positioned on the slide rail and can slide on the slide rail;

the furnace door is fixed on one side, far away from the furnace tube, of the bearing platform, and the distance from the furnace door to the side, close to the furnace tube, of the bearing platform is smaller than the length of the furnace tube, so that the furnace door can isolate the furnace tube from the outside when the bearing platform moves into the furnace tube.

Preferably, the dual function reaction furnace is a vertical tube furnace, and the furnace door assembly comprises:

the furnace tube is communicated with the outside when the furnace door is opened, and the furnace tube is isolated from the outside when the furnace door is closed;

and the loading and unloading conveying device is used for conveying the substrate to be treated into the furnace tube and conveying the treated substrate out of the furnace tube, and the loading and unloading conveying device is positioned on one side of the furnace door.

Preferably, the handling conveyor comprises at least one of a rectangular coordinate robot, a spherical coordinate robot, an articulated robot, or a cylindrical coordinate robot.

Preferably, the oven door assembly further comprises:

the flange is positioned between the furnace door and the furnace body and is sleeved on the periphery of one end of the furnace tube close to the furnace door;

and the sealing ring is positioned between the flange and the furnace door.

Preferably, the heating device surrounds the furnace tube in multiple sections to divide the furnace tube into multiple heating zones.

Preferably, the furnace tube comprises a constant temperature area, and the length of the constant temperature area accounts for 1/3-1 of the total length of the furnace tube.

Preferably, the exhaust system further comprises:

the tail gas treatment device is connected with the power pump through a pipeline;

and the filtering device is positioned on the exhaust pipeline.

Preferably, the bifunctional reaction apparatus further comprises: and the control device is used for controlling the operation of the reaction furnace, the gas supply system and the exhaust system.

Preferably, the bifunctional reaction apparatus further comprises:

the control device is positioned in the control cabinet;

the furnace body, the furnace tube and the furnace door assembly are all positioned in the reaction cabinet; the gas source cabinet is positioned on one side of the reaction cabinet, and the exhaust cabinet is positioned at the bottom of the reaction cabinet and on one side of the reaction cabinet far away from the gas source cabinet.

Preferably, the dual function reaction apparatus further comprises an operation platform for loading the wafer to be processed.

Preferably, a third air outlet is arranged at the top of the operating platform.

As mentioned above, the utility model discloses a bifunctional reaction device has following beneficial effect:

the double-function reaction furnace of the utility model can grow a material layer on the surface of the wafer and can etch the material layer on the surface of the wafer, and has double functions of growth and etching; meanwhile, the furnace door component in the dual-function reaction furnace can realize the loading and unloading of the wafer at high temperature, and the wafer does not need to be cooled to room temperature after the treatment is finished, so that the utilization efficiency of the furnace door component is obviously improved;

the dual-function reaction furnace of the utility model also has the advantages of simple structure, easy operation, convenient control, sustainable production, high safety and the like;

the utility model discloses a set up the top have first exhaust outlet and first exhaust outlet department is equipped with the air supply cabinet of first air regulation board, and place the air supply system in the air supply cabinet, can make the inside of air supply cabinet be in the little negative pressure state all the time through first exhaust outlet and first air regulation board, thus can effectively avoid supplying gaseous revealing; similarly, through setting up the fume hood that the top has second air exit and second air exit department is equipped with second air regulation board, and arrange exhaust system in the fume hood, can be so that the inside little negative pressure state that is in all the time of fume hood through second air exit and second air regulation board to can effectively avoid revealing of tail gas.

Drawings

Fig. 1 shows a front view of a dual function reaction apparatus provided by the present invention.

Fig. 2 is a schematic sectional view illustrating a furnace door of a dual function furnace in a dual function reaction apparatus according to an exemplary embodiment of the present invention when opened.

Fig. 3 is a schematic sectional view illustrating a furnace door of a dual function furnace in a dual function reaction apparatus according to an example of the present invention when closed.

Fig. 4 is a detailed structural view of a dual function reaction furnace including two inlets in a dual function reaction apparatus according to an exemplary embodiment of the present invention.

Fig. 5 is a detailed structural view of a dual function reaction furnace including four inlets in a dual function reaction apparatus according to an exemplary embodiment of the present invention.

Fig. 6 is a schematic sectional view showing a furnace door of a dual function furnace in a dual function reaction apparatus according to another embodiment of the present invention when closed.

