CN207623542U - Beam angle measuring device and its irradiation system - Google Patents

Beam angle measuring device and its irradiation system Download PDF

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Publication number
CN207623542U
CN207623542U CN201721885515.XU CN201721885515U CN207623542U CN 207623542 U CN207623542 U CN 207623542U CN 201721885515 U CN201721885515 U CN 201721885515U CN 207623542 U CN207623542 U CN 207623542U
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angle
probe
irradiation
measuring device
electron beam
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张昌有
尼古拉·库克沙诺夫
希尔盖·法捷耶夫
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Shanxi One Tai Ke Electrical Equipment Co Ltd
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Shanxi One Tai Ke Electrical Equipment Co Ltd
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Abstract

The utility model is related to beam angle measuring device and its irradiation systems.The beam angle measuring device includes shielding case, multiple probes and multiple voltage detectors corresponding to the probe, measurement seam is provided on the shielding case, the probe is located in the shielding case and is arranged as the circular arc in the center of circle along using the center for measuring seam, the arc length being spaced between the adjacent probe corresponds to scheduled central angle, each described probe passes through corresponding resistance eutral grounding, the voltage detector and corresponding resistor coupled in parallel, the voltage that the induced current for measuring corresponding probe generates at corresponding resistance both ends.The beam angle measuring device can accurately measure the average bias angle for the electron beam that irradiation system is drawn, irradiation system can be adjusted irradiation angle according to the average bias angle measured, the offset angle of the electron beam after irradiation angle is adjusted in preset zone of reasonableness, can ensure the effect and efficiency of irradiation.

Description

Beam angle measuring device and its irradiation system
Technical field
The utility model is related to accelerator irradiation processing fields, more particularly to beam angle measuring device and its irradiation System.
Background technology
In electron beam irradiation processing technology, irradiation technique is and the distribution of radiation field an important factor for determining processing quality It is the key factor for influencing irradiation technique.Irradiation technique is to utilize effect of the ray between monomer or macromolecule, ionization and excitation The activated atom and anakmetomeres of generation are allowed to that a series of physical, chemistry and biochemical change occurs with substance, lead to object The degradation of matter, polymerization, crosslinking are simultaneously modified.
The electron beam that existing irradiation devices irradiate out can not accurately control the offset angle of the electron beam of extraction.Therefore, It can not ensure that being illuminated object reaches ideal irradiation effect and irradiation efficiency.
Utility model content
Based on this, it is necessary to the technical issues of for the Electron beam deflection angle for accurately controlling extraction, provide a kind of electron beam Angle measurement unit and its irradiation system.
A kind of beam angle measuring device, including shielding case, multiple probes and multiple electricity corresponding to the probe Detector is pressed, measurement is provided on the shielding case and is stitched, the probe is located in the shielding case and along with the measurement seam Center is that the circular arc in the center of circle arranges, and the arc length being spaced between the adjacent probe corresponds to scheduled central angle, described in each Probe is by corresponding resistance eutral grounding, the voltage detector and corresponding resistor coupled in parallel, the sense for measuring corresponding probe The voltage that induced current generates at corresponding resistance both ends.
Preferably, the probe is alternatively arranged along being evenly distributed as the circular arc in the center of circle using the center for measuring seam.
Preferably, the angle of the central angle corresponding to circular arc where multiple probes is 90 degree.
Preferably, the resistance value value range of the resistance is:10kOhm-30kOhm.
Preferably, the measurement seam is that thin-and-long stitches, and allows electron beam that the measurement is passed through to stitch and enters in the shielding case.
Preferably, the shielding case includes cover board, side plate and bottom plate, and the cover board is oppositely arranged with the bottom plate, institute Side plate is stated to be connected between the cover board and the bottom plate.
Preferably, at least one side plate is L-shaped, and the side plate can support the electricity when measuring beam angle Beamlet angle measurement unit, and make measurement seam towards scheduled direction.
A kind of irradiation system, including irradiation devices and above-mentioned beam angle measuring device, the irradiation devices can Electron beam is drawn, the beam angle measuring device is used to measure the offset angle for the electron beam that the irradiation devices are drawn, institute The deflection angle that irradiation devices adjust electron beam according to the measurement result of the beam angle measuring device is stated, to be had The radiation electric beamlet at predetermined bias angle.
