CN207611784U - A kind of edge isolation structure of hetero-junction solar cell - Google Patents
A kind of edge isolation structure of hetero-junction solar cell Download PDFInfo
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- CN207611784U CN207611784U CN201721636175.7U CN201721636175U CN207611784U CN 207611784 U CN207611784 U CN 207611784U CN 201721636175 U CN201721636175 U CN 201721636175U CN 207611784 U CN207611784 U CN 207611784U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a kind of edge isolation structures of hetero-junction solar cell, it includes the pressing inking mechanism for being used to support the supporting and positioning mechanism of positioning silicon chip and carrying out inking to silicon chip, the wherein described supporting and positioning mechanism includes groove, supporting bable tops and positioning device, it includes pressing table top to press inking mechanism, device out of ink, the device out of ink is corresponding with the groove of supporting and positioning mechanism, and pressing inking mechanism, which moves downward, when work touches silicon chip, and the ink in device out of ink contacts silicon chip edge.The utility model etches away the ITO and metal at silicon chip side edge using EDGE CONTACT etching ink, is finally reached the effect of insulation；It can realize automation or semi-automation, simple for process, production efficiency is high；The hard contact with silicon chip is reduced, the bad product rates such as silicon chip fragmentation, chipping are reduced；Can edge corrosion is clean, no transparent conductive film and metal residual, battery plus-negative plate is completely isolated.
Description
Technical field
The utility model is related to crystalline silicon high performance solar batteries field more particularly to a kind of edge of hetero-junction solar cell every
From structure.
Background technology
Currently, high performance solar batteries are a hot spots of numerous photovoltaic enterprises and research institution's concern, HJT batteries are
It is one of two kinds of high-efficiency battery technologies of volume production.HJT batteries with its Efficient Conversion efficiency, low-temperature coefficient, low temperature process and
It is suitble to the advantages such as sheet to obtain the special favor of numerous mechanisms and manufacturing enterprise, research and development enthusiasm is remained high, all obtained substantially
Good Recent Progresses In The Development.
Wherein HJT batteries use N-type silicon chip as substrate, thin by making herbs into wool cleaning, amorphous silicon membrane deposition, electrically conducting transparent
The series of process steps such as film deposition, metal electrode making complete the making of cell piece.Transparent conductive film deposits and metal electrode
Making likely relates to the problem of edge shorting, so must be pocessed to edge to prevent the positive back side of battery from directly leading
It is logical to cause short circuit.Current most common method is to carry out press box to edge with Mask to block, and such edge will not substantially plate
Transparent conductive film or metal back electrode, to ensure that the positive and negative anodes of battery are not turned on short circuit.But the shortcomings that this method just like
Under：(1) Mask press boxes are typically all manual press box, are not easy to automate, production efficiency is relatively low；(2) Mask press boxes easily cause
Silicon chip fragmentation, the defective products such as spring angle generate；(3) Mask press boxes are likely to cause side due to the use of service life and aligning accuracy problem
Plating exists so as to cause the risk for generating edge current leakage.These disadvantages are undoubtedly the increase in the fragment rate of HJT batteries, reduce
The yields of HJT batteries, so as to cause the cost increase of HJT batteries, competitiveness declines.
Invention content
To solve the defect of the prior art, the utility model provides a kind of edge isolation structure of hetero-junction solar cell, institute
It includes the pressing inking mechanism for being used to support the supporting and positioning mechanism of positioning silicon chip and carrying out inking to silicon chip, wherein institute to state structure
It includes groove, supporting bable tops and positioning device to state supporting and positioning mechanism, and pressing inking mechanism includes pressing table top, device out of ink,
The device out of ink is corresponding with the groove of supporting and positioning mechanism, and pressing inking mechanism, which moves downward, when work touches silicon chip,
Ink in device out of ink contacts silicon chip edge.
Further, the positioning device can move along the horizontal or vertical direction.
Further, the device out of ink includes the perforated tube for placing ink and inking sponge, the painting big basin-like inkstone
Silk floss is wrapped on perforated tube, and the ink in perforated tube contacts the edge of silicon chip by ink sponge.
The utility model uses above technical scheme：Supporting and positioning mechanism and pressing inking mechanism are applied to hetero-junctions electricity
The edge isolation technique in pond is etched away the ITO and metal at silicon chip side edge using EDGE CONTACT etching ink, finally reached
To the effect of insulation；It can realize automation or semi-automation, simple for process, production efficiency is high；Enough hardness reduced with silicon chip
Contact reduces the bad product rates such as silicon chip fragmentation, chipping；Can edge corrosion is clean, no transparent conductive film and metal residual, electricity
Pond positive and negative anodes are completely isolated.
Description of the drawings
Fig. 1 is the utility model supporting and positioning mechanism structural schematic diagram；
Fig. 2 is that the utility model presses inking mechanism structure schematic diagram；
Fig. 3 is the schematic cross-sectional view that the utility model presses inking mechanism；
Structural schematic diagram when Fig. 4 is utility model works.
Specific implementation mode
Understand to make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, to this
The solar cell of invention is further described in detail.