Fig. 7 and 8 are side views taken along direction a of fig. 6, in which the door of fig. 7 is a flip-type door and the door of fig. 8 is a side-open door.

Fig. 9 is a schematic cross-sectional view of a gas source cabinet in a dual-function reaction apparatus according to another embodiment of the present invention.

Description of the element reference numerals

1 double-function reaction furnace

101 furnace tube

102 furnace body

103 heating device

104 air intake assembly

1041 first air intake

1042 second air inlet

1043 third air intake

1044 fourth air intake

105 exhaust port

106 oven door assembly

1061 furnace door

10611 hinge

1062 handling and conveying device

10621 bearing table

10622 slide rail

1063 flange

1064 sealing ring

107 heating zone

1071 first heating zone

1072 second heating zone

1073 third heating zone

108 gas supply system

1081 air inlet pipeline

1082 air supply source

109 exhaust system

1091 exhaust line

1092 Power Pump

1093 Tail gas treatment device

1094 filtering device

110 cooling device

1101 cooling circuit

1102 refrigerant source

111 fourth air outlet

2 substrate to be treated

3 air source cabinet

31 first exhaust port

32 first air volume adjusting plate

4 exhaust cabinet

41 second air outlet

5 control device

51 three-colour signal lamp

6 control cabinet

7 reaction cabinet

8 operating platform

81 third air outlet

91 horizontal adjusting device

92 moving device

Detailed Description

The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The present invention can also be implemented or applied through other different specific embodiments, and various details in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

Please refer to fig. 1 to 9. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the invention in a schematic manner, and only the components related to the invention are shown in the drawings rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, quantity and proportion of the components in actual implementation may be changed at will, and the layout of the components may be more complicated.

Referring to fig. 1 to 3, the present invention provides a dual function reaction apparatus, including: the device comprises a bifunctional reaction furnace 1, an air source cabinet 2 and an exhaust cabinet 3; the double-function reaction furnace 1 is used for growing and etching a surface material layer of a substrate 2 to be processed, and the double-function reaction furnace 1 comprises: a furnace 101 for placing a substrate to be processed; the furnace body 102, the furnace body 102 is positioned at the periphery of the furnace tube 101; the heating device 103 is positioned in the furnace body 101, and the heating device 103 is positioned at the periphery of the furnace tube 102; a gas inlet assembly 104 communicated with the interior of the furnace tube 101 and used for introducing growth gas or etching gas into the furnace tube 101; an exhaust port 105 communicated with the interior of the furnace tube 101; an oven door assembly 106 for communicating or isolating the oven tube 101 from the outside and transferring the substrate 2 to be processed into or out of the oven tube 101, the oven door assembly 106 being located at least one end portion of the oven tube 101; the gas supply system 108 is located in the gas source cabinet 3, the gas supply system 108 includes a gas inlet pipe 1081 and a gas supply 1082, the gas supply 1082 is used for supplying the growth gas or the etching gas, one end of the gas inlet pipe 1081 is connected to the gas inlet assembly 104, and the other end of the gas inlet pipe 1081 is connected to the gas supply 1082; the exhaust system 109 is positioned in the exhaust cabinet 4, the exhaust system 109 comprises an exhaust pipeline 1091 and a power pump 1092, one end of the exhaust pipeline 1091 is connected with the exhaust port 105, and the other end of the exhaust pipeline 1091 is connected with the power pump 1092; a first exhaust opening 31 is formed in the top of the gas source cabinet 3, a first air volume adjusting plate 32 is further arranged in the gas source cabinet 3, and the first air volume adjusting plate 32 is arranged at the first exhaust opening 31; 4 tops of fume hood are equipped with second air exit 41, still be equipped with second air regulation board 42 in the fume hood 4, second air regulation board 42 set up in second air exit 41 department.

As an example, the substrate to be processed 2 may include a wafer, a metal substrate, a transition metal substrate having catalytic activity, and the like. The substrate 2 to be processed may be placed in a tray or a boat and then transferred into the furnace 101, or the substrate 2 to be processed may be directly transferred into the furnace 101.