Preferably, the irradiation devices include that scan module, line extraction room and deflection magnet, the scan module are used In drawing electron beam, the line draws room for drawing electron beam and forming irradiation zone, and the deflection magnet is arranged in institute The outside that line draws room is stated, the spoke of the electron beam can be adjusted according to the measurement result of the beam angle measuring device Irradiation angle.
Preferably, the line, which draws room, away from the side of the scan module there is extraction window, the extraction window to allow Electron beam is pierced by the line and draws room.
Beam angle measuring device provided by the utility model and its irradiation system have following advantages:
Beam angle measuring device can accurately measure the average bias angle for the electron beam that irradiation system is drawn, if Not in rational angular range, irradiation system can be adjusted according to measurement result in irradiation system at the average bias angle of electron beam Deflection magnet electric current so that be adjusted irradiation angle after electron beam offset angle in preset zone of reasonableness, because This can ensure the effect and efficiency of irradiation.
Description of the drawings
Fig. 1 is the structural schematic diagram of the irradiation system of the utility model embodiment;
Fig. 2 is the structural schematic diagram of the beam angle measuring device of the utility model embodiment;
Fig. 3 is the beam angle measuring device of the utility model embodiment and its use structural representation of irradiation system Figure;
Fig. 4 is the enlarged diagram at the A of the beam angle measuring device of Fig. 2;
Fig. 5 is the circuit diagram of the probe of the utility model embodiment;
Fig. 6 is the broken line for the voltage value that each test position measures the corresponding resistance of each probe in the utility model embodiment Figure;
Fig. 7 be the utility model it is another implement each inspection positions pop one's head in corresponding resistance voltage value line chart.
In figure, irradiation devices 100, scan module 110, line are drawn room 120, electron trajectory 121, extraction window 122, are drawn Window center line 123, deflection magnet 130, foil flange 140, irradiation zone 150, angle measurement position 160, beam angle measure Device 200, shielding case 210, cover board 211, side plate 212, the first side plate 2121, the second side plate 2122, bottom plate 213, probe 220, Resistance 221, measures seam 240, connector 250, fastener 251, screw mounting hole 252 at voltage detector 230.
Specific implementation mode
To keep the above objects, features, and advantages of the utility model more obvious and easy to understand, below in conjunction with the accompanying drawings to this The specific implementation mode of utility model is described in detail.Elaborate many details in order to abundant in the following description Understand the utility model.But the utility model can be much to implement different from other manner described here, this field Technical staff can do similar improvement without prejudice to the utility model connotation, therefore the utility model is not by following public affairs The limitation for the specific implementation opened.
As depicted in figs. 1 and 2, Fig. 1 is the structural schematic diagram of irradiation devices 100;Fig. 2 is beam angle measuring device 200 structural schematic diagram.
Please refer to Fig. 2 and Fig. 5, a kind of beam angle measuring device 200 provided by the utility model, including shielding case 210, multiple probes 220 and the voltage detector 230 corresponding to the probe 220.Measurement seam is provided on shielding case 210 240, the measurement meets 240 to be stitched for thin-and-long.Multiple probes 220 are located in shielding case 210 and along with the centers for measuring seam 240 The circular arc in the center of circle arranges, and the arc length being spaced between adjacent probe 220 corresponds to scheduled central angle, each probe 220 passes through Corresponding resistance 221 is grounded.Voltage detector 230 is in parallel with corresponding resistance 221, the sense for measuring corresponding probe 220 The voltage that induced current generates at 221 both ends of corresponding resistance.
Referring to Fig. 1, a kind of irradiation system provided by the utility model, including irradiation devices 100 and above-mentioned electron beam Angle measurement unit 200.Irradiation devices 100 can draw electron beam, and beam angle measuring device 200 is for measuring irradiation dress Set the offset angle of the electron beam of 100 extractions.Irradiation devices 100 are adjusted according to the measurement result of beam angle measuring device 200 The deflection angle of electron beam, to obtain the radiation electric beamlet with predetermined bias angle.