As shown in Figure 1, Figure 2, Figure 3, Figure 4, the utility model discloses a kind of edge isolation structure of hetero-junction solar cell, institutes
It includes being used to support the supporting and positioning mechanism 1 and pressing inking mechanism 2 of positioning silicon chip 3 to state structure, wherein the support localization machine
Structure 1 includes groove 11, supporting bable tops 12 and positioning device 13, and pressing inking mechanism 2 includes pressing table top 21, device 22 out of ink,
The device out of ink 22 includes the perforated tube 221 and inking sponge 222 for placing ink, and the inking sponge 222 is wrapped up
On perforated tube 221, inking sponge 222 is corresponding with the groove 11 of supporting and positioning mechanism 1, pressing inking mechanism 2 when work
It moves downward and touches silicon chip 3, the edge of the ink contact silicon chip 3 in inking sponge 222 is etched 3 edge of silicon chip.
It works specifically, following methods may be used in the utility model：
Deposition is had transparent conductive film or transparent conductive film/metal laminated silicon chip to be placed into supporting and positioning mechanism by step 1
On, wherein positioning device can be moved with horizontal or vertical direction；
Positioning device in step 2, supporting and positioning mechanism moves horizontally first, and silicon chip is placed on middle, the side of silicon chip
Edge is fallen in grooved position.Then it is moved downwards in Vertical Square, silicon chip is placed on supporting bable tops；
Step 3, pressing inking device with supporting and positioning device be contraposition coincide, press inking device perforated tube by
Inking sponge wrapping, and etching ink is provided to inking sponge.Inking sponge corresponds to the grooved position of supporting and positioning mechanism；
Step 4, when pressing inking mechanism vertical downward movement and touching silicon chip, the etching ink in inking sponge can connect
The marginal position for contacting silicon chip, is etched silicon chip edge.
Supporting and positioning mechanism and pressing inking mechanism are applied to the edge isolation technique of hetero-junction solar cell by the utility model
, the ITO and metal at silicon chip side edge are etched away using the method for EDGE CONTACT etching ink, are finally reached the effect of insulation
Fruit；It can realize automation or semi-automation, simple for process, production efficiency is high；Enough hard contacts reduced with silicon chip, reduce silicon
The bad product rates such as piece fragmentation, chipping；Can edge corrosion is clean, no transparent conductive film and metal residual, battery plus-negative plate is complete
Full isolation.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical solution and advantageous effect
Describe in detail it is bright, it is all at this it should be understood that example the above is only the implementation of the present invention, is not intended to limit the invention
All any modification, equivalent and improvement etc., should be included in the guarantor of the utility model made by within the spirit and principle of invention
Within the scope of shield.
Claims (3)
1. a kind of edge isolation structure of hetero-junction solar cell, it is characterised in that：The structure includes being used to support positioning silicon chip
Supporting and positioning mechanism and the pressing inking mechanism that inking is carried out to silicon chip, wherein the supporting and positioning mechanism includes groove, support
Table top and positioning device, pressing inking mechanism include pressing table top, device out of ink, the device out of ink and supporting and positioning mechanism
Groove is corresponding, and pressing inking mechanism, which moves downward, when work touches silicon chip, and the ink in device out of ink contacts silicon chip edge.
2. the edge isolation structure of hetero-junction solar cell according to claim 1, it is characterised in that：The positioning device can edge
Horizontal or vertical direction moves.
3. the edge isolation structure of hetero-junction solar cell according to claim 1, it is characterised in that：The device out of ink includes
Perforated tube for placing ink and inking sponge, the inking sponge wrapping is on perforated tube, the oil in perforated tube
Ink contacts the edge of silicon chip by ink sponge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721636175.7U CN207611784U (en) | 2017-11-30 | 2017-11-30 | A kind of edge isolation structure of hetero-junction solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721636175.7U CN207611784U (en) | 2017-11-30 | 2017-11-30 | A kind of edge isolation structure of hetero-junction solar cell |
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| Publication Number | Publication Date |
|---|---|
| CN207611784U true CN207611784U (en) | 2018-07-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201721636175.7U Active CN207611784U (en) | 2017-11-30 | 2017-11-30 | A kind of edge isolation structure of hetero-junction solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111293195A (en) * | 2020-04-15 | 2020-06-16 | 苏州联诺太阳能科技有限公司 | Preparation method of heterojunction battery |
| CN112490156A (en) * | 2020-11-27 | 2021-03-12 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Processing device and processing method of heterojunction solar cell |
-
2017
- 2017-11-30 CN CN201721636175.7U patent/CN207611784U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111293195A (en) * | 2020-04-15 | 2020-06-16 | 苏州联诺太阳能科技有限公司 | Preparation method of heterojunction battery |
| CN112490156A (en) * | 2020-11-27 | 2021-03-12 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Processing device and processing method of heterojunction solar cell |
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| GR01 | Patent grant | ||
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| TR01 | Transfer of patent right |
Effective date of registration: 20211130 Address after: No.17, Quanyuan Road, Jinjiang Economic Development Zone (wuliyuan), Quanzhou City, Fujian Province, 362000 Patentee after: FUJIAN JINSHI ENERGY Co.,Ltd. Address before: 362000 Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian, Quanzhou Patentee before: GS-SOLAR (FU JIAN) Co.,Ltd. |