The furnace tube material adopted by the double-function reaction furnace in the utility model comprises quartz, graphite, silicon carbide, ceramics or corrosion-resistant metal, etc. The furnace 101 can be customized according to actual usage requirements, and can be sized to accommodate a single load of substrates to be processed for a desired operation. As an optimized scheme of the utility model, the operating temperature of boiler tube 101 is between 800 degrees centigrade to 1100 degrees centigrade under the operating temperature, the structure of boiler tube can keep stable for a long time. The furnace body 102 is located at the periphery of the furnace tube 101, and the furnace body 102 is made of high-temperature-resistant heat-insulating materials such as heat-insulating cotton or graphite cotton, so that the working temperature in the furnace tube 101 can be maintained within a stable interval range. A heating device 103 is disposed between the furnace tube 101 and the furnace body 102, and is configured to heat the furnace tube 101 and maintain the temperature of the furnace tube within a stable operating temperature range. The heating device 103 may adopt at least one heating system of a furnace wire, a lamp tube or a radio frequency system. The furnace tube 101 is connected with a gas inlet assembly 104, and growth gas, growth liquid and etching gas are introduced into the furnace tube 101 through the gas inlet assembly 104. By introducing the growth gas into the furnace tube 101, a material layer can be grown on the surface of the substrate 2 to be processed in the furnace tube 101; by introducing the etching gas into the furnace tube 101, the material layer on the surface of the substrate 2 to be processed in the furnace tube 101 can be etched. The furnace tube 101 is further connected to an exhaust port 105, and residual reaction gas or liquid in the furnace tube 101 after the reaction is finished is exhausted through the exhaust port 105. This prevents residual corrosive gas or liquid after completion of the reaction from remaining in the furnace 101, thereby preventing damage during the loading and unloading of the reactant. The furnace tube 101 is communicated or isolated from the outside by the furnace door assembly 106, and whether the furnace tube 101 is communicated with the outside is controlled by opening and closing the furnace door 1061. Simultaneously loading or unloading the substrate 2 to be processed into the furnace tube 101 through the furnace door assembly 106

It should be noted that, when the heating device 103 is a lamp or a radio frequency heating device, the heating device 103 is exposed in the furnace 101, rather than sealed in the furnace body 102. .

In one example, as shown in fig. 2 and 3, the dual function reaction furnace 1 is a horizontal tube furnace.

As an example, referring to fig. 2 and 3, the oven door assembly 106 includes: a handling conveyor 1062, wherein the handling conveyor 1062 comprises a slide rail 10622 and a susceptor 10621 for placing the substrate to be processed, and the slide rail 10622 is located outside one end of the furnace tube 101; the bearing table 10621 is located on the slide rail 10622, and can slide on the slide rail 10622; the furnace door 1061, the furnace door 1061 is fixed to a side of the susceptor 10621 away from the furnace tube 101, and a distance from the furnace door 1061 to a side of the susceptor 10621 close to the furnace tube 101 is less than a length of the furnace tube 101, so as to ensure that the furnace tube 101 is isolated from the outside by the furnace door 1061 when the susceptor 10621 moves into the furnace tube 101; the furnace door 1061 is a push-pull furnace door.

As an example, the slide rail 10622 is preferably a dust-free slide rail to prevent the surface of the reactant from being contaminated by dust generated during loading.

By way of example, the susceptor 10621 may be, but is not limited to, a silicon carbide paddle.

In another example, referring to FIG. 4, FIG. 4 is a detailed block diagram of the air scoop assembly 104. The air intake assembly 104 includes: a first gas inlet 1041 communicated with the interior of the furnace tube 101 and used for introducing growth gas into the furnace tube 101; a second gas inlet 1042 communicated with the interior of the furnace tube 101 and used for introducing growth liquid into the furnace tube 101; a third gas inlet 1043 communicated with the interior of the furnace tube 101 and used for introducing etching gas into the furnace tube 101; and a fourth gas inlet 1044 communicated with the interior of the furnace tube 101 and used for introducing etching liquid into the furnace tube 101. As shown in fig. 4, as a preferable scheme of the present invention, one end of the gas inlet assembly 104 is connected to the inside of the furnace tube 101 through the connecting portion 114 between the furnace body and the gas inlet assembly, and the other end is connected to a gas or liquid reaction source through a pipeline, that is, the other end of the first gas inlet 1041, the second gas inlet 1042, the third gas inlet 1043 and the fourth gas inlet 1044 is connected to the gas supply source 1082 through a gas inlet pipeline 1081 as shown in fig. 2 and 3.