Specifically, irradiation devices 100 include scan module 110, line extraction room 120 and deflection magnet 130.Scan mould The surface that room 120 is drawn in line is arranged in block 110, for drawing electron beam outward.Electron beam is drawn room 120 from line and is worn Go out, and is drawn in line and form electron trajectory 121 in room 120.Line draws room 120 to be had away from the side of scan module 110 Extraction window 122, extraction window 122 allow electron beam to be pierced by line extraction room 120.Deflection magnet 130 is fixed at line The outside of room 120 is drawn, the deflection magnet 130 makes the deflection of a beam of electrons predetermined angular project by applying scheduled magnetic field Line draws room 120, so that the irradiation devices 100 have scheduled irradiation range and Electron beam deflection angle.It is worth explanation It is:Electron beam deflection angle is between drawing 120 lower plane of room after the electron beam drawn is deflected through deflection magnet 130 with line Angle.Ranging from 40 °~50 ° of the possible angle at the average bias angle of electron beam is (i.e.:45 ° ± 5 ° of deviation).
Further, irradiation devices 100 further include foil flange 140.Foil flange 140 be arranged deflection magnet 130 just under Room 120 is drawn for fixing line by side.In present embodiment, foil flange 140 is ring-type, and inside forms above-mentioned extraction window 122.
Further, electron beam draws room 120 by above-mentioned line, and the lower section that room 120 is drawn in line forms a spoke According to region 150.Electron beam and extraction window center line 123 in the irradiation zone 150 are in 40 °~50 ° angles.In this angular regions Interior electron beam has substantially uniform distribution, can ensure the uniformity of irradiation.
Whether there is predetermined irradiation range and Electron beam deflection angle to detect the irradiation devices 100, in irradiation zone 150 Selection has multiple angle measurement positions 160.In present embodiment, the angle measurement position 160 can be apart from extraction window 122 Preset distance at, chosen in preset range around extraction window center line 123.Such as at the 110mm apart from extraction window 122, It is chosen in the range of 123 or so 300mm of extraction window center line.Certainly, according to the difference of actual conditions, the angle measurement position Setting 160 can also select in other suitable regional extents, however it is not limited to described in above example.
As shown in Fig. 2, a kind of beam angle measuring device 200 provided by the utility model, including it is shielding case 210, more It is a probe 220 and corresponding to it is described probe 220 voltage detector 230.Measurement seam 240 is provided on shielding case 210, it is described Measurement meets 240 to be stitched for thin-and-long.Multiple probes 220 are located in shielding case 210 and along the center to measure seam 240 as the circle in the center of circle Arc arranges, and the arc length being spaced between adjacent probe 220 corresponds to scheduled central angle, each probe 220 passes through corresponding electricity 221 ground connection of resistance.Voltage detector 230 is in parallel with corresponding resistance 221, and the induced current for measuring corresponding probe 220 exists The voltage that 221 both ends of corresponding resistance generate.
Preferably, the resistance value value range of resistance 221 is:10kOhm-30kOhm.
As shown in figure 5, in the present embodiment, the resistance value of resistance 221 selects 20kOhm, and each probe 220 passes through resistance 221 ground connection.One end of resistance 221 is connect with probe 220, other end ground connection, and voltage detector 230 and corresponding resistance 221 It is arranged in parallel.The electron beam of extraction is beaten on probe 220, and corresponding electric currents are generated in probe 220, electric current by resistance 221 most After reach ground terminal, 221 both ends of the resistance formed potential difference, the voltage detector 230 can detect to obtain corresponding The voltage value at 221 both ends of resistance.The voltage value measured obtains electric current and is inversely proportional with resistance 221, electric current is with electricity according to law It is pressed into direct ratio.In other embodiments, 10kOhm or 30kOhm also can be selected in the resistance value of resistance 221, can reach above-mentioned implementation Effect.
Preferably, probe 220 is evenly distributed as the circular arc in the center of circle and is alternatively arranged along using the center for measuring seam 240.And it is multiple The angle for the central angle popped one's head in corresponding to 220 place circular arcs is 90 degree.
In the present embodiment, multiple probes 220 are arranged along arc curve uniform intervals, the arc curve with The center for measuring seam 240 is the center of circle.Further, the quantity of the probe 220 is 13, every two adjacent probes 220 Between the angle of central angle corresponding to the arc length that is spaced be 7.5 °.In the present embodiment, probe 220 is popped one's head in using EBIC, EBIC probes, which are one kind, can sense electron beam, and generate corresponding faradic probe.
The shielding case 210 is polyhedron-shaped, and in the present embodiment, the shielding case 210 is located at the measurement and stitches 240 liang The part of side is symmetrically set.Specifically, the shielding case 210 includes cover board 211, side plate 212 and bottom plate 213.It is described Cover board 211 offers the measurement seam 240.The cover board 211 and the bottom plate 213 are oppositely arranged, and the side plate 212 is connected to Between the cover board 211 and the bottom plate 213.The cover board 211, side plate 212 and bottom plate 214 are surrounded into the shielding case 210。
The side plate 212 includes two the first side plates 2121 being oppositely arranged and two the second side plates being oppositely arranged 2122.Each first side plate, 2121 substantially L-shaped shape, substantially 90 ° of the angle of L-shaped corner, two described The L-shaped opening of side plate 2121 is oppositely arranged.In the present embodiment, first side plate 2121 is that two boards splicing group is L-shaped, should L-shaped corner becomes fillet, which will not be easy the user that damages as right angle into polishing step is crossed.Certainly, It is appreciated that first side plate 2121 or integrated molding, may be used and be integrally molded punch forming.
Each described second side plate 2122 is the structure of polygon.Second side plate 2122 is substantially in polygon, this In embodiment, second side plate 2122 is the structure of hexagon.
In the present embodiment, second side plate 2122 is connected with the cover board 211 and the bottom plate 213 using fastener 251 It connects.The fastener 251 is preferably screw, it will be understood that the fastener 251 or bolt, rivet etc., this practicality are new Type is not limited.
It is connected as shown in figure 4, specifically, between bottom plate 213 and the second side plate 2122 being fixedly mounted by connector 250. The connector 250 is substantially L-shaped.250 both ends of the connector pass through the screw and the bottom plate 213 and the second side respectively Plate 2122 connects, and realizes the interconnection between the bottom plate 213 and the second side plate 2122.The cover board 211 and the second side plate It is also attached, is repeated no more using similar connector between 2122.
In the present embodiment, pass through welding manner between first side plate 2121 and the cover board 211 and the bottom plate 213 It is connected.It is appreciated that in other implementations, first side plate 2121 and the cover board 211 or first side plate 2121 can be integrally formed with the one of both in the bottom plate 213.
As shown in figure 3, when measuring the offset angle of electron beam of irradiation devices 100, the beam angle measuring device 200 settings corresponding with the angle measurement position 160 in irradiation devices 100, measurement meet 240 center to be located at the angle measurement Position 160.Specifically, first side plate 2121 can be placed in a plane, L-shaped structure can be such that the measurement stitches 240 center line is substantially in 45 degree of angles with extraction window center line 123, and measures the electron beam that seam 240 is approximately towards the position Radiation direction.Certainly, the difference according to the angle measurement position 160, the beam angle measuring device 200 are put It accordingly to adjust.
The principle that the beam angle measuring device 200 measures Electron beam deflection angle is as follows:
Electron beam on angle measurement position 160 passes through measurement seam 240 to enter in the shielding case 210, and electron beam is got to When on the probe 220, probe 220 can be made to generate corresponding induced current.It is appreciated that electron beam is relative to probe 220 Angle is different, and the faradic size that probe 220 generates also has corresponding difference.The electron beam of identical energy vertically gets to probe When 220, the induced current that probe 220 generates is maximum, the electricity at 221 both ends of correspondence resistance that corresponding voltage detector 230 measures Pressure is maximum;On the contrary, when probe 220 is got in electron beam inclination, the induced current that probe 220 generates accordingly reduces, corresponding voltage The voltage at 221 both ends of correspondence resistance that detector 230 measures also accordingly reduces.In the present embodiment, arranged by arc multiple Probe 220 detects the induced current of electron beam generation, probe 220 that can corresponding to the resistance 221 by maximum voltage value, Think that electron beam is incident perpendicular to the position probe 220, can obtain electronics according to the predetermined arrangement mode of probe 220 at this time The offset angle of beam.For example, in present embodiment, if the voltage at 221 both ends of resistance corresponding to intermediate probe 220 is maximum, Then think that the offset angle of the electron beam of corresponding test position is 45 degree;If the resistance 221 corresponding to the probe 220 of other positions The voltage at both ends is maximum, then, specifically, can be according to the position probe 220 and centre according to the predetermined arrangement mode of probe 220 The relative position relation of probe 220 obtains the offset angle of electron beam.