In one example, referring to FIG. 5, FIG. 5 illustrates a detailed block diagram of the air scoop assembly 104. The air intake assembly 104 includes: a first gas inlet 1041 communicating with the interior of the furnace tube 101 and used for introducing growth gas or growth liquid into the furnace tube 101; and a second gas inlet 1042 communicated with the interior of the furnace tube 101 and used for introducing etching gas or etching liquid into the furnace tube 101. As shown in fig. 5, as a preferred embodiment of the present invention, one end of the gas inlet assembly 104 is connected to the inside of the furnace tube 101 through the connecting portion 114 between the furnace body and the gas inlet assembly, and the other end is connected to the gas or liquid reaction source through a pipeline, that is, the other ends of the first gas inlet 1041 and the second gas inlet 1042 are connected to the gas supply source 1082 through a gas inlet pipeline 1081 as shown in fig. 2 and 3.

By way of example, referring to fig. 2, the oven door assembly 106 further comprises: the flange 1063 is positioned between the furnace door 1061 and the furnace body 102, and is sleeved on the periphery of one end of the furnace tube 101 close to the furnace door 1061; and a sealing ring 1064 located between the flange 1063 and the oven door 101. The sealing structure formed by the sealing ring 1064 and the flange 1063 can isolate the atmosphere inside the furnace tube 101 from the outside, so that the reaction gas inside cannot leak to the outside.

By way of example, the sealing ring 1064 may be, but is not limited to, an O-ring, and the material of the sealing ring 1064 may be, but is not limited to, fluorine (F) -doped rubber or perfluoro rubber. The number of the sealing rings 1064 can be set to be single, two or more according to actual needs.

For example, referring to fig. 2, the furnace tube 101 includes a constant temperature region therein, and the length of the constant temperature region is less than or equal to the total length of the furnace tube 101, preferably, the length of the constant temperature region occupies 1/3-1 of the total length of the furnace tube 101, and more preferably, the length of the constant temperature region occupies 1/3-1/2 of the total length of the furnace tube 101. For example, as shown in fig. 2, the second heating zone 1082 in the heating zone 108 is controlled to be at the operating temperature by the heating device 103, and forms the constant temperature zone, where the length of the constant temperature zone is 1/3 of the length of the furnace tube 101. Of course, in this embodiment, the first heating zone 1081 and the third heating zone 1083 can be adjusted to increase the constant temperature zone range to the length of the furnace 101.

The exhaust system 109 further comprises: an exhaust gas treatment device 1093, the exhaust gas treatment device 1093 being connected to the power pump 1092 via an exhaust line 1091; a filter 1093, wherein the filter 1093 is located on the exhaust line 1091.

As an example, the dual function reaction furnace further includes a cooling device 110, and the cooling device 110 includes: and a cooling pipeline 1101 located at the periphery of the heating device 113 and spaced apart from the heating device 113. The cooling circuit 1101 may be a circuit located inside the furnace body, or a circuit surrounding the furnace body, such as the structure shown in fig. 2, and the cooling circuit 1101 is a circuit located inside the furnace body. And a refrigerant source 1102 communicating with the cooling line 1101. The coolant source 1102 may be a source of cooling gas or a source of cooling liquid. Through using cooling device 110 can make the cooling process of boiler tube 101 more rapid, also can effectively reduce ambient temperature, maintains the constant temperature production environment in factory building workshop.

By way of example, the air inlet pipe 1081, the exhaust pipe 1091, and other pipes may be, but are not limited to, stainless steel pipes, and the pipes are coated with a PTFE (polytetrafluoroethylene) coating, a ceramic coating, an enamel coating, or the like.

In another example, referring to fig. 6-8, the oven door assembly 106 includes: the furnace body 102 is movably connected with one side of the furnace door 1061, specifically, the furnace door 1061 may be connected with the furnace body 102 through a hinge 10611, when the furnace door 1061 is opened, the furnace tube 101 is communicated with the outside, and when the furnace door 1061 is closed, the furnace tube 101 is isolated from the outside; a loading and unloading conveying device for conveying the substrate 2 to be processed into the furnace tube 101 and conveying the processed wafer 2 out of the furnace tube 101, wherein the loading and unloading conveying device is positioned on one side of the furnace door; the oven door 1061 is a flip type oven door or a side-open type oven door.