When practical measurement, multiple beam angle measuring devices 200 can be used in different angle measurement simultaneously Position 160 measures, to promote the measurement efficiency of beam angle measuring device 200.
Below for a kind of specific embodiment to using the beam angle measuring device 200 measure electronics by the way of into Row illustrates:
Incorporated by reference to Fig. 1, tetra- positions A, B, C, D are chosen as angle measurement in the radiation areas of the irradiation devices 100 Position 160.A, the direction arrangement along a straight line of the tetra- angle measurement positions 160 B, C, D and the axis centered on extraction window center line 123 Line is symmetrical arranged, and the vertical range between four angle measurement positions 160 and extraction window 122 is 110mm, wherein position A, B is located at the side of extraction window center line 123, and the vertical range between position A and extraction window center line 123 is 300mm, position Vertical range between B and extraction window center line 123 is 175mm;Position C, D are located at the other side of extraction window center line 123, position It is 175mm to set vertical range between C and extraction window center line 123, between position B and extraction window center line 123 it is vertical away from From for 300mm, offset angle of the beam angle measuring device 200 respectively at upper position measurement electron beam.Electronics beam angle When degree measuring device 200 is placed in measurement position, the line and extraction window center line of center probe 220 and the center for measuring seam 240 123 angle is 45 °.
The voltage statistic such as table at 220 corresponding resistance of each probe, 221 both ends measured at each angle measurement position 160 1, wherein with probe 220 and measuring the line of centres for meeting 240 and the angle table between the plane of extraction window center line 123 Show the position of corresponding probe 220.
Table 1 each measures the voltage at the corresponding resistance both ends of each probe that position measures
In order to more intuitively present measurement result, as shown in fig. 6, can by the data measured in table in a manner of line chart table Show.It will be appreciated from fig. 6 that being measured at position in A and D, the voltage at 220 corresponding resistance of probe, 221 both ends at 45 ° of positions is maximum, The potential difference values measured according to 221 both ends of resistance are modified, then the offset angle that can obtain the measurement position electron beam is 46 °; It is measured at position in B and C, the voltage at 220 corresponding resistance of probe, 221 both ends at 37.5 ° of positions is maximum, then can obtain the survey The offset angle for measuring the corresponding electron beam in position is 52.5 °.
In order to determine the average bias angle α of electron beamaverage, use formula:
Be worth explain be:Wherein, αaverageIndicate the average bias angle of electron beam, αiIndicate the offset angle of electron beam, αi max- αi minIndicate that the maximum value at the average bias angle measured subtracts the difference of minimum value, Δ α average indicate electron beam The deviation factor at average bias angle.The result such as the following table 2 can be calculated according to above-mentioned formula:
The average bias angle of 2 electron beam of table
Therefore, it can obtain in this specific embodiment through the above way, the average bias angle of electron beam is 49.25 degree, The coefficient of mean deviation of offset angle is 13%, can need the amount adjusted with Electron beam deflection angle according to the deviation factor, then control The offset angle of electron beam is adjusted corresponding amount by deflection magnet 130.