In one example, as shown in fig. 7, the door 1061 is a flip-type door, and the door 202 is disposed on one side of the furnace body 101, and after the door 101 is opened upward by an upper hinge 10611, the wafers are loaded or unloaded by a loading/unloading conveyor 1062. The handling conveyor 1062 may employ at least one of a rectangular coordinate type robot, a spherical coordinate type robot, an articulated robot, or a cylindrical coordinate type robot.

In another example, as shown in fig. 8, the door 1061 is a side-open door, the door 101 is provided on one side of the furnace body 101, and after the door 202 is opened by a side hinge 10611, wafers are loaded or unloaded by a loading/unloading conveyor 1062. The handling conveyor 1062 may employ at least one of a rectangular coordinate type robot, a spherical coordinate type robot, an articulated robot, or a cylindrical coordinate type robot.

As an example, a cross-sectional view of the air supply box 3 is shown in fig. 9, and a cross-sectional view of the exhaust cabinet 4 is similar to fig. 9 and will not be schematically described here.

As an example, the bifunctional reaction apparatus further comprises: and a control device 5 for controlling the operation of the reaction furnace 1, the gas supply system 108 and the gas exhaust system 109. Specifically, the control device 5 may include a temperature control module (not shown), an air supply system control module (not shown), an exhaust system control module (not shown), a motion control module (not shown), and a safety protection module (not shown).

As an example, the temperature control module is connected to the heating device 103 and is used for controlling the heating device 103 in the dual-function reaction furnace 1, and the temperature control module is a temperature control component with high precision and good repeatability and stability, and is used for controlling the heating device 103 to heat the furnace tube 101, and simultaneously providing safety interlocking functions such as over-temperature alarm, limit furnace temperature alarm and couple breaking alarm; the temperature control module can be any one of the existing devices or modules capable of realizing the functions.

For example, the gas supply system control module is connected to the gas supply source 1082, and is configured to control the gas supply source 1082 to provide a growth gas or an etching gas into the furnace 101. Specifically, the air inlet pipeline 1081 of the air supply system 108 is provided with elements such as a valve and a pressure gauge, the air supply source 1082 generally pumps growth gas or etching gas into the furnace tube 101 through a pressure pump, and the air supply system control module is configured to control the operation of the valve, the pressure gauge, the pressure pump, and the like to provide the growth gas or the etching gas into the furnace tube 101.

For example, the exhaust system control module is connected to the power pump 1092, and is configured to control the power pump 1092 to pump the residual gas in the furnace 101, and control the power pump 1092 to pump the vacuum in the furnace 101. Specifically, the exhaust line 1091 of the exhaust system 109 is provided with a valve, a pressure gauge, and other elements, and the exhaust system control module is further configured to control the operation of the valve and the pressure gauge.

As an example, the motion control module is connected to a driving device of the loading platform 10621 and the oven door 1061, and is configured to smoothly and accurately control the motion and stop of the loading platform 10621, control the automatic locking of the oven door 1061, and provide safety interlock and abnormal alarm functions, such as sudden motion stop and position interlock, of the loading platform 10621 and the oven door 1061.

The safety protection module comprises power failure protection, EMO (emergency stop) protection, gas monitoring protection, hot exhaust monitoring protection, cooling water flow protection, exhaust pipeline pressure protection, equipment status signal lighthouse (such as a three-color signal lamp 51 in figure 1) and the like, and a Scrubber (waste gas treatment) alarm outside a machine table and other alarms of plant affairs; gas leak detection, overpressure protection, over-temperature protection, etc.

The bifunctional reaction apparatus further comprises: the control cabinet 6, the said controlling device 5 locates in the said control cabinet 6; the furnace body 102, the furnace tube 101 and the furnace door assembly 106 are all positioned in the reaction cabinet 7; the gas source cabinet 3 is positioned on one side of the reaction cabinet 7, and the exhaust cabinet 4 is positioned at the bottom of the reaction cabinet 7 and on one side of the reaction cabinet far away from the gas source cabinet 3. The top of the reaction cabinet 7 is provided with a fourth air outlet 111, and the fourth air outlet 111 is communicated with the inside of the reaction cabinet 7 and used for dissipating heat of the dual-function reaction furnace 1.