In addition, by the way that 220 positions of probe are rationally arranged, the range of ideal irradiation zone 150 can also be measured.In this implementation In mode, the probe 220 selects cylindrical probe, and 220 quantity of popping one's head in is 32, is in rectangular arrangement, and adjacent Spacing distance is 50mm between probe.The resistance value of resistance 221 is 20kOhm, and each probe 220 is grounded by the resistance 221. As shown in figure 5, voltage detector 230 is arranged in parallel with corresponding resistance 221.In other embodiments, optional resistance value is The resistance of 10kOhm or 30kOhm measures, and the effect reached is identical.In the present embodiment, it is measurement irradiation zone 150 Uniformity, voltage detector 230 is mounted at 150mm apart from extraction window 122, for measuring and 220 corresponding electricity of popping one's head in Hinder 221 both end voltage values.In other embodiments, voltage detector 230 can also be mounted on apart from other positions of extraction window 122 Place is set, can be measured and the voltage value at 220 corresponding resistance, 221 both ends of popping one's head in.For example, the 140mm apart from extraction window 122 At place or 160mm etc..The voltage value that probe 220 corresponds to 221 both ends of resistance each of is measured, statistics is as shown in table 3:
Table 3 is respectively popped one's head in the voltage value (mV) at corresponding resistance both ends
Position 1 2 3 4 5 6 7 8
Voltage 1.3 1.4 1.7 2.1 3.1 4.3 7.2 41.4
Position 9 10 11 12 13 14 15 16
Voltage 122 131 130 131 123 115 114 130
Position 17 18 19 20 21 22 23 24
Voltage 160 110 108 115 121 122 118 120
Position 25 26 27 28 29 30 31 32
Voltage 109 32 5.2 1 1 1.8 1.5 1.5
In order to more intuitively show measurement result, as shown in fig. 7, can be by the data measured in table with the side of line chart Formula indicates.
In the present embodiment, probe 220 selects cylindrical probe, and 220 quantity of popping one's head in is 32, is in rectangular row Row, and spacing distance is 50mm between adjacent probe.When the electron beam of extraction is got on probe 220, probe 220 can be made to generate Corresponding induced current.Electric current is grounded by resistance 221, and potential difference, 230 energy of voltage detector are formed at the both ends of resistance 221 Enough detections obtain the voltage value at 221 both ends of corresponding resistance.It can pass through electricity according to the predetermined arrangement mode of probe 220 at this time The probe 220 corresponding to one group of resistance 221 that the voltage that detector 230 measures is metastable, voltage value is larger is pressed to determine One effectively irradiation zone 150.
Specifically, for example, in the present embodiment, if the voltage at 221 both ends of resistance corresponding to intermediate probe 220 is most Greatly, at this time, it is believed that intermediate probe 220 is by electron beam double-side radiation, then it is assumed that the spoke of corresponding electron beam in the test position Penetrate best results.Therefore the irradiation effect of irradiation devices 100 and irradiation efficiency can reach best in the test position.Other The voltage value at 221 both ends of resistance corresponding to the probe 220 of position is opposite to be reduced, then it is assumed that the electron beam in corresponding test position Irradiation effect also opposite weaken.The voltage value corresponding to probe 220 in ideal effective irradiation region 150 is relatively high, And it is not too large to float up and down.
Shown in line chart 7, the voltage value of resistance 221 measured by voltage detector 230 is in 220 position 9 to positions of popping one's head in Relatively high and floating is smaller in 25 section, it was demonstrated that radiation intensity is larger and uniform at above-mentioned position.In addition at other positions 220 corresponding resistance of probe, 221 both ends voltage it is smaller, and mutually difference it is larger, it was demonstrated that at these positions radiation intensity compared with It is weak and unstable.Therefore be effectively irradiation zone 150 in the section of position 9 to position 25 with probe 220, in the irradiated site Irradiation effect on domain 150 is relatively good, can ensure the efficiency of the effect and irradiation of irradiation.In addition, the probe on one group of position It in 220, pops one's head in centered on probe 220 corresponding on position 17, the voltage value for measuring resistance 221 is also group probe Maximum voltage value in 220.The probe 220 is after the two-sided irradiation of electron beam so that the irradiation effect and spoke of irradiation devices 100 It is attained by most preferably according to efficiency.
Beam angle measuring device 200 provided by the utility model and its irradiation system, by measuring beam angle The voltage value of probe 220, is calculated the average bias angle of electron beam in measuring device 200.If the average bias angle of electron beam (the range of possible angle not within the scope of possible angle:45 ° ± 5 °), then it needs to adjust the deflection magnet in irradiation devices 100 130 deflection current behind the magnetic field of the deflection magnet 130 of the electron beam of extraction by adjusting after, makes electron beam in irradiation zone Reach rational angular range in 150.
The beam angle measuring device 200 of the utility model embodiment passes through 220 arrangement modes of scheduled probe, energy The offset angle for the electron beam that irradiation system is drawn enough is measured, the irradiation system can be measured according to the beam angle and be filled The measurement result for setting 200 adjusts the deflection angle of electron beam at any time, so that the offset angle of electron beam remains at rational model In enclosing, ensure the effect and efficiency of radiation.
Above-described embodiments merely represent several embodiments of the utility model, the description thereof is more specific and detailed, But it should not be understood as limiting the scope of the patent of the utility model.It should be pointed out that for the common of this field For technical staff, without departing from the concept of the premise utility, various modifications and improvements can be made, these all belong to In the scope of protection of the utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.

Claims (10)

1. a kind of beam angle measuring device, which is characterized in that including shielding case, multiple probes and it is multiple correspond to it is described The voltage detector of probe, measurement seam is provided on the shielding case, and the probe is located in the shielding case and along with described The center for measuring seam is that the circular arc in the center of circle arranges, and the arc length being spaced between the adjacent probe corresponds to scheduled central angle, often One probe is corresponding for measuring by corresponding resistance eutral grounding, the voltage detector and corresponding resistor coupled in parallel The voltage that the induced current of probe generates at corresponding resistance both ends.
2. beam angle measuring device according to claim 1, which is characterized in that the probe is stitched along with the measurement Center be that the circular arc in the center of circle is evenly distributed and is alternatively arranged.
3. beam angle measuring device according to claim 1, which is characterized in that circular arc institute where multiple probes The angle of corresponding central angle is 90 degree.
4. beam angle measuring device according to claim 1, which is characterized in that the resistance value value range of the resistance For:10kOhm-30kOhm.
5. beam angle measuring device according to claim 1, which is characterized in that the measurement seam is that thin-and-long stitches, Allow electron beam that the measurement is passed through to stitch to enter in the shielding case.
6. beam angle measuring device according to claim 1, which is characterized in that the shielding case includes cover board, more A side plate and bottom plate, the cover board are oppositely arranged with the bottom plate, the side plate be connected to the cover board and the bottom plate it Between.
7. beam angle measuring device according to claim 6, which is characterized in that at least one side plate is L-shaped, The side plate can support the beam angle measuring device when measuring beam angle, and measurement is made to stitch towards scheduled Direction.
8. a kind of irradiation system, which is characterized in that including irradiation devices and such as claim 1-7 any one of them electron beams Angle measurement unit, the irradiation devices can draw electron beam, and the beam angle measuring device is for measuring the spoke According to the offset angle for the electron beam that device is drawn, measurement result tune of the irradiation devices according to the beam angle measuring device The deflection angle of whole electron beam, to obtain the radiation electric beamlet with predetermined bias angle.
9. irradiation system according to claim 8, which is characterized in that the irradiation devices include that scan module, line draw Go out room and deflection magnet, the scan module draws room for drawing electron beam and shape for drawing electron beam, the line At irradiation zone, the outside that room is drawn in the line is arranged in the deflection magnet, can be measured according to the beam angle The measurement result of device adjusts the irradiation angle of the electron beam.
10. irradiation system according to claim 9, which is characterized in that the line draws room and deviates from the scan module Side there is extraction window, the extraction window allows electron beam to be pierced by the line to draw room.
CN201721885515.XU 2017-12-28 2017-12-28 Beam angle measuring device and its irradiation system Active CN207623542U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113409981A (en) * 2021-06-18 2021-09-17 中国科学院近代物理研究所 Multi-surface irradiation method and system for electron beam irradiation processing
CN113470857A (en) * 2021-07-12 2021-10-01 中国原子能科学研究院 Irradiation sterilization system
WO2022166629A1 (en) * 2021-02-02 2022-08-11 湖州超群电子科技有限公司 Electron beam irradiation beam detection system and use method therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022166629A1 (en) * 2021-02-02 2022-08-11 湖州超群电子科技有限公司 Electron beam irradiation beam detection system and use method therefor
CN113409981A (en) * 2021-06-18 2021-09-17 中国科学院近代物理研究所 Multi-surface irradiation method and system for electron beam irradiation processing
CN113470857A (en) * 2021-07-12 2021-10-01 中国原子能科学研究院 Irradiation sterilization system

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