As an example, the dual function reaction apparatus further comprises an operation platform 8, wherein the operation platform 8 is used for loading the wafer 2 to be processed; a slide rail 10622 as shown in fig. 2 is located on the operation platform 8. Operation platform 8 top is equipped with third air exit 81, third air exit 81 is used for the ventilation exhaust to prevent operation platform 8 has harmful gas to leak and causes the injury to operating personnel.

As an example, the gas source cabinet 3, the exhaust cabinet 4 and the control cabinet 6 are respectively provided with a horizontal adjustment device 91 and a moving device 92 for horizontal adjustment and movement of the gas source cabinet 3, the exhaust cabinet 4 and the control cabinet 6.

Referring to fig. 1 to 3, the dual-function reaction apparatus of the present invention can conveniently and efficiently complete the growth or etching process of the surface material layer of the substrate to be processed, and the operation method of the dual-function reaction furnace of the present invention is as follows:

before the wafer 2 to be processed is placed, the door 1061 of the dual-function reaction furnace is opened, as shown in fig. 2, the susceptor 10621 is moved to the rightmost end by the slide rail 10622, at this time, the susceptor 10621 is located on the operating table 8, the boat containing the substrate 2 to be processed is placed on the susceptor 10621, and at this time, the substrate 107 to be processed is placed on the susceptor 10621. After the substrate 2 to be processed is loaded, the susceptor 10621 moves along the slide rail 10622 toward the furnace 101 until the furnace door 1061 is closed, and a sealing structure is formed by the sealing ring 1064 and the flange 106e, as shown in fig. 3. Adjusting the temperature of the required constant-temperature area to the working temperature through the heating device 103; meanwhile, the atmosphere in the furnace tube 101 is pumped out through the exhaust port 105 by the power pump 1092. The supply source 109 introduces a required reaction gas source into the furnace tube 101 through the gas inlet assembly 104, where the reaction gas source may be a living gas or an etching gas, and the reaction atmosphere required for the reaction is maintained in the furnace tube 101 according to whether an actual process is to perform material layer growth or material layer etching. The reaction is carried out at a stable reaction temperature and under a reaction atmosphere. After the reaction is completed, the residual reaction gas in the furnace tube 101 is pumped out through the exhaust port 105 by the power pump 1092, and the temperature in the furnace tube 101 is adjusted to a loading and unloading temperature by the heating device 103, for example, the loading and unloading temperature in the present invention is preferably 60 to 700 ℃. When the temperature in the furnace 101 drops to the loading/unloading temperature, the susceptor 10621 is moved to the rightmost end by the slide rail 10622, and at this time, the furnace door 1061 is opened again, as shown in fig. 2, and the wafer 2 to be processed, which has completed the reaction, is taken out by using the loading/unloading conveyor 204. The design does not need to reduce the temperature in the furnace tube 101 to room temperature, but 60-700 ℃, reduces the waiting time of temperature reduction, and improves the utilization rate of reaction furnace equipment.

To sum up, the utility model provides a bifunctional reaction device, bifunctional reaction device includes: the double-function reaction furnace, the gas source cabinet and the exhaust cabinet; the double-function reaction furnace is used for growing and etching a surface material layer of a substrate to be processed, and comprises: a furnace tube for placing a substrate to be processed; the furnace body is positioned at the periphery of the furnace tube; the heating device is positioned in the furnace body and positioned at the periphery of the furnace tube; the gas inlet component is communicated with the interior of the furnace tube and is used for introducing growth gas or etching gas into the furnace tube; the exhaust port is communicated with the interior of the furnace tube; the furnace door assembly is used for communicating or isolating the furnace tube with the outside and transmitting the wafers to be processed into or out of the furnace tube, and is positioned at least one end part of the furnace tube; the gas supply system is positioned in the gas source cabinet and comprises a gas inlet pipeline and a gas supply source, the gas supply source is used for providing the growth gas or the etching gas, one end of the gas inlet pipeline is connected with the gas inlet component, and the other end of the gas inlet pipeline is connected with the gas supply source; the exhaust system is positioned in the exhaust cabinet and comprises an exhaust pipeline and a power pump, one end of the exhaust pipeline is connected with the exhaust port, and the other end of the exhaust pipeline is connected with the power pump; the top of the air source cabinet is provided with a first air outlet, a first air volume adjusting plate is also arranged in the air source cabinet, and the first air volume adjusting plate is arranged at the first air outlet; the top of the exhaust cabinet is provided with a second air outlet, a second air adjusting plate is further arranged in the exhaust cabinet, and the second air adjusting plate is arranged at the second air outlet. The double-function reaction furnace of the utility model can grow a material layer on the surface of the substrate to be processed and can also etch the material layer on the surface of the wafer, thereby having double functions of growth and etching; meanwhile, the furnace door component in the dual-function reaction furnace can realize the loading and unloading of the substrate to be treated at high temperature without cooling to room temperature after the treatment is finished, thereby obviously improving the utilization efficiency; the dual-function reaction furnace of the utility model also has the advantages of simple structure, easy operation, convenient control, sustainable production, high safety and the like; the utility model discloses a set up the top have first exhaust outlet and first exhaust outlet department is equipped with the air supply cabinet of first air regulation board, and place the air supply system in the air supply cabinet, can make the inside of air supply cabinet be in the little negative pressure state all the time through first exhaust outlet and first air regulation board, thus can effectively avoid supplying gaseous revealing; similarly, through setting up the fume hood that the top has second air exit and second air exit department is equipped with second air regulation board, and arrange exhaust system in the fume hood, can be so that the inside little negative pressure state that is in all the time of fume hood through second air exit and second air regulation board to can effectively avoid revealing of tail gas.

The above embodiments are merely illustrative of the principles and effects of the present invention, and are not to be construed as limiting the invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims

1. A dual function reaction device, comprising: the double-function reaction furnace, the gas source cabinet and the exhaust cabinet; wherein,

a furnace tube for placing a substrate to be processed;

the furnace body is positioned at the periphery of the furnace tube;

the exhaust port is communicated with the interior of the furnace tube;

the furnace door assembly is used for communicating or isolating the furnace tube with the outside and transmitting the wafers to be processed into or out of the furnace tube, and is positioned at least one end part of the furnace tube;

2. The bifunctional reaction device of claim 1, characterized in that: the air intake assembly includes:

3. The bifunctional reaction device of claim 1, characterized in that: the air intake assembly includes:

4. The bifunctional reaction device of claim 1, characterized in that: the dual-function reaction furnace further comprises a cooling device, and the cooling device comprises:

and the refrigerant source is communicated with the cooling pipeline.

5. The bifunctional reaction device of claim 1, characterized in that: the difunctional reaction furnace is a horizontal tubular furnace, and the furnace door component comprises:

the loading and unloading conveying device comprises a slide rail and a bearing platform for placing the substrate to be treated, and the slide rail is positioned on the outer side of one end of the furnace tube; the bearing table is positioned on the slide rail and can slide on the slide rail;

6. The bifunctional reaction device of claim 1, characterized in that: the difunctional reaction furnace is a vertical tube furnace, and the furnace door component comprises:

7. The bifunctional reaction device of claim 6, characterized in that: the loading and unloading conveying device comprises at least one of a rectangular coordinate type mechanical arm, a spherical coordinate type mechanical arm, a joint type mechanical arm or a cylindrical coordinate type mechanical arm.

8. Bifunctional reaction device according to any of claims 5 to 7, characterized in that: the oven door assembly further comprises:

and the sealing ring is positioned between the flange and the furnace door.

9. The bifunctional reaction device of claim 1, characterized in that: the heating device surrounds the furnace tube in multiple sections so as to divide the furnace tube into a plurality of heating areas.

10. The bifunctional reaction device of claim 1, characterized in that: the furnace tube is internally provided with a constant temperature area, and the length of the constant temperature area accounts for 1/3-1 of the total length of the furnace tube.

11. The bifunctional reaction device of claim 1, characterized in that: the exhaust system further includes:

and the filtering device is positioned on the exhaust pipeline.

12. The bifunctional reaction device of claim 1, characterized in that: the bifunctional reaction apparatus further comprises: and the control device is used for controlling the operation of the reaction furnace, the gas supply system and the exhaust system.

13. The bifunctional reaction device of claim 12, wherein: the bifunctional reaction apparatus further comprises:

the control device is positioned in the control cabinet;

14. The bifunctional reaction device of claim 1, characterized in that: the bifunctional reaction apparatus further comprises an operation platform for loading the substrate to be treated.

15. The bifunctional reaction device of claim 14, wherein: and a third air outlet is formed in the top of the operating platform.